CN102769405B - Single-phase half-bridge three-level circuit and three-level converter - Google Patents
Single-phase half-bridge three-level circuit and three-level converter Download PDFInfo
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- CN102769405B CN102769405B CN201210224237.9A CN201210224237A CN102769405B CN 102769405 B CN102769405 B CN 102769405B CN 201210224237 A CN201210224237 A CN 201210224237A CN 102769405 B CN102769405 B CN 102769405B
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Abstract
The embodiment of the invention discloses a single-phase half-bridge three-level circuit, comprising a first direct current input end, a midpoint level end, a second direct current input end, a first switching device, a second switching device, a third switching device, a fourth switching device, a fifth switching device and a sixth switching device, as well as a fifth diode, a sixth diode, a seventh diode and an eighth diode, wherein the first end of the first switching device and the second end of the seventh diode are connected with the first direct current input end; the second end of the fourth switching device and the first end of the eighth diode are connected with the second direct current input end; the first switching device, the second switching device, the third switching device and the fourth switching device are respectively connected in parallel with the diodes in a reverse way; and a connection point between the second end of the fifth switching device and the first end of the sixth switching device is used as an alternating current output end. The embodiment of the invention also discloses a three-level converter with the single-phase half-bridge three-level circuit; in the occasion of needing to apply a unit power factor and a non-unit power factor simultaneously, the selection ranges of the switching devices are large; moreover, the loss of the switching devices can be decreased; the service lives of the switching devices can be prolonged; and the whole conversion efficiency can be improved.
Description
Technical field
The invention belongs to field of power electronics, be specifically related to a kind of single-phase half-bridge three-level circuit and comprise the three-level converter of this circuit.
Background technology
As shown in Figure 1, T1, T2, T3, T4 are switching device to traditional I font tri-level circuit, and D1, D2, D3, D4 are respectively the anti-paralleled diode of T1, T2, T3, T4, and D1, D2, D3, D4 are the body diode of switching device.As shown in Figure 2, in Fig. 2 a, electric current exports A through T1, T2 to interchange from M end to mode when I font tri-level circuit is operated in unity power factor; In Fig. 2 b, electric current exports A through T1, T2 to interchange from O end; In Fig. 2 c, electric current exports A from interchange and holds through T3, T4 to N; In Fig. 2 d, electric current exports A from interchange and holds through T3, D6 to O.As shown in Figure 3, in Fig. 3 a, electric current exports A from interchange and holds through T3, D6 to O mode when I font tri-level circuit is operated in non-unity power factor; In Fig. 3 b, electric current exports A from interchange and holds through D2, D1 to M; In Fig. 3 c, electric current exports A through D5, T2 to interchange from O end; In Fig. 3 d, electric current exports A through D4, D3 to interchange from N end.
The drive singal of each switching tube that above mode is corresponding as shown in Figure 4.At the first half cycle of alternating voltage, the drive singal of T1 and T3 is high frequency and complementary, T2 conducting, and T4 turns off; At the second half cycle of alternating voltage, the drive singal of T2 and T4 is high frequency and complementary, T3 conducting, and T1 turns off.
As can be seen from above-mentioned operational modal analysis and each switching tube drive singal, when I font tri-level circuit is operated in unity power factor, T2 and T3 is operated in power frequency state, and when I font tri-level circuit is operated in non-unity power factor, T2 and T3 is operated in high frequency state.Therefore, need the occasion of unity power factor and the application of non-unity power factor at the same time, there is following technical problem: during (1) selection T2 and T3, need switch performance and the conduction property of taking into account consideration device, under current semiconductor technology, can only to compromise during selection consideration, to cause in unity power factor work limitation rate not high; (2) because T2 and T3 will participate in work when unity power factor and non-unity power factor, loss is comparatively large, is unfavorable for heat radiation, decreases the useful life of device, reduce the conversion efficiency of circuit; (3) reactive current needs body diode D1, D2, D3, the D4 by T1, T2, T3, T4, and loss is comparatively large, is also unfavorable for that device dispels the heat, and decreases device useful life, limits the raising of switching frequency, also reduce the conversion efficiency of circuit.
