CN102779897A - Method for preparing selective emitter through manner of one-time diffusion - Google Patents
Method for preparing selective emitter through manner of one-time diffusion Download PDFInfo
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- CN102779897A CN102779897A CN2012101585579A CN201210158557A CN102779897A CN 102779897 A CN102779897 A CN 102779897A CN 2012101585579 A CN2012101585579 A CN 2012101585579A CN 201210158557 A CN201210158557 A CN 201210158557A CN 102779897 A CN102779897 A CN 102779897A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- 239000010453 quartz Substances 0.000 claims description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 66
- 230000000694 effects Effects 0.000 claims description 40
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 32
- 229910019213 POCl3 Inorganic materials 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000002360 preparation method Methods 0.000 abstract description 13
- 238000007639 printing Methods 0.000 abstract description 5
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 239000012467 final product Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing a selective emitter through the manner of one-time diffusion, which includes the following steps of: 1, loading a silicon wafer; 2, diffusing; 3, testing the wafer; and 4, unloading the wafer. According to the method disclosed by the invention, a movable selective diffusion template or a fixed selective diffusion template is adopted in the diffusion process to selectively cover the silicon wafer, so that the place on the silicon wafer for printing grid lines is exposed in the diffusion atmosphere while other parts of the wafer are covered; and a deep diffusion zone and a shallow diffusion zone are respectively formed after the diffusion process and a selective emitter is directly formed. The method solves the problems that in the prior art the conventional method for manufacturing the selective emitter is high in cost and complex in preparation process and is hard to realize mass production. The method disclosed by the invention is simple in preparation process and strong in operability and is suitable for mass production, the preparation process is greatly simplified, and the preparation cost is reduced.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, especially relate to the method that a kind of disposable diffusion prepares selective emitter.
Background technology
The developing direction of solar cell is low-cost, high efficiency; And selective emitting electrode structure is to be hopeful to realize one of high efficiency method in the P-N crystalline solid manufacture of solar cells technology, and selective emitter has two characteristics: 1) under grid line and near the highly doped dark diffusion region of formation; 2) form low-doped shallow diffusion region in other zones; It is compound that such structure can reduce diffusion layer; Improve the short wave response of light thus; The contact resistance of metal electrode and silicon makes that short circuit current, open circuit voltage and fill factor, curve factor are all improved preferably before reducing simultaneously, thereby improves conversion efficiency.
The method of making at present selective emitter has a lot, for example, and one Chinese patent application publication No.: CN101794845A, Shen Qing Publication day: on August 4th, 2010, disclose the method for preparing selective emitter by one-time diffusion.It has following processing step successively: earlier with silicon chip making herbs into wool; Then evenly heavily spread; The diffusion back is at silicon chip surface cvd nitride silicon thin film; The nonmetal electrode district that then the corrosivity slurry is imprinted on silicon chip to be to etch away the silicon nitride film at this place, and the silicon that erodes nonmetal electrode district with acid solution or aqueous slkali at last obtains shallow diffusion region, the electrode district diffusion region of promptly attaching most importance to.Its weak point is; The method needs earlier heavily diffusion, and then at silicon chip surface cvd nitride silicon thin film, the nonmetal electrode district that is imprinted on silicon chip with the corrosivity slurry again is to etch away the silicon nitride film at this place; The silicon that erodes nonmetal electrode district with acid solution or aqueous slkali at last obtains shallow diffusion region; Just can obtain the selectivity emission electrode through once spreading twice corrosion, not only complicated process of preparation, and cost is also very high.
In addition; One Chinese patent application publication No.: CN102332492A; January 25 2012 Shen Qing Publication day, disclose a kind of under the positive electrode grid line and near heavy doping, the preparation method of lightly doped selective emitter solar battery is carried out in the position between electrode.Process: in electrode slurry, mix high concentration phosphorus slurry → electrode grid wire silk screen printing high concentration phosphorus slurry back when printing electrode and in POCl3 atmosphere, spread → rapid diffusion and conventional combining of spreading.Its weak point is, this method is through the slurry in the phosphorous source method through silk screen printing being printed onto silicon chip surface, realizing the selectivity diffusion through High temperature diffusion; Because the volatilization down of the organic substance high temperature in the slurry; Can stablize diffusion technology and cause certain influence, diffusion uniformity is difficult to control, in addition in the rapid diffusion of short time; The high concentration phosphorus slurry tends to have little time the volatilization deposition, causes diffusion effect relatively poor.
