CN102756456B - Die for pre-plastic package of a lead frame and encapsulation structure - Google Patents
Die for pre-plastic package of a lead frame and encapsulation structure Download PDFInfo
- Publication number
- CN102756456B CN102756456B CN201110106847.4A CN201110106847A CN102756456B CN 102756456 B CN102756456 B CN 102756456B CN 201110106847 A CN201110106847 A CN 201110106847A CN 102756456 B CN102756456 B CN 102756456B
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- Prior art keywords
- lead frame
- plastic package
- pit
- mould
- blocking block
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- 229920003023 plastic Polymers 0.000 title claims abstract description 80
- 239000004033 plastic Substances 0.000 title claims abstract description 80
- 238000005538 encapsulation Methods 0.000 title abstract description 11
- 239000000463 material Substances 0.000 claims description 55
- 230000000903 blocking effect Effects 0.000 claims description 47
- 230000000694 effects Effects 0.000 claims description 9
- 238000007493 shaping process Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000012858 packaging process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
- G01L19/0038—Fluidic connecting means being part of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention provides a die for pre-plastic package of a lead frame and an encapsulation structure and belongs to the technical field of encapsulation of a sensor chip. The die is used for carrying out pre-plastic package on the lead frame of encapsulating the sensor chip and comprises an upper die body and a lower die body, wherein the upper die body is arranged at one side of the lead frame; the lower die frame is arranged at the second side opposite to the first side; a pit is arranged at the position corresponding to an inner pin of the lead frame on the surface of the die contacting with the first lateral surface of the lead frame, so that the lead frame extrudes towards the pit under the action of pressure in pre-plastic package, so as to form a corresponding convex baffle block. The encapsulation structure is molded by the die in pre-plastic package, and the inner pin of the lead frame is provided with the baffle block, which is formed by extruding towards the pit under the action of pressure in pre-plastic package and used as a bonding area. Therefore, the surface of the baffle block used as the bonding area is not easily polluted, and the reliability of bonding the lead is high.
Description
Technical field
The invention belongs to the encapsulation technology field of sensor chip, relate to a kind of mould for carrying out pre-plastic package to the lead frame of sensor chip and by the shaping encapsulating structure of this mould pre-plastic package.
Background technology
In IC encapsulation technology, need to select packing forms and packaging technology according to the circuit function requirements of different circuit chip.Wherein, wire bonding process and plastic packaging process is generally included in potting process.In traditional encapsulation process, be generally the chip after first wire bonding, again para-linkage and part lead frame plastic packaging, to realize the fixing of parcel mode.But for sensor chip (such as, MEMS pressure sensor chip), its potting process is different from traditional encapsulation process, first, is made in advance by plastic casing in the mode of pre-plastic package, and then carries out wire bonding.Like this, the harsh environmental effects that sensor chip suffers in plastic packaging process can be avoided.
Figure 1 shows that the encapsulating structure intention of the lead frame formation after pre-plastic package is shaping for encapsulated sensor chip.Wherein, the bottom-up orientation schematic diagram that (a) is encapsulating structure 10, the bottom that (b) is encapsulating structure 10 orientation schematic diagram down.Figure 2 shows that the cross section structure schematic diagram at the B-B place of Fig. 1 (b) after the wire bonding of encapsulating structure shown in Fig. 1.Wherein " bottom " is for the orientation of the sensor chip placed.In this embodiment, encapsulating structure 10 is PDIP (Plastic Double In-line Package, the in line encapsulation of plastics biserial) packing forms, and it is for encapsulated sensor chip 18.Shown in composition graphs 1 and Fig. 2, wherein, 11 plastic-sealed bodies formed for pre-plastic package, referred to as pre-plastic package body, 13 is the interior pin of lead frame, and 15 is the outer pin of lead frame, 17 is the island (Pad) of lead frame, 18 is packed sensor chip, and 181 spun golds formed for wire bonding, 19 is lid.Pre-plastic package body 11 is with protruding shell 111, and this protruding shell 111 is special construction requirements of sensor chip, and it is connected with the localized contact of sensor chip.The size of the relative plastic-sealed body 10 of protruding shell 111 is larger.Pin 13 in the sensor chip 18 be placed on island and lead frame, for putting sensor chip 18, in wire bonding process, can be realized type of attachment with spun gold 181 by wire bonder by the island 17 of lead frame.Owing to needing the bond area of internal pin to carry out heating to reach predetermined temperature in spun gold distribution process (being also wire bonding process).In this embodiment, below pre-plastic package body 11 corresponding to the position of interior pin has bottoming hole 113, it is for para-linkage region in wire bonding process (being usually included in pin field) heating, fixedly contacts with the good of interior pin to realize spun gold.