Summary of the invention
In view of this, the object of the present invention is to provide the single-phase half-bridge three-level circuit solved the problems of the technologies described above and the three-level converter comprising this circuit, when needing the occasion of unity power factor and the application of non-unity power factor at the same time, switching device range of choice is large, and switching device loss can be reduced, extend the useful life of switching device, and improve overall transformation efficiency.
The invention provides a kind of single-phase half-bridge three-level circuit, comprise the first direct-flow input end, mid point level end, the second direct-flow input end, the first switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device and the 6th switching device, and the 5th diode, the 6th diode, the 7th diode, the 8th diode; The first end of the first switching device and the second termination first direct-flow input end of the 7th diode, the second end of the 4th switching device and the first termination second direct-flow input end of the 8th diode; Described mid point level end is connect after the first end of the 5th diode is connected with the second end of the 6th diode, second end of the second termination first switching device of the 5th diode and the first end of second switch device, second end of the first termination the 3rd switching device of the 6th diode and the first end of the 4th switching device; Second end of the first termination first switching device of the 5th switching device, the second end of the second termination the 3rd switching device of the 6th switching device; Second end of the 5th switching device is connected with the first end of the 6th switching device, and its tie point connects the first end of the 7th diode and the second end of the 8th diode; Second end of second switch device is connected with the first end of the 3rd switching device, is connected with flow blocking element between the second end of its tie point and the 5th switching device; First switching device, second switch device, the 3rd switching device and the 4th switching device respectively reverse parallel connection have the first diode, the second diode, the 3rd diode and the 4th diode; The tie point of the second end of the 5th switching device and the first end of the 6th switching device is as ac output end.
Further, in above-mentioned single-phase half-bridge three-level circuit, first switching device, the 4th switching device are mos field effect transistor, and second switch device, the 3rd switching device, the 5th switching device, the 6th switching device are igbt.
Further, in above-mentioned single-phase half-bridge three-level circuit, described flow blocking element is inductance.
Further, above-mentioned single-phase half-bridge three-level circuit has eight kinds of operation modes, is respectively: the first operation mode: electric current through the first direct-flow input end, the first switching device, second switch device, flow blocking element to ac output end; Second operation mode: electric current through mid point level end, the 5th diode, second switch device, flow blocking element to ac output end; 3rd operation mode: electric current is through ac output end, flow blocking element, the 3rd switching device, the 4th switching device to the second direct-flow input end; 4th operation mode: electric current through ac output end, flow blocking element, the 3rd switching device, the 6th diode to mid point level end; 5th operation mode: electric current through ac output end, the 6th switching device, the 6th diode to mid point level end; 6th operation mode: electric current is through ac output end, the 7th diode to the first direct-flow input end; 7th operation mode: electric current through mid point level end, the 5th diode, the 5th switching device to ac output end; 8th operation mode: electric current through the second direct-flow input end, the 8th diode to ac output end.
Further, above-mentioned single-phase half-bridge three-level circuit is provided with the first Switching Condition and second switch condition, under the first Switching Condition, first switching device and the 6th switching device are with the high-frequency pulse signal trigger action of complementation, second switch break-over of device, the 3rd, the 4th, the 5th switching device turns off; Under second switch condition, first, second, the 6th switching device turn off, the 3rd switch device conductive, the 4th switching device and the 5th switching device are with the high-frequency pulse signal trigger action of complementation.
Further, in above-mentioned single-phase half-bridge three-level circuit, the high-frequency pulse signal of described first switching device under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device under second switch condition; The high-frequency pulse signal of 5th switching device under second switch condition is identical with the high-frequency pulse signal of the 6th switching device under the first Switching Condition.
Further, above-mentioned high-frequency pulse signal is pwm signal.
Present invention also offers a kind of three-level converter, comprise the single-phase half-bridge three-level circuit that at least one is above-mentioned, first direct-flow input end of described single-phase half-bridge three-level circuit all connects the positive pole of DC power supply, second direct-flow input end all connects the negative pole of DC power supply, and mid point level end all connects the midpoint potential end of DC power supply.
Further, above-mentioned three-level converter also comprises the positive pole that is connected to DC power supply with between midpoint potential end and be connected to the identical electric capacity of parameter between midpoint potential end and the negative pole of DC power supply.
