CN102763041B - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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Publication number
CN102763041B
CN102763041B CN201180010292.1A CN201180010292A CN102763041B CN 102763041 B CN102763041 B CN 102763041B CN 201180010292 A CN201180010292 A CN 201180010292A CN 102763041 B CN102763041 B CN 102763041B
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China
Prior art keywords
substrate
lithographic equipment
lens
independent
radiation
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CN201180010292.1A
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Chinese (zh)
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CN102763041A (en
Inventor
约翰内斯·昂伍李
彼得·德亚格尔
埃尔温·范茨韦特
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A lithographic apparatus including an optical column configured to project a beam on a target portion of a substrate is disclosed. A focus controller is provided to control the focus position (906, 920, 924, 930) of the optical column with respect to a reference object, wherein the focus controller comprises a focus measurement device (942) configured to determine a focus quality on the reference object (938), and a focus actuator configured to adjust the focus position of the optical column on the basis of the determined focus quality.

Description

Lithographic equipment and device making method
Technical field
The present invention relates to lithographic equipment, programmable patterning device, device making method and for produce the method for picture plane of fine definition at lithographic equipment.
Background technology
Lithographic equipment is the pattern that applies expectation to the machine on substrate or a part of substrate.Lithographic equipment can for for example integrated circuit (IC), flat-panel monitor and there is other device of fine-feature or the manufacture of structure in.In traditional lithographic equipment, can will be called the patterning device of mask or mask for generation of the circuit pattern of the individual layer corresponding to IC, flat-panel monitor or other device.Can this design transfer is for example, to substrate (silicon wafer or glass plate) (part) upper, for example via imaging by described design transfer to the radiation-sensitive materials arranging on described substrate (resist) layer.
Except circuit pattern, patterning device can also be for generation of other pattern, the matrix of for example color filter patterns or point.Substitute traditional mask, patterning device can comprise that pattern forms array, and this pattern forms array and comprises the array that produces circuit or other and can apply the independent controlled member of pattern.Compared with the traditional system based on mask, the advantage of such " maskless " system is can arrange more rapidly and/or change pattern, and cost to be less.
Therefore, maskless system comprises programmable patterning device (such as spatial light modulator, contrast device etc.).The array that uses independent controlled member carries out (for example electronics or optically) programming to programmable patterning device, is used to form the bundle of the patterning of expectation.The type of programmable patterning device comprises micro reflector array, liquid crystal display (LCD) array, grating light valve array etc.
Summary of the invention
For example expect to provide one flexibly, lithographic equipment cheaply, this lithographic equipment comprises programmable patterning device.
In an embodiment, a kind of lithographic equipment is disclosed, described lithographic equipment comprises modulator and optical projection system, and described modulator is configured to the exposure area of substrate to be exposed to according to multiple bundles of the pattern modulation of expecting, described optical projection system is configured to the bundle of modulation to project on substrate.Modulator can move with respect to exposure area, and/or optical projection system can have the lens arra for receiving multiple bundles, and described lens arra can move with respect to exposure area.
In an embodiment, lithographic equipment can for example be provided with optical devices row (or being called optical system) (optical column), and described optical devices row are configured to pattern generation in the target part of substrate.Optical devices row can be provided with: self-emission formula contrast device, is configured to transmitted beam; And optical projection system, be configured at least a portion of described bundle to project in target part.Described equipment can be provided with actuator, and described actuator is configured to the part with respect to substrate mobile optical device row or optical devices row.
In the maskless lithography equipment of the above-mentioned type, in one embodiment, multiple optical devices row are provided, substantially projected bundle is projected in the different target part of substrate simultaneously.In practice, substrate surface can be divided into band along the direction perpendicular to direction of scanning, and each band is associated with optical devices row.Each band is further divided into multiple target parts along the direction that is parallel to direction of scanning, afterwards when along optical devices row moving substrate, by target part described in pattern projection.
In the time that pattern is projected on substrate, the bundle of expecting to project to the patterning on substrate by with the surface of the substrate that produces pattern thereon is correctly aimed at and is focused.Lithographic equipment has specific focusing range.Expect substrate orientation in this focusing range, for correctly imaging.
In the lithographic equipment of the above-mentioned type, pattern can or roughly project on the whole width of substrate by the while simultaneously.Therefore, the whole width of expecting to be directed to substrate by substrate arrangement in focusing range, thereby cause utilizing the parameter of limited quantity to carry out the leveling of substrate.
Expecting provides a kind of lithographic equipment, this lithographic equipment to be configured to substrate to be held in the optical devices of lithographic equipment and to be listed as into positive burnt position.
According to embodiments of the invention, a kind of lithographic equipment is provided, comprise: optical devices row, be configured to bundle to project in the target part of substrate, described optical devices row comprise the radiation source and the optical projection system that are configured to provide bundle, described optical projection system is configured to described bundle to project in described target part, wherein said optical devices are listed as on the fixed part that is partly arranged on lithographic equipment, and be partly arranged in the part that can rotate of described lithographic equipment, wherein said optical devices row have focal position; Scanning movement actuator, is configured to be listed as with sweep velocity moving substrate with respect to optical devices along direction of scanning; And focus controller, be configured to control optical devices and be listed as the focal position with respect to Reference, wherein, focus controller comprises focusing measurement mechanism and focus actuator, described focusing measurement mechanism is configured to determine the focusing quality on Reference, and described focus actuator is configured to adjust based on fixed focusing quality the focal position of optical devices row.
According to embodiments of the invention, provide a kind of for the method at lithographic equipment raw imaging plane on positive burnt position, described method comprises step: measure optical devices and be listed in the focusing quality on Reference, based on the measurement of optical devices row is adjusted to focal position, and be directed to the multiple described measurement of one or more other optical devices column weight and set-up procedure.
According to one embodiment of present invention, provide a kind of for the method at lithographic equipment pattern generation on substrate, described method comprises step: before multiple bundles being projected in multiple target parts, be directed to each optical devices and be listed as with respect to Reference and form public picture plane in positive burnt position; Be adjusted to public picture plane with the position that the surface of substrate is formed to multiple target parts at place at pattern.
Brief description of the drawings
The accompanying drawing that is incorporated herein and forms a part for instructions has shown embodiments of the invention, and is in addition used from and principle of the present invention is described and makes those skilled in the relevant art can carry out and use the present invention with described description one.In the accompanying drawings, identical reference marker can represent identical or functionally similar element.
Fig. 1 shows the diagrammatic side view of lithographic equipment according to an embodiment of the invention.
Fig. 2 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Fig. 3 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Fig. 4 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Fig. 5 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Fig. 6 (A)-(D) shows diagrammatic top view and the side view of a part for lithographic equipment according to an embodiment of the invention.
Fig. 7 (A)-(O) shows diagrammatic top view and the side view of a part for lithographic equipment according to an embodiment of the invention.
Fig. 7 (P) shows the power/forward current figure of independent addressable element according to an embodiment of the invention.
Fig. 8 shows the diagrammatic side view of lithographic equipment according to an embodiment of the invention.
Fig. 9 shows the diagrammatic side view of lithographic equipment according to an embodiment of the invention.
Figure 10 shows the diagrammatic side view of lithographic equipment according to an embodiment of the invention.
Figure 11 shows according to an embodiment of the invention the diagrammatic top view for the array of the independent controlled member of lithographic equipment.
Figure 12 shows the pattern that uses embodiments of the invention design transfer to be arrived to substrate.
The illustrative arrangement of Figure 13 display optical engine.
Figure 14 (A) and (B) show the diagrammatic side view of a part for lithographic equipment according to an embodiment of the invention.
Figure 15 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Figure 16 (A) shows the diagrammatic side view of a part for lithographic equipment according to an embodiment of the invention.
Figure 16 (B) shows the illustrated position with respect to the surveyed area of the sensor of substrate.
Figure 17 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention.
Figure 18 shows the schematic, cross-sectional side view of lithographic equipment according to an embodiment of the invention.
Figure 19 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic top view of a part for the lithographic equipment of optical element movably.
Figure 20 shows the schematic three dimensional view of a part for the lithographic equipment in Figure 19.
Figure 21 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably, and demonstrates three different position of rotation of the optical element 242 of setting with respect to independent controlled member.
Figure 22 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably, and demonstrates three different position of rotation of the optical element 242 of setting with respect to independent controlled member.
Figure 23 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably, and demonstrates five different position of rotation of the optical element 242 of setting with respect to independent controlled member.
Figure 24 is presented at and the uses diameter standard laser diode that is 5.6mm is for obtaining the schematic layout of a part of the independent controlled member 102 under whole coverage conditions of the width that crosses substrate.
Figure 25 shows the diagrammatic layout of the details of Figure 24.
Figure 26 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably.
Figure 27 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably.
Figure 28 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its layout of the diagrammatic side view of a part for the lithographic equipment of optical element movably, and demonstrates five different position of rotation of the optical element 242 of setting with respect to independent controlled member.
Figure 29 shows the schematic three dimensional view of a part for the lithographic equipment of Figure 28.
Figure 30 schematically shows the layout of 8 lines that simultaneously write out by the single removable optical element 242 of setting in Figure 28 and 29.
Figure 31 shows for controlling the illustrative arrangement of focusing, wherein has the mobile roof shape parts (rooftop) in the layout of Figure 28 and 29.
Figure 32 show have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its movably optical element, the schematic, cross-sectional side view of lithographic equipment according to an embodiment of the invention.
Figure 33 illustrates a part for lithographic equipment according to an embodiment of the invention.
Figure 34 illustrates the vertical view of the lithographic equipment of Figure 33 according to an embodiment of the invention.
The side view of Figure 35 and 36 schematically illustrated focus control systems according to an embodiment of the invention.
Embodiment
Maskless lithography equipment, maskless lithography method, programmable patterning device and miscellaneous equipment, the object of manufacture and the one or more embodiment of method have been described herein.In one embodiment, low cost and/or maskless lithography equipment are flexibly provided.Because it is maskless, therefore do not need traditional mask for for example IC or the flat-panel monitor of exposing.Similarly, do not need one or more ring for package application; Programmable patterning device can provide digital edge treated " ring " for package application, for avoiding edge projection.Maskless (digital pattern) can use flexible substrate.
In one embodiment, lithographic equipment can be used in the application of super non-critical (super-non-critical).In one embodiment, the resolution of can have >=0.1 μ m of lithographic equipment, the resolution of for example >=0.5 μ m or >=resolution of 1 μ m.In one embodiment, the resolution of the resolution of can have≤20 μ m of lithographic equipment, for example≤10 μ m or≤resolution of 5 μ m.In one embodiment, the resolution of can have～0.1-10 of lithographic equipment μ m.In one embodiment, can have >=50nm's of lithographic equipment is overlapping, the overlapping, >=200nm of for example >=100nm overlapping or >=300nm overlapping.In one embodiment, can have≤500nm's of lithographic equipment is overlapping, the overlapping ,≤300nm of for example≤400nm overlapping or≤200nm overlapping.These overlapping and resolution values can be irrelevant with substrate dimension and material.
In one embodiment, lithographic equipment has very high dirigibility.In one embodiment, lithographic equipment can extend to the substrate of different size, type and characteristic.In one embodiment, lithographic equipment has in fact unlimited field size.Therefore, lithographic equipment can carry out multiple application (for example, IC, flat-panel monitor, encapsulation etc.) with single lithographic equipment or with the multiple lithographic equipments that use large public lithographic equipment platform.In one embodiment, lithographic equipment allows to produce automated job, for flexible manufacture is provided.In one embodiment, lithographic equipment provides 3D integrated.
In one embodiment, lithographic equipment is cheaply.In one embodiment, only use the parts (for example, emitted radiation diode, simply movably substrate holder and lens arra) of public existing (off-the-shelf).In one embodiment, the imaging of pixel-grid is used for making simple projecting optical device to operate.In one embodiment, reduce costs with the substrate holder with single direction of scanning and/or reduce complicacy.
Fig. 1 schematically shows lithographic projection apparatus 100 according to an embodiment of the invention.Equipment 100 comprises patterning device 104, object retainer 106 (for example object table, for example substrate table) and optical projection system 108.
In one embodiment, patterning device 104 comprises the multiple independent controlled member 102 for chopped radiation, for applying pattern to restrainting 110.In one embodiment, can be with respect to the position of optical projection system 108 fixing multiple independent controlled members 102.But in alternative layout, multiple independent controlled members 102 can be connected to locating device (not shown), for accurately locate they one or more according to specific parameter (for example, with respect to optical projection system 108).
In one embodiment, patterning device 104 is self-emission formula contrast devices.Such patterning device 104 has been eliminated the requirement to radiating system, and it can for example reduce cost and the size of lithographic equipment.For example, each independent controlled member 102 is emitted radiation diodes, for example light emitting diode (LED), organic LED (OLED), polymer LED (PLED) or laser diode (for example solid-state laser diode).In one embodiment, each independent controlled member 102 is laser diodes.In one embodiment, each independent controlled member 102 is bluish-violet laser diode (for example Sanyo model no.DL-3146-151).Such diode is by such as Sanyo, Nichia, company's supplies such as Osram and Nitride.In one embodiment, diode transmitting has the radiation of the wavelength of about 365nm or about 405nm.In one embodiment, diode can provide the output power of selecting from the scope of 0.5-100mW.In one embodiment, the size of laser diode (naked pipe core) is to select from the scope of 250-600 micron.In one embodiment, laser diode has the emitting area of selecting from the scope of 1-5 micron.In one embodiment, laser diode has the angle of divergence of selecting from the scope of 7-44 degree.In one embodiment, patterning device 104 has approximately 1 × 10 5individual diode, has for providing more than or equaling approximately 6.4 × 10 8w/ (m 2the configuration (such as emitting area, the angle of divergence, output power etc.) of total brightness .sr).
In one embodiment, self-emission formula contrast device comprises than the more independent addressable element 102 of the needed independent addressable element of independent controlled member 102 that can not operate or allow can not proper handling in the situation that " redundancy " that use at another independent controlled member 102.In one embodiment, the independent controlled member of redundancy may be advantageously utilised in use for example in the embodiment of the movably independent controlled member 102 of below discussing about Fig. 5.
In one embodiment, the independent controlled member 102 in self-emission formula contrast device for example, is operated in the steeply inclined part of power/forward current curve of independent controlled member 102 (laser diode).This may be more efficient and cause less power attenuation/heat.In one embodiment, in use, the output of the light of each independent controlled member is 1mW at least, for example at least 10mW, at least 25mW, at least 50mW, at least 100mW or 200mW at least.In one embodiment, in use, the light output of each independent controlled member is to be less than 300mW, is less than 250mW, is less than 200mW, is less than 150mW, is less than 100mW, is less than 50mW, is less than 25mW, or is less than 10mW.In one embodiment, the power attenuation for operating independent controlled member of each programmable patterning device is less than 10kW in use, for example, be less than 5kW, is less than 1kW, or is less than 0.5kW.In one embodiment, be 100W at least for operating the power attenuation of each programmable patterning device of independent controlled member in use, for example 300W at least, at least 500W, or 1kW at least.
Lithographic equipment 100 comprises object retainer 106.In the present embodiment, object retainer comprises for example, object table 106 for keeping substrate 114 (being coated with silicon wafer or the glass substrate of resist).Object table 106 can be movably and be connected to locating device 116, for the specific accurately position substrate 114 of parameter of basis.For example locating device 116 can be with respect to optical projection system 108 and/or accurately position substrate 114 of patterning device 104.In one embodiment, can realize with locating device 116 movement of object table 106, this locating device 116 comprises the long stroke module (coarse positioning) and the optional short stroke module (fine positioning) that in Fig. 1, do not specifically illustrate.In one embodiment, described equipment is not at least for the short stroke module of mobile object platform 106.Can use similar system to locate independent controlled member 102.Should be appreciated that bundle 110 can be alternatively/be additionally movably, and object table 106 and/or independent controlled member 102 can have fixing position, relatively move for providing needed.Such layout can help the size of limiting device.In embodiment in the manufacture that can for example be used in flat-panel monitor, object table 106 can be static, and locating device 116 is for example configured to, with respect to object table 106 (thereon) moving substrate 114.For example, object table 106 can be provided with the system across the substrate 114 through object table 106 for the velocity sweeping with substantial constant.In the situation that this is done, object table 106 can be provided with a large amount of openings on smooth uppermost surface, gas be supplied to by described opening, for provide can support substrates 114 air cushion (gas cushion).This is commonly referred to gas bearing and arranges.Use one or more actuator (not shown)s moving substrate 114 in object table 106, described actuator can be with respect to the accurately position substrate 114 of path of bundle 110.Alternately, can be by optionally opening and ending the path of gas through opening, with respect to object table 106 moving substrates 114.In one embodiment, object retainer 106 can be rolling system, and substrate rolls in described rolling system, and locating device 116 can be motor, for rotating rolling system to provide substrate to object table 106.
Optical projection system 108 (for example quartz and/or CaF 2lens combination or comprise refraction-reflection system or the mirror system of the lens element of being made by such material) can for example, for the bundle of the patterning of being modulated by independent controlled member 102 being projected in the target part 120 (one or more tube core) of substrate 114.Optical projection system 108 can, by the pattern projection imaging being provided by multiple independent controlled members 102, as one man be formed on substrate 114 pattern.Alternately, the image that optical projection system 108 can projection secondary source, the element in multiple independent controlled members 102 is as the shading piece of secondary source.
In this respect, optical projection system can comprise a concentrating element or multiple concentrating element (being below referred to as lens arra), for example microlens array (being known as MLA) or array of fresnel lenses, for example, be used to form secondary source and hot spot be imaged onto on substrate 114.In one embodiment, lens arra (for example MLA) comprises at least 10 concentrating elements, for example at least 100 concentrating elements, at least 1000 concentrating elements, at least 10000 concentrating elements, at least 100000 concentrating elements or at least 1000000 concentrating elements.In one embodiment, the quantity of the independent controlled member in patterning device is equal to or greater than the quantity of the concentrating element in lens arra.In one embodiment, lens arra comprises concentrating element, one or more independent controlled member optical correlation in this concentrating element and independent controlled member array, for example only with independent controlled member array in an independent controlled member optical correlation, or with independent controlled member array in two or more independent controlled member optical correlation, for example 3 or more, 5 or more, 10 or more, 20 or more, 25 or more, 35 or more or 50 or more independent controlled member optical correlation; In one embodiment, concentrating element be less than 5000 independent controlled member optical correlations, for example be less than 2500, be less than 1000, be less than 500, or be less than the independent controlled member optical correlation of 100.In one embodiment, lens arra comprises more than one concentrating element (for example more than 1000, great majority or approximately whole), the one or more independent controlled member optical correlation in itself and independent controlled member array.
In one embodiment, for example, by using one or more actuators, lens arra is at least movably arriving in substrate and the direction away from substrate.Can mobile lens array for example make to allow to focus on needn't moving substrate in the situation that adjustment to substrate with away from substrate.In one embodiment, the separate lenses element in lens arra (for example each separate lenses element in lens arra) is at least along for example, to substrate be movably (carrying out local focusing on the substrate of non-flat forms adjusts or make each optical devices row reach identical focal length) away from the direction of substrate.
In one embodiment, for example, in the time that the wavelength of for example radiation is more than or equal to about 400nm (405nm), lens arra comprises plastics concentrating element (it can be easy to manufacture (for example, by injection-molded) and/or be that cost is low).In one embodiment, the wavelength of radiation is selected from the scope of about 400nm-500nm.In one embodiment, lens arra comprises quartzy concentrating element.In one embodiment, each concentrating element or multiple concentrating element can be asymmetric lens.Asymmetry can be identical or asymmetry can be to be different from one or more different concentrating element in multiple concentrating elements for the one or more concentrating element in multiple concentrating elements for each in multiple concentrating elements.Asymmetric lens may be convenient to convert oval radiant output to circular projection spot, and vice versa.
In one embodiment, concentrating element has high-NA (NA), its be arranged to by radiation in focal position outer projection to substrate, to obtain the low NA for described system.The lens that NA is higher can be more cost effective, popular and/or have than the better quality of available low NA lens.In one embodiment, low NA is less than or equal to 0.3, and in one embodiment, low NA is 0.18,0.15 or less.Correspondingly, the lens that NA is higher have the NA larger than the design NA of described system, for example, be greater than 0.3, be greater than 0.18 or be greater than 0.15.
Although optical projection system 108 separates with patterning device 104 in one embodiment, this not necessarily.Optical projection system 108 can be one with patterning device 108.For example, lens arra piece or plate can connect (one connection) to patterning device 104.In one embodiment, the form of lenslet that lens arra can become separate space to separate, each lenslet connects (one connections) to the independent addressable element in patterning device 104, as detailed description more below.
Alternatively, lithographic equipment can comprise the radiating system that radiation (for example ultraviolet (UV) radiation) is supplied to multiple independent controlled members 102.For example, if patterning device self is radiation source (diode laser matrix or LED array), can design lithographic equipment so and there is no radiating system, there is no the radiation source except patterning device self, or be at least the radiating system of simplifying.
Radiating system comprises irradiation system (irradiator), and described irradiation system is configured for the radiation receiving from radiation source.Irradiation system comprises one or more element in following element: radiation delivery system (for example applicable directional mirror), radiation regulating device (for example beam expander), for setting adjusting gear, integrator and/or the condenser of angle intensity distributions (conventionally, can adjust at least described outside and/or the inner radial scope (being generally called σ-outside and σ-inside) of the intensity distributions in the pupil plane of irradiator) of described radiation.Irradiation system can be for adjusting radiation, and this radiation can provide to independent controlled member 102, for have homogeneity and the intensity distributions of expectation at its xsect.Irradiation system can be arranged to radiation to be divided into multiple son bundles, and for example one or more in each and multiple independent controlled member of described sub-bundle is relevant.Two-dimensional diffraction gratings can be for example for being divided into radiation son bundle.In described description, term " bundle of radiation " and " radiation beam " include but not limited to the situation that bundle is made up of multiple such radiator bundles.
Radiating system can also comprise radiation source (for example excimer laser), for generation of being supplied to multiple independent controlled members 102 or the radiation by multiple independent controlled members 102.Radiation source and lithographic equipment 100 can be discrete entities, for example, in the time that radiation source is excimer laser.Under such situation, radiation source can be considered to a part that forms lithographic equipment 100, and radiation is passed to irradiator from source.Under other situation, radiation source can be the ingredient of lithographic equipment 100, for example, while being mercury lamp in source.Should be appreciated that these two kinds of situations are all designed within the scope of the invention.
In one embodiment, radiation source can be multiple independent controlled members 102, and radiation source can provide wavelength for 5nm at least in one embodiment, for example 10nm at least, at least 50nm, at least 100nm, at least 150nm, at least 175nm, at least 200nm, at least 250nm, at least 275nm, at least 300nm, at least 325nm, at least 350nm or at least radiation of 360nm.In one embodiment, the wavelength of radiation is 450nm at the most, for example 425nm at the most, 375nm at the most, 360nm at the most, 325nm at the most, 275nm at the most, 250nm at the most, 225nm at the most, 200nm at the most, or 175nm at the most.In one embodiment, the wavelength of radiation comprises 436nm, 405nm, 365nm, 355nm, 248nm, 193nm, 157nm, 126nm, and/or 13.5nm.In one embodiment, radiation comprises the wavelength of about 365nm or about 355nm.In one embodiment, radiation comprises broad band wavelength, for example, comprise 365nm, 405nm and 436nm.Can use 355nm lasing light emitter.In one embodiment, the wavelength that radiation has is about 405nm.
In one embodiment, the angle with the angle between 0 and 90 °, for example, between 5 and 85 °, between 15 and 75 °, between 25 and 65 ° or between 35 and 55 ° is directed to patterning device 104 from irradiation system by radiation.Radiation from irradiation system can directly be provided to patterning device 104.In alternative embodiment, can radiation be guided to patterning device 104 from irradiation system by beam splitter (not shown), this beam splitter is arranged so that radiation is at first by beam splitter reflection and be directed to patterning device 104.Patterning device 104 is modulated described bundle and its reflection is back to beam splitter, and this beam splitter transmits modulated bundle towards substrate 114.But, should be appreciated that alternative layout can be for guiding to radiation patterning device 104 and guiding to afterwards substrate 114.Especially, for example, are self-emission formula (for example multiple diodes) if use transmission-type patterning device 104 (LCD arrays) or patterning device 104, may not need so irradiation system to arrange.
In the operation of lithographic equipment 100, for example, in the time that patterning device 104 is not (the comprising LED) of emitted radiation type, radiation is for example incided, patterning device 104 (multiple independent controlled members) from radiating system (irradiation system and/or radiation source), and modulates by patterning device 104.After producing by multiple independent controlled members 102, the bundle 110 of patterning is through optical projection system 108, and this optical projection system 108 focuses on bundle 110 in the target part 120 of substrate 114.
Under locating device 116 help of (for example, with the position transducer 134 on pedestal 136 (receiving interferometric measuring means, linear encoder or the capacitive transducer of interfering beams 138) alternatively), accurately moving substrate 114, for example, to locate different target parts 120 in the path of bundle 110.In use, can be for the position of accurately proofreading and correct multiple independent controlled members 102 with respect to the path of bundle 110, for example, in scan period for the locating device of multiple independent controlled members 102.
Although lithographic equipment 100 is described as the resist for exposing on substrate herein according to an embodiment of the invention, should be appreciated that equipment 100 can be for the bundle of projection pattern 110, for being used in the photolithography without resist.
As shown here, lithographic equipment 100 is reflection type (for example adopting reflective independent controlled member).Alternately, equipment can be transmission-type (for example adopting transmission-type independence controlled member).
