CN102810465B - One grows SiO in SiC material 2the method of passivation layer - Google Patents

One grows SiO in SiC material 2the method of passivation layer Download PDF

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CN102810465B
CN102810465B CN201110147251.9A CN201110147251A CN102810465B CN 102810465 B CN102810465 B CN 102810465B CN 201110147251 A CN201110147251 A CN 201110147251A CN 102810465 B CN102810465 B CN 102810465B
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passivation layer
sio
sic material
sic
pecvd
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CN102810465A (en
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李博
申华军
白云
汤益丹
刘焕明
周静涛
杨成樾
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The invention discloses one and grow SiO in SiC material 2the method of passivation layer, belongs to the technical field of growth of passivation layer on semi-conducting material.Described method comprises employing PECVD and grow SiO in SiC material 2passivation layer and to SiO 2passivation layer is fine and close.Described method can realize SiO under lower temperature conditions 2the growth of passivation layer in SiC material, SiO 2passivation layer refractive index is after annealing reduced to 1.455, SiO from 1.465 2the compactness extent of passivation layer is high, can meet SiC material to SiO 2the requirement of passivation layer.Further, provided by the inventionly in SiC material, SiO is grown 2the method of passivation layer can be used in the SiO of thickness at more than 100nm 2the growth of passivation layer.

