CN102752962B - Substrate provided with metal layer and manufacturing method thereof - Google Patents
Substrate provided with metal layer and manufacturing method thereof Download PDFInfo
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- CN102752962B CN102752962B CN201110100813.4A CN201110100813A CN102752962B CN 102752962 B CN102752962 B CN 102752962B CN 201110100813 A CN201110100813 A CN 201110100813A CN 102752962 B CN102752962 B CN 102752962B
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- region
- ground
- bottom material
- metal
- metal level
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Abstract
The invention relates to a substrate provided with a metal layer and a manufacturing method of the substrate provided with the metal layer. The manufacturing method comprises the steps of forming a hydrophilic region or a hydrophobic region on a surface of the substrate by performing surface treatment with plasma, and attaching a catalyst layer or an exchange layer or an insulating layer formed by organic or inorganic matters on the hydrophilic or hydrophobic surface of the substrate by using a surface treatment solution; then using a metal solution to form the metal layer on the surface of the catalyst layer or the exchange layer due to catalytic reaction or exchange reaction; and the insulating layer can protect other regions from metal deposition, and the metal layer attached to the substrate can be patterned, so as to be used as a circuit junction or line. Therefore, the usage amount of metal can be saved, the manufacturing process can be simplified, and the cost of production equipment can be reduced.
Description
Technical field
The present invention is about a kind of ground of tool metal level, and relative manufacture method, is intended to simplify integral manufacturing flow process, saves metal use amount, and reduce production equipment cost.
Background technology
Well known, thinning metal level is the multiple stratification of reaching circuit board or semiconductor wafer, the filming of insulating barrier, the most direct effective method such as minor diameter, the thin space of circuit of through hole., in order to make the method for thinning metal level, is at present to utilize the method such as vacuum evaporation or sputter to form metallic film on semiconductor wafer or film of synthetic resin surface, or the method such as recycling plating form desired thickness.
Utilize evaporation or sputtering way deposition to form in the manufacturing process of metal level, it is upper outside that the metal material of institute's wish deposition can be deposited on wish plating thing, also can be deposited on the vacuum cavity inwall of evaporation or sputtering equipment, cause the unnecessary waste of target, so that the cost that entirety is manufactured improves, more severe patient, also will make vacuum cavity cleanliness factor significantly reduce, and then affect quality and the yield of the metal level of its formation that deposits.
Be with, the above-mentioned metal level of commonly using on wish plating thing still has problems and disappearance when being formed so that use by depositing by evaporation or sputtering way, and still need further necessity of improvement, be the inventor and the direction place of engaging in this journey improvement that dealer desires most ardently.
Summary of the invention
Technical problem solved by the invention is providing ground of a kind of tool metal level and preparation method thereof, the method can replace exposure and the etch process of traditional fabrication pattern metal contact or circuit, and then save metal use amount, simplification making flow process, and reduce production equipment cost.
For reaching above-mentioned purpose, the present invention mainly utilizes the surface treatment of electricity slurry to cause hydrophily or the water repellent region of surface of bottom material, and use a kind of surface processing solution to adhere at the hydrophilic or hydrophobic surface of ground catalyst layer or exchange layer or the isolation layer that one deck is formed by organic substance or inorganic matter, re-use a kind of metallic solution, make the surface of catalyst layer or exchange layer because catalyst reaction or exchange reaction form a metal level; As for; isolation layer can protect other region to avoid metal deposition; and this metal level can be patterned; supply as circuit junction or circuit; and can replace exposure and the etch process of traditional fabrication pattern metal contact or circuit; and then save metal use amount, simplification making flow process, and reduce production equipment cost.
A time object of the present invention can, on coarse ground, be produced smooth metallic contact or circuit, and has and fill out the ability of covering ground pothole, and the metal level roughness depositing is significantly reduced, and improves the identification of metal surface in successive process.
