CN102800550B - Ion implantation apparatus - Google Patents

Ion implantation apparatus Download PDF

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Publication number
CN102800550B
CN102800550B CN201210067360.4A CN201210067360A CN102800550B CN 102800550 B CN102800550 B CN 102800550B CN 201210067360 A CN201210067360 A CN 201210067360A CN 102800550 B CN102800550 B CN 102800550B
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ion beam
mass separation
separation magnet
magnetic pole
travel
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CN102800550A (en
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内藤胜男
土肥正二郎
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NINSSIN ION EQUIPMENT CO Ltd
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NINSSIN ION EQUIPMENT CO Ltd
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Priority claimed from JP2011132724A external-priority patent/JP5585788B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Tubes For Measurement (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides ion implantation apparatus, it comprises mass separation magnet, even if in the maximization with substrate size, when the size of the length direction of ribbon ion beam increases, compared with technology in the past, the power consumption of this mass separation magnet is little, Distribution of Magnetic Field between magnetic pole evenly and size is little.Ion implantation apparatus comprises: ion source, generates ribbon ion beam; Mass separation magnet, has a pair magnetic pole, and this pair magnetic pole is oppositely arranged across the primary flat of ion beam, by the magnetic field produced between magnetic pole, makes the direct of travel of ion beam at the length direction upper deflecting of ion beam; Analyze slit, the ion beam comprising desired ionic species is passed through; Process chamber, is configured with substrate, by analyzing the ion beam irradiation after slit on this substrate.The direction in the magnetic field produced between magnetic pole traverses through the primary flat of the ion beam of mass separation magnet inside obliquely.

Description

Ion implantation apparatus
Technical field
The present invention relates to and mass separation is carried out to ribbon ion beam and substrate is carried out to the ion implantation apparatus of ion implantation process.
Background technology
In the past, use and mass separation has been carried out to ribbon ion beam and substrate is carried out to the ion implantation apparatus of ion implantation process.An example of described ion implantation apparatus is disclosed in patent documentation 1.
The mass separation magnet used in the ion implantation apparatus of patent documentation 1 comprises a pair magnetic pole, this a pair magnetic pole is oppositely disposed in the mode clamping ribbon ion beam on the length direction of banded (or being called sheet) ion beam, described ribbon ion beam is long in one direction, and has thickness on the direction vertical with length direction.Each magnetic pole is wound with coil, by by electric current supply to this coil, between magnetic pole, produce magnetic field.Utilize this magnetic field, make ribbon ion beam bending on direct of travel in the mode in a thickness direction with curvature, and ribbon ion beam is restrained in a thickness direction at separation slot (also referred to as " analysis the slit ") place in the downstream being positioned at mass separation magnet, thus carries out mass separation.
Patent documentation 1: No. 2008-243765, Japanese Laid-Open Patent Publication (0021st ~ 0022 section, Fig. 2)
These several years, the size of the length direction of ribbon ion beam was elongated corresponding to the maximization of substrate size.When the large substrate that glass substrate is such, use the ion beam that length direction is of a size of 600mm ~ 900mm degree, thickness direction is of a size of 30mm ~ 100mm degree.In addition, even if substrate is the less semiconductor substrate as silicon chip, the diameter dimension of the large substrate of the standard of being used as also is reached 450mm, therefore can expect needing to use the ion beam that length direction is of a size of 500mm degree, thickness direction is of a size of 20mm ~ 50mm degree.
Be set to larger than the size of the length direction of ribbon ion beam being documented in the distance between a pair magnetic pole arranged in the mass separation magnet in patent documentation 1.When carrying out ion implantation to large substrate, the size of the length direction of the ion beam used is very large, therefore must expand the distance between magnetic pole to larger than ever degree.
Usually, the magnetic field in mass separation magnet is designed to become uniform Distribution of Magnetic Field along the whole region of the ion beam carrying out mass separation with desired intensity.Substantially equal along the whole region of ion beam in order to make by the amount of deflection of the ion beam of mass separation, thus carry out mass separation with good precision, described uniform Distribution of Magnetic Field must be become.
But the distance between magnetic pole expands, on the length direction of ribbon ion beam, Distribution of Magnetic Field produces uneven.Distance between magnetic pole is wider, and the magnetic line of force produced between the magnetic pole be oppositely arranged is more bending at the edge part of magnetic pole.Its result, the magnetic flux density of the central portion between the magnetic pole be oppositely arranged relatively becomes thin, and the magnetic flux density near magnetic pole relatively becomes close.Be subject to this impact, also produce difference by the amount of deflection of the ribbon ion beam between magnetic pole.Specifically, be less than the amount of deflection of the ribbon ion beam near by magnetic pole by the amount of deflection of the ribbon ion beam of the central portion between magnetic pole, the shape of ion beam produces distortion in the longitudinal direction.Because a pair magnetic pole of the mass separation magnet forming patent documentation 1 is oppositely arranged on the length direction of ribbon ion beam, therefore the amount of deflection of the length direction of described ribbon ion beam presents larger difference, is difficult to carry out the good mass separation of precision.
On the other hand, for the mass separation magnet recorded in patent documentation 1, in order to improve the uneven magnetic flux distribution produced between magnetic pole, can consider make the pole dimension on the thickness direction of ribbon ion beam enough large and make ribbon ion beam form mass separation magnet by the mode near the central portion of magnetic pole, but, in this case, the size of mass separation magnet can become very large.
In addition, expand with the distance between magnetic pole, the weakened in the magnetic field produced between this magnetic pole.Due to the weakened in magnetic field, and the amount of deflection required when ion beam quality being separated does not change on the other hand, so must increase the magnitude of current flowing through the coil be wound on each magnetic pole of mass separation magnet, magnetic field intensity is strengthened.In this case, with the increase of the magnitude of current, cause the power consumption quantitative change of mass separation magnet large.
Summary of the invention
The object of the present invention is to provide a kind of ion implantation apparatus, this ion implantation apparatus comprises mass separation magnet, even if in the maximization with substrate size, when the size of the length direction of ribbon ion beam increases, compared with technology in the past, the size of even, the described mass separation magnet of the Distribution of Magnetic Field between the magnetic pole of described mass separation magnet is little and power consumption that is described mass separation magnet is also little.
That is, the invention provides a kind of ion implantation apparatus, it is characterized in that comprising: ion source, generate ribbon ion beam long in one direction; Mass separation magnet, be configured in described ionogenic downstream, there is a pair magnetic pole, this a pair magnetic pole is oppositely arranged across the primary flat of described ion beam, the primary flat of described ion beam is positioned at the plane defined by the length direction of described ion beam and direct of travel, by the magnetic field produced between described magnetic pole, make the direct of travel of described ion beam at the length direction upper deflecting of described ion beam; Analyze slit, in the ion beam after by described mass separation magnet, to comprise desired ionic species ion beam is passed through; And process chamber, be configured with substrate, by the ion beam irradiation after described analysis slit on described substrate, wherein, the direction in the magnetic field produced between described magnetic pole traverses through the primary flat of the described ion beam of described mass separation magnet inside obliquely.