Can be by described specialized equipment 100 for example, for following one or more of patterns:
1. in step mode, independent controlled member 102 and substrate 114 are remained substantially static in, the radiation beam of whole patterning 110 is once projected to (, single static exposure) in target part 120.Then substrate 114 is moved along X and/or Y-direction, make to make the radiation beam 110 that different target part 120 is patterned to expose.In step mode, the full-size of exposure field has limited the size of the described target part 120 of imaging in single static exposure.
2. in scan pattern, when independent controlled member 102 and substrate 114 are synchronously scanned, the radiation beam of patterning 110 is projected to (, single dynamic exposure) in target part 120.Substrate can be determined by (dwindling) magnification of described optical projection system PS and image inversion feature with respect to speed and the direction of independent controlled member.In scan pattern, the full-size of exposure field has limited the width (along non-direction of scanning) of target part described in single dynamic exposure, and the length of described scanning motion has been determined the height (along described direction of scanning) of described target part.
3. in pulse mode, independent controlled member 102 remains substantially static, and uses (for example providing by impulse radiation source or by pulsed modulation independence controlled member) pulse that whole pattern is projected in the target part 120 of substrate 114.With the speed moving substrate 114 of substantial constant, the line sweep that the bundle 110 of patterning is carried out through substrate 114.The pattern being provided by independent controlled member upgrades as required between pulse, and pulse is controlled to the target part 120 that makes the place of the desired location on substrate 114 expose continuous by the time.Therefore, the bundle 110 of patterning can cross substrate 114 and scan, the band of the thinking substrate 114 complete pattern that exposes.Repeat described process, until whole substrate 114 is exposed line by line.
4. in continuous sweep pattern, except substrate 114 scanned with the speed of substantial constant with respect to the radiation beam B of modulation and independent controlled member array on pattern cross substrate 114 at the bundle 110 of patterning and scan and make its when exposure upgrades, identical with pulse mode in fact.Can use radiation source or the impulse radiation source of substantial constant, it is caught to synchronize with the renewal of the pattern on independent controlled member array.
Also can adopt combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
Fig. 2 shows the diagrammatic top view of for example, lithographic equipment according to an embodiment of the invention for using together with wafer (wafer of 300mm).As shown in Figure 2, lithographic equipment 100 comprises the substrate table 106 for keeping wafer 114.Locating device 116 is associated with substrate table 106, for moving substrate platform 106 on directions X at least.Alternatively, locating device 116 can be in Y-direction and/or Z direction moving substrate platform 106.Locating device 116 can also be around X, Y and/or Z direction rotation substrate table 106.Therefore, locating device 116 can provide up to the motion to 6 degree of freedom.In one embodiment, substrate table 106 provides the only motion on directions X, and its advantage is that cost is lower and complicacy is lower.In one embodiment, substrate table 106 comprises relay optics.
Lithographic equipment 100 also comprises the multiple independent addressable element 102 being arranged on framework 160.Framework 160 can with substrate table 106 and its locating device 116 mechanical isolation.Can be for example by framework 160 is connected to ground or with the discrete firmly pedestal of framework for substrate table 106 and/or its locating device 116, mechanical isolation is provided.Additionally or alternatively, damper can be arranged on framework 160 and and the described structure that is connected of this framework between, no matter and whether described structure is ground, firmly pedestal or the framework for support substrates platform 106 and/or its locating device 116.
In the present embodiment, each independent addressable element 102 is emitted radiation diode, for example bluish-violet laser diode.As shown in Figure 2, independent addressable element 102 can be arranged to at least 3 discrete arrays of the independent addressable element 102 of extending along Y-direction.In one embodiment, the array of the array of independent addressable element 102 and adjacent independent addressable element 102 is staggered on directions X.Lithographic equipment 100, especially independent addressable element 102 can be arranged to provide pixel-grid imaging of more describing in detail as herein.
Each in the array of independent addressable element 102 can be a part for independent optics engine components, and for the ease of copying, it can be manufactured into a unit.In addition, framework 160 can be configured to be expandable and can be configured to be easy to adopt such light engine parts of any amount.Light engine parts can comprise the combination of array and the lens arra 170 (referring to for example Fig. 8) of independent addressable element 102.For example, in Fig. 2, demonstrate 3 light engine parts (thering is relevant lens arra 170 below each array separately of independent addressable element 102).Therefore, in one embodiment, can provide multicolumn optical arrangement, and each light engine forms a post.
In addition, lithographic equipment 100 comprises alignment sensor 150.Alignment sensor for before the exposure of substrate 114 and/or during determine the aligning between independent addressable element 102 and substrate 114.The result of alignment sensor 150 can be used by the controller in lithographic equipment 100, carrys out position substrate platform 106 for for example controlling locating device 116, improves aligning.In addition or alternately, controller can for example be controlled relevant to independent addressable element 102 for locating the locating device of one or more independent addressable element 102, improves aligning.In one embodiment, alignment sensor 150 can comprise the pattern recognition functions/software for carrying out aligning.
In addition or alternately, lithographic equipment 100 comprises horizon sensor 150.Horizon sensor 150 is for determining whether substrate 106 is level with respect to the projection of the pattern from independent addressable element 102.Horizon sensor 150 can exposure substrate 114 before and/or during determine horizontality.The result of horizon sensor 150 can be used by the controller in lithographic equipment 100, for example, control locating device 116 and carry out position substrate platform 106, to improve leveling.In addition or alternately, controller can control example as for example, element for positioning projection's system 108 (lens arra), with the locating device that optical projection system 108 (for example lens arra) is associated, improve leveling.In one embodiment, can on substrate 106, operate horizon sensor and/or by electromagnetic radiation beam is projected on substrate 106 and operated on it by supersonic beam is projected.
In one embodiment, can be for the pattern being provided by independent addressable element 102 be provided from the result of alignment sensor and/or horizon sensor.Pattern can be changed for proofreading and correct for example distortion, and this distortion may be caused by the irregularity degree of the such as optical devices (if any) between independent addressable element 102 and substrate 114, the scrambling in the location of substrate 114, substrate 114 etc.Therefore, can, for changing the pattern of institute's projection, realize nonlinear deformation and proofread and correct from the result of alignment sensor and/or horizon sensor.It may be favourable for for example flexible display that nonlinear deformation is proofreaied and correct, and flexible display may not have consistent linearity or nonlinear deformation.
In the operation of lithographic equipment 100, use for example robotic delivery device (not shown) that substrate 114 is loaded on substrate table 106.Afterwards, substrate 114 is shifted below framework 160 and independent addressable element 102 along directions X.Substrate 114 is measured by horizon sensor and/or alignment sensor 150, and uses afterwards independent addressable element 102 to make substrate by pattern exposure.For example, substrate 114 is scanned by the focal plane of optical projection system 108 (as plane), and while son bundle and therefore figure image patch S (referring to for example Figure 12) are switched to connection (ON) at least in part or whole connections (ON) or are turn-offed (OFF) by patterning device 104.Corresponding to the Characteristics creation of the pattern in patterning device 104 on substrate 114.Independent addressable element 102 can be operated, for example, for pixel-grid imaging is as described here provided.
In one embodiment, substrate 114 can be scanned completely on positive directions X, and on negative directions X, is scanned completely afterwards.In such embodiments, the extra horizon sensor on the opposition side of independent addressable element 102 and/or alignment sensor 150 may need for negative directions X scanning.
Fig. 3 shows and is such as used in Production Example, as the diagrammatic top view of the lithographic equipment according to an embodiment of the invention of flat-panel monitor (LCD, OLED display etc.) exposure substrate.As the lithographic equipment 100 as shown in Fig. 2, lithographic equipment 100 comprises substrate table 106 for keeping flat-panel display substrates 114, on up to 6 degree of freedom moving substrate platform 106 locating device 116, for determining alignment sensor 150 and the horizon sensor 150 of the aligning between independent addressable element 102 and substrate 114, described horizon sensor 50 is for determining whether substrate 114 is level with respect to the projection of the pattern from independent addressable element 102.
Lithographic equipment 100 also comprises the multiple independent addressable element 102 being arranged on framework 160.In this embodiment, each independent addressable element 102 is emitted radiation diode, for example bluish-violet laser diode.The array of the independent addressable element 102 of a large amount of (for example at least 8) that as shown in Figure 3, independent addressable element 102 is arranged to extend in the Y direction static separation.In one embodiment, array is substantially static, and they can not move significantly during projection.In addition, in one embodiment, the array of the array of a large amount of independent addressable element 102 and adjacent independent addressable element 102 is so that alternately mode is staggered on directions X.Lithographic equipment 100, especially independent addressable element 102, can be arranged to provide the imaging of pixel-grid.
In the operation of lithographic equipment 100, use for example robotic delivery device (not shown) that flat-panel display substrates 114 is loaded on substrate table 106.Afterwards, substrate 114 is shifted below framework 160 and independent addressable element 102 along directions X.Substrate 114 is measured by horizon sensor and/or alignment sensor 150, and afterwards by using independent addressable element 102 and by pattern exposure.Independent addressable element 102 can be operated, for example, for pixel-grid imaging is as described here provided.
Fig. 4 show for roll-to-roll flexible display/electronic installation according to the diagrammatic top view of the lithographic equipment of the embodiment of the present invention.As the lithographic equipment 100 showing in Fig. 3, lithographic equipment 100 comprises the multiple independent addressable element 102 being arranged on framework 160.In this embodiment, each independent addressable element 102 is emitted radiation diode, for example bluish-violet laser diode.In addition, lithographic equipment comprises alignment sensor 150 for determining the aligning between independent addressable element 102 and substrate 114 and for determining that substrate 114 is with respect to the whether horizon sensor 150 of level of the projection of the pattern from independent addressable element 102.
Lithographic equipment can also comprise the object retainer with object table 106, and substrate 114 moves in object table 106.Substrate 114 is flexible and is rolled on the roller that is connected to locating device 116, and this locating device 116 can be the motor of live-rollers.In one embodiment, substrate 114 can additionally or alternatively roll from the roller that is connected to locating device 116, and this locating device can be the motor of live-rollers.In one embodiment, have at least two rollers, roller is the substrate roller leaving that rolls, and another roller is the substrate roller arriving that rolls.In one embodiment, if for example substrate 114 is enough rigidity between roller, do not need so to arrange object table 106.In such circumstances, will still there is object retainer, for example one or more rollers.In one embodiment, lithographic equipment can provide carrier-free (carrier-less) substrate (for example carrier-free paillon foil (CLF)) and/or roll-to-roll manufacture.In one embodiment, lithographic equipment can provide the manufacture of sheet material to sheet material.
In the operation of lithographic equipment 100, flexible substrate 114 is rolled on roller and/or rolls and leave roller along directions X below framework 160 and independent addressable element 102.Substrate 114 is measured by horizon sensor and/or alignment sensor 150, and uses afterwards independent addressable element 102 to make substrate 114 by pattern exposure.Independent addressable element 102 can be operated, for example, the imaging of the pixel-grid as discussed is herein provided.
Fig. 5 show have removable independent addressable element 102 according to the diagrammatic top view of the lithographic equipment of the embodiment of the present invention.As the lithographic equipment 100 showing in Fig. 2, lithographic equipment 100 comprises substrate table 106 for keeping substrate 114, on up to 6 degree of freedom moving substrate platform 106 locating device 116, for determining that the alignment sensor 150 of the aligning between independent addressable element 102 and substrate 114 and definite substrate 114 are whether with respect to the whether horizon sensor 150 of level of the projection of the pattern from independent addressable element 102.
Lithographic equipment 100 also comprises the multiple independent addressable element 102 being arranged on framework 160.In this embodiment, each independent addressable element 102 is emitted radiation diodes, for example laser diode (such as bluish-violet laser diode).As shown in Figure 5, independent addressable element 102 is arranged to the array 200 of the independent addressable element 102 of a large amount of separation of extending along Y-direction.In addition, in one embodiment, the array 200 of a large amount of independent addressable element 102 is staggered along the adjacent array 200 of directions X and independent addressable element 102 in the mode replacing.Lithographic equipment 100, especially independent addressable element 102, can be arranged to provide the imaging of pixel-grid.But in one embodiment, lithographic equipment 100 does not need to provide the imaging of pixel-grid.More properly, lithographic equipment 100 can be not to be formed for projecting to the single pixel on substrate but the mode that is formed for projecting to the roughly continuous image on substrate by the tomographic projection of diode to substrate.
In one embodiment, one or more in multiple independent addressable element 102 is movably between position outside exposure area and exposure area, independent addressable element one or more in exposure area are used for all or part of projection of bundle 110, and independent addressable element one or more in the position outside this exposure area can any bundle 110 of projection.In one embodiment, one or more independent addressable element 102 is emitted radiation devices, it is switched on (ON) or connects at least partly (ON) in exposure area 204, be their (in the light shading region in Fig. 5) emitted radiations, and in the time being positioned at exposure area 204 outside, be turned off (OFF), i.e. their not emitted radiations.
In one embodiment, one or more independent addressable element 102 is emitted radiation devices, and it can be switched on (ON) in the outside of exposure area 204 and exposure area 204.Under such situation, if for example radiation does not suitably project in exposure area 204 by one or more independent addressable element 102, so one or more independent addressable element 102 can be switched on for the exposure that affords redress in the outside of exposure area 204.For example, with reference to figure 5, the one or more independent addressable element 102 in the array relative with exposure area 204 can be switched on (ON), for proofreading and correct inefficacy or the unsuitable tomographic projection in exposure area 204.
In one embodiment, exposure area 204 is elongated lines.In one embodiment, exposure area 204 is one-dimensional arraies of one or more independent addressable element 102.In one embodiment, exposure area 204 is two-dimensional arraies of one or more independent addressable element 102.In one embodiment, exposure area 204 is elongated.
In one embodiment, each movably independent addressable element 102 can move independently, needn't be together as a unit.
In one embodiment, one or more independent addressable element are movably, and in use at least during bundle 110 projection transversely the direction in the direction of propagation of bundle 110 move.For example, in one embodiment, one or more independent addressable element 102 is emitted radiation devices, and it moves along the direction of the direction of propagation that is substantially perpendicular to bundle 110 during the projection of bundle 110.
In one embodiment, each array 200 be can transverse shift plate, this plate has the independent addressable element 102 separating on multiple spaces of arranging along plate as shown in Figure 6.In use, each plate is along direction 208 translations.In use, the motion of independent addressable element 102 by timing controlled suitably to be arranged in exposure area 204 (being shown as the dark shadow region of Fig. 6), to all or part of is restrainted to 110 projections.For example, in one embodiment, one or more independent addressable element 102 is emitted radiation devices, turning on and off of independent addressable element 102 is timed control, make one or more independent addressable element 102 be switched on (ON) at them in exposure area 204 time, in the time that they are outer in region 204, be turned off (OFF).For example, in Fig. 6 (A), the two-dimensional array of multiple emitted radiation diodes 200 is by along direction 208 translations, and two arrays are along positive dirction 208, and one of the centre array between two arrays is along negative direction 208.The connection (ON) of emitted radiation diode 102 or shutoff (OFF) are timed control, make the specific emitted radiation diode 102 in every an array 200 in the time that they are arranged in exposure area 204, be switched on (ON), and in the time that they are outer in region 204, be turned off (OFF).Certainly, in the time that for example array 200 arrives the end of their strokes, array 200 can be advanced in the opposite direction, and two arrays are along one of the centre array between 208, two arrays of negative direction along positive dirction 208.In other example, in Fig. 6 (B), multiple one-dimensional arraies that are interweaved of emitted radiation diode 200, along direction 208 translations, replace in positive dirction 208 and in negative direction 208.The connection (ON) of emitted radiation diode 102 or shutoff (OFF) are timed control, make the particular transmission radiation-emitting semiconductor diode 102 in every an array 200 in the time that they are arranged in exposure area 204, be switched on (ON), and be positioned at region 204 at them and be turned off (OFF) when outer.Certainly, array 200 can be advanced along contrary direction.In another example, in Fig. 6 (C), the single array of emitted radiation diode 200 (be shown as one-dimensional array, but this not necessarily) is by along direction 208 translations.The connection (ON) of emitted radiation diode 102 or turn-off (OFF) and be timed control, makes the particular transmission radiation-emitting semiconductor diode 102 of every an array 200 in the time that they are arranged in exposure area 204, be switched on (ON) and is positioned at region 204 at them and is turned off (OFF) when outer.
In one embodiment, every an array 200 is rotatable plates, and this plate has the independent addressable element 102 separating on multiple spaces of arranging around plate.In use, each plate rotates around the axis 206 of himself, for example, in the shown direction of the arrow in Fig. 5.Namely, array 200 can be alternately along the clockwise and counterclockwise rotation showing as Fig. 5.Alternately, every an array 200 can be rotated in a clockwise direction or rotation in the counterclockwise direction.In one embodiment, array 200 rotates around.In one embodiment, the radian that array 200 rotates is less than a complete circle.In one embodiment, if for example substrate scans along Z direction, array 200 can be around the axis rotation along X or Y-direction extension so.In one embodiment, with reference to figure 6 (D), the independent addressable element 102 in array 200 can be arranged in edge, and along the outside radial direction projection towards substrate 114.Substrate 114 can extend around at least a portion of the side of array 200.In this case, array 200 is around the axis rotation of extending along directions X, and substrate 114 moves along directions X.
In use, the motion of independent addressable element 102 is used for being positioned at exposure area 204 by timing controlled suitably, so that by all or part of projection of bundle 110.For example, in one embodiment, one or more independent addressable element 102 is emitted radiation devices, the connection (ON) of independent addressable element 102 or turn-off (OFF) and be timed control, makes one or more independent addressable element 102 in the time that they are arranged in exposure area 204, be switched on (ON) and be positioned at region 204 at them and is turned off (OFF) when outer.Therefore, in one embodiment, emitted radiation device 102 can during movement all keep connecting, and some emitted radiation device 102 is modulated into shutoff (OFF) in exposure area 204 afterwards.May be needs in applicable covering between emitted radiation device 102 and substrate and outside exposure area 204, prevent that for covering exposure area 204 emitted radiation device 102 is switched on (ON) outside exposure area 204.Making emitted radiation device 102 as one man connect (ON) can be convenient to make emitted radiation device 102 in substantially consistent temperature during use.In one embodiment, emitted radiation device 102 can keep turn-offing (OFF) in the most of the time, and one or more emitted radiation devices 102 is switched on (ON) in exposure area 204 time.
In one embodiment, rotatable plate can have configuration as shown in Figure 7.For example, in Fig. 7 (A), shown the diagrammatic top view of rotatable plate.Rotatable plate can have array 200, this array 200 has multiple subarrays 210 (compared with rotatable plate in Fig. 5, it schematically shows the single array 200 of the independent addressable element 102 of arranging around plate) of the independent addressable element 102 of arranging around plate.In Fig. 7 (A), subarray 210 is shown as interlaced with each other, makes the independent addressable element 102 of a subarray 210 between two independent addressable element 102 of another subarray 210.But the independent addressable element 102 of subarray 210 can be aligned with each other.Independent addressable element 102 can be rotated around axis by motor 216 independently or together, and in this example, axis extends through motor 216 along the Z direction in Fig. 7 (A).Motor 216 can be connected to rotatable plate and is connected to framework (for example framework 160) or is connected to framework (for example framework 160) and is connected to rotatable plate.In one embodiment, motor 216 (or for example, being positioned at certain motor of other position) may cause the other movement of independent addressable element 102, moves individually or together no matter be.For example, motor 216 can cause the translation of one or more independent addressable element 102 in X, Y and/or Z direction.Additionally or alternatively, motor 216 may cause rotation (, the R of one or more independent addressable element 102 around X and/or Y-direction xand/or R ymotion).
In the embodiment of the rotatable plate schematically showing in Fig. 7 as vertical view (B), rotatable plate therein heart region has opening 212, and the array 200 of independent addressable element 102 is arranged on the plate of opening 212 outsides.Therefore, for example rotatable plate can form the annular disk as shown in Fig. 7 (B), and the array 200 of independent addressable element 102 is arranged around dish.Opening can reduce the weight of rotatable plate, and/or is convenient to cooling independent addressable element 102.
In one embodiment, can use support member 204 to support rotatable plate in outer circumference.Support member 214 can be bearing, for example roller bearing or gas bearing.Rotation (and/or other motion, for example, along translation and/or the R of X, Y and/or Z direction xmotion and/or R ymotion) can provide by the motor 216 as shown in Fig. 7 (A).Additionally or alternately, support member 214 can comprise and makes independent addressable element 102 (and/or provide other to move, for example, along translation and/or the R of X, Y and/or Z direction around axis A rotation xmotion and/or R ymotion) motor.
In one embodiment, with reference to figure 7 (D) and 7 (E), the rotatable plate with the array 200 of independent addressable element 102 can be connected to rotary structure 218.Rotary structure 218 can rotate around axis B by motor 220.In addition, rotatable plate can rotate with respect to rotary structure 218 by motor 216, and motor 216 makes rotatable plate rotate around axis A.In one embodiment, rotation A and B can not overlap, and therefore axis is as Fig. 7 (D) and spatially separating of showing in 7 (E).In one embodiment, rotation A and B are substantially parallel to each other.In use between exposure period, rotary structure 218 and the rotation of rotatable plate.Rotation can be coordinated, makes the independent addressable element 102 can be along roughly adjusting to a line in exposure area 204.This can compare with the embodiment of for example Fig. 5, wherein the independent addressable element 102 in exposure area 204 can be not by along roughly adjusting to a line.
In the case of having movably independent addressable element as described above, when needed can be by independent addressable element being moved to the quantity that reduces independent addressable element in exposure area 204.Therefore, can reduce heat load.
In one embodiment, for example can provide, than more independent addressable element movably of needed movably independent addressable element (on rotatable plate) in theory.The possible advantage of this layout is: if one or more movably independent addressable element is broken maybe can not operate, alternatively can use movably independent addressable element of one or more other.Additionally or alternatively, extra movably independent addressable element can have advantages of the heat load of controlling in independent addressable element, this is because movably independent addressable element is more, and the cooler of the movably independent addressable element outside exposure area 204 can be just larger.
In one embodiment, movably independent addressable element 102 is embedded in the material with lower thermal conductivity.For example, material can be ceramic, for example trichroite or the pottery based on trichroite and/or devitrified glass (Zerodur) pottery.In one embodiment, movably independent addressable element 102 is embedded in the material with high heat conductance, such as metal, and for example metal of relative lightweight, for example aluminium or titanium.
In one embodiment, array 200 can comprise temperature control layout.For example, with reference to figure 7 (F), array 200 can have fluid (for example liquid) guiding channel 222, for transmitting cooling fluid to array 200, transmission cooling fluid near array 200 or transmit cooling fluid by the cooling array of array 200.Passage 222 can be connected to applicable heat exchanger and pump 228, to make fluid pass through channel cycle.The feedway 224 being connected between passage 222 and heat exchanger and pump 228 and loop back device 226 can promote circulation and the temperature control of fluid.Sensor 234 can be arranged in array, on array or near array, and to measure the parameter of array 200, gained measurement result can be for the temperature of the fluid stream being provided by heat exchanger and pump be provided.In one embodiment, sensor 234 can be measured expansion and/or the contraction of the main body of array 200, and gained measurement result can be for the temperature of the fluid stream being provided by heat exchanger and pump be provided.Such expansion and/or contraction can be the representatives of temperature.In one embodiment, sensor 234 can be integrated with array 200 (as by becoming as shown in the sensor 234 of form a little) and/or can be discrete (as by becoming as shown in the sensor 234 of box-like formula) with array 200.The sensor 234 discrete with array 200 can be optical sensor.
In one embodiment, with reference to figure 7 (G), array 200 can have one or more heat radiator 230, for increasing the surface area of heat radiation.Heat radiator 230 can for example be positioned on the top surface of array 200 and/or on the side surface of array 200.Alternatively, one or more other heat radiator 232 can be provided for heat radiator 230 and coordinate, so that heat radiation.For example, heat radiator 232 can absorb heat from heat radiator 230, and can comprise fluid (for example liquid) guiding channel and be similar to as among Fig. 7 (F) demonstration and about its described relevant heat exchanger/pump.
In one embodiment, with reference to figure 7 (H), array 200 can be positioned at fluid limiting structure 236 places or near, this fluid limiting structure 236 is configured to keep fluid 238 to contact so that dispel the heat by fluid with the main body of array 200.In one embodiment, fluid 238 can be liquid, for example water.In one embodiment, fluid limiting structure 236 provides the sealing between the main body of it and array 200.In one embodiment, sealing can be the contactless sealing for example providing by air-flow or capillary force.In one embodiment, be similar to as discussed about fluid guiding channel 222, fluid 238 is recycled to promote heat radiation.Can provide fluid 238 by fluid supply apparatus 240.
In one embodiment, with reference to figure 7 (H), array 200 can be positioned at fluid supply apparatus 240 places or near, this fluid supply apparatus 240 is configured to the main body projection fluid 238 towards array 200, so that dispel the heat by fluid.In one embodiment, fluid 238 is gas, for example clean dry gas, N 2, inert gas etc.Although together with fluid limiting structure 236 is presented in Fig. 7 (H) with fluid supply apparatus 240, they needn't be set together.
In one embodiment, the main body of array 200 is roughly solid structures, and has for example chamber for fluid guiding channel 222.In one embodiment, the main body of array 200 is most of roughly frame-like structure of opening wide, and various parts (such as independent addressable element 102, fluid guiding channel 222 etc.) are connected to this roughly frame-like structure.The structure of this open state is convenient to gas flow and/or is increased surface area.In one embodiment, the main body of array 200 is to have multiple entering or the roughly solid construction in chamber by described main body, so that gas flow and/or increase surface area.
