CN102751442B - Organnic electroluminescent device and preparation method thereof - Google Patents
Organnic electroluminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN102751442B CN102751442B CN201110098198.8A CN201110098198A CN102751442B CN 102751442 B CN102751442 B CN 102751442B CN 201110098198 A CN201110098198 A CN 201110098198A CN 102751442 B CN102751442 B CN 102751442B
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- film
- electroluminescent device
- oxygen barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a kind of Organnic electroluminescent device, comprise the substrate layer, anode layer, luminescent layer and the cathode layer that stack gradually, in addition, this Organnic electroluminescent device also comprises the first water oxygen barrier layer for preventing hydrone or oxygen from infiltrating be located between substrate layer and anode layer, and is located at the levelling blanket for leveling first water oxygen barrier layer between the first water oxygen barrier layer and anode layer.This Organnic electroluminescent device, by arranging the first water oxygen barrier layer and levelling blanket between substrate layer and anode layer, effectively can prevent hydrone and oxygen access to plant inside, thus effectively can improve stability and the useful life of Organnic electroluminescent device.In addition, the invention still further relates to a kind of manufacture method of Organnic electroluminescent device.
Description
[technical field]
The present invention relates to electroluminescent device and make field, particularly relate to a kind of Organnic electroluminescent device and preparation method thereof.
[background technology]
Organic electroluminescent (OrganicLightEmissionDiode is called for short OLED) has the characteristics such as brightness is high, material selection range is wide, driving voltage is low, all solidstate active illuminating; Have high definition, wide viewing angle simultaneously, and the advantage such as fast response time, and OLED has splendid pliability, can folded bent, a kind of flexible display technologies and light source of great potential, meet the development trend of information age mobile communication and information displaying, and the requirement of green lighting technique, be the focal point of current lot of domestic and foreign researcher.
But in the OLED of traditional fabrication, great majority use glass to cook substrate, then at substrate surface attachment transparent conductive film if tin indium oxide etc. is as transparency electrode.But use the OLED of glass substrate not possess bending feature, and Glass breadks easily, impact is caused on the application of OLED.Thin polymer film such as PETG is adopted to replace glass as base material, OLED can be made to obtain good bendability, but use these polymer thin-film materials also to there are some shortcomings, the air-tightness of such as thin polymer film is often poor, hydrone and oxygen molecule can be caused to penetrate into device inside, have a strong impact on life-span and the stability of device.
[summary of the invention]
Based on this, be necessary to provide one can inner, the good Organnic electroluminescent device of stability of effectively anti-sealing oxygen access to plant.
A kind of Organnic electroluminescent device, comprise the substrate layer stacked gradually, anode layer, luminescent layer and cathode layer, in addition, this Organnic electroluminescent device also comprises the first water oxygen barrier layer for preventing hydrone or oxygen from infiltrating be located between substrate layer and anode layer, and the levelling blanket for leveling first water oxygen barrier layer be located between the first water oxygen barrier layer and anode layer, wherein, substrate layer is formed by thin polymer film, first water oxygen barrier layer is formed by the first aluminium film, levelling blanket is by ultra-violet curing glue, epoxy resin, acryl resin or polyimides are formed.
Preferably, the thickness of the first water oxygen barrier layer is 20 ~ 500nm; The thickness of levelling blanket is 20 ~ 100nm.
Preferably, anode layer is formed by the second aluminium film of thickness between 20 ~ 200nm.
Preferably, the anode layer di-aluminium trioxide film that comprises the second aluminium film and be deposited on the second aluminium film.
Preferably, the second water oxygen barrier layer be located on cathode layer is also comprised.
Preferably, the second water oxygen barrier layer is the SiO film of thickness between 80 ~ 200nm.
Preferably, the material that thin polymer film uses is polyimides, PETG, polyether sulfone, PEN, cyclic olefine copolymer, Merlon, polyphenylene sulfide, polyethylene or polypropylene.