Due to by making the direct of travel of ribbon ion beam carry out mass separation at the length direction upper deflecting of ion beam, so can across the magnetic pole of the primary flat of ion beam relatively configuration quality discrete magnets.Therefore, with configure the structure in the past of magnetic pole in the mode clamping ribbon ion beam in the longitudinal direction compared with, the distance that the distance between magnetic pole becomes very little can be made.Its result, can improve the uniformity of the Distribution of Magnetic Field produced between magnetic pole.In addition, due to having good uniformity of Distribution of Magnetic Field, so pole dimension can be increased in order to alleviate the uneven of Distribution of Magnetic Field.Therefore, with formed the situation of uniform Distribution of Magnetic Field by structure in the past compared with, the size of mass separation magnet can be made to diminish.In addition, because the distance between magnetic pole is little, so the intensity in the magnetic field produced between magnetic pole is enough strong.Therefore, need not compensate in order to the situation causing magnetic field intensity to die down to the expansion with the distance between magnetic pole, and as mass separation magnet in the past, increase the magnitude of current flowing through the coil be wound on magnetic pole, so the power consumption of mass separation magnet can be reduced accordingly.
In addition, in the past when by making the direct of travel of ribbon ion beam deflect in the longitudinal direction to carry out mass separation, in the longitudinal direction the ribbon ion beam comprising desired ionic species was separated with the ribbon ion beam of the ionic species comprised beyond desired ionic species.In this case, the size of mass separation magnet must be increased, or strengthen the magnetic field that produces in the inside of this magnet, the ribbon ion beam that must make to comprise desired ionic species is very large with the difference of the amount of deflection of the ribbon ion beam comprising the ionic species beyond desired ionic species.On the other hand, in ion implantation apparatus of the present invention, the direction in the magnetic field produced between magnetic pole traverses through the primary flat of the ion beam of the inside of mass separation magnet obliquely, so can carry out comprising being separated of the ribbon ion beam of desired ionic species and the ionic species comprised beyond desired ionic species on the thickness direction of the ribbon ion beam vertical with primary flat.Therefore, mass separation magnet need not be made as previously mentioned to maximize or strengthen magnetic field intensity.
As the structure of mass separation magnet more specifically, the size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam.
In addition, it is characterized in that, the distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet.
In addition, as the ion beam injected in mass separation magnet, preferably, the direct of travel of the described ion beam generated by described ion source tilts to intersect with the direction in the magnetic field produced in described mass separation magnet.
In addition, as the structure of the beam path between ion source and mass separation magnet, preferably, the direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and the beam path between described ion source and described mass separation magnet is configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
On the other hand, it is also conceivable to following structure.Namely, preferably, the direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and in described mass separation magnet, be configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
In addition, preferably, the beam path between described ion source and described mass separation magnet is configured with deflection electromagnet, this deflection electromagnetism makes the direct of travel of described ion beam at the length direction upper deflecting of described ion beam.
In order to be penetrated the ion beam of general parallel orientation in the longitudinal direction by mass separation magnet, preferably, the end being configured in the described magnetic pole of the outlet side of described mass separation magnet be positioned at connect following point line on, described point is located in the inside of described mass separation magnet by the track of multiple ion beams of diverse location on the length direction of described ion beam, from each tangent line of the track of described multiple ion beam of described extraction for being parallel to each other.
In addition, in order to before passing through mass separation magnet and by after mass separation magnet, the length direction of ion beam make the characteristic of ion beam keep substantially identical, preferably, in the inside of described mass separation magnet, identical by the length of the track of the described ion beam of diverse location on the length direction of described ion beam.
About the configuration analyzing slit, preferably, the position that the size that described analysis slit is configured in the thickness direction of described ion beam is minimum.If carry out such configuration, then can be separated with the ion beam of the ionic species comprised beyond desired ionic species the ion beam comprising desired ionic species with good precision.
Even if in the maximization with substrate size, when the size of the length direction of ribbon ion beam increases, compared with technology in the past, the power consumption of the mass separation magnet that the little and ion implantation apparatus of the present invention of the size of the mass separation magnet that even, the of the present invention ion implantation apparatus of the Distribution of Magnetic Field between the magnetic pole of the mass separation magnet that ion implantation apparatus of the present invention uses uses uses is little.
Accompanying drawing explanation
Fig. 1 represents the stereogram of the ribbon ion beam used in the present invention, and (A) of Fig. 1 represents the ribbon ion beam of length direction general parallel orientation, and (B) of Fig. 1 represents the ribbon ion beam that length direction is dispersed.
Fig. 2 is the vertical view of the structure representing an ion implantation apparatus of the present invention, and (A) of Fig. 2 represents that the vertical view of YZ plane, (B) of Fig. 2 represent the vertical view of XZ plane.
Fig. 3 represent record in Fig. 2 along C1-C1 line, along C2-C2 line, appearance along the cross section of the mass separation magnet of C3-C3 line, (A) of Fig. 3 represents the cutaway view along C1-C1 line, (B) of Fig. 3 represents that the cutaway view along C2-C2 line, (C) of Fig. 3 represent the cutaway view along C3-C3 line.
Fig. 4 is the key diagram of mass separation method of the present invention, (A) of Fig. 4 represents the appearance when composition that the ion beam by mass separation magnet inside is divided into magnetic direction and the composition with the direction of vertical magnetic field, (B) of Fig. 4 represents by the track comprising the ion beam of desired ionic species of mass separation magnet inside and the track of ion beam comprising the ionic species beyond desired ionic species, (C) of Fig. 4 represents the position of each ion beam on magnetic direction, position on beam path, (D) of Fig. 4 represents the appearance each ion beam of the ionic species comprising different quality being separated by analyzing slit.
Fig. 5 be the length of the track of ion beam by mass separation magnet inside different on the length direction of ion beam the key diagram of mass separation method, (A) of Fig. 5 represents that (B) of Fig. 5 represents the appearance each ion beam of the ionic species comprising different quality being separated by analyzing slit by the track comprising the ion beam of desired ionic species of mass separation magnet inside and the track of ion beam comprising the ionic species beyond desired ionic species.
Fig. 6 is the key diagram of the structure of the pole end piece of the outlet side being arranged at mass separation magnet, the key diagram of the constructive method that (A) of Fig. 6 is pole end piece, (B) of Fig. 6 represents the mass separation magnet that (A) based on Fig. 6 is formed, and (C) of Fig. 6 represents appearance when making contrary with injection direction by the incident direction of the ion beam in the mass separation magnet of (B) of Fig. 6.
Fig. 7 is the key diagram of the structure of the pole end piece of the outlet side being arranged at mass separation magnet, the key diagram of the constructive method that (A) of Fig. 7 is pole end piece, (B) of Fig. 7 represents the mass separation magnet that (A) based on Fig. 7 is formed, (C) of Fig. 7 represents appearance when making the incident direction of the ion beam of the mass separation magnet of (B) by Fig. 7 contrary with injection direction, (D) of Fig. 7 represents in the example of (B) of Fig. 7, by the appearance of mass separation magnet when a P2 rotational angle θ 1 configures.
Fig. 8 is (A) of Fig. 2, the variation of the ion implantation apparatus recorded in (B) of Fig. 2, it is the example of the ion implantation apparatus of the electrostatic deflection electrodes with the thickness direction upper deflecting making the direct of travel of ion beam at ion beam, (A) of Fig. 8 is the example beam path between ion source and mass separation magnet being provided with the ion implantation apparatus of a pair electrostatic deflection electrodes, (B) of Fig. 8 is the example of the ion implantation apparatus being provided with a pair electrostatic deflection electrodes in mass separation magnet, (C) of Fig. 8 is on the basis of the structure of (A) at Fig. 8, the example of the ion implantation apparatus of a pair electrostatic deflection electrodes is also provided with in the downstream analyzing slit.
