CN102800475B - Vacuum sputtering multilayer metallic electrode disk ceramic capacitor and preparation method thereof - Google Patents
Vacuum sputtering multilayer metallic electrode disk ceramic capacitor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of preparation method of vacuum sputtering multilayer metallic electrode disk ceramic capacitor, it comprises the following steps: (1) prepares ceramic substrate; (2) surface clean oven dry is carried out to ceramic substrate; (3) adopt vacuum sputtering methods at ceramic substrate surface successively splash-proofing sputtering metal internal layer plated film and copper metal outer plated film; (4) external lead wire, insulation encapsulating and test is welded.The present invention produces the multi-layered electrode disk ceramic capacitor based on copper base metal by vacuum multi-layer metal coating technology, operation simplifies, and can not destroy porcelain metastructure, especially adopted multicoating can make the product obtained have good adhesive force, soldering resistance, ensures that electrical property is qualified.
Description
Technical field
The present invention relates to capacitor technology field, particularly relate to disk ceramic capacitor technical field.
Background technology
Disk ceramic capacitor is a kind of important base electronic element, is widely used in the fields such as household electrical appliances, communication, power switch, industrial equipment.
The manufacture of current the type element is by printing silver electrode paste on ceramic chip, after oven dry through silver electrode reduction operation on ceramic chip, form silver electrode, then through after operation welding, encapsulate after produce disk ceramic capacitor.
The advantage of existing silver electrode technology is: technology maturation, is suitable for batch production.
Shortcoming: 1) silver is noble metal, and material cost is high;
2) operation is more;
3) element easily produces silver ion migration when prolonged application, reduces component reliability.
Publication date was 2005 rear October 19, publication number is CN1684210A, the Chinese invention patent application that denomination of invention is " high-voltage disc ceramic capacitor base metal chemical deposition full electrode producing process " discloses the technique preparing electrode with copper base metal or nickel chemical deposition, this technique comprises ceramics preparation, preparation coarsening solution, sensitizing solution, activating solution, reducing solution, crosses liquid, the processes such as ceramics is activated, reduction, copper facing or nickel plating, pendulum, bonding die, abrasive disc, discrete piece, chip select, then through being up to the standards, packing warehouse-in.With base metal in this patent application, if copper or nickel are as electrode material, reduce production cost.This application adopts chemical deposition to prepare electrode, there is complex process, and easily causes porcelain metastructure damaged, affects the defects such as product reliability.
Summary of the invention
The object of the present invention is to provide a kind of reliable disk ceramic capacitor manufacture method newly, can material cost be reduced, and simplify production process.
In order to realize foregoing invention object, present invention employs following technical scheme: a kind of preparation method of vacuum sputtering multilayer metallic electrode disk ceramic capacitor, is characterized in that comprising the following steps:
(1) ceramic substrate is prepared;
(2) surface clean oven dry is carried out to ceramic substrate;
(3) adopt vacuum sputtering methods at ceramic substrate surface successively splash-proofing sputtering metal internal layer plated film and copper metal outer plated film;
(4) external lead wire, insulation encapsulating and test is welded.
Wherein, in step (3), the sputtering thickness of inner metallic layer plated film is 0.01-2 μm, and the sputtering thickness of copper metal outer plated film is 0.10-6 μm.
Preferably, in step (3), the sputtering thickness of inner metallic layer plated film is 0.01-0.1 μm, and the sputtering thickness of copper metal outer plated film is 1-6 μm.
Specifically, the metallic target of described inner metallic layer plated film is the hybrid metal target of base metal and assistant metal, described base metal is selected from the one in Ti, Cr, Al, account for 70 ~ 99.9% of inner metallic layer plating filmed metals target, described assistant metal is selected from the one in Ni or W, accounts for the 0.1%-30% of inner metallic layer plating filmed metals target.
Alternatively, the metallic target of described inner metallic layer plated film is the one in Cr, Al, Ti.