Further, filter circuit is connected with between the ac output end of described each single-phase half-bridge three-level circuit and AC load or electrical network.
Beneficial effect of the present invention is: by constructing the idle branch road be made up of the 5th switching device, the 6th switching device, the 7th diode, the 8th diode in conventional tri-level circuit, path of gaining merit is separated with idle path, the range of choice of switching device is large, reduce the switching loss of circuit and conduction loss and be conducive to device heat radiation, extend the useful life of device, improve the overall transformation efficiency of circuit.Further, the 7th diode, the 8th diode are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of prior art;
Fig. 2 a-2d is the current direction schematic diagram of circuit working shown in Fig. 1 when the unity power factor;
Fig. 3 a-3d is the current direction schematic diagram of circuit working shown in Fig. 1 when the non-unity power factor;
Fig. 4 is the drive singal figure of the breaker in middle of circuit shown in Fig. 1 device;
Fig. 5 is the schematic diagram of single-phase half-bridge three-level circuit module;
Fig. 6 is a kind of circuit diagram of the first embodiment of three-level converter;
Fig. 7 a-7d is the current direction schematic diagram of single-phase half-bridge three-level circuit when working in unity power factor;
Fig. 8 a-8d is the current direction schematic diagram of single-phase half-bridge three-level circuit when working in non-unity power factor;
Fig. 9 is the drive singal schematic diagram of single-phase half-bridge three-level circuit breaker in middle device;
Figure 10 is the another kind of circuit diagram of the first embodiment of three-level converter;
Figure 11 is the circuit diagram of the second embodiment of three-level converter;
Figure 12 is the circuit diagram of the 3rd embodiment of three-level converter.
First direct-flow input end M1 mid point level end O second direct-flow input end N1
First switching device RT1 second switch device R T2 the 3rd switching device RT3
4th switching device RT4 the 5th switching device RT11 the 6th switching device RT22
5th diode RD5 the 6th diode RD6 ac output end AC
7th diode RD7 the 8th diode RD8 first diode RD1
Second diode RD2 the 3rd diode RD3 the 4th diode RD4
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
With reference to Fig. 5, the circuit diagram of single-phase half-bridge three-level circuit disclosed in the embodiment of the present invention.Described single-phase half-bridge three-level circuit comprises the first direct-flow input end M1, mid point level end O, second direct-flow input end N1, be connected on the first switching device RT1, second switch device R T2 between the first direct-flow input end M1 and the second direct-flow input end N1, the 3rd switching device RT3 and the 4th switching device RT4 successively, the 5th switching device RT11 be connected in series and the 6th switching device RT22, with the 5th diode RD5 be connected in series and the 6th diode RD6, and the 7th diode RD7 be connected in series and the 8th diode RD8.
Wherein, second end of the first end of the first switching device RT1 and the second termination first direct-flow input end M1 of the 7th diode RD7, the 4th switching device RT4 and the first termination second direct-flow input end N1 of the 8th diode RD8; Described mid point level end O is met after the first end of the 5th diode RD5 is connected with second end of the 6th diode RD6, second end of the second termination first switching device RT1 of the 5th diode RD5 and the first end of second switch device R T2, second end of the first termination the 3rd switching device RT3 of the 6th diode RD6 and the first end of the 4th switching device RT4; Second end of the first termination first switching device RT1 of the 5th switching device RT11, second end of the second termination the 3rd switching device RT3 of the 6th switching device RT22; Second end of the 5th switching device RT11 is connected with the first end of the 6th switching device RT22, and its tie point connects the first end of the 7th diode RD7 and second end of the 8th diode RD8; Second end of second switch device R T2 is connected with the first end of the 3rd switching device RT3, is connected with flow blocking element LR1 between second end of its tie point and the 5th switching device RT11; First switching device RT1, second switch device R T2, the 3rd switching device RT3 and the 4th switching device RT4 respectively reverse parallel connection have the first diode RD1, the second diode RD2, the 3rd diode RD3, the 4th diode RD4; The tie point of second end of the 5th switching device RT11 and the first end of the 6th switching device RT22 is as ac output end AC.