In addition, also has the laser doping method in addition, returns the preparation method of selective emitter such as method at quarter, but above method all has the cost height, make complicated, the shortcoming that the volume production difficulty is bigger.
Summary of the invention
The present invention is in order to overcome the method cost height for preparing selective emitter of prior art; Make complicacy, the deficiency that the volume production difficulty is bigger provides a kind of preparation technology simple; Low cost of manufacture, the disposable diffusion that can produce in batches prepares the method for selective emitter.
To achieve these goals, the present invention adopts following technical scheme:
A kind of disposable diffusion prepares the method for selective emitter, and described method may further comprise the steps:
(1) load: silicon chip and activity selectivity diffusion template applying back are inserted the draw-in groove on the split type quartz boat; Or silicon chip inserted separately the draw-in groove that has on the integral type quartz boat that fixing selectivity spreads template; Said activity selectivity spreads template and fixedly is equipped with hollow slots on the selectivity diffusion template, and the shape of said hollow slots is identical with the grid line printed patterns in silicon chip front.Activity selectivity diffusion template or fixedly be equipped with on the selectivity diffusion template and the identical hollow slots of grid line printed patterns that silicon chip is positive, activity selectivity diffusion template or fixedly selectivity diffusion template and silicon chip fit when inserting draw-in groove on split type quartz boat or the integral type quartz boat respectively and spreading because the grid line printed patterns in hollow slots and silicon chip front is identical; The printing position of silicon chip front gate line is directly exposed in the diffusion atmosphere,, during diffusion the grid line printing position down and near zone when diffusion, carry out heavy doping; Thereby form dark diffusion region, and other position on the silicon chip by activity selectivity diffusion template or fixedly on the selectivity diffusion template not the part of hollow out cover, cause spreading atmosphere can't get into; Carry out light dope during diffusion, thereby form shallow diffusion region, through activity selectivity diffusion template or the fixedly coverage of selectivity diffusion template; Can direct disposable preparation selective emitter, compared with prior art, need not earlier heavily diffusion; Then at silicon chip surface cvd nitride silicon thin film; The nonmetal electrode district that is imprinted on silicon chip with the corrosivity slurry is again used acid corrosion at last to etch away the silicon nitride film at this place, also need not to print earlier the phosphorus slurry; Carry out the secondary diffusion again; The present invention only need once be spread just can make selective emitter, has not only simplified the processing step of diffusion greatly, operates also more convenient; Preparation cost is also lower, also is fit to produce in enormous quantities.
(2) diffusion: adopt POCl3 liquid source diffusion method to spread, POCl3 liquid source temperature is 20 ℃.POCl3 liquid source diffusion method production efficiency is high, and the PN junction that obtains is even, smooth, and the diffusion layer surface is good.
(3) survey sheet: randomly draw some silicon chips and adopt the resistance test of the four probe method side of carrying out.Randomly draw the resistance test of some silicon chips side of carrying out, so that select electrode printing slurry based on side's resistance.
(4) unload sheet.
As preferably, in the step (), insert the draw-in groove on the split type quartz boat simultaneously after a slice silicon chip and a slice activity selectivity diffusion template fitted, the width of said draw-in groove is the thickness sum that single silicon chip and monolithic activity selectivity spread template.This split type quartz boat overall structure is identical with common quartz boat; Its main distinction point is: the draw-in groove width on the split type quartz boat is different with the draw-in groove width of common quartz boat; Because the draw-in groove on this split type quartz boat need hold a slice silicon chip and a slice activity selectivity diffusion template simultaneously; Therefore the width of draw-in groove equals the thickness sum of a slice silicon chip and a slice activity selectivity diffusion template; To guarantee that silicon chip and activity selectivity diffusion template can keep fitting tightly, and can not shake good stability; A slice silicon chip and a slice activity selectivity diffusion template is inserted draw-in groove on the split type quartz boat to carry out two-sided diffusion, and wherein silicon chip and the activity selectivity diffusion template one side of fitting is carried out selectivity and is spread.