This Organnic electroluminescent device, also comprises at least one in hole injection layer and hole transmission layer further between anode layer and luminescent layer; At least one in hole blocking layer, electron transfer layer and electron injecting layer is also comprised further between luminescent layer and cathode layer.
Above-mentioned Organnic electroluminescent device by arranging the first water oxygen barrier layer and levelling blanket between substrate layer and anode layer, effectively can prevent hydrone and oxygen access to plant inside, thus effectively can improve stability and the useful life of Organnic electroluminescent device, this levelling blanket can the surface of leveling first water oxygen barrier layer, reduce rete defect, avoiding device produces the phenomenon of short circuit, in addition, this levelling blanket can also improve the binding ability between anode layer and substrate layer, thus improves the stability of Organnic electroluminescent device under flexure using state.
Meanwhile, by forming di-aluminium trioxide film on aluminium anodes layer surface, di-aluminium trioxide film and aluminium anodes layer form Al/Al jointly
2o
3composite anode structure, thus can anode work function be improved, reduce hole injection barrier, improve the injection efficiency of charge carrier.
This Organnic electroluminescent device uses cheap aluminium as anode material, and substrate layer made by polymeric material, and manufacturing process is simple, cost is low, long service life, and flexural property is good, stable luminescent property, can be widely used at flexible light and field of flexible display.
In addition, there is a need to provide a kind of and can enter the manufacture method of device inside, the good Organnic electroluminescent device of stability by effectively anti-sealing oxygen.
A manufacture method for Organnic electroluminescent device, comprises the steps:
Step one, by thin polymer film formed substrate layer clean up rear drying for standby;
Step 2, on substrate layer deposition of aluminum, form the first water oxygen barrier layer;
Step 3, on the first water oxygen barrier layer, apply one deck for smooth viscose, form levelling blanket after solidification process, wherein, viscose is ultra-violet curing glue, epoxy resin, acryl resin or polyimides;
Deposition anode layer, luminescent layer and cathode layer successively on step 4, levelling blanket after solidification process.
Preferably, the thickness of the first water oxygen barrier layer is 20 ~ 500nm; The thickness of levelling blanket is 20 ~ 100nm; Anode layer is formed by the second aluminium film of thickness between 20 ~ 200nm.
Preferably, also comprise after anode layer deposition terminates in step 4 and under ozone environment, be oxidized 10 ~ 120 seconds to form the step of di-aluminium trioxide film by forming the second aluminium film of anode layer;
Further, be also included on cathode layer and deposit the step that the SiO film of a layer thickness between 80 ~ 200nm forms the second water oxygen barrier layer after cathode layer deposition terminates in step 4.
Above-mentioned manufacture method principle is simple, low for equipment requirements, can wide popularization and application.
[accompanying drawing explanation]
Fig. 1 is the film layer structure schematic diagram of the Organnic electroluminescent device of a preferred implementation;
Fig. 2 luminous intensity of Organnic electroluminescent device that to be comparative example 4 make with embodiment 1 and the graph of relation of voltage;
Fig. 3 luminous intensity of Organnic electroluminescent device that to be comparative example 5 make with embodiment 1 and the graph of relation of time.
[embodiment]
Mainly in conjunction with the drawings and the specific embodiments Organnic electroluminescent device and preparation method thereof is described in further detail below.
As shown in Figure 1, the Organnic electroluminescent device 100 of a preferred implementation comprises substrate layer 101, the first water oxygen barrier layer 102, levelling blanket 103, anode layer 104, hole injection layer 105, hole transmission layer 106, luminescent layer 107, electron transfer layer 108, electron injecting layer 109 and the cathode layer 110 that stack gradually.
In addition, in other embodiments, Organnic electroluminescent device can also only include the substrate layer, anode layer, luminescent layer and the cathode layer that stack gradually.
Substrate layer 101 is the film of polymeric material.Launch or top emitting device for both-end, substrate layer 101 can be transparent or transparent materials.Preferably, polymeric material can adopt polyimides, PETG, polyether sulfone, PEN, cyclic olefine copolymer, Merlon, polyphenylene sulfide, polyethylene or polypropylene etc.Adopt polymeric material substrate layer 101 can improve the flexural property of Organnic electroluminescent device 100.