The single-phase half-bridge three-level circuit accessible site of Fig. 5 is chip, the first end of the first switching device RT1 is as the first direct-flow input end M1, second end of the 4th switching device RT4 is as the second direct-flow input end N1, and the common port of the 5th diode RD5 and the 6th diode RD6 is as mid point level end O.
It should be noted that, anti-parallel diodes RD1, RD2, RD3, RD4 of first switching device RT1, second switch device R T2, the 3rd switching device RT3 and the 4th switching device RT4 can be the diodes that switching device carries, and also can be independently diodes.
Compared with prior art, the embodiment of the present invention by constructing the idle branch road be made up of the 5th switching device RT11, the 6th switching device RT22, the 7th diode RD7, the 8th diode RD8 in conventional tri-level circuit, path of gaining merit is separated with idle path, the range of choice of switching device is large, reduce the switching loss of circuit and conduction loss and be conducive to device heat radiation, extend the useful life of device, improve the overall transformation efficiency of circuit.Further, the 7th diode RD7, the 8th diode RD8 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
In above-mentioned single-phase half-bridge three-level circuit, first switching device RT1, the 4th switching device RT4 are mos field effect transistor (MOFET), second switch device R T2, the 3rd switching device RT3, the 5th switching device RT11, the 6th switching device RT22 are igbt (IGBT).It should be noted that, the 5th switching device RT11, the 6th switching device RT22 are not all with anti-paralleled diode.
In above-mentioned single-phase half-bridge three-level circuit, the first end of the first switching device RT1, the 4th switching device RT4 is the drain electrode of MOFET, and second end of the first switching device RT1, the 4th switching device RT4 is the source electrode of MOFET; The first end of second switch device R T2, the 3rd switching device RT3, the 5th switching device RT11, the 6th switching device RT22 is the collector electrode of IGBT, and the second end is the emitter of IGBT.The first end of diode is anode, the second end is negative electrode.
See Fig. 5, in above-mentioned single-phase half-bridge three-level circuit, flow blocking element LR1 is inductance, the value of LR1 is less, other can also be adopted in reality can to control the electric component of current direction, block electric current and flow through the second diode RD2, the first diode RD1 to the first direct-flow input end M1 from ac output end AC.
See Fig. 7 and Fig. 8, above-mentioned single-phase half-bridge three-level circuit has eight kinds of operation modes, Fig. 7 a-7d is the current direction schematic diagram of single-phase half-bridge three-level circuit when working in unity power factor, and corresponding is first, second, third, fourth operation mode respectively; Fig. 8 a-8d is the current direction schematic diagram of single-phase half-bridge three-level circuit when working in non-unity power factor, and corresponding is the 5th, the 6th, the 7th, the 8th operation mode respectively;
First operation mode: electric current extremely exchanges output terminals A C through the first direct-flow input end M1, the first switching device RT1, second switch device R T2, flow blocking element LR1;
Second operation mode: electric current extremely exchanges output terminals A C through mid point level end O, the 5th diode RD5, second switch device R T2, flow blocking element LR1;
3rd operation mode: electric current is through ac output end AC, flow blocking element LR1, the 3rd switching device RT3, the 4th switching device RT4 to the second direct-flow input end N1;
4th operation mode: electric current through ac output end AC, flow blocking element LR1, the 3rd switching device RT 3, the 6th diode RD6 to mid point level end O;
5th operation mode: electric current through ac output end AC, the 6th switching device RT22, the 6th diode RD6 to mid point level end O;
6th operation mode: electric current is through ac output end AC, the 7th diode RD7 to the first direct-flow input end M1;
7th operation mode: electric current extremely exchanges output terminals A C through mid point level end O, the 5th diode RD5, the 5th switching device RT11;
8th operation mode: electric current extremely exchanges output terminals A C through the second direct-flow input end N1, the 8th diode RD8.
Fig. 9 discloses the drive singal figure of single-phase half-bridge three-level circuit breaker in middle device; Above-mentioned single-phase half-bridge three-level circuit is provided with the first Switching Condition and second switch condition, under the first Switching Condition, first switching device RT1 and the 6th switching device RT22 is with the high-frequency pulse signal trigger action of complementation, second switch device R T2 conducting, the 3rd switching device RT3, the 4th switching device RT4, the 5th switching device RT11 turn off; Under second switch condition, the first switching device RT1, second switch device R T2, the 6th switching device RT22 turn off, the 3rd switching device RT3 conducting, and the 4th switching device RT4 and the 5th switching device RT11 is with the high-frequency pulse signal trigger action of complementation.