Description

One grows SiO in SiC material 2the method of passivation layer
Technical field
The present invention relates to the technical field of growth of passivation layer on semi-conducting material, particularly one grows SiO in SiC material 2the method of passivation layer.
Background technology
Carborundum (SiC), as semiconductor material with wide forbidden band of new generation, more and more causes the attention of people, and it has the features such as large energy gap, high critical breakdown strength, high electron mobility, high heat conductance, is subject to extensive concern in the world.Current SiC base JBS device is used widely in field of power electronics.
It is the critical process affecting device performance that SiC base JBS device intermediate ion injects, and the passivation layer that SiC material grows can play minimizing implant damage, avoids chip surface by the effect of staiing.
At present, in SiC material, the method for growth of passivation layer comprises thermal oxidation method and plasma enhanced chemical vapor deposition method (PECVD).
The defect that thermal oxidation method exists is:
The first, thermal oxidation can consume the SiC layer on surface.
The second, the passivation layer of generation contains remaining C cannot separate out and stay in passivation layer, the passivation layer defect obtained after thermal oxidation and surface state more, need high annealing to eliminate.
3rd, after ion implantation technology, remove passivation layer easily cause SiC layer surface roughening.
4th, if having doping process before thermal oxidation, SiC layer the spreading again of doping process before 1200 DEG C of long thermal oxidations can cause, doping content changes, thus thermal oxidation can only use before doping process.
5th, thermal oxidation technology requires harsh to oxidizing temperature and oxidization time.If obtain the passivation layer of 60nm, temperature is usually more than 1200 DEG C, and oxidization time reaches 8 ~ 10 hours.The temperature needed is high, and growth time is longer.The very difficult thermal oxidation method of passivation layer of more than thickness 100nm grows.
Although it is low to adopt the method for PECVD growth of passivation layer in SiC material to have growth temperature, the feature that deposition velocity is fast, the defect that this mode exists is: passivation layer poor quality, comparatively loose.
Summary of the invention
In order to solve the problem, the present invention proposes one and first adopting PECVD to grow SiO in SiC material 2passivation layer, then to the SiO grown 2passivation layer densification in SiC material, grow SiO 2the method of passivation layer.
To achieve these goals, provided by the inventionly in SiC material, SiO is grown 2the method of passivation layer comprises:
PECVD is adopted to grow SiO in SiC material 2passivation layer; With,
To described SiO 2passivation layer is fine and close.
As preferably, described employing PECVD grows SiO in SiC material 2passivation layer comprises:
Cleaning SiC material;
SiC material after dry cleaning;
PECVD is adopted to carry out dried SiC material grows SiO 2passivation layer.
As further preferably, when described SiC material is cleaned, first remove the natural oxidizing layer in described SiC material with corrosive liquid, then carry out routine cleaning.
As further preferred, the proportioning of described corrosive liquid is NH 4f: HF=6: 1, etching time is 30sec.
As further preferably, be at N to described SiC material drying 2atmosphere, under 120 DEG C of conditions, oven dry 10min realizes in an oven.
As further preferred, described pecvd process condition is as follows: temperature: 280 DEG C, power: 70w, and gas flow is SiH 4: 400sccm, N 2o:800sccm, N 2: 750sccm, pressure: 900mTorr.
As preferably, to described SiO 2passivation layer densification has SiO to described growth 2the SiC material of passivation layer is taked at the uniform velocity to heat up and at the uniform velocity the method for lowering the temperature is annealed.
As further preferably, there is SiO to described growth 2the SiC material of passivation layer is taked at the uniform velocity to heat up and at the uniform velocity the method for lowering the temperature is carried out annealing and comprised:
Step 1: be warming up to 800 DEG C from normal temperature, elapsed-time standards 40min.
Step 2: after temperature reaches 800 DEG C, maintains 10min.
Step 3: be warming up to 1000 DEG C from 800 DEG C, programming rate 10 DEG C/min, elapsed-time standards 20min.
Step 4: after temperature reaches 1000 DEG C, maintains 30min.
Step 5: be cooled to 800 DEG C from 1000 DEG C, cooling rate 10 DEG C/min, elapsed-time standards 20min.
Step 6: below 800 DEG C of Temperature fall to 400 DEG C.
As further preferred, the atmosphere of described annealing is N 2, described N 2flow be 1L/min.
Provided by the inventionly in SiC material, grow SiO 2the beneficial effect of the method for passivation layer is:
Provided by the inventionly in SiC material, grow SiO 2the method of passivation layer can realize SiO under lower temperature conditions 2the growth of passivation layer in SiC material, SiO 2passivation layer refractive index is after annealing reduced to 1.455, SiO from 1.465 2the compactness extent of passivation layer is high, can meet SiC material to SiO 2the requirement of passivation layer.Further, provided by the inventionly in SiC material, SiO is grown 2the method of passivation layer can be used in the SiO of thickness at more than 100nm 2the growth of passivation layer.
Embodiment