Fig. 9 is the variation of (A) of Fig. 2, (B) middle ion implantation apparatus recorded of Fig. 2, it is the example of the ion implantation apparatus of the electromagnet that not only there is mass separation magnet but also there is the length direction upper deflecting making the direct of travel of ion beam at ion beam, (A) of Fig. 9 represents that the vertical view of YZ plane, (B) of Fig. 9 represent the vertical view of XZ plane.
Figure 10 is the key diagram of the allocation position of the analysis slit of ion implantation apparatus of the present invention, (A) of Figure 10 represents that ion beam converges in the appearance of focus in a thickness direction, and (B) of Figure 10 represents appearance during (A) from another viewed in plan Figure 10.
Description of reference numerals
1 ... ion beam
2 ... ion source
3 ... mass separation magnet
4 ... analyze slit
5 ... process chamber
6 ... substrate
7 ... yoke
8 ... coil
9 ... magnetic pole
IM ... ion implantation apparatus
Embodiment
(A) of Fig. 1, Fig. 1 (B) in the example of the ion beam 1 used in the present invention has been shown.These ion beams 1 represent the appearance during ion beam 1 having cut and flown on the beam path between the ion source 1 and mass separation magnet 3 of (A) of Fig. 2 described later, (B) middle record of Fig. 2.Ion beam 1 is generated by ion source 2 described later, advances, and inject mass separation magnet 3 described later along illustrated Z-direction (in the present invention also referred to as the direct of travel of Z-direction or ion beam 1).
When cutting off by the plane vertical with the direct of travel of the ion beam 1 recorded in (A) of Fig. 1 the ion beam 1 recorded in (A) of Fig. 1, the ion beam 1 recorded in (A) of Fig. 1 has the length of width W X along X-direction (in the present invention also referred to as the length direction of X-direction or ion beam 1), has the thickness of the width W Y enough narrower than width W X along Y direction (in the present invention also referred to as the thickness direction of Y-direction or ion beam 1).The ion beam 1 with such rectangular cross-sectional is commonly referred to as band shape or sheet ion beam.In addition, the width due to the face being positioned at the ribbon ion beam of XZ plane is greater than the width in other face, so in the present invention, the face this being positioned at the ribbon ion beam of XZ plane is called primary flat.
As an ionogenic example of the ion beam 1 described in generation, there are known bucket type ion source.More particularly, the plasma that this bucket type ion source comprises cuboid generates container, and this plasma generates multiple permanent magnets that container has generation cusped magnetic field (カ ス プ magnetic Games); Multiple filament, the length direction along container is configured in plasma and generates in container; Peristome, is formed in plasma and generates on a side of container; And extraction electrode system, be made up of the multiple electrode groups adjoining configuration with described peristome.
The both ends of the length direction of the ion beam 1 recorded in (A) of Fig. 1 are parallel to each other along Z-direction.But in fact the both ends of the length direction of ion beam 1 are not in completely parallel state, and are in the state of general parallel orientation.This is because ion beam 1 is subject to the impact of space charge effect, with advancing in z-direction and dispersing.If have the energy of ion beam 1 and the ion beam 1 of positive charge, then the degree of dispersing also changes because being present in the ratio of the electronics in beam path.In addition, think that the configuration error of the multiple electrode groups forming extraction electrode system also has an impact to the collimation of ion beam 1.Therefore, be difficult to make ion beam 1 be in completely parallel state in the longitudinal direction.
Consider described item, in the present invention, ion beam 1 illustrative in (A) of Fig. 1 is called the ion beam 1 of the length direction general parallel orientation of ion beam 1, or is called the ion beam 1 that the length direction of ion beam 1 is parallel in design.
On the other hand, for the ion beam 1 recorded in (B) of Fig. 1, the length direction of ion beam 1 is dispersed (expansion) along Z-direction.The width W X1 of the length direction recorded in (B) of Fig. 1 advances in z-direction because of ion beam 1, expands as width W X2, disperses described in can easily understanding thus.
Even such ion beam 1, still can be identical with the ion beam 1 shown in (A) of Fig. 1, be referred to as band shape or sheet ion beam, may be used for the present invention.In addition, as the ionogenic example generating such ion beam 1, there are known Bai Nasishi (バ ー Na ス type) ion source.More particularly, this Bai Nasishi ion source comprises: the plasma of cuboid generates container; Filament, is configured in described plasma and generates in container; Peristome, is formed in plasma and generates on a side of container; And at least one electrode, arrange with described peristome is adjacent, there is the opening of slit-shaped.In addition, even the situation of the ion beam 1 shown in (B) of Fig. 1, identical with the ion beam 1 shown in (A) of Fig. 1, the impact because of space charge effect can produce dispersing slightly.
(A) of Fig. 2, Fig. 2 (B) in depict the example of ion implantation apparatus IM of the present invention.The plane described in (A) of Fig. 2 and (B) of Fig. 2 is different.In these figures, depict the ion beam 1 shown in (A) of Fig. 1, but, replace therewith, also can use the ion beam 1 shown in (B) of Fig. 1.
Advance in the direction that the ion beam 1 generated by ion source 2 tilts to intersect along the direction of the magnetic field B produced with the inside at the mass separation magnet 3 with a pair magnetic pole 9.As shown in (B) of Fig. 2, the direct of travel injecting the ion beam 1 in mass separation magnet 3 deflects in the longitudinal direction due to magnetic field B.
Various ionic species is comprised in the ion beam 1 generated by ion source 2, the intensity of the magnetic field B in adjustment mass separation magnet 3, makes the ion beam 1 only comprising desired ionic species by being configured in the analysis slit 4 in the downstream (Z-direction side) of mass separation magnet 3.
Imported in process chamber 5 by the ion beam 1 after analyzing slit 4.Now, the length direction of ion beam 1 is sized to the size of the substrate 6 (such as glass substrate, silicon chip etc.) be greater than on equidirectional.In addition, by the reciprocal in the direction of arrow A substrate 6 of drive arrangements in process chamber 5 of not shown driving mechanism, whole of substrate 6 is carried out ion implantation process.
In the present invention, as shown in (A) of Fig. 2, the direct of travel injecting the ion beam 1 in mass separation magnet 3 tilts to intersect with the direction of the magnetic field B produced by mass separation magnet 3.In other words, magnetic field B is produced in the mode traversing through the primary flat (being positioned at the face of XZ plane) of the ion beam 1 of mass separation magnet 3 obliquely at mass separation magnet 3.By such structure, the direct of travel of ion beam 1 can be made at the length direction upper deflecting of ion beam 1, and make the ion beam 1 comprising desired ionic species pass through selectively by analyzing slit 4 on the thickness direction of ion beam 1.
Line segment C1-C1 ~ the C3-C3 recorded in (A) of (C) expression Fig. 2 of (A) ~ Fig. 3 of Fig. 3 cuts off appearance during mass separation magnet 3.As shown in the FIG., mass separation magnet 3 comprises yoke 7 and a pair magnetic pole 9 of H-shaped, and this pair magnetic pole 9 is given prominence to from described yoke 7, and the primary flat across ion beam 1 is oppositely arranged.On the length direction of ion beam 1, the size of each magnetic pole 9 is fully greater than the size of ion beam 1.In addition, each magnetic pole 9 is wound with coil 8, uses not shown power supply, the magnitude of current and the sense of current of coil 8 are flow through in adjustment.Thus, between magnetic pole 9, generate magnetic field B facing one direction.In addition, at this, make yoke shape be H-shaped, but be not limited thereto, yoke shape also can be made to be other shape, such as, also can use the yoke of C shape.
