CN102790121A - Four-knot solar battery with two-knot germanium sub-batteries and preparation method thereof - Google Patents

Four-knot solar battery with two-knot germanium sub-batteries and preparation method thereof Download PDF

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CN102790121A
CN102790121A CN2012102833186A CN201210283318A CN102790121A CN 102790121 A CN102790121 A CN 102790121A CN 2012102833186 A CN2012102833186 A CN 2012102833186A CN 201210283318 A CN201210283318 A CN 201210283318A CN 102790121 A CN102790121 A CN 102790121A
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CN102790121B (en
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陈松岩
李欣
刘蕊
刘晶晶
孙钦钦
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Xiamen University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention provides a four-knot solar battery with two-knot germanium sub-batteries and a preparation method thereof and relates to a solar battery. The four-knot solar battery is provided with a first knot Ge sub-battery, a second knot Ge sub-battery, a third knot InGaAs sub-battery, a fourth knot InGaP sub-battery and a contact layer, wherein the first knot Ge sub-battery is constructed on a Ge substrate; the Ge substrate is served as a base region of the first knot Ge sub-battery; the second knot Ge sub-battery and the first knot Ge sub-battery are connected through a first tunneling knot; the third knot InGaAs sub-battery and the second knot Ge sub-battery are connected through a second tunneling knot; the fourth knot InGaP sub-battery and the third knot InGaAs sub-battery are connected through a third tunneling knot; and the contact layer is arranged on the fourth knot InGaP sub-battery. A Ge battery is divided into the two-knot germanium sub-batteries which are connected in series, so that the current matching and the lattice matching of the battery are realized, the problem of unmatched current is solved and the open-circuit voltage and the conversion efficiency of the battery are increased.

Description

Has four-junction solar cell of two knot germanium batteries and preparation method thereof
Technical field
The present invention relates to a kind of solar cell, especially relate to a kind of four-junction solar cell and preparation method thereof with two knot germanium batteries.
Background technology
Single junction cell can only absorb the sunlight of special spectrum, and its conversion efficiency is not high.Constitute many knot tandem solar cell with the different semi-conducting material of multiple energy gap; Energy gap according to material leniently from top to bottom is arranged in order to narrow; Can distinguish the solar spectrum that selectivity absorbs and change different-waveband, increase substantially the photoelectric conversion efficiency of solar cell.Theoretical Calculation shows (under the 6000K black body radiation): the limiting efficiency of double-junction solar battery is 42.5%; The limiting efficiency of three-joint solar cell is 48.6%; The limiting efficiency of four-junction solar cell is 52.5% ([1] MartiA; Araujo G.Solar Energy Materials and Solar Cells, 1996,43:2003).
2002, U.S. SPL company utilized unordered GaInP to improve top battery band gap to 1.89eV, and GaInP/InGaAs/Ge three junction battery AM1.5 efficient are brought up to 32%.([2] R.R.King; C.M.Fetzer; Lattice-matched and metamorphic GaInP/GaInAs/Ge concentrator solar cells, Presented at the 3rd World Conference on Photovoltaic Energy Conversion, 2003) however we notice that GaInP/Ga (In) As/Ge three junction battery structures are to guarantee to realize a kind of compromise structure under the lattice Perfect Matchings condition; Its (1.89ev; 1.40ev band gap combination current utmost point 0.66ev) does not match, the electric current of battery is the twice of other two batteries at the bottom of the Ge; Cause the significant wastage of solar spectrum at infrared band, the solar spectrum utilization ratio is not high.
(0.67eV) is on the low side for the band gap of Ge, can not constitute three desirable junction batteries, but can be used as the end battery of desirable four junction batteries.Therefore the key of four junction batteries is to seek the 3rd junction battery material of lattice match and currents match.Have to research and propose and between Ga (In) As and Ge battery, insert the sub-battery that a knot energy gap is about 1.0 ~ 1.1eV and lattice match, constitute four knot cascaded structures and come more effectively to utilize the infrared long wave part of solar spectrum.OLSON etc. find Ga 1-xIn xN yAs (y=0.35x) and GaAs lattice match, when y=3%, its Eg ≈ 1.0eV is the most suitable.But; Because high-quality GaInNAs is difficult to obtain; The minority carrier life time of GaInNAs is short and mobility is very low, makes to be lower than the expection level as the sub-battery current density of the GaInNAs of the third level, unsatisfactory ([3] the Geisz J F of the performance of four junction structures; Friedman D J.III-N-V semiconductors for solar photovoltaic applications [J] .Semicond.Sci.Technol.17,769-777 (2002)).Though the theoretical efficiency of four junction batteries can reach 52.5%, the 3rd desirable knot material does not find so far as yet.