Although described the embodiment that provides cooling above, embodiment is alternative or heating can be provided in addition.
In one embodiment, between the exposure operating period, array 200 expects to remain on the steady temperature of constant.Therefore, for example all perhaps how independent addressable element 102 in array 200 can be energized to reach the steady temperature of expectation or in its vicinity before exposure, and arrange can be for cooling and/or heating electrodes 200, to keep steady temperature for any one or more temperature control between exposure period.In one embodiment, any one or more temperature control are arranged can be for heating electrodes 200 before exposure, to reach the steady temperature of expectation or in its vicinity.Afterwards, between exposure period, any one or more temperature control are arranged can be for cooling and/or heating electrodes 200, to keep steady temperature.Measurement result from sensor 234 can be used in the mode of feedforward and/or feedback, to keep steady temperature.In one embodiment, each in multiple arrays 200 can have identical steady temperature, or one or more array 200 in multiple array 200 can have the steady temperature of the array 200 that is different from one or more other in multiple arrays 200.In one embodiment, array 200 is heated to than the high temperature of steady temperature of expecting, and afterwards due to apply cooling arranged in any one or more temperature control and/or because the use of independent addressable element 102 is not enough to keep than the high temperature of steady temperature of expecting between exposure period temperature reduce.
In one embodiment, for improve heat control and entirety cooling, the quantity of the main body of array 200 by along and/or across increasing through exposure area.Therefore, four arrays 200 that for example show in alternate figures 5, can arrange 5,6,7,8,9,10 or more array 200.Array still less can be set, and a for example array 200, such as the single large array of whole width that covers substrate.
In one embodiment, as the lens arra of describing herein and independent addressable element be movably be associated or one.For example, lens array plate can be connected to each removable array 200, and therefore with independent addressable element 102 be can together with mobile (for example rotatable).As described above, lens array plate can be to be displaceable with respect to independent addressable element 102 (for example, along Z direction).In one embodiment, can multiple lens array plates be set for array 200, each lens array plate is associated from the different subgroup of multiple independent addressable element 102.
In one embodiment, with reference to figure 7 (I), single discrete lens 242 can be connected to each independent addressable element 102 before, and 102 are (being for example rotatable around axis A) that can move with independent addressable element.In addition, by using actuator 244, lens 242 can be to be displaceable with respect to independent addressable element 102 (for example, along Z direction).In one embodiment, with reference to figure 7 (J), independent addressable element 102 can be shifted by actuator 244 with lens 242 together with the main body 246 of array 200.In one embodiment, actuator 244 is configured to (with respect to independent addressable element 102 or together with independent addressable element 102) and only makes lens 242 be shifted along Z direction.
In one embodiment, actuator 244 is configured on up to 3 degree of freedom (Z direction, around the rotation of directions X and/or around the rotation of Y-direction) lens 242 is shifted.In one embodiment, actuator 244 is configured on up to 6 degree of freedom, lens 242 are shifted.In the time that lens 242 are removable with respect to its independent addressable element 102, can be by actuator 244 mobile lens 242 to change the focal position of lens 242 with respect to substrate.While movement together with the independent addressable element 102 of lens 242 and its, the focal position of lens 242 is constants, but is shifted about substrate.In one embodiment, the movement of lens 242 is independently controlled for each lens 242 relevant to each independent addressable element 102 in array 200.In one embodiment, the subgroup of multiple lens 242 moves together with respect to the relevant sub-group of their multiple independent addressable element 102, or with together with them, move.Under a rear situation, for lower data management expense and/or response faster, may be that to sacrifice meticulous focus control be cost.In one embodiment, the size of the radiation spot being provided by independent addressable element 102 can be adjusted by out of focus, and out of focus is larger, and the size of radiation spot is larger.
In one embodiment, with reference to figure 7 (K), the aperture structure 248 therein with aperture can be positioned at below lens 242.In one embodiment, aperture structure 248 can be located at lens 242 tops, and between lens 242 and relevant independent addressable element 102.Aperture structure 248 may limit the diffraction effect of lens 242, relevant independent addressable element 102 and/or adjacent lens 242/ independent addressable element 102.
In one embodiment, independent addressable element 102 can be emitted radiation device, for example laser diode.Such emitted radiation device can have high spatial coherence and therefore may demonstrate speckle issue.For fear of such speckle issue, should upset the radiation of being launched by emitted radiation device with respect to the phase place of another bundle part by mobile a branch of part.In one embodiment, with reference to figure 7 (L) and 7 (M), plate 250 for example can be positioned on framework 160, and independent addressable element 102 moves with respect to plate 250.In the time that independent addressable element 102 moves with respect to plate 250 and on plate 250, plate 250 has caused the destruction towards the spatial coherence of the radiation of substrate transmitting by independent addressable element 102.In one embodiment, in the time that independent addressable element 102 moves with respect to plate 250 with on plate 250, plate 250 is between lens 242 and its relevant independent addressable element 102.In one embodiment, plate 250 can be between lens 242 and substrate.
In one embodiment, with reference to figure 7 (N), spatial coherence breaking plant 252 can be between substrate and at least independent addressable element 102, this independent addressable element 102 by tomographic projection to exposure area.In one embodiment, spatial coherence breaking plant 252, between independent addressable element 102 and lens 242, and can be connected to main body 246.In one embodiment, spatial coherence breaking plant 252 is phase-modulator, oscillating plate or swivel plate.In independent addressable element 102, by radiation during towards substrate projection, spatial coherence breaking plant 252 makes to destroy the spatial coherence of the radiation of being launched by independent addressable element 102.
In one embodiment, lens arra (no matter whether being together as a unit or independently lens of conduct) (desirably via high thermal conductivity material) is connected to array 200, so that providing in more favourable cooling situation, heat is conducted to array 200 from lens arra.
In one embodiment, array 200 can comprise one or more focusing or horizon sensor 254, as horizon sensor 150.For example, sensor 254 can be configured to measure the focusing of the multiple independent addressable element 102 of each independent addressable element 102 in array 200 or array 200.Therefore, if the out-of-focus appearance of detecting can be proofreaied and correct focusing for the each independent addressable element 102 in array 200 or for the multiple independent addressable element 102 in array 200 so.Focusing can be by for example proofreading and correct along Z direction (and/or around X-axis line and/or around Y-axis line) mobile lens 242.
In one embodiment, sensor 254 and independent addressable element 102 be one (or can with array 200 in multiple independent addressable element 102 are one).With reference to figure 7 (O), schematically show exemplary sensor 254.Focus detection bundle 256 for example,,, through lens 242 and is guided towards detecting device 262 by partially silvered mirror 258 away from substrate surface by changed course (reflection).In one embodiment, focus detection bundle 256 can be the radiation for exposing, and this radiation is just altered course from substrate.In one embodiment, focus detection bundle 256 can be the special bundle directed at substrate place, and it becomes bundle 256 in the time being altered course by substrate.Before bundle 256 strikes on detecting device 262, knife-edge edge 260 (it can be aperture) is arranged in the path of bundle 256.In this example, detecting device 262 comprises at least two the radiosensitive parts (for example region or detecting device) that show in Fig. 7 (O) by separate detection device 262.At substrate, during in positive burnt position, at edge, 260 places form pictures rich in detail, and therefore the radiosensitive part of detecting device 262 receives the radiation of equal quantities.At substrate during in out-of-focus appearance, bundle 256 displacements, image by be formed on edge 260 above or below.Therefore, edge 260 will intercept the specific part of bundle 256, and a radiosensitive part of detecting device 262 will receive than another radiosensitive part of detecting device 262 radiation more in a small amount.Carry out the plane that relatively makes it possible to the substrate that the bundle 256 that obtains the bundle 256 that the altered course amount different from desired position, altered course left when residing direction and the bundle 256 that altered course are different with desired position when different with desired position of the output signal of the radiosensitive part of self-detector 262.Signal can by electronic processing so that control signal to be provided, for example, can be adjusted lens 242 by this control signal.Catoptron 258, edge 260 and detecting device 262 can be mounted to array 200.In one embodiment, detecting device 262 can be four-quadrant photovoltaic element.
In one embodiment, can provide 400 independent addressable element 102, and (at any one time) 133 carries out work.In one embodiment, can be provided with the independent addressable element 102 of 600-1200 work, and there is alternatively extra independent addressable element 102, for example, as reserved and/or for correction exposure (as for example mentioned above).The quantity of the independent addressable element 102 of work may for example depend on resist, and it need to be used to form the given dose of the radiation of pattern.That in rotatable (as independent addressable element 102) situation, independent addressable element 102 can be rotated in the frequency of 6Hz, and has the independent addressable element 102 of 1200 work in independent addressable element 102.If there is less independent addressable element 102, can under higher frequency, rotate independent addressable element 102; If there is more independent addressable element 102, can rotate independent addressable element 102 with lower frequency.
In one embodiment, compared with the array of independent addressable element 102, can use independent addressable element 102 movably to reduce the quantity of independent addressable element 102.For example, can (at any one time) provide 600-1200 independent addressable element 102 of working.In addition, the quantity reducing can produce substantially the result similar with the array of independent addressable element 102, but has advantages of one or more.For example, for the sufficient exposure ability that uses purplish blue diode array, may need the array of 100000 purplish blue diodes, for example, be arranged to 200 diode × 500 diodes.In the time of the frequencies operations with 10kHz, the luminous power of each laser diode will be 0.33mW.The electric power of each laser diode will be 150mW=35mA × 4.1V.Therefore,, for described array, electric power will be 15kW.Using movably in the embodiment of independent addressable element, 400 purplish blue diodes can be provided, wherein 133 are carried out work.While operation under the frequency of 9Mhz, the luminous power of each laser diode will be 250mW.The electric power of each laser diode will be 1000mW=240mA × 4.2V.Therefore,, for described array, electric power will be 133W.Therefore, movably the diode in independent addressable element layout can operate in the precipitous part as in the optical output power and the forward current relation curve (240mA v.35mA) that for example show in Fig. 7 (P), thereby produce the high-output power (250mW v.0.33mW) of each diode, but there is the low electric power for multiple independent addressable element (133W v.15kW).Therefore, diode can more effectively use and cause the power attenuation and/or the heat that reduce.
Therefore, in one embodiment, diode operates in the precipitous part of power/forward current curve.In the non-precipitous part of power/forward current curve, operate the incoherentness that may cause radiation.In one embodiment, diode under the luminous power that is greater than 5mW but be less than or equal to 20mW, or be less than or equal to 30mW, or be less than or equal in the situation of 40mW and operate.In one embodiment, diode does not operate under the luminous power that is greater than 300mW.In one embodiment, diode is operated with single pattern, instead of operates with multi-mode.
The quantity of the independent addressable element 102 on array 200 may depend on, particularly depend on the length of the exposure area that (and as in addition in degree noted above) array 200 will cover, the speed that array moves between exposure period, the size of spot (projects to the cross sectional dimensions of the spot substrate from independent addressable element 102, for example width/diameter), whether the intensity of the expectation that each independent addressable element should provide (is for example expected to launch for the spot on the substrate of more than one independent addressable element top the dosage of expecting, to avoid the infringement to the resist on substrate or substrate), the sweep velocity of the expectation of substrate, cost consideration, the frequency that independent addressable element can be switched on (ON) or turn-off (OFF), and for the expectation of the independent addressable element 102 of redundancy (as previously discussed, for example, for correction exposure or as reserved, if for example one or more independent addressable element fault).In one embodiment, array 200 comprises at least 100 independent addressable element 102, for example at least 200 independent addressable element, at least 400 independent addressable element, at least 600 independent addressable element, at least 1000 independent addressable element, at least 1500 independent addressable element, at least 2500 independent addressable element, or at least 5000 independent addressable element.In one embodiment, array 200 comprises and is less than 50000 independent addressable element 102, for example be less than 25000 independent addressable element, be less than 15000 independent addressable element, be less than 10000 independent addressable element, be less than 7500 independent addressable element, be less than 5000 independent addressable element, be less than 2500 independent addressable element, be less than 1200 independent addressable element, be less than 600 independent addressable element, or be less than 300 independent addressable element.
In one embodiment, array 200 for every 10cm exposure area length (, make the quantity of the independent addressable element in array carry out standardization for the exposure area length of 10cm) comprising: at least 100 independent addressable element 102, for example at least 200 independent addressable element, at least 400 independent addressable element, at least 600 independent addressable element, at least 1000 independent addressable element, at least 1500 independent addressable element, at least 2500 independent addressable element, or at least 5000 independent addressable element.In one embodiment, array 200 comprising for every 10cm exposure area length (making the quantity of the independent addressable element in array carry out standardization for the exposure area length of 10cm): be less than 50000 independent addressable element 102, for example be less than 25000 independent addressable element, be less than 15000 independent addressable element, be less than 10000 independent addressable element, be less than 7500 independent addressable element, be less than 5000 independent addressable element, be less than 2500 independent addressable element, be less than 1200 independent addressable element, be less than 600 independent addressable element, or be less than 300 independent addressable element.
In one embodiment, array 200 comprises the independent addressable element 102 of the redundancy that is less than 75%, for example 67% or still less, 50% or still less, approximately 33% or still less, 25% or still less, 20% or still less, 10% or still less, or 5% or still less.In one embodiment, array 200 comprises the independent addressable element 102 of at least 5% redundancy, for example at least 10%, at least 25%, at least 33%, at least 50%, or at least 65%.In one embodiment, array comprises the independent addressable element of approximately 67% redundancy.
In one embodiment, the size of the spot of the independent addressable element on substrate is 10 microns or still less, 5 microns or still less, and for example 3 microns or still less, 2 microns or still less, 1 micron or still less, 0.5 micron or still less, 0.3 micron or still less, or approximately 0.1 micron.In one embodiment, the size of the spot of the independent addressable element on substrate is 0.1 micron or larger, 0.2 micron or larger, and 0.3 micron or larger, 0.5 micron or larger, 0.7 micron or larger, 1 micron or larger, 1.5 microns or larger, 2 microns or larger, or 5 microns or larger.In one embodiment, the size of spot is approximately 0.1 micron.In one embodiment, the size of spot is approximately 0.5 micron.In one embodiment, the size of spot is approximately 1 micron.
In the time of operation lithographic equipment 100, substrate 114 is used for example robotic delivery device (not shown) to be loaded on substrate table 106.Substrate 114 is shifted along directions X below framework 160 and independent addressable element 102 afterwards.Substrate 114 is measured by horizon sensor and/or alignment sensor 150, and use afterwards independent addressable element 102 by substrate with pattern exposure, as described above.Independent addressable element 102 can be operated, for example, pixel-grid imaging is as discussed here provided.
Fig. 8 shows the diagrammatic side view of lithographic equipment according to an embodiment of the invention.As shown in Figure 8, lithographic equipment 100 comprises patterning device 104 and optical projection system 108.Optical projection system 108 comprises two lens 176,172.First lens 176 is arranged to receive the radiation beam 110 through ovennodulation from patterning device 104, and focuses on it by the contrast aperture in aperture diaphragm 174.Other lens (not shown) can be arranged in aperture.Radiation beam 110 is dispersed afterwards, and for example, is focused on by the second lens 172 (field lens).
Optical projection system 108 also comprises and is arranged to receive the lens arra 170 through the radiation beam 110 of ovennodulation.The different piece of the radiation beam 110 through ovennodulation corresponding from one or more independent controlled member in patterning device 104 is through the different lens separately in lens arra 170.Each lens focuses to the part separately of the radiation beam through ovennodulation 110 on the point being positioned on substrate 114.Like this, the array of radiation spot S (referring to Figure 12) is exposed on substrate 114.Although should be appreciated that 5 lens that only demonstrate in shown lens arra 170, lens arra can comprise hundreds of or thousands of lens (this is equally applicable to the independent controlled member as patterning device 104).
As shown in Figure 8, between substrate 114 and lens arra 170, free operating distance FWD is set.This moves apart from permission substrate 114 and/or lens arra 170, thereby allows for example convergence correction.In one embodiment, free operating distance in the scope of 1-3mm, for example about 1.4mm.The independent addressable element of patterning device 104 is arranged in pitch P place, and it causes associated section at the one-tenth image patch at substrate 114 places apart from P.In one embodiment, lens arra 170 can provide 0.15 or 0.18 NA.In one embodiment, becoming the size of image patch is approximately 1.6 μ m.
In this embodiment, optical projection system 108 can be 1: 1 optical projection system, and wherein the array pitch of the figure image patch on substrate 114 is identical with the array pitch of the pixel of patterning device 104.For the resolution of improvement is provided, figure image patch can be much smaller than the pixel of patterning device 104.
Fig. 9 demonstrates the diagrammatic side view of lithographic equipment according to an embodiment of the invention.In this embodiment, except lens arra 170, between patterning device 104 and substrate 114, there is no optical devices.
Lithographic equipment 100 in Fig. 9 comprises patterning device 104 and optical projection system 108.In this case, optical projection system 108 only comprises and is arranged to receive the lens arra 170 through the radiation beam 110 of ovennodulation.The different piece of the radiation beam 110 corresponding from one or more independent controlled member in patterning device 104 is through the different lens separately in lens arra 170.Each lens focuses on the part separately of the radiation beam through ovennodulation 110 on the point being positioned on substrate 114.Like this, the array of radiation spot S (referring to Figure 12) is exposed on substrate 114.Although should be appreciated that 5 lens that only demonstrate in shown lens arra 170, lens arra can comprise hundreds of or thousands of lens (this is equally applicable to the independent controlled member as patterning device 104).
As shown in Figure 8, between substrate 114 and lens arra 170, be provided with free operating distance FWD.This is apart from allowing substrate 114 and/or lens arra 170 to move, to allow for example to carry out convergence correction.The independent addressable element of patterning device 104 is arranged in pitch P place, and it has caused associated section at the one-tenth image patch at substrate 114 places apart from P.In one embodiment, lens arra 170 can provide 0.15 NA.In one embodiment, becoming the size of image patch is approximately 1.6 μ m.
Figure 10 show use about Fig. 5 above-described movably independent addressable element 102 according to the diagrammatic side view of the lithographic equipment of the embodiment of the present invention.In this embodiment, except lens arra 170, between patterning device 104 and substrate 114, there is no other optical devices.
Lithographic equipment 100 in Figure 10 comprises patterning device 104 and optical projection system 108.In this case, optical projection system 108 only comprises and is arranged to receive the lens arra 170 through the radiation beam 110 of ovennodulation.The different piece of the radiation beam 110 corresponding from one or more independent controlled member in patterning device 104 is through the different lens separately in lens arra 170.Each lens focuses on the part separately of the radiation beam through ovennodulation 110 on the point being positioned on substrate 114.Like this, the array of radiation spot S (referring to Figure 12) is exposed on substrate 114.Although should be appreciated that 5 lens in the lens arra 170 shown in only demonstrating, lens arra can comprise hundreds of or thousands of lens (this is equally applicable to the independent controlled member as patterning device 104).
As shown in Figure 8, between substrate 114 and lens arra 170, be provided with free operating distance FWD.This is apart from allowing substrate 114 and/or lens arra 170 to move, to allow for example to carry out convergence correction.The independent addressable element of patterning device 104 is arranged in pitch P place, and it has caused associated section at the one-tenth image patch at substrate 114 places apart from P.In one embodiment, lens arra 170 can provide 0.15 NA.In one embodiment, becoming the size of image patch is approximately 1.6 μ m.
Figure 11 shows multiple independent addressable element 102, specifically 6 independent addressable element 102.In this embodiment, each independent addressable element 102 is emitted radiation diode, for example bluish-violet laser diode.Two electric wires of each emitted radiation diode bridge joint, to supply an electric current to emitted radiation diode to control diode.Therefore, diode forms addressable grid.Article two, the width between electric wire is approximately 250 μ m, and emitted radiation diode has the pitch of approximately 500 μ m.
Figure 12 schematically shows how the pattern on substrate 114 can produce.Solid circles represents to project to by the lens arra MLA in optical projection system 108 array of the spot S on substrate 114.When carry out a series of exposure on substrate time, substrate 114 is moved on directions X with respect to optical projection system 108.The spot exposure SE being exposed on substrate before empty circles represents.As shown in the figure, project to the expose spot of a row R of every one spot on substrate 114 by the lens arra 170 in optical projection system 108 on substrate 114.By produced the complete pattern of substrate 114 by the summation of the spot exposure SE of all row R of every one spot S exposure.Such layout is commonly referred to " imaging of pixel-grid ".Should be appreciated that Figure 12 is that schematic accompanying drawing and spot S are possible overlapping in practice.
Visible, the array of radiation spot S is arranged (edge of substrate 114 is positioned at and is parallel to X and Y-direction) by the angle [alpha] with respect to substrate 114.This is done and makes at substrate 114 when (directions X) is mobile along direction of scanning, and each radiation spot will be by the different region of substrate, thereby allows whole substrate to be covered by the array of radiation spot S.In one embodiment, angle [alpha] is 20 ° at the most, 10 °, and for example at the most 5 °, 3 ° at the most, 1 ° at the most, 0.5 ° at the most, 0.25 ° at the most, 0.10 ° at the most, 0.05 ° at the most, or 0.01 ° at the most.In one embodiment, angle [alpha] is at least 0.0001 °, for example at least 0.001 °.Determine width and the inclined angle alpha of the array on direction of scanning according to the array pitch in the direction perpendicular to direction of scanning and image spot size, addressed for guaranteeing the whole surface area of substrate 114.
How Figure 13 schematically shows can be by using multiple light engines whole substrate 114 that exposes in single scanning, and each light engine comprises one or more independent addressable element.Produce 8 array SA of radiation spot S (not shown) by 8 light engines, these 8 light engines are arranged to two rows R1, R2 on " chessboard plate ", or interconnected, make the edge of an array of radiation spot S and the edge of the adjacent array of radiation spot S slightly overlapping.In one embodiment, light engine is arranged at least 3 rows, for example 4 rows or 5 rows.Like this, radiation belt extends across the width of substrate W, thereby allows to carry out the exposure to whole substrate in single scanning." full duration " single like this help to avoid connecting twice by exposure or more times by the possible stitching problem of process, and can also reduce machine trace, because substrate may not need to is being moved in the direction by direction transverse to substrate.Should be appreciated that the light engine that can use any applicable quantity.In one embodiment, the quantity of light engine is at least 1, for example at least 2, at least 4, at least 8, at least 10, at least 12, at least 14, or at least 17.In one embodiment, the quantity of light engine is to be less than 40, for example, be less than 30 or be less than 20.Each light engine can comprise discrete patterning device 104 and optional discrete optical projection system 108 and/or radiating system as described above.But should be appreciated that two or more light engines may have at least a portion in one or more radiating systems, patterning device 104 and/or optical projection system 108.
In the embodiment describing herein, be provided for controlling the controller of independent addressable element.For example, be in the example of emitted radiation device in independent addressable element, controller can control when independent addressable element is switched on (ON) or turn-offs (OFF), and obtains the high frequency modulated to independent addressable element.Controller can be controlled the power by the radiation of one or more independent addressable element transmittings.Controller can be modulated by the intensity of the radiation of one or more independent addressable element transmittings.Controller can control/be adjusted at independent addressable element array all or a part of on even intensity.Controller can be adjusted the radiant output of independent addressable element, such as, such as, so that image error (etendue and optical aberration (coma, astigmatism etc.)) is proofreaied and correct.
In photolithography, can by optionally by the resist layer on substrate for example, with radiant exposure (by with the radiant exposure resist layer of patterning), and on substrate, produce the feature of expecting.Receive the resist region experience chemical reaction of specific MID (" dosage threshold value "), and other region remains unchanged.Chemical difference in consequent resist layer allows resist development, and selective removal has received the region of minimum dose at least or removed the region that does not receive minimum dose.As a result, a part of substrate is still protected by resist, and the region that has removed the substrate of resist is exposed, thereby allows for example extra treatment step, and such as selective etch substrate, selective metal deposition etc. produce the feature of expecting thus.Can realize by set independent controlled member in patterning device the patterning of radiation, make to be transferred to the radiation in the resist layer region on the substrate of the feature that is positioned at expectation in sufficiently high intensity, make described region between exposure period, receive the radiation dose that is greater than dosage threshold value, and other region on substrate receives the radiation dose lower than dosage threshold value by setting corresponding independent controlled member, to provide zero or lower radiation intensity significantly.
In practice, even if independent controlled member is provided in a side of characteristic boundary and maximum radiant intensity is provided and minimized radiation intensity is provided on opposite side, may not can be changed to sharp zero-dose from given maximum dose at the radiation dose of the edge of the feature of expecting.Alternatively, due to diffraction effect, the level of radiation dose may be across reducing through zone of transition.Then, after development resist, the position on the border of the final desired character forming is passed through received dosage and is reduced to lower than the position of radiation dose threshold value and determines.Radiation dose is across through zone of transition and the distribution that declines and the thus exact position of characteristic boundary can be come more accurately to control by setting independent controlled member, this independent controlled member provide be not only maximum or minimum intensity level and also can be being radiated to of the strength level between minimum and maximum strength level on substrate, be positioned on characteristic boundary or near point on.This is commonly referred to " gray level " or " grey level ".
Gray level can provide feasible with in etching system compared with, the larger control of the position to characteristic boundary, is wherein provided to the radiation intensity of substrate and can be only configured to two values (being only maximal value and minimum value) by given independent controlled member.In one embodiment, at least three different radiation intensity values can be projected on substrate, for example at least 4 radiation intensity values, at least 8 radiation intensity values, at least 16 radiation intensity values, at least 32 radiation intensity values, at least 64 radiation intensity values, at least 100 radiation intensity values, at least 128 radiation intensity values, or at least 256 radiation intensity values.For example, if patterning device self is radiation source (array of light emitting diode or laser diode), can realize so gray level, the strength level of the radiation being for example transmitted by control.If contrast device is micro-mirror device, can realize gray level, for example, by controlling the angle of inclination of micro-reflector.In addition, can, by the multiple programmable elements in contrast device being divided into groups and being controlled at the quantity of the element in described group that is switched on preset time or turn-offs, realize gray level.
In an example, patterning device can have a series of state, comprising: (a) black state, and the contribution of the intensity distributions of the radiation that wherein provided to its respective pixel is minimum or is even zero; (b) the whitest state, maximum contribution has been made in the radiation that wherein provided; (c) the multiple states between aforementioned two states, middle contribution has been made in the radiation that wherein provided.Described state is divided into normal group and compensation group, and this normal group is for reasonable beam patterning/printing, and this compensation group is for the effect of compensating defective element.Normal group comprises black state and first group of intermediateness.This first group will be described as grey states, and they are optional, provide from the black value of minimum to respective pixel intensity until the ever-increasing contribution of specific normal maximum size.Compensation group comprises remaining second group of intermediateness and the whitest state.This second group of intermediateness will be described as white state, they be optional, so that the contribution larger than normal maximum size to be provided, be constantly increased to corresponding to the truest maximal value of white state.Although second group of intermediateness is described as white state, is to be understood that: this is to be only convenient to distinguish between normal and compensation step of exposure.Whole multiple states, by being alternately described as be at the sequence of the grey states between black and white, selectively can make it possible to carry out gray level printing.
Should be appreciated that gray level can be for object extra or alternative for mentioned above.For example, the processing of substrate after exposure can be adjusted, and makes to depend on received radiation dose level, have substrate region more than the potential response of two.For example, reception responds with first method lower than a part for the substrate of the radiation dose of first threshold; Receive higher than first threshold but respond with second method lower than a part for the substrate of the radiation dose of Second Threshold; Respond with Third Way higher than a part for the substrate of the radiation dose of Second Threshold with reception.Therefore, gray level can be for providing through the Radiation dose distribution on substrate, and it has the dosage level more than the expectation of two.In one embodiment, Radiation dose distribution has the dosage level of at least 2 expectations, the radiation dose level of for example at least 3 expectations, the radiation dose level of the radiation dose level of at least 4 expectations, at least 6 expectations or the radiation dose level of at least 8 expectations.
It is also understood that and can control Radiation dose distribution by the method except the intensity that is only controlled at the radiation that every bit place on substrate receives, as described above.For example, alternately or additionally, the duration of exposure that can be by controlling described point is controlled the radiation dose being received by the every bit on substrate.As another example, the every bit on substrate can receive the radiation in multiple continuous exposures potentially.Therefore the radiation dose, being received by every bit can alternately or additionally be controlled by the described point that exposes by the subgroup of having selected in described multiple continuous exposures.
In order to form pattern on substrate, need to during exposure process, set each the independent controlled member in patterning device for needed state at every one-phase.Therefore the control signal that, represents needed state must be transferred to each independent controlled member.Desirably, lithographic equipment comprises the controller 400 that produces control signal.The pattern forming on substrate can for example, be provided to lithographic equipment with the form (GDSII) of vector definition.For design information being converted to the control signal of each independent controlled member, controller comprises one or more data manipulation devices, and each is configured to carry out treatment step in the data stream that represents pattern.Data manipulation device can be referred to as " data path (datapath) ".
Data manipulation device in data path can be configured to carry out one or more in following function: convert the design information based on vector to bitmap pattern data; The radiation dose figure (i.e. needed Radiation dose distribution on whole substrate) that bitmap pattern data-switching is become to need; The radiation dose figure of needs is converted to the required radiation intensity value of each independent controlled member; And control signal corresponding to the radiation intensity value of the needs of each independent controlled member convert to.
In one embodiment, control signal can be supplied to independent controlled member 102 and/or other one or more devices (for example sensor) by wire communication or radio communication.In addition, can be communicated to controller 400 from independent controlled member 102 and/or for example, from the signal of other one or more devices (sensor).
With reference to Figure 14 (A), in wireless embodiment, the signal that transceiver (or being only transmitter) 406 transmittings comprise the control signal being received by transceiver (or being only receiver) 402.By one or more line 404, control signal is sent to independent controlled member 102 separately.In one embodiment, signal from transceiver 406 can comprise multiple control signals, and transceiver 402 can be decomposed into described signal multichannel multiple control signals of independent controlled member 102 separately and/or one or more other device (for example sensor).In one embodiment, wireless transmission can be to be undertaken by radio frequency (RF).
With reference to Figure 14 (B), in wired embodiment, one or more lines 404 can be connected to controller 400 independent controlled member 102 and/or other one or more devices (for example sensor).In one embodiment, can provide single line 404, each control signal be sent to the main body of array 200 and/or transmit each control signal from the main body of array 200.At the main body place of array 200, for example after control signal, can provide individually, to independent controlled member 102 and/or other one or more devices (sensor).For example, be similar to wireless example, for transmission on single line can be carried out multipath transmission to control signal, and can carry out multichannel decomposition to it in order for example to provide, to independent controlled member 102 and/or one or more other device (sensor) afterwards.In one embodiment, can provide many lines 404, for example, to transmit independent controlled member 102 and/or other one or more control signals separately of installing (sensor).In the rotatable embodiment of array 200, can provide line 404 along rotation A.In one embodiment, by motor 216 places or the sliding contact around motor 216 signal can be provided to the main body of array 200, or provide signal from the main body of array 200.This may be favourable for rotatable embodiment.Sliding contact can be for example by the brush contacting with plate.
In one embodiment, line 404 can be optical line.In this case, signal can be optical signalling, wherein for example can transmit different control signals with different wavelength.
To be similar to the mode of control signal, can be by wired or wireless mode by power supply for example, to independent controlled member 102 or other one or more devices (sensor).For example, in wired embodiment, can pass through one or more line 404 supply powers, and no matter whether be identical or different from the line that transmits signal.As mentioned above, sliding contact can be set arranges with through-put power.In wireless embodiment, can be by the RF transmitted power that is coupled.
Although concentrating on, discussion is before supplied to independent controlled member 102 and/or other one or more control signals of installing (for example sensor), but be to be understood that they also comprise, additionally or alternately by applicable configuration, signal for example, transferred to controller 400 from independent controlled member 102 and/or other one or more devices (sensor).Therefore, communication can be unidirectional (for example only arrive or for example, from independent controlled member 102 and/or one or more other device (sensor)) or two to (, arrive and for example, from independent controlled member 102 and/or other one or more devices (sensor)).For example, transceiver 402 can will for example, carry out multipath transmission from independent controlled member 102 and/or other one or more multiple signals that install (sensor) in order to transfer to transceiver 406, and now it can be resolved into independently signal by multichannel.
In one embodiment, consider the correct supply of the pattern that may affect on substrate and/or the factor of realization, can change the control signal that pattern is provided.For example, consider the heating to one or more array 200, correction can be applied to control signal.Such heating may cause the pointing direction of the change of independent controlled member 102, from inhomogeneity variation of the radiation of independent controlled member 102 etc.In one embodiment, for example, from for example sensor 234 and temperature (one or more independent controlled member 102) measurement that array 200 is relevant and/or expansion/contraction can be for changing control signal, otherwise will provide this control signal to form pattern.Therefore, for example, between exposure period, the temperature of independent controlled member 102 may change, and this variation has caused the variation of the pattern of the institute's projection providing in single stationary temperature.Therefore, consider such variation, can change control signal.Similarly, in one embodiment, can be for the pattern providing by independent controlled member 102 be provided from the result of alignment sensor and/or horizon sensor 150.Can change this pattern to proofread and correct for example distortion, this distortion may be caused by such as scrambling, the irregularity degree of substrate 114 etc. of the location of the optical devices (if any) between independent controlled member 102 and substrate 114, substrate 114.
In one embodiment, the theory of for example, physics/optical results in the desired pattern that the parameter (temperature, the distance of measuring by horizon sensor etc. measured) based on by measured causes, can determine the variation of control signal.In one embodiment, test or the empirical model of the physics/optical results in desired pattern that can be based on being caused by measured parameter, determine the variation of control signal.In one embodiment, can apply in the mode of feedforward and/or feedback the variation of control signal.
In one embodiment, lithographic equipment can comprise the sensor 500 of the characteristic of measuring radiation, and this radiation is maybe transmitted towards substrate being passed one or more independent controlled members 102.Such sensor can be spot sensor or transmission image sensor.Sensor can be for for example determining from the intensity of the radiation of independent controlled member 102, from the homogeneity of the radiation of independent controlled member 102, from the cross sectional dimensions of the radiation spot of independent controlled member 102 or area and/or from the position of the radiation spot (in X-Y plane) of independent controlled member 102.
Figure 15 shows the diagrammatic top view of lithographic equipment according to an embodiment of the invention, demonstrates some exemplary positions of sensor 500.In one embodiment, one or more sensors 500 is arranged in the substrate table 106 that keeps substrate 114 or on substrate table 106.For example, sensor 500 can be arranged on the leading edge of substrate table 106 and/or the trailing edge of substrate table 106.In this example, demonstrate four sensors 500, for the corresponding sensor of every an array 200.Expect that they are positioned at the position that can be covered by substrate 116 not.In alternative or other example, can be by sensor setting the lateral edges at substrate table 106, be desirably arranged on the position that can be covered by substrate 116 not.Sensor 500 at the leading edge place of substrate table 106 can be for the detection of the pre-exposure of independent controlled member 102.Sensor 500 at the trailing edge place of substrate table 106 can be for the detection of the post-exposure of independent controlled member 102.Sensor 500 at the lateral edges place of substrate table 106 can be for the detection between exposure period of independent controlled member 102 (" operating (on-the-fly) " detects).
With reference to Figure 16 (A), demonstrate the diagrammatic side view of a part for lithographic equipment according to an embodiment of the invention.In this example, only demonstrate single array 200, and for the sake of clarity omitted the other parts of lithographic equipment; Sensor described herein can be applied to every an array 200 or some arrays 200.In Figure 16 (A), demonstrate some other or alternative examples (except the sensor 500 of substrate table 106) of the position of sensor 500.The first example is the sensor 500 on framework 160, and this sensor for example receives, by the radiation from independent controlled member 102 of Shu Gaixiang structure 502 (reflective catoptron is arranged).In this first example, independent controlled member 102 moves in X-Y plane, and therefore the different independent controlled member in independent controlled member 102 can be configured to provide and is radiated to Shu Gaixiang structure 502.The second example in addition or alternative is the sensor 500 on framework 160, and this sensor 500 receives the radiation from independent controlled member 102 of the dorsal part (i.e. a side relative with exposing radiation is provided) from independent controlled member 102.In this second example, independent controlled member 102 moves in X-Y plane, and therefore the different independent controlled member in independent controlled member 102 can be configured to provide and is radiated to sensor 500.Although the sensor 500 in the second example is presented in the path of independent controlled member 102 at 204 places, exposure area, sensor 500 can be positioned at the position that shows sensor 510.In one embodiment, the sensor 500 on framework 160 is positioned at fixing position or can is movably by for example relevant actuator in addition.Except or alternative pre-exposure sensing and/or post-exposure sensing, the first and second examples above can be for providing " operating " sensing.The 3rd example is the sensor 500 in structure 504,506.Structure 504,506 can be by actuator 508 movably.In one embodiment, structure 504 be positioned at below the path that substrate table will move (as shown in Figure 16 (A)) or as described in the side in path.In one embodiment, structure 504 can be the position (if substrate table 106 is not there) that moves to sensor 500 places of the substrate table 106 showing by actuator 508 in Figure 16 (A), if fruit structure 504 is in the side in path, such movement can be along Z direction (as shown in Figure 16 (A)) or along X and/or Y-direction.In one embodiment, structure 506 be positioned at substrate table will move (as shown in Figure 16 (A)) place path top or in the side in path.In one embodiment, structure 506 can move to by actuator 508 position (if substrate table 106 is not there) at sensor 500 places of the substrate table 106 shown at Figure 16 (A).Structure 506 can be connected to framework 160 and be displaceable with respect to framework 160.
In the operation of characteristic of measuring the radiation that maybe will transmit towards substrate transport by one or more independent controlled members 102, by the radiation beam of movable sensor 500 and/or mobile independent controlled member 102, make sensor 500 be arranged in the path from the radiation of independent controlled member 102.Therefore, as an example, can moving substrate platform 106, sensor 500 is positioned in the path from the radiation of the independent controlled member 102 showing in Figure 16 (A).In this case, sensor 500 is positioned in the path of independent controlled member 102 at 204 places, exposure area.In one embodiment, sensor 500 can be positioned at (the independent controlled member 102 that for example side shows leftward, if Shu Gaixiang structure 502 is not there) in the path of the independent controlled member 102 outside exposure area 204.If be arranged in radiation path, sensor 500 can detect the characteristic of radiation and measuring radiation.For the ease of sensing, sensor 500 can move with respect to independent controlled member 102, and/or independent controlled member 102 can move with respect to sensor 500.
As another example, independent controlled member 102 can be moved to a position, make to strike in Shu Gaixiang structure 502 from the radiation of independent controlled member 102.Bundle is guided to the sensor 500 on framework 160 by Shu Gaixiang structure 502.For the ease of sensing, sensor 500 can move with respect to independent controlled member 102, and/or independent controlled member 102 can move with respect to sensor 500.In this example, at exposure area 204 external pelivimetry independence controlled members 102.
In one embodiment, sensor 500 can be that fix or mobile.If fixing, independent controlled member 102 is desirably movably with respect to fixing sensor 500, so that sensing.For example, array 200 can for example, move (for example rotation or translation) with respect to sensor 500 (sensor 500 on framework 160), so that carry out sensing by sensor 500.For example, if sensor 500 is movably (sensors 500 on substrate table 106), independent controlled member 102 can be held in static, for sensing, or be moved in addition for example to accelerate sensing.
Sensor 500 can be for calibrating one or more independent controlled members 102.For example, before exposure, can detect by sensor 500 position of the spot of independent controlled member 102, and correspondingly system is calibrated.This desired location adjustment exposure that afterwards can be based on spot (for example control the position of substrate 114, control the position of independent controlled member 102, control the shutoff (OFF) of independent controlled member 102 or connect (ON) etc.).In addition, can calibrate subsequently.For example, can, after exposure, before another exposure, use immediately the sensor 500 on the trailing edge of for example substrate table 106 to calibrate.Calibration can be before each exposure, after exposure at specific quantity etc. be carried out in situation.In addition, by using can " be in operation " position of the spot that detects independent controlled member 102 of sensor 500, and correspondingly adjust exposure.Perhaps, independent controlled member 102 can be calibrated again based on " being in operation " sensing.
In one embodiment, one or more independent controlled members 102 can be encoded and to can detect which independent controlled member 102 is positioned at specific position or used.In one embodiment, independent controlled member 102 can have mark, and sensor 510 can be for detection of mark, and this mark can be RFID, bar code etc.For example, each in multiple independent controlled members 102 can be moved near sensor 510, to read mark.In the situation that knowing which independent controlled member 102 near sensor 510, can know which independent controlled member 102 is near sensor 500, which independent controlled member 102 is medium in exposure area 204.In one embodiment, each independent controlled member 102 can be for the radiation with different frequency is provided, and sensor 500,510 can be for detection of which independent controlled member 102 near sensor 500,510.For example, each in multiple independent controlled members 102 can be moved near sensor 500,510, to receive the radiation from independent controlled member 102, and sensor 500,510 can multichannel decompose received radiation afterwards, with determine which independent controlled member 102 at special time near sensor 500,510.In the situation that knowing above-mentioned situation, can know which independent controlled member 102 is near sensor 500, it is medium which independent controlled member 102 is positioned at exposure area 204.
In one embodiment, as described above, position transducer can be provided to determine that one or more independent controlled members 102 is in the position up in 6 degree of freedom.For example, sensor 510 can be for position probing.In one embodiment, sensor 510 can comprise interferometer.In one embodiment, sensor 510 can comprise scrambler, and this scrambler can be for detection of one or more one-dimensional coding device gratings and/or one or more two-dimentional scrambler gratings.
In one embodiment, can provide sensor 520 for determining the characteristic of the radiation that has transferred to substrate.In this embodiment, sensor 520 is caught the radiation being altered course by substrate.In the use of example, the radiation being altered course of being caught by sensor 520 can for example, for being convenient to determine position from the spot of the radiation of independent controlled member 102 dislocation of the spot of the radiation of independent controlled member 102 (from).Particularly, sensor 520 can be caught the radiation being altered course from the part being just exposed of substrate, i.e. sub-image.The measurement of the intensity of the radiation to this afterbody changed course, can provide the instruction whether spot is suitably aimed at.For example, the signal of repetition can be provided to the duplicate measurements of this afterbody, the dislocation (for example, the signal of out-phase may represent misalignment) of spot will be shown from departing from of the signal of this repetition.Figure 16 (B) shows that the surveyed area of sensor 520 is with respect to the illustrated position of the exposure area 522 of substrate 114.In this embodiment, demonstrate 3 surveyed areas, its result can be compared and/or combine so that identify dislocation.Only need to use a surveyed area, for example in side leftward.In one embodiment, can be to use the detecting device 262 of independent controlled member 102 with the similar mode of sensor 520.For example, the radiation that the one or more independent controlled member 102 outside the exposure area 204 of the array 200 on right-hand side can be altered course for detection of the sub-image from substrate.
Figure 17 shows an embodiment of lithographic equipment.In this embodiment, multiple independent controlled members 102 guide radiation towards rotatable polygon part 600.The surface 604 that radiation strikes the polygon part 600 on it alters course radiation towards lens arra 170.Lens arra 170 guides radiation towards substrate 114.Between exposure period, polygon part 600 rotates around axis 602, thereby makes from each the bundle separately in multiple independent controlled members 102 along Y-direction across moving through lens arra 170.Particularly, in the time that each new facet of polygon part 600 and radiation are clashed into, bundle will be along positive Y-direction across repeat scanning through lens arra 170.Between exposure period, independent controlled member 102 is modulated, to provide as the pattern of expectation discussed herein.Polygon part can have the applicable limit of any amount.In addition, independent controlled member 102 is modulated with the polygon 600 of rotation in sequential, and bundle is separately struck on the lens in lens arra 170.In one embodiment, multiple independent controlled member 102 in addition can be arranged on the opposition side of polygon part, on right-hand side, to radiation is struck on the surface 606 of polygon part 600.
In one embodiment, can use the optical element of vibration to substitute polygon part 600.The optical element of vibration has the specific fixed angle with respect to lens arra 170, and can be along Y-direction translation back and forth, with make bundle along Y-direction across scanning back and forth through lens arra 170.In one embodiment, can use around axis 602 and rotate back and forth by the optical element of a radian and substitute polygon part 600.By rotating back and forth optical element by a radian, make to restraint along Y-direction across scanning back and forth through lens arra 170.In one embodiment, the optical element of polygon part 600, vibration and/or the optical element of rotation have one or more mirror surface.In one embodiment, the optical element of polygon part 600, vibration and/or the optical element of rotation comprise prism.In one embodiment, can use acousto-optic modulator to substitute polygon part 600.Acousto-optic modulator can be for across through lens arra 170 scanning beams.In one embodiment, lens arra 170 can be placed in the radiation path between optical element and/or the acousto-optic modulator of optical element, rotation of multiple independent controlled members 102 and polygon part 600, vibration.
Therefore, conventionally, compared with being divided into the width of these radiant outputs of width of exposure area, can cover with less radiant output the width of exposure area (for example substrate).In one embodiment, this can comprise with respect to exposure area and moves radiation electron gun or move radiation beam with respect to exposure area.
Figure 18 shows according to the schematic, cross-sectional side view of the lithographic equipment of the embodiment of the present invention to have movably independent controlled member 102.Lithographic equipment as shown in Figure 5 100 is the same, and lithographic equipment 100 comprises the substrate table 106 for keeping substrate, and on up to 6 degree of freedom the locating device 116 of moving substrate platform 106.
Lithographic equipment 100 also comprises the multiple independent controlled member 102 being arranged on framework 160.In this embodiment, each independent controlled member 102 is emitted radiation diodes, and for example laser diode, such as bluish-violet laser diode.Independent controlled member 102 is arranged to the array 200 of the independent controlled member 102 extending along Y-direction.Although demonstrate an array 200, lithographic equipment can have the multiple arrays 200 that for example show in Fig. 5.
In this embodiment, array 200 is rotatable plates, has discrete independent controlled member 102 on multiple spaces of arranging around plate.In use, plate rotates around the axis 206 of himself, the direction for example showing along the arrow by Fig. 5.Use motor 216 that the plate of array 200 is rotated around axis 206.In addition, the plate of array 200 can move along Z direction by motor 216, and independent controlled member 102 can be shifted with respect to substrate table 106.
In this embodiment, array 200 can have one or more heat radiator 230, to increase cooling surface area.Heat radiator 230 can be for example on the top surface of array 200.Alternatively, can provide one or more other heat radiator 232, to coordinate so that dispel the heat with heat radiator 230.For example, heat radiator 232 can absorb heat from heat radiator 230, and can comprise fluid (for example liquid) guiding channel and be similar in Fig. 7 (F) show and with respect to the relevant heat exchanger/pump of its description.
In this embodiment, lens 242 can be positioned at each independent controlled member 102 before, and can move (being for example rotatable around axis A) together with independent controlled member 102.In Figure 18, demonstrate two lens 242 and be connected to array 200.In addition, lens 242 can be displaceable with respect to independent controlled member 102 (for example, along Z direction).
In this embodiment, the aperture structure 248 wherein with aperture can be above lens 242, between lens 242 and relevant independent controlled member 102.Aperture structure 248 can limit the diffraction effect of lens 242, relevant independent controlled member 102 and/or the diffraction effect of the adjacent independent controlled member 102 of lens 242/.
In this embodiment, sensor 254 can be provided with independent addressable element 102 (or multiple independent addressable element 102) in array 200.In this embodiment, sensor 254 is arranged for detection of focusing.Focus detection bundle 256 for example,,, through lens 242 and is passed for example partially silvered mirror 258 and guides towards detecting device 262 away from substrate surface by changed course (reflection).In one embodiment, focus detection bundle 256 can be the radiation for exposing, and this radiation is just altered course from substrate.In one embodiment, focus detection bundle 256 can be the special bundle directed at substrate place, and it becomes bundle 256 in the time being altered course by substrate.About Fig. 7 (O), exemplary focus sensor is described above.Catoptron 258 and detecting device 262 can be mounted to array 200.
In this embodiment, control signal can be supplied to independent controlled member 102 and/or other one or more devices (for example sensor) by wire communication or radio communication.In addition, can be communicated to controller from independent controlled member 102 and/or for example, from the signal of other one or more devices (sensor).In Figure 18, can line 404 be set along rotation 206.In one embodiment, line 404 can be optical line.In described situation, described signal can be optical signalling, wherein for example transmits different control signals with different wavelength.To be similar to the mode of control signal, can be by wired or wireless mode for example, by extremely independent controlled member 102 or other one or more devices (sensor) of power supply.For example, in wired embodiment, can pass through one or more line 404 supply powers, and no matter it is identical or different from the line that transmits signal.In wireless embodiment, can be by the RF coupling transmitted power as shown at mark 700 places.
In this embodiment, lithographic equipment can comprise the sensor 500 of the characteristic of measuring radiation, and this radiation is maybe transmitted towards substrate being passed one or more independent controlled members 102.Such sensor can be spot sensor or transmission image sensor.Sensor can be for for example determining from the intensity of the radiation of independent controlled member 102, from the homogeneity of the radiation of independent controlled member 102, from the cross sectional dimensions of the radiation spot of independent controlled member 102 or area and/or from the position (in X-Y plane) of the radiation spot of independent controlled member 102.In this embodiment, sensor 500, and can adjacent substrate platform 106 or addressable by substrate table 106 on framework 160.
In one embodiment, not have in X-Y plane movably independent controlled member 102, independent controlled member 102 is roughly static between the exposure period of substrate in X-Y plane.Needless to say, controlled member 102 may be immovable in X-Y plane.For example, they can be movably in X-Y plane, to proofread and correct their position.The possible advantage with substantially static controlled member 102 is relatively easily power and/or data to be transferred to controlled member 102.Possible advantage in addition or alternative is that the local ability focusing on the difference in height on compensation substrate of adjusting is improved, and wherein said difference in height is greater than the depth of focus of system and is in than in the higher spatial frequency of the pitch of mobile controlled member.
In this embodiment, although controlled member 102 is substantially static, there is at least one optical element moving with respect to independent controlled member 102.The various layouts of static independent controlled member 102 are below being described in X-Y plane substantially and with respect to its optical element movably.
In the following description, in the time that situation allows, term " lens " should be usually understood as and comprise any of various types of opticses or its combination, comprise refraction type, reflective, magnetic, electromagnetic type and electrostatic optics, such as refraction type, reflective and/or diffraction-type optical element arbitrarily, it provides the function identical with mentioned lens.For example, imaging len can be specially traditional refraction type lens with focal power form, become to have focal power Schwarzschild reflect system form and/or become to have the form of zone plate of focal power.In addition,, if the effect producing is to produce the bundle of assembling on substrate, imaging len can comprise the optical devices of non-imaging.
