CN102751707A - Overcurrent and overvoltage protector with bimetallic strip temperature switch - Google Patents

Overcurrent and overvoltage protector with bimetallic strip temperature switch Download PDF

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Publication number
CN102751707A
CN102751707A CN2012102435723A CN201210243572A CN102751707A CN 102751707 A CN102751707 A CN 102751707A CN 2012102435723 A CN2012102435723 A CN 2012102435723A CN 201210243572 A CN201210243572 A CN 201210243572A CN 102751707 A CN102751707 A CN 102751707A
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China
Prior art keywords
temperature switch
ptc thermistor
chip
bimetal leaf
leaf temperature
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CN2012102435723A
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Chinese (zh)
Inventor
沈朝阳
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SHENZHEN JINYANG ELECTRONIC CO Ltd
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SHENZHEN JINYANG ELECTRONIC CO Ltd
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Priority to CN2012102435723A priority Critical patent/CN102751707A/en
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Abstract

The invention relates to an overcurrent and overvoltage protector with a bimetallic strip temperature switch. The protector comprises a PTC (positive temperature coefficient) thermistor chip (1), a piezoresistor chip (2) and the bimetallic strip temperature switch (3), wherein one side electrode of the PTC thermistor chip (1) is connected with one side electrode of the piezoresistor chip (2) through soldering tin to form a common terminal which is led out by a first lead foot (6); a metal shell of the bimetallic strip temperature switch (3) is connected with the other side electrode of the PTC thermistor chip (1) through the soldering tin; a first leading-out terminal (4) of the bimetallic strip temperature switch (3) is connected with the other side electrode of the PTC thermistor chip (1); a second leading-out terminal of the bimetallic strip temperature switch (3) is led out by a second lead foot (5); and the other side electrode of the piezoresistor chip (2) is led out by a third lead foot (7). According to the overcurrent and overvoltage protector with the bimetallic strip temperature switch, a post-stage circuit is protected, and the functions of automatic power off and automatic power on are realized.

Description

A kind of over-current overvoltage protector with the bimetal leaf temperature switch
 
Technical field
The present invention relates to the over-current overvoltage protector structure, relate in particular to a kind of over-voltage and over-current protector spare that in the protection of non-linear power, can cut off the power supply automatically and power on automatically.
 
Background technology
PTC thermistor and piezo-resistance generally have following three kinds of modes in the Combination application of non-linear power, like Fig. 1, Fig. 2, (in the accompanying drawing, PTCR representes the PTC thermistor, and RV representes piezo-resistance) shown in Figure 3:
In the circuit as shown in Figure 1; Piezo-resistance is because its excellent nonlinear characteristic is applied to absorb in the multiple electronic circuit lightning induction pulse transient overvoltage etc.; But, various abnormal causes lost efficacy even blast on fire because often causing varistor; Designers are in order to address this problem the pressure sensitive voltage value and the diameter of the raising piezo-resistance of having to often consider, the protection range that has reduced piezo-resistance has like this improved use cost.Have only the non-linear power start moment surge inhibitory action to be arranged at PTC thermistor as shown in Figure 1; And break down in non-linear power inside or during output load generation great change, resistance value just can rise and be getting in touch of high-impedance state deenergization and electrical network greatly and avoid accident to enlarge.
In the circuit as shown in Figure 2, the PTC thermistor is except taking into account as the described function of Fig. 1, and when the circuit abnormal overvoltage, this thermistor also can flow through because of the big electric current of piezo-resistance transient response, because of W=I 2RT makes the rising of PTC thermistor resistance be high-impedance state.Owing to there is not the heat coupling between PTC thermistor and the piezo-resistance; The PTC thermistor is slow partially to the protection speed of piezo-resistance; Dare not reduce the pressure sensitive voltage of piezo-resistance and strengthen protection non-linear power; And abnormal overvoltage can cause back level load outage because of voltage all is added in its two ends after making the protection of PTC thermistor, and might not be that fault has taken place non-linear power this moment.
In the circuit as shown in Figure 3; PTC thermistor and piezo-resistance are combined into compound PTC thermistor; Because the PTC thermistor can utilize the temperature of piezo-resistance when response thermal coupling to accelerate the protection speed of PTC thermistor, the pressure sensitive voltage of piezo-resistance has had and has declined to a great extent in this compound PTC thermistor, helps the protection to late-class circuit more; As shown in Figure 3; After protection was accomplished, the PTC thermistor caused back level load outage because can not withdraw from guard mode automatically, and might not be that fault has taken place non-linear power this moment.Be unfavorable for the industry control occasion and the unattended site environment of power-off restoration automatically especially.
 
Summary of the invention
The objective of the invention is to propose a kind of over-current overvoltage protector with the bimetal leaf temperature switch, it can solve existing compound PTC thermistor can not be applied to the industry control occasion of automatic power-off restoration and the problem of unattended site environment.
In order to achieve the above object, the technical scheme that the present invention adopted is following:
A kind of over-current overvoltage protector with the bimetal leaf temperature switch, it comprises PTC thermistor chip, voltage dependent resistor chip and bimetal leaf temperature switch; An electrode of PTC thermistor chip and an electrode of voltage dependent resistor chip link together through scolding tin, form common port, draw through first pin; The another side electrode of the metal shell of bimetal leaf temperature switch and PTC thermistor chip links together through scolding tin; First exit of bimetal leaf temperature switch is connected with the another side electrode of PTC thermistor chip; Second exit of bimetal leaf temperature switch is drawn through second pin; The another side electrode of voltage dependent resistor chip is drawn through the 3rd pin.
As preferred construction, PTC thermistor chip, voltage dependent resistor chip and bimetal leaf temperature switch all are encapsulated in the encapsulated layer, and said encapsulated layer is the phenolic resins encapsulated layer.Because the different trip point that the temperature switch of band bimetal leaf mainly is made up of the sheet metal of two kinds of different coefficients of expansion; When making its long period be in the condition of high temperature, can have influence on its accuracy; And the curing temperature of phenolic resins is between 125-145 ℃; More approaching or during when this curing temperature more less than the saltus step temperature of bimetal leaf temperature switch, more little to the trip point influence of bimetal leaf temperature switch, so the present invention has adopted the lower phenolic resins of curing temperature.
As preferred construction, the Curie temperature of PTC thermistor chip is 95-135 ℃.Because the high ambient temperature scope that electric equipment products are used generally is to be less than or equal to 80 ℃; And the PTC thermistor generally requires the Curie temperature of PTC thermistor more than 15 ℃, so just to be unlikely to make the thermistor misoperation greater than high ambient temperature when making excess temperature or overcurrent protection.In addition; Its surface balance temperature of PTC thermistor protection back generally can surpass Curie temperature more than 25 ℃; And can soften by the PTC thermistor welding when surface temperature surpasses 160 ℃ that is welded to connect; Influence welding spot reliability, so the Curie temperature of PTC thermistor chip is preferably 95-135 ℃.
As preferred construction, the saltus step temperature of bimetal leaf temperature switch is 90-125 ℃.When the Curie temperature scope of PTC thermistor is 95-135 ℃; Selection saltus step temperature is the action that 90-125 ℃ bimetal leaf temperature switch can guarantee fast speed; After the protector outage; Temperature will be reduced to lower temperature range and just drop into startup again, has avoided the impulse current of repeated priming moment to make protector drop into guard mode again.Therefore the saltus step temperature of bimetal leaf temperature switch is preferably 90-125 ℃.
As preferred construction, the pressure sensitive voltage scope of voltage dependent resistor chip is direct current 360-460V.When the pressure sensitive voltage of voltage dependent resistor chip designs in direct current 360-460V scope; Be added in residual voltage in the late-class circuit in the overvoltage absorption process and fall the residual voltage that will be significantly less than the independent discrete piezo-resistance of using and fall (pressure sensitive voltage of the discrete piezo-resistance of using will be designed into direct current 560V ± 10% at least separately), help the protection of late-class circuit more.
The present invention has following beneficial effect:
PTC thermistor chip and voltage dependent resistor chip are combined into compound PTC thermistor, the PTC thermistor chip since thermal coupling voltage dependent resistor chip, temperature in the response process and electric current have been accelerated protection speed.Voltage dependent resistor chip is owing to there has been the quickening of the protection speed of PTC thermistor chip; Can reduce pressure sensitive voltage to a greater extent and strengthen overvoltage protection scope late-class circuit; Temperature transfer after the PTC thermistor chip will be protected is simultaneously given the bimetal leaf temperature switch, and deenergization after the tripping of bimetal leaf temperature switch is after the protector temperature reduces; The rebound of bimetal leaf temperature switch is connected circuit and is supplied power to late-class circuit, thus the purpose that reaches automatic outage and power on automatically.
 
Description of drawings
Fig. 1 is PTC thermistor and the piezo-resistance of prior art Combination application circuit one sketch map at non-linear power;
Fig. 2 is PTC thermistor and the piezo-resistance of prior art Combination application circuit two sketch mapes at non-linear power;
Fig. 3 is PTC thermistor and the piezo-resistance of prior art Combination application circuit three sketch mapes at non-linear power;
Fig. 4 is the structural representation of the over-current overvoltage protector of the band bimetal leaf temperature switch of preferred embodiment of the present invention;
Fig. 5 is applied to the equivalent electric circuit in the non-linear power circuit for the over-current overvoltage protector of the band bimetal leaf temperature switch of preferred embodiment of the present invention.
 
Embodiment
Below, in conjunction with accompanying drawing and embodiment, the present invention done further describing, so that clearerly understand the present invention's technological thought required for protection.
As shown in Figure 4, a kind of over-current overvoltage protector with the bimetal leaf temperature switch, it comprises PTC thermistor chip 1, voltage dependent resistor chip 2 and bimetal leaf temperature switch 3.Need to prove that the described PTC thermistor chip of present embodiment, voltage dependent resistor chip are represented not encapsulated naked wafers, piezo-resistance encapsulated naked wafers not of PTC thermistor respectively.Wherein, the saltus step temperature of bimetal leaf temperature switch 3 is 90-125 ℃, and the Curie temperature of PTC thermistor chip 1 is 95-135 ℃, and the pressure sensitive voltage scope of voltage dependent resistor chip 2 is direct current 360-460V.
An electrode of PTC thermistor chip 1 and an electrode of voltage dependent resistor chip 2 link together through scolding tin, form common port, draw through first pin 6.The another side electrode of the metal shell of bimetal leaf temperature switch 3 and PTC thermistor chip 1 links together through scolding tin.The effect of above-mentioned two place's scolding tin all is to be electrically connected and to transmit heat.
First exit 4 of bimetal leaf temperature switch 3 is connected with the another side electrode of PTC thermistor chip 1, and promptly first exit 4 extracts and is connected to from the metal shell of double metal temperature switch 3 on the another side electrode of PTC thermistor chip 1.
Second exit of bimetal leaf temperature switch 3 is drawn through second pin 5, forms independent pin; The another side electrode of voltage dependent resistor chip 2 is drawn through the 3rd pin 7, also forms an independent pin.
PTC thermistor chip 1, voltage dependent resistor chip 2 and bimetal leaf temperature switch 3 all are encapsulated in the encapsulated layer, and said encapsulated layer is the phenolic resins encapsulated layer.
In conjunction with Fig. 4 and Fig. 5; Wherein, as shown in Figure 5, frame of broken lines is the equivalent circuit structure (call in the following text protection device) of over-current overvoltage protector of the band bimetal leaf temperature switch of present embodiment; In the accompanying drawing 5; S representes bimetal leaf temperature switch 3, and PTCR representes PTC thermistor chip 1, and RV representes voltage dependent resistor chip 2.When adding overvoltage, the transient current that flows through voltage dependent resistor chip 2 flow through earlier the bimetal leaf temperature switch 3 and the PTC thermistor chip of flowing through, the electric current of the PTC thermistor chip 1 of wherein flowing through forms heat by the W=I2Rt produce power and gathers.The transient current of voltage dependent resistor chip 2 of flowing through makes voltage dependent resistor chip 2 produce temperature rises, and the scolding tin of this temperature rise between PTC thermistor chip 1 and voltage dependent resistor chip 2 also is coupled to PTC thermistor chip 1, makes PTC thermistor chip 1 also produce temperature rise.The heat that PTC thermistor chip 1 produces also is coupled to being close to the bimetal leaf temperature switch 3 that PTC thermistor chip 1 another side is extremely gone up.Served as voltage time more in short-term; Superpotential energy makes the whole temperature rise deficiency of the whole protecting device generation that is packaged together so that bimetal leaf temperature switch 3 trippings outage; This moment, entire circuit was in proper working order; Served as voltage time when longer, the energy that overvoltage produces makes the whole protecting device temperature rise to 140-150 ℃, at this moment reaches the saltus step temperature of bimetal leaf temperature switch 3.Bimetal leaf temperature switch 3 trippings outage, owing to there is not electric current to continue to flow through PTC thermistor chip 1, PTC thermistor chip 1 no longer produces heat.The protection device passes through the surrounding air distribute heat, when protection device bulk temperature is hanged down the rebound temperature that arrives bimetal leaf temperature switch 3, and bimetal leaf temperature switch 3 closures, non-linear power recovers late-class circuit and supplies power.
Gather because the electric current in the voltage dependent resistor chip 2 overvoltage response processes can make PTC thermistor chip 1 produce heat by W=I2Rt, and the generation heat also can be coupled to PTC thermistor chip 1 in the voltage dependent resistor chip 2 overvoltage absorption processes ,The protection of PTC thermistor chip 1 speeds up; The speed of bearing dividing potential drop is faster; Help protection more to voltage dependent resistor chip 2; When the pressure sensitive voltage of voltage dependent resistor chip 2 designs in the 360-460VDC scope; Residual voltage after being added in the overvoltage absorption process in the polar circuit is fallen the residual voltage that will be significantly less than the independent discrete piezo-resistance of using and is fallen (pressure sensitive voltage of the piezo-resistance of discrete use will be designed into direct current 560V ± 10% at least separately), thereby helps the protection of late-class circuit more.The whole temperature rise that when the overvoltage of long period, makes the protection device is during greater than the saltus step temperature of bimetal leaf temperature switch 3; Bimetal leaf temperature switch 3 trippings outage; After the bulk temperature of protection device descended, the bimetal leaf temperature was opened 3 pass closures and is supplied power to late-class circuit.
Can know that by foregoing description the innovation part of present embodiment is: when circuit occurs unusually, produce overvoltage or operation surge, late-class circuit is protected, late-class circuit is cut off the power supply automatically through the protection device.At this moment, the reason of protection device protection is not that late-class circuit has occurred unusual and protection that cause, but because after overvoltage made voltage dependent resistor chip 2 responses, the coupling of heat and transient current made PTC thermistor chip 1 present the guard mode of high resistant.Therefore can break off this guard mode in the short period of time and automatic recovery of power supply just seems necessary.
For a person skilled in the art, can make other various corresponding changes and distortion, and these all changes and distortion should belong within the protection range of claim of the present invention all according to the technical scheme and the design of above description.

Claims (5)

1. the over-current overvoltage protector with the bimetal leaf temperature switch is characterized in that, comprises PTC thermistor chip (1), voltage dependent resistor chip (2) and bimetal leaf temperature switch (3); An electrode of PTC thermistor chip (1) and an electrode of voltage dependent resistor chip (2) link together through scolding tin, form common port, draw through first pin (6); The another side electrode of the metal shell of bimetal leaf temperature switch (3) and PTC thermistor chip (1) links together through scolding tin; First exit (4) of bimetal leaf temperature switch (3) is connected with the another side electrode of PTC thermistor chip (1); Second exit of bimetal leaf temperature switch (3) is drawn through second pin (5); The another side electrode of voltage dependent resistor chip (2) is drawn through the 3rd pin (7).
2. the over-current overvoltage protector of band bimetal leaf temperature switch as claimed in claim 1; It is characterized in that; PTC thermistor chip (1), voltage dependent resistor chip (2) and bimetal leaf temperature switch (3) all are encapsulated in the encapsulated layer, and said encapsulated layer is the phenolic resins encapsulated layer.
3. the over-current overvoltage protector of band bimetal leaf temperature switch as claimed in claim 1 is characterized in that, the saltus step temperature of bimetal leaf temperature switch (3) is 90-125 ℃.
4. the over-current overvoltage protector of band bimetal leaf temperature switch as claimed in claim 1 is characterized in that, the Curie temperature of PTC thermistor chip (1) is 95-135 ℃.
5. the over-current overvoltage protector of band bimetal leaf temperature switch as claimed in claim 1 is characterized in that, the pressure sensitive voltage scope of voltage dependent resistor chip (2) is direct current 360-460V.
CN2012102435723A 2012-07-13 2012-07-13 Overcurrent and overvoltage protector with bimetallic strip temperature switch Pending CN102751707A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105186476A (en) * 2015-09-24 2015-12-23 湖南劲阳电子有限公司 Overvoltage and overcurrent protection circuit
CN110962605A (en) * 2018-09-28 2020-04-07 株式会社斯巴鲁 Junction box control device
CN112355560A (en) * 2020-10-27 2021-02-12 王哲涵 Welding sealing clamping device for shock absorber
CN112863794A (en) * 2021-03-24 2021-05-28 上海维安电子有限公司 Temperature-sensitive PTC protector
CN113572128A (en) * 2021-08-11 2021-10-29 上海维安电子有限公司 Over-temperature and over-current integrated protection element
CN114360826A (en) * 2021-12-03 2022-04-15 平高东芝(廊坊)避雷器有限公司 Direct mould pressing type composite outer sleeve lightning arrester and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2567845Y (en) * 2002-09-11 2003-08-20 深圳市鹏科兴实业有限公司 Overcurrent overvoltage protector
CN201036096Y (en) * 2007-03-19 2008-03-12 深圳市劲阳电子有限公司 Composite type positive temperature coefficient thermal resistance
CN102545144A (en) * 2011-11-16 2012-07-04 溧阳杰敏电子有限公司 Temperature switch type overvoltage protection device
CN202663099U (en) * 2012-07-13 2013-01-09 深圳市劲阳电子有限公司 Over-current and over-voltage protector with bimetallic-strip temperature switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2567845Y (en) * 2002-09-11 2003-08-20 深圳市鹏科兴实业有限公司 Overcurrent overvoltage protector
CN201036096Y (en) * 2007-03-19 2008-03-12 深圳市劲阳电子有限公司 Composite type positive temperature coefficient thermal resistance
CN102545144A (en) * 2011-11-16 2012-07-04 溧阳杰敏电子有限公司 Temperature switch type overvoltage protection device
CN202663099U (en) * 2012-07-13 2013-01-09 深圳市劲阳电子有限公司 Over-current and over-voltage protector with bimetallic-strip temperature switch

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105186476A (en) * 2015-09-24 2015-12-23 湖南劲阳电子有限公司 Overvoltage and overcurrent protection circuit
CN105186476B (en) * 2015-09-24 2019-04-16 湖南劲阳电子有限公司 A kind of over-voltage over-current protection circuit
CN110962605A (en) * 2018-09-28 2020-04-07 株式会社斯巴鲁 Junction box control device
CN110962605B (en) * 2018-09-28 2024-05-10 株式会社斯巴鲁 Junction box control device
CN112355560A (en) * 2020-10-27 2021-02-12 王哲涵 Welding sealing clamping device for shock absorber
CN112355560B (en) * 2020-10-27 2023-12-15 温州江硕车业股份有限公司 Welding seal clamping device for shock absorber
CN112863794A (en) * 2021-03-24 2021-05-28 上海维安电子有限公司 Temperature-sensitive PTC protector
CN113572128A (en) * 2021-08-11 2021-10-29 上海维安电子有限公司 Over-temperature and over-current integrated protection element
CN114360826A (en) * 2021-12-03 2022-04-15 平高东芝(廊坊)避雷器有限公司 Direct mould pressing type composite outer sleeve lightning arrester and manufacturing method thereof

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Application publication date: 20121024