CN102779866B - Deep hole staggered back contact solar battery structure and manufacturing method thereof - Google Patents
Deep hole staggered back contact solar battery structure and manufacturing method thereof Download PDFInfo
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- CN102779866B CN102779866B CN201210294009.9A CN201210294009A CN102779866B CN 102779866 B CN102779866 B CN 102779866B CN 201210294009 A CN201210294009 A CN 201210294009A CN 102779866 B CN102779866 B CN 102779866B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000000608 laser ablation Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a photovoltaic device for converting optical energy into electrical energy, and specifically relates to a deep hole staggered back contact solar battery structure and a manufacturing method of the photovoltaic device. By adopting a laser ablation method, deep holes with same depth are respectively formed on the upper surfaces of a P+ type diffusion zone and a N+ type diffusion zone which are formed on the back surface in a staggered manner, wherein the deep holes are not deep enough to reach a doping zone on the front surface of a silicon substrate. The deep holes respectively have same doping concentration and doping depth with the local diffusion zone. According to the invention, by the method of manufacturing the deep holes on a base electrode and an emitting electrode, the problems of failure in effective collection of some short life current carriers and high series resistance cased by long transmission distance of the current carriers in the conventional staggered back electrode scheme are solved. The deep hole structure greatly shortens the diffusion distance of the photon-generated carriers, thus, more photon-generated carriers are collected and the recombination loss of the photon-generated carriers is reduced, the series resistance of batteries is reduced, and the conversion efficiency of the solar battery is further improved.
Description
Technical field
The present invention relates to transform light energy is the photovoltaic device of electric energy, is specifically related to a kind of deep hole and interlocks back contact solar cell structure and manufacture method thereof.
Background technology
At present, one of most typical method for manufacturing solar battery adopts double-face electrode scheme, namely from silicon chip two sides, and the solar cell fabrication scheme of extraction electrode on P type and N-type doped region respectively.The feature that this scheme has is: use P type substrate silicon chip, and do the doping of N+ type on surface and form PN junction, although technique is simple, low cost of manufacture, conversion efficiency is also lower.
In order to improve the conversion efficiency of solar cell, people also been proposed multiple improving countermeasure, a kind of scheme is wherein staggered back contact solar cell fabrication scheme, the feature of the program is: adopt N-type substrate silicon chip, in the staggered P+ type that does of silicon chip back-surface side and the doping of N+ type, form PN junction, and from the P+ type district of this side and N+ type district extraction electrode respectively, the technique of this scheme can be comparatively more complex, manufacturing cost is also higher, but its conversion efficiency is higher, has more competitive advantage from composite factor.
But the photo-generated carrier of staggered back contact solar cell results from the front surface of silicon chip, these charge carriers need the base stage and the emitter that are arrived silicon chip rear surface by diffusion motion.For n type single crystal silicon substrate, N+ type diffusion region is base stage, and P+ type diffusion region is emitter.Emitter collects minority carrier-hole, and base stage collects majority carrier-electronics.There is two problems in this battery, one is only have the charge carrier that can be diffused into rear surface just likely to convert electric energy to, and those charge carriers that cannot arrive rear surface because the life-span is short just cannot play the effect of generating.Two is that charge carrier needs to be diffused into rear surface from front surface, makes the series resistance of battery comparatively large, affects photoelectric conversion efficiency.
Summary of the invention
In view of above-mentioned prior art Problems existing, the object of the invention is to research and develop a kind of deep hole and to interlock back contact solar cell structure and manufacture method thereof.By adopting the method for laser ablation, multiple deep hole is produced in the P+ type be staggered to form in silicon substrate rear surface and N+ type diffusion region, this deep hole has identical doping content and doping depth with place P+ type or N+ type diffusion region, but this deep hole degree of depth does not arrive the doped region of silicon substrate front surface.Interlock compared with back electrode scheme with tradition, this deep-hole structures extends near front surface diffusion region from the rear surface of silicon substrate, substantially reduce the diffusion length of photo-generated carrier, therefore more photo-generated carrier had both been collected, turn reduce the series resistance of battery, thus further increase the conversion efficiency of battery.