First water oxygen barrier layer 102 of present embodiment is formed by the first aluminium film of thickness range between 20 ~ 500nm.First aluminium film can adopt the method preparations such as vacuum evaporation, direct current sputtering, magnetron sputtering, radio frequency sputtering or molecular beam epitaxial growth.First water oxygen barrier layer 102 effectively can improve the water oxygen barrier performance of substrate layer 101, prevents hydrone and oxygen molecule from entering in Organnic electroluminescent device 100, thus can improve stability and the useful life of Organnic electroluminescent device 100.
Because the surface roughness of the first aluminium film is comparatively large, the Organnic electroluminescent device 100 of present embodiment is provided with the levelling blanket 103 for leveling first aluminium film further on the first aluminium film.Levelling blanket 103 can adopt the material preparations such as ultra-violet curing glue, epoxy resin, acryl resin or polyimides.Levelling blanket 103 can the surface of leveling first aluminium film, reduces rete defect, avoids Organnic electroluminescent device 100 to produce the phenomenon of short circuit, thus improve the stability of device.Meanwhile, levelling blanket 103 can also improve the binding ability between anode layer 104 and substrate layer 101, thus improves Organnic electroluminescent device 100 stability in the deflected state further.
Anode layer 104 is formed by the second aluminium film of the thickness be deposited on levelling blanket 103 between 20 ~ 200nm.Second aluminium film can adopt the method preparations such as vacuum evaporation, direct current sputtering, magnetron sputtering, radio frequency sputtering, pulsed laser deposition or molecular beam epitaxial growth, from the viewpoint of technique or cost, preferably, adopts the method preparation of vacuum evaporation.
In other embodiments, anode layer 104 comprises the second aluminium film and is deposited on the di-aluminium trioxide film on described second aluminium film.Alundum (Al2O3) rete forms Al/Al together with the second aluminum membranous layer
2o
3composite anode structure.This composite anode structure can improve anode work function, reduces hole injection barrier, improves the injection efficiency of charge carrier.
Hole injection layer 105, hole transmission layer 106, luminescent layer 107, electron transfer layer 108 and electron injecting layer 109 can adopt this area the material commonly used make.The cathode layer 110 of present embodiment adopts translucent cathode material to make.At least one in the optional free aluminium of cathode material, gold, silver, calcium, magnesium, magnadure or magnesium silver alloy, preferably, can the layered cathode done of aluminium and silvery, comprise aluminium lamination and silver layer, wherein aluminum layer thickness is 0.5nm, and silver thickness is 20nm.
In addition, the Organnic electroluminescent device 100 of the present embodiment deposits the second water oxygen barrier layer (not shown) further on cathode layer 110 surface.Preferably, the second water oxygen barrier layer is formed by the SiO film of thickness between 80 ~ 200nm.
Organnic electroluminescent device 100 uses cheap aluminium as anode layer 104, and substrate layer 101 made by polymeric material, and manufacturing process is simple, cost is low, long service life, and flexural property is good, stable luminescent property, can be widely used at flexible light and field of flexible display.
The manufacturing process of above-mentioned Organnic electroluminescent device 100, comprises the steps:
Step S1: by the substrate layer 101 of polymeric material successively with the cleaning of deionized water, acetone and isopropyl alcohol equal solvent, clean up rear drying for standby.
Step S2: adopt method evaporation one deck first water oxygen barrier layers 102 on substrate layer 101 such as vacuum evaporation.
First water oxygen barrier layer 102 of present embodiment is formed by the first aluminium film of thickness within the scope of 20 ~ 500nm.
Step S3: adopt the methods such as spin coating to apply one deck ultra-violet curing glue, epoxy resin, acryl resin or polyimides on the first water oxygen barrier layer 102, forms the levelling blanket 103 of thickness between 20 ~ 100nm after solidification process.
