CN102731906A - Antistatic solder-ball bottle for solder balls - Google Patents
Antistatic solder-ball bottle for solder balls Download PDFInfo
- Publication number
- CN102731906A CN102731906A CN2012101713717A CN201210171371A CN102731906A CN 102731906 A CN102731906 A CN 102731906A CN 2012101713717 A CN2012101713717 A CN 2012101713717A CN 201210171371 A CN201210171371 A CN 201210171371A CN 102731906 A CN102731906 A CN 102731906A
- Authority
- CN
- China
- Prior art keywords
- solder
- antistatic
- hindered amine
- ball bottle
- solder ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides an antistatic solder-ball bottle for solder balls and relates to the technical field of plastic materials. A preparation method for the solder-ball bottle comprises a step of adding 17 to 19% of polyether hindered-amine into a PP material, a step of fusing the PP material and polyether hindered-amine to obtain a mixture and a step of carrying out injection molding on the mixture. The antistatic solder-ball bottle can improve photostability and conductivity of the PP material, realize an antistatic effect and allow solder balls not to adhere to each other, thereby improving the quality of integrated circuit chip packaging.
Description
Technical field
The present invention relates to the plastic material technical field, relate in particular to a kind of solder ball with antistatic tin pin.
Background technology
BGA, CSP are meant a kind of packaging process of IC chip; This is relevant with the chip encapsulation technology revolution; Be that current high-tech and, high reliability little, thin, light to end product are correlated with; At present all in other words digital cameras, video camera, notebook computer, mobile phone, automotive electronics, automobile satellite navigation appearance etc. are all visitd the merit of BGA technology. and the maximum chip pin in the world can reach 2600 at most at present; Spacing according to electric principle metal pins must have a suitable spacing, and too small spacing can cause short circuit, therefore will certainly cause the big, heavy, thick of end product by the too much pin requirement of traditional technology; And BGA, CSP technology are solve this technology at present unique, and the BGA solder ball is one of encapsulation main raw that applies to BGA, CSP technology.
The inland of China is about 88,000,000,000/month (88KKK) tin ball output in 2006, and prediction to the tin ball output of inland of China in 2008 will account for about 35% of worldwide production total amount, on manufacturing technology, has dwindled the gap with the state of the art of Japan and the United States.
Report according to another China Electronics News; Various countries make an investment in the encapsulation of chip and continue to strengthen; Especially to the investment of BGA and CSP packaging process; Simultaneously packaged material shifts to China from Japanese, Taiwan with manufacturers, can reach a conclusion thus, the demand of BGA tin ball can be along with investment orientation to its demand of transfer of China with in rising trend.
The solder ball packing instructions are high; Solder ball not only will keep dry in storage, transportation, use, and what is more important will guarantee not influenced by electrostatic, because sphere diameter has plurality of specifications from 0.889mm-0.080mm; In a single day solder ball experiences static; Solder ball will be with static and stick together, and finally directly has influence on the quality of IC chip encapsulation, causes scrapping of IC chip.
The tin pin is antistatic to mainly contain several kinds of modes at present:
Antistatic mode one: in the PP material, add a certain proportion of metal-powder or sooty mode, reach anlistatig effect; Use the anlistatig defective of this mode to be, the material produce complex process is because the density of PP material has only 0.89-0.91g/cm
3, and the density of metal-powder is at 2.7 g/cm
3More than or sooty density be 1.75-1.82 g/cm
3, the material that unlike material, density differ more than a times or a times is difficult to merge fully, so mixture homogeneity is relatively poor, and injection temperature also will improve, and has improved other physicalies that injection temperature can reduce the PP bottle.
Antistatic mode two: the bottle inwall in the PP material is coated with the liquid antistatic mode, reaches anlistatig effect; Its shortcoming is to be not easy to guarantee that the inside of bottle all applies evenly, and owing to be the surface that is coated in the bottle inwall, but and the coating property of PP is not so good, therefore, unendurable remaining valid property.
Summary of the invention
The purpose of this invention is to provide a kind of solder ball with antistatic tin pin, it can improve light stability, the conductivity of PP material, reaches anlistatig effect, and solder ball is not sticked together, thereby has improved the quality of IC chip encapsulation.
In order to solve the existing problem of background technology, the present invention adopts following technical scheme: its preparation method is: in the PP material, add the polyethers hindered amine of 17%-19%, PP material and polyethers hindered amine are fused into mixtinite, again with the mixtinite injection moulding.
The density of described polyethers hindered amine is 0.87-0.89g/cm
3
The present invention selects the macromolecular material approaching with the PP material for use, because of the density of polyethers hindered amine is 0.87-0.89g/cm
3, with the density 0.89-0.91g/cm of PP material
3Basically approaching; And the polyethers hindered amine is a kind of smooth stable material; Favorable compatibility and synergy are arranged again, still are a kind of favorable conductive induced material simultaneously, after polyethers hindered amine and the fusion of PP material; To increase the conductivity of PP material through inducing of polyethers hindered amine, reach antistatic effect.