The technical scheme that the present invention takes is: a kind of deep hole interlocks back contact solar cell structure, comprise rear surface and relative front surface that silicon substrate has, rear surface is staggered to form multiple P+ type or N+ type diffusion region and N+ type or P+ type diffusion region, in the continuous print diffusion region that front surface is formed, it is characterized in that: the multiple P+ type be staggered to form on rear surface or N+ type diffusion region and N+ type or P+ type diffusion region upper surface form the deep hole of multiple deep equality respectively.
Deep hole interlocks the manufacture method of back contact solar cell structure, it is characterized in that: comprise the following steps:
(1). use laser ablation methods to form the structure of multiple deep hole in the rear surface of silicon substrate;
(2). P+ type or N+ type dopant are diffused into P+ type or the N+ type diffusion region of silicon substrate rear surface, make all P+ types or N+ type diffusion region on the rear surface of silicon substrate all have P+ type or N+ type concentration of dopant, and enter silicon substrate from rear surface along the deep hole degree of depth;
(3). N+ type or P+ type dopant are diffused into N+ type or the P+ type diffusion region of silicon substrate rear surface, make all N+ types or P+ type diffusion region on the rear surface of silicon substrate all have N+ type or P+ type concentration of dopant, and enter silicon substrate from rear surface along the deep hole degree of depth;
(4). P+ type or N+ type dopant are diffused into the front surface of silicon substrate, form the diffusion region with silicon substrate with identical conduction type.
The beneficial effect that the present invention produces is: the part short life charge carrier caused because of carrier transport distance that the present invention solves the staggered back electrode scheme existence of tradition by the method manufacturing deep hole in base stage and emitter can not effectively collect the problem large with series resistance.This deep-hole structures substantially reduces the diffusion length of photo-generated carrier, some photo-generated carriers that cannot be diffused into silicon substrate rear surface because minority carrier life time is short also effectively can be collected by deep hole, and shortening transmission range can reduce series resistance, therefore, both the recombination loss that more photo-generated carrier reduces photo-generated carrier had been collected, turn reduce the series resistance of battery, thus further increase the conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is that deep hole interlocks back contact solar cell partial structurtes stereogram;
Fig. 2 is that deep hole interlocks back contact solar cell partial structurtes cross sectional side view;
Fig. 3 is that deep hole interlocks back contact solar cell fabrication processing figure.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described: direction term used in the present invention as " on ", the relative position that all means illustration purpose and provide such as D score, "front", "rear", and be not meant to be the absolute reference system of expression one.
Fig. 1 and Fig. 2 is reduced to and only shows several diffusion zone, and utilizes distortion ratio with outstanding key feature of the present invention.
See figures.1.and.2, a kind of deep hole back contact solar cell structure of interlocking comprises rear surface 102 and relative front surface 103 that silicon substrate 101 has, rear surface 102 is staggered to form multiple P+ type or N+ type diffusion region 106 and N+ type or P+ type diffusion region 107, form continuous print diffusion region 108 at front surface 103, the P+ type that rear surface 102 is staggered to form or N+ type diffusion region 106 and N+ type or P+ type diffusion region 107 upper surface form the deep hole 104 of multiple deep equality respectively.P+ type or N+ type diffusion region 106 and N+ type or P+ type diffusion region 107 along deep hole 104 inwall, bottom to silicon substrate 101, but do not arrive the continuous print diffusion region 108 that front surface 103 formed respectively by the upper surface of the deep hole 104 on it.
Deep hole the first passivation layer 110, first passivation layer 110 that back contact solar cell also comprises on silicon substrate 101 that interlocks is formed on rear surface 102 and front surface 103 simultaneously.Rear surface 102 also comprises the multiple metal levels 109 extending through the first passivation layer 110, and metal level 109 contacts with N+ type diffusion region 107 with P+ type diffusion region 106 through the first passivation layer 110 of rear surface 102.Front surface 103 also comprises the second passivation layer 105 be formed on the first passivation layer 110.
Silicon substrate 101 selects N-type or P-type silicon sheet, and Si-Substrate Thickness is within the scope of 50-250um.The degree of depth of deep hole 104 is within the scope of 5-250um.The degree of depth of deep hole 104 is greater than the degree of depth of P+ type or N+ type diffusion region 106 and N+ type or the diffusion of P+ type diffusion region 107 upper surface.