As preferably; In the step (); The wafer chuck of being fitted each other in two back sides inserts the draw-in groove on the split type quartz boat simultaneously after between two activity selectivity diffusion templates, the width of said draw-in groove is the thickness sum of two silicon chips and two activity selectivity diffusion templates.Because the draw-in groove on this split type quartz boat need hold two silicon chips and two activity selectivity diffusion templates simultaneously; Therefore the width of draw-in groove equals the thickness sum of two silicon chips and two activity selectivity diffusion templates; To guarantee that silicon chip and activity selectivity diffusion template can keep fitting tightly; Can not shake; Good stability, the draw-in groove of wafer chuck on insertion split type quartz boat in back between two activity selectivity diffusion templates of being fitted each other in two back sides spreads to carry out the single face selectivity.
As preferably, the thickness of said activity selectivity diffusion template is 0.6 ~ 1.2mm.The length of split type quartz boat is certain, and activity selectivity diffusion template is thick more, and then the required width of draw-in groove is also big more; The draw-in groove quantity that can be provided with on the split type quartz boat is then few more, can influence production capacity like this, and movable diffusion template is thin more; Then intensity is low more under hot conditions; The thickness of activity selectivity diffusion template is 0.6 ~ 1.2mm, can proof strength, can guarantee production capacity again.
As preferably, in the step (), a slice silicon chip directly inserted to have the fixedly draw-in groove on the integral type quartz boat of selectivity diffusion template of a slice, said fixedly selectivity spreads template and is positioned at draw-in groove one side, and the width of said draw-in groove is the thickness of single silicon chip.Draw-in groove one side of this integral type quartz boat is provided with fixedly selectivity diffusion template; Because draw-in groove only need hold a slice silicon chip, so the draw-in groove width is the thickness of single silicon chip, makes silicon chip can keep fitting tightly with fixing selectivity diffusion template; Can not shake; Good stability, and make diffusion effect more even, in addition; Only needing when load that directly silicon chip is inserted draw-in groove gets final product with fixing selectivity diffusion template applying; It is more time saving and energy saving to operate, and a slice silicon chip is directly inserted have a slice fixedly the draw-in groove on the integral type quartz boat of selectivity diffusion template is to carry out two-sided diffusion, and wherein silicon chip carries out selectivity with the fixing one side of selectivity diffusion template applying and spreads.
As preferably; In the step (); The silicon chip of being fitted each other in two back sides directly inserts and has two fixedly draw-in grooves on the integral type quartz boat of selectivity diffusion template, and said fixedly selectivity diffusion template lays respectively at the draw-in groove both sides, and the width of said draw-in groove is the thickness sum of two silicon chips.This integral type quartz boat is equipped with fixedly selectivity diffusion template in the draw-in groove both sides; Because draw-in groove need hold two silicon chips, so the draw-in groove width is two silicon wafer thickness sums, can keep fitting tightly with fixing selectivity diffusion template to guarantee silicon chip; Can not shake; Good stability, in addition, the silicon chip that when load, only needs directly to be fitted each other in two back sides directly inserts draw-in groove and gets final product with fixing selectivity diffusion template applying; It is more time saving and energy saving to operate, the silicon chip of being fitted each other in two back sides directly insert have two fixedly the draw-in groove on the integral type quartz boat of selectivity diffusion template to carry out the diffusion of single face selectivity.
As preferably, the thickness of said fixedly selectivity diffusion template is 0.6 ~ 1.2mm.The length of integral type quartz boat is certain, and fixedly selectivity diffusion template is thick more, and the draw-in groove quantity that then can be provided with on the integral type quartz boat is few more; Can influence production capacity like this; Movable diffusion template is thin more, and then intensity is low more under hot conditions, and fixedly the thickness of selectivity diffusion template is 0.6 ~ 1.2mm; Can proof strength, can guarantee production capacity again.