Summary of the invention
The objective of the invention is to not match in order to solve existing three junction battery electric currents; Desirable the 3rd knot material of not high and four junction batteries is difficult to problems such as acquisitions to the solar spectrum utilization ratio, provides a kind of and has two and tie InGaP/InGaAs/Ge/Ge four-junction solar cell of germanium batteries and preparation method thereof.
Said InGaP/InGaAs/Ge/Ge four-junction solar cell with two knot germanium batteries is provided with the first knot Ge battery, the second knot Ge battery, the sub-battery of the 3rd knot InGaAs, the 4th knot battery of InGaP and contact layer;
The said first knot Ge battery is structured on the Ge substrate; The Ge substrate is as the base of the first knot Ge battery; The said second knot Ge battery and first is tied between the Ge battery and is connected by first tunnel junctions; The sub-battery of said the 3rd knot InGaAs and second is tied between the Ge battery and is connected by second tunnel junctions, is connected by the 3rd tunnel junctions between said the 4th sub-battery of knot InGaP and the sub-battery of the 3rd knot InGaAs, and said contact layer is located on the sub-battery of the 4th knot InGaP.
Said first tunnel junctions, second tunnel junctions and the 3rd tunnel junctions all can adopt GaAs, InGaP, Al 0.3Ga 0.7As or other semi-conducting materials, doping content is up to 1 * 10 19Cm -3More than.
Said preparation method with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries comprises the following steps:
1) adopts P type Ge single crystalline substrate, as the base of the first knot Ge battery; Substrate back diffuses to form the back of the body electric field layer of the P type Ge layer of one deck high-dopant concentration as the first knot Ge battery earlier;
2) get into MOCVD or MBE or other epitaxial growth equipments, begin growth, utilize epitaxial device to diffuse out inversion layer at the Ge substrate surface and form n type emitter region, the n type InGaP of growth high-dopant concentration on the emitter region is as the Window layer of the first knot Ge battery;
3) growth connects first tunnel junctions of the first knot Ge battery and the second knot Ge battery: first growing n-type GaAs or InGaP layer; Regrowth p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer forms tunnel junctions;
4) the growth second knot Ge battery: growing p-type InGaP is as the back of the body electric field layer of the second knot Ge battery; Regrowth p type Ge layer; As the base of the second knot Ge battery, growing n-type Ge layer then is as the emitter region of the second knot Ge battery; Last growing n-type InGaP is as the Window layer of the second knot Ge battery;
5) growth connects second tunnel junctions of the second knot Ge battery and the sub-battery of the 3rd knot InGaAs: first growing n-type GaAs or InGaP layer; Regrowth p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer forms tunnel junctions;
6) the sub-battery of growth regulation three knot InGaAs: the p type back of the body electric field layer of growth high-dopant concentration; Regrowth p type InGaAs layer is as the base of the sub-battery of the 3rd knot InGaAs; Growing n-type InGaAs layer then is as the emitter region of the sub-battery of the 3rd knot InGaAs; Grow the at last n type Window layer of high-dopant concentration;
7) growth connects the 3rd tunnel junctions of the 3rd knot battery of InGaAs and the sub-battery of the 4th knot InGaP: first growing n-type InGaP layer; Regrowth p type Al 0.3Ga 0.7The As layer forms tunnel junctions;
8) the sub-battery of growth regulation four knot InGaP: the p type back of the body electric field layer of growth high-dopant concentration; Regrowth p type InGaP layer is as the base of the sub-battery of the 4th knot InGaP; Growing n-type InGaP layer then is as the emitter region of the sub-battery of the 4th knot InGaP; Preferably grow high-dopant concentration n type AlInP layer, as the 4th the knot InGaP 2The Window layer of sub-battery;
9) growth ohmic contact layer: the n type GaAs cap of growth high-dopant concentration is as ohmic contact layer;
10) deposition antireflective film, photoetching, preparation electrode and follow-up battery chip are made, and must have the InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries.