When this example, in each position of the length direction (X-direction) of ion beam 1, substantially equal by the length of the track of the ion beam 1 of the inside of mass separation magnet 3.If enumerate concrete example, then, when the track of the some P1 of the mass separation magnet 3 to (B) by Fig. 2 and the ion beam 1 of some P3 compares with the length of track of the ion beam 1 by some P2 and some P4, their cardinal principles are identical.At this, illustrate the track at the both ends at mass separation magnet 1, but, such as, in mass separation magnet 3, also substantially equal with the length of the track at both ends in the length of the track of the central portion of the length direction of ion beam 1.
Therefore, if after being conceived to by mass separation magnet 3, the ion beam that comprises the ionic species with same quality, then the position along the X direction on the direction of magnetic field B is substantially identical.This (D) with reference to Fig. 4 is described later.In addition, each axle of the X-axis recorded in (B) of Fig. 2, Y-axis, Z axis is corresponding with by the ion beam 1 between ion source 2 and mass separation magnet 3, and when ion beam 1 is by other position, the direction of each axle corresponds to position and takes the circumstances into consideration to change.Direction about each axle takes the circumstances into consideration to change this point on beam path, (B), (A) of Fig. 5 of Fig. 4 described later, (C) of (A) ~ Fig. 8 of Fig. 8, Fig. 9 (B) in be also identical.
Advance in the direction that ion beam 1 tilts to intersect along the direction with magnetic field B.Therefore, in (C) of (A) ~ Fig. 3 of Fig. 3, advance on beam path with ion beam 1, between magnetic pole 9, the position of the ion beam 1 of flight changes from a magnetic pole 9 (magnetic pole 9 on the right side of illustrated paper) towards another magnetic pole 9 (magnetic pole 9 on the left of illustrated paper).In addition, the distance between the magnetic pole 9 of formation mass separation magnet 3 is certain along Z-direction, makes the direct of travel of ion beam 1 at the length direction upper deflecting of ion beam 1 by the magnetic field B produced between magnetic pole 9.Therefore, roughly changed towards the paper upper left side of Fig. 3 by the direct of travel of the ion beam 1 of the inside of mass separation magnet 3.
(D) of (A) ~ Fig. 4 of Fig. 4 is the key diagram being carried out mass separation by mass separation magnet 3 and analysis slit 4 pairs of ion beams 1 of record in (A) of Fig. 2 and (B) of Fig. 2.The ion beam 1 injecting the length direction general parallel orientation in mass separation magnet 3 is advanced towards the direction of the direction oblique with the magnetic field B produced in mass separation magnet 3.As shown in (A) of Fig. 4, this ion beam 1 can be divided into the composition Z parallel with the direction of magnetic field B band the composition Z vertical with the direction of magnetic field B b ⊥.
As the composition Z of the composition parallel with the direction of magnetic field B bnot by the deflecting action of magnetic field B.On the other hand, as the composition Z of the composition vertical with the direction of magnetic field B b ⊥be subject to the deflecting action of magnetic field B, if the electric charge of ion beam 1 is just, then produce towards the Lorentz force near oneself direction, side of paper.Because this Lorentz force, the direct of travel of ion beam 1 is at the length direction upper deflecting of ion beam 1.
(B) of Fig. 4 represents the track at the both ends of the length direction of the ion beam 1 of advancing in the inside of mass separation magnet 3.The ionic species that the ion beam 1 injecting mass separation magnet 3 comprises desired ionic species, quality is less than desired ionic species and quality are greater than the ionic species of desired ionic species.At this, the appearance that the track showing each ion beam comprising each ionic species is separated in mass separation magnet 3.
In (B) of Fig. 4, solid line is the track IBd of the ion beam 1 comprising desired ionic species, and dotted line is comprise the track IBh that quality is greater than the ion beam 1 of the ionic species of desired ionic species.In addition, single dotted broken line is comprise the track IBI that quality is less than the ion beam 1 of the ionic species of desired ionic species.
If the energy of ion beam 1 is identical, then the amount of deflection of ion beam 1 in mass separation magnet 3 (at this, the amount that the direct of travel of ion beam 1 is bending on the length direction of ion beam 1) depends on the quality of ionic species substantially.Therefore, if comprise the ion beam 1 of the large ionic species of quality, then its amount of deflection is little, if comprise the ion beam 1 of the little ionic species of quality, then its amount of deflection is large.If amount of deflection is different, then as shown in (B) of Fig. 4, produce different by the track comprising each ion beam of each ionic species of mass separation magnet 3 inside.In addition, in (B) of Fig. 4, in the position that ion beam 1 penetrates from mass separation magnet 3, illustrate X-axis, Y-axis, Z axis, but, this X-axis, Y-axis, Z axis for be by mass separation magnet 3 after the ion beam 1 comprising desired ionic species.
The track of the ion beam 1 comprising each ionic species is depicted in (C) of Fig. 4.In the figure, the longitudinal axis represents the position on B direction, magnetic field, and transverse axis represents the position on beam path.In addition, the initial point of this figure is the entrance (ion beam 1 injects the position of mass separation magnet 3) of mass separation magnet 3, identical with (B) of Fig. 4, the track comprising the ion beam of desired ionic species indicated by the solid line, the track comprising quality and be less than the ion beam 1 of the ionic species of desired ionic species is represented, the track comprising quality and be greater than the ion beam 1 of the ionic species of desired ionic species represented by dashed line with single dotted broken line.In addition, ion beam 1 in mass separation magnet 3 is injected between magnetic pole 9.Therefore, at the initial point place of (C) of Fig. 4, the position between the magnetic pole 9 that the position on B direction, magnetic field is injected with ion beam 1 is for benchmark.The position do not meant that on B direction, magnetic field at this initial point is zero, that is, do not mean that ion beam 1 is positioned on magnetic pole 9.
As shown in (C) of Fig. 4, if the same position on beam path, compare the position on B direction, magnetic field, then the track comprising the ion beam 1 of the different ionic species of quality is different respectively.This difference is described, as confirmable in (B) with reference to Fig. 4, the distance (length of the track IBl in mass separation magnet 3) that the ion beam comprising the little ionic species of quality passes through in mass separation magnet 3 is greater than the distance (length of the track IBd in mass separation magnet 3) that the ion beam 1 that comprises desired ionic species passes through in mass separation magnet 3, the distance (length of the track IBh in mass separation magnet 3) that the ion beam comprising the large ionic species of quality passes through in mass separation magnet 3 is less than the distance (length of the track IBd in mass separation magnet 3) that the ion beam 1 that comprises desired ionic species passes through in mass separation magnet 3.
As previously mentioned, ion beam 1 is advanced along the direction of the direction oblique with the magnetic field B produced in mass separation magnet 3.Therefore, corresponding to the distance part out that the ion beam 1 comprising the little ionic species of quality passes through in mass separation magnet 3, with comprise other quality ionic species ion beam 1 compared with, the distance that the ion beam 1 comprising the little ionic species of quality is advanced on the direction of the direction oblique with magnetic field B is elongated.On the contrary, corresponding to the short part out of distance that the ion beam 1 comprising the large ionic species of quality passes through in mass separation magnet 3, with comprise other quality ionic species ion beam 1 compared with, the distance that the ion beam 1 comprising the large ionic species of quality is advanced on the direction of the direction oblique with magnetic field B shortens.As shown in (A) of Fig. 4, because the ion beam 1 of advancing in the B of magnetic field comprises the composition in B direction, magnetic field, so the distance that ion beam 1 is advanced in the B of magnetic field is longer, the distance advanced in the direction of magnetic field B is also longer.Therefore, as shown in (C) of Fig. 4, if the same position on beam path compares, then the position of each ion beam 1 on the direction of magnetic field B comprising the different ionic species of quality produces difference.
