CN102768907A - Solid state capacitor and manufacturing device thereof - Google Patents
Solid state capacitor and manufacturing device thereof Download PDFInfo
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- CN102768907A CN102768907A CN2011101200092A CN201110120009A CN102768907A CN 102768907 A CN102768907 A CN 102768907A CN 2011101200092 A CN2011101200092 A CN 2011101200092A CN 201110120009 A CN201110120009 A CN 201110120009A CN 102768907 A CN102768907 A CN 102768907A
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Abstract
The invention discloses a solid state capacitor and a manufacturing device thereof. The manufacturing method comprises the following steps of: forming adhesion layers on an insulation substrate; arranging metal leads of the solid state capacitor at two adhesion layers in a spanning manner; covering a conductive layer on the adhesion layers and the metal leads of the solid state capacitor; carrying out a step of formation; forming a hydrophobic layer and a conductive unit; carrying out a step of cutting; and carrying out a step of packaging and a step of manufacturing an one-end electrode. With the adoption of the manufacturing method, the productivity efficiency of a capacitor assembly can be improved; in addition, the capacitor assembly manufactured by using the manufacturing device needs no traditional lead brackets; a thinned assembly which meets the requirements of minimized 3C products can be manufactured; and the electric property can also meet the requirements.
Description
Technical field
The invention relates to a kind of electric capacity and preparation method thereof, refer to a kind of solid capacitor and preparation method thereof especially.
Background technology
Capacitor is broadly divided into electrolytic capacitor and non-polarized capacitor according to its function, and electrolytic capacitor can be divided into aluminium matter and tantalum matter two big classes again according to anodal material; Form according to electrolyte is classified, and two kinds of liquid electrolytic capacitor and solid electrolytic capacitors are then arranged.In general, the characteristic of tantalum condenser is that temperature tolerance is wide, no inductive reaches better leakage current characteristic.
The manufacture method of tradition tantalum matter solid-state capacitor mainly is to utilize mould tantalum matter metal powder to be pressed into the electrode structure of capacitor; Yet; The speed of this kind manufacture method is slower; One group of mould only is used to make single capacitor usually, and therefore, the prouctiveness of capacitor is restricted and can't satisfies the demand of volume production.
In addition; In the existing tantalum matter solid-state capacitor structure, internal material need could link with the printed board circuit of outside through lead frame, so not only makes technology more complicated; The volume of assembly also can be bigger, and can't meet the existing compact demand of electronic product; Moreover aforementioned structure has also increased the interface impedance that lead frame and tantalum matter solid capacitor structure contact are produced, and has introduced the transfer impedance of lead frame itself, this two all can cause the rising of the ESR value of capacitor.
Summary of the invention
The object of the present invention is to provide a kind of solid capacitor and preparation method thereof, the technology of manufacture method of the present invention mass capable of using is once produced a plurality of capacitance components, so can significantly improve prouctiveness.
The embodiment of the invention provides a kind of manufacture method of solid capacitor, may further comprise the steps:
Step 1 a: insulated substrate is provided, has at least two capacitor regions on it;
Step 2: first forming step is provided, to have the adhesion layer of solid capacitor metal respectively at formation one on this two capacitor regions;
Step 3: a plurality of solid capacitor plain conductors are placed this adhesion layer on this two capacitor regions;
Step 4: second forming step is provided, and to have the conductive layer of solid capacitor metal respectively at formation one on this two capacitor regions, wherein this conductive layer is covered in this adhesion layer and those solid capacitor plain conductors;
Step 5: provide an additional conductive unit to change into step to carry out one; Wherein this additional conductive unit is electrically connected at those solid capacitor plain conductors, transforms into a dielectric structure with the surface with those solid capacitor plain conductors on this two capacitor regions and this conductive layer;
Step 6: moulding one hydrophobic layer is on those solid capacitor plain conductors, and moulding one conductive unit is to be coated on this dielectric structure;
Step 7: carry out a cutting step, to distinguish this two capacitor regions;
Step 8: carry out an encapsulation step;
Step 9: carry out a termination electrode making step.