In step 1), the thickness of said P type Ge single crystalline substrate can be 50～500 μ m, and doping content can be 1 * 10 16~ 1 * 10 18Cm -3
In step 2) in, the thickness of said n type emitter region can be 0.05～1 μ m, and doping content can be 1 * 10 18~ 5 * 10 19Cm -3The thickness of the n type InGaP of said high-dopant concentration can be 0.05～0.5 μ m.
In step 3), said n type GaAs or InGaP layer be thick be 0.005～0.025 μ m, the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs or InGaP layer; Said p type GaAs or Al 0.3Ga 0.7As or InGaP 2The layer be thick be 0.005 ~ 0.025 μ m, the degeneracy doping content is up to 5 * 10 19Cm -3Above p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer.
In step 4), said p type InGaP is that thickness is 0.05～0.5 μ m, the p type InGaP of high-dopant concentration; Said p type Ge layer is that thickness is 0.5 ~ 0.7 μ m, and doping content is 1 * 10 16~ 1 * 10 18Cm -3P type Ge layer; Said n type Ge layer is that thickness is 0.05 ~ 0.2 μ m, and doping content is 1 * 10 18~ 5 * 10 19Cm -3N type Ge layer; Said n type InGaP is that thickness is 0.05 ~ 0.5 μ m, the n type InGaP of high-dopant concentration.
In step 5), said n type GaAs or InGaP layer are that thickness is 0.005 ~ 0.025 μ m, and the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs or InGaP layer; Said p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer is that thickness is 0.005～0.025 μ m, and the degeneracy doping content is up to 5 * 10 19Cm -3Above p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer.
In step 6), the In component among the InGaAs of the sub-battery of said the 3rd knot InGaAs is preferably 0 ~ 0.015, and preferred value is 0.01; Said p type InGaAs layer is that thickness is 2.5 ~ 3.5 μ m, and doping content is 5 * 10 16~ 5 * 10 17Cm -3P type InGaAs layer; Said n type InGaAs layer is that thickness is 0.1～0.3 μ m, and doping content is 5 * 10 17-5 * 10 18Cm -3N type InGaAs layer.
In step 7), said n type InGaP layer is that thickness is 0.005 ~ 0.025 μ m, and the degeneracy doping content is up to 1 * 10 19Cm -3Above n type InGaP layer; Said p type Al 0.3Ga 0.7The As layer is that thickness is 0.005～0.025 μ m, and the degeneracy doping content is up to 5 * 10 19Cm -3Above p type Al 0.3Ga 0.7The As layer.
In step 8), the InGaP in the sub-battery of said the 4th knot InGaP 2Energy gap can be 1.85 ~ 1.9eV; Said p type InGaP layer is that thickness is 0.6 ~ 0.8 μ m, and doping content is 5 * 10 16~ 5 * 10 17Cm -3P type InGaP layer; Said n type InGaP layer is that thickness is 0.1 ~ 0.3 μ m, and doping content is 5 * 10 17~ 5 * 10 18Cm -3N type InGaP layer.
The present invention divides the Ge battery on the Ge battery of doing two knot series connection; With respect to present widely used InGaP/InGaAs/Ge three junction batteries; Not only solve the unmatched problem of electric current well, also effectively improved the open circuit voltage of battery, can further improve the conversion efficiency of battery; And, solved the problem that the GaInAsN material is difficult to obtain well with respect to four junction batteries of the InGaP/InGaAs/GaInAsN/Ge in the ideal; In addition, it utilizes ripe MOCVD epitaxy technique, and the preparation method is simple, no matter is space or ground, all has broad application prospects.
Structure of the present invention mainly comprises: the tunnel junctions that is structured in the knot of first on Ge substrate Ge battery, the epitaxially grown second knot Ge battery, the sub-battery of the 3rd knot InGaAs, the 4th knot battery of InGaP and connects each sub-battery.The Ge battery divides the Ge battery of doing two knot series connection, can realize currents match between each sub-battery; Each sub-battery and between tunnel junctions all realize lattice match with substrate.
The said first knot Ge battery is structured on the Ge substrate, and the Ge substrate is as the base of the first knot Ge battery, and doping content is 10 16Cm -3~ 10 18Cm -3The Ge substrate back can spread one deck earlier and have the back of the body electric field layer of the high-dopant concentration Ge layer of identical doping type as the first knot Ge battery with substrate; The emitter region diffuses out inversion layer through epitaxial device at the Ge substrate surface and obtains, and emitter region thickness is 0.05 ~ 1 μ m, and doping content is 1 * 10 18～5 * 10 19Cm -3The InGaP of growth high-dopant concentration on the emitter region is as the Window layer of the first knot Ge battery.
All growing between said each sub-battery has tunnel junctions, and tunnel junctions can adopt GaAs, InGaP, Al 0.3Ga 0.7As or other semi-conducting materials, doping content is up to 1 * 10 19Cm -3More than.
The said second knot Ge battery comprises from bottom to top: back of the body electric field layer, Ge base, Ge emitter region and Window layer.For realizing the currents match of battery, the thickness of Ge base is 0.5 ~ 0.7 μ m, and doping content is 1 * 10 16~ 1 * 10 18Cm -3The thickness of Ge emitter region is 0.05 ~ 0.2 μ m, and doping content is 1 * 10 18~ 5 * 10 19Cm -3
The sub-battery of said the 3rd knot InGaAs comprises from bottom to top: back of the body electric field layer, InGaAs base, InGaAs emitter region and Window layer.In component among the InGaAs is preferably 0 ~ 0.015, and the figure of merit is 0.01.
The sub-battery of said the 4th knot InGaP comprises from bottom to top: back of the body electric field layer, InGaP base, InGaP emitter region and Window layer.The energy gap of the sub-battery of InGaP is more preferably greater than 1.85eV.
Said each sub-battery and between tunnel junctions utilize the outer equipment that grinds of MBE system of MOCVD system or other directly on the Ge substrate, to grow and form.
The present invention divides the Ge battery of doing two knot series connection with the Ge battery, can realize currents match between each sub-battery; Each sub-battery and between tunnel junctions all realize lattice match with substrate.With respect to present widely used InGaP/InGaAs/Ge three junction batteries, not only solved the unmatched problem of electric current well, also effectively improved the open circuit voltage of battery, can further improve the conversion efficiency of battery; And, solved the problem that the GaInAsN material is difficult to obtain well with respect to four junction batteries of the InGaP/InGaAs/GaInAsN/Ge in the ideal; In addition, it utilizes ripe MOCVD epitaxy technique, and the preparation method is simple, no matter is space or ground, all has broad application prospects.
Description of drawings
Fig. 1 has the structural representation of the InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries for the present invention.In Fig. 1, respectively be labeled as: 1, the first knot Ge battery; 2, first tunnel junctions; 3, the second knot Ge battery; 4, second tunnel junctions; 5, the sub-battery of the 3rd knot InGaAs; 6, the 3rd tunnel junctions; 7, the sub-battery of the 4th knot InGaP; 8, contact layer.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
Referring to Fig. 1, said InGaP/InGaAs/Ge/Ge four-junction solar cell embodiment with two knot germanium batteries is provided with the sub-battery of the first knot Ge battery 1, the second knot Ge battery 3, the 3rd knot InGaAs 5, the 4th knot battery 7 of InGaP and contact layer 8.The said first knot Ge battery 1 is structured on the Ge substrate; The Ge substrate is as the base of the first knot Ge battery 1; The said second knot Ge battery 3 and first is tied between the Ge battery 1 and is connected by first tunnel junctions 2; The sub-battery 5 of said the 3rd knot InGaAs and second is tied between the Ge battery 3 and is connected by second tunnel junctions 4, is connected by the 3rd tunnel junctions 6 between said the 4th sub-battery 7 of knot InGaP and the sub-battery 5 of the 3rd knot InGaAs, and said contact layer 8 is located on the sub-battery 7 of the 4th knot InGaP.
Said first tunnel junctions 2, second tunnel junctions 4 and the 3rd tunnel junctions 6 all can adopt GaAs, InGaP, Al 0.3Ga 0.7As or other semi-conducting materials, doping content is up to 1 * 10 19Cm -3More than.
Below provide the preparation method of InGaP/InGaAs/Ge/Ge four-junction solar cell with two knot germanium batteries:
(1) adopt P type Ge substrate, thickness is 150 μ m, and doping content is 5 * 10 17Cm -3, as the base of the first knot Ge battery; It is 5 * 10 that substrate back can diffuse to form one deck doping content earlier 18P type Ge layer as the back of the body electric field layer of the first knot Ge battery.
(2) get into the MOCVD growth, utilize the MOCVD method to diffuse out inversion layer at the Ge substrate surface and obtain n type emitter region, emitter region thickness is 0.15 μ m, and doping content is 1 * 10 19Cm -3Grow thick 0.2 μ m on the emitter region, doping content is 1 * 10 18Cm -3N type InGaP, as the Window layer of battery at the bottom of the Ge.
(3) growth connects first tunnel junctions of the first knot Ge battery and the second knot Ge battery: first grow thick 0.015 μ m, the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs layer; The thick 0.015 μ m of regrowth, the degeneracy doping content is up to 5 * 10 19Cm -3Above p type GaAs layer forms tunnel junctions.
(4) the growth second knot Ge battery: growth thickness is 0.07 μ m, and doping content is 5 * 10 18Cm -3P type InGaP as the back of the body electric field layer of the second knot Ge battery; Growth thickness is 0.6 μ m, and doping content is 5 * 10 17Cm -3P type Ge layer, as the base of the second knot Ge battery; Growth thickness is 0.1 μ m, and doping content is 1 * 10 19Cm -3N type Ge layer, as the emitter region of the second knot Ge battery; Grow thick 0.2 μ m, doping content is 1 * 10 18Cm -3N type InGaP, as the Window layer of battery at the bottom of the Ge.
(5) growth connects second tunnel junctions of the second knot Ge battery and the sub-battery of the 3rd knot InGaAs: first grow thick 0.015 μ m, the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs layer, the thick 0.015 μ m of regrowth, the degeneracy doping content is up to 1 * 10 19Cm -3Above p type GaAs layer forms tunnel junctions.
(6) growth regulation three knot In 0.01Ga 0.99As battery: growth thickness is 0.07 μ m, and doping content is 5 * 10 18Cm -3P type InGaP as the 3rd the knot In 0.01Ga 0.99The back of the body electric field layer of As battery; Growth thickness is 3 μ m, and doping content is 2 * 10 17Cm -3P type In 0.01Ga 0.99The As layer is as the 3rd knot In 0.01Ga 0.99The base of As battery; Growth thickness is 0.1 μ m, and doping content is 1 * 10 18Cm -3N type In 0.01Ga 0.99The As layer is as the 3rd knot In 0.01Ga 0.99The emitter region of As battery; Grow thick 0.1 μ m, doping content is 1 * 10 18Cm -3N type InGaP, as the 3rd the knot In 0.01Ga 0.99The Window layer of As battery.
(7) growth connects the 3rd knot In 0.01Ga 0.99The 3rd tunnel junctions of As battery and the sub-battery of the 4th knot InGaP: first grow thick 0.015 μ m, the degeneracy doping content is up to 1 * 10 19Cm -3Above n type InGaP layer, the thick 0.015 μ m of regrowth, the degeneracy doping content is up to 5 * 10 19Cm -3Above p type Al 0.3Ga 0.7The As layer forms tunnel junctions.
(8) growth regulation four knot InGaP 2Sub-battery: InGaP wherein 2Energy gap be 1.85 ~ 1.9eV, growth thickness is 0.07 μ m, doping content is 1 * 10 18Cm -3P type InGaP as the 4th the knot InGaP 2The back of the body electric field layer of sub-battery; Growth thickness is 0.7 μ m, and doping content is 1 * 10 17Cm -3P type InGaP 2Layer is as the 4th knot InGaP 2The base of sub-battery; Growth thickness is 0.1 μ m, and doping content is 1 * 10 18Cm -3N type InGaP 2Layer is as the 4th knot InGaP 2The emitter region of sub-battery; Grow thick 0.05 μ m, doping content is 5 * 10 18Cm -3N type AlInP layer, as the 4th the knot InGaP 2The Window layer of sub-battery.