Pre-plastic package body 11 is normally formed by mould injection molding, such as, in the upper and lower surface of lead frame, mold and bed die are set respectively, mold and bed die clamping lead frame, fill the die cavity of two moulds during plastic packaging with resin, thus the pre-plastic package body formed on lead frame divides and pre-plastic package body under lead frame divides.
But, when adopting existing mould structure to carry out pre-plastic package, the material such as resin for the formation of pre-plastic package body is excessive to interior pin field from slit between mould (such as mold) and leadframe surfaces, the micro-structures such as the plastics overlap that naked eyes are difficult to see may be formed, its para-linkage region pollutes, and has a strong impact on the reliability of wire bonding.
In view of this, be necessary to design a kind of novel for realizing the mould of pre-plastic package process to avoid the generation of above problem.
Summary of the invention
The technical problem to be solved in the present invention is, prevents pre-plastic package process from causing the reliability decrease of wire bonding.
For solving above technical problem, according to an aspect of of the present present invention, a kind of mould is provided, for carrying out pre-plastic package to the lead frame of encapsulated sensor chip, this mould comprises upper die body and lower mold body, when carrying out pre-plastic package to lead frame, described upper die body is placed on described lead frame for placing the first side of described sensor chip, described lower mold body is placed in second side contrary with described first side, wherein, on the face that described upper die body contacts with the first side surface of described lead frame, corresponding to the position of pin in described lead frame, pit is set, corresponding protruding material blocking block is formed to make under the pressure effect of described lead frame when pre-plastic package extruding in described pit.
According to the preferred embodiment of mould provided by the invention, wherein, the degree of depth that described pit is upwards recessed is greater than the shoulder height of the projection of described material blocking block.
Preferably, the depth bounds that described pit is upwards recessed is 0.02 millimeter to 0.1 millimeter.
Preferably, the shoulder height of the projection of described material blocking block is 5% to 60% of the upwards recessed degree of depth of described pit.
Preferably, by regulating the pressure of described lead frame when pre-plastic package with the shoulder height making the upwards recessed degree of depth of described pit be greater than the projection of described material blocking block.
Preferably, described upper die body comprises upper impression bar and upper model cavity mold insert, and described pit is arranged on the face that described upper model cavity mold insert contacts with the first side surface of described lead frame.
According to the embodiment of mould provided by the invention, wherein, described lower mold body comprises lower impressions bar and counterdie die cavity mold insert.
Preferably, described pit is circular.
Preferably, the area of described material blocking block is 5% to 80% of the area of described interior pin.
According to another aspect of the present invention, a kind of encapsulating structure is provided, comprise the pre-plastic package body on lead frame and lead frame, it is characterized in that, described pre-plastic package body is by using above-described arbitrary middle mould pre-plastic package shaping, the interior pin of described lead frame is provided with the material blocking block as bond area, described material blocking block is by extruding and being formed in the pit of described mould under the pressure effect of described lead frame when pre-plastic package.
According to the preferred embodiment of mould provided by the invention, wherein, the degree of depth that described pit is upwards recessed is greater than the shoulder height of the projection of described material blocking block.
