CN102776564A - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
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- CN102776564A CN102776564A CN2012103155715A CN201210315571A CN102776564A CN 102776564 A CN102776564 A CN 102776564A CN 2012103155715 A CN2012103155715 A CN 2012103155715A CN 201210315571 A CN201210315571 A CN 201210315571A CN 102776564 A CN102776564 A CN 102776564A
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Abstract
The invention provides a polycrystalline silicon ingot furnace which comprises a heat insulation cage, a crucible and a directional coagulation-assistant block, wherein a graphite paper is arranged at the inner surface of the heat insulation cage. The graphite paper has a smooth surface and good reflecting action to infrared emanation, the heat loss of the furnace is reduced, and the heat preservation and insulation capabilities of the heat insulation cage are improved; and furthermore, the energy consumption of the silicon ingot production process is reduced and the energy utilization rate is improved.
Description
Technical field:
The present invention relates to solar cell manufacturing technology field, relate in particular to a kind of polycrystalline silicon ingot or purifying furnace.
Background technology:
Solar cell can be an electric energy with transform light energy, is an emphasis of modern energy-conservation social development.According to the difference of body material, existing solar cell is divided into polysilicon solar cell, monocrystaline silicon solar cell and type monocrystaline silicon solar cell.Wherein, The transformation efficiency of monocrystaline silicon solar cell is high; But production cost is also high; The transformation efficiency of polysilicon solar cell is than the low 1%-2% of monocrystaline silicon solar cell, but its production cost is also low, and a type monocrystaline silicon solar cell is the battery between monocrystalline silicon battery and polysilicon solar cell.Take all factors into consideration, solar cell in the market is main with polysilicon solar cell still, and a type monocrystaline silicon solar cell also occupies bigger proportion.
The existing polycrystal silicon ingot that is used to produce polysilicon solar cell adopts directional solidification method to make usually; Its ultimate principle is: the silicon material is placed in the crucible of polycrystalline silicon ingot or purifying furnace, utilizes the heating unit in the polycrystalline silicon ingot or purifying furnace that crucible is heated, make the silicon material be fused into liquid state fully; Again through the temperature variation in the control stove; Form thermograde longitudinally, silicon material solution is carried out cooling from bottom to top, realize the crystalline oriented growth.
The class silicon single crystal ingot of class monocrystaline silicon solar cell adopts the low-cost castmethod of similar polycrystal silicon ingot to process, and promptly at first lays certain thickness inculating crystal layer in crucible bottom, and above inculating crystal layer, stacks the silicon material; To the crucible heating, make said silicon material be fused into liquid state fully, and make inculating crystal layer partial melting, the inculating crystal layer of rest part still keep solid-state, solid-state inculating crystal layer is used for direct subsequent and is grown to serve as the silicon crystal that has with the identical crystalline orientation of seed crystal; Temperature variation through in the control stove forms the longitudinal temperature gradient perpendicular to crucible bottom, and silicon material solution is carried out cooling from bottom to top, realizes the crystalline oriented growth.
But, existing polycrystal silicon ingot and type silicon single crystal ingot working method, energy consumption is bigger, energy utilization rate is lower.
Summary of the invention
For solving the problems of the technologies described above, the purpose of application of the present invention is to provide a kind of polycrystalline silicon ingot or purifying furnace, to reduce the energy consumption that silicon ingot is produced, improves energy utilization rate.
For realizing above-mentioned purpose, the invention provides following technical scheme:
A kind of polycrystalline silicon ingot or purifying furnace comprises that heat-insulation cage, crucible and orientation help grumeleuse, and said heat-insulation cage internal surface is provided with graphite paper.
Preferably, said graphite paper directly sticks on said heat-insulation cage internal surface.
Preferably, said graphite paper is bolted to said heat-insulation cage internal surface through graphite.
Preferably, said heat-insulation cage is divided into top heat-insulation cage, side heat-insulation cage and end heat-insulation cage.
Preferably, to help the distance between grumeleuse and the end heat-insulation cage be 180mm ~ 260mm to said orientation.
