CN102736333B - 一种阵列基板、液晶显示装置和阵列基板的制作方法 - Google Patents
一种阵列基板、液晶显示装置和阵列基板的制作方法 Download PDFInfo
- Publication number
- CN102736333B CN102736333B CN201210201027.8A CN201210201027A CN102736333B CN 102736333 B CN102736333 B CN 102736333B CN 201210201027 A CN201210201027 A CN 201210201027A CN 102736333 B CN102736333 B CN 102736333B
- Authority
- CN
- China
- Prior art keywords
- copper
- conductive layer
- array base
- base palte
- vanadium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 229910000756 V alloy Inorganic materials 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 56
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 43
- RPYFZMPJOHSVLD-UHFFFAOYSA-N copper vanadium Chemical compound [V][V][Cu] RPYFZMPJOHSVLD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims description 56
- 229910052802 copper Inorganic materials 0.000 claims description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 230000004888 barrier function Effects 0.000 claims description 22
- 239000013077 target material Substances 0.000 claims description 15
- 239000006104 solid solution Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000004220 aggregation Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910016344 CuSi Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000003851 azoles Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210201027.8A CN102736333B (zh) | 2012-06-18 | 2012-06-18 | 一种阵列基板、液晶显示装置和阵列基板的制作方法 |
PCT/CN2012/077302 WO2013189057A1 (zh) | 2012-06-18 | 2012-06-21 | 一种阵列基板、液晶显示装置和阵列基板的制作方法 |
US13/575,351 US20130335663A1 (en) | 2012-06-18 | 2012-06-21 | Array Substrate, LCD Device, and Method for manufacturing Array Substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210201027.8A CN102736333B (zh) | 2012-06-18 | 2012-06-18 | 一种阵列基板、液晶显示装置和阵列基板的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102736333A CN102736333A (zh) | 2012-10-17 |
CN102736333B true CN102736333B (zh) | 2015-07-15 |
Family
ID=46992092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210201027.8A Active CN102736333B (zh) | 2012-06-18 | 2012-06-18 | 一种阵列基板、液晶显示装置和阵列基板的制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102736333B (zh) |
WO (1) | WO2013189057A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105449001B (zh) * | 2015-12-28 | 2019-01-22 | 昆山国显光电有限公司 | 一种薄膜晶体管及其制作方法 |
WO2019230261A1 (ja) * | 2018-05-31 | 2019-12-05 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1622340A (zh) * | 2004-12-13 | 2005-06-01 | 友达光电股份有限公司 | 薄膜晶体管元件及其制造方法 |
CN1714431A (zh) * | 2002-11-19 | 2005-12-28 | 三星电子株式会社 | 用于液晶显示装置的薄膜晶体管基板及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT7491U1 (de) * | 2004-07-15 | 2005-04-25 | Plansee Ag | Werkstoff für leitbahnen aus kupferlegierung |
CN100501541C (zh) * | 2005-01-11 | 2009-06-17 | 友达光电股份有限公司 | 液晶显示组件的铜导线结构及其制造方法 |
CN101546684B (zh) * | 2009-04-30 | 2011-11-16 | 福州大学 | 抗氧化复合薄膜电极 |
WO2011139785A2 (en) * | 2010-04-27 | 2011-11-10 | The Regents Of The University Of Michigan | Display device having plasmonic color filters and photovoltaic capabilities |
-
2012
- 2012-06-18 CN CN201210201027.8A patent/CN102736333B/zh active Active
- 2012-06-21 WO PCT/CN2012/077302 patent/WO2013189057A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1714431A (zh) * | 2002-11-19 | 2005-12-28 | 三星电子株式会社 | 用于液晶显示装置的薄膜晶体管基板及其制造方法 |
CN1622340A (zh) * | 2004-12-13 | 2005-06-01 | 友达光电股份有限公司 | 薄膜晶体管元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102736333A (zh) | 2012-10-17 |
WO2013189057A1 (zh) | 2013-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102769040B (zh) | 薄膜晶体管、阵列基板及其制作方法、显示装置 | |
KR101447342B1 (ko) | 어레이 기판 및 그 제조 방법, 액정 패널, 디스플레이 | |
CN103403850B (zh) | 薄膜晶体管及其制造方法以及显示装置 | |
CN102629577B (zh) | 一种tft阵列基板及其制造方法和显示装置 | |
CN100451793C (zh) | 显示装置及其制造方法 | |
KR101486180B1 (ko) | 액티브 매트릭스 기판의 제조 방법, 표시 패널 및 표시 장치 | |
JP6124668B2 (ja) | 薄膜トランジスタ基板およびその製造方法 | |
KR20100075026A (ko) | 박막 트랜지스터 기판 및 이의 제조 방법 | |
KR101175970B1 (ko) | 배선층, 반도체 장치, 액정 표시 장치 | |
CN103477441A (zh) | 薄膜晶体管、显示面板和薄膜晶体管的制造方法 | |
JP4727702B2 (ja) | 液晶表示装置、及びその製造方法 | |
US10394098B2 (en) | Conductive pattern structure and its array substrate and display device | |
CN108220963B (zh) | 多层膜用蚀刻液组合物、蚀刻方法及阵列基板的制造方法 | |
CN110462830A (zh) | 显示基板及其制备方法、显示面板和显示装置 | |
CN105140131A (zh) | 氧化物薄膜晶体管的制备方法 | |
US20100053523A1 (en) | Transparent conductive film, and substrate, electronic device and liquid crystal display using the same | |
CN106783737A (zh) | 阵列基板及其制造方法、显示面板、显示装置 | |
JP2008306167A (ja) | 薄膜トランジスタ及びその製造方法 | |
CN103915451A (zh) | 一种阵列基板及其制造方法、显示装置 | |
JP2006210477A (ja) | 薄膜トランジスタ及びその製造方法並びに薄膜トランジスタ基板及びその製造方法並びに該薄膜トランジスタを用いた液晶表示装置及び有機el表示装置並びに透明導電積層基板 | |
CN102736333B (zh) | 一种阵列基板、液晶显示装置和阵列基板的制作方法 | |
CN102723334A (zh) | 一种金属氧化物薄膜晶体基板及其制造方法和液晶显示器 | |
CN104409516A (zh) | 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置 | |
KR101136165B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
CN103943631A (zh) | 一种薄膜晶体管阵列基板及其制备方法、液晶显示器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 518000 Guangming Avenue, Guangming New District, Guangdong, Shenzhen 9-2, China Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210310 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |