CN102735350A - Silicon photo-multiplier structure, production and usage - Google Patents
Silicon photo-multiplier structure, production and usage Download PDFInfo
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- CN102735350A CN102735350A CN2011100878116A CN201110087811A CN102735350A CN 102735350 A CN102735350 A CN 102735350A CN 2011100878116 A CN2011100878116 A CN 2011100878116A CN 201110087811 A CN201110087811 A CN 201110087811A CN 102735350 A CN102735350 A CN 102735350A
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Abstract
The present invention relates to producing an avalanche quenching resistor of a silicon photo-multiplier (SiPM) by using a substrate bulk resistor connected with an APD unit. The purpose of the invention is to solve a contradictory problem that the detection efficiency and the dynamic range of the SiPM can not be both considered, and is to guarantee high detection efficiency while still guaranteeing a high dynamic range. The invention proposes the production of the avalanche quenching resistor by using the method of aluminum-induced crystallization of amorphous silicon to simplify production processes of the SiPM, and proposes the adoption of an interdigital-type gemini SiPM device structure and the method of dual-path coincidence measurement of optical signals in order to overcome the problem of high dark counting rate of the SiPM.
Description
1. technical field
The present invention relates to a kind of semiconductor light detector of high-gain, especially have structure, making and the method for application of the silicon photomultiplier detector of single photon resolved detection sensitivity, belong to H01L 27/00 based semiconductor device technology field.
2. technical background
Weak light detection device technology has very important application in fields such as high-energy physics, astrophysics and nuclear medicines.Present most widely used weak light detection device mainly is photomultiplier (PMT).But PMT exists, and volume is big, WV and power consumption are high, damage easily, receive photocathode restriction detection efficiency lower, to magnetic-field-sensitive and be not suitable for making shortcoming such as large scale array, limited its application in many occasions.Development along with the semiconductor light detector; A kind of silicon photomultiplier detector (Silicon photo-multiplier that is called as; SiPM) or be called as the multiple-unit photon counter (Multi-Pixel PhotonCounters, the highly sensitive semiconductor light detector that MPPC) waits more and more comes into one's own in the weak light detection field, its principle of work and developing history are consulted document (D.Renker; Nuclear Instruments and Methods in Physics ResearchA; Vol.567, pp.48-56,2006).This photo-detector generally is of a size of several avalanche photodide (Avalanche Photo Diode to up to a hundred microns by hundreds of to several thousand; APD) the unit monolithic is integrated on the same silicon chip and constitutes, and the resistance (being snowslide cancellation resistance) of an about hundreds of kilohm is all connected in order to the snowslide cancellation and voltage recovery of control APD unit in each APD unit.All APD unit parallel connection outputs, shared 1 load, each APD cell operation is under Geiger mode angular position digitizer (Geigermode), and promptly bias voltage is higher than its voltage breakdown.When some APD unit receives a photon, the photo-generated carrier that is produced will trigger avalanche breakdown, and the opto-electronic conversion gain can reach 10
5-10
6A photon can produce the potential pulse of millivolt magnitude on 50 ohm, its follow-up amplifying circuit becomes very simple.In the linear zone of dynamic range, total output signal is proportional to the number of the APD unit of unit interval generation avalanche breakdown.Because this device can carry out single photon detection as photomultiplier, therefore be known as the silicon photomultiplier detector.The gain of SiPM high (10
5-10
6), WV low (＜100V), low in energy consumption, response speed fast (ns magnitude), volume be little, easy of integration, do not receive magnetic interference, good reliability, with low cost.Each APD cell operation is under count mode; Not gain fluctuation as linear model APD or superfluous noise; Have than the better single photon resolving power of PMT and (consult D.Renker, Nuclear Instruments and Methods inPhysics Research A, Vol.567; Pp.48-56,2006).(consult P.Buzhan, et al., Nuclear Instruments and Methods in Physics Research A, Vol.567 at high-energy physics; Pp.78-82,2006), astrophysics (is consulted N.Otte, Proceedings of the IX International Symposium on Detectorsfor Particle, Astroparticle and Synchrotron Radiation Experiments; SNIC Symposium, Stanford, California; 1,2006), nuclear medicine (is consulted A.N.Otte, Nuclear Instruments andMethods in Physics Research A; Vol.545, pp.705-715,2005), dna sequencing (consults GeorgiyGudkov; Et al., Proc.SPIE, 6372; 63720C-1,2006) etc. the detection range of faint optical signal has the potentiality that substitute traditional photomultiplier, has very application prospects.