In addition, in the following description, multiple independent controlled members 102 are made to reference, such as the catoptron in reflection mirror array modulator or multiple radiation source.But, should be appreciated that description typically refers to the modulator that is arranged to export multiple bundles more.For example, modulator can be acousto-optic modulator, to export multiple bundles from the bundle being provided by radiation source.
Figure 19 demonstration is substantially static multiple independent controlled member 102 (for example laser diode) and is the diagrammatic top view layout of a part for the movably lithographic equipment of optical element 242 with respect to it according to having in X-Y plane of the embodiment of the present invention.In this embodiment, multiple independent controlled members 102 can be connected to framework, and in X-Y plane, be substantially static, multiple imaging lens 242 move (as shown in being indicated by the rotation of wheel 801 in Figure 19) substantially with respect to these independent controlled members 102 in X-Y plane, and substrate moves along direction 803.In one embodiment, imaging len 242 is by moving with respect to independent controlled member 102 around axis rotation.In one embodiment, imaging len 242 is installed in the structure of axis (for example, along the direction showing in Figure 19) rotation and is arranged in circular mode (as partly shown in Figure 19).
Each independent controlled member 102 provides collimated beam to mobile imaging len 242.In one embodiment, independent controlled member 102 is relevant to one or more collimation lenses, so that collimated beam to be provided.In one embodiment, collimation lens is substantially static and be connected to independent controlled member 102 and connect on the framework at place in X-Y plane.
In this embodiment, the cross-sectional width of collimated beam is less than the cross-sectional width of imaging len 242.Therefore, just dropped into completely in the optical transmission part of imaging len 242 at collimated beam, independent controlled member 102 (for example laser diode) just can be switched on.In the time that bundle drops into outside the optical transmission part of imaging len 242, turn-off independent controlled member 102 (for example laser diode) afterwards.Therefore, in one embodiment, pass at any one time single imaging len 242 from the bundle of independent controlled member 102.Imaging len 242 has produced relevant imaging line 800 with respect to cross (traversal) that form of the bundle from independent controlled member 102 by each the independent controlled member 102 being switched on substrate.In Figure 19, demonstrate three imaging line 800 about each in three in Figure 19 exemplary independent controlled members 102, although other the independent controlled member 102 obviously in Figure 19 can produce relevant imaging line 800 on substrate.
In the layout of Figure 19, the pitch of imaging len 242 can be 1.5mm, for example, is slightly less than 0.5mm from the cross-sectional width (diameter) of the bundle of each independent controlled member 102.For this configuration, can write with each independent controlled member 102 line of the about 1mm of length.Therefore,, in this configuration that the diameter that is 0.5mm and imaging len 242 at beam diameter is 1.5mm, dutycycle can be up to 67%.For suitably locate independent controlled member 102 with respect to imaging len 242, be feasible across all standing of the width through substrate.Therefore,, if for example only use the laser diode of standard 5.6mm diameter, several concentric rings of laser diode so as shown in figure 19 can be for obtaining the whole coverings across the width through substrate.Therefore,, in this embodiment, can use the independent controlled member 102 (for example laser diode) still less of situation that maybe may use the independent controlled member 102 of movement described herein than the fixing array that only uses independent controlled member 102.
In this embodiment, each imaging len 242 should be identical, and this is because the imaging len of the movement by all 242 is carried out imaging by each independent controlled member 102.In this embodiment, all imaging lens 242 do not need to make an imaging, although need to have the lens of higher NA, for example, are greater than 0.3, are greater than 0.18 or be greater than 0.15.For the optical devices of so single element, diffraction-limited imaging is possible.
The focusing of the bundle on substrate, no matter where collimated beam enters lens, is all fixed to the optical axis (for example, referring to, Figure 20, its demonstration is the schematic three dimensional view of a part for the lithographic equipment of Figure 19) of imaging len 242.The shortcoming of this layout is not to be the heart far away from imaging len 242 towards the bundle of substrate, and therefore focusing error can occur, thereby may cause aliasing error.
In this embodiment, may cause halation by using the element adjustment at (for example, at independent controlled member 102 places) that do not move to focus in X-Y plane.Therefore, the focusing adjustment of expectation should occur in mobile imaging len 242.Therefore this may need than the actuator of mobile imaging len 242 higher frequencies.
Figure 21 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably, and shows three different position of rotation with respect to 242 groups of the imaging lens of independent controlled member.In this embodiment, the lithographic equipment in Figure 19 and 20 is expanded by having imaging len 242, and this imaging len 242 comprises for receiving two lens 802,804 from the collimated beam of independent controlled member 102.As shown in Figure 19, imaging len 242 moves (for example, around arranging the corresponding axis rotation of imaging len 242 with circular, fashion at least in part) with respect to independent controlled member 102 in X-Y plane.In this embodiment, before arriving imaging len 242, scioptics 806 make the bundle collimation from independent controlled member 102, but do not need in one embodiment the lens that provide such.Lens 806 are static substantially in X-Y plane.Substrate moves along directions X.
Two lens 802,804 be arranged in collimated beam from independent controlled member 102 to the light path of substrate, be the heart far away to make Shu Chaoxiang substrate.Lens 802 between independent controlled member 102 and lens 804 comprise two lens 802A, the 802B with roughly equal focal length., focus between 802B at two lens 802A from the collimated beam of independent controlled member 102, make lens 802B to collimate described bundle towards imaging len 804.Imaging len 804 is imaged onto on substrate bundle.
In this embodiment, lens 802 are for example, with specific speed (the specific revolution of per minute (RPM)) mobile in X-Y plane with respect to independent controlled member 102.Therefore,, in this embodiment, if mobile imaging len 804 moves with the speed identical with lens 802, the speed that doubles mobile imaging len 804 will be there is in X-Y plane from the collimated beam of the outgoing of lens 802.Therefore,, in this embodiment, imaging len 804 moves with the speed of the speed that is different from lens 802 with respect to independent controlled member 102.Especially, imaging len 804 for example, moves in X-Y plane with the speed (twice of the RPM of lens 802) of the twice of the speed of lens 802, and bundle will be focused on substrate by heart far away.The collimated beam of outgoing and aiming at of imaging len 804 from lens 802 in three of Figure 21 exemplary positions, are schematically shown.In addition, because the actual inscription on substrate completes the speed of the twice with described speed compared with example in Figure 19, so the power of independent controlled member 102 should be twice.
In this embodiment, mobile in X-Y plane by using (for example independent controlled member 102 places) element adjustment focuses on, may cause heart loss far away and cause halation.Therefore, should in mobile imaging len 242, there is the focusing adjustment of expectation.
In addition, in this embodiment, all imaging lens 242 do not need to make an imaging.For the optical devices of such discrete component, the imaging of diffraction-limited is possible.Approximately 65% dutycycle is possible.In one embodiment, lens 806,802A, 802B and 804 can comprise 2 non-spherical lenses and 2 spherical lenses.
In one embodiment, can use approximately 380 independent controlled members 102 (for example standard laser diode).In one embodiment, can use the group of approximately 1400 imaging lens 242.Using in the embodiment of standard laser diode, can use the group of approximately 4200 imaging lens 242, it can be arranged to 6 concentric rings on wheel.In one embodiment, the wheel of the rotation of imaging len will be with about 12000RPM rotation.
Figure 22 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably, and shows three different position of rotation with respect to the group of the imaging len 242 of independent controlled member.In this embodiment, for fear of with from as the different speed mobile lens described about Figure 21, can go out the imaging system of (telecentric in/telecentric out) for the enter/heart far away of the so-called 4f heart far away of mobile imaging lens 242 as use as shown in Figure 22.Mobile imaging len 242 comprises two imaging lens 808,810, these two imaging lens 808,810 move (being for example centered around the axis rotation of arranging at least in part 242 edges of imaging len with circular, fashion) with roughly the same speed in X-Y plane, and receive heart Shu Zuowei input far away and export telecentric imaging bundle to substrate.In the layout of 1 x magnification, the image on substrate is with equally fast with the speed of mobile imaging len 242 twices mobile.Substrate moves along directions X.In this layout, optical devices may with relatively large NA (be for example greater than 0.3, be greater than 0.18 or be greater than 0.15) make an imaging.This layout may not have two unit piece optical devices.May need to have six or more element of alignment tolerance very accurately, to obtain diffraction-limited image.Approximately 65% dutycycle is possible.In this embodiment, also with not with together with imaging len 242 movably, move or coordinate the elements relative that movably imaging len 242 moves easily to carry out part focusing.
Figure 23 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably, and shows five different position of rotation with respect to the group of the imaging len 242 of independent controlled member.In this embodiment, for fear of with about the described not identical speed mobile lens of Figure 21, and have and do not make as about the pointed optical devices to field imaging of Figure 22, the combination of static lens and mobile imaging len 242 combinations substantially in X-Y plane.With reference to Figure 23, be provided with in X-Y plane substantially static independent controlled member 102.Substantially static optional collimation lens 806 is provided in X-Y plane, for collimating the bundle from independent controlled member 102, and provides collimated beam (thering is the cross-sectional width (for example diameter) of for example 0.5mm) to lens 812.
In addition, lens 812 are substantially static and collimated beam is focused to the field lens 814 (having the cross-sectional width (for example diameter) of for example 1.5mm) of mobile imaging len 242 in X-Y plane.Lens 814 have relatively large focal length (for example f=20mm).
Movably the field lens 814 of imaging len 242 moves (being for example centered around the axis rotation of arranging at least in part 242 edges of imaging len with circular, fashion) with respect to independent controlled member 102.Field lens 814 is towards the imaging len 818 guiding bundles of imaging len 242 movably.As field lens 814, imaging len 818 moves (being for example centered around the axis rotation of arranging at least in part 242 edges of imaging len with circular, fashion) with respect to independent controlled member 102.In this embodiment, field lens 814 is to move with the roughly the same speed of imaging len 818.A pair of field lens 814 and imaging len 818 are aligned with each other.Substrate moves along directions X.
Is lens 816 between field lens 814 and imaging len 818.Lens 816 are substantially static in X-Y plane, and will be collimated to imaging len 818 from the bundle of field lens 814.Lens 816 have relatively large focal length (for example, f=20mm).
In this embodiment, the optical axis of field lens 814 should with the optical axis coincidence of corresponding imaging len 816.Field lens 814 is designed so that described bundle folding, thus the principal ray of the bundle being collimated by lens 816 and the optical axis coincidence of imaging len 818.Like this, be the heart far away towards the bundle of substrate.
Due to large f number, lens 812 and 816 can be simple spherical lenses.Field lens 814 can not affect image quality, and can also be sphere element.In this embodiment, collimation lens 806 and imaging len 818 are the lens that do not need field imaging.For the optical devices of this discrete component, diffraction-limited imaging is possible.Approximately 65% dutycycle is fine.
In one embodiment, be in rotatable situation at imaging len 242 movably, provide at least two concentric rings of independent controlled member 102 and lens, to obtain across the whole coverings through substrate width.In one embodiment, the independent controlled member 102 on these rings is arranged to the pitch place in 1.5mm.There is if used the standard laser diode that diameter is 5.6mm, may need at least 6 concentric rings for whole coverings so.Figure 24 and 25 shows according to the layout of the concentric ring of the independent controlled member 102 of these layouts.In one embodiment, this will cause approximately 380 independent controlled members 102 and static corresponding lens substantially in X-Y plane.Mobile imaging len 242 will have=4200 groups of lens 814,818 of 700 × 6 rings.By means of this configuration, can inscribe with each independent controlled member 102 line of the about 1mm of length.In one embodiment, can use the group of approximately 1400 imaging lens 242.In one embodiment, lens 812,814,816 and 818 can comprise 4 non-spherical lenses.
In this embodiment, the element adjustment of not moving (for example, at independent controlled member 102 places) by using in X-Y plane focuses on and may cause heart loss far away and cause halation.Therefore, the focusing adjustment of expectation should occur in mobile imaging len 242.Therefore this may need than the actuator of mobile imaging len 242 higher frequencies.
Figure 26 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably.In this embodiment, optics derotator (derotator) for by X-Y plane roughly static independent controlled member 102 be coupled to mobile imaging len 242.
In this embodiment, independent controlled member 102 is arranged to ring together with optional collimation lens.Two parabolic mirrors 820,822 make to be decreased to for the acceptable diameter of derotator 824 from the ring of the collimated beam of independent controlled member 102.In Figure 26, Pei Ken (pechan) prism is as derotator 824.If derotator is with the speed rotation of the half compared with the speed of imaging len 242, each independent controlled member 102 looks that with respect to its imaging len 242 be separately roughly static.Two other parabolic mirrors 826,828 make the ring extension that turns bundle from disappearing of derotator 824 to the acceptable diameter of imaging len 242 for mobile.Substrate moves along directions X.
In this embodiment, each independent controlled member 102 becomes a pair of with imaging len 242.Therefore, independent controlled member 102 cannot be arranged on concentric ring, therefore can not obtain the whole coverings across the width through substrate.Approximately 33% dutycycle is possible.In this embodiment, imaging len 242 is the lens that do not need field imaging.
Figure 27 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably.In this layout, imaging len 242 is arranged to be centered around the direction rotation that extends in X-Y plane (for example going barrel, instead of as for example about the described swiveling wheel in Figure 19-26).With reference to Figure 27, movably imaging len 242 is arranged in and is arranged on the drum of for example Y-direction rotation.The radiation from independent controlled member 102 that movably imaging len 242 is received in bulging rotation and movably extends on the line in the Y-direction between imaging len 242.In principle, the line of inscribing by the movably imaging len 242 of such drum will be parallel to the direction of scanning 831 of substrate.Therefore, be arranged to, by the line half-twist of manufacturing by the movably imaging len 242 of drum, make the line of imaging perpendicular to the direction of scanning of substrate with the derotator 830 of 45 ° of installations.Substrate moves along directions X.
For the every stripe on substrate, on drum by the movably circle of imaging len 242 of needs.If such circle can be inscribed the wide striped of 3mm on substrate and substrate is that 300mm is wide, may on drum, need so 700 (optical devices on the circumference of drum) × 100=70000 optical module.If use Acylindrical optical devices on drum, it may be less.In addition, in this embodiment, imaging optical device may need particular field imaging, and it may make optical devices more complicated.Approximately 95% dutycycle is possible.The advantage of this embodiment be the striped of imaging can there is roughly equal length and be almost parallel and be straight.In this embodiment, be relatively easy with not carrying out local focusing with the element that moves or move together in conjunction with it together with imaging len 242 movably.
Figure 28 shows to have according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its diagrammatic side view layout of a part for the lithographic equipment of optical element movably, and shows five different position of rotation with respect to the group of the imaging len 242 of independent controlled member.
With reference to Figure 28, be provided with in X-Y plane substantially static independent controlled member 102.Movably imaging len 242 comprises multiple lens combination, and each lens combination comprises field lens 814 and imaging len 818.Substrate moves along directions X.
Movably the field lens 814 of imaging len 242 (for example spherical lens) with respect to independent controlled member 102 along direction 815 move (be for example centered around imaging len 242 by least in part with circular, fashion arrange institute edge axis rotate).Field lens 814 is towards the guiding of the imaging len 818 of imaging len 242 (for example,, non-spherical lenses such as two non-spherical lenses) movably bundle.As field lens 814, imaging len 818 moves (be for example centered around imaging len 242 and arranged that with circular, fashion the axis on institute edge rotates at least in part) with respect to independent controlled member 102.In this embodiment, field lens 814 moves with substantially identical with imaging len 818 speed.
The focal plane of field lens 814 overlaps with the back focal plane of imaging len 818 at 815 places, position, and it provides enter/system that the heart far away goes out of the heart far away.Contrary with the layout of Figure 23, imaging len 818 is to particular field imaging.The focal length of field lens 814 makes the half-angle that is less than 2 to 3 ° for the field size of imaging len 818.In this case, can also for example, obtain diffraction-limited imaging with unit piece optical devices (two non-spherical surface unit pieces).Layout field lens 814 is mounted between each field lens 814 does not have spacing.In this case, the dutycycle of independent controlled member 102 can be approximately 95%.
The focal length of imaging len 818 make for substrate place be 0.2 NA, these lens will can not be greater than the diameter of field lens 814.The focal length that equals the imaging len 818 of the diameter of field lens 814 will provide the diameter of imaging len 818, and it has left the sufficient space for imaging len 818 is installed.
Due to rink corner degree, can inscribe the line slightly larger than the pitch of field lens 814.Depend in addition the focal length of imaging len 818, this provides overlapping between the line of imaging of the adjacent independent controlled member 102 on substrate.Therefore, independent controlled member 102 can be arranged in the pitch identical with imaging len 242 pitches on a ring.
Figure 29 demonstrates the schematic three dimensional view of a part for the lithographic equipment of Figure 28.In this description, 5 independent controlled members 102 show to have 5 relevant movably imaging lens group 242.Can understand, other independent controlled member 102 and relevant movably imaging lens group 242 can be provided.Substrate moves along the directions X being shown by arrow 829.In one embodiment, field lens 814 is arranged between them, there is no spacing.Pupil plane is positioned at mark 817 places.
For fear of relatively little two aspherical imaging lens 818, reduce mobile imaging len 242 optical devices amount and use standard laser diode as independent controlled member 102, in this embodiment, may use the single lens group of imaging len 242 movably to multiple independent controlled member 102 imagings.As long as independent controlled member 102 is imaged onto each movably on the field lens 814 of imaging len 242 by heart far away, corresponding imaging len 818 will be imaged onto on substrate the Shu Zaici heart far away from independent controlled member 102.If for example 8 lines are inscribed simultaneously, the focal length of the diameter of field lens 814 and imaging len 818 can be increased 8 times under identical throughput rate so, and movably the quantity of imaging len 242 can be reduced 8 times simultaneously.In addition because can be public for a part that makes independent controlled member 102 be imaged onto needed optical devices on field lens 814, so in X-Y plane substantially static optical devices can be reduced.In Figure 30, schematically show such layout of simultaneously inscribing 8 lines by the group of single movably imaging len 242, there is the rotation 821 of group of imaging len 242 and the group of imaging len 242 radius 823 apart from rotation 821.Leave enough space for installing as the standard laser diode of independent controlled member 102 from pitch to the pitch (in the time that the group by single movably imaging len 242 is inscribed 8 lines) of 12mm of 1.5mm simultaneously.In one embodiment, 224 independent controlled members 102 (for example standard laser diode) can be used.In one embodiment, can use the group of 120 imaging lens 242.In one embodiment, can use 28 static optical devices group and 224 independent controlled members 102 substantially.
In this embodiment, also relatively easily with not with together with imaging len 242 movably, move or coordinate its element moving together to carry out part focusing.As long as the heart image far away of the independent controlled member 102 on field lens 814 is moved and be held in the heart far away along optical axis, by the focus variations of the image on substrate only, and image is the heart far away by keeping.Figure 31 shows the illustrative arrangement focusing on by the mobile roof shape unit control in the layout of Figure 28 and 29.Two folding catoptrons 832 and roof shape parts (for example prism or catoptron group) 834 are placed on from the heart far away of independent controlled member 102 intrafascicular, and before field lens 814.By move along direction 833 roof shape parts 834 away from or towards folding catoptron 832, image is shifted along optical axis, and be therefore also shifted with respect to substrate.Because because axial focusing changes the quadratic power ratio that equals F/ number, there is large enlargement factor along optical axis, so the out of focus of 25 μ m with the substrate place of the bundle of F/2.5 is by the focusing displacement of the 5.625mm (37.5/2.5) 2 providing at field lens 814 places of the bundle of f/37.5.This means that roof shape parts 834 must move its half.
Figure 32 shows to have according to an embodiment of the invention according to an embodiment of the invention in X-Y plane substantially static independent controlled member and with respect to its schematic, cross-sectional side view of the lithographic equipment of optical element movably.Although Figure 32 shows the layout that is similar to Figure 23, it can be revised as the arbitrary embodiment in applicable Figure 19-22 and/or Figure 24-31.
With reference to Figure 32, lithographic equipment 100 comprises the substrate table 106 that keeps substrate, and on up to 6 degree of freedom the locating device 116 of moving substrate platform 106.
Lithographic equipment 100 is also included in the multiple independent controlled member 102 of arranging on framework 160.In this embodiment, each independent controlled member 102 is emitted radiation diodes, and for example laser diode, such as bluish-violet laser diode.Independent controlled member 102 is arranged on framework 838 and along Y-direction and extends.Although show a framework 838, multiple frameworks 838 that lithographic equipment can have with for example the array 200 in Fig. 5 shows similarly.Be arranged in further on framework 838 is lens 812 and 816.Framework 838 and therefore independent controlled member 102 are substantially static with lens 812 and 816 in X-Y plane.Framework 838, independent controlled member 102 and lens 812 and 816 can move along Z direction by actuator 836.
In this embodiment, rotatable framework 840 is set.Field lens 814 and imaging len 818 are arranged on framework 840, wherein field lens 814 and imaging len 818 be combined to form movably imaging len 242.In use, plate rotates around the axis 206 of himself, for example, along the direction being shown by arrow in Fig. 5 with respect to array 200.Use motor 216 that framework 840 is rotated around axis 206.In addition, can, by motor 216 along Z direction movable frame 840, movably imaging len 242 can be shifted with respect to substrate table 106.
In this embodiment, the aperture structure 248 therein with aperture can be above lens 812, between lens 812 and relevant independent controlled member 102.Aperture structure 248 can limit the diffraction effect of lens 812, relevant independent controlled member 102 and/or the diffraction effect of the adjacent independent controlled member 102 of lens 812/.
In one embodiment, lithographic equipment 100 comprises one or more removable plate 890 (for example rotatable plate, for example rotatable dish), and it comprises optical element, for example lens.In the embodiment of Figure 32, show the plate 890 with field lens 814 and the plate 890 with imaging len 818.In one embodiment, any reflection type optical element that lithographic equipment does not rotate in use.In one embodiment, lithographic equipment is without any reflection type optical element, and it receives from radiation any or all independent controlled members 102, and it rotates in use.In one embodiment, one or more (for example whole) plates 890 are general planar, for example, do not reach the one or more surface of plate or optical element below (or part of optical element).For example this can be by guaranteeing that plate 890 is enough thick (at least thick than the height of optical element and positioning optical element can not stretch out them) or by providing the smooth cover plate above plate 890 (not shown)s to realize.The one or more surface of guaranteeing plate is substantially smoothly can help for example in the time that equipment is in use, to reduce noise.
The xsect side-looking schematic diagram of a part for the schematically illustrated lithographic equipment of Figure 33, this lithographic equipment has roughly independent controlled member static in X-Y plane.Lithographic equipment 900 comprises substrate support structure 902 for keeping substrate and the locating device 904 for moving substrate supporting construction 902 on up to 6 degree of freedom.Substrate can be the substrate (for example silicon wafer or glass plate) that is coated with resist.
Lithographic equipment 900 also comprises the controlled radiation source 906 of multiple independences that is configured to launch multiple bundles.As shown in figure 33, radiation source 906 is self-emission formula contrast devices.In an embodiment, self-emission formula contrast device 906 is emitted radiation diodes, for example, such as light emitting diode (LED), organic LED (OLED), polymer LED (PLED) or laser diode (solid-state laser diode).In an embodiment, each independent controlled member 906 is bluish-violet color laser diode (the model no.DL-3146-151 of for example Sanyo (Sanyo)).Such diode can be by such as Sanyo, Nichia, company's supply of Osram and Nitride.In an embodiment, diode transmitting has about 365nm or the approximately radiation of the wavelength of 405nm.In an embodiment, diode can provide the output power from selecting in the scope of 0.5-200mW.In an embodiment, the size of laser diode (exposed tube core) is to select in the scope of 100-800 micron.In an embodiment, laser diode has the emitting area from selecting in the scope of 1-5 square micron.In an embodiment, laser diode has the angle of divergence of selecting from the scope of 7-44 degree.In an embodiment, diode has for providing and is more than or equal to about 6.4x10 8w/ (m 2the configuration (for example, emitting area, the angle of divergence, output power etc.) of total brightness .sr).
Independent controllable device 906 is arranged on framework 908 and can extends along Y-direction and/or directions X.Although show a framework 908, lithographic equipment can have multiple frameworks 908.On framework 908, be also furnished with lens 920.Framework 908 and therefore independent controllable device 906 and lens 920 are roughly static in X-Y plane.Can be by actuator 910 along Z direction movable frame 908, independent controllable device 906 and lens 920.
Self-emission formula contrast device 906 can be configured to transmitted beam, and optical projection system 920,924 and 930 can be configured to bundle to project in the target part of substrate.Self-emission formula contrast device 906 and optical projection system form optical devices row.Lithographic equipment 900 for example can comprise, for the actuator (motor 918) with respect to substrate mobile optical device row or its a part.The framework 912 that is furnished with field lens 924 and imaging len 930 thereon can be along with actuator rotates.Field lens 924 and imaging len 930 be combined to form movably optical devices 914.In use, framework 912 rotates around the axis 916 of himself, the direction rotation for example showing along the arrow by Figure 34.For example, by using actuator (motor 918) that framework 912 is rotated around axis 916.In addition, can framework 912 be moved along Z direction by motor 910, movably optical devices 914 can be shifted with respect to substrate support structure 902.In Figure 33, on the opposite side of lithographic equipment, demonstrate two optical devices row.In practice, lithographic equipment for example can comprise above the periphery of lithographic equipment, distribute more than the optical devices row of two.Each optical devices row comprise the fixed part of one or more self-emission formula contrast device 906 and optical projection system 920.The rotatable portion (comprising lens 924,930) of optical devices row can be used with respect to multiple optical devices row, for example, in the time that framework 912 is rotated.
Pore structure 922 wherein has hole, can be positioned at the top of lens 920 and between lens 920 and self-emission formula contrast device 906.Pore structure 922 can limit the diffraction effect of lens 920, the relevant controlled self-emission formula of independence contrast device 906 and/or the diffraction effect of adjacent lens 920/ independent controlled self-emission formula contrast device 906.
Shown equipment can be by rotating frame 912 and the substrate in moving substrate supporting construction 902 and being used below optical devices row simultaneously.Self-emission formula contrast device 906 can pass these lens by transmitted beam in the time that lens 920,924 and 930 are roughly aligned with each other.By mobile lens 924 and 930, the picture of bundle on substrate scanned on a part for substrate.By while substrate in moving substrate supporting construction 902 below optical devices row, also moved by a part for the substrate of the picture of self-emission formula contrast device 906.By connecting at high speed and/or turn-off self-emission formula contrast device 906 under the control being configured to the controller of controlling the rotation of optical devices row or its part and controlling the speed of substrate, can in the resist layer on substrate, carry out imaging to the pattern of expecting.
Figure 34 illustrates the schematic plan of the lithographic equipment of the Figure 33 with self-emission formula contrast device 906.As the lithographic equipment 900 showing in Figure 33, lithographic equipment 900 comprises substrate support structure 902 for keeping substrate 928, for the locating device 904 of moving substrate supporting construction 902 on up to 6 degree of freedom, for determining aligning between independent addressable element 906 and substrate 928 and for determining the whether aligning/leveling sensor 932 in level with respect to the projection of self-emission formula contrast device 906 of substrate 928.As shown in the figure, substrate 928 has rectangular shape, but, can process (for example circular) substrate of other shape.
Self-emission formula contrast device 906 is arranged on framework 926.Self-emission formula contrast device 906 can be emitted radiation diode, for example laser diode, for example bluish-violet color laser diode.As shown in figure 34, contrast device 906 can be arranged in the array extending in X-Y plane, and one or more contrast devices 906 is relevant to each optical devices row.Contrast device 906 is separated above the photoetching more than 4 is as shown in figure 33 taken turns.Each photoetching wheel comprises the multiple optical devices row that are installed on fixed frame 908 and rotatable framework 912.In photoetching wheel, optical devices row can be shared a part for the optical devices row that are arranged on rotatable framework 912, such as lens 924,930, making framework when rotation, the different optical devices row of lens 924,930 in may being taken turns by photoetching subsequently use.
Described array can be elongated line.In an embodiment, described array can be the one-dimensional array of the one or more controlled contrast device 906 of independence.In an embodiment, described array can be the two-dimensional array of one or more independent addressable contrast device 906.
Rotatable framework 912 can be provided, and it can be along the direction rotation being shown by described arrow.Rotatable framework can be provided with lens 924,930 (in Figure 33), so that each movably image of independent contrast device 906 to be provided.In this application, term " radially " and " tangentially " are used about rotatable framework 912 and its longitudinal axis 916.
Described equipment can be provided with the actuator that is configured to rotate rotatable framework 912, so the rotatable portion of optical devices row comprises lens 924,930.
During producing the process of pattern, in an embodiment, substrate 928 is moved with constant scan velocity V scan along direction of scanning.Substrate 928 is divided into many bands 934 along the direction that is approximately perpendicular to direction of scanning, each band 934 is associated with the optical devices row of himself, and each optical devices row comprise the fixed part of optical projection system 920 and one or more self-emission formula contrast devices 906.The rotatable portion (comprising lens 924,930) of optical devices row also can be used about other bands 934 that covered by rotatable framework 912.Each band 934 is divided into multiple adjacent and partly overlapping target parts 936 along direction of scanning.During the scanning of substrate is moved, the bundle of the contrast device 906 in the optical devices row that the target part in single band is correlated with subsequently exposes.Target part 936 have with adjacent band 934 in adjacent target part 936 overlapping and with same band 934 in adjacent target part 936 overlapping.This overlapping can be for obtaining reliable and accurate pattern on whole substrate surface.
In an embodiment, for all bands 934 in the direction that is approximately perpendicular to direction of scanning, optical devices row are set, making can be by single pass pattern generation on substrate.
In the time that pattern is projected on substrate, expect that the bundle that projects to the patterning on substrate correctly with by the surface of the substrate of pattern generation is aimed at, and with the surface of described substrate in positive burnt position.
In order to optimize the focusing of optical projection system during projection process, each optical devices row were caught before actual photoetching process starts with respect to public picture flat focus.During photoetching process, substrate surface form at pattern at that time place multiple target parts position can with public picture planar alignment.
For determine optical devices separately row whether for example, at the focal position (focal height and/or degree of tilt) of expecting with public picture plane in positive Jiao, each optical devices row comprise focus control system or focus controller, are configured to control the focal position of optical devices row separately.
The Reference 938 with many marks is installed on substrate supports device 902.In lithographic equipment, the height level of Reference is roughly corresponding with the height level of substrate 928.Reference is made with high precision and is extended on the whole width of substrate.
Each focus controller is configured to determine that optical devices separately be listed ass the focusing quality with respect to this Reference 938, and adjusts the focal position that these optical devices are listed as in the time that optical devices are listed as with respect to Reference 938 in out of focus.Each focus controller comprises focusing measurement mechanism 942 (referring to Figure 35 and 36) and focus actuator 940 (referring to Figure 33).Focus actuator 940 is installed on framework 908 and is arranged to mobile lens 920.The movement of scioptics 920, the focal position that optical devices are listed in substrate height level place can be adjusted.When the focal position being listed as at all optical assemblies of photoetching wheel must be adjusted, may expect to adjust focal position by the actuating of actuator 910, instead of adjust focal position by the actuating of all focus actuator 940 individually.In another alternative embodiment, for each optical devices row arrange actuator, and this actuator is configured to mobile whole optical devices row, the focal position being listed as to adjust optical devices with respect to Reference 938.
Figure 35 and 36 shows focusing measurement mechanism 942, to determine that each optical devices are listed as the focal position with respect to Reference 938.In order to determine focal position, Reference is arranged in below optical devices row separately.Described in contrast device 906 projections on object, restraint.Projected bundle is through lens 920, beam splitting arrangement or beam splitter 944, quarter wave plate 946 and the lens on rotatable framework 912 924,930.The referenced object 938 of described bundle reflects, and the bundle of reflection comprises the image that is arranged on the mark on Reference 938.The Shu Zaici of reflection is through lens 924,930 and quarter wave plate 946.Due to the phase shift that quarter wave plate 946 causes, the bundle of reflection is reflected by beam splitter 944 now.The bundle of reflection marches to imageing sensor 950 via lens 948, for example CCD camera.Lens 948 and imageing sensor 950 are arranged so that at image by just burnt while projecting on imageing sensor, optical devices are listed as with respect to Reference 938 in positive burnt position.
Therefore,, by the image on analysis image sensor 950, can determine whether the focal position of optical devices row is correctly adapted to Reference, and therefore correctly adapt to public picture plane.In the time that optical devices are listed as in out of focus, as shown in figure 35, the image that projects to the mark on imageing sensor 950 is also out of focus.On the contrary, at optical devices row and Reference 938, in positive when burnt, as shown in figure 36, the image that projects to the mark on imageing sensor 950 is also positive burnt.By adjusting concentrating element, the in the situation that of lens 920, based on to the analysis that projects to the image on imageing sensor 938, can make focal position adapt to Reference 938.Mark on Reference can have any adapting to and analyze to determine the whether shape in positive Jiao of image.
Can carry out by the processing unit of the part as imageing sensor 950 or processor or independent processing unit the analysis that projects to the image on imageing sensor 950.Processing unit can be the CPU (central processing unit) of lithographic equipment or a part for central processing unit.
By the adjustment for the multiple focal position of each optical devices column weight, can obtain public picture plane for all optical devices row.This realizes by moving all lens elements 920 with actuator 940, and all optical devices are listed as with respect to high-precision Reference for positive burnt position.Once by reference to obtaining this public picture plane, substrate 928 can be arranged in public picture plane during projection process, to keep in the focusing range of substrate 928 in lithographic equipment optimisedly.
The control of the focal position to all optical assemblies row and possible adjustment are carried out as the calibration steps before starting actual photoetching process conventionally to obtain public picture plane.Such calibration process can carried out during the incipient stage of lithographic equipment and between the regular alignment epoch of lithographic equipment, but also can before each lithographic projection process, be performed.
With reference now to Figure 34,, in the time starting photoetching process, substrate 928 is by mobile towards photoetching wheel with scan velocity V scan.The band of the target part on the whole width of substrate 928 of extending along the direction that is approximately perpendicular to direction of scanning is provided with pattern simultaneously.Before such target part band is taken turns by photoetching, one or more sensors 932 can be measured height and/or the level of incline at the substrate 928 of the position of target part, and the height of substrate 928 and/or level of incline and the public any difference as between plane can be determined.
In the time that in fact the band of target part arrives the optical devices row of photoetching wheel, the position of substrate 928 can be with respect to public being optimized as plane.Like this, substrate 928 is positioned in the focusing range of optical devices row, or is at least arranged to as much as possible with respect to public being optimized as plane.
Should be appreciated that because optical devices are listed in pattern generation on the whole width of substrate 928, so in the time that substrate surface adapts to public picture plane, only the position of substrate 928 is feasible with respect to the public limited correction as plane.In the embodiment of Figure 34, can be along z direction moving substrate 928, and along Rx and Ry, substrate 928 is tilted, with optimally with respect to public picture plane positioning substrate 928.
In the time sensor 932 being set for each photoetching wheel, height and/or the obliquity of photoetching wheel can be adapted to the substrate surface of taking turns the target part of the target part band being associated with photoetching separately.For example, after substrate orientation is on the suitable position of the picture plane with respect to public, the height of independent photoetching wheel and/or inclination can be adapted to the actual substrate surface elevation and/or the inclination that the focal position of the optical devices row of photoetching wheel are separately adjusted to the target part of these optical devices row.For example, the height of photoetching wheel and/or inclination can be carried out adaptation by the actuating of actuator 910.
In an embodiment, optical devices are listed as with respect to the focusing quality of target part and can are measured substrate surface and further be improved by the each optical devices row in photoetching wheel or the subgroup of optical devices row, and make focal position adapt to independently the measuring position of each optical devices row by the actuating of concentrating element 920.For example, the height of the group of independent optical devices row or optical devices row and/or inclination can be adjusted by adaptation is carried out in the position of the concentrating element 920 in the group of optical devices row separately or optical devices row.
In order to obtain the result of optimizing by focus control system, expect that the quality of Reference is acceptable.Above-mentioned method supposition Reference is ideally smooth along z direction.But even if Reference 938 is carried out machine work by the precision with high, Reference may be also faulty to a certain extent.
For this reason, can be before limiting public picture plane calibration reference object 938.The focus control system of embodiments of the invention can be for this purpose.
For example, can be directed to all optical devices row and determine picture plane, the focal position of all optical devices row can be adjusted to this as plane.Subsequently, the Reference 938 being installed on substrate support structure is determined by focusing on measurement mechanism 942 again by the focusing quality of strictly mobile along y direction (being approximately perpendicular to the direction of direction of scanning), all optical devices row.When Reference 938 is ideally smooth, because Reference 938 only moves along y direction, should not change so focus on quality.In the time must being directed in optical devices row that any adjusts focal position, Reference is not perfect smooth.Can determine described difference, and use it for the calibration of Reference 938.
Be below marked with sequence number aspect in embodiment is also provided:
1. a lithographic equipment, comprising:
Substrate holder, is configured to keep substrate;
Modulator, is configured to make the exposure area of described substrate by exposing according to multiple Shu Jinhang of the pattern modulation of expecting; With
Optical projection system, is configured to modulated bundle is projected on described substrate and comprise the lens arra that receives described multiple bundles, and described optical projection system is configured to move described lens arra with respect to described modulator between the exposure period of described exposure area.
2. according to the lithographic equipment described in embodiment 1, wherein each lens comprises at least two lens arranging along the beam path of described multiple at least one the intrafascicular bundle from described modulator to described substrate.
3. according to the lithographic equipment described in embodiment 2, the first lens in wherein said at least two lens comprises field lens, and the second lens in described at least two lens comprise imaging len.
4. according to the lithographic equipment described in embodiment 3, the focal plane of wherein said field lens overlaps with the back focal plane of described imaging len.
5. according to the lithographic equipment described in embodiment 3 or 4, wherein said imaging len comprises two non-spherical lenses.
6. according to the lithographic equipment described in any in embodiment 3-5, the focal length of wherein said field lens makes the field size of described imaging len be less than 2 to 3 ° of half-angles.
7. according to the lithographic equipment described in any in embodiment 3-6, the focal length of wherein said imaging len make to described substrate place be 0.2 NA, described imaging len is not more than the diameter of described field lens.
8. according to the lithographic equipment described in embodiment 7, the focal length of wherein said imaging len equals the diameter of described field lens.
9. according to the lithographic equipment described in any in embodiment 3-8, wherein make multiple described bundle imagings with the single combination of described field lens and described imaging len.
10. according to the lithographic equipment described in any in embodiment 3-9, also comprise focus control device, this focus control device is arranged along the beam path of described multiple at least one the intrafascicular bundle from described modulator to described field lens.
11. according to the lithographic equipment described in embodiment 10, and wherein said focus control device comprises folding mirror and movable roof shape parts.
12. according to the lithographic equipment described in embodiment 3, is also included in the lens in described path, so that the described bundle from described first lens to described the second lens is collimated.
13. according to the lithographic equipment described in embodiment 12, is wherein static for collimating the lens in described path of described bundle substantially with respect to described modulator.
14. according to the lithographic equipment described in any in embodiment 3,12 and 13, is also included in the lens in the path between described modulator and described first lens, to focus on described multiple intrafascicular at least one towards described first lens.
15. according to the lithographic equipment described in embodiment 14, is wherein substantially static for focusing on the lens in described path of described bundle with respect to described modulator.
16. according to lithographic equipment, the optical axis of wherein said field lens and the optical axis coincidence of described imaging len described in any in embodiment 3 and 12-15.
17. according to the lithographic equipment described in embodiment 2, and the first lens in wherein said at least two lens comprises at least two sub-lens, and wherein said multiple at least one intrafascicular bundle focus in the middle of described two sub-lens.
18. according to the lithographic equipment described in embodiment 17, and each in wherein said at least two sub-lens has roughly equal focal length.
19. according to the lithographic equipment described in any in embodiment 2,17 and 18, and the second lens that wherein said first lens is arranged in described at least two lens are exported the bundle being collimated.
20. according to the lithographic equipment described in any in embodiment 2 and 17-19, the first lens described in the speed that is configured to the second lens at least two lens described in being different from moves at least two lens.
21. according to the lithographic equipment described in embodiment 20, and the speed of wherein said the second lens is twices of the speed of described first lens.
22. according to the lithographic equipment described in embodiment 1, and wherein each lens comprises enter/imaging system that the heart far away goes out of the 4f heart far away.
23. according to the lithographic equipment described in embodiment 22, and the wherein said 4f heart far away enters/and imaging system that the heart far away goes out comprises at least 6 lens.
24. according to the lithographic equipment described in embodiment 1, is also included in the derotator between described modulator and described lens arra.
25. according to the lithographic equipment described in embodiment 24, and wherein said derotator comprises Pechan prism.
26. according to the lithographic equipment described in embodiment 24 or 25, and wherein said derotator is arranged to move with the half of the speed of described lens arra.
27. according to the lithographic equipment described in any in embodiment 24-26, also comprises parabolic mirror, to reduce the size of the bundle between described modulator and described derotator.
28. according to the lithographic equipment described in any in embodiment 24-27, also comprises parabolic mirror, to be increased in the size of the bundle between described derotator and described lens arra.
29. according to the lithographic equipment described in any in embodiment 1-28, and wherein said lens arra rotates with respect to described modulator.
30. according to the lithographic equipment described in any in embodiment 1-29, and wherein said modulator comprises the controlled radiation source of multiple independences for electromagnetic radiation-emitting.
31. according to the lithographic equipment described in any in embodiment 1-29, and wherein said modulator comprises micro reflector array.
32. according to the lithographic equipment described in any in embodiment 1-29, and wherein said modulator comprises radiation source and acousto-optic modulator.
33. 1 kinds of device making methods, comprise step:
Provide according to multiple bundles of the pattern modulation of expecting; With
Use the lens arra that receives described multiple bundles that described multiple bundles are projected on substrate; With
During described projection, with respect to lens arra described in described Shu Yidong.
34. according to the method described in embodiment 33, and wherein each lens comprises at least two lens that extremely beam path of described multiple at least one intrafascicular bundle of described substrate is arranged along the source from described at least one bundle.
35. according to the method described in embodiment 34, and the first lens in wherein said at least two lens comprises field lens, and the second lens in described at least two lens comprise imaging len.
36. according to the method described in embodiment 35, and the focal plane of wherein said field lens overlaps with the back focal plane of described imaging len.
37. according to the method described in embodiment 35 or 36, and wherein said imaging len comprises two non-spherical lenses.
38. according to the method described in any in embodiment 35-37, and the focal length of wherein said field lens makes the field size of described imaging len be less than 2 to 3 ° of half-angles.
39. according to the method described in any in embodiment 35-38, the focal length of wherein said imaging len make to described substrate place be 0.2 NA, described imaging len is not more than the diameter of described field lens.
40. according to the method described in embodiment 39, and the focal length of wherein said imaging len equals the diameter of described field lens.
41. according to the method described in any in embodiment 35-40, wherein uses the single combination of described field lens and described imaging len to multiple described bundle imagings.
42. according to the method described in any in embodiment 35-41, also comprises the focus control device using between source and the described field lens of described multiple at least one intrafascicular bundle.
43. according to the method described in embodiment 42, and wherein said focus control device comprises folding mirror and roof shape parts movably.
44. according to the method described in embodiment 35, also comprises and uses lens by least one the bundle collimation between described first lens and described the second lens.
45. according to the method described in embodiment 44, is wherein static for the lens that collimate described at least one bundle substantially with respect to described at least one bundle.
46. according to the method described in any in embodiment 35,44 and 45, also comprises the lens that use in the path between source and the described first lens of described at least one bundle, focuses on described multiple intrafascicular at least one towards described first lens.
47. according to the method described in embodiment 46, is wherein substantially static for the lens that focus on described at least one bundle with respect to described at least one bundle.
48. according to the method described in any in embodiment 35 and 44-47, the optical axis coincidence of the optical axis of wherein said field lens and described corresponding imaging len.
49. according to the method described in embodiment 34, and the first lens in wherein said at least two lens comprises at least two sub-lens, and wherein said multiple at least one intrafascicular bundle focus in the middle of described two sub-lens.
50. according to the method described in embodiment 49, and each in wherein said at least two sub-lens has roughly equal focal length.
51. according to the method described in any in embodiment 34,49 and 50, and the second lens that wherein said first lens is arranged in described at least two lens are exported the bundle being collimated.
52. according to the method described in any in embodiment 34 and 49-51, the first lens described in the speed that comprises the second lens at least two lens described in being different from moves at least two lens.
53. according to the method described in embodiment 52, and the speed of wherein said the second lens is twices of the speed of described first lens.
54. according to the method described in embodiment 33, and wherein each lens comprises enter/imaging system that the heart far away goes out of the 4f heart far away.
55. according to the method described in embodiment 54, and the wherein said 4f heart far away enters/and imaging system that the heart far away goes out comprises at least 6 lens.
56. according to the method described in embodiment 33, also comprises that the derotator using between source and the described lens arra of described bundle disappears and turns described Shu Jinhang.
57. according to the method described in embodiment 56, and wherein said derotator comprises Pechan prism.
58. according to the method described in embodiment 56 or 57, comprises with the half of the speed of described lens arra and moves described derotator.
59. according to the method described in any in embodiment 56-58, also comprises the size that uses parabolic mirror to reduce the bundle between source and the described derotator of described bundle.
60. according to the method described in any in embodiment 56-59, also comprises the size that uses parabolic mirror to be increased in the bundle between described derotator and described lens arra.
61. according to the method described in any in embodiment 33-60, comprises with respect to lens arra described in described Shu Xuanzhuan.
62. according to the method described in any in embodiment 33-61, wherein described multiple intrafascicular each of the transmitting of each in the controlled radiation source of multiple independence.
63. according to the method described in any in embodiment 33-61, and wherein micro reflector array is launched multiple bundles.
64. according to the method described in any in embodiment 33-61, and wherein radiation source and acousto-optic modulator produce described multiple bundles.
65. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independences of electromagnetic radiation-emitting, is configured to make the exposure area of described substrate by exposing according to multiple Shu Jinhang of the pattern modulation of expecting; With
Optical projection system, is configured to modulated bundle is projected on described substrate and comprise the lens arra that receives described multiple bundles, and described optical projection system is configured to move described lens arra with respect to the controlled radiation source of described independence between the exposure period of described exposure area.
66. 1 kinds of device making methods, comprise step:
Use the controlled radiation source of multiple independence to provide according to multiple bundles of the pattern modulation of expecting; With
Use the lens arra that receives described multiple bundles that described multiple bundles are projected on substrate; With
During described projection, move described lens arra with respect to the controlled radiation source of described independence.
67. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, is configured to make the exposure area of described substrate by exposing according to multiple Shu Jinhang of the pattern modulation of expecting; With
Optical projection system, is configured to that modulated bundle is projected on substrate and comprises the multiple lens arras for receiving described multiple bundles, and each in described array is arranged along the beam path of described multiple bundles independently.
68. according to the lithographic equipment described in embodiment 67, and wherein said optical projection system is configured to move described lens arra with respect to described modulator between the exposure period of described exposure area.
69. according to the lithographic equipment described in embodiment 67 or 68, and wherein the described lens layout in every an array is in single main body.
70. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independences of electromagnetic radiation-emitting, be configured to the exposure area of described substrate by exposing according to multiple Shu Jinhang of the pattern modulation of expecting, and be configured to move described multiple radiation source with respect to described exposure area between the exposure period of described exposure area, make to be only less than all multiple radiation sources of described multiple radiation sources described exposure area of can exposing at any one time; With
Optical projection system, is configured to modulated bundle to project on described substrate.
71. 1 kinds of lithographic equipments, comprising:
The controlled radiation source of multiple independence, being configured to provides the multiple bundles according to the pattern modulation of expecting, and at least one radiation source in described multiple radiation sources is movably between the position of its emitted radiation and the position in its not emitted radiation;
Substrate holder, is configured to keep substrate; With
Optical projection system, is configured to modulated bundle to project on described substrate.
72. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independences for electromagnetic radiation-emitting, be configured to the exposure area of described substrate by exposing according to multiple Shu Jinhang of the pattern modulation of expecting, and be configured to move at least one radiation source in described multiple radiation source with respect to described exposure area between the exposure period of described exposure area, make from the radiation of described at least one radiation source the radiation of synchronization and at least one other the radiation source from described multiple radiation sources in abutting connection with or overlapping; With
Optical projection system, is configured to modulated bundle to project on described substrate.
73. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
The controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, at least one radiation source in described multiple radiation source can emitted radiation to position and its not emitted radiation of described exposure area be extremely movably between the position of described exposure area at it, and
Optical projection system, is configured to modulated bundle to project on described substrate.
74. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move described multiple radiation source with respect to described exposure area between the exposure period of described exposure area, described modulator has to the output of multiple bundles of described exposure area, and described output has the area of the area of the output that is less than described multiple radiation sources; With
Optical projection system, is configured to modulated bundle to project on described substrate.
75. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the array of the controlled radiation source of multiple independences, being configured to provide the exposure area separately to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move every an array with respect to its exposure area separately, or move the described multiple bundles from every an array with respect to its exposure area separately, or move described array and described multiple bundle with respect to described exposure area separately, wherein in use the exposure area separately of another array in exposure area separately and described multiple array of the array in multiple arrays in abutting connection with or overlapping, with
Optical projection system, is configured to modulated bundle to project on described substrate.
76. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, or move described multiple bundle with respect to described exposure area, or move each and the described multiple bundles in described multiple radiation source with respect to described exposure area, wherein in use each in described radiation source operates in the precipitous part of its power/forward current curve separately; With
Optical projection system, is configured to modulated bundle to project on described substrate.
77. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, or move described multiple bundle with respect to described exposure area, or moving each and described multiple bundles in described multiple radiation source with respect to described exposure area, each in the controlled radiation source of wherein said independence comprises bluish-violet laser diode; With
Optical projection system, is configured to modulated bundle to project on described substrate.
78. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged at least two concentric circular array; With
Optical projection system, is configured to modulated bundle to project on described substrate.
79. according to the lithographic equipment described in embodiment 78, and at least one circular array in wherein said circular array is disposed at least one other the circular array in described circular array in the mode of interlocking.
80. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation source is around the center arrangement of structure, and described structure has the opening that extends through described structure in described multiple radiation sources; With
Optical projection system, is configured to modulated bundle to project on described substrate.
81. according to the lithographic equipment described in embodiment 80, and the outside that is also included in described radiation source place or described radiation source keeps the support member of supporting construction.
82. according to the lithographic equipment described in embodiment 81, and wherein said support member comprises the bearing that allows described structure to move.
83. according to the lithographic equipment described in embodiment 81 or 82, and wherein said support member comprises the motor of mobile described structure.
84. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area, and described multiple radiation sources are around the center arrangement of structure;
Support member, for structure described in the external support at described radiation source place or described radiation source, described structure is configured to rotate described structure or allows the described structure of rotation; With
Optical projection system, is configured to modulated bundle to project on described substrate.
85. according to the lithographic equipment described in embodiment 84, and wherein said support member comprises the bearing that allows the described structure of rotation.
86. according to the lithographic equipment described in embodiment 84 or 85, and wherein said support member comprises the motor that rotates described structure.
87. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation source is arranged on removable frame, and described removable frame is arranged in again on removable plate; With
Optical projection system, is configured to modulated bundle to project on described substrate.
88. according to the lithographic equipment described in embodiment 87, and wherein said removable frame is rotatable.
89. according to the lithographic equipment described in embodiment 87 or 88, and wherein said removable plate is rotatable.
90. according to the lithographic equipment described in embodiment 89, and the rotation center of wherein said removable plate does not overlap with the rotation center of described removable frame.
91. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged in removable frame or on removable frame;
Fluid passage, is arranged in described removable frame, so that the position of temperature control fluid at least contiguous described multiple radiation sources to be provided; With
Optical projection system, is configured to modulated bundle to project on described substrate.
92. according to the lithographic equipment described in embodiment 91, also comprises the sensor being arranged on described removable frame or removable frame.
93. according to the lithographic equipment described in embodiment 91 or 92, also comprises sensor, described sensor be arranged in contiguous described multiple radiation sources at least one radiation source position but not on described removable frame or described removable frame.
94. according to the lithographic equipment described in embodiment 92 or 93, and wherein said sensor comprises temperature sensor.
95. according to the lithographic equipment described in any in embodiment 92-94, and wherein said sensor comprises the sensor that is configured to expansion and/or the contraction of measuring described structure.
96. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged in removable frame or on removable frame;
Heat radiator, described heat radiator is arranged in described removable frame or on removable frame, so that the temperature control to described structure to be provided; With
Optical projection system, is configured to modulated bundle to project on described substrate.
97. according to the lithographic equipment described in embodiment 96, also comprises static heat radiator, to coordinate with the heat radiator in described removable frame or on removable frame.
98. according to the lithographic equipment described in embodiment 97, be included at least two heat radiator in described removable frame or on removable frame, between at least one other heat radiator in the described heat radiator at least one heat radiator in the described heat radiator of described static heat radiator in described removable frame or on removable frame and described removable frame or on described removable frame.
99. 1 kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged in removable frame or on removable frame;
Fluid supply apparatus, is configured to supply with the outside surface of fluid to described structure, to control the temperature of described structure; With
Optical projection system, is configured to modulated bundle to project on described substrate.
100. according to the lithographic equipment described in embodiment 99, and wherein said fluid supply apparatus is configured to supply gas.
101. according to the lithographic equipment described in embodiment 99, and wherein said fluid supply apparatus is configured to feed fluid.
102. according to the lithographic equipment described in embodiment 101, also comprises fluid limiting structure, is configured to keep described liquid to contact with described structure.
103. according to the lithographic equipment described in embodiment 102, and wherein said fluid limiting structure is configured to keep the sealing between described structure and described fluid limiting structure.
104. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Lens independently in structure, described lens are connected near each radiation source in described multiple radiation source or are connected to each radiation source in described multiple radiation source, and can move with radiation source separately.
105. according to the lithographic equipment described in embodiment 104, also comprises actuator, and described actuator is configured to make lens displacement with respect to its radiation source separately.
106. according to the lithographic equipment described in embodiment 104 or 105, also comprises actuator, and described actuator is configured to make lens and its radiation source displacement separately with respect to structure and its radiation source separately of supporting described lens.
107. according to the lithographic equipment described in embodiment 105 or 106, and wherein said actuator is configured to move described lens on up to 3 degree of freedom.
108. according to the lithographic equipment described in any in embodiment 104-107, also comprises the aperture structure in the downstream of at least one radiation source in described multiple radiation source.
109. according to the lithographic equipment described in any in embodiment 104-107, wherein with high thermal conductivity material, described lens is connected to structure and its radiation source separately of supporting described lens.
110. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Spatial coherence breaking plant, is configured to upset the radiation from least one radiation source in described multiple radiation sources; With
Optical projection system, is configured to modulated bundle to project on described substrate.
111. according to the lithographic equipment described in embodiment 110, and wherein said spatial coherence breaking plant comprises static plate, and described at least one radiation source is movably with respect to described plate.
112. according to the lithographic equipment described in embodiment 110, and wherein said spatial coherence breaking plant comprises at least one that select from following apparatus: phase-modulator, swivel plate or oscillating plate.
113. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Sensor, is configured to measure the focusing relevant at least one radiation source in described multiple radiation sources, and at least a portion of described sensor is in described at least one radiation source or on described at least one radiation source; With
Optical projection system, is configured to modulated bundle to project on described substrate.
114. according to the lithographic equipment described in embodiment 113, and wherein said sensor is configured to each relevant focusing of independent measurement and described radiation source.
115. according to the lithographic equipment described in embodiment 113 or 114, and wherein said sensor is edge of a knife focused detector.
116. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Transmitter, is configured to wirelessly transmitted signal and/or extremely described multiple radiation sources of power, to control respectively described multiple radiation source and/or described multiple radiation sources are powered; With
Optical projection system, is configured to modulated bundle to project on described substrate.
117. according to the lithographic equipment described in embodiment 116, and wherein said signal comprises multiple signals, and also comprises demultiplexer, to send each signal in described multiple signals towards radiation source separately.
118. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged in removable frame or on removable frame;
Single line, for controller being connected to described removable frame, so that multiple signals and/or power are sent to described multiple radiation source, to control respectively described multiple radiation source and/or it is powered; With
Optical projection system, is configured to modulated bundle to project on described substrate.
119. according to the lithographic equipment described in embodiment 118, and wherein said signal comprises multiple signals, and also comprises demultiplexer, to send each signal in described multiple signals towards radiation source separately.
120. according to the lithographic equipment described in embodiment 118 or 119, and wherein said line comprises optical line.
121. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Sensor, measures the characteristic of being launched the radiation that maybe will launch by least one radiation source in described multiple radiation sources towards described substrate; With
Optical projection system, is configured to modulated bundle to project on described substrate.
122. according to the lithographic equipment described in embodiment 121, and at least a portion of wherein said sensor is arranged on described substrate holder or described substrate holder.
123. according to the lithographic equipment described in embodiment 122, and described at least a portion of wherein said sensor is arranged on described substrate holder or described substrate holder and is supported on an outside position in residing region on described substrate holder at described substrate.
124. according to the lithographic equipment described in any in embodiment 121-123, and at least a portion of wherein said sensor is positioned at a side of described substrate, and it extends along the direction of scanning of described substrate in use substantially.
125. according to the lithographic equipment described in any in embodiment 121-124, and at least a portion of wherein said sensor is arranged in the framework that supports described removable frame or on framework.
126. according to the lithographic equipment described in any in embodiment 121-125, and wherein said sensor is configured to measure the radiation from described at least one radiation source outside described exposure area.
127. according to the lithographic equipment described in any in embodiment 121-126, and at least a portion of wherein said sensor is movably.
128. according to the lithographic equipment described in any in embodiment 121-127, also comprises controller, and described controller is configured to calibrate described at least one radiation source based on the result of described sensor.
129. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, described multiple radiation sources are arranged in removable frame or on removable frame;
Sensor, for measuring the position of described removable frame; With
Optical projection system, is configured to modulated bundle to project on described substrate.
130. according to the lithographic equipment described in embodiment 129, and at least a portion of wherein said sensor is arranged in the framework that supports described removable frame or on framework.
131. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprise the controlled radiation source of multiple independence, being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and be configured to move each in described multiple radiation source with respect to described exposure area, each in described multiple radiation sources has distinguishing mark or distinguishing mark is provided;
Sensor, is configured to detect described distinguishing mark; With
Optical projection system, is configured to modulated bundle to project on described substrate.
132. according to the lithographic equipment described in embodiment 131, and at least a portion of wherein said sensor is arranged in the framework that supports described multiple radiation sources or on framework.
133. according to the lithographic equipment described in embodiment 131 or 132, and wherein said distinguishing mark comprises the radiation frequency from radiation source separately.
134. according to the lithographic equipment described in any in embodiment 131-133, and wherein said distinguishing mark comprises at least one of from following selection: bar code, mark or radio frequency identification marker.
135. one kinds of lithographic equipments, comprising:
Substrate holder, is configured to keep substrate;
Modulator, comprises the controlled radiation source of multiple independence, and being configured to provide the exposure area to described substrate according to multiple bundles of the pattern modulation of expecting, and is configured to move each in described multiple radiation source with respect to described exposure area;
Sensor, be configured to detect altered course by described substrate, from the radiation of at least one radiation source in described multiple radiation sources; With
Optical projection system, is configured to modulated bundle to project on described substrate.
136. according to the lithographic equipment described in embodiment 135, and wherein said sensor is configured to determine according to the radiation of described changed course the position of the spot that incides the described radiation from described at least one radiation source on described substrate.
137. according to the lithographic equipment described in any in embodiment 70-136, and wherein said modulator is configured to rotate at least one radiation source around the axis of the direction of propagation that is arranged essentially parallel to described multiple bundles.
138. according to the lithographic equipment described in any in embodiment 70-137, and wherein said modulator is configured to transversely at least one radiation source of direction translation of the direction of propagation of described multiple bundles.
139. according to the lithographic equipment described in any in embodiment 70-138, and wherein said modulator comprises the beam-deflector that is configured to mobile described multiple bundles.
140. according to the lithographic equipment described in embodiment 139, and wherein said beam-deflector is to select the group from being made up of following parts: catoptron, prism and acousto-optic modulator.
141. according to the lithographic equipment described in embodiment 139, and wherein said beam-deflector comprises polygon part.
142. according to the lithographic equipment described in embodiment 139, and wherein said beam-deflector is configured to vibration.
143. according to the lithographic equipment described in embodiment 139, and wherein said beam-deflector is configured to rotation.
144. according to the lithographic equipment described in any in embodiment 70-143, and wherein said substrate holder is configured to move described substrate along the direction that described multiple bundles are set.
145. according to the lithographic equipment described in embodiment 144, and the movement of wherein said substrate is rotation.
146. according to the lithographic equipment described in any in embodiment 70-145, and wherein said multiple radiation sources can move together.
147. according to the lithographic equipment described in any in embodiment 70-146, and wherein said multiple radiation sources are arranged with circular, fashion.
148. according to the lithographic equipment described in any in embodiment 70-147, and wherein said multiple radiation sources are arranged in plate and are spaced apart from each other.
149. according to the lithographic equipment described in any in embodiment 70-148, and wherein said optical projection system comprises lens arra.
150. according to the lithographic equipment described in any in embodiment 70-149, and wherein said optical projection system is made up of lens arra in fact.
151. according to the lithographic equipment described in embodiment 149 or 150, the lens of wherein said lens arra have high numerical aperture, described lithographic equipment is arranged so that described substrate is in the outside of the focal position of the radiation relevant to described lens, effectively to reduce the numerical aperture of described lens.
152. according to the lithographic equipment described in any in embodiment 70-151, and each in wherein said radiation source comprises laser diode.
153. according to the lithographic equipment described in embodiment 152, and wherein each laser diode is configured to launch the radiation of the wavelength with about 405nm.
154. according to the lithographic equipment described in any in embodiment 70-153, also comprises temperature controller, and described temperature controller is configured between exposure period, described multiple radiation sources be remained on the temperature of constant.
155. according to the lithographic equipment described in embodiment 154, and wherein said controller was configured to before exposure described multiple radiation source heats to the temperature of temperature in described constant or approaches the temperature of the temperature of described constant.
156. according to the lithographic equipment described in any in embodiment 70-155, comprises arrange along a direction at least 3 independently arrays, and in described array, each comprises multiple radiation sources.
157. according to the lithographic equipment described in any in embodiment 70-156, and wherein said multiple radiation sources comprise at least about 1200 radiation sources.
158. according to the lithographic equipment described in any in embodiment 70-157, also comprises alignment sensor, for determining aiming between at least one radiation sources of described multiple radiation sources and described substrate.
159. according to the lithographic equipment described in any in embodiment 70-158, also comprises horizon sensor, for determining the position of described substrate with respect to the focal position of described multiple at least one intrafascicular bundle.
160. according to the lithographic equipment described in embodiment 158 or 159, also comprises controller, and described controller is configured to result based on alignment sensor and/or the result of horizon sensor changes described pattern.
161. according to the lithographic equipment described in any in embodiment 70-160, also comprise controller, the measurement of temperature or the measurement of the temperature relevant at least one radiation source in described multiple radiation sources that described controller is configured at least one radiation source based in described multiple radiation sources change described pattern.
162. according to the lithographic equipment described in any in embodiment 70-161, also comprises sensor, is launched maybe by the characteristic of the radiation being launched towards described substrate for measuring by least one radiation source of described multiple radiation sources.
163. one kinds of lithographic equipments, comprising:
The controlled radiation source of multiple independence, is configured to provide the multiple bundles according to the pattern modulation of expecting;
Lens arra, comprises multiple lenslets; With
Substrate holder, is configured to keep substrate,
Wherein during use, except described lens arra, between described multiple radiation sources and described substrate, there is no other optical devices.
164. one kinds of programmable patterning devices, comprising:
Substrate has along the array of the isolated emitted radiation diode of at least one direction on described substrate; With
Lens arra, at the radiation downstream place of described emitted radiation diode.
165. according to the programmable patterning device described in embodiment 164, wherein said lens arra comprises having multiple lenticular microlens arrays, described lenticular quantity is corresponding to the quantity of emitted radiation diode, and is positioned that the radiation through the emitted radiation diode separately in described emitted radiation diode is optionally focused on and becomes micro-spot array.
166. according to the programmable patterning device described in embodiment 164 or 165, and wherein said emitted radiation diode is spaced apart along at least two orthogonal directions.
167. according to the programmable patterning device described in any in embodiment 164-166, and wherein said emitted radiation diode is embedded in the material with lower thermal conductivity.
168. one kinds of device making methods, comprise step:
Use the controlled radiation source of multiple independence to provide towards the exposure area of substrate according to multiple bundles of the pattern modulation of expecting;
When described multiple bundle is provided, move at least one in described multiple radiation source, make to be only less than all multiple radiation sources of described multiple radiation sources described exposure area of can exposing at any one time; With
Described multiple bundles are projected on described substrate.
169. one kinds of device making methods, comprise step:
Multiple bundles of modulating according to the pattern of expecting are provided with the controlled radiation source of multiple independence;
At least one between the position of its emitted radiation and the position of its not emitted radiation in mobile described multiple radiation sources; With
Described multiple bundles are projected on described substrate.
170. one kinds of device making methods, comprise and use the controlled radiation source of multiple independence to provide according to the bundle of the pattern modulation of expecting, and only use lens arra that the bundle of the modulation from the controlled radiation source of described multiple independences is projected to substrate.
171. one kinds of device making methods, comprise step:
Use the controlled radiation source of multiple independence to provide according to multiple electromagnetic radiation beams of the pattern modulation of expecting;
Between the exposure period of exposure area, move at least one radiation source in described multiple radiation source with respect to described exposure area, make from the radiation of described at least one radiation source synchronization and radiation from least one other radiation source in described multiple radiation sources in abutting connection with or overlapping; With
Described multiple bundles are projected on substrate.
172. according to the method described in any in embodiment 168-171, and wherein mobile step comprises around the axis of the direction of propagation that is arranged essentially parallel to described multiple bundles and rotates at least one radiation source.
173. according to the method described in any in embodiment 168-172, and wherein mobile step comprises transversely at least one radiation source of direction translation of the direction of propagation of described multiple bundles.
174. according to the method described in any in embodiment 168-173, comprises by using beam-deflector to move described multiple bundle.
175. according to the method described in embodiment 174, and wherein said beam-deflector is to select in the group being made up of following parts: catoptron, prism and acousto-optic modulator.
176. according to the method described in embodiment 174, and wherein said beam-deflector comprises polygon part.
177. according to the method described in embodiment 174, and wherein said beam-deflector is configured to vibration.
178. according to the method described in embodiment 174, and wherein said beam-deflector is configured to rotation.
179. according to the method described in any in embodiment 168-178, comprises that the direction that makes described substrate be set up place along described multiple bundles moves.
180. according to the method described in embodiment 179, and the motion of wherein said substrate is rotation.
181. according to the method described in any in embodiment 168-180, comprises mobile described multiple radiation sources together.
182. according to the method described in any in embodiment 168-181, and wherein said multiple radiation sources are arranged with circular, fashion.
183. according to the method described in any in embodiment 168-182, and wherein said multiple radiation sources are arranged in plate and are spaced apart from each other.
184. according to the method described in any in embodiment 168-183, and wherein said projection step comprises by using lens arra that the image of described intrafascicular each bundle is formed on described substrate.
185. according to the method described in any in embodiment 168-184, and wherein said projection step comprises and in fact only uses lens arra that the image of described intrafascicular each bundle is formed on described substrate.
186. according to the method described in any in embodiment 168-185, the each laser diode that comprises in wherein said radiation source.
187. according to the method described in embodiment 186, and wherein each laser diode is configured to launch the radiation of the wavelength with about 405nm.
188. one kinds according to flat-panel monitor that in embodiment 168-187, the method described in any is manufactured.
189. one kinds according to integrated circuit (IC)-components that in embodiment 168-187, the method described in any is manufactured.
190. one kinds of radiating systems, comprising:
Multiple movably radiating curtains, each radiating curtain comprises the controlled radiation source of multiple independence, the controlled radiation source of described multiple independence is configured to provide the multiple bundles according to the pattern modulation of expecting; With
Motor, is configured to each in mobile described radiating curtain.
191. according to the radiating system described in embodiment 190, and wherein said motor is configured to rotate each in described radiating curtain around the axis of the direction of propagation that is arranged essentially parallel to described multiple bundles.
192. according to the radiating system described in embodiment 190 or 191, and wherein said motor is configured to transversely each in radiating curtain described in the direction translation of the direction of propagation of described multiple bundles.
193. according to the radiating system described in any in embodiment 190-192, also comprises beam-deflector, and described beam-deflector is configured to mobile described multiple bundles.
194. according to the radiating system described in embodiment 193, and wherein said beam-deflector is to select in the group being made up of following parts: catoptron, prism and acousto-optic modulator.
195. according to the radiating system described in embodiment 193, and wherein said beam-deflector comprises polygon part.
196. according to the radiating system described in embodiment 193, and wherein said beam-deflector is configured to vibration.
197. according to the radiating system described in embodiment 193, and wherein said beam-deflector is configured to rotation.
198. according to the radiating system described in any in embodiment 190-197, and multiple radiation sources of each radiating curtain in wherein said radiating curtain can move together.
199. according to the radiating system described in any in embodiment 190-198, and multiple radiation sources of each radiating curtain in wherein said radiating curtain are arranged with circular, fashion.
200. according to the radiating system described in any in embodiment 190-199, and described multiple radiation sources of each radiating curtain in wherein said radiating curtain are arranged in plate and are spaced apart from each other.
201. according to the radiating system described in any in embodiment 190-200, also comprises the lens arra being associated with each radiating curtain in described radiating curtain.
202. according to the radiating system described in embodiment 201, and each in described multiple radiation sources of each radiating curtain in wherein said radiating curtain is associated with the lens in the lens arra being associated with described radiating curtain.
203. according to the radiating system described in any in embodiment 190-202, and each source in multiple sources of each radiating curtain in wherein said radiating curtain comprises laser diode.
204. according to the radiating system described in embodiment 203, and wherein each laser diode is configured to launch the radiation of the wavelength with about 405nm.
205. one kinds for the lithographic equipment with radiant exposure by substrate, and described lithographic equipment comprises the programmable patterning device with 100-25000 self-emission formula independence addressable element.
206. according to the lithographic equipment described in embodiment 205, comprises at least 400 self-emission formula independence addressable element.
207. according to the lithographic equipment described in embodiment 205, comprises at least 1000 self-emission formula independence addressable element.
208. according to the lithographic equipment described in any in embodiment 205-207, comprises and is less than 10000 self-emission formula independence addressable element.
209. according to the lithographic equipment described in any in embodiment 205-207, comprises and is less than 5000 self-emission formula independence addressable element.
210. according to the lithographic equipment described in any in embodiment 205-209, and wherein said self-emission formula independence addressable element is laser diode.
211. according to the lithographic equipment described in any in embodiment 205-209, and wherein said self-emission formula independence addressable element is arranged to have the spot size on described substrate of selecting from the scope of 0.1-3 micron.
212. according to the lithographic equipment described in any in embodiment 205-209, and wherein said self-emission formula independence addressable element is arranged to have the spot size on described substrate of approximately 1 micron.
213. one kinds for the lithographic equipment with radiant exposure by substrate, described lithographic equipment comprises programmable patterning device, described programmable patterning device makes, and taking the exposure field length of 10cm as benchmark, has 100-25000 self-emission formula independence addressable element.
214. according to the lithographic equipment described in embodiment 213, comprises at least 400 self-emission formula independence addressable element.
215. according to the lithographic equipment described in embodiment 213, comprises at least 1000 self-emission formula independence addressable element.
216. according to the lithographic equipment described in any in embodiment 213-215, comprises and is less than 10000 self-emission formula independence addressable element.
217. according to the lithographic equipment described in any in embodiment 213-215, comprises and is less than 5000 self-emission formula independence addressable element.
218. according to the lithographic equipment described in any in embodiment 213-217, and wherein said self-emission formula independence addressable element is laser diode.
219. according to the lithographic equipment described in any in embodiment 213-217, and wherein said self-emission formula independence addressable element is arranged to have the spot size on described substrate of selecting from the scope of 0.1-3 micron.
220. according to the lithographic equipment described in any in embodiment 213-217, and wherein said self-emission formula independence addressable element is arranged to have the spot size on described substrate of approximately 1 micron.
221. one kinds of programmable patterning devices, comprise rotatable dish, and described dish has 100-25000 self-emission formula independence addressable element.
222. according to the programmable patterning device described in embodiment 221, and wherein said dish comprises at least 400 self-emission formula independence addressable element.
223. according to the programmable patterning device described in embodiment 221, and wherein said dish comprises at least 1000 self-emission formula independence addressable element.
224. according to the programmable patterning device described in any in embodiment 221-223, and wherein said dish comprises and is less than 10000 self-emission formula independence addressable element.
225. according to the programmable patterning device described in any in embodiment 221-223, and wherein said dish comprises and is less than 5000 self-emission formula independence addressable element.
226. according to the programmable patterning device described in any in embodiment 221-225, and wherein said self-emission formula independence addressable element is laser diode.
227. use one or more the present invention in manufacture flat-panel monitor.
228. use one or more the present invention in integrated antenna package.
229. one kinds of photoetching methods, comprise use the programmable patterning device with self-emission formula element by substrate with radiant exposure, be wherein less than 10kW in the power consumption of the described programmable patterning device of self-emission formula element described in described exposure manipulate.
230. according to the method described in embodiment 229, and wherein said power consumption is less than 5kW.
231. according to the method described in embodiment 229 or 230, and wherein said power consumption is 100mW at least.
232. according to the method described in any in embodiment 229-231, and wherein said self-emission formula element is laser diode.
233. according to the method described in embodiment 232, and wherein said laser diode is bluish-violet laser diode.
234. one kinds of photoetching methods, comprise use the programmable patterning device with self-emission formula element by substrate with radiant exposure, wherein the output of the light of each emission-type element is 1mW at least in use.
235. according to the method described in embodiment 234, and the output of wherein said light is 10mW at least.
236. according to the method described in embodiment 234, and the output of wherein said light is 50mW at least.
237. according to the method described in any in embodiment 234-236, and wherein said light output is less than 200mW.
238. according to the method described in any in embodiment 234-237, and wherein said self-emission formula element is laser diode.
239. according to the method described in embodiment 238, and wherein said laser diode is bluish-violet laser diode.
240. according to the method described in embodiment 234, and wherein said light output is greater than 5mW but is less than or equal to 20mW.
241. according to the method described in embodiment 234, and wherein said light output is greater than 5mW but is less than or equal to 30mW.
242. according to the method described in embodiment 234, and wherein said light output is greater than 5mW but is less than or equal to 40mW.
243. according to the method described in any in embodiment 234-242, and wherein said self-emission formula element operates with single-mode.
244. one kinds of lithographic equipments, comprising:
Programmable patterning device, has self-emission formula element; With
Rotatable framework, has for receiving the optical element from the radiation of described self-emission formula element, and described optical element is refraction type optical element.
245. one kinds of lithographic equipments, comprising:
Programmable patterning device, has self-emission formula element; With
Rotatable framework, has for receiving the optical element from the radiation of described self-emission formula element, and described rotatable framework is not for receiving the reflection type optical element from the radiation of any described self-emission formula element or all described self-emission formula elements.
246. one kinds of lithographic equipments, comprising:
Programmable patterning device; With
Rotatable framework, described rotatable framework comprises the plate with optical element, described in there is the plate of optical element surface be smooth.
247. use one or more in described invention in the time manufacturing flat-panel monitor.
248. use one or more in described invention in the encapsulation of integrated circuit.
249. one kinds of flat-panel monitors, described flat pannel display is manufactured according to any means in described method.
250. one kinds of integrated circuit (IC)-components of manufacturing according to any means in described method.
251. one kinds of lithographic equipments, comprising:
Optical devices row, be configured to bundle to project in the target part of substrate, described optical devices row comprise the radiation source that is configured to provide bundle, and optical projection system, described optical projection system is configured to described bundle to project in described target part, wherein said optical devices are listed as on the fixed part that is partly arranged on lithographic equipment, and are partly arranged in the part that can rotate of described lithographic equipment, and wherein said optical devices row have focal height;
Scanning movement actuator, is configured to be listed as with sweep velocity moving substrate with respect to optical devices along direction of scanning; With
Focus controller, be configured to control optical devices and be listed as the focal height with respect to Reference, wherein, focus controller comprises focusing measurement mechanism and focus actuator, described focusing measurement mechanism is configured to determine the focusing quality on Reference, and described focus actuator is configured to adjust based on fixed focusing quality the focal height of optical devices row.
252. according to the lithographic equipment described in embodiment 251, wherein Reference comprises multiple marks, focus on the imageing sensor that measurement mechanism comprises the image that is arranged to receive a mark in multiple marks, wherein focus on quality and determined by the image based on projecting on imageing sensor.
253. according to the lithographic equipment described in embodiment 252, wherein focuses on measurement mechanism and comprises beam splitter and quarter wave plate, is arranged to be directed to imageing sensor from the image of Reference reflection.
254. according to the lithographic equipment described in embodiment 251, wherein focuses on measurement mechanism and is integrated in optical devices row.
255. according to the lithographic equipment described in embodiment 251, and wherein said optical devices row comprise at least one movably concentrating element, and wherein focus actuator is connected to described concentrating element with the described focal height of mobile adjustment by described concentrating element.
256. according to the lithographic equipment described in embodiment 251, and wherein said focus actuator is arranged to adjust the distance between optical devices row and Reference.
257. according to the lithographic equipment described in embodiment 251, comprises multiple optical devices row, and each optical devices row comprise one or more controllable concentrating element, optical projection system and focus controller.
258. according to the lithographic equipment described in embodiment 251, and wherein said focus controller is arranged to make focal height to adapt to the public picture plane of lithographic equipment.
259. according to the lithographic equipment described in embodiment 258, comprise for determine described public picture plane and pattern projection the sensor of the difference between the projection surface of substrate extremely.
260. according to the lithographic equipment described in embodiment 251, and wherein Reference is substrate.
261. according to the lithographic equipment described in embodiment 251, and wherein Reference is the reference plate being installed in on the substrate supports device of support substrates.
262. one kinds in the lithographic equipment of embodiment 251 in the method for the raw imaging plane in positive burnt position, described method comprises step:
Measure optical devices and be listed in the focusing quality on Reference;
Based on the measurement of optical devices row is adjusted to focal height; With
Be directed to the multiple described measurement of one or more other optical devices column weight and set-up procedure.
263. according to the method described in embodiment 262, is wherein directed to all optical assemblies row that are associated with the multiple parts that can rotate of lithographic equipment and carries out described method.
264. one kinds of methods for pattern generation on the substrate in the lithographic equipment of embodiment 251, described method comprises step:
Before multiple bundles being projected in multiple target parts, be directed to each optical devices and be listed as with respect to Reference and form public picture plane in positive burnt position;
Before projection process or during measure height and/or the level of incline of substrate; With
The position that during projection process, the position of substrate is generated to multiple target parts at place at pattern is adjusted to public picture plane.
265. according to the method described in embodiment 264, also comprises step: the true altitude and/or the level of incline that the focal height of optical devices row or one group of optical devices row are adjusted to the target part in the target part group of measured substrate.
266. according to the lithographic equipment described in embodiment 251, and wherein, described radiation source is self-emission formula contrast device.
267. according to the lithographic equipment described in embodiment 266, and wherein said self-emission formula contrast device is diode.
Although can make in this article concrete reference, described lithographic equipment is installed or structure (for example integrated circuit or flat-panel monitor) for the manufacture of specific, but be to be understood that lithographic equipment described here and photoetching method can have other application.Application includes but not limited to integrated circuit, integrated optics system, the guiding of magnetic domain memory and check pattern, flat-panel monitor, liquid crystal display (LCD), OLED display, thin-film head, micro electro mechanical device (MEMS), Micro-Opto-Electro-Mechanical Systems (MOEMS), DNA chip, encapsulation (for example flip-chip, distribute again etc.), (it is display or electronic installation for flexible display or electronic installation, it can be rotatable, flexible and the shape that remains unchanged as paper, conformal, rugged, thin and/or lightweight, such as flexiplast display) etc. manufacture.In addition, for example, in flat-panel monitor, equipment of the present invention and method can for example, for helping to produce various layers, tft layer and/or color filter layers.It will be understood by those skilled in the art that in the situation of this alternate application, any term " wafer " or " tube core " that wherein use can be thought respectively and more upper term " substrate " or " target part " synonym.Here the substrate of indication can be processed before or after exposure, for example, for example, in track (, a kind of instrument developing on substrate and to the resist having exposed that typically resist layer is coated onto), measuring tool or the instruments of inspection.In applicable situation, disclosure herein can be applied in this and other substrate processing instrument.In addition, more than described substrate can be processed once, for example, to produce multilayer IC, make described term used herein " substrate " also can represent to have comprised the substrate of multiple processed layers.
Term used herein " radiation " and " bundle " comprise all types of electromagnetic radiation, comprise ultraviolet (UV) radiation (for example have or approximately 365,248,193,157 or the wavelength of 126nm) and extreme ultraviolet (EUV) radiation (for example thering is the wavelength in the scope of 5-20nm) and the particle beams, such as ion beam or electron beam.
Flat-panel display substrates can be rectangular shape.The lithographic equipment that is designed for the such substrate of exposure can provide exposure area, and it covers whole width of rectangular substrate, or covers a part (half of for example width) for described width.Can below exposure area, scan substrate, the bundle synchronous scanning patterning device by patterning or patterning device provide the pattern of variation simultaneously.Like this, the pattern of expectation all or be a part ofly transferred on substrate.If exposure area covers whole width of substrate, can complete exposure with single sweep operation so.If exposure area covers the half of the width of for example substrate, so can be after the first scanning moving substrate laterally, and conventionally carry out the remainder of another substrate that scans to expose.
Expression should broadly be annotated in term used herein " patterning device " can be for the random devices of the xsect of radiation beam, such as the pattern producing in (part) substrate.It should be noted that give the pattern of radiation beam can be not exclusively corresponding to the pattern of the expectation in the target part of substrate, if for example pattern comprises phase shift feature or so-called supplemental characteristic.Similarly, the pattern finally producing on substrate may not correspond to the pattern that the arbitrary moment on the array of independent controlled member forms.This can be especially such for following layout: in described layout, the final pattern being formed in every part of substrate is being built on the given time cycle or between to the exposure period of determined number, in the given time cycle or between the exposure period of determined number, the pattern on the array of independent controlled member and/or the variation of the relative position of substrate.Conventionally, the pattern producing in the target part of substrate is the particular functional layer in the device corresponding to producing in target part, for example integrated circuit or flat-panel monitor (for example tft layer in color filter layers or the flat-panel monitor in flat-panel monitor).The example of such patterning device comprises for example mask, array of programmable mirrors, diode laser matrix, light emitting diode matrix, grating light valve and LCD array.Its pattern for example, is that programmable patterning device is collectively referred to as " contrast device " herein under the help of electronic installation (computing machine), for example comprise the patterning device of multiple programmable elements, its can each programmable element radiation beam the intensity (all devices of for example mentioning in sentence before except mask) of a part, comprise the electronic programmable patterning device with multiple programmable elements, radiation beam given by pattern by its phase place by a part for the radiation beam of assigning to respect to the adjacent portions of radiation beam.In one embodiment, patterning device comprises at least 10 programmable elements, for example at least 100, at least 1000, at least 10000, at least 100000, at least 1000000, or at least 10000000 programmable elements.The several embodiment in these devices is below discussed to a certain extent in further detail:
Array of programmable mirrors.Array of programmable mirrors can comprise matrix-addressable surface, and this matrix-addressable surface has viscoelasticity key-course and reflecting surface.The ultimate principle of such equipment institute foundation is that the addressed region of for example reflecting surface reflects the radiation of incident as diffraction radiation, and not addressed region reflects the radiation of incident as not diffracted radiation.By using suitable spatial filter, can from reflecting bundle, filter out not diffracted radiation, only leave diffraction radiation and arrive substrate.Like this, described bundle is patterned according to the addressing pattern of matrix-addressable surface.Should be appreciated that as an alternative, wave filter can filter out diffraction radiation, leaves not diffracted radiation and arrives substrate.The array of the optical MEMS device of diffraction also can use in a corresponding way.The optical MEMS device of diffraction can comprise multiple zones of reflections, and described multiple zones of reflections can relative to each other be out of shape, to form the grating of reflection incident radiation as diffraction radiation.The other embodiment of array of programmable mirrors adopts the matrix arrangements of tiny mirror, and each tiny mirror can be by applying applicable internal field or by adopting piezoelectric actuated device to tilt independently around axis.Degree of tilt has defined the state of each catoptron.In the time that element is zero defect, catoptron can be controlled by the applicable control signal of carrying out self-controller.Each flawless element is controllable, to adopt any one in a series of states, to be adjusted at the intensity of its corresponding pixel in the radiation pattern of projection.Moreover catoptron is matrix-addressable, make the radiation beam of addressed catoptron along the direction reflection incident different from not addressed catoptron; Like this, reflecting bundle can carry out patterning according to the addressing pattern of matrix-addressable catoptron.Can use applicable electronics mode to carry out needed matrix addressing.So the more information of the relevant reflection mirror array of place citation can reference example as United States Patent(USP) Nos. US 5,296,891 and US 5,523,193 and PCT Patent Application Publication Nos.WO 98/38597 and WO98/33096, by reference to their full content is incorporated herein.
Programmable LCD array.In U.S. Patent No. US 5,229,872, provide the example of such structure, by reference to its full content is incorporated herein.
Lithographic equipment can comprise one or more patterning devices, for example one or more contrast devices.For example, it can have the array of multiple independent controlled members, eachly controls independently of one another.In such layout, some or all in independent controlled member array can have public irradiation system (or part of irradiation system), at least one of the common support structure of the array of independent controlled member and/or public optical projection system (or part of optical projection system).
Be to be understood that, in the time that offset features, optical proximity correction features, phase place change technique and/or multiple-exposure technology are used in advance, for example on the array of independent controlled member, " demonstration " pattern can be different from the pattern on layer or the substrate of finally transferring to substrate substantially.Similarly, the pattern finally producing on substrate may not correspond to the pattern forming in a flash in office on the array of independent controlled member.This can be especially such to following layout: in described layout, the final pattern being formed in every part of substrate is being built on the given time cycle or on to the exposure of determined number, in the given time cycle or give pattern on the array of independent controlled member between the exposure period of determined number and/or the relative position of substrate changes.
Optical projection system and/or irradiation system can comprise various types of opticses, and the optics of for example refraction type, reflective, magnetic, electromagnetic type, electrostatic or other type, or their combination in any, to guide, to be shaped or to control radiation beam.
Described lithographic equipment can be the type for example, with two (two platforms) or more substrate tables (and/or two or more patterning device platform).In this " many " machine, can use concurrently additional platform, or in can carrying out preliminary step on one or more platform, by one or more other for exposure.
Lithographic equipment can also be that " immersion liquid " (for example water) that at least a portion substrate can be had relative high index of refraction covers to fill the type in the space between optical projection system and substrate.Immersion liquid can also be applied to other space in lithographic equipment, for example, between patterning device and optical projection system.Immersion technique is for increasing the numerical aperture of optical projection system.As the term being used herein " submergence " and do not mean that structures such as substrate and must be immersed in liquid, but mean at exposure period interstitial fluid body and be positioned between optical projection system and substrate.
In addition, equipment can be provided with fluid processing unit, for example, to allow interaction between fluid and the illuminated portion of substrate (optionally chemicals is connected to substrate or optionally revises the surface structure of substrate).
In one embodiment, substrate has circular shape, has alternatively the recess of a part and/or the edge of planarization along its circumference.In one embodiment, substrate has polygonal shape, for example rectangular shape.The embodiment that substrate has circular shape comprises such embodiment: wherein the diameter of substrate is 25mm at least, for example 50mm at least, at least 75mm, at least 100mm, at least 125mm, at least 150mm, at least 175mm, at least 200mm, at least 250mm, or 300mm at least.In one embodiment, the diameter of substrate is 500mm at the most, 400mm at the most, 350mm at the most, 300mm at the most, 250mm at the most, 200mm at the most, 150mm at the most, 100mm at the most, or 75mm at the most.Substrate is at least 1 side that the embodiment of polygon (for example rectangle) comprises substrate, for example at least 2 sides or at least 3 sides have at least 5cm, for example 25cm at least, at least 50cm, at least 100cm, at least 150cm, at least 200cm, or the embodiment of the length of 250cm at least.In one embodiment, the length that at least 1 side of substrate has is 1000cm at the most, for example 750cm at the most, 500cm at the most, 350cm at the most, 250cm at the most, 150cm at the most, or 75cm at the most.In one embodiment, substrate is that to have length be the rectangular substrate that about 250-350cm and width are about 250-300cm.The thickness of substrate can change, and can depend on for example backing material and/or substrate dimension to a certain extent.In one embodiment, thickness is at least 50 μ m, for example at least 100 μ m, at least 200 μ m, at least 300 μ m, at least 400 μ m, at least 500 μ m, or at least 600 μ m.In one embodiment, the thickness of substrate is 5000 μ m at the most, for example 3500 μ m at the most, 2500 μ m at the most, 1750 μ m at the most, 1250 μ m at the most, 1000 μ m at the most, 800 μ m at the most, 600 μ m at the most, 500 μ m at the most, 400 μ m at the most, or 300 μ m at the most.Here the substrate of indication can be processed before or after exposure, for example, in track (a kind of instrument developing on substrate and to the resist having exposed that typically resist layer is coated onto).Can before exposure or after exposure, measure the character of substrate, for example, in measuring tool and/or the instruments of inspection.
In one embodiment, resist layer is arranged on substrate.In one embodiment, substrate is wafer, for example semiconductor wafer.In one embodiment, wafer material is from by Si, SiGe, and SiGeC, SiC, Ge, GaAs, selects in the group that InP and InAs form.In one embodiment, wafer is III/V compound semiconductor wafer.In one embodiment, wafer is silicon wafer.In one embodiment, substrate is ceramic substrate.In one embodiment, substrate is glass substrate.Glass substrate may be useful, for example, in manufacture flat-panel monitor and panel of LCD.In one embodiment, substrate is plastic.In one embodiment, substrate is transparent (for people's naked eyes).In one embodiment, substrate is that tool is coloured.In one embodiment, substrate be do not have coloured.
Although patterning device 104 is as described above and/or be shown as on substrate 114 in one embodiment, it can substitute or additionally be positioned at below substrate 114.In addition, in one embodiment, patterning device 104 and substrate 114 can be side by side, and for example patterning device 104 and substrate 114 vertically extend, and pattern is by flatly projection.In one embodiment, provide at least two the relative sides of patterning device 104 with exposure substrate 114.For example, can at least on each opposite flank separately of substrate 114, there are at least two patterning devices 104, with these sides of exposing.In one embodiment, may there is single patterning device 104, for example, with a side of projection substrate 114 and applicable optical devices (restrainting directing mirror) and will project on the another side of substrate 114 from the pattern of single patterning device 104.
A kind of for the method at the raw imaging plane in positive burnt position at lithographic equipment according to one embodiment of present invention, wherein said lithographic equipment comprises: optical devices row, be configured to bundle to project in the target part of substrate, described optical devices row comprise radiation source and optical projection system, described radiation source is configured to provide bundle, described optical projection system is configured to described bundle to project in described target part, wherein said optical devices are listed as on the fixed part that is partly arranged on lithographic equipment, and be partly arranged in the part that can rotate of described lithographic equipment, wherein said optical devices row have focal position,
Scanning movement actuator, is configured to be listed as with sweep velocity moving substrate with respect to optical devices along direction of scanning; With
Focus controller, be configured to control optical devices and be listed as the focal position with respect to Reference, wherein, focus controller comprises focusing measurement mechanism and focus actuator, described focusing measurement mechanism is configured to determine the focusing quality on Reference, and described focus actuator is configured to adjust based on determined focusing quality the focal position of optical devices row;
Described method comprises step: the focusing quality of the optical devices row on witness mark object;
Based on the measurement of optical devices row is adjusted to focal position; With
Be directed to the multiple described measurement of one or more other optical devices column weight and set-up procedure.
According to other embodiment, be directed to all optical assemblies row that are associated with the multiple parts that can rotate of lithographic equipment and carry out described method.
Although below described specific embodiment of the present invention, it should be understood that the present invention can be to realize from above-mentioned different form.For example, the present invention can take the form of the computer program that comprises one or more sequence of machine-readable instruction for describing above-mentioned disclosed method, or take to have the form (for example, semiconductor memory, disk or CD) of the data storage medium of this computer program of storage therein.
In addition, although disclose the present invention under the situation of specific embodiment and example, but it will be understood by those of skill in the art that the present invention exceeds specific disclosed embodiment and extend to other alternative embodiment and/or use of the present invention and its apparent amendment and equivalent.In addition, although at length show and described many distortion of the present invention, other amendment is within the scope of the invention open based on this is that appearance is intelligible to those skilled in the art.For example, the various combinations of the special characteristic of contemplated example and aspect or sub-portfolio can be carried out and still be fallen in scope of the present invention.Therefore, should be appreciated that the various features of disclosed embodiment and aspect can be bonded to each other or substitute, be used to form the pattern of disclosed variation of the present invention.For example in one embodiment, the embodiment of the movably independent controlled member of Fig. 5 can with immovable array combination of independent controlled member, for example provide or there is standby system.
Therefore, although described various embodiment of the present invention above, should be appreciated that and only demonstrate by way of example them, and be not restrictive.Those skilled in the relevant art it should be understood that under the conditions without departing from the spirit and scope of the present invention, can carry out in form and details various variations to the present invention.Therefore, width of the present invention and scope should be by any one restrictions in above-described exemplary embodiment, but should be only limit according to claim and their equivalent.

Claims (15)

1. a lithographic equipment, comprising:
Optical devices row, be configured to bundle to project in the target part of substrate, described optical devices row comprise radiation source and optical projection system, described radiation source is configured to provide bundle, described optical projection system is configured to described bundle to project in described target part, wherein said optical projection system comprises projecting lens, field lens and imaging len, and wherein said optical devices row have focal position;
Rotatable framework, described field lens and imaging len are arranged on described rotatable framework, and described field lens and described imaging len rotate along with the rotation of described rotatable framework;
Scanning movement actuator, is configured to be listed as with sweep velocity moving substrate with respect to optical devices along direction of scanning; With
Focus controller, be configured to control optical devices and be listed as the focal position with respect to Reference, wherein, focus controller comprises focusing measurement mechanism and focus actuator, described focusing measurement mechanism is configured to determine the focusing quality on Reference, and described focus actuator is configured to adjust based on determined focusing quality the focal position of optical devices row.
2. lithographic equipment according to claim 1, wherein Reference comprises multiple marks, focus on the imageing sensor that measurement mechanism comprises the image that is arranged to receive a mark in multiple marks, wherein focus on quality and determined by the image based on projecting on imageing sensor.
3. lithographic equipment according to claim 2, wherein focuses on measurement mechanism and comprises beam splitter and quarter wave plate, is arranged to be directed to imageing sensor from the image of Reference reflection.
4. lithographic equipment according to claim 1, wherein focuses on measurement mechanism and is integrated in optical devices row.
5. lithographic equipment according to claim 1, wherein said projecting lens is used as movably concentrating element, and wherein focus actuator is connected to described concentrating element with the described focal position of mobile adjustment by described concentrating element.
6. lithographic equipment according to claim 5, wherein said focus actuator is arranged to adjust the distance between optical devices row and Reference.
7. according to the lithographic equipment described in any one in claim 1-6, comprise multiple optical devices row, each optical devices row comprise one or more controllable concentrating element, optical projection system and focus controller.
8. according to the lithographic equipment described in any one in claim 1-6, wherein said focus controller is arranged to make focal position to adapt to the public picture plane of lithographic equipment.
9. lithographic equipment according to claim 8, comprises for determining described public picture plane and the sensor of the difference between the projection surface of the substrate at pattern projection place on it.
10. lithographic equipment according to claim 1, wherein Reference is substrate.
11. lithographic equipments according to claim 1, wherein Reference is the reference plate being installed in on the substrate supports device of support substrates.
12. lithographic equipments according to claim 1, wherein, described radiation source is self-emission formula contrast device.
13. lithographic equipments according to claim 12, wherein said self-emission formula contrast device is diode.
14. 1 kinds of methods for pattern generation on the substrate in the lithographic equipment of claim 1, described method comprises step:
Before multiple bundles being projected in multiple target parts, being directed to each optical devices is listed as with respect to Reference and forms public picture plane in focal position, rotate during this period rotatable framework, make field lens and imaging len to be listed as and to be used with respect to multiple optical devices; With
The position that during projection process, the position of substrate is generated to multiple target parts at place at pattern is adjusted to public picture plane.
15. methods according to claim 14, also comprise step: the true altitude and/or the level of incline that the focal position of optical devices row or one group of optical devices row are adjusted to the target part in the target part group of measured substrate.
CN201180010292.1A 2010-02-23 2011-02-18 Lithographic apparatus and device manufacturing method Expired - Fee Related CN102763041B (en)

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011104180A1 (en) * 2010-02-23 2011-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2012076300A1 (en) * 2010-12-08 2012-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN102331687B (en) * 2011-10-21 2013-07-17 苏州大学 Step optical processing system and processing method
WO2014019846A2 (en) * 2012-07-30 2014-02-06 Asml Netherlands B.V. Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method
CN104406526B (en) * 2014-11-13 2017-02-15 浙江大学 Pulse micro displacement sensor and displacement measuring method thereof
KR102373722B1 (en) 2015-12-30 2022-03-14 에이에스엠엘 네델란즈 비.브이. Method and apparatus for direct write maskless lithography
US10527946B2 (en) 2015-12-30 2020-01-07 Asml Netherlands B.V. Method and apparatus for direct write maskless lithography
US10712669B2 (en) 2015-12-30 2020-07-14 Asml Netherlands B.V. Method and apparatus for direct write maskless lithography
US10908507B2 (en) 2016-07-13 2021-02-02 Applied Materials, Inc. Micro LED array illumination source
WO2018013270A1 (en) * 2016-07-13 2018-01-18 Applied Materials, Inc. Micro led array as illumination source
JP2019079030A (en) 2017-10-24 2019-05-23 キヤノン株式会社 Exposure equipment and manufacturing method for article
JP2019079029A (en) * 2017-10-24 2019-05-23 キヤノン株式会社 Exposure equipment and manufacturing method for article
WO2019082726A1 (en) * 2017-10-24 2019-05-02 キヤノン株式会社 Exposure device, and method for manufacturing article
US11469108B2 (en) 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
EP3708369B1 (en) * 2019-03-11 2023-03-22 DENTSPLY SIRONA Inc. Stereolithography apparatus having a detection unit for optical adjustment and image modification
CN112505713A (en) * 2020-11-27 2021-03-16 Oppo（重庆）智能科技有限公司 Distance measuring device and method, computer readable medium, and electronic apparatus
WO2024010520A1 (en) * 2022-07-08 2024-01-11 Agency For Science, Technology And Research Optical system, method of forming the same, method of direct laser writing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115437A (en) * 2001-10-03 2003-04-18 Canon Inc Aligner and exposure method
JP3550037B2 (en) * 1999-01-21 2004-08-04 シャープ株式会社 Exposure apparatus and liquid crystal display manufacturing method
EP1653280A1 (en) * 2003-08-06 2006-05-03 Sharp Kabushiki Kaisha Pattern exposing system and pattern exposing method
JP2010014796A (en) * 2008-07-01 2010-01-21 Nsk Ltd Maskless exposure apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2690498B2 (en) * 1988-04-14 1997-12-10 大日本印刷株式会社 Pattern generator
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
US5296891A (en) 1990-05-02 1994-03-22 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
DE69711929T2 (en) 1997-01-29 2002-09-05 Micronic Laser Systems Ab Taeb METHOD AND DEVICE FOR PRODUCING A PATTERN ON A SUBSTRATE COATED WITH FOTOR RESIST BY MEANS OF A FOCUSED LASER BEAM
SE509062C2 (en) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Data conversion method for a multi-beam laser printer for very complex microcolytographic designs
US20030091277A1 (en) * 2001-11-15 2003-05-15 Wenhui Mei Flattened laser scanning system
US7081947B2 (en) * 2004-02-27 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006234959A (en) * 2005-02-22 2006-09-07 Fuji Photo Film Co Ltd Exposure method and exposure apparatus
US20080316458A1 (en) * 2005-03-28 2008-12-25 Fujifilm Corporation Light Quantity Adjustment Method, Image Recording Method, and Device
JP5211487B2 (en) * 2007-01-25 2013-06-12 株式会社ニコン Exposure method, exposure apparatus, and microdevice manufacturing method
JP4885029B2 (en) * 2007-03-28 2012-02-29 株式会社オーク製作所 Exposure drawing device
JP2010014797A (en) * 2008-07-01 2010-01-21 Nsk Ltd Maskless exposure apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3550037B2 (en) * 1999-01-21 2004-08-04 シャープ株式会社 Exposure apparatus and liquid crystal display manufacturing method
JP2003115437A (en) * 2001-10-03 2003-04-18 Canon Inc Aligner and exposure method
EP1653280A1 (en) * 2003-08-06 2006-05-03 Sharp Kabushiki Kaisha Pattern exposing system and pattern exposing method
JP2010014796A (en) * 2008-07-01 2010-01-21 Nsk Ltd Maskless exposure apparatus

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