The metallic target of described copper metal outer plated film is Cu.
Alternatively, the metallic target of described copper metal outer plated film is the alloy of Cu and the one kind of metal being selected from Ti, Cr, Al, Ni, W, and wherein in alloy, Cu accounts for 75%-99.9%, and another metal accounts for 0.1%-25%.
Vacuum sputtering multiple layer metal Cu electrode disk ceramic capacitor obtained by above-mentioned either method.
The present invention is mainly by vacuum multi-layer metal coating technology, and produce the multi-layered electrode disk ceramic capacitor based on copper base metal, its principle is to ceramic substrate through the process of vacuum multi-layer metal coating, at ceramic chip two end surface forming electrode.The application uses vacuum sputtering to prepare metal electrode, operation simplifies, porcelain metastructure can not be destroyed, especially multicoating is adopted, namely inner metallic layer plated film is respectively and based on the metal outer plated film of fine copper or copper, make the product obtained have good adhesive force, soldering resistance, ensure that electrical property is qualified.
Compared with prior art, copper electrode of the present invention has following advantage
1. material cost significantly reduces
In existing silver electrode product cost structure, cost accounting in whole manufacturing cost that silver electrode consumes is higher, accounts for whole manufacturing cost on average about 35%, therefore, with material instead of metallic silver such as metallic coppers, just significantly can reduce material cost.
2. production process reduces
Adopt vacuum coating technology, can once complete the shaping of base metal copper electrode, all will eliminate existing printing process and reduction operation after project completes, and simplify operation, shorten the production cycle.
3. the reliability of disk ceramic capacitor improves
Copper, as electrode, can weaken the migration of electrode metal greatly, thus the risk that reduction capacitor product lost efficacy when Long-Time Service.
Accompanying drawing explanation
Fig. 1 is Facad structure schematic diagram of the present invention.
Fig. 2 is side structure schematic diagram of the present invention.
Fig. 3 is process chart of the present invention.
Wherein, 1. encapsulated layer; 2. solder; 3. ceramic dielectric; 4. multiple layer metal copper electrode; 5. external electrode lead-in wire
Embodiment
If no special instructions, the percentage composition in this specification all refers to mass percentage.
Embodiment one
The technological process of production of the present invention as shown in Figure 3.
First, ceramic substrate 3 is prepared: through raw embryo forming, screening dress alms bowl, sintering.The ceramics sintered is cleaned up, after outward appearance selection, is discharged in the special mould of plated film, makes ceramic substrate 3.The structural design of capacitor, first according to the thickness of the voltage withstand class design ceramic substrate of capacitor, then according to capacitance size design copper electrode diameter and ceramic substrate diameter, just can determine capacitor core chip size by the thickness of ceramic substrate 3 and diameter; Finally design corresponding lead format and product size according to the needs of circuit again.
Again, carry out cleaning, drying to ceramic substrate 3, then adopt vacuum sputtering methods to carry out plated film, inner metallic layer plating filmed metals target proportioning is .Ni20%-Cr80%; It is first the inner metallic layer plated film of 0.05 μm by above-mentioned metallic target vacuum sputtering a layer thickness prepared.Adopt vacuum sputtering methods to sputter fine copper metallic target again and obtain copper metal outer plated film, sputtering thickness is 2 μm, obtained multiple layer metal copper electrode 4, electrode namely.
Finally, weld external external electrode lead-in wire 5, i.e. tin plated electronic lead-in wire (CP line) with solder 2, then encapsulated layer 1 is encapsulated to obtain in insulation, finally tests product.