In the analysis slit 4 that (C) of Fig. 4 records, be formed along the elongated slit from the inboard direction outwardly of paper.The size (size of X-direction) of the long side direction of this slit is greater than the size of the length direction of ion beam 1.In addition, the size (size of Y-direction) of the short side direction of slit is set to that the ion beam 1 only making to comprise desired ionic species passes through.Specifically, as shown in (C) of Fig. 4, quality is less than ion beam 1 that the ionic species of desired ionic species and quality be greater than the ionic species of desired ionic species with analyze slit 4 and collide, only make the ion beam 1 comprising desired ionic species pass through.In addition, according to resolution when handled ionic species and mass separation, the size of the slit of short side direction is set as appropriate size.Carry out mass separation of the present invention like this.
As confirmable with reference to (C) of Fig. 4, Fig. 4 (D) although in the direction of magnetic field B is not shown, the direction of magnetic field B is substantially consistent with Y-direction.As what illustrated with reference to (B) of Fig. 2, on the length direction of ion beam 1, substantially equal by the track of the ion beam 1 of the inside of mass separation magnet 3.Therefore, as shown in (D) of Fig. 4, on the length direction of ion beam 1, the position of ion beam 1 on the direction (because this figure is the figure observed from Z-direction, so the direction of magnetic field B is Y-direction substantially) of magnetic field B comprising desired ionic species is substantially equal.At this, although illustrate only the track at the both ends of the length direction of ion beam 1, the position of track on the direction of magnetic field B for the ion beam 1 by other position (such as, the central portion of length direction) is also substantially identical.
On the other hand, on the length direction of ion beam 1, also can be different in the length of the track of each position by the ion beam 1 of the inside of mass separation magnet 3.In this case, if for the track at the both ends of the length direction at ion beam 1, then by the track of an end compared with the track by the other end, the position step-down on B direction, magnetic field or uprise.If the difference of the position on B direction, magnetic field becomes large, then have on the length direction of ion beam 1, the characteristic of ion beam 1 produces different problems.But if the characteristic not being both the semiconductor device that can make manufacture on the substrate 6 carrying out ion implantation process of described characteristic is the degree of general uniform, then the difference in ion beam 1 characteristic is in the longitudinal direction completely no problem.Therefore, also can form mass separation magnet 3 in the following manner, that is, described mode is: in the deviation range of the characteristic of the semiconductor device allowed, and makes the length of the track of ion beam 1 each position in the longitudinal direction different rightly.
In addition, in order to produce in mass separation magnet 3, ion beam 1 characteristic deviation in the longitudinal direction revises, consider the substrate 6 irradiated to ion beam 1 from ion source 2, the length direction of ion beam 1 makes the track of the ion beam 1 by each position do not produce difference relative to the direction of magnetic field B.To this, as long as such as limit makes substrate 6 inclined side drive it or sets the configuration of each parts rightly, the difference of the track on B direction, magnetic field is revised.
(A) of Fig. 5, Fig. 5 (B) in depict the asynchronous appearance of track of ion beam 1 each position in the longitudinal direction made by the inside of mass separation magnet 3.Except track difference, basic structure is identical with the situation that (D) of (the A) ~ Fig. 4 with reference to Fig. 4 illustrated, therefore omits the detailed description to the content repeated at this.
(A) of Fig. 5 represents the example that the length of the track at the both ends of the length direction of the ion beam 1 of advancing in the inside of mass separation magnet 3 is different.Specifically, at this, the size of P1-P3 curve (the track IBd as the track of the ion beam of tie point P1 and some P3) is greater than the size of P2-P4 curve (as the track IBd of tie point P2 with the track of the ion beam of some P4).The track (track IBh and track IBI) formed for other the ionic species that quality is different is also identical, is greater than the distance of the track by a P2 by the distance of the track of a P1.
(B) of Fig. 5 represent (A) of Fig. 5 by behind the inside of mass separation magnet 3, the track IBd of each ion beam 1 of comprising desired ionic species is by analyzing the appearance of slit 4.In (A) of Fig. 5, represent on the left of the paper of (B) of Fig. 5 by track IBd, IBh, the IBl of the ion beam 1 after a P1, represent on the right side of the paper of (B) of Fig. 5 by track IBd, IBh, the IBl of the ion beam 1 after a P2.As what illustrated with reference to (A) of Fig. 5, be longer than the distance of the track of the ion beam 1 after by a P2 by the distance of the track of the ion beam 1 after a P1.Therefore, as shown in (B) of Fig. 5, on the direction (roughly the upward direction of paper) of magnetic field B, different by the position of the track of the ion beam 1 after each point.In addition, for the track that the ion beam 1 comprising the different ionic species of quality is formed, can say it is also same.
On the length direction of ion beam 1, the position of the track on the direction of magnetic field B is different, the relation between the track comprising the ion beam 1 of desired ionic species and the track of the ion beam 1 comprising the ionic species beyond the different desired ionic species of quality also produces difference.Specifically, in (B) of Fig. 5, the difference between track IBd, IBh, IBl of shown in the difference between track IBd, IBh, IBl shown on the right side of paper, the ion beam 1 that comprises each ionic species is greater than on the left of paper, to comprise each ionic species ion beam 1.Due to the difference of ion beam 1 character in the longitudinal direction, (such as, the expansion of ion beam 1 that causes of space charge effect large, expand little characteristic) produces difference so ion beam 1 characteristic in the longitudinal direction.But, as previously mentioned, if control in the scope that can allow in the characteristic of semiconductor device manufactured on substrate 6, even then such structure is also passable.
Preferably, ion beam 1 irradiates to substrate 6 with the state of general parallel orientation in the longitudinal direction.If the state of dispersing with length direction or restrain is irradiated on substrate 6, then because ion beam 1 is inconsistent to the irradiating angle of substrate 6 in the longitudinal direction, so the characteristic having the semiconductor device manufactured on substrate 6 produces uneven problem.Therefore, in order to the ion beam 1 of general parallel orientation is in the longitudinal direction irradiated on substrate 6, consider to make the end shape of magnetic pole 9 be following shape.
The key diagram that (A) of Fig. 6, (B) of Fig. 6 are the end construction of magnetic pole 9.As shown in (A) of Fig. 6, consider that the ion beam 1 of length direction general parallel orientation injects the situation in semicircular mass separation magnet 3.In the inside of this mass separation magnet 3, B vertical paper in magnetic field produces toward the outer side from paper inboard.In addition, the shape of magnetic pole 9, represented by dotted line, conveniently, represents in the mode that the entrance side end face of mass separation magnet 3 is consistent with the end face of magnetic pole 9 with outlet side end face at this.But, in fact, because magnetic pole 9 is configured in the inside region of mass separation magnet 3, so each end face is inconsistent.In addition, owing to being illustrated by plane, so look, ion beam 1 is advanced along the direction vertical with the direction of magnetic field B, but is not like this.When this example, also identical with the structure of aforesaid embodiment, relative to the direction of the magnetic field B produced toward the outer side from paper inboard perpendicular to paper, ion beam 1 is advanced along the direction of the direction oblique with this magnetic field B.