Si-Substrate Thickness, between 50-250um, too thickly can increase silicon materials cost, and the too thin technique that can increase realizes difficulty.General thickness, when 150-250um, can use silk-screen printing technique to realize being separated of P+ diffusion region and N+ diffusion region; Thickness is when 50-150um, and the mode that directional light can be used to expose realizes P+ diffusion region and being separated of N+ diffusion region etc.The Kong Yueshen of deep-hole structures, is more conducive to the collection of charge carrier, but deep hole bottom does not touch the diffusion region of front surface, therefore the thickness (being generally hundreds of nanometer) of hole depth at least one front surface diffusion region less of silicon wafer thickness.The depth capacity in hole can be rough etc. be all silicon wafer thickness (250um silicon chip, hole depth is 250um), and minimum-depth is not also lower than the 10%(50um silicon chip of thickness, and hole depth is 5um).Diffusion region area ratio shared by the aperture of deep hole is 5%-90%, and the little meeting of ratio makes carrier collection DeGrain, and ratio can increase greatly again the angularity of silicon chip, increases technique and realizes difficulty and reduce product reliability.Same diffusion region medium-length hole should be uniformly distributed, and different diffusion regions medium-length hole can be interspersed, and is so more conducive to the collection of charge carrier.
Embodiment: silicon substrate selects N-type silicon chip (also can use p type single crystal silicon wafer and N-type or P type polysilicon handle wafer), <100> crystal orientation, resistivity is 1-20 Ω cm, and silicon wafer thickness is 200um, and the deep hole degree of depth is 180um.Concrete technology step following (see Fig. 1, Fig. 2 and Fig. 3):
(1) wet blasting: silicon substrate 101, by wet treatment, to contribute to the clean of rear surface 102 and front surface 103, etches away the coarse particles on surface.
(2) laser ablation deep hole: the rear surface 102 adopting laser scanner ablation silicon substrate 101, to form deep hole 104, deep hole size is relevant with Si-Substrate Thickness, the silicon substrate 101 that 200um is thick) degree of depth of preferred deep hole 104 is 180um.
(3) boracic and silica deposit free from foreign meter: the diffusion of P+ type dopant is the inwall and the bottom that the silicon dioxide of boracic and silicon dioxide free from foreign meter are successively deposited on all P+ type diffusion regions 106, the rear surface 102 of silicon substrate 101 and N+ type diffusion region 107 and deep hole 104, all P+ type diffusion regions 106 and N+ type diffusion region 107 and deep hole 104 on the rear surface 102 of silicon substrate 101 is made all to cover double-layer films, the ground floor contacted with rear surface is the silica membrane of boracic, and the second layer is silica membrane free from foreign meter.
(4) graphical etching boracic silicon dioxide and silicon dioxide free from foreign meter: resist is coated on P+ type diffusion region 106 upper surface by silk screen printing by (selectivity), then silicon substrate 101 is placed in the chemical solution of hydrofluoric acid containing, removes the boracic silicon dioxide and silicon dioxide free from foreign meter that are not covered by resist.
(5) boron advances diffusion: heating silicon substrate 101, makes the boron in silicon dioxide be diffused on all P+ type diffusion regions 106, and enter silicon substrate 101 from P+ type diffusion region 106 along deep hole 104.
(6) phosphorous silica deposit and phosphorus advance diffusion: behind formation P+ type diffusion region 106, by the inwall of phosphorous silica deposit deep hole 104 in the P+ type diffusion region 106 of the rear surface 102 of silicon substrate 101 and N+ type diffusion region 107 and P+ type and N+ type diffusion region and bottom, then silicon substrate 101 is heated, the phosphorus in silicon dioxide is made to be diffused into all N+ type diffusion regions 107, the rear surface 102 of silicon substrate 101, and enter silicon substrate 101 from N+ type diffusion region 107 along deep hole 104, on P+ type diffusion region 106, silicon dioxide free from foreign meter stops the phosphorus in phosphorous silicon dioxide to be diffused into deep hole 104 in all P+ type diffusion regions 106 and P+ type diffusion region.
(7) front making herbs into wool and phosphorus diffusion: behind formation P+ type diffusion region 106 and N+ type diffusion region 107, silicon substrate 101 is placed in the making herbs into wool solution containing alkali, make the front surface of silicon substrate 101 generate the matte containing some positive pyramids, matte height is within the scope of 1um-10um.Then silicon substrate 101 is placed in the boiler tube containing phosphorus oxychloride, boiler tube heating-up temperature 950 DEG C, make the phosphorus in phosphorus oxychloride be diffused into front surface 103 continuous print diffusion region 108, and the boracic of silicon substrate 101 rear surface 102 and the silicon dioxide of phosphorus and silicon dioxide free from foreign meter stop the phosphorus in phosphorus oxychloride to be diffused into deep hole 104 in all P+ type diffusion regions 106, the rear surface 102 of silicon substrate 101 and N+ type diffusion region 107 and P+ type diffusion region 106 and N+ type diffusion region 107.
(8) remove silicon dioxide: chemical solution silicon substrate 101 being placed in hydrofluoric acid containing, remove boracic silicon dioxide, phosphorous silicon dioxide and silicon dioxide free from foreign meter on silicon substrate 101 rear surface 102 and front surface 103.
(9) passivation on double surfaces: by boiler tube thermal oxidation, generate layer of silicon dioxide (the first passivation layer) 110 in the rear surface 102 of silicon substrate 101 and front surface 103 simultaneously, and on the silicon dioxide (the first passivation layer) 110 of front surface 103, deposit one deck silicon nitride (the second passivation layer) 105 by PCVD (PECVD) equipment.The method of silk screen printing is utilized to etch away the silicon dioxide with metal level 109 contact portion on rear surface 102.
(10) plated metal Seed Layer: in the rear surface 102 plated metal Seed Layer of silicon substrate 101, and by the method for silk screen printing, resist is coated on metal level 109 upper surface.
(11) plated metal: silicon substrate 101 is placed in electroplating solution, to add thick metal layers 109.
(12) are separated P, N district metal: silicon substrate 101 is placed in corrosion of metals solution, with the metal seed layer removing the surperficial resist of metal level 109 and be not thickened.
Claims (8)
1. a deep hole interlocks back contact solar cell structure, comprise rear surface (102) and relative front surface (103) that silicon substrate (101) has, rear surface (102) are staggered to form multiple P+ type or N+ type diffusion region (106) and N+ type or P+ type diffusion region (107), continuous print diffusion region (108) is formed at front surface (103), it is characterized in that: the P+ type be staggered to form on rear surface (102) or N+ type diffusion region (106) and N+ type or P+ type diffusion region (107) upper surface form the deep hole (104) of multiple deep equality respectively, the degree of depth of described deep hole (104) is within the scope of 5-250um.
2. a kind of deep hole according to claim 1 interlocks back contact solar cell structure, it is characterized in that: described P+ type or N+ type diffusion region (106) and N+ type or P+ type diffusion region (107) along deep hole (104) inwall, bottom to described silicon substrate (101), but do not arrive the continuous print diffusion region (108) that described front surface (103) formed respectively by the upper surface of the deep hole (104) on it.
3. a kind of deep hole according to claim 1 interlocks back contact solar cell structure, it is characterized in that: described silicon substrate (101) selects monocrystalline or the polysilicon chip of N-type or P type, and Si-Substrate Thickness is within the scope of 50-250um.
4. a kind of deep hole according to claim 1 interlocks back contact solar cell structure, it is characterized in that: the degree of depth of described deep hole (104) is greater than the degree of depth of P+ type or N+ type diffusion region (106) and N+ type or the diffusion of P+ type diffusion region (107) upper surface.
5. a kind of deep hole according to claim 1 interlocks the manufacture method of back contact solar cell structure, it is characterized in that: comprise the following steps:
(1). adopt the method for laser ablation, form the structure of multiple deep hole in the rear surface of silicon substrate;
(2). P+ type dopant is diffused into the P+ type diffusion region of silicon substrate rear surface, makes all P+ type diffusion regions on the rear surface of silicon substrate all have P+ type dopant type, and enter silicon substrate from rear surface along deep hole;
(3). N+ type dopant is diffused into the N+ type diffusion region of silicon substrate rear surface, makes all N+ type diffusion regions on the rear surface of silicon substrate all have N+ type dopant type, and enter silicon substrate from rear surface along deep hole;
(4). P+ type or N+ type dopant are diffused into the front surface of silicon substrate, form the diffusion region with silicon substrate with identical conduction type.
6. a kind of deep hole according to claim 5 interlocks the manufacture method of back contact solar cell structure, it is characterized in that: the diffusion of described P+ type dopant is the inwall and the bottom that the silicon dioxide of boracic and silicon dioxide free from foreign meter are successively deposited on all P+ type diffusion regions, the rear surface of silicon substrate and N+ type diffusion region and deep hole, the method of silk screen printing or directional light exposure is adopted to etch away the boracic silicon dioxide of inner walls of deep holes and bottom covering within the scope of N+ type diffusion region and N+ type diffusion region and silicon dioxide free from foreign meter, then silicon substrate is heated, the boron in silicon dioxide is made to be diffused on all P+ type diffusion regions, and enter silicon substrate from P+ type diffusion region along deep hole.
7. a kind of deep hole according to claim 6 interlocks the manufacture method of back contact solar cell structure, it is characterized in that: behind formation P+ type diffusion region, by the inwall of deep hole in the P+ type of phosphorous silica deposit in the rear surface of described silicon substrate and N+ type diffusion region and P+ type and N+ type diffusion region and bottom, then silicon substrate is heated, the phosphorus in silicon dioxide is made to be diffused into all N+ type diffusion regions, the rear surface of silicon substrate, and enter silicon substrate from N+ type diffusion region along deep hole, on P+ type diffusion region, silicon dioxide free from foreign meter stops the phosphorus in phosphorous silicon dioxide to be diffused into deep hole in all P+ type diffusion regions and P+ type diffusion region.
8. a kind of deep hole according to claim 7 interlocks the manufacture method of back contact solar cell structure, it is characterized in that: behind formation P+ type diffusion region and N+ type diffusion region, silicon substrate is placed in the boiler tube containing phosphorus oxychloride, make the phosphorus in phosphorus oxychloride be diffused into the diffusion region of front surface, and the boracic of silicon substrate rear surface and the silicon dioxide of phosphorus and silicon dioxide free from foreign meter stop the phosphorus in phosphorus oxychloride to be diffused into deep hole in all P+ type diffusion regions, the rear surface of silicon substrate and N+ type diffusion region and P+ type diffusion region and N+ type diffusion region.
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| CN201210294009.9A CN102779866B (en) | 2012-08-17 | 2012-08-17 | Deep hole staggered back contact solar battery structure and manufacturing method thereof |
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| CN201210294009.9A CN102779866B (en) | 2012-08-17 | 2012-08-17 | Deep hole staggered back contact solar battery structure and manufacturing method thereof |
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| CN112186055B (en) * | 2020-09-29 | 2022-01-07 | 复旦大学 | Combined solar three-dimensional integrated system and preparation method thereof |
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| US6034321A (en) * | 1998-03-24 | 2000-03-07 | Essential Research, Inc. | Dot-junction photovoltaic cells using high-absorption semiconductors |
| US6700175B1 (en) * | 1999-07-02 | 2004-03-02 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Vertical semiconductor device having alternating conductivity semiconductor regions |
| CN201112399Y (en) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure |
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| US7670638B2 (en) * | 2007-05-17 | 2010-03-02 | Sunpower Corporation | Protection layer for fabricating a solar cell |
| KR20120009682A (en) * | 2010-07-20 | 2012-02-02 | 삼성전자주식회사 | Method for manufacturing a solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6034321A (en) * | 1998-03-24 | 2000-03-07 | Essential Research, Inc. | Dot-junction photovoltaic cells using high-absorption semiconductors |
| US6700175B1 (en) * | 1999-07-02 | 2004-03-02 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Vertical semiconductor device having alternating conductivity semiconductor regions |
| CN201112399Y (en) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure |
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