CN102738301A - Method for forming crystalline silicon solar cell front electrode - Google Patents
Method for forming crystalline silicon solar cell front electrode Download PDFInfo
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- CN102738301A CN102738301A CN2012101972162A CN201210197216A CN102738301A CN 102738301 A CN102738301 A CN 102738301A CN 2012101972162 A CN2012101972162 A CN 2012101972162A CN 201210197216 A CN201210197216 A CN 201210197216A CN 102738301 A CN102738301 A CN 102738301A
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Abstract
The invention relates to a method for forming a crystalline silicon solar cell front electrode, which comprises the steps that after the double-sided texturing monocrystalline silicon backside printing aluminum subjected to texturing, diffusing, surface passivating and front antireflection coating forming is dried by field and back silver electrodes, a thin grid silver electrode is firstly printed at the front side of a silicon wafer and dried; then, only the main grid electrode is printed, or the main grid electrode is printed and a thin grid electrode is printed for the second time, and are dried; and the dried main grid electrode and the thin grid electrode are fed into a tunnel furnace for sintering, so the crystalline silicon solar cell front electrode is obtained. Because the secondary printing technology is adopted, the method has the advantages of the secondary printing technology, and is suitable for industrial production; and under the condition of ensuring the enough good ohmic contact of the thin grid electrode, the main grid electrode is prevented from being directly contacted with the silicon wafer, the surface passivation area is increased, the interfacial compound of the photon-generated carrier is reduced, and the photoelectric conversion efficiency of a solar cell is improved.
Description
Technical field
The invention belongs to the print field of front electrode of solar battery, particularly a kind of formation method of crystal silicon solar energy battery front electrode.
Background technology
Along with the develop rapidly of heliotechnics, improve solar cell photoelectric conversion efficiency, reducing production costs becomes the main target of present solar cell industry research and development.A kind of method of effective raising battery efficiency is exactly to increase incident light quantity as far as possible; Reduce battery front side by the area of electrode shield portions; This just requires the width of electrode more and more thinner, increases simultaneously but thing followed problem is the resistance loss of electrode, has offset the shading loss greatly and has reduced the advantage of bringing; Therefore the width of electrode will guarantee that when reducing certain electrode sections is long-pending, and electrode height (thickness) needs to increase.But a traditional screen printing technique is because the precision of slurry itself and silk screen printing is limited, and not only the thickness of electrode is difficult to increase but also the short-term phenomenon is very serious.At this moment, the second electrode printing technology has solved the thickness and the short-line problem of electrode printing.The traditional secondary printing technology is to print positive silver electrode at twice, and the thin grid of the first impression adopt same silver slurry printing main grid and thin grid for the second time.
The positive silver electrode of general crystal silicon photovoltaic cell is divided into main grid and thin grid, and electrode silver plasm is printed on the antireflective coating through screen printing technique, is burnt through the anti-reflection rete below the silver slurry behind the high temperature sintering, and silver forms ohmic contact closely with silicon chip.Yet, though silver can reduce the contact resistance loss with the direct contact of silicon chip, caused the load aggravation of surperficial charge carrier, especially unfavorable to short wavelength's photo-generated carrier.
Summary of the invention
Technical problem to be solved by this invention provides a kind of formation method of crystal silicon solar energy battery front electrode, and this method has continued the advantage of secondary printing technology owing to adopted the secondary printing technology, and suitable suitability for industrialized production; Guaranteeing that thin gate electrode has under the situation of enough good Ohmic contact, avoiding main grid electrode and the direct of silicon chip to contact, increased the surface passivation area, reducing photo-generated carrier compound at the interface, improving the photoelectric conversion efficiency of solar cell.
The formation method of a kind of crystal silicon solar energy battery front electrode of the present invention comprises:
Through the monocrystalline silicon back up aluminium of the two sides making herbs into wool after the making herbs into wool, diffusion, surface passivation processing, front antireflective film film forming by field and back of the body silver electrode and oven dry after, at first in the thin gate electrode of the positive printing of silicon chip, oven dry; Only print the main grid electrode then and perhaps print the main grid electrode simultaneously and thin gate electrode is carried out the second impression, oven dry, wherein, the silver content of the used silver slurry of second impression main grid electrode is lower than the thin gate electrode of the first impression; Dry laggard continuous tunnel furnace sintering, promptly get.
The silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 1 ~ 10%.
The silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 5%.
The silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 10%.
Glass dust softening point in the used silver slurry of the said second impression is than high 1 ~ 50 degree of the used silver slurry of the first impression.