Further, this solid capacitor metal is tantalum, niobium or both combinations.
Further, in the step that an additional conductive unit is provided, utilize sputtering way to form an additional conductive metal level, perhaps utilize a Conductive gauge to be electrically connected at those solid capacitor plain conductors to be electrically connected at those solid capacitor plain conductors.
Further, this changes into step and utilizes electrochemical method that the solid capacitor metal on the surface of those solid capacitor plain conductors and this conductive layer is transformed into oxide to form described dielectric structure.
Further, after second forming step, include a sintering step.
The embodiment of the invention provides a kind of solid capacitor, comprising: an insulated substrate; Be formed in the adhesion layer on this insulated substrate with solid capacitor metal; Have a plurality of solid capacitor plain conductors and a conductive layer on it; Adhesion layer and solid capacitor plain conductor can form one can anodised metal sintering layer; And conductive layer can be connected in this can anodised metal sintering layer to draw positive electrode; The surface of those solid capacitor plain conductors and this conductive layer transforms and forms a dielectric structure (for example oxide layer); This adhesion layer with solid capacitor metal is that part is covered on this insulated substrate, and those solid capacitor plain conductors are to be located on this adhesion layer with solid capacitor metal and this insulated substrate, and this conductive layer is covered on this adhesion layer with solid capacitor metal and those solid capacitor plain conductors to draw positive electrode; One is coated on the conductive unit of this dielectric structure, for example utilizes the electric conducting material of one layer or more to be attached to form on the electroconductive polymer layer to draw negative electrode; Be formed in the hydrophobic layer on those solid capacitor plain conductors; One encapsulated layer, it coats the central portion of this solid capacitor and exposes the both ends of this solid capacitor; And two end electrodes, be located at the both ends of this solid capacitor respectively.
The embodiment of the invention provides a kind of manufacture method of solid capacitor, may further comprise the steps:
Step 1 a: insulated substrate is provided, has at least two capacitor regions on it;
Step 2: first forming step is provided, to have the adhesion layer of carbon respectively at formation one on this two capacitor regions;
Step 3: a plurality of solid capacitor plain conductors are placed this adhesion layer on this two capacitor regions;
Step 4: second forming step is provided, and to have the conductive layer of solid capacitor metal respectively at formation one on this two capacitor regions, wherein these conduction series of strata are covered in this adhesion layer and those solid capacitor plain conductors;
Step 5: provide an additional conductive unit to change into step to carry out one; Wherein this additional conductive unit is electrically connected at those solid capacitor plain conductors, transforms into a dielectric structure with the surface with those solid capacitor plain conductors on this two capacitor regions and this conductive layer;
Step 6: moulding one hydrophobic layer is on those solid capacitor plain conductors, and moulding one conductive unit is to be coated on this dielectric structure;
Step 7: carry out a cutting step, to distinguish this two capacitor regions;
Step 8: carry out an encapsulation step;
Step 9: carry out a termination electrode making step.
Further, this solid capacitor metal is tantalum, niobium or both combinations.
Further, in the step that an additional conductive unit is provided, utilize sputtering way to form an additional conductive metal level, perhaps utilize a Conductive gauge to be electrically connected at those solid capacitor plain conductors to be electrically connected at those solid capacitor plain conductors.
Further, this changes into step and utilizes electrochemical method that the solid capacitor metal on the surface of those solid capacitor plain conductors and this conductive layer is transformed into oxide to form described dielectric structure.
Further, after second forming step, include a sintering step, and this adhesion layer with carbon produces gasification in this sintering step.