SiPM still is in Rapid development stage at present, and the subject matter of existence comprises:
(1) there is contradictory relation between detection efficiency and the dynamic range.The snowslide cancellation resistance of SiPM generally adopts the DOPOS doped polycrystalline silicon resistor stripe that is positioned at device surface, and polysilicon generally adopts the preparation of chemical vapor deposition (CVD) method.If will improve detection efficiency; Need take the APD element number less; The panel detector structure that each cellar area is bigger; But the easy like this probability that cause the above photons of 2 or 2 to be received by same APD unit simultaneously cause under lower photon count rate detector output saturated, and dynamic range is restricted.If will avoid photon count rate saturated, just need take the panel detector structure that the APD cellar area is little, number is many.So " dead band " area ratio of occupying of the polysilicon resistance bar of detector surface, metal A l interconnection line, protection ring dwindles with the APD cellar area and increases; To the ratio that makes photosensitive area with the detector total area (how much fill factor, curve factors) reduction, must sacrifice detection efficiency.
(2) comparatively responsive to temperature.The resistance of DOPOS doped polycrystalline silicon (being snowslide cancellation resistance) increases with temperature, and the avalanche breakdown voltage of SiPM also increases with the increase of temperature simultaneously.Constant when the WV maintenance, the temperature increase causes cancellation resistance to increase, and its dividing potential drop increases, and drops to the structural voltage of APD and reduces.Avalanche breakdown voltage increases with the increase of temperature in addition, causes SiPM overbias (being voltage drop and avalanche breakdown voltage poor on the APD) to reduce, and the gain of SiPM reduces.It is as the same that otherwise temperature reduces.
(3) dark count rate of SiPM is higher.The dark count rate of SiPM is generally 400kHz-1MHz/mm
2, big more than general PMT causes SiPM to be restricted for the detection of atomic low light level signal and the making of large tracts of land SiPM.
3. summary of the invention
To the problem that has contradiction between present SiPM detection efficiency and the dynamic range, the present invention proposes a kind of new structure with high cell density.It is characterized in that adopting the silicon epitaxial wafer epitaxial loayer bulk resistor that links to each other with the APD unit to replace generally being positioned at the doped polycrystalline silicon strip resistance on surface; Snowslide cancellation and the voltage of controlling the APD unit recover (referring to G.Q.Zhang; Etal., Nuclear Instruments and Methods in Physics Research A, Vol.621; Pp.116-120,2010).This structure can be eliminated the resistance material and the interconnected aluminum steel thereof that are positioned at the surface blocking and absorb light; Reduce " dead band " area in the photosensitive area; Make that the APD cellar area is little, density is high, fill factor, curve factor is high, detection efficiency and dynamic range can be taken into account preferably.