Step S4: adopt method evaporation one deck anode layers 104 on levelling blanket 103 such as vacuum evaporation.
The anode layer 104 of present embodiment is second aluminum membranous layer of thickness within the scope of 20 ~ 200nm.
Step S5: adopt the method such as vacuum evaporation, evaporation hole injection layer 105, hole transmission layer 106, luminescent layer 107, electron transfer layer 108, electron injecting layer 109 and cathode layer 110 successively on anode layer 104.
In addition, in order to reach good packaging effect, after the complete cathode layer 110 of evaporation, continuation is the SiO film of 80 ~ 200nm in the surperficial evaporation a layer thickness of cathode layer 110, as the second water oxygen barrier layer of cathode portion, then use transparent polymer film as cover plate, adopt ultra-violet curing glue to encapsulate Organnic electroluminescent device.
This manufacture method principle is simple, low for equipment requirements, can wide popularization and application.
In addition, in other embodiments, when anode layer is Al/Al
2o
3composite anode structure time, after evaporation terminates the second aluminium film, the second aluminium film to be placed under ozone environment oxidation 10 ~ 120 seconds, to form di-aluminium trioxide film at the second aluminium film surface, and then form Al/Al
2o
3composite anode structure.Adopt composite anode structure to improve anode work function, reduce hole injection barrier, improve the injection efficiency of charge carrier.
Be below specific embodiment and comparative example part.
Embodiment 1
After PET (PETG) film is dried up with cleaning agent, washed with de-ionized water, nitrogen successively, be 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 50nm at film surface evaporation thickness; Be that the ultra-violet curing glue of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 80nm, and the second aluminium film is oxidized 30s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be 20nmAg layer and thickness be 100nm; Then adopt PET film as cover plate, with UV glue, device is encapsulated.
Embodiment 2
PEN (PEN) film is used cleaning agent, washed with de-ionized water successively, after nitrogen dries up, is 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 20nm at its surperficial evaporation thickness; Be that the acryl resin of 100nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 20nm, and the second aluminium film is oxidized 10s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer CuPc of 40nm successively, thickness is the hole transmission layer TCTA of 20nm, thickness is the luminescent layer DPVBi of 10nm, thickness is the electron transfer layer Bphen of 40nm, thickness is the electron injecting layer LiF of 1nm, thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be the Ag of 20nm and thickness be 100nm; Then adopt PEN film as cover plate, with UV glue, device is encapsulated.
Embodiment 3
PI (polyimides) film is used cleaning agent, washed with de-ionized water successively, after nitrogen dries up, is 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 500nm at its surperficial evaporation thickness, be that the polyimides of 20nm is as levelling blanket in first aluminium film surface spin coating a layer thickness, at the second aluminium film that levelling blanket surface evaporation a layer thickness is 100nm, and this second aluminium film is oxidized 120s in ozonation system obtains alundum (Al2O3) thin layer, subsequently at spin coating one deck PEDOT:PSS (40nm) above as hole injection layer, then evaporation thickness is the hole transmission layer MeO-TPD of 50nm successively, thickness is the luminescent layer CBP:DCM2 of 20nm, thickness is the electron transfer layer TPBi of 40nm, thickness is the electron injecting layer Liq of 1nm, thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be the Ag of 20nm and thickness be 100nm, then adopt PI film as cover plate, with UV glue, device is encapsulated.
Embodiment 4
After PES (polyether sulfone) film is dried up with cleaning agent, washed with de-ionized water, nitrogen successively, be 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 100nm at film surface evaporation thickness; Be that the epoxy resin of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 200nm, and the second aluminium film is oxidized 50s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be 20nmAg layer and thickness be 80nm; Then adopt PES film as cover plate, with UV glue, device is encapsulated.
Embodiment 5
After PC (Merlon) film is dried up with cleaning agent, washed with de-ionized water, nitrogen successively, be 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 100nm at film surface evaporation thickness; Be that the ultra-violet curing glue of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 200nm, and the second aluminium film is oxidized 50s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be 20nmAg layer and thickness be 80nm; Then adopt PC film as cover plate, with UV glue, device is encapsulated.