The embodiment of the invention provides a kind of solid capacitor, comprising: an insulated substrate; Be formed in a plurality of solid capacitor plain conductors and a conductive layer on this insulated substrate; The solid capacitor plain conductor can be one can anodised metal sintering layer; And conductive layer can be connected in this can anodised metal sintering layer; The surface of those solid capacitor plain conductors and this conductive layer transforms and forms a dielectric structure (oxide layer); Those solid capacitor plain conductors are located on this insulated substrate, and these conduction series of strata are covered on this insulated substrate and those solid capacitor plain conductors to draw positive electrode; One is coated on the conductive unit of this dielectric structure, for example utilizes the electric conducting material of one layer or more to be attached to form on the electroconductive polymer layer to draw negative electrode; Be formed in the hydrophobic layer on those solid capacitor plain conductors; One encapsulated layer, it coats the central portion (being positive electrode, oxide layer, the formed capacitance structure of negative electrode) of this solid capacitor and exposes the both ends of this solid capacitor; And two end electrodes, be located at the both ends of this solid capacitor respectively.
The present invention has following useful effect: the present invention can improve the prouctiveness of capacitance component.In addition, the capacitance component of made of the present invention does not need the conventional wires frame, the slimming assembly that meets compact 3C Product demand can be provided, and electric characteristics also can meet demand.
For enabling further to understand characteristic of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing, yet appended graphic reference and the explanation usefulness of only providing not is to be used for to the present invention's limitr in addition.
Description of drawings
Figure 1A is the front view of the insulated substrate of manufacture method of the present invention.
Figure 1B is the end view of the insulated substrate of manufacture method of the present invention.
Fig. 2 A is the front view of first forming step of manufacture method of the present invention.
Fig. 2 B is the end view of first forming step of manufacture method of the present invention.
Fig. 3 A is the front view of the moulding solid capacitor plain conductor of manufacture method of the present invention.
Fig. 3 B is the end view of the moulding solid capacitor plain conductor of manufacture method of the present invention.
Fig. 4 A is the front view of second forming step of manufacture method of the present invention.
Fig. 4 B is the end view of second forming step of manufacture method of the present invention.
Fig. 5 A is the front view that an additional conductive unit is provided of manufacture method of the present invention.
Fig. 5 B is the end view that an additional conductive unit is provided of manufacture method of the present invention.
Fig. 6 A is the moulding hydrophobic layer of manufacture method of the present invention and the front view of conductive unit.
Fig. 6 B is the moulding hydrophobic layer of manufacture method of the present invention and the end view of conductive unit.
Fig. 7 is the sketch map of the cutting step of manufacture method of the present invention.
Fig. 8 is the sketch map of the encapsulation step of manufacture method of the present invention.
Fig. 9 is the sketch map of the termination electrode making step of manufacture method of the present invention.
Figure 10 is the sketch map of the solid capacitor of second embodiment of the invention.
Wherein, description of reference numerals is following:
1 insulated substrate
10 capacitor regions
The 11A adhesion layer
11B solid capacitor plain conductor
The 11C conductive layer
12 hydrophobic layers
13 conductive units
14 encapsulated layers
15 termination electrodes
21 additional conductive unit
The SI Cutting Road
Embodiment
The present invention proposes a kind of solid capacitor and preparation method thereof, and manufacture method proposed by the invention can be reached batch effect of changing production significantly to enhance productivity; In addition, solid capacitor proposed by the invention has excellent electric characteristics.
Embodiments of the invention describe with tantalum (Ta) matter solid capacitor, but not as limit.
The manufacture method of solid capacitor proposed by the invention may further comprise the steps.Please earlier with reference to Figure 1A, Figure 1B: an insulated substrate 1 is provided; And insulated substrate 1 has two capacitor regions 10; For example utilize Cutting Road SI to distinguish aforesaid two capacitor regions 10, be used to make the core texture of capacitor on the capacitor regions 10, and through after the step hereinafter described; All can produce a capacitor on each capacitor regions 10; So manufacture method of the present invention can directly design a plurality of capacitor regions 10 at insulated substrate 1, in order to the carrying out of subsequent technique, so the present invention can solve traditional handicraft receive mould restriction and only can be one by one, single problem of producing capacitor.In addition, insulated substrate 1 can be the substrate of a ceramic substrate or any insulating material.
