CN102744024A - Low temperature plasma grafting vaporization method and apparatus - Google Patents

Low temperature plasma grafting vaporization method and apparatus Download PDF

Info

Publication number
CN102744024A
CN102744024A CN2011101017148A CN201110101714A CN102744024A CN 102744024 A CN102744024 A CN 102744024A CN 2011101017148 A CN2011101017148 A CN 2011101017148A CN 201110101714 A CN201110101714 A CN 201110101714A CN 102744024 A CN102744024 A CN 102744024A
Authority
CN
China
Prior art keywords
low temperature
storage tank
temperature plasma
grafting
vaporization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101017148A
Other languages
Chinese (zh)
Inventor
王红卫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Original Assignee
SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU OPS PLASMA TECHNOLOGY Co Ltd filed Critical SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Priority to CN2011101017148A priority Critical patent/CN102744024A/en
Publication of CN102744024A publication Critical patent/CN102744024A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention provides a low temperature plasma grafting vaporization method and its apparatus, the apparatus comprises a material storing can, a heating device, a temperature control apparatus, a cleaning device and a flow regulator. The material storing can is composed of a material storing chamber, a top cover and a sealing ring, the material storing chamber is connected to a top cover by a screw, a feed inlet, a gas outlet and a temperature control probe installation port are provided on the top cover, the feed inlet, the gas outlet and the temperature control probe installing port are connected to the top cover by sealing with an O-shaped sealing ring, The heating device comprises the heating of the material storing can and a conveying pipeline. The invention has the advantages of simple operation, easy vaporization amount control, difficult condensation and easy cleaning, and provides convenience for usage, and the raw material scope is wide.