Embodiment 6
After PP (polypropylene) film is dried up with cleaning agent, washed with de-ionized water, nitrogen successively, be 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 100nm at film surface evaporation thickness; Be that the ultra-violet curing glue of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 200nm, and the second aluminium film is oxidized 50s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be 20nmAg layer and thickness be 80nm; Then adopt PP film as cover plate, with UV glue, device is encapsulated.
Embodiment 7
After COC (cyclic olefine copolymer) film is dried up with cleaning agent, washed with de-ionized water, nitrogen successively, be 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 100nm at film surface evaporation thickness; Be that the ultra-violet curing glue of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 200nm, and the second aluminium film is oxidized 50s in ozonation system obtains alundum (Al2O3) thin layer, then above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 0.5nm, the water oxygen barrier layers SiO of thickness to be 20nmAg layer and thickness be 80nm; Then adopt COC film as cover plate, with UV glue, device is encapsulated.
Comparative example 1
PET film being used cleaning agent successively, washed with de-ionized water, after nitrogen dries up, is 5 × 10 in vacuum degree
-4in the coating system of Pa, be the first aluminium film of 50nm at its surperficial evaporation thickness; Be that the ultra-violet curing glue of 50nm is as levelling blanket in first aluminium film surface spin coating a layer thickness; At the second aluminium film that levelling blanket surface evaporation a layer thickness is 80nm, then on the second aluminium film, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, and thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF (1nm) of 1nm, and thickness is the negative electrode Al of 0.5nm, and the water oxygen barrier layers SiO of thickness to be the Ag of 20nm and thickness be 100nm, then adopts PET film as cover plate, encapsulated by device with UV glue.
This comparative example 1 and embodiment 1 compare difference and are only that the Organnic electroluminescent device that comparative example 1 makes does not include di-aluminium trioxide film, after tested the Organnic electroluminescent device prepared of comparative example 1 and embodiment 1 luminous intensity and voltage curve as shown in Figure 2.Learnt by Fig. 2, when anode layer surface coverage has Al
2o
3after, due to Al
2o
3can hole injection barrier be reduced, therefore can see and be inserted with Al
2o
3the carrier injection ability of light-emitting device be better than without Al
2o
3light-emitting device.
Comparative example 2
PET film is used cleaning agent successively, washed with de-ionized water, after nitrogen dries up, adopting magnetic control sputtering system, is the ito thin film of 100nm in its surface sputtering a layer thickness, then 5 × 10
-4in the coating system of Pa, above, evaporation thickness is the hole injection layer m-MTDATA of 30nm successively, and thickness is the hole transmission layer NPB of 60nm, and thickness is the luminescent layer C545T:Alq of 20nm
3, thickness is the electron transfer layer Alq of 40nm
3, thickness is the electron injecting layer LiF of 1nm, and thickness is the negative electrode Al of 100nm, and thickness is the water oxygen barrier layers SiO of 100nm; Then adopt PET film as cover plate, with UV glue, device is encapsulated.
This comparative example 2 compares with embodiment 1, and difference is only that the Organnic electroluminescent device that comparative example 2 makes does not include the first aluminium film, and adopts sputtering ITO film as anode layer.The brightness after repeatedly bending of Organnic electroluminescent device that comparative example 2 is prepared with embodiment 1 after tested changes more as shown in table 1, and luminous intensity and time curve are as shown in Figure 3.
Table 1
The result of table 1 shows, in embodiment 1, the binding ability of the first aluminium film and substrate layer is better, and in the process of alternating bending, anode layer can not come off from substrate layer, therefore, it is possible to keep the stability of Organnic electroluminescent device luminescence.