In order to understand the present invention in depth, below in conjunction with specific embodiment, the present invention is described in detail.
The embodiment of the present invention provides a kind of and grow SiO in SiC material 2the method of passivation layer comprises:
Step 10, employing PECVD grow SiO in SiC material 2passivation layer; This step can comprise:
Step 101, cleaning SiC material: be NH by proportioning 4the corrosive liquid corrosion SiC material of F: HF=6: 1, etching time is 30sec, removes the natural oxidizing layer in SiC material, afterwards, by the SiC material of washed with de-ionized water gained.
Step 102: the SiC material after dry cleaning: the baking oven SiC material of having cleaned being put into 120 DEG C, at N 2under atmosphere, dried with 10min.
Step 103: adopt PECVD carrying out dried SiC material grows SiO 2passivation layer: in temperature: 280 DEG C, power: 70w, gas flow is SiH 4: 400sccm, N 2o:800sccm, N 2: 750sccm, under the process conditions of pressure: 900mTorr, uses the PECVD SiO that growth thickness is 100nm in the SiC material through drying 2passivation layer.
Step 20, to SiO 2passivation layer is fine and close; This step can comprise:
SiO is had to growth 2the SiC material of passivation layer is taked at the uniform velocity to heat up and at the uniform velocity the method for lowering the temperature is annealed:
SiO will be grown 2the SiC material of passivation layer is put in annealing furnace, passes into N with the flow of 1L/min in annealing furnace 2, at N 2in atmosphere, take at the uniform velocity to heat up and at the uniform velocity the method for lowering the temperature is annealed, that is:
Step: 201: be warming up to 800 DEG C from normal temperature, elapsed-time standards 40min.
Step 202: after temperature reaches 800 DEG C, maintains 10min.
Step 203: be warming up to 1000 DEG C from 800 DEG C, programming rate 10 DEG C/min, elapsed-time standards 20min.
Step 204: after temperature reaches 1000 DEG C, maintains 30min.
Step 205: be cooled to 800 DEG C from 1000 DEG C, cooling rate 10 DEG C/min, elapsed-time standards 20min.
Step 206: below 800 DEG C of Temperature fall to 400 DEG C.
Step 207: will SiO have been grown 2the SiC material of passivation layer is taken out.
Adopt and above-mentionedly in SiC material, growing SiO 2the method of passivation layer can realize SiO under lower temperature conditions 2the growth of passivation layer in SiC material, SiO 2passivation layer refractive index is after annealing reduced to 1.455, SiO from 1.465 2the compactness extent of passivation layer is high, can meet SiC material to SiO 2the requirement of passivation layer.Further, provided by the inventionly in SiC material, SiO is grown 2the method of passivation layer can be used in the SiO of thickness at more than 100nm 2the growth of passivation layer.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. one kind grows SiO in SiC material 2the method of passivation layer, comprising:
PECVD is adopted to grow SiO in SiC material 2passivation layer; With,
To described SiO 2passivation layer is fine and close;
To described SiO 2passivation layer densification has SiO to described growth 2the SiC material of passivation layer is annealed;
It is characterized in that,
SiO is had to described growth 2the SiC material of passivation layer is carried out annealing and is comprised:
Step 1: be warming up to 800 DEG C from normal temperature, elapsed-time standards 40min;
Step 2: after temperature reaches 800 DEG C, maintains 10min;
Step 3: be warming up to 1000 DEG C from 800 DEG C, programming rate 10 DEG C/min, elapsed-time standards 20min;
Step 4: after temperature reaches 1000 DEG C, maintains 30min;
Step 5: be cooled to 800 DEG C from 1000 DEG C, cooling rate 10 DEG C/min, elapsed-time standards 20min;
Step 6: below 800 DEG C of Temperature fall to 400 DEG C.
2. method according to claim 1, is characterized in that: described employing PECVD grows SiO in SiC material 2passivation layer comprises:
Cleaning SiC material;
SiC material after dry cleaning;
PECVD is adopted to carry out dried SiC material grows SiO 2passivation layer.
3. method according to claim 2, is characterized in that:
When described SiC material is cleaned, first remove the natural oxidizing layer in described SiC material with corrosive liquid, then carry out routine cleaning.
4. method according to claim 2, is characterized in that:
At N to described SiC material drying 2atmosphere, under 120 DEG C of conditions, oven dry 10min realizes in an oven.
5. method according to claim 2, is characterized in that:
Described pecvd process condition is as follows: temperature: 280 DEG C, power: 70w, and gas flow is SiH 4: 400sccm, N 2o:800sccm, N 2: 750sccm, pressure: 900mTorr.
6. method according to claim 1, is characterized in that:
The atmosphere of described annealing is N 2, described N 2flow be 1L/min.
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CN102969229A (en) * 2012-12-12 2013-03-13 天津中环领先材料技术有限公司 High-density silica back sealing process for heavily-doped-phosphorous monocrystalline silicon wafer
CN104483720B (en) * 2014-12-02 2016-08-10 中国航天科工集团第三研究院第八三五八研究所 A kind of method reducing ceramic oxide optical film refractive index
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CN109979829A (en) * 2017-12-27 2019-07-05 无锡华润微电子有限公司 Silicon carbide activates method for annealing
CN112864006B (en) * 2021-01-11 2022-11-08 中国科学院上海微***与信息技术研究所 Preparation method of semiconductor substrate
CN115588612B (en) * 2022-11-29 2023-04-14 浙江大学杭州国际科创中心 Preparation method of silicon carbide gate oxide layer and corresponding device

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