To temperature sensitive issue comparatively, the present invention proposes a kind of new snowslide cancellation resistance preparation method to present SiPM.It is characterized in that adopting metallic aluminium (Al) film and the thermal treatment that cover on the amorphous silicon film to induce the amorphous silicon crystallization (referring to DongliZhang; Et al., IEEE Transactions on Electron Devices, VOL.55; Pp.2181-2186; 2008), obtain doped polycrystalline or monocrystalline silicon, and the resistivity of regulating polysilicon film through the thickness and the annealing conditions of control Al film.The sheet resistance of preparation has negative temperature coefficient in this way, and promptly resistance reduces with the temperature increase, and vice versa.Therefore, constant when the WV maintenance, the temperature increase causes cancellation resistance to reduce, and its dividing potential drop reduces, and drops to the structural voltage of APD and increases.Avalanche breakdown voltage increases with the increase of temperature in addition, causes SiPM overbias (being voltage drop and avalanche breakdown voltage poor on the APD) to keep relative stability.In addition, compare with conventional doped polycrystalline sensistor technology, aluminium induces the temperature of amorphous silicon crystallization method manufacture craft lower; The preparation of bar resistor can be adopted lithography stripping (Lifi-off) technology; Realize the hachure preparation easily, do not need extra doping step, technology is simpler.
Higher to present SiPM dark count rate, limited it to the detection of faint optical signal and the making problem of large tracts of land SiPM, the present invention proposes a kind of " interdigital " type Shuangzi SiPM device architecture.Area is less, fully independently sub-SiPM constitutes by 2 to it is characterized in that SiPM, and said 2 sub-SiPM become " interdigital " shapes to arrange.When comprising the faint light pulse of a plurality of photons with one of SiPM measurement (for example a gamma-ray photon is beaten on scintillator, to produce and comprised several fluorescent pulse to hundreds of photons); Because the dark counts of SiPM is the random noise signal that is produced by thermoelectron in the semiconductor silicon material; And contained each photon of light pulse is time correlation, and the pulse signal that they produce almost produces simultaneously.
The present invention proposes a kind of method of new two-way coincidence measurement light signal based on said new construction SiPM.It is characterized in that:
Judge that then said 2 sub-SiPM detect effective light signal during 2 sub-SiPM produce simultaneously pulse signal output that and if only if in a very short time window (for example 50 psec to 500 nanoseconds), and measure and record; What think then if not that said 2 sub-SiPM export respectively is invalid signals such as dark counts or parasitic light, ignores.Because the probability that dark counts appears in 2 sub-SiPM simultaneously in said very short time window greatly reduces, the influence of SiPM dark counts will effectively be cut down, and the area of detector can do more.
4. description of drawings
Fig. 1, substrate bulk resistor cancellation SiPM structural representation of the present invention.
Fig. 2, the present invention " interdigital " type Shuangzi SiPM structural representation.SiPM 1 and SiPM 2 are respectively said 2 sub-SiPM.
5. embodiment
For the new construction SiPM that utilizes the cancellation of substrate bulk resistor, the present invention takes following technical scheme:
A kind of SiPM detector; Be integrated on the same silicon epitaxial wafer and form by many (for example 10 to 100,000) avalanche photo diode (APD) unit; Each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is prepared by said silicon epitaxial wafer epitaxial loayer, all APD unit parallel connection outputs; A shared load is characterized in that:
Said silicon epitaxial wafer is the monocrystalline silicon epitaxial wafer on the low-resistivity substrate, and the resistivity of epitaxial loayer and the product of its thickness are 0.04 Ω cm
2To 25 Ω cm
2
The resistivity of said epitaxial loayer is 2-22 Ω cm or 29-1000 Ω cm; Epitaxy layer thickness is 250-31 μ m or 24-1 μ m.
Said APD is of a size of 20 μ m
2To 35 μ m
2Or 37 μ m
2To 2500 μ m
2
For adopting metallic aluminium (Al) to induce the amorphous silicon crystallization to prepare the new construction SiPM of cancellation resistance, the present invention takes following technical scheme:
A kind of SiPM; Be integrated on the same silicon chip and form by many (for example 10 to 100,000) APD unit, each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is positioned at device surface; And has bar shape; All APD unit parallel connection outputs, a shared load is characterized in that: adopt metallic aluminium to induce the amorphous silicon crystallization method to prepare snowslide cancellation resistance.