As preferably, diffusion may further comprise the steps in the step (two)
(1) advance boat: feeding flow in the diffusion furnace is the big N of 15 ~ 20L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 800 ~ 810 ℃, split type quartz boat that is inserted with silicon chip or integral type quartz boat are pushed in the diffusion furnace, advancing the boat time is 15 ~ 20min.
(2) rise again: regulate big N
2Flow to 25 ~ 30L/min makes the interior temperature of stove rise to and be stabilized in 840 ~ 850 ℃.
(3) pre-oxidation: feeding flow is the O of 4 ~ 10L/min
2Form SiO at silicon face
2, make phosphorous diffusion more even.
(4) TongYuan: treat O
2After feeding 1 ~ 3min, regulate big N
2Flow to 20 ~ 25L/min, feeding simultaneously through POCl3 liquid source and flow is the little N of 2 ~ 4L/min
2During diffusion, big N
2As diluent gas, little N
2Get into body through the POCl3 liquid source to carry POCl3.
(5) nitrogen drives in: treat little N
2After feeding 15 ~ 20min, close O
2With little N
2, continue to feed big N
2Nitrogen drives in and makes phosphorus to the silicon chip diffusion inside, reduces surface concentration simultaneously.
(6) oxygen drives in: treat big N
2After feeding 10 ~ 20min again, close big N
2, feeding flow is the O of 4 ~ 10 L/min
2When spreading with POCl3, POCl3 can at high temperature be decomposed into P
2O
5And PCl
5And PCl
5Be not labile, and the meeting corrosion of silicon, aerating oxygen is to make PCl
5Generate P with oxygen reaction
2O
5And chlorine, and the reaction of diffusion mainly is exactly the P that is deposited on silicon chip surface
2O
5Generate SiO with the silicon chip reaction
2With the P atom, the P atom spreads in silicon chip then, and aerating oxygen can impel PCl
5Fully decompose, avoid PCl
5Corrosion to silicon chip surface.
(7) cooling: treat O
2After feeding 8 ~ 15min, close O
2, feeding flow again is the big N of 25 ~ 30 L/min
2, when treating that temperature is reduced to 800 ~ 810 ℃ in the stove, close big N
2
(8) go out boat: quartz boat is retreated to fire door, and moving back the boat time is 15 ~ 20min, when treating that temperature is reduced to 750 ~ 780 ℃ in the stove, quartz boat is taken out cooling in diffusion furnace.
As preferably, heating rate is 2 ~ 3 ℃/min in the step (2).
As preferably, heating rate is 2 ~ 3 ℃/min in the step (2).
Therefore, the present invention has following beneficial effect:
(1) preparation technology is simple, and is workable;
(2) simplify preparation technology greatly, reduced preparation cost;
(3) be fit to produce in enormous quantities.
Description of drawings
Fig. 1 is a kind of result of use figure of split type quartz boat among the embodiment 1.
Fig. 2 is a kind of result of use figure of split type quartz boat among the embodiment 2.
Fig. 3 is the enlarged drawing at A place among Fig. 2.
Fig. 4 is a kind of result of use figure of integral type quartz boat among the embodiment 3.
Fig. 5 is the enlarged drawing at B place among Fig. 4.
Fig. 6 is a kind of result of use figure of integral type quartz boat among the embodiment 4.
Fig. 7 is the enlarged drawing at C place among Fig. 6.
Among the figure: silicon chip 1, activity selectivity diffusion template 2, split type quartz boat 3, draw-in groove 4, hollow slots 5,
Fixedly selectivity spreads template 6, integral type quartz boat 7.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further description.