Obtain each group of ceramic capacitor product by above-mentioned formula and step, and carry out electrical property detection respectively to made Y5V, Y5U, Y5P product being, result is as following table 1:
Table 1
| Classification | Y5V | Y5U | Y5P |
| K value | ≥16000 | ≥9000 | ≥1500 |
| Dielectric loss | ≤250×10 -4 | ≤250×10 -4 | ≤250×10 -4 |
| BDV（AC）/MM | ≥3.1KV | ≥3.3KV | ≥3.4KV |
| BDV（DC）/MM | ≥6.1KV | ≥6.3KV | ≥6.7KV |
| Insulation resistance | ≥10GΩ | ≥10GΩ | ≥10GΩ |
| Dielectric loss after tide | ≤250×10 -4 | ≤250×10 -4 | ≤250×10 -4 |
Result is qualified.
Embodiment two
Embodiment two adopts technological process as identical in embodiment one, and difference is that the inner metallic layer plating filmed metals target proportioning adopted is W25%-Al75% alloying metal target, and sputtering thickness is 0.07 μm.Copper metal outer plated film adopts Cr2%-Cu98% metallic target, and sputtering thickness is 2.5 μm.
Obtain each group of ceramic capacitor product by above-mentioned formula and step, and carry out electrical property detection respectively to made Y5V, Y5U, Y5P product being, result is as following table 2:
Table 2
| Classification | Y5V | Y5U | Y5P |
| K value | ≥15500 | ≥9200 | ≥1700 |
| Dielectric loss | ≤230×10 -4 | ≤220×10 -4 | ≤210×10 -4 |
| BDV（AC）/MM | ≥3.2KV | ≥3.1KV | ≥3.3KV |
| BDV（DC）/MM | ≥6.5KV | ≥6.3KV | ≥6.6KV |
| Insulation resistance | ≥10GΩ | ≥10GΩ | ≥10GΩ |
| Dielectric loss after tide | ≤240×10 -4 | ≤220×10 -4 | ≤215×10 -4 |
Result is qualified.
Embodiment three
Embodiment three adopts technological process as identical in embodiment one, and difference is that the inner metallic layer plating filmed metals target adopted is Al metallic target, and sputtering thickness is 0.09 μm.Copper metal outer plated film adopts copper metallic target, and sputtering thickness is 3.5 μm
Obtain each group of ceramic capacitor product by above-mentioned formula and step, and carry out electrical property detection respectively to made Y5V, Y5U, Y5P product being, result is as following table 3:
Table 3
| Classification | Y5V | Y5U | Y5P |
| K value | ≥16300 | ≥9400 | ≥1650 |
| Dielectric loss | ≤220×10 -4 | ≤210×10 -4 | ≤240×10 -4 |
| BDV（AC）/MM | ≥3.2KV | ≥3.4KV | ≥3.1KV |
| BDV（DC）/MM | ≥6.3KV | ≥6.7KV | ≥6.3KV |
| Insulation resistance | ≥10GΩ | ≥10GΩ | ≥10GΩ |
| Dielectric loss after tide | ≤225×10 -4 | ≤200×10 -4 | ≤240×10 -4 |
Result is qualified.
Embodiment four
Embodiment four adopts technological process as identical in embodiment one, and difference is that the inner metallic layer plating filmed metals target adopted is Cr metallic target, and sputtering thickness is 0.04 μm.Copper metal outer plated film adopts Al22%-Cu78% metallic target, and sputtering thickness is 4 μm.
Obtain each group of ceramic capacitor product by above-mentioned formula and step, and carry out electrical property detection respectively to made Y5V, Y5U, Y5P product being, result is as following table 4:
Table 4
| Classification | Y5V | Y5U | Y5P |
| K value | ≥16700 | ≥9500 | ≥1700 |
| Dielectric loss | ≤180×10 -4 | ≤190×10 -4 | ≤200×10 -4 |
| BDV（AC）/MM | ≥3.3KV | ≥3.5KV | ≥3.4KV |
| BDV（DC）/MM | ≥6.7KV | ≥6.9KV | ≥6.9KV |
| Insulation resistance | ≥10GΩ | ≥10GΩ | ≥10GΩ |
| Dielectric loss after tide | ≤175×10 -4 | ≤180×10 -4 | ≤190×10 -4 |
Result is qualified.