Silver content 80%-85% in the first impression silver slurry, softening 400-500 ℃ of glass dust; Silver content 70% ~ 84% for the second time, softening 450-550 ℃ of glass dust.
The present invention adopts different silver electrode pastes to print front electrode at twice.The thin grid line of the first impression, second impression main grid line or print main grid line and thin grid line simultaneously, and main grid line and the different silver electrode paste (as shown in Figure 1) of thin grid line employing.The common front silver electrode paste with high silver content high conductivity of thin gate electrode printing is grilled thoroughly the passivation layer under it in high-temperature sintering process, form good Ohmic contact with silicon chip, collects charge carrier and output as negative electrode, presents low contact resistance.And the silver electrode paste that the main grid line is adopted is not grilled thoroughly the antireflective film under it; Behind sintering, just contact with the surperficial antireflective film bonding of cell silicon chip; And Different Silicon produces directly contact; Only, can reduce electric conductivity simultaneously, adopt the lower preparing electrode paste of silver content as the also bracing and the welding electrode of thin grid.Certainly, silver content can not be low excessively, otherwise can influence weld strength, causes battery efficiency to descend.
If pay attention to battery cost more the efficient of battery is improved requirement seldom, then the main grid of the main grid of the second impression or the second impression can adopt the lower silver electrode paste of silver content than thin grid with thin grid.In general, up to 80 ~ 85% silver content, the main grid silver content can hang down 1% ~ 10% relatively than thin grid, though this silver content conductivity is poorer than thin grid, as long as guarantee the weldability of main grid electrode.
The separate sources of the together thin grid silver of main grid silver slurry slurry function is in the difference of silver-colored slurry formula, and it is different that the main feature that main grid does not burn antireflective film with silver-colored slurry comes from the prescription and the softening point of glass dust in the main grid silver slurry.With glass dust softening point in the silver slurry, main grid can improve 1 ~ 50 ℃ with silver-colored slurry with respect to thin grid.The glass dust softening point is high more, and silver content is low more, and reactivity is just low more during silver slurry sintering, is not easy to grill thoroughly passivation layer.
Beneficial effect
(1) silicon solar cell front electrode of the present invention separates the effect of thin grid of electrode and main grid; Guaranteeing that thin gate electrode has under the situation of enough good Ohmic contact; Avoided main grid electrode and the direct of silicon chip to contact; Increase the surface passivation area, reduced photo-generated carrier compound at the interface, improved the photoelectric conversion efficiency of solar cell;
(2) the present invention is guaranteeing that thin gate electrode has enough good Ohmic contact; Thin grid and main grid have enough adhesive strengths with silicon chip; And main grid has under the situation of good weldability, suitably lowers the silver content of the thin grid slurry of the main grid slurry or the second impression, practiced thrift the battery cost;
(3) preparation method of the present invention has continued the advantage of secondary printing technology owing to adopted the secondary printing technology, and suitable suitability for industrialized production.
Description of drawings
Fig. 1 is the crystal silicon solar energy battery front electrode of the present invention's preparation; Wherein, 1 is silicon chip; 2 for the thin gate electrode of the first impression; 3 for the main grid electrode of the second impression; 4 for the thin gate electrode of the second impression; 5 is surperficial antireflective film;
Fig. 2 is the crystal silicon solar energy battery front electrode of the present invention's preparation; Wherein, 1 is silicon chip; 2 for the thin gate electrode of the first impression; 3 for the main grid electrode of the second impression; 5 is surperficial antireflective film.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
1) electrode slurry
The thin grid of the first impression are starched with silver: select conventional solar cells silver slurry for use, silver content is 85%, and the glass dust softening point is 460 ℃.
Second impression main grid is starched with silver: select conventional solar cells silver slurry for use, silver content is 80%, and the glass dust softening point is 500 ℃, and conductivity is lower than thin grid and starches with silver.
2) front electrode manufacture method
Through the monocrystalline silicon back up aluminium of the specification 125mmx125mm two sides making herbs into wool after making herbs into wool, diffusion and surface passivation processing, the front antireflective film film forming by field and back of the body silver electrode and 200 degree oven dry after.At first, adopt the silver paste of solar cells described in 1, advance the continuous tunnel furnace oven dry, 200 ℃ of temperature in the thin grid silver electrode of the positive printing of silicon chip.Main grid in the second impression front electrode and thin grid are carried out the second impression advances the continuous tunnel furnace oven dry then, and 200 ℃ of temperature are dried laggard continuous tunnel furnace sintering, 775 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes property and outward appearance are measured in the back of coming out of the stove.
1) electrode slurry
The thin grid of the first impression are starched with silver: silver content is 80%, and the glass dust softening point is 460 ℃.
