CN102738351A - 发光二极管封装结构及其制造方法 - Google Patents
发光二极管封装结构及其制造方法 Download PDFInfo
- Publication number
- CN102738351A CN102738351A CN2011100831482A CN201110083148A CN102738351A CN 102738351 A CN102738351 A CN 102738351A CN 2011100831482 A CN2011100831482 A CN 2011100831482A CN 201110083148 A CN201110083148 A CN 201110083148A CN 102738351 A CN102738351 A CN 102738351A
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- Prior art keywords
- electrode
- groove
- emitting diode
- led
- light
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000013459 approach Methods 0.000 claims description 12
- 239000012774 insulation material Substances 0.000 claims description 9
- 230000000994 depressogenic effect Effects 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 235000019994 cava Nutrition 0.000 claims 2
- 239000000463 material Substances 0.000 description 11
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- 238000002347 injection Methods 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
发光二极管封装结构 | 100、200、300 |
电极 | 10 |
第一电极 | 11 |
凹槽 | 111、111a |
顶面 | 112 |
反射层 | 114 |
第二电极 | 12 |
通道 | 13、13a |
连接电极 | 20 |
第一连接电极 | 21 |
固定端 | 211、221 |
自由端 | 212、222 |
第二连接电极 | 22 |
间隙 | 23 |
发光二极管芯片 | 30 |
焊点 | 31 |
透镜 | 40、62 |
入光面 | 41 |
出光面 | 42、621 |
凸出部 | 421 |
侧面 | 43 |
空间 | 44 |
绝缘层 | 50、61 |
覆盖层 | 60 |
罩体 | 63 |
模具 | 70 |
容置腔体 | 71 |
凹陷部 | 72 |
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110083148.2A CN102738351B (zh) | 2011-04-02 | 2011-04-02 | 发光二极管封装结构及其制造方法 |
TW100111736A TWI531089B (zh) | 2011-04-02 | 2011-04-06 | 發光二極體封裝結構及其製造方法 |
US13/326,340 US8552462B2 (en) | 2011-04-02 | 2011-12-15 | LED package and method for manufacturing the same |
US14/014,403 US8900895B2 (en) | 2011-04-02 | 2013-08-30 | Method for manufacturing LED package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110083148.2A CN102738351B (zh) | 2011-04-02 | 2011-04-02 | 发光二极管封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102738351A true CN102738351A (zh) | 2012-10-17 |
CN102738351B CN102738351B (zh) | 2015-07-15 |
Family
ID=46926052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110083148.2A Expired - Fee Related CN102738351B (zh) | 2011-04-02 | 2011-04-02 | 发光二极管封装结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8552462B2 (zh) |
CN (1) | CN102738351B (zh) |
TW (1) | TWI531089B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103151446A (zh) * | 2013-03-04 | 2013-06-12 | 中国科学院半导体研究所 | 无支架led封装结构及封装方法 |
CN103151445A (zh) * | 2013-03-04 | 2013-06-12 | 中国科学院半导体研究所 | 低热阻led封装结构及封装方法 |
CN118016782A (zh) * | 2024-04-10 | 2024-05-10 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led器件及其制备方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105340102B (zh) * | 2013-05-21 | 2017-12-08 | Lg化学株式会社 | 有机电子器件 |
KR101844535B1 (ko) * | 2013-12-27 | 2018-04-02 | 인텔 코포레이션 | 광전자 패키징 어셈블리 |
CN104752369B (zh) * | 2013-12-27 | 2018-02-16 | 展晶科技(深圳)有限公司 | 光电元件模组 |
DE102015214228A1 (de) * | 2015-07-28 | 2017-02-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Bauelements und ein Bauelement |
KR102503215B1 (ko) | 2016-03-28 | 2023-02-24 | 삼성전자 주식회사 | 발광 소자 패키지 |
TWI662724B (zh) * | 2018-06-06 | 2019-06-11 | 海華科技股份有限公司 | 覆晶式發光模組 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344978A (ja) * | 2005-06-10 | 2006-12-21 | Samsung Electronics Co Ltd | Ledパッケージ及びその製造方法、並びにそれを利用したledアレイモジュール |
CN101026207A (zh) * | 2006-02-23 | 2007-08-29 | 宏齐科技股份有限公司 | 发光二极管的封装结构及其封装方法 |
CN101338865A (zh) * | 2008-05-23 | 2009-01-07 | 段永成 | 一种低衰减高光效led照明装置及制备方法 |
CN101378096A (zh) * | 2007-08-27 | 2009-03-04 | 财团法人工业技术研究院 | 发光二极管封装结构 |
CN102054829A (zh) * | 2010-11-05 | 2011-05-11 | 深圳市华星光电技术有限公司 | 发光二极管封装构造 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270638A (ja) * | 2001-03-06 | 2002-09-20 | Nec Corp | 半導体装置および樹脂封止方法および樹脂封止装置 |
US20070290220A1 (en) * | 2006-06-20 | 2007-12-20 | Bily Wang | Package for a light emitting diode and a process for fabricating the same |
-
2011
- 2011-04-02 CN CN201110083148.2A patent/CN102738351B/zh not_active Expired - Fee Related
- 2011-04-06 TW TW100111736A patent/TWI531089B/zh not_active IP Right Cessation
- 2011-12-15 US US13/326,340 patent/US8552462B2/en not_active Expired - Fee Related
-
2013
- 2013-08-30 US US14/014,403 patent/US8900895B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344978A (ja) * | 2005-06-10 | 2006-12-21 | Samsung Electronics Co Ltd | Ledパッケージ及びその製造方法、並びにそれを利用したledアレイモジュール |
CN101026207A (zh) * | 2006-02-23 | 2007-08-29 | 宏齐科技股份有限公司 | 发光二极管的封装结构及其封装方法 |
CN101378096A (zh) * | 2007-08-27 | 2009-03-04 | 财团法人工业技术研究院 | 发光二极管封装结构 |
CN101338865A (zh) * | 2008-05-23 | 2009-01-07 | 段永成 | 一种低衰减高光效led照明装置及制备方法 |
CN102054829A (zh) * | 2010-11-05 | 2011-05-11 | 深圳市华星光电技术有限公司 | 发光二极管封装构造 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103151446A (zh) * | 2013-03-04 | 2013-06-12 | 中国科学院半导体研究所 | 无支架led封装结构及封装方法 |
CN103151445A (zh) * | 2013-03-04 | 2013-06-12 | 中国科学院半导体研究所 | 低热阻led封装结构及封装方法 |
CN103151445B (zh) * | 2013-03-04 | 2017-02-08 | 中国科学院半导体研究所 | 低热阻led封装结构及封装方法 |
CN118016782A (zh) * | 2024-04-10 | 2024-05-10 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US8900895B2 (en) | 2014-12-02 |
US8552462B2 (en) | 2013-10-08 |
US20140004633A1 (en) | 2014-01-02 |
TWI531089B (zh) | 2016-04-21 |
TW201242095A (en) | 2012-10-16 |
US20120248482A1 (en) | 2012-10-04 |
CN102738351B (zh) | 2015-07-15 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SCIENBIZIP CONSULTING (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Effective date: 20150605 Free format text: FORMER OWNER: ADVANCED OPTOELECTRONIC TECHNOLOGY INC. Effective date: 20150605 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150605 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: Zhanjing Technology (Shenzhen) Co., Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20160402 |