Said metallic aluminium induces the amorphous silicon crystallization to make the method for snowslide cancellation resistance; It is characterized in that: make the figure consistent by lithography with positive photoresist with the bar resistor shape at the device surface that is coated with silicon dioxide or insulating silicon nitride deielectric-coating; Adopt electron beam evaporation or magnetically controlled sputter method to prepare thickness successively and be respectively 5-500nm amorphous silicon film and 5-50nm aluminium film; In the solution that removes photoresist, peel off the amorphous silicon and the aluminium film that need not keep; Stay amorphous silicon and the aluminium film of making resistor stripe, at 300-700 ℃ and nitrogen or argon shield annealing 10-150 minute down, the residual aluminium of immersion removal in containing the aluminium corrosive liquid of phosphoric acid.
Said metal hasp and staple induce the amorphous silicon crystallization to make the method for snowslide cancellation resistance; It is characterized in that: adopt electron beam evaporation or magnetically controlled sputter method to prepare thickness successively at the device surface that is coated with silicon dioxide or insulating silicon nitride deielectric-coating and be respectively 5-500nm amorphous silicon film and 5-50nm aluminium film; Make by lithography and the corresponding to figure of resistor stripe shape; Etch away the amorphous silicon and the aluminium film that need not keep with dry method or wet method or the two combination, stay amorphous silicon and the aluminium film of making resistor stripe, through removing photoresist and cleaning; Annealing is 10-150 minute under 300-700 ℃ and nitrogen or argon shield, in containing the aluminium corrosive liquid of phosphoric acid, soaks and removes residual aluminium.
The silicon chip of said making device is monocrystalline silicon piece or silicon epitaxial wafer.
For " interdigital " type Shuangzi SiPM device new construction, the present invention takes following technical scheme:
A kind of SiPM; Be integrated on the same silicon chip and form by many (for example 10 to 100,000) APD unit, each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is positioned at device surface; And has bar shape; The parallel connection output of all APD unit, a shared load is characterized in that: area is less, fully independently sub-SiPM constitutes by 2 for SiPM.
Said 2 sub-SiPM become " interdigital " shape to arrange.
The snowslide cancellation resistance of said SiPM is by the preparation of silicon epitaxial wafer epitaxial loayer, i.e. aforesaid substrate bulk resistor cancellation SiPM.
The snowslide cancellation resistance of said SiPM is the bar resistor that Al induces the preparation of amorphous silicon crystallization method.
The snowslide cancellation resistance of said SiPM is conventional DOPOS doped polycrystalline silicon bar resistor.
The present invention uses said " interdigital ", and type Shuangzi SiPM surveys the method for light signal, it is characterized in that:
2 sub-SiPM take the coincidence measurement technology, judge that then said 2 sub-SiPM detect effective light signal when pulse output is promptly arranged simultaneously in a very short time window (for example 50 psec to 500 nanoseconds), and measure and record; If in 50 time intervals psec to 500 nanosecond, have only 1 sub-SiPM that pulse signal output is arranged, or 2 sub-SiPM do not have pulse signal output, judge that then said 2 sub-SiPM do not detect effective light signal, and its measurement is ignored.
Specify the present invention below in conjunction with instance.
Shown in Figure 1 is substrate bulk resistor cancellation SiPM structural representation.1-N type heavily doped region wherein, 2-P type heavily doped region (high electric field region), 3-snowslide cancellation resistance area, 4-exhausts isolated area, 5-P type Resistance.Adopt the silicon epitaxial wafer of single-sided polishing, < 111>crystal orientation, P type low resistivity substrate material and P type epitaxial loayer, epitaxy layer thickness is 25 μ m, and resistivity is 22 Ω cm.The area of APD unit (being limited high electric field region) is 40 μ m
2, high electric field region is injected by the boron ion and forms.Device area 1mm * 1mm.
Said in other embodiments silicon epitaxial wafer can also be: the N type epitaxial loayer on the P type low resistivity substrate, the N type epitaxial loayer on the N type low resistivity substrate, the P type epitaxial loayer on the N type low resistivity substrate.The shape of SiPM can also be bar shaped, patty or hexagon.