With a slice silicon chip 1 and a slice thickness is that draw-in groove 4 (see figure 1)s on the split type quartz boat 3 are inserted in the activity selectivity diffusion template 2 of the 0.6mm back of fitting; Have the positive identical hollow slots 5 of grid line printed patterns of shape and silicon chip 1 on the activity selectivity diffusion template 2, the width of draw-in groove 4 is the thickness sum that single silicon chip 1 and monolithic activity selectivity spread template 2.
After the load, in diffusion furnace, feeding flow earlier is the big N of 15L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 800 ℃, the split type quartz boat 3 that is inserted with silicon chip 1 is pushed in the diffusion furnace, advancing the boat time is 15min, regulates big N then
2Flow makes the interior temperature of stove rise to and be stabilized in 844 ℃ to 28L/min, and heating rate is 2 ℃/min, and behind temperature stabilization in the stove, feeding flow is the O of 4L/min
2, treat O
2After feeding 1min, regulate big N
2Flow is to 20L/min, and feeding through 20 ℃ of POCl3 liquid sources and flow simultaneously is the little N of 2L/min
2, treat little N
2After feeding 15min, close O
2With little N
2, continue to feed big N
2, treat big N
2After feeding 10min again, close big N
2, feeding flow is the O of 4 L/min
2, treat O
2After feeding 8min, close O
2, feeding flow again is the big N of 25 L/min
2, rate of temperature fall is 3 ℃/min, when treating that temperature is reduced to 810 ℃ in the stove, closes big N
2Split type quartz boat 3 is retreated to fire door; Moving back the boat time is 17min, when treating that temperature is reduced to 750 ℃ in the stove, split type quartz boat 3 is taken out in diffusion furnace; Treat that getting six silicon chips 1 after silicon chip 1 cooling adopts the resistance test of the four probe method side of carrying out, after the test silicon chip 1 is spread template 2 together with the activity selectivity and unload from split type quartz boat 3 and get final product.
The silicon chip of being fitted each other in two back sides 1 is clipped in two thickness and is (see figure 3) between the activity selectivity diffusion template 2 of 1.2mm; Insert the draw-in groove 4 on the split type quartz boat 3 after fitting; Have positive identical hollow slots 5 (see figure 2)s of grid line printed patterns of shape and silicon chip 1 on the activity selectivity diffusion template 2, the width of draw-in groove 4 is the thickness sum that two silicon chips 1 and two activity selectivity spread templates 2.
After the load, in diffusion furnace, feeding flow earlier is the big N of 20L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 805 ℃, the split type quartz boat 3 that is inserted with silicon chip 1 is pushed in the diffusion furnace, advancing the boat time is 17min, regulates big N then
2Flow makes the interior temperature of stove rise to and be stabilized in 840 ℃ to 25L/min, and heating rate is 3 ℃/min, and behind temperature stabilization in the stove, feeding flow is the O of 7L/min
2, treat O
2After feeding 2min, regulate big N
2Flow is to 25L/min, and feeding through 20 ℃ of POCl3 liquid sources and flow simultaneously is the little N of 3L/min
2, treat little N
2After feeding 17min, close O
2With little N
2, continue to feed big N
2, treat big N
2After feeding 150min again, close big N
2, feeding flow is the O of 6L/min
2, treat O
2After feeding 10min, close O
2, feeding flow again is the big N of 30 L/min
2, rate of temperature fall is 2 ℃/min, when treating that temperature is reduced to 805 ℃ in the stove, closes big N
2Split type quartz boat 3 is retreated to fire door; Moving back the boat time is 20min, when treating that temperature is reduced to 755 ℃ in the stove, split type quartz boat 3 is taken out in diffusion furnace; Treat that getting four silicon chips 1 after silicon chip 1 cooling adopts the resistance test of the four probe method side of carrying out, after the test silicon chip 1 is spread template 2 with the activity selectivity and unload from split type quartz boat 3 together and get final product.
A slice silicon chip 1 is directly inserted draw-in groove 4 (see figure 5)s on the integral type quartz boat 7; One side of draw-in groove 4 is fixed with the fixedly selectivity diffusion template 6 that a slice thickness is 1.2mm; The width of draw-in groove 4 is the thickness of single silicon chip 1, fixedly has identical hollow slots 5 (see figure 4)s of grid line printed patterns in shape and silicon chip 1 front on the selectivity diffusion template 6.