(9) growth ohmic contact layer: growth thickness is 0.5 μ m, and doping content is 5 * 10 18Cm -3N type GaAs cap as ohmic contact layer.
(10) deposition antireflective film, photoetching, preparation electrode and follow-up battery chip are made.

Claims (10)

1. the InGaP/InGaAs/Ge/Ge four-junction solar cell that has two knot germanium batteries is characterized in that being provided with the first knot Ge battery, the second knot Ge battery, the sub-battery of the 3rd knot InGaAs, the 4th knot battery of InGaP and contact layer;
The said first knot Ge battery is structured on the Ge substrate; The Ge substrate is as the base of the first knot Ge battery; The said second knot Ge battery and first is tied between the Ge battery and is connected by first tunnel junctions; The sub-battery of said the 3rd knot InGaAs and second is tied between the Ge battery and is connected by second tunnel junctions, is connected by the 3rd tunnel junctions between said the 4th sub-battery of knot InGaP and the sub-battery of the 3rd knot InGaAs, and said contact layer is located on the sub-battery of the 4th knot InGaP.
2. the InGaP/InGaAs/Ge/Ge four-junction solar cell with two knot germanium batteries as claimed in claim 1 is characterized in that said first tunnel junctions, second tunnel junctions and the 3rd tunnel junctions all adopt GaAs, InGaP, Al 0.3Ga 0.7As or other semi-conducting materials, doping content is up to 1 * 10 19Cm -3More than.
3. have the preparation method of the InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries according to claim 1, it is characterized in that comprising the following steps:
1) adopts P type Ge single crystalline substrate, as the base of the first knot Ge battery; Substrate back diffuses to form the back of the body electric field layer of the P type Ge layer of one deck high-dopant concentration as the first knot Ge battery earlier;
2) get into MOCVD or MBE or other epitaxial growth equipments, begin growth, utilize epitaxial device to diffuse out inversion layer at the Ge substrate surface and form n type emitter region, the n type InGaP of growth high-dopant concentration on the emitter region is as the Window layer of the first knot Ge battery;
3) growth connects first tunnel junctions of the first knot Ge battery and the second knot Ge battery: first growing n-type GaAs or InGaP layer; Regrowth p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer forms tunnel junctions;
4) the growth second knot Ge battery: growing p-type InGaP is as the back of the body electric field layer of the second knot Ge battery; Regrowth p type Ge layer; As the base of the second knot Ge battery, growing n-type Ge layer then is as the emitter region of the second knot Ge battery; Last growing n-type InGaP is as the Window layer of the second knot Ge battery;
5) growth connects second tunnel junctions of the second knot Ge battery and the sub-battery of the 3rd knot InGaAs: first growing n-type GaAs or InGaP layer; Regrowth p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer forms tunnel junctions;
6) the sub-battery of growth regulation three knot InGaAs: the p type back of the body electric field layer of growth high-dopant concentration; Regrowth p type InGaAs layer is as the base of the sub-battery of the 3rd knot InGaAs; Growing n-type InGaAs layer then is as the emitter region of the sub-battery of the 3rd knot InGaAs; Grow the at last n type Window layer of high-dopant concentration;
7) growth connects the 3rd tunnel junctions of the 3rd knot battery of InGaAs and the sub-battery of the 4th knot InGaP: first growing n-type InGaP layer; Regrowth p type Al 0.3Ga 0.7The As layer forms tunnel junctions;
8) the sub-battery of growth regulation four knot InGaP: the p type back of the body electric field layer of growth high-dopant concentration; Regrowth p type InGaP layer is as the base of the sub-battery of the 4th knot InGaP; Growing n-type InGaP layer then is as the emitter region of the sub-battery of the 4th knot InGaP; The growth high-dopant concentration n type AlInP layer, as the 4th the knot InGaP 2The Window layer of sub-battery;
9) growth ohmic contact layer: the n type GaAs cap of growth high-dopant concentration is as ohmic contact layer;
10) deposition antireflective film, photoetching, preparation electrode and follow-up battery chip are made, and must have the InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries.