Second impression main grid is starched with silver: silver content is 75%, and the glass dust softening point is 500 ℃, and conductivity is lower than thin grid with the silver slurry.
2) front electrode manufacture method
Through the monocrystalline silicon back up aluminium of the specification 125mmx125mm two sides making herbs into wool after making herbs into wool, diffusion and surface passivation processing, the front antireflective film film forming by field and back of the body silver electrode and 200 degree oven dry after.At first, adopt the silver paste of solar cells described in 1, advance the continuous tunnel furnace oven dry, 200 ℃ of temperature in the thin grid silver electrode of the positive printing of silicon chip.Main grid in the second impression front electrode and thin grid are carried out the second impression advances the continuous tunnel furnace oven dry then, and 200 ℃ of temperature are dried laggard continuous tunnel furnace sintering, 775 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes property and outward appearance are measured in the back of coming out of the stove.
Embodiment 3
1) electrode slurry
The thin grid of the first impression are starched with silver: silver content is 80%, and the glass dust softening point is 460 ℃.
Second impression main grid is starched with silver: silver content is 70%, and the glass dust softening point is 500 ℃, and conductivity is lower than thin grid with the silver slurry.
2) front electrode manufacture method
Through the monocrystalline silicon back up aluminium of the specification 125mmx125mm two sides making herbs into wool after making herbs into wool, diffusion and surface passivation processing, the front antireflective film film forming by field and back of the body silver electrode and 200 degree oven dry after.At first, adopt the silver paste of solar cells described in 1, advance the continuous tunnel furnace oven dry, 200 ℃ of temperature in the thin grid silver electrode of the positive printing of silicon chip.Main grid in the second impression front electrode and thin grid are carried out the second impression advances the continuous tunnel furnace oven dry then, and 200 ℃ of temperature are dried laggard continuous tunnel furnace sintering, 775 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes property and outward appearance are measured in the back of coming out of the stove.
Comparative example 1
1) electrode slurry
The thin grid of the first impression are starched with silver: silver content is 80%, and the glass dust softening point is 460 ℃.
Second impression main grid is starched with silver: silver content is 80%, and the glass dust softening point is 460 ℃.
2) front electrode manufacture method
Through the monocrystalline silicon back up aluminium of the specification 125mmx125mm two sides making herbs into wool after making herbs into wool, diffusion and surface passivation processing, the front antireflective film film forming by field and back of the body silver electrode and 200 degree oven dry after.At first, adopt the silver paste of solar cells described in 1, advance the continuous tunnel furnace oven dry, 200 ℃ of temperature in the thin grid silver electrode of the positive printing of silicon chip.Main grid in the second impression front electrode and thin grid are carried out the second impression advances the continuous tunnel furnace oven dry then, and 200 ℃ of temperature are dried laggard continuous tunnel furnace sintering, 775 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes property and outward appearance are measured in the back of coming out of the stove.
Comparative example 2
The thin grid of the first impression are starched with silver: silver content is 70%, and the glass dust softening point is 500 ℃.
Second impression main grid is starched with silver: silver content is 70%, and the glass dust softening point is 500 ℃.
2) front electrode manufacture method
Through the monocrystalline silicon back up aluminium of the specification 125mmx125mm two sides making herbs into wool after making herbs into wool, diffusion and surface passivation processing, the front antireflective film film forming by field and back of the body silver electrode and 200 degree oven dry after.At first, adopt the silver paste of solar cells described in 1, advance the continuous tunnel furnace oven dry, 200 ℃ of temperature in the thin grid silver electrode of the positive printing of silicon chip.Main grid in the second impression front electrode and thin grid are carried out the second impression advances the continuous tunnel furnace oven dry then, and 200 ℃ of temperature are dried laggard continuous tunnel furnace sintering, 775 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes property and outward appearance are measured in the back of coming out of the stove.
Solar battery efficiency is measured as follows:
Visible by The above results, adopt positive silver electrode formation method of the present invention, can improve the photoelectric conversion efficiency of battery.If but adopted main grid fully with the thin grid of pulp preparation, then owing to could not form ohmic contact, conversion efficiency very low (comparative example 2).If adopt the silver slurry of low silver content to form main grid, not only can raise the efficiency, though the raising of efficient is less, perhaps do not improve (embodiment 3), can practice thrift cost significantly.