Shown in Figure 2 is the present invention " interdigital " type Shuangzi SiPM structural representation.SiPM 1 and SiPM 2 are respectively said 2 sub-SiPM, and 30 APD unit are respectively arranged, and SiPM has 60 APD unit.Snowslide cancellation resistance is induced the preparation of amorphous silicon crystallization method by Al.The semiconductor material of making device is a monocrystalline silicon piece, has < 100>crystal orientation, single-sided polishing.
In other is implemented, also can adopt silicon epitaxial wafer, the silicon chip crystal orientation can be < 111>or < 110 >.SiPM can have ten thousand APD unit of 10-10, and cancellation resistance can be by conventional DOPOS doped polycrystalline silicon or the preparation of aforementioned silicon epitaxial wafer epitaxial loayer bulk resistor.The shape of SiPM can be bar shaped, patty, hexagon or square.
Need to prove that the foregoing description is merely explains the present invention and unrestricted claim of the present invention, any based on equivalents technology of the present invention, all should be in scope of patent protection of the present invention.
Claims (10)
1. a silicon photomultiplier detector (SiPM); Be integrated on the same silicon epitaxial wafer by 10 to 100,000 avalanche photo diode (APD) unit and form; Each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is prepared by said silicon epitaxial wafer epitaxial loayer, all APD unit parallel connection outputs; A shared load is characterized in that: the resistivity of said silicon epitaxial wafer epitaxial loayer and the product of its thickness are 0.04 Ω cm
2To 25 Ω cm
2
2. SiPM as claimed in claim 1 is characterized in that: the resistivity of said silicon epitaxial wafer epitaxial loayer is 2 Ω cm to 22 Ω cm or 29 Ω cm to 1000 Ω cm, and thickness is 250 μ m to 31 μ m or 24 μ m to 1 μ m.
3. SiPM as claimed in claim 1 is characterized in that: said APD cellar area is 20 μ m
2To 35 μ m
2Or 37 μ m
2To 2500 μ m
2
4. SiPM; Be integrated on the same silicon chip by 10 to 100,000 APD unit and form, each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is positioned at device surface; And has bar shape; All APD unit parallel connection outputs, a shared load is characterized in that: adopt metallic aluminium to induce the amorphous silicon crystallization method to prepare snowslide cancellation resistance.
5. metallic aluminium as claimed in claim 4 induces the amorphous silicon crystallization to make the method for snowslide cancellation resistance; It is characterized in that: adopt electron beam evaporation or magnetically controlled sputter method to prepare thickness successively at the device surface that is coated with dielectric insulating film and be respectively 5nm to 500nm amorphous silicon film and 5nm to 50nm aluminium film; Annealing is 10 minutes to 150 minutes under 300 ℃ to 700 ℃ and nitrogen or argon shield, in the chemical solution of corrosion aluminium, soaks and removes residual aluminium.
6. SiPM as claimed in claim 4 is characterized in that: the bar resistor structure adopts lithography stripping technology or the preparation of chemical wet etching technology.
7. SiPM; Be integrated on the same silicon chip by 10 to 100,000 APD unit and form, each APD unit snowslide cancellation resistance of all connecting, snowslide cancellation resistance is positioned at device surface; And has bar shape; The parallel connection output of all APD unit, a shared load is characterized in that: area is less, fully independently sub-SiPM constitutes by 2 for SiPM.
8. SiPM as claimed in claim 7 is characterized in that: said 2 sub-SiPM become " interdigital " shape to arrange.
9. SiPM as claimed in claim 7 is characterized in that: the snowslide cancellation resistance of said SiPM is prepared by the silicon epitaxial wafer epitaxial loayer, or induces the preparation of amorphous silicon crystallization method by metallic aluminium, or is prepared by the doped polycrystalline silicon strip.