As shown in Figure 3, when adopting the polymeric material of covering first aluminium film as substrate layer, the useful life of Organnic electroluminescent device is obviously better than independent PET-ITO substrate, and this is because the first aluminium film has good water oxygen barriering effect, can improve the useful life of Organnic electroluminescent device.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (7)
1. an Organnic electroluminescent device, comprise the substrate layer stacked gradually, anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and cathode layer, it is characterized in that, described Organnic electroluminescent device also comprises the first water oxygen barrier layer for preventing hydrone or oxygen from infiltrating be located between described substrate layer and described anode layer, be located at the levelling blanket for the first water oxygen barrier layer described in leveling between described first water oxygen barrier layer and described anode layer, be located at the second water oxygen barrier layer on described cathode layer, and described Organnic electroluminescent device is carried out to the transparent polymer film cover plate of encapsulation, wherein, described substrate layer is formed by thin polymer film, described first water oxygen barrier layer is formed by the first aluminium film, described levelling blanket is selected from ultra-violet curing glue, epoxy resin, one in acryl resin or polyimides is formed, described anode layer comprises the second aluminium film and is located at the di-aluminium trioxide film on described second aluminium film, and described cathode layer comprises aluminium lamination and is located at the silver layer on described aluminium lamination.
2. Organnic electroluminescent device as claimed in claim 1, it is characterized in that, the thickness of described first water oxygen barrier layer is 20 ~ 500nm; The thickness of described levelling blanket is 20 ~ 100nm.
3. Organnic electroluminescent device as claimed in claim 1, it is characterized in that, described second water oxygen barrier layer is the SiO film of thickness between 80 ~ 200nm.
4. Organnic electroluminescent device as claimed in claim 1, it is characterized in that, the material that described thin polymer film uses is polyimides, PETG, polyether sulfone, PEN, cyclic olefine copolymer, Merlon, polyphenylene sulfide, polyethylene or polypropylene.
5. a manufacture method for Organnic electroluminescent device, is characterized in that, comprises the steps:
Step one, by thin polymer film formed substrate layer clean up rear drying for standby;
Step 2, on described substrate layer deposition of aluminum, form the first water oxygen barrier layer;
Step 3, on described first water oxygen barrier layer, apply one deck for smooth viscose, form levelling blanket after solidification process, wherein, viscose is ultra-violet curing glue, epoxy resin, acryl resin or polyimides;
Deposition anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and cathode layer successively on step 4, described levelling blanket after solidification process;
Step 5, after having deposited cathode layer, has continued, at cathode layer surface deposition one deck second water oxygen barrier layer, then to use transparent polymer film as cover plate, encapsulate Organnic electroluminescent device;
In described step 4, depositing described anode layer is deposition of aluminum film on described levelling blanket, and the aluminium film of deposition is oxidized 10 ~ 120 seconds under ozone environment at surface formation di-aluminium trioxide film, to obtain the anode layer of aluminium film and di-aluminium trioxide film compound;
In described step 4, deposit described cathode layer and to be included on electron injecting layer deposited aluminum layer and depositing silver layers on described aluminium lamination.
6. the manufacture method of Organnic electroluminescent device as claimed in claim 5, it is characterized in that, the thickness of described first water oxygen barrier layer is 20 ~ 500nm; The thickness of described levelling blanket is 20 ~ 100nm.