After the load, in diffusion furnace, feeding flow earlier is the big N of 16L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 810 ℃, the integral type quartz boat 7 that is inserted with silicon chip 1 is pushed in the diffusion furnace, advancing the boat time is 16min, regulates big N then
2Flow makes the interior temperature of stove rise to and be stabilized in 850 ℃ to 30L/min, and heating rate is 3 ℃/min, and behind temperature stabilization in the stove, feeding flow is the O of 9L/min
2, treat O
2When feeding 3min, regulate big N
2Flow is to 22L/min, and feeding through 20 ℃ of POCl3 liquid sources and flow simultaneously is the little N of 4L/min
2, treat little N
2When feeding 20min, close O
2With little N
2, continue to feed big N
2, treat big N
2When feeding 20min again, close big N
2, feeding flow is the O of 7 L/min
2, treat O
2When feeding 12min, close O
2, feeding flow again is the big N of 26 L/min
2, rate of temperature fall is 3 ℃/min, when treating that temperature is reduced to 800 ℃ in the stove, closes big N
2Integral type quartz boat 7 is retreated to fire door; Moving back the boat time is 15min, when treating that temperature is reduced to 780 ℃ in the stove, integral type quartz boat 7 is taken out cooling in diffusion furnace; Treat that getting four silicon chips 1 after silicon chip 1 cooling adopts the resistance of the four probe method side of carrying out to test, after the test silicon chip 1 unloaded from integral type quartz boat 7 and get final product.
The silicon chip of being fitted each other in two back sides 1 directly inserts draw-in groove 4 (see figure 7)s on the integral type quartz boat 7; The both sides of draw-in groove 4 all are fixed with the fixedly selectivity diffusion template 6 that thickness is 0.62mm; The width of draw-in groove 4 is the thickness of two silicon chips 1, fixedly has identical hollow slots 5 (see figure 6)s of grid line printed patterns in shape and silicon chip 1 front on the selectivity diffusion template 6.
After the load, in diffusion furnace, feeding flow earlier is the big N of 15L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 800 ℃, the integral type quartz boat 7 that is inserted with silicon chip 1 is pushed in the diffusion furnace, advancing the boat time is 20min, regulates big N then
2Flow makes the interior temperature of stove rise to and be stabilized in 845 ℃ to 26L/min, and heating rate is 2 ℃/min, and behind temperature stabilization in the stove, feeding flow is the O of 10L/min
2, treat O
2After feeding 1min, regulate big N
2Flow is to 23L/min, and feeding through 20 ℃ of POCl3 liquid sources and flow simultaneously is the little N of 2L/min
2, treat little N
2After feeding 16min, close O
2With little N
2, continue to feed big N
2, treat big N
2After feeding 10min again, close big N
2, feeding flow is the O of 10 L/min
2, treat O
2After feeding 15min, close O
2, feeding flow again is the big N of 30 L/min
2, rate of temperature fall is 2 ℃/min, when treating that temperature is reduced to 807 ℃ in the stove, closes big N
2Integral type quartz boat 7 is retreated to fire door; Moving back the boat time is 18min, when treating that temperature is reduced to 750 ℃ in the stove, integral type quartz boat 7 is taken out cooling in diffusion furnace; Treat that getting six silicon chips 1 after silicon chip 1 cooling adopts the resistance of the four probe method side of carrying out to test, after the test silicon chip 1 unloaded from integral type quartz boat 7 and get final product.
The above embodiment of the present invention all can only be thought can not limit the present invention to explanation of the present invention, should be appreciated that any pro forma accommodation that the present invention is made and/or change all will fall into protection range of the present invention.
Claims (10)
1. a disposable diffusion prepares the method for selective emitter, it is characterized in that described method may further comprise the steps:
Load: silicon chip and activity selectivity diffusion template applying back are inserted the draw-in groove on the split type quartz boat; Or silicon chip inserted separately the draw-in groove that has on the integral type quartz boat that fixing selectivity spreads template; Said activity selectivity spreads template and fixedly is equipped with hollow slots on the selectivity diffusion template, and the shape of said hollow slots is identical with the grid line printed patterns in silicon chip front;
Diffusion: adopt POCl3 liquid source diffusion method to spread, POCl3 liquid source temperature is 20 ℃;
Survey sheet: randomly draw some silicon chips and adopt the resistance test of the four probe method side of carrying out;
Unload sheet.
2. method according to claim 1; It is characterized in that; In the step (), with inserting the draw-in groove on the split type quartz boat simultaneously after a slice silicon chip and the applying of a slice activity selectivity diffusion template, the width of said draw-in groove is the thickness sum of single silicon chip and monolithic activity selectivity diffusion template.
3. method according to claim 1; It is characterized in that; In the step (); The wafer chuck of being fitted each other in two back sides inserts the draw-in groove on the split type quartz boat simultaneously after between two activity selectivity diffusion templates, the width of said draw-in groove is the thickness sum of two silicon chips and two activity selectivity diffusion templates.
4. according to claim 1 or 2 or 3 described methods, it is characterized in that the thickness of said activity selectivity diffusion template is 0.6 ~ 1.2mm.
5. method according to claim 1; It is characterized in that; In the step (); A slice silicon chip directly inserted have the fixedly draw-in groove on the integral type quartz boat of selectivity diffusion template of a slice, said fixedly selectivity spreads template and is positioned at draw-in groove one side, the width of said draw-in groove be single silicon chip thickness.
6. method according to claim 1; It is characterized in that; In the step (); The silicon chip of being fitted each other in two back sides directly inserts and has two fixedly draw-in grooves on the integral type quartz boat of selectivity diffusion template, and said fixedly selectivity diffusion template lays respectively at the draw-in groove both sides, and the width of said draw-in groove is the thickness sum of two silicon chips.
7. according to claim 1 or 5 or 6 described methods, it is characterized in that the thickness of said fixedly selectivity diffusion template is 0.6 ~ 1.2mm.
8. method according to claim 1 is characterized in that, diffusion may further comprise the steps in the step (two):
Advance boat: in diffusion furnace, feeding flow is the big N of 15 ~ 20L/min
2Diffusion furnace is heated up, when temperature in the stove rises to 800 ~ 810 ℃, split type quartz boat that is inserted with silicon chip or integral type quartz boat are pushed in the diffusion furnace, advancing the boat time is 15 ~ 20min;
Rise again: regulate big N
2Flow to 25 ~ 30L/min makes the interior temperature of stove rise to and be stabilized in 840 ~ 850 ℃;
Pre-oxidation: feeding flow is the O of 4 ~ 10L/min
2
TongYuan: treat O
2After feeding 1 ~ 3min, regulate big N
2Flow to 20 ~ 25L/min, feeding simultaneously through POCl3 liquid source and flow is the little N of 2 ~ 4L/min
2
Nitrogen drives in: treat little N
2After feeding 15 ~ 20min, close O
2With little N
2, continue to feed big N
2
Oxygen drives in: treat big N
2After feeding 10 ~ 20min again, close big N
2, feeding flow is the O of 4 ~ 10 L/min
2
Cooling: treat O
2After feeding 8 ~ 15min, close O
2, feeding flow again is the big N of 25 ~ 30 L/min
2, when treating that temperature is reduced to 800 ~ 810 ℃ in the stove, close big N
2
Go out boat: split type quartz boat or integral type quartz boat are retreated to fire door, and moving back the boat time is 15 ~ 20min, when treating that temperature is reduced to 750 ~ 780 ℃ in the stove, split type quartz boat or integral type quartz boat is taken out cooling in diffusion furnace.
9. method according to claim 8 is characterized in that, heating rate is 2 ~ 3 ℃/min in the step (2).
10. method according to claim 8 is characterized in that, rate of temperature fall is 2 ~ 3 ℃/min in the step (7).
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