As shown in the drawing, if make the ion beam 1 of general parallel orientation in the longitudinal direction be deflected to semicircle, then can penetrate the ion beam 1 of general parallel orientation in the longitudinal direction from mass separation magnet 3.But in this case, the size of mass separation magnet 3 must be larger than mass separation magnet in the past.Therefore, such structure is unpractical.
Therefore, in order to make the size of mass separation magnet 3 less, in the present invention, the end of magnetic pole 9 is positioned at position that the focal position F converged than the track of ion beam 1 is in the longitudinal direction closer to the entrance side of mass separation magnet 3.The direct of travel of ion beam 1 penetrated from mass separation magnet 3 is the direction of the tangent line of drawing from the track of the ion beam 1 near the outlet by mass separation magnet 3.Therefore, in the present invention, the end of magnetic pole 9 is configured in the position of the entrance side being closer to mass separation magnet 3 than focal position F, and the allocation position of the end of magnetic pole 9 be positioned at connect following position line on, on track by the ion beam 1 of two or more position on the length direction that the described position be connected is located at ion beam 1, the tangent line of the track of the ion beam 1 of the described two or more position of drawing from the described position be connected is general parallel orientation.
Specifically, the tangent line of being drawn by the track of the ion beam 1 on the left of illustrated paper from the length direction at ion beam 1 is set to tangent line L1, the tangent line of being drawn by the track of the ion beam 1 on the right side of illustrated paper from the length direction at ion beam 1 is set to tangent line L2.In addition, arranged the end of magnetic pole 9 on online U-U, line U-U connects the some P3 and some P4 line that are positioned at the position of two tangent line general parallel orientation.At this, be illustrated for the tangent line of being drawn by the track at the both ends of ion beam 1 from the length direction at ion beam 1, but, obviously, even the tangent line of drawing from the track of the ion beam 1 by other position is also passable.
Represent in (B) of Fig. 6 according to the mass separation magnet 3 that the constructive method of the end of the magnetic pole 9 illustrated with reference to (A) of Fig. 6 is made into.If be formed as described above the end shape of magnetic pole 9, then not only can reduce the size of mass separation magnet 3, but also the ion beam 1 of general parallel orientation can be penetrated from mass separation magnet 3.But in this case, be of a size of size W1 relative to the length direction of the ion beam 1 when injecting in mass separation magnet 3, the length direction of the ion beam 1 when penetrating from mass separation magnet 3 is of a size of the size W2 being less than size W1.Therefore, when the size of substrate 6 is large, size W1 must be made sufficiently large.
In order to improve the situation owing to being caused the size of the length direction of ion beam 1 to reduce by mass separation magnet 3, consider the structure shown in (C) of Fig. 6.In this example embodiment, contrary with the situation of (B) of Fig. 6 by the direct of travel of the ion beam 1 of mass separation magnet 3.In addition, perpendicular to paper outside paper towards generation magnetic field, inboard B.If adopt such structure, then can be expanded the size of the length direction of ion beam 1 by mass separation magnet 3.In addition, also can determine in this example embodiment, as previously mentioned, the end being arranged on the magnetic pole 9 of the outlet side of mass separation magnet 3 is configured in connect and the tangent line of drawing from the track of ion beam 1 is become on the some P1 of general parallel orientation and the line of some P2.
In (D) of (A) ~ Fig. 7 of Fig. 7, the ion beam 1 generated by ion source 2 is assumed to the ion beam 1 recorded in (B) of Fig. 1.Identical with (A) of Fig. 6, (A) of Fig. 7 represents the track by the ion beam 1 of the inside of semicircular mass separation magnet 3.It is identical that mass separation magnet 3 and the viewpoint for the tangent line etc. of the track of ion beam 1 and (A) by Fig. 6 illustrated, so in this omission detailed description thereof, and only describes simply.
Identical with the example of (A) of Fig. 6, the end of magnetic pole 9 is configured on online U-U, this line U-U is the line of tie point P1 and some P2, and some P1 and some P2 is positioned at the point that the tangent line L1 that draws from the track of the ion beam 1 of the inside by mass separation magnet 3 and tangent line L2 becomes the position of mutual general parallel orientation.
Consequently, being made into the mass separation magnet 3 as shown in (B) of Fig. 7, being of a size of size W3 relative to the length direction of the ion beam 1 during incidence, the ion beam 1 with the size W4 being greater than size W3 can be expanded as when penetrating.
On the other hand, also as shown in (C) of Fig. 7, the direct of travel of ion beam 1 can be made contrary with the example of (B) of Fig. 7, the size of the length direction of ion beam 1 narrowed.Its reason is: if the size of substrate 6 is little, then the width of the length direction of ion beam 1 need not be made for so large.In addition, in order to carry out ion implantation process to substrate 6 at short notice, the beam electronic current amount of the unit are increasing ion beam 1 can be considered.In this case, also can use the structure shown in (C) of Fig. 7, the size of the length direction of ion beam 1 is narrowed, thus increase beam electronic current amount.Certainly, the structure shown in (B) of the Fig. 6 described before also can using, increases beam electronic current amount.
As mentioned above, in order to change the size of length direction of the ion beam 1 penetrated from mass separation magnet 3, can consider the ion source 2 originally arranged to be replaced by the other ion source 2 of the different ion beam 1 of the size that generates length direction; Or ion source 2 is tilted, the size of the ion beam 1 injected in mass separation magnet 3 is narrowed or becomes large.Equally, even if change the configuration of mass separation magnet 3, the size of the length direction of the ion beam 1 penetrated from mass separation magnet 3 also can be made to narrow or become large.
(D) of Fig. 7 represents that the configuration by changing mass separation magnet 3 expands the example of the size of the length direction of ion beam 1.(D) of Fig. 7 represents structure during mass separation magnet 3 anglec of rotation θ 1 of (B) that make Fig. 7 centered by a P2 middle record.In this case, the track represented by the example of (B) of Fig. 7 is different from by the track of the ion beam 1 of the inside of mass separation magnet 3.Specifically, by the track of the ion beam 1 of the end on the left of paper compared with the example of (B) of Fig. 7, angle θ 2 is expanded laterally.Thus, the ion beam 1 of the size W5 being greater than size W4 can be had from mass separation magnet 3 injection.
In addition, in the example of (D) of described Fig. 7, penetrate the ion beam 1 dispersed in the longitudinal direction from mass separation magnet 3, but, as long as the degree of dispersing is within to a certain degree, even if then such ion beam 1 is irradiated on substrate 6, also no problem.Its reason is: if can by substrate 6 manufacture semiconductor device Characteristics Control in allowed limits, even the ion beam then dispersed in the longitudinal direction 1 is also no problem.
The ion implantation apparatus IM enumerated in (A) of replacement Fig. 2, (B) of Fig. 2, also can use the ion implantation apparatus IM of (C) of (A) ~ Fig. 8 of Fig. 8.