7. the manufacture method of Organnic electroluminescent device as claimed in claim 6, it is characterized in that, the described second water oxygen barrier layer of deposition is the SiO film of thickness between 80 ~ 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110098198.8A CN102751442B (en) | 2011-04-19 | 2011-04-19 | Organnic electroluminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110098198.8A CN102751442B (en) | 2011-04-19 | 2011-04-19 | Organnic electroluminescent device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102751442A CN102751442A (en) | 2012-10-24 |
| CN102751442B true CN102751442B (en) | 2016-04-13 |
Family
ID=47031455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110098198.8A Active CN102751442B (en) | 2011-04-19 | 2011-04-19 | Organnic electroluminescent device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102751442B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904241B (en) * | 2012-12-25 | 2016-04-13 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method |
| CN103904251B (en) * | 2012-12-25 | 2016-04-13 | 海洋王照明科技股份有限公司 | A kind of organic electroluminescence device and preparation method |
| CN104157705B (en) * | 2014-08-05 | 2017-08-04 | 京东方科技集团股份有限公司 | A kind of preparation method for obstructing film layer, the photoelectric device for having it and photoelectric device |
| CN111816786A (en) * | 2020-05-29 | 2020-10-23 | 苏州星烁纳米科技有限公司 | Light-emitting panel, preparation method thereof and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1418042A (en) * | 2002-11-25 | 2003-05-14 | 清华大学 | Package layer for organic electroluminescent device and its prepn method and application |
| CN101510587A (en) * | 2009-04-03 | 2009-08-19 | 清华大学 | Flexible passive organic electroluminescent device and method for preparing the same |
| CN101866944A (en) * | 2010-02-26 | 2010-10-20 | 信利半导体有限公司 | Organic light-emitting diode display |
| CN101894919A (en) * | 2009-05-21 | 2010-11-24 | 三星移动显示器株式会社 | The method of organic light emitting apparatus and this organic light emitting apparatus of manufacturing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079512A (en) * | 2002-06-17 | 2004-03-11 | Sanyo Electric Co Ltd | Organic el panel and its manufacturing method |
-
2011
- 2011-04-19 CN CN201110098198.8A patent/CN102751442B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1418042A (en) * | 2002-11-25 | 2003-05-14 | 清华大学 | Package layer for organic electroluminescent device and its prepn method and application |
| CN101510587A (en) * | 2009-04-03 | 2009-08-19 | 清华大学 | Flexible passive organic electroluminescent device and method for preparing the same |
| CN101894919A (en) * | 2009-05-21 | 2010-11-24 | 三星移动显示器株式会社 | The method of organic light emitting apparatus and this organic light emitting apparatus of manufacturing |
| CN101866944A (en) * | 2010-02-26 | 2010-10-20 | 信利半导体有限公司 | Organic light-emitting diode display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102751442A (en) | 2012-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130306956A1 (en) | Flexible organic electroluminescent device and manufacturing method thereof | |
| CN103137881B (en) | Organnic electroluminescent device and preparation method thereof | |
| US20140077202A1 (en) | Top-emitting organic light-emitting device and method for preparing the same | |
| US20140124768A1 (en) | Top-emitting flexible organic light emission diode device and preparation method thereof | |
| CN102751442B (en) | Organnic electroluminescent device and preparation method thereof | |
| CN103050635B (en) | A kind of top emission organic electroluminescence diode and preparation method thereof | |
| CN103137876B (en) | Organnic electroluminescent device and preparation method thereof | |
| CN102790183B (en) | Flexible organic light-emitting diode and manufacturing method thereof | |
| CN103594653A (en) | Top-emitting organic electroluminescent device and preparation method thereof | |
| CN102751440B (en) | Flexible organic electroluminescent device and preparation method thereof | |
| CN103050636B (en) | Top emission organic electroluminescence diode and preparation method thereof | |
| EP2833428A1 (en) | Organic electroluminescence device and method for manufacture thereof | |
| CN104979491A (en) | Organic light emission diode and preparation method therefor | |
| CN103137882A (en) | Organic electroluminescent device and production method thereof | |
| CN104218156A (en) | Organic light emission diode device and preparation method thereof | |
| CN104183718A (en) | Organic light emission diode and preparation method thereof | |
| CN103594649A (en) | Organic electroluminescent device and preparation method thereof | |
| CN102891261B (en) | electroluminescent device and preparation method thereof | |
| CN103137880B (en) | Organic electroluminescence device and preparation method thereof | |
| CN103594650A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104183767A (en) | Organic light emitting diode and preparation method thereof | |
| CN104078590A (en) | Organic light-emitting diode and preparation method thereof | |
| CN103594647A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103928631A (en) | Organic electroluminescence apparatus and preparation method thereof | |
| CN103427040A (en) | Organic electroluminescent device and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |