CN102723398A

CN102723398A - Method for removing phosphorosilicate glass from monocrystalline silicon wafer in monocrystalline silicon battery production

Info

Publication number: CN102723398A
Application number: CN2011100773909A
Authority: CN
Inventors: 刘万学; 刘志坚; 程明辉; 吴帅; 杨帅; 韩丽
Original assignee: Jilin Qingda New Energy Electric Power Co Ltd
Current assignee: Jilin Qingda New Energy Electric Power Co Ltd
Priority date: 2011-03-30
Filing date: 2011-03-30
Publication date: 2012-10-10

Abstract

The invention relates to the solar battery production field and concretely relates to a method for removing phosphorosilicate glass from a monocrystalline silicon wafer in monocrystalline silicon battery production. According to the method, an HF acid (electronic grade) solution with certain concentration is controlled to react with the phosphorosilicate glass generated after diffusion to remove a phosphorus-containing SiO2 layer, peel off surface impurities and effectively generate passivation. Meanwhile, excessive corrosion of the HF acid is easily controlled, no damage to the Si-Si bond of the silicon wafer is caused, and the occurrence of defective wafers such as wafers with white lines caused by composition during PECVD film forming process is prevented.

Description

During producing, removes a kind of monocrystalline silicon battery the method for phosphorosilicate glass on the monocrystalline silicon piece

Technical field

The present invention relates to the manufacture of solar cells field, remove the method for phosphorosilicate glass on the monocrystalline silicon piece during a kind of specifically monocrystalline silicon battery is produced.

Background technology

China pays much attention to the research and development of solar cell, and as far back as during the Seventh Five-Year Plan period, national key subjects have been listed in the research work of amorphous silicon semiconductor in; 85 and during the State's Ninth Five-Year Plan period, China focuses on aspect such as solar energy in large area battery to research and development.In October, 2003; National Development and Reform Committee, the Department of Science and Technology make the development plan of the five-year solar energy resources; Committee of Development and Reform's " bright engineering " 10,000,000,000 yuan of application that are used to advance solar energy generation technology of will raising funds are planned national solar power system total installation of generating capacity in 2015 and are reached 300 megawatts.China has become the maximum manufacturing nation of global photovoltaic product, and China is about to " the new forms of energy development planning " of appearance, and the installed capacity of China's photovoltaic generation is planned to the year two thousand twenty and reaches 20GW, is more than 10 times of original " regenerative resource medium-term and long-term plans " middle 1.8GW.

The application of solar cell gets into departments such as industry, commerce, agricultural, communication, household electrical appliance and public utility from military field, space industry; Especially can be dispersedly in the outlying district, high mountain, desert, island and rural area use, to save the very expensive transmission line of cost.

At present; Because different manufacturers is used different diffusion technology technology when the produce single crystal silicon chip; So cause one deck phosphorosilicate glass that monocrystalline silicon sheet surface forms in different diffusion technologys to have different othernesses, cause the generation that can produce the defective sheets such as white line of different probabilities behind the PECVD plated film, influence the quality of product; Increase is in the amount of doing over again of PECVD operation, and what influence was produced normally carries out.

Summary of the invention

The objective of the invention is in order to solve the deficiency of above-mentioned prior art; Provide a kind of monocrystaline silicon solar cell sheet production to remove a kind of method of phosphorosilicate glass; Use this method and not only can effectively remove the phosphorosilicate glass that produces because of different diffusion technologys; But also can guarantee to carry out avoiding producing defectives such as white line in the coating process in the PECVD operation, can effectively control product quality.

The objective of the invention is to realize like this; Be to add 130-140 liters of deionized waters in 150-160 process of jacking grooves at volume at first, temperature is controlled between 18-23 ℃, once adds 16 liters of the electron level HF acid of concentration 48% ~ 49%; Evenly stir with the long rod of PP material, it is subsequent use to obtain cleaning fluid; Then specification is put into Carrier box for the 125*125 monocrystalline silicon piece; A plurality of Carrier boxs are packed in the Da Hua basket as one batch successively; The quantity that requires each batch monocrystalline silicon piece is between 300-400; The Da Hua indigo plant that monocrystalline silicon piece will be housed is at last put into the technology groove of being furnished with cleaning fluid, soaks 100 ~ 120 seconds, and cleaning fluid subsequent use in the above-mentioned technology groove can be produced 40 ~ 50 batches continuously.

Advantage of the present invention is:

1, the present invention with the phosphorosilicate glass reaction that the diffusion back produces, removes phosphorous SiO through the certain density HF acid of control (electron level) solution ₂Layer is peeled off surface impurity, effectively produces passivation.Simultaneously easily the excessive corrosion of control HF acid is not destroyed silicon chip Si-Si key, has avoided producing in the PECVD film forming procedure compound and the generation of defective sheets such as white line occurs.

2, the inventive method in process of production can fluid infusion and other parameter adjustments, can produce a plurality of batches continuously.

Embodiment

Embodiment 1

At volume is to add 130 liters of deionized waters in the 150 process of jacking grooves, and temperature is controlled at 18 ℃, once adds 16 liters of HF acid (electron level, concentration 48% ~ 49%), evenly stirs with the long rod of PP material, and it is subsequent use to obtain cleaning fluid; Then specification is put into Carrier box for the 125*125 monocrystalline silicon piece; A plurality of Carrier boxs are packed in the Da Hua basket as one batch successively; The quantity that requires each batch monocrystalline silicon piece is at 300; The Da Hua indigo plant that monocrystalline silicon piece will be housed is at last put into the technology groove of being furnished with cleaning fluid, soaks 100 seconds, and cleaning fluid subsequent use in the above-mentioned technology groove can be produced 40 batches continuously.

Embodiment 2

At volume is to add 135 liters of deionized waters in the 155 process of jacking grooves, and temperature is controlled at 20 ℃, once adds 16 liters of HF acid (electron level, concentration 48% ~ 49%), evenly stirs with the long rod of PP material, and it is subsequent use to obtain cleaning fluid; Then specification is put into Carrier box for the 125*125 monocrystalline silicon piece; A plurality of Carrier boxs are packed in the Da Hua basket as one batch successively; The quantity that requires each batch monocrystalline silicon piece is at 400; The Da Hua indigo plant that monocrystalline silicon piece will be housed is at last put into the technology groove of being furnished with cleaning fluid, soaks 110 seconds, and cleaning fluid subsequent use in the above-mentioned technology groove can be produced 45 batches continuously.

Embodiment 3

At volume is to add 140 liters of deionized waters in the 160 process of jacking grooves, and temperature is controlled at 23 ℃, once adds 16 liters of HF acid (electron level, concentration 48% ~ 49%), evenly stirs with the long rod of PP material, and it is subsequent use to obtain cleaning fluid; Then specification is put into Carrier box for the 125*125 monocrystalline silicon piece; A plurality of Carrier boxs are packed in the Da Hua basket as one batch successively; The quantity that requires each batch monocrystalline silicon piece is at 400; The Da Hua indigo plant that monocrystalline silicon piece will be housed is at last put into the technology groove of being furnished with cleaning fluid, soaks 120 seconds, and cleaning fluid subsequent use in the above-mentioned technology groove can be produced 50 batches continuously.

Claims

1. remove the method for phosphorosilicate glass on the monocrystalline silicon piece during a monocrystalline silicon battery is produced; It is characterized in that: this method may further comprise the steps: be to add 130-140 liters of deionized waters in 150-160 process of jacking grooves at volume at first; Temperature is controlled between 18-23 ℃; Once add 16 liters of the electron level HF acid of concentration 48% ~ 49%, with the evenly stirring of the long rod of PP material, it is subsequent use to obtain cleaning fluid; Then specification is put into Carrier box for the 125*125 monocrystalline silicon piece; A plurality of Carrier boxs are packed in the Da Hua basket as one batch successively; The quantity that requires each batch monocrystalline silicon piece is between 300-400; The Da Hua indigo plant that monocrystalline silicon piece will be housed is at last put into the technology groove of being furnished with cleaning fluid, soaks 100 ~ 120 seconds, and cleaning fluid subsequent use in the above-mentioned technology groove can be produced 40 ~ 50 batches continuously.