In the ion implantation apparatus IM of (A) of Fig. 8, between ion source 2 and mass separation magnet 3, be configured with a pair electrostatic deflection electrodes 10.In the example of (A) of Fig. 2, along and the direction that tilts, the direction of magnetic field B that produces between a pair magnetic pole 9 of mass separation magnet 3, ion beam 1 is penetrated (advancing) from ion source 2.On the other hand, in the example of (A) of Fig. 8, the direction that the direction along the magnetic field B produced between a pair magnetic pole 9 of mass separation magnet 3 is vertical, penetrates ion beam 1 from ion source 2.In addition, by electrostatic deflection electrodes 10, make the direct of travel of ion beam 1 at the thickness direction upper deflecting of ion beam 1 in the mode tilted with the direction of magnetic field B.
In this example embodiment, ion beam 1 is for having the ion beam of positive charge.In addition, each electrostatic deflection electrodes 10 has the size being greater than ion beam 1 on the length direction of ion beam 1, and the primary flat across ion beam 1 is oppositely disposed.In addition, each electrostatic deflection electrodes 10 is connected with not shown power supply, as illustrated, being configured at the voltage electrode on the upside of paper applying negative (-), the voltage electrode on the downside of paper applying just (+) is being configured in.Adopt such structure, the electrode deflection of the ion beam 1 that can make to have positive charge on the upside of the paper being applied with negative voltage.
The voltage of power supply can be fixing, but preferably, the voltage of power supply is variable thus can carries out setting change.In this case, even if the configuration of ion source 2 and mass separation magnet 3 etc. creates error slightly, also by changing the value of the voltage be applied in electrostatic deflection electrodes 10, described error can be revised.
In (A) of Fig. 8, electrostatic deflection electrodes 10 is configured between ion source 2 and mass separation magnet 3, but, also as shown in (B) of Fig. 8, electrostatic deflection electrodes 10 can be configured in the inside of mass separation magnet 3.If electrostatic deflection electrodes 10 is made up of heavy metal, then can be subject to the sputtering of ion beam 1 and be mixed into substrate 6, in this case, the possibility that existence can cause the manufacture of semiconductor device bad.Therefore, can consider to utilize carbon to make electrostatic deflection electrodes 10, or when substrate 6 is silicon chip, make electrostatic deflection electrodes 10 by silicon.In addition, when internal configurations a pair electrostatic deflection electrodes 10 of magnetic field B, preferably, the direction of the electric field E produced between electrostatic deflection electrodes 10 is parallel with the direction of magnetic field B.By adopting such structure, E × B drift (De リ Off ト) deflecting action of causing can not be produced to the ion beam 1 of the inside by mass separation magnet 3.
In order to make ion beam 1 replication at the thickness direction of ion beam 1, can consider between mass separation magnet 3 and process chamber 5, configure the second electrostatic deflection electrodes 11, this example represents in (C) of Fig. 8.Except the polarity of the voltage on the electrode that the primary flat be applied to across ion beam 1 configures is contrary, electrostatic deflection electrodes 10 and the second electrostatic deflection electrodes 11 adopt identical structure.By adopting such structure, ion beam 1 irradiating angle in a thickness direction irradiated to substrate 6 can be adjusted.
In addition, (A) of Fig. 9, the ion implantation apparatus IM shown in (B) of Fig. 9 can also be used.As shown in (A) of Fig. 9, in this example embodiment, between ion source 2 and mass separation magnet 3, little deflection electromagnet 12 is configured with.This point is different from the example of (A) of Fig. 2, (B) of Fig. 2.Deflection electromagnet 12 has a pair magnetic pole 13 that the primary flat across ion beam 1 be oppositely disposed, and between magnetic pole 13, the direction of the magnetic field B of generation is vertical with the direct of travel of the ion beam 1 penetrated from ion source 2.
As shown in (B) of Fig. 9, by deflection electromagnet 12, ion beam 1 deflects in the longitudinal direction.By this deflecting action, the size of the length direction of the ion beam 1 injected in mass separation magnet 3 can be changed in XZ plane, so the size of the length direction of the ion beam 1 penetrated from mass separation magnet 3 can be adjusted.In addition, the nargin relevant to the component configuration of ion source 2 and other ion optics can also be improved.In addition, another deflection electromagnet 12 also can be set between mass separation magnet 3 and process chamber 5.If like this, then can the direct of travel of ion beam 1 that irradiates of subtend substrate 6 and size in the longitudinal direction revise.
In addition, because the relative position relationship of the direct of travel in the direction with ion beam 1 that can not change the magnetic field B produced by mass separation magnet 3 is just passable, so change size (distance apart from yoke 7) from the yoke 7 of mass separation magnet 3 a pair magnetic pole 9 outstanding to ion beam 1 side along Z-direction in the mode making a magnetic pole 9 and shorten gradually, and to make another magnetic pole 9 mode elongated gradually change size (distance apart from yoke 7) from the yoke 7 of mass separation magnet 3 a pair magnetic pole 9 outstanding to ion beam 1 side.In addition, the size between magnetic pole 9 also can be made to fix, and on this basis, according to the shape of magnetic pole 9, in the mode making the direct of travel of ion beam 1 become suitable direction, ion source 2 be tilted, etc.
In embodiment up to the present, for the purpose of simplifying the description, the explanation to the magnetic field (fringing field) that the end of the magnetic pole 9 at mass separation magnet 3 produces is eliminated.If consider this fringing field, then as shown in (A) of Figure 10, analyze the size that the allocation position of slit 4 is positioned at the thickness direction of ion beam 1 and be roughly minimum position.
(A) of Figure 10 represents when considering the fringing field Bf produced in the end of the entrance side of the ion beam 1 of mass separation magnet 3 and the magnetic pole 9 of outlet side, the appearance of the change in size of the thickness direction of ion beam 1.
As in the past known, relative to the direction vertical with the magnetic pole end face of the secondary magnet (ダ イ Port ー Le マ グ ネ ッ ト) with a pair magnetic pole, when injecting ion beam obliquely, because fringing field Bf has the power making it restrain or disperse to ion beam effect.In addition, although also relevant with the direction in the magnetic field produced between the magnetic pole of secondary magnet, but, if edition with parallel text invention is considered, then the relation of the incident direction of the direction vertical with magnetic pole end face described here and ion beam is the relation in the plane that the direction of the magnetic field B produced between magnetic pole 9 is vertical.
Be described according to object lesson.(B) of Figure 10 represents the appearance of the plane that the magnetic field B of the ion implantation apparatus IM that record middle with (A) of Figure 10 is vertical.As shown in (B) of this Figure 10, the direction P ⊥ vertical relative to the end face of the magnetic pole 9 with the entrance side that ion beam 1 is injected, ion beam 1 is injected with angle θ 3.Now, due to magnetic field be oriented perpendicular to paper outside paper towards inboard, so due to fringing field Bf, ion beam 1 is restrained in a thickness direction.
On the other hand, the direction P ⊥ vertical relative to the end face of the magnetic pole 9 with the outlet side that ion beam 1 penetrates, ion beam 1 flatly penetrates.Therefore, fringing field Bf does not apply convergence or disperse function to ion beam 1.
As shown in (A) of Figure 10, at the entrance side of mass separation magnet 3, fringing field Bf applies astriction in a thickness direction.In addition, at the outlet side of mass separation magnet 3, fringing field Bf does not apply convergence or disperse function, so ion beam 1 is advanced with the state of convergence in a thickness direction, and converge in focus in the downstream of mass separation magnet 3, by being configured in the analysis slit 4 of this position, the separation to the ion beam comprising unwanted ionic species can be realized.
