CN102751368A - InGaN/Si双结太阳能电池 - Google Patents
InGaN/Si双结太阳能电池 Download PDFInfo
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- CN102751368A CN102751368A CN2012102468055A CN201210246805A CN102751368A CN 102751368 A CN102751368 A CN 102751368A CN 2012102468055 A CN2012102468055 A CN 2012102468055A CN 201210246805 A CN201210246805 A CN 201210246805A CN 102751368 A CN102751368 A CN 102751368A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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CN201210246805.5A CN102751368B (zh) | 2012-07-17 | 2012-07-17 | InGaN/Si双结太阳能电池 |
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CN201210246805.5A CN102751368B (zh) | 2012-07-17 | 2012-07-17 | InGaN/Si双结太阳能电池 |
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CN102751368A true CN102751368A (zh) | 2012-10-24 |
CN102751368B CN102751368B (zh) | 2015-01-14 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103928539A (zh) * | 2013-01-11 | 2014-07-16 | 国际商业机器公司 | 多结iii-v太阳能电池及其制造方法 |
CN104347753A (zh) * | 2013-08-01 | 2015-02-11 | 中国电子科技集团公司第十八研究所 | InGaN/Si三结太阳能电池的制备方法 |
CN113594028A (zh) * | 2021-07-27 | 2021-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓p型掺杂的方法、GaN基PN结的制作方法及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20050102298A (ko) * | 2004-04-21 | 2005-10-26 | 한국전기연구원 | 광감응형 및 p-n접합 복합구조를 갖는 태양전지 및 그제조방법 |
CN101866967A (zh) * | 2010-04-30 | 2010-10-20 | 华中科技大学 | 太阳能电池 |
CN102290478A (zh) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | 一种p-i-n型单结InGaN太阳能电池 |
CN102403377A (zh) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | N型衬底硅太阳能电池及其生产方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20050102298A (ko) * | 2004-04-21 | 2005-10-26 | 한국전기연구원 | 광감응형 및 p-n접합 복합구조를 갖는 태양전지 및 그제조방법 |
CN101866967A (zh) * | 2010-04-30 | 2010-10-20 | 华中科技大学 | 太阳能电池 |
CN102290478A (zh) * | 2011-09-05 | 2011-12-21 | 中国电子科技集团公司第十八研究所 | 一种p-i-n型单结InGaN太阳能电池 |
CN102403377A (zh) * | 2011-11-01 | 2012-04-04 | 宁波市鑫友光伏有限公司 | N型衬底硅太阳能电池及其生产方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103928539A (zh) * | 2013-01-11 | 2014-07-16 | 国际商业机器公司 | 多结iii-v太阳能电池及其制造方法 |
CN104347753A (zh) * | 2013-08-01 | 2015-02-11 | 中国电子科技集团公司第十八研究所 | InGaN/Si三结太阳能电池的制备方法 |
CN113594028A (zh) * | 2021-07-27 | 2021-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓p型掺杂的方法、GaN基PN结的制作方法及其应用 |
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CN102751368B (zh) | 2015-01-14 |
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Effective date of registration: 20190529 Address after: 300384 Tianjin Binhai New Area Huayuan Industrial Zone (Outside Rim) No. 6 Solar Cell and Controller Workshop, Haitai Huake 7th Road, Second Floor Co-patentee after: The 18th Research Institute of China Electronics Technology Group Corporation Patentee after: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. Co-patentee after: China Electric Power Shenzhen Group Co.,Ltd. Address before: 300384 No. 15, Sidao, Haitai Development, Huayuan Industrial Park, Xiqing District, Tianjin Co-patentee before: The 18th Research Institute of China Electronics Technology Group Corporation Patentee before: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. |
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Address after: 300384 Tianjin Binhai New Area Huayuan Industrial Zone (Outside Rim) No. 6 Solar Cell and Controller Workshop, Haitai Huake 7th Road, Second Floor Patentee after: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. Patentee after: The 18th Research Institute of China Electronics Technology Group Corporation Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area Huayuan Industrial Zone (Outside Rim) No. 6 Solar Cell and Controller Workshop, Haitai Huake 7th Road, Second Floor Patentee before: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation Patentee before: CETC Energy Co.,Ltd. Address after: 300384 Tianjin Binhai New Area Huayuan Industrial Zone (Outside Rim) No. 6 Solar Cell and Controller Workshop, Haitai Huake 7th Road, Second Floor Patentee after: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. Patentee after: The 18th Research Institute of China Electronics Technology Group Corporation Patentee after: CETC Energy Co.,Ltd. Address before: 300384 Tianjin Binhai New Area Huayuan Industrial Zone (Outside Rim) No. 6 Solar Cell and Controller Workshop, Haitai Huake 7th Road, Second Floor Patentee before: TIANJIN LANTIAN SOLAR TECH Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation Patentee before: China Electric Power Shenzhen Group Co.,Ltd. |
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