It should be noted that, in the present embodiment, the positive half cycle of what the first Switching Condition was corresponding is ac output voltage, the negative half period of what second switch condition was corresponding is ac output voltage.
Further, in above-mentioned single-phase half-bridge three-level circuit, the high-frequency pulse signal of described first switching device RT1 under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device RT4 under second switch condition; The high-frequency pulse signal of 5th switching device RT11 under second switch condition is identical with the high-frequency pulse signal of the 6th switching device RT22 under the first Switching Condition.
Concrete, above-mentioned high-frequency pulse signal is pwm signal, can be such as the pulse signal between a few KHZ to tens KHZ in scope.In reality, pulse signal comparatively can be generated by sinusoidal modulation wave and carrier wave ratio.
Compared with prior art, the the first switching device RT1 being operated in high frequency and the 4th switching device RT4 of the single-phase half-bridge three-level circuit of the embodiment of the present invention select the good MOSFET of switch performance, and the second switch device R T2 and the 3rd switching device RT3 that are operated in power frequency select the good IGBT of conduction property, and structure is by the 5th switching device RT11, 6th switching device RT22, the idle branch road that 7th diode RD7 and the 8th diode RD8 forms, 5th switching device RT11 and the 6th switching device RT22 selects the good IGBT of conduction property, make when requiring single-phase half-bridge three-level circuit to operate in the occasion of non-unity power factor, reactive current no longer flows through second switch device R T2, 3rd switching device RT3 and anti-paralleled diode RD2 thereof, RD3, and first anti-paralleled diode RD1 and RD4 of switching device RT1 and the 4th switching device RT4, but flow through the 5th switching device RT11, 6th switching device RT22, 7th diode RD7 and the 8th diode RD8, thus meritorious path is effectively separated with idle path, make the range of choice of switching device large, reduce the switching loss of circuit and conduction loss and be conducive to switching device heat radiation, extend the useful life of switching device, improve the overall transformation efficiency of circuit.Further, the 7th diode RD7, the 8th diode RD8 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
The embodiment of the invention also discloses the three-level converter applying above-mentioned single-phase half-bridge three-level circuit, Fig. 6 gives the circuit diagram of the first embodiment of three-level converter, comprise an above-mentioned single-phase half-bridge three-level circuit, first direct-flow input end M1 of single-phase half-bridge three-level circuit connects the positive pole of DC power supply, second direct-flow input end N1 connects the negative pole of DC power supply, and mid point level end O connects the midpoint potential end of DC power supply.The midpoint potential of DC power supply by accessing the identical voltage source V of voltage 1 respectively between the first direct-flow input end M1 and mid point level end O, between mid point level end O and the second direct-flow input end N1, V2 constructs.Electrical network or AC load are connected between the ac output end AC of single-phase half-bridge three-level circuit and mid point level end O.
See Figure 10, the voltage source V 1 that above-mentioned two voltages are identical, V2 also can be realized by the electric capacity that two parameters are identical, i.e. the first electric capacity C1 and the second electric capacity C2 in Figure 10.
Further, please also refer to Fig. 6 and Figure 10, between the ac output end AC of this single-phase half-bridge three-level circuit and AC load or electrical network, be connected with filter circuit.Described filter circuit comprises the first inductance L 1, and actual can also be the filter circuit of LC or LCL form.
The operation mode of this three-level converter is identical with the operation mode of single-phase half-bridge three-level circuit, repeats no more herein.