Next, please refer to Fig. 2 A, Fig. 2 B; Carry out first forming step; To have the adhesion layer 11A of solid capacitor metal respectively at formation one on two capacitor regions 10; In this specific embodiment, the material (being the solid capacitor metal) that will have tantalum (Ta) matter is coated on two capacitor regions 10 with the mode of printing; The adhesion layer 11A that accomplishes that is coated with can provide sticking together of follow-up structure sheaf on the one hand and be connected, and on the other hand, the tantalum material of institute's blending also can provide the capacitive function of product among the adhesion layer 11A.Aforesaid solid capacitor metal also can be mixing of niobium (Nb), tantalum and niobium or the like.
Please refer to Fig. 3 A, Fig. 3 B: a plurality of solid capacitor plain conductor 11B are placed the adhesion layer 11A on this two capacitor regions 10; In this specific embodiment; Three sections tantalums (Ta) matter lead striden be located on the two adhesion layer 11A, and utilize the tackness of adhesion layer 11A and be fixed on aforesaid two capacitor regions 10.
Please refer to Fig. 4 A, Fig. 4 B; Second forming step is provided, and to have the conductive layer 11C of solid capacitor metal respectively at formation one on this two capacitor regions 10, wherein this conductive layer 11C is covered in this adhesion layer 11A and those solid capacitor plain conductors 11B.In this specific embodiment, the material (like tantalum matter metal dust) that will have tantalum matter is coated with the mode of printing and is covered in adhesion layer 11A and the solid capacitor plain conductor 11B on each capacitor regions 10.
And behind second forming step, more can comprise a sintering step, above-mentioned trilaminate material being fixed forming the structure of tool intensity, and it is linked each other and electrically conduct.
Please refer to Fig. 5 A, Fig. 5 B; Provide an additional conductive unit 21 to change into step to carry out one; In this step; Those solid capacitor plain conductor 11B on this two capacitor regions 10 and the surface of this conductive layer 11C can transform into a dielectric structure (because dielectric structure is merely the oxide layer on surface, for graphic succinct, be not shown in graphic in); Particularly; In this step, mainly the material (being the solid capacitor metal) with tantalum (Ta) matter on the surface of aforementioned three-decker changes into metal oxide, like the tantalum pentoxide metal oxide layer.
In one embodiment; Sputtering way capable of using forms an additional conductive metal level (being aforesaid additional conductive unit 21); Conductive layer such as tantalum or nickel for example; This additional conductive metal level is haply along Cutting Road SI moulding; To be electrically connected at those solid capacitor plain conductors 11B, then utilize the additional conductive metal level to carry out electrochemical method, transform into tantalum pentoxide to form described dielectric structure with tantalum matter metal dust with the surface of those solid capacitor plain conductor 11B and this conductive layer 11C.
In another embodiment; Utilize a Conductive gauge (being aforesaid additional conductive unit 21) to fix and be electrically connected at those solid capacitor plain conductors 11B; Then utilize Conductive gauge to carry out electrochemical method, transform into tantalum pentoxide to form described dielectric structure with tantalum matter metal dust with the surface of those solid capacitor plain conductor 11B and this conductive layer 11C.
After above-mentioned steps; The tantalum material of adhesion layer 11A, those solid capacitor plain conductor 11B and this conductive layer 11C promptly can be used as the anode of capacitor; And formed tantalum pentoxide dielectric structure is the dielectric layer in the capacitor; And because additional conductive unit 21 belongs to employed instrument in the electrochemical process of assisting character, so in follow-up graphic and explanation, will omit; Follow-up step is the negative electrode of moulding capacitor then, and forms encapsulation and termination electrode.
Please refer to Fig. 6 A, Fig. 6 B; Next step moulding one hydrophobic layer 12 is on this additional conductive unit 21; In this specific embodiment, hydrophobic layer 12 is roughly along Cutting Road SI moulding, and its main purpose is to prevent that the structure in the capacitor is influenced because of follow-up wet technology; Then; Moulding one conductive unit 13 is to be coated on this dielectric structure (being the surface oxide layer of solid capacitor plain conductor 11B and conductive layer 11C), and in the present embodiment, conductive unit 13 can be by conducting polymer; As gathering 3,4-vinyl dioxy thiophene (PEDOT) material, carbon paste, elargol etc. constitute; Particularly, gather 3,4-vinyl dioxy thiophene (PEDOT) material can form the electroconductive polymer polyelectrolyte floor, and carbon paste, elargol etc. then can form the negative electrode of capacitor.
Please refer to Fig. 7; Next step is a cutting step, particularly, this step laser cutting capable of using cooperate instrument such as cutter along Cutting Road SI with aforesaid two capacitor regions 10 and on structure sheaf be cut into single assembly; For example earlier go out stria with laser cutting; Cut along stria with cutter again, and this step is accomplished the main member in the capacitor in fact after accomplishing, like the dielectric structure of anode, negative electrode and insulation.The structure that following steps mainly encapsulate and electrode is drawn.
Please refer to Fig. 8, next step carries out an encapsulation step, with moulding one encapsulated layer 14 coat cutting and separating each capacitor regions 10 and on structure.As shown in the figure; This step can use materials such as insulating resin as encapsulated layer 14; It coats aforesaid conductive unit 13, solid capacitor plain conductor 11B and this conductive layer 11C or the like, to reach effects such as protection assembly, moisture-resistant gas, in addition; Encapsulated layer 14 can expose aforesaid anode and negative electrode, carries out drawing of electrode in order to follow-up.
Please cooperate Fig. 9; Carry out a termination electrode making step, this step is mainly at the exposed anode of encapsulated layer 14 and part (being the both ends of solid capacitor) the manufacturing terminal electrode 15 of negative electrode, in specific embodiment; Termination electrode 15 sputter nickel metals capable of using, be stained with metallization process such as silver and reach; Again on the one hand, but termination electrode 15 more metal such as plated with nickel/tin to form the weld interface end, in order to made capacitor is welded in the electronic installation.
Therefore, the technology of capable of using batch of change of manufacturing approach proposed by the invention is carried out the production of capacitor, to improve whole prouctiveness.Through after the abovementioned steps; The present invention proposes a kind of solid capacitor, and it comprises insulated substrate 1, take shape in the adhesion layer 11A with solid capacitor metal, solid capacitor plain conductor 11B and conductive layer 11C on this insulated substrate 1, transformed the dielectric structure (scheming not show) that forms, taken shape in the hydrophobic layer 12 on those solid capacitor plain conductors 11B, the conductive unit 13 that is coated on this dielectric structure, encapsulated layer 14 and two end electrodes 15 by the surface of those solid capacitor plain conductor 11B and this conductive layer 11C.Particularly; Adhesion layer 11A with solid capacitor metal can be used for solid capacitor plain conductor 11B and conductive layer 11C are fixed on the insulated substrate 1; And but adhesion layer 11A, solid capacitor plain conductor 11B and conductive layer 11C sinter molding are the anode of capacitor; In other words, adhesion layer 11A and solid capacitor plain conductor 11B can form one can anodised metal sintering layer, and conductive layer 11C can be connected in this can anodised metal sintering layer; Structurally; Adhesion layer 11A with solid capacitor metal is that part is covered on the insulated substrate 1, and solid capacitor plain conductor 11B is located on the adhesion layer 11A and insulated substrate 1 with solid capacitor metal, and conductive layer 11C is covered on adhesion layer 11A with solid capacitor metal and the solid capacitor plain conductor 11B to draw positive electrode; And the surface of solid capacitor plain conductor 11B and conductive layer 11C, can transform and form a dielectric structure (for example a kind of oxide layer) all around; Hydrophobic layer 12 is covered on the solid capacitor plain conductor 11B, with the effect on structure of the liquid in the isolated technology to preceding technology made; 13 of conductive units coat dielectric structure, and conductive unit 13 can have electroconductive polymer layer and negative electrode (for example utilize the electric conducting material of one layer or more to be attached to form on the electroconductive polymer layer and draw negative electrode); Encapsulated layer 14 (a for example insulating material) then coat aforesaid insulated substrate 1 and on anode, negative electrode, dielectric structure etc. to form protective layer; And part exposes anode and negative electrode; As shown in the figure, encapsulated layer 14 coats the central portion of whole solid capacitor and exposes the both ends of solid capacitor; Termination electrode 15 takes shape in 14 exposed regions of encapsulated layer, and so that anode and negative electrode are drawn, in addition, termination electrode 15 more can form weld part.
In addition, the present invention more proposes one second manufacture method, and the difference of itself and preceding method is that second manufacture method uses the adhesion layer with carbon to replace aforesaid adhesion layer 11A with solid capacitor metal.The adhesion layer with carbon of present embodiment can be fixed in solid capacitor plain conductor 11B and conductive layer 11C on the insulated substrate 1 equally; But in sintering step; Adhesion layer with carbon can gasify because of the high temperature of sintering process, so in end article, do not have the structure of adhesion layer.And other process conditions of second manufacture method, step all can not repeat them here with reference to previous embodiment.
In other words; Please refer to Figure 10; The present invention utilizes the made solid capacitor of second manufacture method to have following structure, insulated substrate 1, takes shape in solid capacitor plain conductor 11B and conductive layer 11C on this insulated substrate 1, is transformed the dielectric structure (scheming not show) that forms, taken shape in the hydrophobic layer 12 on those solid capacitor plain conductors 11B, the conductive unit 13 that is coated on this dielectric structure, encapsulated layer 14 and two end electrodes 15A, 15B by the surface of those solid capacitor plain conductor 11B and this conductive layer 11C.Particularly, solid capacitor plain conductor 11B and conductive layer 11C are fixed on the insulated substrate 1, but and solid capacitor plain conductor 11B and conductive layer 11C sinter molding are the anode of capacitor, and in sintering process, adhesion layer 11A gasifies because of high temperature; Therefore, on product structure, solid capacitor plain conductor 11B is located on the insulated substrate 1, and conductive layer 11C is covered on insulated substrate 1 and the solid capacitor plain conductor 11B; And the surface of solid capacitor plain conductor 11B and conductive layer 11C can transform formation one dielectric structure; Hydrophobic layer 12 is covered on the solid capacitor plain conductor 11B, with the effect on structure of the liquid in the isolated technology to preceding technology made; 13 of conductive units coat dielectric structure, and conductive unit 13 can have electroconductive polymer layer and negative electrode; 14 of encapsulated layers coat aforesaid insulated substrates 1 and on anode, negative electrode, dielectric structure etc., and part exposes anode and negative electrode, and is as shown in the figure, encapsulated layer 14 coats the central portion of whole solid capacitor and exposes the both ends of solid capacitor; Termination electrode 15A, 15B take shape in 14 exposed regions of encapsulated layer, and so that anode and negative electrode are drawn, in addition, termination electrode 15A, 15B more can form weld part.
In sum, the present invention has the following advantages at least:
1, the present invention proposes a kind of batch of method of changing the production solid capacitor, and it can reach preferable prouctiveness, and production cost is lower.
2, the electric characteristics of the capacitor of made of the present invention is good; And its controllable thickness is between 0.6 to 0.9mm; At 1.9mm, the present invention can significantly reduce the size of assembly, to be applicable to the electronic product of miniaturization compared to the thickness of conventional solid-state electrolytic capacitor manufactured goods.
The above is merely preferable possible embodiments of the present invention, and is non-so limit to claim of the present invention, so the equivalence techniques that uses specification of the present invention and diagramatic content to do such as changes, all is contained in the scope of the present invention.
Claims (12)
1. the manufacture method of a solid capacitor is characterized in that, may further comprise the steps:
One insulated substrate is provided, has at least two capacitor regions on it;
First forming step is provided, to have the adhesion layer of solid capacitor metal respectively at formation one on this two capacitor regions;
A plurality of solid capacitor plain conductors are placed this adhesion layer on this two capacitor regions;
Second forming step is provided, and to have the conductive layer of solid capacitor metal respectively at formation one on this two capacitor regions, wherein this conductive layer is covered in this adhesion layer and those solid capacitor plain conductors;
Provide an additional conductive unit to change into step to carry out one; Wherein this additional conductive unit is electrically connected at those solid capacitor plain conductors, transforms into a dielectric structure with the surface with those solid capacitor plain conductors on this two capacitor regions and this conductive layer;
Moulding one hydrophobic layer is on those solid capacitor plain conductors, and moulding one conductive unit is to be coated on this dielectric structure;
Carry out a cutting step, to distinguish this two capacitor regions;
Carry out an encapsulation step; And
Carry out a termination electrode making step.
2. the manufacture method of solid capacitor as claimed in claim 1 is characterized in that, this solid capacitor metal is tantalum, niobium or both combinations.
3. the manufacture method of solid capacitor as claimed in claim 1; It is characterized in that; In the step that an additional conductive unit is provided; Utilize sputtering way to form an additional conductive metal level, perhaps utilize a Conductive gauge to be electrically connected at those solid capacitor plain conductors to be electrically connected at those solid capacitor plain conductors.
4. the manufacture method of solid capacitor as claimed in claim 1; It is characterized in that this changes into step and utilizes electrochemical method that the solid capacitor metal on the surface of those solid capacitor plain conductors and this conductive layer is transformed into oxide to form described dielectric structure.
5. the manufacture method of solid capacitor as claimed in claim 1 is characterized in that, after second forming step, includes a sintering step.
6. a solid capacitor is characterized in that, this solid capacitor comprises:
One insulated substrate;
Be formed in the adhesion layer on this insulated substrate with solid capacitor metal; Have a plurality of solid capacitor plain conductors and a conductive layer on it; The surface of those solid capacitor plain conductors and this conductive layer transforms and forms a dielectric structure; This adhesion layer with solid capacitor metal partly is covered on this insulated substrate; Those solid capacitor plain conductors are located on this adhesion layer with solid capacitor metal and this insulated substrate, and this conductive layer is covered on this adhesion layer with solid capacitor metal and those solid capacitor plain conductors;
One is coated on the conductive unit of this dielectric structure;
Be formed in the hydrophobic layer on those solid capacitor plain conductors;
One encapsulated layer, it coats the central portion of this solid capacitor and exposes the both ends of this solid capacitor; And
Two end electrodes is located at the both ends of this solid capacitor respectively.
7. the manufacture method of a solid capacitor is characterized in that, this manufacture method may further comprise the steps:
One insulated substrate is provided, has at least two capacitor regions on it;
First forming step is provided, to have the adhesion layer of carbon respectively at formation one on this two capacitor regions;
A plurality of solid capacitor plain conductors are placed this adhesion layer on this two capacitor regions;
Second forming step is provided, and to have the conductive layer of solid capacitor metal respectively at formation one on this two capacitor regions, wherein this conductive layer is covered in this adhesion layer and those solid capacitor plain conductors;
Provide an additional conductive unit to change into step to carry out one; Wherein this additional conductive unit is electrically connected at those solid capacitor plain conductors, transforms into a dielectric structure with the surface with those solid capacitor plain conductors on this two capacitor regions and this conductive layer;
Moulding one hydrophobic layer is on those solid capacitor plain conductors, and moulding one conductive unit is to be coated on this dielectric structure;
Carry out a cutting step, to distinguish this two capacitor regions;
Carry out an encapsulation step; And
Carry out a termination electrode making step.
8. the manufacture method of solid capacitor as claimed in claim 7 is characterized in that, this solid capacitor metal is tantalum, niobium or both combinations.
9. the manufacture method of solid capacitor as claimed in claim 7; It is characterized in that; In the step that an additional conductive unit is provided; Utilize sputtering way to form an additional conductive metal level, perhaps utilize a Conductive gauge to be electrically connected at those solid capacitor plain conductors to be electrically connected at those solid capacitor plain conductors.
10. the manufacture method of solid capacitor as claimed in claim 7; It is characterized in that this changes into step and utilizes electrochemical method that the solid capacitor metal on the surface of those solid capacitor plain conductors and this conductive layer is transformed into oxide to form described dielectric structure.
11. the manufacture method of solid capacitor as claimed in claim 7 is characterized in that, after second forming step, include a sintering step, and this adhesion layer with carbon produces gasification in this sintering step.
12. a solid capacitor is characterized in that, this solid capacitor comprises:
One insulated substrate;
Be formed in a plurality of solid capacitor plain conductors and a conductive layer on this insulated substrate; The surface of those solid capacitor plain conductors and this conductive layer transforms and forms a dielectric structure; Those solid capacitor plain conductors are located on this insulated substrate, and this conductive layer is covered on this insulated substrate and those solid capacitor plain conductors;
One is coated on the conductive unit of this dielectric structure;
Be formed in the hydrophobic layer on those solid capacitor plain conductors;
One encapsulated layer, it coats the central portion of this solid capacitor and exposes the both ends of this solid capacitor; And
Two end electrodes is located at the both ends of this solid capacitor respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101200092A CN102768907A (en) | 2011-05-04 | 2011-05-04 | Solid state capacitor and manufacturing device thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101200092A CN102768907A (en) | 2011-05-04 | 2011-05-04 | Solid state capacitor and manufacturing device thereof |
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| CN102768907A true CN102768907A (en) | 2012-11-07 |
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| US3787961A (en) * | 1972-06-19 | 1974-01-29 | Matsuo Electric Co | Chip-shaped, non-polarized solid state electrolytic capacitor and method of making same |
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| CN1929718A (en) * | 2005-06-20 | 2007-03-14 | E.I.内穆尔杜邦公司 | Improved electrodes, inner layers, capacitors, electronic devices and methods of making thereof |
| CN101627449A (en) * | 2007-03-07 | 2010-01-13 | 凯米特电子公司 | Can be embedded into the thin solid electrolytic capacitor in the substrate |
| CN201788828U (en) * | 2010-05-27 | 2011-04-06 | 佳帮科技股份有限公司 | Solid-state tantalum capacitor |
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2011
- 2011-05-04 CN CN2011101200092A patent/CN102768907A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3787961A (en) * | 1972-06-19 | 1974-01-29 | Matsuo Electric Co | Chip-shaped, non-polarized solid state electrolytic capacitor and method of making same |
| US6813140B1 (en) * | 1999-11-15 | 2004-11-02 | Avx Limited | Solid state capacitors and methods of manufacturing them |
| CN1929718A (en) * | 2005-06-20 | 2007-03-14 | E.I.内穆尔杜邦公司 | Improved electrodes, inner layers, capacitors, electronic devices and methods of making thereof |
| CN1909127A (en) * | 2005-08-04 | 2007-02-07 | Nec东金株式会社 | Solid electrolytic capacitor, distributed constant type noise filter, and method of producing the same |
| CN101627449A (en) * | 2007-03-07 | 2010-01-13 | 凯米特电子公司 | Can be embedded into the thin solid electrolytic capacitor in the substrate |
| CN201788828U (en) * | 2010-05-27 | 2011-04-06 | 佳帮科技股份有限公司 | Solid-state tantalum capacitor |
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Application publication date: 20121107 |