Description

A kind of low temperature plasma grafting gasification method and device
Technical field
The present invention relates to a kind of method of grafting vaporization, particularly a kind of being used for also quantitatively is transported to reaction chamber with the liquid charging stock vaporization, with the matching used low temperature plasma grafting vaporization of low temperature plasma surface treatment appearance appearance.
Background technology
The material surface modifying treatment technology is one of material preparation technology of generally using at present; Its basic principle is under certain external condition; Material exterior materials and material surface generation physics or chemical reaction; From but the material surface state changes or at new element of material surface production and new group, finally satisfy the needs of practical application.Realize that at present the method that material surface is handled is generally the liquid phase reactor method, because the liquid phase reactor method exists energy consumption big, environment is had the shortcoming of pollution, the method for being badly in need of a kind of energy-conserving and environment-protective substitutes.
The low temperature plasma surface treatment is meant: under negative pressure (vacuum), apply high-frequency electric field for the reacting gas environment, gas ionization under the excitation of high-frequency electric field produces plasma.Plasma is the 4th attitude of material; Wherein contain various active particles such as a large amount of electronics, ion and free radical; Active particle and material surface generation physics and chemical reaction, thus structure, composition and the group of material surface are changed, be met the surface of actual instructions for use.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, to the not influence of performance of material internal bulk material, is desirable surface modification means.
Encourage the temperature of the plasma that produces to approach room temperature at the negative pressure state high-frequency electric field, therefore claim low temperature plasma again.Because its operating temperature is low, so can handle all material that comprises plastics.
In order to reach desired material surface performance, often need use the polymerization of plasma initiation grafting in the Low Temperature Plasma Treating process, and that the raw material of graft reaction is a monomer is liquid often.Because low-temperature plasma modified process carries out under negative pressure, it is raw materials used must to be fed into reaction chamber with the mode of gaseous state.In order to enlarge the application of surface modification of low temperature plasma surface modification, how need to solve liquid charging stock vaporization and the method and apparatus that can quantitatively carry.
Someone adopts the method for flask sealing and heating that liquid charging stock is converted into steam; And then the flow through shutoff valve control gas; Though this method is simple, exist evaporating capacity should not control, be prone to shortcomings such as condensation, inconvenience cleaning, bring certain trouble to use.Handle employed raw material range, the expansion low-temperature plasma
Summary of the invention
In order to overcome the deficiency that prior art exists, provide a kind of can be with an amount of vaporization of liquid charging stock and the low temperature plasma grafting vaporization that can quantitatively carry appearance.
To achieve these goals, the present invention adopts following technical scheme:
A kind of low temperature plasma grafting gasification method and device; Comprise storage tank, heater, attemperating unit, cleaning device and flow regulator; Described storage tank is made up of storage cavity, loam cake and sealing ring; Connect with screw between storage cavity and the loam cake; On covered charge door, gas outlet and temperature probe installing port, through " O " shape sealing ring sealing, described heater comprises the heating of storage tank and the heating of conveyance conduit between charge door, gas outlet and temperature probe installing port and the loam cake.
As preferred version of the present invention, the heater of said storage tank is annular heating jacket, is sheathed on the outer wall of storage tank, and the heater of said conveyance conduit is the heating tape, is wound in the conveyance conduit outer wall.
As preferred version of the present invention, said low temperature plasma grafting vaporization appearance comprises the heat tracing control of storage tank and the heat tracing control of vaporization back gas transmission pipeline.
As preferred version of the present invention, said cleaning device is made up of pipeline and magnetic valve, and described flow regulator is accomplished by flowmeter.
Compared with prior art, the present invention has following distinguishing feature:
1, loading chamber adopts removable structure, is convenient to clean and change different raw materials;
Only charge door need be opened when 2, replenishing raw material, storage tank need be do not dismantled, easy to operate;
3, storage tank heating and attemperating unit make raw material remain on constant vapourizing temperature, keep constant evaporating capacity;
4, the analgesic and attemperator of conveyance conduit guarantees that the gas after the vaporization can condensation, keeps gas circuit unimpeded;
5, have function of on-line cleaning, can clean liquid residual in the conveyance conduit and solid particle easily.
Description of drawings
Fig. 1 principle schematic of the present invention
Label is among the figure:
1-flow regulator 2-vapor outlet port 3-heating tape 4-magnetic valve
The admission line 6-of 5-branch charge door 7-liquid 8-annular heating jacket
9-temperature probe 10-temperature controller 11-storage tank
The 12-conveyance conduit
The specific embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is set forth in detail, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
A kind of low temperature plasma grafting gasification method and device as shown in Figure 1; A kind of low temperature plasma grafting gasification method and device; Comprise storage tank 11, heater, attemperating unit 10, cleaning device and flow regulator 1; Described storage tank 1 is made up of storage cavity, loam cake and sealing ring, connect with screw between storage cavity and the loam cake, on covered charge door 6, gas outlet and temperature probe 9 installing ports; Through the sealing of " O " shape sealing ring, described heater comprises the heating of storage tank 1 and the heating of conveyance conduit 12 between charge door 6, gas outlet and temperature probe 9 installing ports and the loam cake.The heater of said storage tank 11 is annular heating jacket 8, is sheathed on the outer wall of storage tank 11, and the heater of said conveyance conduit 12 is heating tape 3, is wound in conveyance conduit 12 outer walls.Said low temperature plasma grafting vaporization appearance comprises the heat tracing control of storage tank 11 and the heat tracing control of vaporization back gas transmission pipeline 12.Said cleaning device is made up of pipeline and magnetic valve 4; Magnetic valve 4 is opened during cleaning; Cleaned air enters into gas transmission pipeline 12; Under the suction function in the Low Temperature Plasma Treating chamber, cleaned air express delivery gas coming through conveyance conduit 12 is drawn out of with agglomeration liquid vaporization residual in the pipeline and with air; Described flow regulator 1 is accomplished by flowmeter, and the flow regulator 1 of flowing through of the gas after the vaporization reaches the purpose of quantitative control gas flow through the open degree of regulating flowmeter.
The concrete operations step is: certain amount of fluid 7 raw materials are injected in the storage tank 11, storage tank 11 is heated and is incubated in uniform temperature, make the vaporizing liquid in the storage tank 11; Steam after the vaporization from storage tank 11 through conveyance conduits 12 and flow regulator 1 to arriving steam (vapor) outlet 2, conveyance conduit 12 outer walls heat and be incubateds to rise with the liquid charging stock after guaranteeing to vaporize and are not condensed; The size of output gas flow is by flow regulator 1 control; Exit at storage tank 11 steam is provided with branch's admission line 5, branch's admission line 5 and atmosphere, and the centre has magnetic valve 4 control the logical of this pipeline to close, residual raw material in the convenient cleaning steam conveying pipe 12 when changing raw material to be implemented in.
Embodiment 1:
Liquid charging stock is selected acrylic acid, and heating-up temperature is 30 ℃, and the pipe insulation temperature is 35 ℃.
The output channel of grafting appearance of at first will vaporizing is connected with the grafting import of Low Temperature Plasma Treating appearance.100 milliliters acrylic acid is joined in the storage tank, and the sealing charge door; Liquid in the storage tank heats, and constant temperature when arriving 30 ℃ is heated to 35 ℃ and constant temperature with conveyance conduit simultaneously; After matching used Low Temperature Plasma Treating appearance arrives the charging stage, regulate the flowmeter on the conveyance conduit, the charge flow rate of gas is adjusted to setting value (6 ml/min).
When pipeline cleans, close the giving vent to anger of storage tank after, conveyance conduit is heated insulation in the time of 35 ℃.The output channel of maintenance vaporization grafting appearance is connected with the grafting import of Low Temperature Plasma Treating appearance; The vavuum pump of opening the Low Temperature Plasma Treating appearance vacuumizes, and open the intake valve of branch's admission line this moment, under the effect of negative pressure of vacuum; Pure air gets into conveyance conduit; Under air-flow and action of temperature, original residual liquid charging stock vaporization and quilt are taken away, kept certain hour (2 minutes), accomplished the pipeline cleaning.
Embodiment 2:
Liquid charging stock is selected methyl methacrylate, and heating-up temperature is 25 ℃, and the pipe insulation temperature is 35 ℃.
The output channel of grafting appearance of at first will vaporizing is connected with the grafting import of Low Temperature Plasma Treating appearance.100 milliliters methyl methacrylate is joined in the storage tank, and the sealing charge door; Liquid in the storage tank heats, and constant temperature when arriving 30 ℃ is heated to 35 ℃ and constant temperature with conveyance conduit simultaneously; After matching used Low Temperature Plasma Treating appearance arrives the charging stage, regulate the flowmeter on the conveyance conduit, the charge flow rate of gas is adjusted to setting value (6 ml/min).
When pipeline cleans, close the gas outlet of storage tank, conveyance conduit is heated, insulation in the time of 35 ℃.The output channel of maintenance vaporization grafting appearance is connected with the grafting import of Low Temperature Plasma Treating appearance; The vavuum pump of opening the Low Temperature Plasma Treating appearance vacuumizes, and open the intake valve of branch's admission line this moment, under the effect of negative pressure of vacuum; Pure air gets into conveyance conduit; Under air-flow and action of temperature, original residual liquid charging stock vaporization and quilt are taken away, kept certain hour (2 minutes), accomplished the pipeline cleaning.
The above; Be merely the specific embodiment of the present invention; But protection scope of the present invention is not limited thereto; Any those of ordinary skill in the art are in the technical scope that the present invention disclosed, and variation or the replacement that can expect without creative work all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain that claims were limited.