Figure 11 gives the circuit diagram of the second embodiment of three-level converter, comprise two above-mentioned single-phase half-bridge three-level circuit, i.e. the first single-phase half-bridge three-level circuit and the second single-phase half-bridge three-level circuit, the negative pole that the first direct-flow input end M1 all connects the positive pole of DC power supply, the second direct-flow input end N1 all connects DC power supply of first, second single-phase half-bridge three-level circuit described, mid point level end O all connect the midpoint potential end of DC power supply.The midpoint potential of DC power supply by accessing the identical voltage source V of voltage 1 respectively between the first direct-flow input end M1 and mid point level end O, between mid point level end O and the second direct-flow input end N1, V2 constructs.Electrical network or AC load are connected between the ac output end AC of the first single-phase half-bridge three-level circuit and the second single-phase half-bridge three-level circuit.All the other are with the first embodiment of three-level converter.
Figure 12 gives the circuit diagram of the 3rd embodiment of three-level converter, comprise three above-mentioned single-phase half-bridge three-level circuit, i.e. the first single-phase half-bridge three-level circuit, the second single-phase half-bridge three-level circuit and the 3rd single-phase half-bridge three-level circuit, first direct-flow input end M1 of described single-phase half-bridge three-level circuit all connects the positive pole of DC power supply, second direct-flow input end N1 all connects the negative pole of DC power supply, and mid point level end O all connects the midpoint potential end of DC power supply.The midpoint potential of DC power supply by accessing the identical voltage source V of voltage 1 respectively between the first direct-flow input end M1 and mid point level end O, between mid point level end O and the second direct-flow input end N1, V2 constructs.The ac output end AC of first, second, third single-phase half-bridge three-level circuit connects three phase network or AC load.All the other are with the first embodiment of three-level converter.
Compared with prior art, the the first switching device RT1 and the 4th switching device RT4 that are operated in high frequency in the three-level converter of the embodiment of the present invention select the good MOSFET of switch performance, and the second switch device R T2 and the 3rd switching device RT3 that are operated in power frequency select the good IGBT of conduction property, and structure is by the 5th switching device RT11, 6th switching device RT22, the idle branch road that 7th diode RD7 and the 8th diode RD8 forms, 5th switching device RT11 and the 6th switching device RT22 selects the good IGBT of conduction property, make when requiring single-phase half-bridge three-level circuit to operate in the occasion of non-unity power factor, reactive current no longer flows through second switch device R T2, 3rd switching device RT3 and anti-paralleled diode RD2 thereof, RD3, and first anti-paralleled diode RD1 and RD4 of switching device RT1 and the 4th switching device RT4, but flow through the 5th switching device RT11, 6th switching device RT22, 7th diode RD7 and the 8th diode RD8, thus meritorious path is effectively separated with idle path, make the range of choice of switching device large, reduce the switching loss of circuit and conduction loss and be conducive to switching device heat radiation, extend the useful life of switching device, improve the overall transformation efficiency of circuit.Further, the 7th diode RD7, the 8th diode RD8 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Claims (9)
1. a single-phase half-bridge three-level circuit, it is characterized in that: comprise the first direct-flow input end, mid point level end, the second direct-flow input end, the first switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device and the 6th switching device, and the 5th diode, the 6th diode, the 7th diode, the 8th diode;
The first end of the first switching device and the negative electrode of the 7th diode connect the first direct-flow input end, and the second end of the 4th switching device and the anode of the 8th diode connect the second direct-flow input end;
Described mid point level end is connect after the anode of the 5th diode is connected with the negative electrode of the 6th diode, the negative electrode of the 5th diode connects the second end of the first switching device and the first end of second switch device, and the anode of the 6th diode connects the second end of the 3rd switching device and the first end of the 4th switching device;
Second end of the first termination first switching device of the 5th switching device, the second end of the second termination the 3rd switching device of the 6th switching device; Second end of the 5th switching device is connected with the first end of the 6th switching device, and its tie point connects the anode of the 7th diode and the negative electrode of the 8th diode;
Second end of second switch device is connected with the first end of the 3rd switching device, is connected with flow blocking element between the second end of its tie point and the 5th switching device;
First switching device, second switch device, the 3rd switching device and the 4th switching device respectively reverse parallel connection have the first diode, the second diode, the 3rd diode and the 4th diode;
The tie point of the second end of the 5th switching device and the first end of the 6th switching device is as ac output end;
Be provided with the first Switching Condition and second switch condition, under described first Switching Condition, the first switching device and the 6th switching device with the high-frequency pulse signal trigger action of complementation, second switch break-over of device, the 3rd, the 4th, the 5th switching device turn off; Under described second switch condition, first, second, the 6th switching device turn off, the 3rd switch device conductive, the 4th switching device and the 5th switching device are with the high-frequency pulse signal trigger action of complementation.
