CN102806609A - Efficient and low-cost hollow-out method for sapphire wafer bar - Google Patents
Efficient and low-cost hollow-out method for sapphire wafer bar Download PDFInfo
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- CN102806609A CN102806609A CN2012102891158A CN201210289115A CN102806609A CN 102806609 A CN102806609 A CN 102806609A CN 2012102891158 A CN2012102891158 A CN 2012102891158A CN 201210289115 A CN201210289115 A CN 201210289115A CN 102806609 A CN102806609 A CN 102806609A
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- cutter
- rod
- sapphire wafer
- bar
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Abstract
The invention discloses an efficient and low-cost hollow-out method for a sapphire wafer bar. Problems that an existing method for hollowing out a bar is poor in chip removal effect and large quantities of cooling liquid cannot reach a bar hollowed-out portion are solved. The efficient and low-cost hollow-out method mainly includes steps of (1), fixing a sapphire crystal on a machine tool, and turning on a cooling water pipe to continuously feed cooling liquid into the sapphire crystal; and (2), moving a cutter to a position to be processed and forming the sapphire wafer bar by more than one processing cycle. Each processing cycle includes hollowing out the bar, lifting the cutter, removing chips and moving the cutter downwards. In the step of hollowing out the bar, the rotational speed of the cutter ranges from 300r/min to 500r/min, and the bar begins to be hollowed out; in the step of lifting the cutter, the cutter is quickly lifted up when the depth of a hollowed-out portion of the bar ranges from 2mm to 5mm; in the step of removing the chips, the rotational speed of the cutter is controlled to range from 500r/min to 1000r/min, and the rotational speed of the cutter is adjusted to range from 300r/mm to 500r/min after 3-6 seconds; and in the step of moving the cutter downwards, the cutter moves downwards to the position to be processed. The efficient and low-cost hollow-out method has the advantages of high efficiency, good chip removal effect and cooling effect, and the like.
Description
Technical field
What the present invention relates to is that a kind of wafer rod is drawn excellent method, is meant that specifically a kind of sapphire wafer rod of high efficiency, low cost is drawn excellent method.
Background technology
Sapphire crystal hardness is high, the processing drag is big, draws rod and adds a large amount of heats that man-hour, the tool grinding crystal produced and can produce harm to cutter, and the abrasive dust of generation sticks to the grinding performance that also can have a strong impact on cutter on the cutter.
Be cooling cutter and eliminating abrasive dust, existing have two kinds to draw excellent processing mode usually: draw center water flowing of excellent cutter and not water flowing of center.
Adopt material feeding knife center water flowing mode can solve the cooling problem preferably, but have following shortcoming: 1, needs adopt expensive numerical control machining center equipment, and 2, cutter clamping device complicacy.
Adopt the operating personnel of material feeding knife not water flowing of center mode to draw rod with radial drilling machine usually; This method is by the feed of operator's Artificial Control; In drawing rod motion, can deposit following problem: 1, cooling fluid can not arrive in a large number and draw excellent position, and 2, the chip removal weak effect, 3, working (machining) efficiency is low.
Summary of the invention
The objective of the invention is to address the above problem, provide a kind of cutter that can cool off effectively to get rid of the sapphire wafer rod of a kind of high efficiency, low cost of abrasive dust again and draw excellent method.
Realize that technical scheme of the present invention is following:
A kind of sapphire wafer rod of high efficiency, low cost is drawn excellent method, mainly is made up of following steps:
(1) sapphire crystal is fixed on the lathe, opens cooling water pipe and continue to introduce cooling fluid;
(2) cutter is moved to position to be processed, form the sapphire wafer rod through the fabrication cycles more than 1, cutter is accomplished and is drawn rod, lifts, chip removal, moves down four steps, wherein in each fabrication cycles
Draw rod: with the cutter rotational speed regulation is 300～500r ∕ min, begins to draw rod;
Lift: the degree of depth of drawing rod lifts cutter when reaching 2～5mm fast, cooling fluid is pressed into the grinding position of sapphire crystal;
Chip removal: adjustment cutter rotating speed, make its rotating speed be controlled at 500～1000r ∕ min, behind 3～6s, be 300～500r ∕ min with the cutter rotational speed regulation;
Move down: cutter is displaced downwardly to position to be processed.
Further, the number of times of fabrication cycles is 20～30 times in the said step (2).
In order to reach better chip removal effect, said cooling fluid concentration is 1.5%～4.1%.