4. like the said preparation method with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries of claim 3, it is characterized in that in step 1) the thickness of said P type Ge single crystalline substrate is 50～500 μ m, doping content is 1 * 10 16~ 1 * 10 18Cm -3
5. like the said preparation method of claim 3, it is characterized in that in step 2 with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries) in, the thickness of said n type emitter region is 0.05～1 μ m, doping content is 1 * 10 18~ 5 * 10 19Cm -3The thickness of the n type InGaP of said high-dopant concentration is 0.05～0.5 μ m.
6. like the said preparation method of claim 3 with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries; It is characterized in that in step 3); Said n type GaAs or InGaP layer are that thickness is 0.005～0.025 μ m, and the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs or InGaP layer; Said p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer is that thickness is 0.005 ~ 0.025 μ m, and the degeneracy doping content is up to 5 * 10 19Cm -3Above p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer.
7. like the said preparation method of claim 3, it is characterized in that in step 4) said p type InGaP is that thickness is 0.05～0.5 μ m, the p type InGaP of high-dopant concentration with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries; Said p type Ge layer is that thickness is 0.5 ~ 0.7 μ m, and doping content is 1 * 10 16~ 1 * 10 18Cm -3P type Ge layer; Said n type Ge layer is that thickness is 0.05 ~ 0.2 μ m, and doping content is 1 * 10 18~ 5 * 10 19Cm -3N type Ge layer; Said n type InGaP is that thickness is 0.05 ~ 0.5 μ m, the n type InGaP of high-dopant concentration.
8. like the said preparation method of claim 3 with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries; It is characterized in that in step 5); Said n type GaAs or InGaP layer are that thickness is 0.005 ~ 0.025 μ m, and the degeneracy doping content is up to 1 * 10 19Cm -3Above n type GaAs or InGaP layer; Said p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer is that thickness is 0.005～0.025 μ m, and the degeneracy doping content is up to 5 * 10 19Cm -3Above p type GaAs or Al 0.3Ga 0.7As or InGaP 2Layer.
9. like the said preparation method of claim 3 with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries; It is characterized in that in step 6); In component among the InGaAs of the sub-battery of said the 3rd knot InGaAs is 0 ~ 0.015, and preferred value is 0.01; Said p type InGaAs layer is that thickness is 2.5 ~ 3.5 μ m, and doping content is 5 * 10 16~ 5 * 10 17Cm -3P type InGaAs layer; Said n type InGaAs layer is that thickness is 0.1～0.3 μ m, and doping content is 5 * 10 17-5 * 10 18Cm -3N type InGaAs layer.
10. like the said preparation method with InGaP/InGaAs/Ge/Ge four-junction solar cell of two knot germanium batteries of claim 3, it is characterized in that in step 7) said n type InGaP layer is that thickness is 0.005 ~ 0.025 μ m, the degeneracy doping content is up to 1 * 10 19Cm -3Above n type InGaP layer; Said p type Al 0.3Ga 0.7The As layer is that thickness is 0.005～0.025 μ m, and the degeneracy doping content is up to 5 * 10 19Cm -3Above p type Al 0.3Ga 0.7The As layer;
In step 8), the InGaP in the sub-battery of said the 4th knot InGaP 2Energy gap can be 1.85 ~ 1.9eV; Said p type InGaP layer is that thickness is 0.6 ~ 0.8 μ m, and doping content is 5 * 10 16~ 5 * 10 17Cm -3P type InGaP layer; Said n type InGaP layer is that thickness is 0.1 ~ 0.3 μ m, and doping content is 5 * 10 17~ 5 * 10 18Cm -3N type InGaP layer.
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US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
US20040200523A1 (en) * 2003-04-14 2004-10-14 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
CN101882644A (en) * 2009-05-08 2010-11-10 安科太阳能公司 Multijunction solar cells with group IV/III-V hybrid alloys

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
US20040200523A1 (en) * 2003-04-14 2004-10-14 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
CN101882644A (en) * 2009-05-08 2010-11-10 安科太阳能公司 Multijunction solar cells with group IV/III-V hybrid alloys

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