Another object of the present invention can obtain the metal level of very high purity, uses and promotes the adhesive force of successive process for metallic contact surface, ensures the yield of product.
Brief description of the drawings
Figure 1A to D is the making flow chart of first embodiment of the invention.
Fig. 2 is the ground semi-finished product structure cutaway view of second embodiment of the invention.
The making flow chart that Fig. 3 A to D is third embodiment of the invention.
The making flow chart that Fig. 4 A to F is fourth embodiment of the invention.
The making flow chart that Fig. 5 A to D is fifth embodiment of the invention.
The making flow chart that Fig. 6 A to D is sixth embodiment of the invention.
Figure number explanation:
10 grounds
10a the first base material
10b the second base material
11 hydrophobic regions
12 hydrophilic regions
13 catalyst layers
14 isolation layers
20 shieldings
30 metal levels
40 metal materials.
Embodiment
The ground of tool metal level of the present invention and manufacture method thereof, main hydrophily or the water repellent region that utilizes the surface treatment of electricity slurry to cause surface of bottom material, and use a kind of surface processing solution to adhere at the hydrophilic or hydrophobic surface of ground catalyst layer or exchange layer or the isolation layer that one deck is formed by organic substance or inorganic matter, re-use a kind of metallic solution, make the surface of catalyst layer or exchange layer because catalyst reaction or exchange reaction form a metal level.
Particularly, the ground manufacture method of tool metal level of the present invention, can mainly divide into and utilize electricity to starch in surface of bottom material to produce water repellent region, utilize electricity to starch in surface of bottom material to produce hydrophilic region, and utilize electricity to starch to produce water repellent region and three kinds of differences of hydrophilic region in surface of bottom material and apply mode; Wherein, utilize electricity to starch in the mode that applies of surface of bottom material generation water repellent region and substantially sequentially include the following step.
A. prepare a ground, this ground can be wafer or wafer (as IC, transistor, light-emitting diode, laser diode etc.) or silicon, silicon dioxide, glass, glass fibre, GaAs, sapphire, plastics, metal, PVDF, PTFE, PET, PI, PP, other macromolecule membrane or the substrate etc. of semiconductor or diode.
B. as shown in Figure 1A, the region of exposing to these ground 10 surfaces imposes the processing of electricity slurry, can on this ground 10, cover the shielding 20 of a tool predetermined pattern, and the surface exposed region of this ground 10 is imposed to the processing of electricity slurry, as shown in Figure 1B, make the surface exposed region of this ground 10 become water repellent region 11; The gas that this electricity slurry is processed can comprise CF
4, SF
6or the mixing of other single kind or its multiple gases.
C. as shown in Figure 1 C, the ground 10 this surface to water repellent region 11 is soaked in surface processing solution, can make non-other region that belongs to hydrophobic region 11 adhere to a catalyst layer 13 (or exchange layer) by surface.
D. finally will be soaked in metallic solution through the ground 10 of surface solution immersion treatment, can make the region that forms catalyst layer 13 (or exchange layer) react or exchange reaction by the catalyst of organic substance or inorganic matter, and as shown in Fig. 1 D, deposit the metal level 30 that a fineness is high and purity is high.
Certainly, be soaked in the middle of the surface treatment flow process of surface processing solution at the upper ground 10 this surface to water repellent region 11 of taking off, also can make hydrophobic region 11 adhere to an isolation layer 14 as shown in Figure 2 by surface; Relative, this isolation layer 14 can provide and block effect, avoids successive process to produce possible metal deposition in the non-plated metal region that needs.
Due to, the present invention mainly utilizes the surface treatment of electricity slurry to cause hydrophily or the water repellent region of surface of bottom material, and use a kind of surface processing solution to adhere at the hydrophilic or hydrophobic surface of ground catalyst layer or exchange layer or the isolation layer that one deck is formed by organic substance or inorganic matter, re-use a kind of metallic solution, make the surface of catalyst layer or exchange layer because catalyst reaction or exchange reaction form a metal level, therefore can target part be deposited on vacuum cavity inwall, cause unnecessary waste just like commonly using evaporation or sputtering way, the disappearances such as the raising of entirety manufacturing cost occur, simultaneously because omitting exposure and the etch process of traditional fabrication metal level, can simplify processing procedure, reduce production equipment cost.
Especially, can be on coarse ground, produce smooth metallic contact or circuit, the evaporation of commonly using or sputtering way can corresponding ground roughness produce the metal level of identical roughness, and the inventive method can have the ability of covering ground pothole of filling out, the metal level roughness depositing is significantly reduced, improve the identification of metal surface in successive process.
And, utilize method of the present invention can produce the metal level of very high purity, the evaporation of commonly using or sputtering way be the metallic cross pollution of possibility or the part consume produced pollution often, and its metal purity of the inventive method can be higher than 99.9%, effectively promote the adhesive force of successive process for circuit junction surface, ensure product yields.
Moreover the present invention utilizes electricity to starch the mode that applies that produces hydrophilic region in surface of bottom material, substantially sequentially includes the following step.
A. prepare a ground, this ground can be wafer or wafer (as IC, transistor, light-emitting diode, laser diode etc.) or silicon, silicon dioxide, glass, glass fibre, GaAs, sapphire, plastics, metal, PVDF, PTFE, PET, PI, PP, other macromolecule membrane or the substrate etc. of semiconductor or diode.
B. as shown in Figure 3A, the region of exposing to these ground 10 surfaces imposes the processing of electricity slurry, can on this ground 10, cover the shielding 20 of a tool predetermined pattern, and the surface exposed region of this ground 10 is imposed to the processing of electricity slurry, as shown in Figure 3 B, make the surface exposed region of this ground 10 become hydrophilic region 12; The gas that this electricity slurry is processed can comprise N
2, O
2, Ar, NH
3or the mixing of other single kind or its multiple gases.
The ground 10 c. this surface to hydrophilic region 12 is soaked in surface processing solution, as shown in Figure 3 C, can make hydrophilic region 12 adhere to a catalyst layer 13 (or exchange layer) by surface.
D. finally will be soaked in metallic solution through the ground 10 of surface solution immersion treatment, can make the region that forms catalyst layer 13 (or exchange layer) react or exchange reaction by the catalyst of organic substance or inorganic matter, and deposit as shown in Figure 3 D the metal level 30 that a fineness is high and purity is high.
As for, the present invention utilizes electricity to starch the mode that applies that produces hydrophobic region and hydrophilic region in surface of bottom material, substantially sequentially includes the following step:
A. prepare a ground, this ground can be wafer or wafer (as IC, transistor, light-emitting diode, laser diode etc.) or silicon, silicon dioxide, glass, glass fibre, GaAs, sapphire, plastics, metal, PVDF, PTFE, PET, PI, PP, other macromolecule membrane or the substrate etc. of semiconductor or diode.
B. as shown in Figure 4 A, the region of exposing to these ground 10 surfaces imposes electric slurry processing, can on this ground 10, cover the shielding 20 of a tool predetermined pattern, and this surface exposed region of ground 10 is imposed to the processing of electricity slurry, as shown in Figure 4 B, make this surface exposed region of ground 10 become hydrophilic region 12; The gas that this electricity slurry is processed can comprise N
2, O
2, Ar, NH
3or the mixing of other single kind or its multiple gases.
C. these ground 10 non-other regions that belong to hydrophilic region 12, surface being imposed to electricity slurry processes, can on this ground 10, cover as shown in Figure 4 C another shielding 20 with predetermined pattern in order to hydrophilic region 12 is covered, and these ground 10 surfaces are imposed to the processing of electricity slurry, as shown in Figure 4 D, make non-other region that belongs to hydrophilic region 12 of this ground 10 become water repellent region 11; The gas that this electricity slurry is processed can comprise CF
4, SF
6or the mixing of other single kind or its multiple gases.