The present invention can improve light stability, the conductivity of PP material, reaches anlistatig effect, and solder ball is not sticked together, thereby has improved the quality of IC chip encapsulation.
Embodiment:
This embodiment adopts following technical scheme: its preparation method is: in the PP material, add the polyethers hindered amine of 17%-19%, PP material and polyethers hindered amine are fused into mixtinite, again with the mixtinite injection moulding.
The density of described polyethers hindered amine is 0.87-0.89g/cm
3
This embodiment is selected the macromolecular material approaching with the PP material for use, because of the density of polyethers hindered amine is 0.87-0.89g/cm
3, with the density 0.89-0.91g/cm of PP material
3Basically approaching; And the polyethers hindered amine is a kind of smooth stable material; Favorable compatibility and synergy are arranged again, still are a kind of favorable conductive induced material simultaneously, after polyethers hindered amine and the fusion of PP material; To increase the conductivity of PP material through inducing of polyethers hindered amine, reach antistatic effect.
This embodiment can improve light stability, the conductivity of PP material, reaches anlistatig effect, and solder ball is not sticked together, thereby has improved the quality of IC chip encapsulation.
Claims (2)
1. solder ball is characterized in that with antistatic tin pin its preparation method is: in the PP material, add the polyethers hindered amine of 17%-19%, PP material and polyethers hindered amine are fused into mixtinite, again with the mixtinite injection moulding.
2. solder ball according to claim 1 is with antistatic tin pin, and the density that it is characterized in that described polyethers hindered amine is 0.87-0.89g/cm
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101713717A CN102731906A (en) | 2012-05-30 | 2012-05-30 | Antistatic solder-ball bottle for solder balls |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101713717A CN102731906A (en) | 2012-05-30 | 2012-05-30 | Antistatic solder-ball bottle for solder balls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102731906A true CN102731906A (en) | 2012-10-17 |
Family
ID=46988255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101713717A Pending CN102731906A (en) | 2012-05-30 | 2012-05-30 | Antistatic solder-ball bottle for solder balls |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102731906A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101323776A (en) * | 2007-06-14 | 2008-12-17 | 熊小勇 | Antistatic master batch for high latitude low wet area and manufacturing method thereof |
| TWM404838U (en) * | 2010-12-10 | 2011-06-01 | Accurus Scient Co Ltd | Electronic part storage box |
| CN102245482A (en) * | 2008-12-01 | 2011-11-16 | 千住金属工业株式会社 | Package for storing minute solder ball and method for storing minute solder ball |
-
2012
- 2012-05-30 CN CN2012101713717A patent/CN102731906A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101323776A (en) * | 2007-06-14 | 2008-12-17 | 熊小勇 | Antistatic master batch for high latitude low wet area and manufacturing method thereof |
| CN102245482A (en) * | 2008-12-01 | 2011-11-16 | 千住金属工业株式会社 | Package for storing minute solder ball and method for storing minute solder ball |
| TWM404838U (en) * | 2010-12-10 | 2011-06-01 | Accurus Scient Co Ltd | Electronic part storage box |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104335336B (en) | Chip bonding device and chip bonding method | |
| TWI666259B (en) | Epoxy resin composition, semiconductor sealant, and semiconductor device | |
| CN102254586B (en) | Low-temperature cured conductive silver paste and preparation method and use thereof | |
| CN101941042B (en) | Easily collapsed coated sand | |
| CN111560232B (en) | Single-component epoxy resin flowing type underfill adhesive and preparation method thereof | |
| CN105679622A (en) | Quartz sand fuse and fabrication method thereof | |
| CN104140717A (en) | High-solid content jet-printing conductive ink | |
| CN107301887A (en) | A kind of silver-colored conductive silver paste composition of the novel solar battery back of the body and preparation method | |
| TWI710071B (en) | Packaging substrate and manufacturing method of packaging substrate | |
| CN102731906A (en) | Antistatic solder-ball bottle for solder balls | |
| CN102585744B (en) | Adhesive composition and preparation method and application thereof in silk-screen printing | |
| WO2017034589A1 (en) | Multi-die package | |
| JP5086945B2 (en) | Manufacturing method of semiconductor device | |
| CN206743385U (en) | Camera module | |
| CN106024359B (en) | A kind of production method for being molded inductance | |
| CN203606544U (en) | Optical lens encapsulation structure | |
| CN115975569A (en) | Packaging adhesive for system-in-package and preparation method thereof | |
| TWI606466B (en) | Nuclear layer technology anisotropic conductive film | |
| CN102790016B (en) | Bump structure and producing process thereof | |
| JP2010127974A5 (en) | ||
| CN102617982B (en) | Carbon nanotube/nylon fiber modified epoxy resin composite material | |
| CN205542777U (en) | High -efficient antistatic LED | |
| CN102646605A (en) | Method for reforming solder ball | |
| CN205016520U (en) | Modular elasticity pin structure and use its POP packaging structure | |
| CN103513387A (en) | Method for manufacturing optical lens module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121017 |