In addition, in the said step (2) cutter to lift height highly identical with moving down of cutter.
As a kind of preferred, said lathe is the numerical control drilling-milling bed.
For the excellent production of sapphire wafer that realizes multiple diameter, said tool diameter is 2～6 inches.
The present invention has the following advantages and beneficial effect:
1, the present invention adopts the mode of circulation grinding constantly to be pressed into and to discharge the cooling fluid at grinding position; Thereby cool off the cutter of processing effectively; Simultaneously through this cooling fluid be pressed into and discharge effectively the abrasive dust at grinding position is taken out of, reach the cutter cooling simultaneously and discharge the purpose of abrasive dust.
2, through the circulate method of grinding of the present invention, can draw out the wafer rod of length greater than 250mm, realize that effectively longer wafer produces excellently, bigger meets the need of market; Simultaneously, through method of the present invention, can improve the efficient of production effectively, its production efficiency can improve more than 50%.
3, method of the present invention is applicable to not water flowing of material feeding knife center mode, and with the apparatus in comparison of material feeding knife center water flowing mode, the equipment that the present invention uses has been simplified mechanical structures widely; Thereby improved the reliability of cutter; Simultaneously, also greatly reduced input cost, drawn according to statistics; The equipment that the present invention adopts and the apparatus in comparison of center water flowing mode, its cost reduces more than 60%.
4, cooling fluid concentration of the present invention is formulated as 1.5%～4.1%, and this concentration not only can reach chip removal effect preferably, and it is minimum that cooling fluid is dropped to the effect of equipment corrosion, realizes chip removal and anticorrosion optimum balance.
5, the present invention adopts numerical control drilling-milling bed realization sapphire wafer rod to draw excellent method, thereby can realize programming Control to step (2), greatly reduce artificial input cost; Simultaneously, because method of the present invention by programming Control, greatly reduces artificial error, increase the accuracy of the inventive method, thereby improve the quality of finished product effectively.
6, the present invention adopts the cutter of different caliber size, thus the sapphire wafer that realizes different-diameter produce excellently, the sapphire wafer rod of production can satisfy more multi-user's demand.
Description of drawings
Fig. 1 is the fixed structure sketch map of sapphire crystal.
Fig. 2 is that cutter is displaced downwardly to the sapphire crystal structural representation in when top.
Fig. 3 be when lifting in the step (2) cooling fluid flow to sketch map.
Fig. 4 be in the step (2) during chip removal cooling fluid flow to sketch map.
The specific embodiment
Below in conjunction with embodiment and accompanying drawing thereof the present invention is done to specify further, but embodiment of the present invention is not limited thereto.
The sapphire wafer rod of a kind of high efficiency, low cost of the present invention is drawn excellent method, mainly is made up of following steps:
(1) sapphire crystal is fixed on the lathe, opens cooling water pipe and continue to introduce cooling fluid.
Machine selection is the numerical control drilling-milling bed among the present invention, can realize following steps ground programming Control through the numerical control drilling-milling bed, thereby realize full-automation, can effectively reduce cost through this selection.
The detailed process of this step is following: as shown in Figure 1, sapphire crystal 1 is fixed in through tommyhead bolt 2 on the glass block 3 of lathe, and this glass block 3 is to be fixed on the platen 4, thereby effectively sapphire crystal 1 is fixed on the lathe.Open cooling water pipe 5, make but water pipe 5 outflow cooling fluids, thereby cooling fluid is flow on the sapphire crystal 1 constantly.
The cooling fluid that adopts in this step is that a kind of oiliness is washed mill liquid, and the cooling fluid that the present invention adopts is that Yunnan Optoelectronic Auxiliary Material Co., Ltd. produces, and its model is MB-03.Cooling fluid of the present invention and water mixed configuration concentration are 1.5%～4.1%; Under this concentration conditions; The abrasive dust with the grinding position of maximizing is discharged; Simultaneously in order to reach chip removal and etch-proof optimum balance, avoid this cooling fluid that equipment ground is corroded when promptly arriving best chip removal effect as far as possible, the concentration of this cooling fluid is 3.5% in the present embodiment.
(2) cutter is moved to position to be processed, form the sapphire wafer rod through the fabrication cycles more than 1, cutter is accomplished and is drawn rod, lifts, chip removal, moves down four steps in each fabrication cycles.