2. single-phase half-bridge three-level circuit according to claim 1, is characterized in that: the high-frequency pulse signal of described first switching device under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device under second switch condition; The high-frequency pulse signal of 5th switching device under second switch condition is identical with the high-frequency pulse signal of the 6th switching device under the first Switching Condition.
3. single-phase half-bridge three-level circuit according to claim 2, it is characterized in that: described first switching device, the 4th switching device are mos field effect transistor, second switch device, the 3rd switching device, the 5th switching device, the 6th switching device are igbt.
4. single-phase half-bridge three-level circuit according to claim 2, is characterized in that: described flow blocking element is inductance.
5. the single-phase half-bridge three-level circuit according to any one of Claims 1-4, is characterized in that: comprise eight kinds of operation modes, be respectively:
First operation mode: electric current through the first direct-flow input end, the first switching device, second switch device, flow blocking element to ac output end;
Second operation mode: electric current through mid point level end, the 5th diode, second switch device, flow blocking element to ac output end;
3rd operation mode: electric current is through ac output end, flow blocking element, the 3rd switching device, the 4th switching device to the second direct-flow input end;
4th operation mode: electric current through ac output end, flow blocking element, the 3rd switching device, the 6th diode to mid point level end;
5th operation mode: electric current through ac output end, the 6th switching device, the 6th diode to mid point level end;
6th operation mode: electric current is through ac output end, the 7th diode to the first direct-flow input end;
7th operation mode: electric current through mid point level end, the 5th diode, the 5th switching device to ac output end;
8th operation mode: electric current through the second direct-flow input end, the 8th diode to ac output end.
6. a three-level converter, it is characterized in that: comprise the single-phase half-bridge three-level circuit at least one claim 1 to 5 described in any one, first direct-flow input end of described single-phase half-bridge three-level circuit all connects the positive pole of DC power supply, second direct-flow input end all connects the negative pole of DC power supply, and mid point level end all connects the midpoint potential end of DC power supply.
7. three-level converter according to claim 6, is characterized in that: the midpoint potential end of described DC power supply by respectively between the first direct-flow input end and mid point level end, access the identical voltage source of voltage between mid point level end and the second direct-flow input end and construct.
8. three-level converter according to claim 7, is characterized in that: the voltage source that described voltage is identical is the electric capacity that parameter is identical.
9. the three-level converter according to any one of claim 6 to 8, is characterized in that, is connected with filter circuit between the ac output end of described single-phase half-bridge three-level circuit and AC load or electrical network.
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CN101599713A (en) * | 2009-07-07 | 2009-12-09 | 华中科技大学 | A kind of three-level inverter of single-phase mixed bridge |
CN102005958A (en) * | 2010-11-25 | 2011-04-06 | 河北工业大学 | Photovoltaic grid-connected three-level inverter |
CN201869116U (en) * | 2010-12-07 | 2011-06-15 | 深圳市禾望电气有限公司 | Three-level circuit and converter |
CN102437761A (en) * | 2011-10-24 | 2012-05-02 | 阳光电源股份有限公司 | Single-phase full bridge three-level inverter and three-phase three-level inverter |
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AU2001287710A1 (en) * | 2000-09-13 | 2002-03-26 | Abb Research Ltd | Controlling and regulating method for a three-level power converter having active clamping switches, and a device therefor |
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CN101599713A (en) * | 2009-07-07 | 2009-12-09 | 华中科技大学 | A kind of three-level inverter of single-phase mixed bridge |
CN102005958A (en) * | 2010-11-25 | 2011-04-06 | 河北工业大学 | Photovoltaic grid-connected three-level inverter |
CN201869116U (en) * | 2010-12-07 | 2011-06-15 | 深圳市禾望电气有限公司 | Three-level circuit and converter |
CN102437761A (en) * | 2011-10-24 | 2012-05-02 | 阳光电源股份有限公司 | Single-phase full bridge three-level inverter and three-phase three-level inverter |
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