Preferably, the depth bounds that described pit is upwards recessed is 0.02 millimeter to 0.1 millimeter.
Preferably, the shoulder height of the projection of described material blocking block is 5% to 60% of the upwards recessed degree of depth of described pit.
Preferably, by regulating the pressure of described lead frame when pre-plastic package with the shoulder height making the upwards recessed degree of depth of described pit be greater than the projection of described material blocking block.
Preferably, the area of described material blocking block is 5% to 80% of the area of described interior pin.
Technique effect of the present invention is, by the upper die body at mould, pit is set corresponding on the contact surface of interior pin, thus the pressure of pre-plastic package can be utilized to make lead frame in pit, extrude the material blocking block forming projection when pre-plastic package, thus the excessive surfaces to material blocking block of material such as the resin in the die cavity of mould can be stopped by material blocking block, therefore, the surface of material blocking block can not be contaminated, and it is high as the reliability of wire bonding during bond area.
Accompanying drawing explanation
From following detailed description by reference to the accompanying drawings, above and other objects of the present invention and advantage will be made more completely clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the encapsulating structure intention of the lead frame formation after pre-plastic package is shaping for encapsulated sensor chip, wherein, and the bottom-up orientation schematic diagram that (a) is encapsulating structure 10, the bottom that (b) is encapsulating structure 10 orientation schematic diagram down.
Fig. 2 is the cross section structure schematic diagram at the B-B place of Fig. 1 (b) after the wire bonding of encapsulating structure shown in Fig. 1.
Fig. 3 is the mould structure schematic diagram of the lead frame for pre-plastic package sensor device chip provided according to one embodiment of the invention.
Fig. 4 is the structure for amplifying schematic diagram of the C part shown in Fig. 3.
Fig. 5 uses shaping rear the formed encapsulating structure schematic cross-section of mould pre-plastic package shown in Fig. 3.
Fig. 6 is the top view using shaping rear the formed encapsulating structure of mould pre-plastic package shown in Fig. 3.
Detailed description of the invention
Introduce below be of the present invention multiple may some in embodiment, aim to provide basic understanding of the present invention, be not intended to confirm key of the present invention or conclusive key element or limit claimed scope.Easy understand, according to technical scheme of the present invention, do not changing under connotation of the present invention, one of ordinary skill in the art can propose other implementation that can mutually replace.Therefore, following detailed description of the invention and accompanying drawing are only the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or the restriction be considered as technical solution of the present invention or restriction.
Herein, the directional terminology of "up" and "down" defines with the relative position between lead frame and packed sensor chip, relative to lead frame, the bearing definition put of sensor chip for " on " side, another contrary orientation is then defined as D score side.Further, be to be understood that, according to the change in the orientation that sensor chip is placed relative to lead frame, the orientation that "up" and "down" is referred to respectively also changes.
Herein, " pre-plastic package " refers to the plastic packaging process before wire bonding, and the plastic-sealed body on the lead frame formed by " pre-plastic package " is defined as " pre-plastic package body ".
The mould structure schematic diagram of the lead frame for pre-plastic package sensor device chip provided according to one embodiment of the invention is provided.Figure 4 shows that the structure for amplifying schematic diagram of the C part shown in Fig. 3.In this embodiment, after lead frame 25 prepares formation, in pre-plastic package process, the pre-plastic package body (11) shown in Fig. 1 is formed with mould 20.Just wire bonding sensor chip in the region that pre-plastic package is surrounded after pre-plastic package, thus can at the harsh environmental effects avoiding sensor chip to suffer in plastic packaging process.