Preferably, to help the distance between grumeleuse and the end heat-insulation cage be 180mm to said orientation.
Preferably, the height of said crucible is 480mm ~ 600mm.
Preferably, the height of said crucible is 600mm.
In the technical scheme provided by the present invention; The heat-insulation cage internal surface of polycrystalline silicon ingot or purifying furnace is provided with graphite paper, and the smooth surface of said graphite paper has good reflex action to infrared emanation; Reduced scattering and disappearing of furnace heat; Improve the heat insulating ability of heat-insulation cage, and then reduced the energy consumption in the silicon ingot production process, improved energy utilization rate.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The structural representation of a kind of polycrystalline silicon ingot or purifying furnace that Fig. 1 provides for the embodiment of the invention;
The structural representation of the another kind of polycrystalline silicon ingot or purifying furnace that Fig. 2 provides for the embodiment of the invention;
A kind of polycrystalline silicon ingot or purifying furnace that Fig. 3 provides for the embodiment of the invention is in the state graph in long brilliant stage.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer; To combine the accompanying drawing in the embodiment of the invention below; Technical scheme in the embodiment of the invention is carried out clear, intactly description; Obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Said as the background technology part, existing polycrystal silicon ingot and type silicon single crystal ingot working method, energy consumption is bigger, energy utilization rate is lower.
The contriver discovers, because the hard felt of graphite has good heat-insulating property and density is less, so existing polycrystalline silicon ingot or purifying furnace generally adopts the lagging material of the hard felt of graphite as heat-insulation cage.But the heat-insulation and heat-preservation effect of the hard felt of graphite mainly is because crafters in it and material characteristic itself have played inhibition to the conduction of heat, but the obstruction ability of propagating for infrared emanation a little less than.
The invention discloses a kind of polycrystalline silicon ingot or purifying furnace, comprise that heat-insulation cage, crucible and orientation help grumeleuse, said heat-insulation cage internal surface is provided with graphite paper.
Can find out by such scheme; The heat-insulation cage internal surface of polycrystalline silicon ingot or purifying furnace is provided with graphite paper, and the smooth surface of said graphite paper has good reflex action to infrared emanation; Reduced scattering and disappearing of furnace heat; Improve the heat insulating ability of heat-insulation cage, and then reduced the energy consumption in the silicon ingot production process, improved energy utilization rate.
It more than is the application's core concept; To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention carried out clear, intactly description, obviously; Described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
The embodiment of the invention discloses a kind of polycrystalline silicon ingot or purifying furnace, comprise that heat-insulation cage, crucible and orientation help grumeleuse, said heat-insulation cage internal surface is provided with graphite paper.
Concrete; As shown in Figure 1, said heat-insulation cage is divided into top heat-insulation cage 10, side heat-insulation cage 11 and end heat-insulation cage 12, and heat-insulation cage of the said end 12 separates setting with side heat-insulation cage 11; So that in the long brilliant stage of silicon ingot; Heat-insulation cage of the said end 12 separates with side heat-insulation cage 11, makes said heat-insulation cage form non-enclosed space, distributes with the heat that helps in the heat-insulation cage.
Said graphite paper 13 is arranged on the internal surface of said heat-insulation cage; Can said graphite paper 13 directly be sticked on said heat-insulation cage internal surface through chemical binder; Perhaps, for example said graphite paper 13 is bolted to said heat-insulation cage internal surface through frivolous graphite through physical method.
Need to prove; Through chemical binder said graphite paper 13 is directly sticked under the situation of said heat-insulation cage internal surface; Because said graphite paper 13 is under the pyritous environment in work with heat-insulation cage; So said chemical binder needs certain thermotolerance, to be unlikely to that said graphite paper 13 is broken away from heat-insulation cage under the pyritous environment.
Said crucible 14 is arranged on the inside cavity of said heat-insulation cage, is used to hold the silicon material, and the height of said crucible 14 is 480mm, can contain the silicon material that carries 500Kg; Said orientation helps grumeleuse 15 to be arranged on said crucible below, is used for support crucible 14, and assists the long brilliant process of control in the long brilliant stage, and it is 300mm that said orientation helps the grumeleuse 15 and the distance of end heat-insulation cage 12; Said orientation helps grumeleuse 15 belows also to be provided with pillar stiffener 16, and said pillar stiffener 16 is used to support orientation and helps grumeleuse 15.
In the technical scheme that the application embodiment provided; The heat-insulation cage internal surface of polycrystalline silicon ingot or purifying furnace is provided with graphite paper 13, and the smooth surface of said graphite paper 13 has good reflex action to infrared emanation; Reduced scattering and disappearing of furnace heat; Improve the heat insulating ability of heat-insulation cage, and then reduced the energy consumption in the silicon ingot production process, improved energy utilization rate.
Another embodiment of the application discloses another kind of polycrystalline silicon ingot or purifying furnace, and is as shown in Figure 2, comprising:
Heat-insulation cage, crucible and orientation help grumeleuse, and said heat-insulation cage internal surface is provided with graphite paper, and it is 180mm ~ 260mm that said orientation helps the distance L between grumeleuse and the end heat-insulation cage; Accordingly; The height h of said crucible is 480mm ~ 600mm, throws the stove amount in order to obtain big as far as possible silicon material, so preferred; It is 180mm that said orientation helps the distance L between grumeleuse and the end heat-insulation cage, and the height h of said crucible is 600mm.
The contriver discovers; The orientation of existing polycrystalline silicon ingot or purifying furnace helps the distance between grumeleuse and the end heat-insulation cage to be generally 300mm; Said orientation helps the space between grumeleuse and the end heat-insulation cage bigger, and infrared emanation helps the propagation between grumeleuse and the end heat-insulation cage in orientation, can not get abundant, multiple utilization; And orientation helps the distance between grumeleuse and the end heat-insulation cage bigger, and the loss of causes heat further increases.
So the polycrystalline silicon ingot or purifying furnace that present embodiment provides has shortened orientation and has helped the distance between grumeleuse and the end heat-insulation cage, has promptly shortened the invalid travel path of infrared emanation, and the heat of infrared emanation is fully used, and has improved energy utilization ratio.
But the unlimited orientation of dwindling helps the orientation in the long brilliant process of distance meeting influence between grumeleuse and the end heat-insulation cage to help the grumeleuse heat-sinking capability; Take into account above-mentioned two aspect factors; In order to obtain best effect; It is 180mm ~ 260mm that the orientation that present embodiment provided helps the distance L between grumeleuse and the end heat-insulation cage, and it is 180mm that preferred said orientation helps the distance L between grumeleuse and the end heat-insulation cage.
In addition, because orientation has helped the reduced distances between grumeleuse and the end heat-insulation cage, then said orientation helps the distance between grumeleuse and the top heat-insulation cage to increase; The space capable of using of said crucible has increased accordingly; Therefore, present embodiment can be selected more jumbo crucible for use, and the crucible height h that promptly present embodiment provided is 480mm ~ 600mm; Preferably, the height h of said crucible is 600mm.The crucible that 600mm is high can be contained the silicon material that carries 650Kg, and with respect to existing polycrystalline silicon ingot or purifying furnace, single stove of the monocrystalline ingot furnace that present embodiment provided is thrown the stove amount has increased 150Kg, and energy consumption has reduced about 500kWh.
And the smooth surface of said graphite paper has good reflex action to infrared emanation; Reduced scattering and disappearing of furnace heat, improved the heat insulating ability of heat-insulation cage, when then said ingot furnace reaches predefined temperature; The energy that is consumed has reduced; And the energy that holding temperature consumed has also reduced, and then reduces the energy consumption in the silicon ingot production process, has improved energy utilization rate.