At first cutter 6 is displaced downwardly to the top of sapphire crystal 1, as shown in Figure 2.When being displaced downwardly to the sapphire crystal top, begin to carry out fabrication cycles, concrete this step of each fabrication cycles is following:
Draw rod: with the rotational speed regulation of cutter is 400r ∕ min, begins to draw rod.
Lift: when the degree of depth of drawing rod reaches 5mm, lift cutter fast.This step is through lifting cutter fast, and then the difference through grinding position and liquid pressure, effectively cooling fluid is pressed into the grinding position of sapphire crystal, and flowing to of cooling fluid is as shown in Figure 3.Simultaneously, mix with abrasive dust through cooling fluid, the abrasive dust that will be attached on the cutter effectively comes off, realize better cutter draw the rod effect.
Chip removal: be pressed into the grinding position of sapphire crystal when cooling fluid after, adjustment cutter rotating speed makes its rotating speed be controlled at 800r ∕ min.The upper part cooling fluid that can effectively drive the grinding position through this rotating speed is rotated at a high speed, thereby through this cooling fluid of rotating at a high speed the most abrasive dust in bottom is discharged, and cooling fluid flows to as shown in Figure 4.Be controlled at when the cutter rotating speed under the condition of 800r ∕ min behind the 5s, regulate the cutter rotating speed again to 400r ∕ min.
Move down: cutter is displaced downwardly to position to be processed.In a fabrication cycles process, the height that cutter lifts is identical with the height that moves down; Thereby guarantee that this fabrication cycles finishes to be on the same position with the point of a knife of next fabrication cycles starting point.
When having carried out 10 fabrication cycles in the present embodiment, the degree of depth of drawing rod can reach 50mm.Promptly when the thickness of sapphire crystal is 200mm, only need to accomplish the production that 40 fabrication cycles can realize the sapphire wafer rod.Simultaneously, because of present embodiment adopts the numerical control drilling-milling bed, the height that only needs setting cutter integral body to move down stops the work of lathe when reaching 200mm.Can accomplish the process of sapphire wafer rod through above-mentioned steps.
Present embodiment is with the difference of embodiment 1: the rotating speed that cutter adopts in each step is different.Draw in the excellent step: the cutter rotational speed regulation is 300r ∕ min; In the chip removal step: the cutter rotating speed is controlled at 500r ∕ min, behind the 6s, is 300r ∕ min with the cutter rotational speed regulation.
Lifting in the step of present embodiment: the degree of depth of drawing rod is 2mm; The concentration of cooling fluid is 1.5%.
Present embodiment is with the difference of embodiment 1: the rotating speed that cutter adopts in each step is different.Draw in the excellent step: the cutter rotational speed regulation is 500r ∕ min; In the chip removal step: the cutter rotating speed is controlled at 1000r ∕ min, behind the 3s, is 500r ∕ min with the cutter rotational speed regulation.
Lifting in the step of present embodiment: the degree of depth of drawing rod is 4mm; The concentration of cooling fluid is 4.1%.
All can realize the rod of drawing of sapphire crystal through the foregoing description, and the length of the sapphire wafer of drawing out rod all can be greater than 250mm.Simultaneously, because tool diameter scope of the present invention is 2～6 inches, thereby can realize the production of the sapphire wafer rod of different-diameter through changing the cutter of different caliber size.
Find that through detecting the production time of average every sapphire wafer rod of the present invention is less than the production time of the average every sapphire wafer rod of existing method greatly; Production efficiency of the present invention is compared with the production efficiency of existing method and has been improved more than 50%.
Just can realize the present invention preferably according to the foregoing description.
Claims (6)
1. the sapphire wafer rod of a high efficiency, low cost is drawn excellent method, it is characterized in that, mainly is made up of following steps:
(1) sapphire crystal is fixed on the lathe, opens cooling water pipe and continue to introduce cooling fluid;
(2) cutter is moved to position to be processed, form the sapphire wafer rod through the fabrication cycles more than 1, cutter is accomplished and is drawn rod, lifts, chip removal, moves down four steps, wherein in each fabrication cycles
Draw rod: with the cutter rotational speed regulation is 300～500r ∕ min, begins to draw rod;
Lift: the degree of depth of drawing rod lifts cutter when reaching 2～5mm fast, cooling fluid is pressed into the grinding position of sapphire crystal;
Chip removal: adjustment cutter rotating speed, make its rotating speed be controlled at 500～1000r ∕ min, behind 3～6s, be 300～500r ∕ min with the cutter rotational speed regulation;
Move down: cutter is displaced downwardly to position to be processed.