Like this, if analysis slit 4 to be configured in the focal position of the thickness direction of ion beam 1, then the size of the short side direction of analysis slit 4 can be made to narrow.Consequently, the separation accuracy that the ion beam comprising desired ionic species is separated with the ion beam of the ionic species comprised beyond desired ionic species can be improved.At this, although illustrate the example at focal position Allocation Analysis slit 4, obviously, analysis slit 4 is configured near focal position and also can expects to realize identical effect.Therefore, analyze slit 4 and just in time need not be configured in focal position, as long as analysis slit 4 is configured in the position of roughly focus.In addition, there is the impact of the energy because of ion beam 1, space charge effect, ion beam 1 does not converge in the situation of focus yet.If consider this situation, then can consider that size analysis slit 4 being configured in the thickness direction of ion beam 1 becomes substantially minimum position.
In this example embodiment, as shown in (A) of Figure 10, the ion beam 1 injecting the entrance side of mass separation magnet 3, by near the central authorities between the magnetic pole 9 of entrance side, so from Y-direction and the direction contrary with Y-direction, applies towards the equal power of inner side ion beam 1.On the other hand, at ion beam 1 by near being configured in the position of magnetic pole 9 of Y-direction side, on ion beam 1, only effect has towards the power with Y-direction opposite side.Even if in this case, at ion beam 1 close to magnetic pole 9 side (the paper upper portion of ion beam 1) with away from magnetic pole 9 side (the paper lower portion of ion beam 1), towards varying in size of the power with the effect of Y-direction opposite side, so ion beam 1 is restrained in a thickness direction.Therefore, in YZ plane, ion beam 1 is not limited near the central authorities shown in (A) of Figure 10 by the position between magnetic pole 9.
In addition, in (B) of Figure 10, the direction P ⊥ vertical with the end face of the magnetic pole 9 of the outlet side of mass separation the magnet 3 and direct of travel IB of ion beam 1 zfor the relation of level, but replace therewith, this both relation also can be tilt.
Such as, to penetrate ion beam 1 relative to the direction P ⊥ perpendicular with the end face of magnetic pole 9 towards the oblique below of paper or the angled mode of oblique upper tool.If like this, then the fringing field Bf owing to producing at the outlet side of mass separation magnet 3, ion beam 1 can convergence further at thickness direction.Its reason is: at the outlet side of mass separation magnet 3, and as shown in (A) of Figure 10, ion beam 1 is near magnetic pole 9 side.Also can like this, with two benches, ion beam 1 be restrained in a thickness direction.
In addition, in (B) of Figure 10, the direct of travel IB of ion beam 1 is made zrelative to the direction P ⊥ vertical with the end face of magnetic pole 9, inject on the downside of paper.Like this, at the entrance side of mass separation magnet 3, ion beam 1 is dispersed in a thickness direction.Then, as above, at the outlet side of mass separation magnet 3, ion beam 1 penetrates obliquely relative to the direction P ⊥ vertical with the end face of magnetic pole 9.Now, by making to be greater than incident angle at entrance side relative to the injection angle in the direction vertical with the end face of magnetic pole 9, can expect in the front and back by mass separation magnet 3, the size of the thickness direction of ion beam 1 is reduced on the whole.
Except described content, obviously, also without departing from the spirit and scope of the present invention, various improvement and distortion can be carried out.

Claims (20)

1. an ion implantation apparatus, is characterized in that comprising:
Ion source, generates ribbon ion beam long in one direction;
Mass separation magnet, be configured in described ionogenic downstream, there is a pair magnetic pole, this a pair magnetic pole is oppositely arranged across the primary flat of described ion beam, the primary flat of described ion beam is positioned at the plane defined by the length direction of described ion beam and direct of travel, by the magnetic field produced between described magnetic pole, make the direct of travel of described ion beam at the length direction upper deflecting of described ion beam;
Analyze slit, in the ion beam after by described mass separation magnet, to comprise desired ionic species ion beam is passed through; And
Process chamber, is configured with substrate, by the ion beam irradiation after described analysis slit on described substrate, wherein,
The direction in the magnetic field produced between described magnetic pole traverses through the primary flat of the described ion beam of described mass separation magnet inside obliquely.
2. ion implantation apparatus according to claim 1, is characterized in that, the size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam.
3. ion implantation apparatus according to claim 1, is characterized in that, the distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet.
4. ion implantation apparatus according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet.
5. ion implantation apparatus according to claim 1, is characterized in that, the direct of travel of the described ion beam generated by described ion source tilts to intersect with the direction in the magnetic field produced in described mass separation magnet.
6. ion implantation apparatus according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
The direct of travel of the described ion beam generated by described ion source tilts to intersect with the direction in the magnetic field produced in described mass separation magnet.
7. ion implantation apparatus according to claim 1, is characterized in that,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source tilts to intersect with the direction in the magnetic field produced in described mass separation magnet.
8. ion implantation apparatus according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source tilts to intersect with the direction in the magnetic field produced in described mass separation magnet.
9. ion implantation apparatus according to claim 1, it is characterized in that, the direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and the beam path between described ion source and described mass separation magnet is configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
10. ion implantation apparatus according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and the beam path between described ion source and described mass separation magnet is configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
11. ion implantation apparatuses according to claim 1, is characterized in that,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and the beam path between described ion source and described mass separation magnet is configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
12. ion implantation apparatuses according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and the beam path between described ion source and described mass separation magnet is configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
13. ion implantation apparatuses according to claim 1, it is characterized in that, the direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and in described mass separation magnet, be configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
14. ion implantation apparatuses according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and in described mass separation magnet, be configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
15. ion implantation apparatuses according to claim 1, is characterized in that,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and in described mass separation magnet, be configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
16. ion implantation apparatuses according to claim 1, is characterized in that,
The size of described magnetic pole on the length direction of described ion beam is greater than the size of described ion beam,
Distance between described a pair magnetic pole is fixing in the inside of described mass separation magnet,
The direct of travel of the described ion beam generated by described ion source is vertical with the direction in the magnetic field produced in described mass separation magnet, and in described mass separation magnet, be configured with a pair electrostatic deflection electrodes, this a pair electrostatic deflection electrodes makes the direct of travel of described ion beam at the thickness direction upper deflecting of described ion beam, and described thickness direction is vertical with described primary flat.
17. ion implantation apparatuses according to claim 1, it is characterized in that, beam path between described ion source and described mass separation magnet is configured with deflection electromagnet, and this deflection electromagnetism makes the direct of travel of described ion beam at the length direction upper deflecting of described ion beam.
18. ion implantation apparatuses according to claim 1, it is characterized in that, the end being configured in the described magnetic pole of the outlet side of described mass separation magnet be positioned at connect following each point line on, described each point is located in the inside of described mass separation magnet by the track of multiple ion beams of diverse location on the length direction of described ion beam, and each tangent line of the track of described multiple ion beam of drawing from described each point is for being parallel to each other.
19. ion implantation apparatuses according to claim 1, is characterized in that, in the inside of described mass separation magnet, identical by the length of the track of the described ion beam of diverse location on the length direction of described ion beam.
20. ion implantation apparatuses according to claim 1, is characterized in that, the position that the size that described analysis slit is configured in the thickness direction of described ion beam is minimum.
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JPH025346A (en) * 1988-06-15 1990-01-10 Teru Barian Kk Ion implanter and adjustment of ion beam
CN1700402A (en) * 2004-05-14 2005-11-23 日新意旺机械股份公司 Ion implanting apparatus
CN101563750A (en) * 2006-09-29 2009-10-21 瓦里安半导体设备公司 Technique for improved ion beam transport
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