Claims (4)
1. a preparation method for vacuum sputtering multilayer metallic electrode disk ceramic capacitor, is characterized in that comprising the following steps:
(1) ceramic substrate is prepared;
(2) surface clean oven dry is carried out to ceramic substrate;
(3) vacuum sputtering methods is adopted to sputter the inner metallic layer plated film of 0.01-0.1 μm and the fine copper metallic target of 2 μm successively as copper metal outer plated film in ceramic substrate surface, the metallic target of described inner metallic layer plated film is the hybrid metal target of base metal and assistant metal, its metallic target proportioning is Ni20%-Cr80%, and sputtering thickness is 0.05 μm;
(4) external lead wire, insulation encapsulating and test is welded.
2. a preparation method for vacuum sputtering multilayer metallic electrode disk ceramic capacitor, is characterized in that comprising the following steps:
(1) ceramic substrate is prepared;
(2) surface clean oven dry is carried out to ceramic substrate;
(3) to sputter thickness be successively the inner metallic layer plated film of 0.01-0.1 μm and thickness is the copper metal outer plated film of 1-6 μm in ceramic substrate surface to adopt vacuum sputtering methods; The metallic target of described inner metallic layer plated film is the hybrid metal target of base metal and assistant metal, and described inner metallic layer plating filmed metals target proportioning is W25%-Al75%, and sputtering thickness is 0.07 μm; Described copper metal outer plated film adopts Cr2%-Cu98% metallic target, and sputtering thickness is 2.5 μm;
(4) external lead wire, insulation encapsulating and test is welded.
3. a preparation method for vacuum sputtering multilayer metallic electrode disk ceramic capacitor, is characterized in that comprising the following steps:
(1) ceramic substrate is prepared;
(2) surface clean oven dry is carried out to ceramic substrate;
(3) to sputter thickness be successively the inner metallic layer plated film of 0.01-0.1 μm and thickness is the copper metal outer plated film of 1-6 μm in ceramic substrate surface to adopt vacuum sputtering methods, described inner metallic layer plating filmed metals target is Cr metallic target, and sputtering thickness is 0.04 μm; Described copper metal outer plated film adopts Al22%-Cu78% metallic target, and sputtering thickness is 4 μm;
(4) external lead wire, insulation encapsulating and test is welded.
4. the vacuum sputtering multilayer metallic electrode disk ceramic capacitor obtained by claims 1 to 3 either method.
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| CN104299738B (en) * | 2014-09-18 | 2017-10-10 | 兴勤（常州）电子有限公司 | A kind of electrodic electron component and preparation method thereof |
| CN109734481B (en) * | 2019-03-18 | 2021-09-21 | 昆山福烨电子有限公司 | Production process of metal ceramic thick film circuit |
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| CN101441937A (en) * | 2008-12-25 | 2009-05-27 | 广东风华高新科技股份有限公司 | Method for manufacturing end electrode of sheet-type capacitor |
| CN201689785U (en) * | 2010-03-17 | 2010-12-29 | 陈妍臻 | Improved ceramic capacitor |
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| JP3391325B2 (en) * | 1999-12-27 | 2003-03-31 | 株式会社村田製作所 | Capacitors |
| JP3446713B2 (en) * | 2000-03-14 | 2003-09-16 | 株式会社村田製作所 | Ceramic electronic components with lead terminals |
| JP3570407B2 (en) * | 2001-10-09 | 2004-09-29 | 住友金属鉱山株式会社 | Electrode film for chip resistor |
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| CN101441937A (en) * | 2008-12-25 | 2009-05-27 | 广东风华高新科技股份有限公司 | Method for manufacturing end electrode of sheet-type capacitor |
| CN201689785U (en) * | 2010-03-17 | 2010-12-29 | 陈妍臻 | Improved ceramic capacitor |
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