2. the sapphire wafer rod of a kind of high efficiency, low cost according to claim 1 is drawn excellent method, it is characterized in that: the number of times of fabrication cycles is 20～30 times in the said step (2).
3. the sapphire wafer rod of a kind of high efficiency, low cost according to claim 2 is drawn excellent method, it is characterized in that: said cooling fluid concentration is 1.5%～4.1%.
4. the sapphire wafer rod of a kind of high efficiency, low cost according to claim 3 is drawn excellent method, it is characterized in that: lifting of the middle cutter of said step (2) is highly highly identical with moving down of cutter.
5. draw excellent method according to the sapphire wafer rod of each described a kind of high efficiency, low cost of claim 1～4, it is characterized in that: said lathe is the numerical control drilling-milling bed.
6. the sapphire wafer rod of a kind of high efficiency, low cost according to claim 5 is drawn excellent method, it is characterized in that: said tool diameter is 2～6 inches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102891158A CN102806609A (en) | 2012-08-15 | 2012-08-15 | Efficient and low-cost hollow-out method for sapphire wafer bar |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012102891158A CN102806609A (en) | 2012-08-15 | 2012-08-15 | Efficient and low-cost hollow-out method for sapphire wafer bar |
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| CN102806609A true CN102806609A (en) | 2012-12-05 |
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| CN2012102891158A Pending CN102806609A (en) | 2012-08-15 | 2012-08-15 | Efficient and low-cost hollow-out method for sapphire wafer bar |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103029226A (en) * | 2012-12-06 | 2013-04-10 | 江苏吉星新材料有限公司 | Forming method of sapphire pipe |
| CN104441278A (en) * | 2014-11-07 | 2015-03-25 | 苏州恒嘉晶体材料有限公司 | Sapphire crystal bar digging method and cutter |
| WO2018076902A1 (en) * | 2016-10-31 | 2018-05-03 | 福建晶安光电有限公司 | Crystal bar production method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200970857Y (en) * | 2006-10-27 | 2007-11-07 | 北京有色金属研究总院 | Tool for drilling silicon single-crystal rod from irregular silicon briquette |
| CN201835749U (en) * | 2010-01-20 | 2011-05-18 | 师文静 | Hydraulic power rotating stuck-freeing drill bit |
| CN102225592A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield |
| CN102225591A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield by utilizing 8-shaped cutting |
| JP2012116036A (en) * | 2010-11-30 | 2012-06-21 | Consec Corp | Method and apparatus for hollowing out columnar block |
| CN102514108A (en) * | 2011-12-28 | 2012-06-27 | 元亮科技有限公司 | Flexible feeding mechanism for sapphire coring machine |
-
2012
- 2012-08-15 CN CN2012102891158A patent/CN102806609A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200970857Y (en) * | 2006-10-27 | 2007-11-07 | 北京有色金属研究总院 | Tool for drilling silicon single-crystal rod from irregular silicon briquette |
| CN201835749U (en) * | 2010-01-20 | 2011-05-18 | 师文静 | Hydraulic power rotating stuck-freeing drill bit |
| JP2012116036A (en) * | 2010-11-30 | 2012-06-21 | Consec Corp | Method and apparatus for hollowing out columnar block |
| CN102225592A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield |
| CN102225591A (en) * | 2011-04-27 | 2011-10-26 | 无锡斯达新能源科技有限公司 | Method for improving sapphire crystal ingot bar taking yield by utilizing 8-shaped cutting |
| CN102514108A (en) * | 2011-12-28 | 2012-06-27 | 元亮科技有限公司 | Flexible feeding mechanism for sapphire coring machine |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103029226A (en) * | 2012-12-06 | 2013-04-10 | 江苏吉星新材料有限公司 | Forming method of sapphire pipe |
| CN103029226B (en) * | 2012-12-06 | 2015-05-13 | 江苏吉星新材料有限公司 | Forming method of sapphire pipe |
| CN104441278A (en) * | 2014-11-07 | 2015-03-25 | 苏州恒嘉晶体材料有限公司 | Sapphire crystal bar digging method and cutter |
| WO2018076902A1 (en) * | 2016-10-31 | 2018-05-03 | 福建晶安光电有限公司 | Crystal bar production method |
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