Claims (5)
1. the formation method of a crystal silicon solar energy battery front electrode comprises:
Through the monocrystalline silicon back up aluminium of the two sides making herbs into wool after the making herbs into wool, diffusion, surface passivation processing, front antireflective film film forming by field and back of the body silver electrode and oven dry after, at first in the thin gate electrode of the positive printing of silicon chip, oven dry; Only print the main grid electrode then and perhaps print the main grid electrode simultaneously and thin gate electrode is carried out the second impression, oven dry, wherein, the silver content of the used silver slurry of second impression main grid electrode is lower than the thin gate electrode of the first impression; Dry laggard continuous tunnel furnace sintering, promptly get.
2. the formation method of a kind of crystal silicon solar energy battery front electrode according to claim 1 is characterized in that: the silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 1 ~ 10%.
3. the formation method of a kind of crystal silicon solar energy battery front electrode according to claim 2 is characterized in that: the silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 5%.
4. the formation method of a kind of crystal silicon solar energy battery front electrode according to claim 2 is characterized in that: the silver content of the used silver slurry of said second impression main grid electrode is than the thin gate electrode of the first impression low 10%.
5. the formation method of a kind of crystal silicon solar energy battery front electrode according to claim 1 is characterized in that: the glass dust softening point in the used silver slurry of the said second impression is than high 1 ~ 50 degree of the used silver slurry of the first impression.
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| CN103066135A (en) * | 2013-01-17 | 2013-04-24 | 中山大学 | Front electrode main grid line and silicon substrate isolated selective emitter solar battery and preparation method thereof |
| CN103144453A (en) * | 2012-11-23 | 2013-06-12 | 中利腾晖光伏科技有限公司 | Split type battery film printing method and equipment |
| CN103252983A (en) * | 2013-05-31 | 2013-08-21 | 中利腾晖光伏科技有限公司 | Grid line printing equipment and method for realizing high-quality fine grid printing by adopting same |
| CN103606571A (en) * | 2013-11-27 | 2014-02-26 | 中电电气（扬州）光伏有限公司 | Method for forming electrodes of IBC solar cell |
| CN104157729A (en) * | 2014-07-22 | 2014-11-19 | 广东爱康太阳能科技有限公司 | Positive electrode structure of crystal silicon solar battery and printing process thereof |
| CN104576820A (en) * | 2013-10-21 | 2015-04-29 | 应用材料意大利有限公司 | Method for producing a backside contact in a solar cell device and solar cell device |
| CN105856807A (en) * | 2016-04-06 | 2016-08-17 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar cell double-time printing equipment, printing technique adopting same and crystalline silicon solar cell prepared by adopting printing technique |
| CN105957580A (en) * | 2016-06-22 | 2016-09-21 | 常州聚和新材料股份有限公司 | Silver paste combination for secondary printing of crystalline silicon solar cell |
| CN106142822A (en) * | 2015-04-22 | 2016-11-23 | 江苏正能电子科技有限公司 | A kind of solar silicon wafers just silver Printing screen |
| CN106601328A (en) * | 2016-12-21 | 2017-04-26 | 北京市合众创能光电技术有限公司 | Positive silver paste of crystalline silicon solar cell laminated printing and preparation method thereof |
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| CN110993726A (en) * | 2019-10-30 | 2020-04-10 | 晶澳（扬州）太阳能科技有限公司 | Printing process of solar cell |
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| CN111584669A (en) * | 2020-05-29 | 2020-08-25 | 中威新能源(成都)有限公司 | Silicon heterojunction SHJ solar cell and preparation method thereof |
| CN111640818A (en) * | 2020-04-29 | 2020-09-08 | 常州比太黑硅科技有限公司 | Distribution and manufacturing method of solar cell conductive electrode wires |
| WO2020220392A1 (en) * | 2019-04-29 | 2020-11-05 | 南通天盛新能源股份有限公司 | Metallization method for front electrode of n-type solar cell |
| CN112563348A (en) * | 2021-01-07 | 2021-03-26 | 南通天盛新能源股份有限公司 | Metallization method for passivation contact of tunneling oxide layer on back electrode of solar cell |
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| CN103066135B (en) * | 2013-01-17 | 2016-03-02 | 中山大学 | Selective emitter solar battery that a kind of front electrode main grid line and silicon substrate are isolated and preparation method thereof |
| CN103066135A (en) * | 2013-01-17 | 2013-04-24 | 中山大学 | Front electrode main grid line and silicon substrate isolated selective emitter solar battery and preparation method thereof |
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| CN103606571A (en) * | 2013-11-27 | 2014-02-26 | 中电电气（扬州）光伏有限公司 | Method for forming electrodes of IBC solar cell |
| CN104157729A (en) * | 2014-07-22 | 2014-11-19 | 广东爱康太阳能科技有限公司 | Positive electrode structure of crystal silicon solar battery and printing process thereof |
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Application publication date: 20121017 |