The another embodiment of the application discloses a kind of working method of silicon ingot, comprising:
In the crucible of polycrystalline silicon ingot or purifying furnace, throw in the silicon material of 650Kg, the height of said crucible is 600mm;
The sealing heat-insulation cage, and heat until the fusing of silicon material, said heat-insulation cage internal surface is provided with graphite paper; And it is 180mm that the orientation of said polycrystalline silicon ingot or purifying furnace helps the distance between grumeleuse and the end heat-insulation cage, then in heat-processed, has the effectively reflective infrared thermal radiation of graphite paper of smooth surface; Reduced scattering and disappearing of furnace heat; And infrared emanation helps the invalid propagation distance between grumeleuse and the end heat-insulation cage to shorten in orientation, further increased the utilization ratio of heat, reduced energy consumption;
Rising side heat-insulation cage, said side heat-insulation cage separates with end heat-insulation cage, makes heat-insulation cage be open (as shown in Figure 3), promotes that the temperature in the heat-insulation cage outwards sheds, and reduces the temperature in the heat-insulation cage, makes the silicon material crystalline growth of molten state;
Annealing and cooling reduce dislocation and defective in the polycrystal silicon ingot.
Each embodiment adopts the mode of going forward one by one to describe in the specification sheets of the present invention, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (8)
1. polycrystalline silicon ingot or purifying furnace comprises that heat-insulation cage, crucible and orientation help grumeleuse, is characterized in that:
Said heat-insulation cage internal surface is provided with graphite paper.
2. according to the said polycrystalline silicon ingot or purifying furnace of claim 1, it is characterized in that said graphite paper directly sticks on said heat-insulation cage internal surface.
3. according to the said polycrystalline silicon ingot or purifying furnace of claim 1, it is characterized in that said graphite paper is bolted to said heat-insulation cage internal surface through graphite.
4. according to the said polycrystalline silicon ingot or purifying furnace of claim 1, it is characterized in that said heat-insulation cage is divided into top heat-insulation cage, side heat-insulation cage and end heat-insulation cage.
5. according to the said polycrystalline silicon ingot or purifying furnace of claim 4, it is characterized in that it is 180mm ~ 260mm that said orientation helps the distance between grumeleuse and the end heat-insulation cage.
6. according to the said polycrystalline silicon ingot or purifying furnace of claim 5, it is characterized in that it is 180mm that said orientation helps the distance between grumeleuse and the end heat-insulation cage.
7. according to the said polycrystalline silicon ingot or purifying furnace of claim 5, it is characterized in that the height of said crucible is 480mm ~ 600mm.
8. according to the said polycrystalline silicon ingot or purifying furnace of claim 7, it is characterized in that the height of said crucible is 600mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103155715A CN102776564A (en) | 2012-08-30 | 2012-08-30 | Polycrystalline silicon ingot furnace |
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| CN2012103155715A CN102776564A (en) | 2012-08-30 | 2012-08-30 | Polycrystalline silicon ingot furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361723A (en) * | 2013-07-29 | 2013-10-23 | 山东大海新能源发展有限公司 | Polysilicon ingot furnace with graphite solidifying assistant blocks |
Citations (2)
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| CN202107794U (en) * | 2011-07-25 | 2012-01-11 | 营口晶晶光电科技有限公司 | Polycrystalline furnace with detective device for preventing accidental fire striking |
| CN102425006A (en) * | 2011-12-30 | 2012-04-25 | 常州天合光能有限公司 | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method |
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2012
- 2012-08-30 CN CN2012103155715A patent/CN102776564A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202107794U (en) * | 2011-07-25 | 2012-01-11 | 营口晶晶光电科技有限公司 | Polycrystalline furnace with detective device for preventing accidental fire striking |
| CN102425006A (en) * | 2011-12-30 | 2012-04-25 | 常州天合光能有限公司 | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method |
Non-Patent Citations (1)
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| 韩凤麟: "《粉末冶金手册》", 30 June 2012, 冶金工业出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361723A (en) * | 2013-07-29 | 2013-10-23 | 山东大海新能源发展有限公司 | Polysilicon ingot furnace with graphite solidifying assistant blocks |
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Application publication date: 20121114 |