Claims (5)

1. the method for a grafting vaporization is characterized in that: in vacuum-packed container, with the liquid charging stock vaporization and through utilidor and quantitative the hanging down of flow controller gas is transported in the reaction of low temperature plasma chamber.
2. the method that said a kind of grafting is vaporized according to claim 1; Device comprises storage tank, heater, attemperating unit, cleaning device and flow regulator; It is characterized in that; Described storage tank is made up of storage cavity, loam cake and sealing ring, connect with screw between storage cavity and the loam cake, on covered charge door, gas outlet and temperature probe installing port; Through the sealing of " O " shape sealing ring, described heater comprises the heating of storage tank and the heating of conveyance conduit between charge door, gas outlet and temperature probe installing port and the loam cake.
3. a kind of low temperature plasma grafting vapourizing unit according to claim 2; It is characterized in that the heater of said storage tank is annular heating jacket, be sheathed on the outer wall of storage tank; The heater of said conveyance conduit is the heating tape, is wound in the conveyance conduit outer wall.
4. a kind of low temperature plasma grafting vapourizing unit according to claim 1 is characterized in that, said low temperature plasma grafting vaporization appearance comprises the heat tracing control of storage tank and the heat tracing control of vaporization back gas transmission pipeline.
5. a kind of low temperature plasma grafting vapourizing unit according to claim 1 is characterized in that said cleaning device is made up of pipeline and magnetic valve, and described flow regulator is accomplished by flowmeter.
CN2011101017148A 2011-04-22 2011-04-22 Low temperature plasma grafting vaporization method and apparatus Pending CN102744024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101017148A CN102744024A (en) 2011-04-22 2011-04-22 Low temperature plasma grafting vaporization method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101017148A CN102744024A (en) 2011-04-22 2011-04-22 Low temperature plasma grafting vaporization method and apparatus