10. method of using the described SiPM of claim 7 to survey light signal is characterized in that:
Said 2 sub-SiPM then measure and record when pulse signal output is arranged in 50 time intervals psec to 500 nanosecond simultaneously; If in 50 time intervals psec to 500 nanosecond, have only 1 sub-SiPM that pulse signal output is arranged, or 2 sub-SiPM do not have pulse signal output, and the measurement of then said 2 sub-SiPM is ignored.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105980885A (en) * | 2013-11-26 | 2016-09-28 | 菲力尔探测公司 | SiPM-BASED RADIATION DETECTION SYSTEMS AND METHODS |
| CN106298816A (en) * | 2016-10-11 | 2017-01-04 | 天津大学 | The single-photon avalanche diode of integrated cancellation resistance and manufacture method thereof |
| US9541448B2 (en) | 2015-02-06 | 2017-01-10 | General Electric Company | Silicon photomultipliers with digitized micro-cells having a first one-shot pulse and a second one-shot pulse provided by an electronic circuit |
| CN112133775A (en) * | 2020-09-04 | 2020-12-25 | 上海大学 | Cadmium zinc telluride/silicon gamma ray X-ray detector and preparation method thereof |
| CN115084295A (en) * | 2022-05-19 | 2022-09-20 | 苏州法夏科技有限公司 | Silicon photomultiplier structure applied to radiation and weak light detection and preparation method thereof |
| CN115274895A (en) * | 2022-06-16 | 2022-11-01 | 北京师范大学 | Silicon photomultiplier detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101248370A (en) * | 2005-08-26 | 2008-08-20 | 皇家飞利浦电子股份有限公司 | High resolution medical imaging detector |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| JP2011007693A (en) * | 2009-06-26 | 2011-01-13 | Toshiba Corp | Photomultiplier |
-
2011
- 2011-04-08 CN CN2011100878116A patent/CN102735350A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101248370A (en) * | 2005-08-26 | 2008-08-20 | 皇家飞利浦电子股份有限公司 | High resolution medical imaging detector |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| JP2011007693A (en) * | 2009-06-26 | 2011-01-13 | Toshiba Corp | Photomultiplier |
Non-Patent Citations (3)
| Title |
|---|
| 《核电子学与探测技术》 20101031 袁俊等 SiPM电子学模型的建立与参数提取 第1329-1333页 1-10 第30卷, 第10期 * |
| G.Q.ZHANG等: "Demonstration of a silicon photomultiplier with bulk integrated quenching resistors on epitaxial silicon", 《NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESERCH A》 * |
| 袁俊等: "SiPM电子学模型的建立与参数提取", 《核电子学与探测技术》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105980885A (en) * | 2013-11-26 | 2016-09-28 | 菲力尔探测公司 | SiPM-BASED RADIATION DETECTION SYSTEMS AND METHODS |
| CN105980885B (en) * | 2013-11-26 | 2018-11-02 | 菲力尔探测公司 | Radiation detection system based on SiPM and method |
| US9541448B2 (en) | 2015-02-06 | 2017-01-10 | General Electric Company | Silicon photomultipliers with digitized micro-cells having a first one-shot pulse and a second one-shot pulse provided by an electronic circuit |
| CN106298816A (en) * | 2016-10-11 | 2017-01-04 | 天津大学 | The single-photon avalanche diode of integrated cancellation resistance and manufacture method thereof |
| CN112133775A (en) * | 2020-09-04 | 2020-12-25 | 上海大学 | Cadmium zinc telluride/silicon gamma ray X-ray detector and preparation method thereof |
| CN115084295A (en) * | 2022-05-19 | 2022-09-20 | 苏州法夏科技有限公司 | Silicon photomultiplier structure applied to radiation and weak light detection and preparation method thereof |
| CN115274895A (en) * | 2022-06-16 | 2022-11-01 | 北京师范大学 | Silicon photomultiplier detector |
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Application publication date: 20121017 |