Shown in composition graphs 3 and Fig. 4, mould 20 comprises upper die body 21 and lower mold body 23, and wherein upper die body is positioned at the side of the placement sensor chip of lead frame 25, and lower mold body is positioned at the opposite side of lead frame 25.Upper die body 21 comprises upper impression bar 211, upper model cavity mold insert 213; Lower mold body 23 comprises lower impressions bar 231, counterdie die cavity mold insert 233.Upper die body 21 and lower mold body 23 assembled fixing, by clamping lead frame 25 shown in Fig. 3, thus can in the die cavity of the die cavity of upper die body and drag equal resin by injection class I liquid I materials, after mould is removed in cooling further, the pre-plastic package body of predetermined shape can be formed on lead frame.The structure (not shown) of the die cavity that upper model cavity mold insert 213 is formed designs according to the shape of pre-plastic package body and the requirement of injection molding, it is not restrictive in the present invention, similarly, the structure of the die cavity formed for counterdie die cavity mold insert 233 is not restrictive equally, such as, the protruding shell 111 in pre-plastic package body 11 is also that in the die cavity by lower mold body, injection molding is formed.
Continue as shown in Figure 4, on the surface that counterdie die cavity mold insert 233 contacts with the upper surface of lead frame 25, corresponding to the position, bond area of interior pin 251, to arrange pit 214.In one example, pit 214 is processed to form by electric spark mode or machining mode, and concrete form processing does not limit by example of the present invention.Pit 214 can be column type pit, the degree of depth that the height H 1(of column type pit is also namely upwards recessed) design is in smaller scope, thus can in pre-plastic package process, by between upper die body and lower mold body, apply certain clamping pressure time, a part for the interior pin of lead frame can be squeezed in pit the material blocking block 252 being formed and raise up.Preferably, the size range of the height H 1 of column type pit is 0.02mm to 0.1mm, such as, and 0.04mm.Usually, because lead frame 25 is all formed based on metal material, when applying certain clamping pressure between upper die body and lower mold body, lead frame 25 can produce a certain amount of plastic deformation, causes the material blocking block 252 of extruding forming station scalariform in pit 214 in part metals.Owing to being that extruding is formed, the shape of material blocking block 252 and the mating shapes of pit, such as, be all toroidal, and its shoulder height is H2.Therefore, under the close contact effect of the bottom surface of the step edge of material blocking block 252 and counterdie die cavity mold insert 233 and under step barrier effect, during pre-plastic package, institute's resin by injection material is difficult to extrude from gap 253 excessive on the step surface of material blocking block 252.Therefore, material blocking block 252 has the excessive effect of barrier resin, and during using the step surface of material blocking block 252 as bond area, the reliability of wire bonding can not by the impact of the materials such as excessive resin.
Continue as shown in Figure 4, preferably, the shoulder height H2 of material blocking block 252 is less than the height H 1 of pit 214, like this, when ensureing to apply certain clamping pressure between upper die body and lower mold body, the step surface (being also wire bonding face) of material blocking block 252 does not contact with between the bottom of pit 214, also be, mutually do not extrude between the step surface of material blocking block 252 and the bottom of pit 214, thus do not destroy the reset condition of the step surface of material blocking block 252, this is conducive to the bonding between spun gold and step surface, improves the reliability of wire bonding further.Such as, if the surface of the interior pin 252 of lead frame is plating silver layer, if there is the mutual extruding of certain pressure between the bottom of the step surface of material blocking block 252 and pit 214, the hardness of silver layer can be caused to improve, this is unfavorable for the connection between spun gold and step surface.
Preferably, can by the height regulating the clamping pressure between upper die body and lower mold body to control step height H 2.Those skilled in the art can according to the height H 1 of the material of adopted lead frame material, mould, pit 214 etc. because usually selecting suitable clamping pressure, with the height H 1 making the shoulder height H2 owing to extruding the plastic deformation produced be less than pit 214.Preferably, shoulder height H2 is 5% to 60% of the height H 1 of pit 214, and such as, when H1 is 0.04mm, H2 is 0.02mm effect, now can select the clamping pressure of about 38 tons.
One skilled in the art will appreciate that the shape of pit 214 and the shape of material blocking block 252 are not restrictive, it can carry out specific design according to the shape of interior pin 251, and such as, it can also be square etc.And the area of the step surface of material blocking block 252 (substantially equaling the floor space of pit 214) can be less than or equal to the area of interior pin 251, but the size of its area must meet again the requirement of its bond area function.Preferably, the area of the step surface of material blocking block 252 is 5% to 80% of the area of interior pin.
Further, the formation of material blocking block on the pit design of the mould wherein corresponding to an interior pin place and an interior pin is only illustrated in Fig. 3, it should be noted that lead frame each in the corresponding position of pin, its mould also carries out the Curve guide impeller of same pit mode.
It should be noted that, although the structure of island in Fig. 3 be not exclusively same as the structure of the island 17 shown in Fig. 1 and Fig. 2, can be understood as lead frame in Fig. 3 is the another instantiation in the embodiment of lead frame shown in Fig. 1.The design of pit as above improves, the mould needing the sensor chip of pre-plastic package of different packing forms can be applied to, such as OCDIP6(Open Cavity Plastic Double In-line Package, the in line encapsulation of plastics biserial of beginning to speak) packing forms, be applied to medical MEMS(Micro-Electro-Mechanical System, MEMS) mould of the pre-plastic package of the encapsulation of sensor chip.
Figure 5 shows that and use shaping rear the formed encapsulating structure schematic cross-section of mould pre-plastic package shown in Fig. 3, Figure 6 shows that the top view using shaping rear the formed encapsulating structure of mould pre-plastic package shown in Fig. 3.In this embodiment, encapsulating structure 20 comprises lead frame and pre-plastic package body.Compared to encapsulating structure embodiment illustrated in fig. 2, the improvements of encapsulating structure 20 are mainly the material blocking block 252 that interior pin 251 is formed.As previously discussed, material blocking block 252 by the clamping pressure between upper die body and lower mold body cause interior pin produce plastic deformation formed.Therefore, material blocking block 252 is placed on interior pin 251 and is used as bond area.As the structure institute schematic diagram of amplifier section, the shoulder height H2 of material blocking block 252 is very little, but when this step of ingehious design can prevent pre-plastic package, the material such as resin is extruded excessive on step surface, ensure that bond area is not contaminated.
Be illustrated in the description about material blocking block 252 in figs. 3 and 4 of the concrete preferred structure example of material blocking block 252, this is no longer going to repeat them.
The encapsulating structure that above example is formed after mainly describing mould of the present invention and using this mould pre-plastic package.Although be only described some of them embodiments of the present invention, those of ordinary skill in the art should understand, and the present invention can implement with other forms many not departing from its purport and scope.Therefore, the example shown and embodiment are regarded as illustrative and not restrictive, when do not depart from as appended each claim define the present invention spirit and scope, the present invention may contain various amendments and replacement.
Claims (13)
1. a mould, for carrying out pre-plastic package to the lead frame of encapsulated sensor chip, described mould comprises upper die body and lower mold body, described upper die body is placed in the first side of described lead frame, described lower mold body is placed in second side contrary with described first side, it is characterized in that, on the face that described upper die body contacts with the first side surface of described lead frame, pit is set corresponding to the position of pin in described lead frame, forms corresponding protruding material blocking block to make under the pressure effect of described lead frame when pre-plastic package extruding in described pit; Wherein, the degree of depth that described pit is upwards recessed is greater than the shoulder height of the projection of described material blocking block.
2. mould as claimed in claim 1, is characterized in that, the upwards recessed depth bounds of described pit is 0.02 millimeter to 0.1 millimeter.
3. mould as claimed in claim 1, is characterized in that, the shoulder height of the projection of described material blocking block is 5% to 60 % of the upwards recessed degree of depth of described pit.
4. mould as claimed in claim 1, is characterized in that, by regulating the pressure of described lead frame when pre-plastic package with the shoulder height making the upwards recessed degree of depth of described pit be greater than the projection of described material blocking block.
5. mould as claimed in claim 1, it is characterized in that, described upper die body comprises upper impression bar and upper model cavity mold insert, and described pit is arranged on the face that described upper model cavity mold insert contacts with the first side surface of described lead frame.
6. mould as claimed in claim 1, it is characterized in that, described lower mold body comprises lower impressions bar and counterdie die cavity mold insert.
7. mould as claimed in claim 1, is characterized in that, described pit is circular.
8. mould as claimed in claim 1, it is characterized in that, the area of described material blocking block is 5% to 80% of the area of described interior pin.
9. an encapsulating structure, comprise the pre-plastic package body on lead frame and lead frame, it is characterized in that, described pre-plastic package body is by using mould pre-plastic package as claimed in claim 1 shaping, the interior pin of described lead frame is provided with the material blocking block as bond area, described material blocking block is by extruding and being formed in the pit of described mould under the pressure effect of described lead frame when pre-plastic package.
10. encapsulating structure as claimed in claim 9, is characterized in that, the upwards recessed depth bounds of described pit is 0.02 millimeter to 0.1 millimeter.
11. encapsulating structures as claimed in claim 9, is characterized in that, the shoulder height of the projection of described material blocking block is 5% to 60% of the upwards recessed degree of depth of described pit.
12. encapsulating structures as claimed in claim 9, is characterized in that, by regulating the pressure of described lead frame when pre-plastic package with the shoulder height making the upwards recessed degree of depth of described pit be greater than the projection of described material blocking block.
13. encapsulating structures as claimed in claim 9, is characterized in that, the area of described material blocking block is 5% to 80% of the area of described interior pin.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110106847.4A CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
| PCT/CN2011/001859 WO2012145879A1 (en) | 2011-04-27 | 2011-11-04 | Mold for pre-plastic-sealing lead frames, process for pre-plastic-sealing and packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110106847.4A CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102756456A CN102756456A (en) | 2012-10-31 |
| CN102756456B true CN102756456B (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110106847.4A Active CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102756456B (en) |
| WO (1) | WO2012145879A1 (en) |
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|---|---|---|---|---|
| CN107696422B (en) * | 2017-11-06 | 2023-10-13 | 环维电子(上海)有限公司 | Plastic packaging mold and plastic packaging method |
| CN112885743A (en) * | 2021-01-14 | 2021-06-01 | 江苏和睿半导体科技有限公司 | Plastic packaging device for chip packaging and testing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1163478A (en) * | 1996-03-07 | 1997-10-29 | 松下电子工业株式会社 | Electronic module and its producing method and its used lead wire frame and metal mould |
| JP2003053775A (en) * | 2001-08-15 | 2003-02-26 | Shinko Electric Ind Co Ltd | Resin sealing mold and method for manufacturing semiconductor device using the mold |
| CN1842911A (en) * | 2003-01-29 | 2006-10-04 | 跃进封装公司 | Package for integrated circuit lead |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799748A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal mold for resin sealing in semiconductor device |
| JPS61170038A (en) * | 1985-01-23 | 1986-07-31 | Toshiba Corp | Metal mold for resin sealing |
-
2011
- 2011-04-27 CN CN201110106847.4A patent/CN102756456B/en active Active
- 2011-11-04 WO PCT/CN2011/001859 patent/WO2012145879A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1163478A (en) * | 1996-03-07 | 1997-10-29 | 松下电子工业株式会社 | Electronic module and its producing method and its used lead wire frame and metal mould |
| JP2003053775A (en) * | 2001-08-15 | 2003-02-26 | Shinko Electric Ind Co Ltd | Resin sealing mold and method for manufacturing semiconductor device using the mold |
| CN1842911A (en) * | 2003-01-29 | 2006-10-04 | 跃进封装公司 | Package for integrated circuit lead |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102756456A (en) | 2012-10-31 |
| WO2012145879A1 (en) | 2012-11-01 |
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