Publications (1)

Publication Number Publication Date
CN102744024A true CN102744024A (en) 2012-10-24

Family

ID=47024722

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101017148A Pending CN102744024A (en) 2011-04-22 2011-04-22 Low temperature plasma grafting vaporization method and apparatus

Country Status (1)

Country Link
CN (1) CN102744024A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110042649A (en) * 2019-05-20 2019-07-23 江南大学 A kind of atmospheric pressure plasma equipment and its application arranged for fabric functional

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998010116A1 (en) * 1996-09-05 1998-03-12 Talison Research Ultrasonic nozzle feed for plasma deposited film networks
CN1490267A (en) * 2003-07-14 2004-04-21 烽火通信科技股份有限公司 Method for manufacturing rare earth extended fibre-optical prefabricated bar
CN1924086A (en) * 2006-09-22 2007-03-07 西安工业大学 Liquid-conveying metallorganics chemical vapour deposition apparatus
CN101831079A (en) * 2009-03-13 2010-09-15 中国纺织科学研究院 Method and device for modifying surface of polymer material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998010116A1 (en) * 1996-09-05 1998-03-12 Talison Research Ultrasonic nozzle feed for plasma deposited film networks
CN1490267A (en) * 2003-07-14 2004-04-21 烽火通信科技股份有限公司 Method for manufacturing rare earth extended fibre-optical prefabricated bar
CN1924086A (en) * 2006-09-22 2007-03-07 西安工业大学 Liquid-conveying metallorganics chemical vapour deposition apparatus
CN101831079A (en) * 2009-03-13 2010-09-15 中国纺织科学研究院 Method and device for modifying surface of polymer material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110042649A (en) * 2019-05-20 2019-07-23 江南大学 A kind of atmospheric pressure plasma equipment and its application arranged for fabric functional
CN110042649B (en) * 2019-05-20 2020-08-04 江南大学 Atmospheric pressure plasma equipment for fabric function finishing and application thereof

Similar Documents

Publication Publication Date Title
CN104667550B (en) A kind of MVR continuous evaporation system
WO2018161382A1 (en) Apparatus for preparing large-area perovskite thin film
CN110529736A (en) A kind of chemical gas-phase deposition system and feeder and air supply method
CN107488837A (en) Material microcosmic surface syntype coating system
CN205856602U (en) A kind of energy-efficient formula zinc selenide gaseous phase deposition stove
CN102744024A (en) Low temperature plasma grafting vaporization method and apparatus
CN202558935U (en) Chemical vapor deposition device capable of continuously preparing two-dimension nanometer thin films
CN202270517U (en) Low-temperature plasma graft vaporization instrument
CN110729870B (en) Alkali metal seed injection device
CN204395959U (en) A kind of anticorrosion reaction unit of temperature-control pressure-control
CN211399738U (en) Snakelike fire tube type gas steam generator
CN201680348U (en) Low-temperature steam generator and low-temperature concentration machine unit
CN207880802U (en) A kind of multisection type electric heating Quick steam generator
CN206670387U (en) Residual heat from kiln furnace utilizes heater
CN207042473U (en) Reactor
CN203284461U (en) Gas distribution vertical type PECVD furnace
CN104876418A (en) Continuous-flow electromagnetic wave sludge dehydration experimental device and dehydration method
CN213835530U (en) Solid-state source bottle
CN101738065A (en) Particle drying device
CN205504926U (en) Low pressure steam generating device
CN210856329U (en) Chemical vapor deposition system and gas supply device
CN109624134A (en) A kind of butadiene-styrene rubber drying device and drying means reducing discharge amount of exhaust gas
CN213066904U (en) Tea-seed oil purification is flash distillation drying device for dehydration
CN201331237Y (en) Particulate matter drying device
CN207918741U (en) A kind of polyurethane water-proof paint production energy-saving system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121024