The ground 10 d. this surface to hydrophobic region 11 and hydrophilic region 12 is soaked in surface processing solution, as shown in Figure 4 E, can make hydrophilic region 12 adhere to a catalyst layer 13 (or exchange layer) by surface, and make hydrophobic region 11 adhere to an isolation layer 14.
E. finally will be soaked in metallic solution through the ground 10 of surface solution immersion treatment, can make the region that forms catalyst layer 13 (or exchange layer) react or exchange reaction by the catalyst of organic substance or inorganic matter, and as shown in Fig. 4 F, deposit the metal level 30 that a fineness is high and purity is high; Same, the region of these ground 10 surface formation isolation layers 14, under the effect of blocking of isolation layer 14, is unlikely and produces metal deposition.
In principle, surface treatment flow process in the middle of the present invention, mainly ground is soaked in surface processing solution, make hydrophilic area or hydrophobic region can adhere to by surface catalyst layer or exchange layer or the isolation layer that one deck is formed by organic substance or inorganic matter, catalyst layer or exchange layer can provide the required effect of catalyst of follow-up metallization process or metal exchange effect, and isolation layer can provide and blocks effect and avoid successive process to produce possible metal deposition in the non-plated metal region that needs.
This step also can be heated surface processing solution to temperature between 30 ~ 80 degree Celsius, ground temperature is improved the surface energy that successive process is higher can be provided.And on hydrophilic region, can form catalyst layer or exchange layer or isolation layer, visual processing procedure need to be adjusted composition and ratio in surface processing solution, forms required material layer to reach; Hydrophobic region top mainly forms isolation layer, now in surface processing solution, mainly comprise hydrophily or hydrophobic organic or inorganic material, as interfacial agent, phosphoric acid salt, Sulfates, sulfites, benzenesulfonates, fatty acid salt, tartrates, long refining alkanes, inorganic acid, organic acid, macromolecular material, thio-alcohol, Thiourea etc., or other metal is as thallium, lead, bismuth, nickel, silver, gold, palladium, tin, lead, zinc, copper, aluminium, chromium, iron, platinum etc.Solution principal component can be water or other organic and inorganic solvent etc.
As for, metallic solution handling process in the middle of the present invention, mainly ground is immersed in a metallic solution, make catalyst layer or exchange layer top catalyst reaction or the exchange reaction deposition layer of metal by organic substance or inorganic matter, can produce one deck fineness is high and purity is high metallic contact or circuit, isolation layer top can not produce metal deposition.In this metallic solution, mainly comprise as interfacial agent, phosphoric acid salt, Sulfates, sulfites, benzenesulfonates, fatty acid salt, tartrates, long refining alkanes, inorganic acid, organic acid, macromolecular material, thio-alcohol, Thiourea etc., and other metal is as thallium, lead, bismuth, nickel, silver, gold, palladium, tin, lead, zinc, copper, aluminium, chromium, iron, platinum etc.; And after metallic contact or circuit form, catalyst layer originally or exchange layer may still exist or thickness attenuation also or not exists.
In this step, metal deposition rates 0.1 ~ 10 μ m approximately per hour, deposit thickness approximately 0.1 ~ 10 μ m; This same step also can be heated metallic solution to temperature between 30 ~ 80 degree Celsius, and the chemical energy that solution temperature is improved can provide higher is to promote deposition rate.
It is worth mentioning that, above-mentioned three kinds of differences apply that surface of bottom material that mode uses is predeterminable a metal material, taking the execution mode shown in Fig. 5 A to D as example.
Ground in the present invention can be as shown in Figure 5A, there is in advance the metal material 40 of predetermined pattern prior to surface programming, this metal material 40 can be single-layer metal material or the composite bed metal materials such as nickel, silver, gold, palladium, tin, lead, zinc, copper, aluminium, iron, platinum, titanium, germanium, gallium, Yin, Arsenic, and alternative imposes the processing of electricity slurry to the non-surface exposed region that belongs to metal material 40 of this ground 10, as shown in Figure 5 B, make this surface exposed region of ground 10 become hydrophobic region 11 (or hydrophilic region), also visual processing procedure needs simultaneously, adjust composition and ratio in surface processing solution, as shown in Figure 5 C, make catalyst layer 13 (or exchange layer) only be formed at this metal material 40 tops, hydrophobic region 11 (or hydrophilic region) top forms isolation layer 14 (or not forming in addition isolation layer), react or exchange reaction by the catalyst of organic substance or inorganic matter finally by making the region that forms catalyst layer 13 (or exchange layer) after metallic solution immersion treatment, and deposit as shown in Figure 5 D the metal level 30 that a fineness is high and purity is high, in addition, virgin metal material 40 also may provide being attached on metal material 40 that direct or indirect catalyst or exchange effect make that metal level 30 more can be good.
In this embodiment, there is metal material 40 this catalyst layer 13 (or exchange layer) below, and its appended metal level 30 materials that are added on metal material 40 tops can be identical or different with the metal material of below 40; Therefore, utilize ground 10 structures of method made of the present invention, be attached with purity in surface and reach 99.9% metal level; Or, be provided with tool predetermined pattern metal material in surface, and on this metal material, be attached with purity and reach 99.9% metal level, and this metal material layer can be patterned, for the circuit junction as special-purpose or circuit.
Moreover, in the various embodiments described above, this ground 10 can also be composite material, as shown in Figure 6A, this ground 10 is by two kinds of differences first, the second base material 10a, 10b is composited, the surface treatment of recycling electricity slurry causes hydrophily or the water repellent region of surface of bottom material, in embodiment as shown in Figure 6B, in the upper hydrophilic area 12 that forms of this first base material 10a, and the catalyst layer 13 (or exchange layer) that uses a kind of surface processing solution to be formed by organic substance or inorganic matter at the hydrophilic area of the first base material 10a 12 surface attachment one decks, as shown in Figure 6 C, re-use a kind of metallic solution, make the surface of catalyst layer 13 (or exchange layer) because catalyst reaction or exchange reaction form a metal level 30, as shown in Figure 6 D.
Claims (6)
1. a ground manufacture method for tool metal level, is characterized in that, includes the following step:
A. prepare a ground;
B. the region of exposing of this surface of bottom material is imposed to the processing of electricity slurry, make the region that this surface of bottom material exposes become water repellent region, wherein this ground is provided with metal material prior to surface in advance or on this ground, covers the shielding of a tool predetermined pattern, then the region that this surface of bottom material is exposed imposes electricity slurry and processes;
The ground c. this surface to water repellent region is soaked in surface processing solution, can make non-other region that belongs to hydrophobic region adhere to a catalyst layer by surface;
D. finally by being soaked in metallic solution through the ground of surface solution immersion treatment, make to form area deposition one metal level of catalyst layer.
2. a ground manufacture method for tool metal level, is characterized in that, includes the following step:
A. prepare a ground;
B. the region of exposing of this surface of bottom material is imposed to the processing of electricity slurry, make the region that this surface of bottom material exposes become hydrophilic region, wherein this ground is provided with metal material prior to surface in advance or on this ground, covers the shielding of a tool predetermined pattern, then the region that this surface of bottom material is exposed imposes electricity slurry and processes;
The ground c. this surface to hydrophilic region is soaked in surface processing solution, can make hydrophilic region adhere to a catalyst layer by surface;
D. finally by being soaked in metallic solution through the ground of surface solution immersion treatment, make to form area deposition one metal level of catalyst layer.
3. a ground manufacture method for tool metal level, is characterized in that, includes the following step:
A. prepare a ground;
B. the region of exposing of this surface of bottom material is imposed to the processing of electricity slurry, make the region that this surface of bottom material exposes become hydrophilic region, wherein this ground is provided with metal material prior to surface in advance or on this ground, covers the shielding of a tool predetermined pattern, then the region that this surface of bottom material is exposed imposes electricity slurry and processes;
C. non-other region that belongs to hydrophilic region of this surface of bottom material is imposed to electricity slurry and process, make non-other region that belongs to hydrophilic region of this ground become water repellent region;
The ground d. this surface to hydrophobic region and hydrophilic region is soaked in surface processing solution, makes hydrophilic region adhere to a catalyst layer, and makes hydrophobic region adhere to an isolation layer;
E. finally by being soaked in metallic solution through the ground of surface solution immersion treatment, make to form area deposition one metal level of catalyst layer.
4. the ground manufacture method of tool metal level as described in claim 1 or 3, is characterized in that, uses and comprises CF
4, SF
6or the mixing of other single kind or its multiple gases, the region that this surface of bottom material is exposed imposes electricity slurry and processes, and makes the region that this surface of bottom material exposes become hydrophobic region.
5. the ground manufacture method of tool metal level as described in claim 2 or 3, is characterized in that, uses and comprises N
2, O
2, Ar, NH
3or the mixing of other single kind or its multiple gases, the region that this surface of bottom material is exposed imposes electricity slurry and processes, and makes the region that this surface of bottom material exposes become hydrophilic region.
6. have as claimed in claim 1 a ground manufacture method of metal level, it is characterized in that, the ground this surface to water repellent region is soaked in the middle of the surface treatment flow process of surface processing solution, makes this hydrophobic region adhere to an isolation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110100813.4A CN102752962B (en) | 2011-04-21 | 2011-04-21 | Substrate provided with metal layer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110100813.4A CN102752962B (en) | 2011-04-21 | 2011-04-21 | Substrate provided with metal layer and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102752962A CN102752962A (en) | 2012-10-24 |
| CN102752962B true CN102752962B (en) | 2014-11-05 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015110088A1 (en) | 2014-01-27 | 2015-07-30 | Byd Company Limited | Method for metalizing polymer substrate and polymer article prepared thereof |
| CN110752296B (en) * | 2019-11-22 | 2022-02-25 | 中国科学院化学研究所 | Method for preparing top contact source and drain electrodes in OFET (organic field effect transistor) by solution method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121327A1 (en) * | 2003-12-04 | 2005-06-09 | Giin-Shan Chen | Electroless-plated deposit process for silicon based dielectric insulating material |
| CN1949954A (en) * | 2005-10-12 | 2007-04-18 | 中华映管股份有限公司 | Method for making metal wire |
| CN101798683A (en) * | 2009-02-11 | 2010-08-11 | 财团法人工业技术研究院 | Nano metal solution, nano metal composite particles and metal film manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468597A (en) * | 1993-08-25 | 1995-11-21 | Shipley Company, L.L.C. | Selective metallization process |
| JP2000147792A (en) * | 1998-11-13 | 2000-05-26 | Toyota Central Res & Dev Lab Inc | Pattern forming method |
| US20090056994A1 (en) * | 2007-08-31 | 2009-03-05 | Kuhr Werner G | Methods of Treating a Surface to Promote Metal Plating and Devices Formed |
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2011
- 2011-04-21 CN CN201110100813.4A patent/CN102752962B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121327A1 (en) * | 2003-12-04 | 2005-06-09 | Giin-Shan Chen | Electroless-plated deposit process for silicon based dielectric insulating material |
| CN1949954A (en) * | 2005-10-12 | 2007-04-18 | 中华映管股份有限公司 | Method for making metal wire |
| CN101798683A (en) * | 2009-02-11 | 2010-08-11 | 财团法人工业技术研究院 | Nano metal solution, nano metal composite particles and metal film manufacturing method |
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