CN102722091B - Two-beam interference photoetching method and system - Google Patents
Two-beam interference photoetching method and system Download PDFInfo
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- CN102722091B CN102722091B CN201210229675.4A CN201210229675A CN102722091B CN 102722091 B CN102722091 B CN 102722091B CN 201210229675 A CN201210229675 A CN 201210229675A CN 102722091 B CN102722091 B CN 102722091B
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Abstract
The invention discloses a two-beam interference photoetching method and a two-beam interference photoetching system. The method comprises the following step of: realizing N times of interference exposure of two paths of beams on the surface of a processed workpiece, wherein the staggering value between two adjacent exposure positions is dI/N; N is more than or equal to 2; dI is the period of exposed light strength distribution; and the light field complex amplitude distribution after interference of the two paths of beams is a cosine function. According to the two-beam interference photoetching method disclosed by the invention, a big-width precision multi-step structure can be directly prepared on a photoresist, and the processing efficiency is high; and moreover, an adopted device is easy to obtain, and is low in cost.
Description
Technical field
The invention belongs to interference lithography field, relate in particular to a kind of two-beam interference photoetching method and system.
Background technology
Many ledge structures are a kind of typical case and basic three-dimensional structure, at numerous areas such as semiconductor, micro-optical device, MEMS (micro electro mechanical system) (MEMS) and flat pannel display, have widespread use.In these application scenarios, the requirement of step number, dimensional accuracy and the surfaceness of many ledge structures is all very low: step number is generally 2 to 4 steps, the accuracy requirement of bench height size is about several microns to several microns of zero points, and ledge surface roughness required about several microns of zero points.In job operation, can adopt the accomplished in many ways such as mask lithography and laser direct-writing.
But, for some special applications, such as optical device with show the phase fields such as vision, need many ledge structures of the high precision ultra-smooth of making, below binary optical device and interference modulations display device are described.
Binary optical device refers to have two and with the embossment structure of the degree of depth of topping bar, and forms pure phase position, coaxially reproduces, has a class diffraction optical element of high diffraction efficiency.Binary optical device is the emerging field in optical device, there is the unapproachable excellent performance of many traditional optical devices realizing in light wave conversion, comprise high-diffraction efficiency, unique dispersion, huge design freedom, broad material washability and special optical function.Meanwhile, binary optical device is also convenient to realize microminiaturization, the array and integrated of optical system.Step precision and the surfaceness of binary optical device, have a direct impact its output light field distribution, diffraction efficiency and signal to noise ratio (S/N ratio) tool.With typical 2 ledge structures, analyze: design wavelength is taken as 532 nanometers, Refractive Index of Material is got representative value 1.5, air refraction is 1.0, the ladder height of step is 532 nanometers, if permissible error is 10%, the scale error of bench height requires to be less than 53.2 nanometers, and visible requirement is very harsh.
Interference modulations display device.Interference modulations display technique IMOD (Interferometric modulator display) is a kind of novel display technique, display device based on this technology and display device do not need backlight, have significant low power capabilities, and can under wide in range light environment, use, even if under strong solar radiation, its display effect is clear Ruili still.The elementary cell of IMOD display device is the microstructure that two minute surfaces clip a space, and this space determines the color that light reflects while irradiating display.When the gauge in space equals a half of red light wavelength, the ruddiness reflecting by space upper and lower surface obtains to interfere and strengthens, and other color is attenuated, thereby makes the redness that demonstrates of this unit.Utilize identical principle, the method by photoetching is being made many ledge structures of wavelength magnitude, can realize colored without ink printing.Obviously, interference modulations display device is also to have very high requirement to the dimensional accuracy of many ledge structures and surfaceness.
Existing photoetching technique (comprising mask lithography, laser direct-writing and beamwriter lithography), only can make many ledge structures of micron and sub-micrometer scale, is difficult to realize step severity control and the surfaceness requirement of tens nanometer scale.Main cause is that these photoetching techniques are difficult to exposure light intensity to carry out so accurate control.Make a concrete analysis of as follows:
First analyze mask lithography.Mask lithography adopts mercury lamp and LED as light emitting source, and light source, after the devices such as collimated and microlens array carry out uniform illumination, is incident upon and on mask plate, carries out photoetching.Conventionally the light intensity uniformity parameter of mask plate upper surface is about 95% left and right, and in theory, if photoresist thickness is 2um, the step dimension Precision Theory numerical value that photoetching obtains is about 100nm, and under actual conditions, obtainable precision is lower.Because in the near field transmission process of light field after mask plate, the unevenness of light distribution sharply increases.In addition, because the luminophor of mercury lamp and LED is filament and fluorescent powder, small speckle and particle in its light field cannot thoroughly be improved by light balancing device, and therefore the surfaceness of exposure is difficult to reach near 20nm.In addition, mask lithography is as a kind of duplication process based on masterplate, and the dirigibility of its processing is poor.
Next analyzes laser direct-writing.First kind laser direct writing system, adopts LASER Light Source, spatial light modulator and imaging optical path.Shown in ginseng Fig. 1 a and Fig. 1 b, due to the limited aperture of its imaging optical path, the high-frequency information of its input light field is by filtering, and while causing its exposure to generate many ledge structures, the edge of step and end face all have ripple and fluctuating, and this phenomenon is called as optics Gibbs phenomenon.
According to information optics theoretical analysis, increase behind the aperture of optical system, the flatness of step only can obtain limited improvement, be embodied in, the ripple magnitude at step middle part reduces, ripple finer and closely woven (cycle diminishes), ripple distributes and to step edge, to shrink gradually, but the amplitude of ripple basicly stable total amplitude 10% near.Obviously, this is difficult to accept for accurate ledge structure.It is worth mentioning that, increase the aperture of optical system, mean the sharply increase of system cost.
If, the light source of system is changed into the incoherent lights such as mercury lamp and LED by laser, run into the same problem of mask lithography.In addition, now the steep property in the edge of step is poor, so the dutycycle of the obtainable ledge structure of photoetching is lower.
Another kind of laser direct writing system, adopts LASER Light Source, beam flying device (deflection device in other words) and focused light passages.Its output light field is single focus point, by the precision to focus point, evenly superposes, and can realize in theory the many ledge structures of above-mentioned precision.But its subject matter is simple scan processing mode, and working (machining) efficiency is very low, and the equipment cost of the precision optics scanning device that adopts is very high.
Finally, analytical electron bundle photoetching.The cost of electron-beam lithography system is very high, and working (machining) efficiency is extremely low.In addition, due to the singularity of the exposure principle of electron beam, its exposure technology is unfavorable for obtaining the smooth finish surface of minute surface level.
Because photoetching technique is difficult to directly make the many ledge structures of above-mentioned precision, at present, the main stream approach of the actual employing of industrial circle is that lithography process is in conjunction with the method for chemical etching.The method, by the method (comprising mask lithography and laser direct-writing) of photoetching, control the X-Y scheme shape of step, and pass through chemical etching method, reactive ion etching RIE(Reactive Ion Etching for example) the accurate degree of depth of controlling step, can obtain good surface smoothness simultaneously.The main deficiency of the method is: 1, two need repeatedly alignment to top bar, and technique is loaded down with trivial details; 2, the process time of chemical etching very long, efficiency is low; 3, chemical etching needs vacuum environment, and due to the volume restrictions of vacuum cavity, its processing breadth is very limited.
In a word, existing job operation cannot be made the many ledge structures of precision of large format directly, efficiently, at low cost.
Summary of the invention
The present invention proposes a kind of two-beam interference photoetching method and system, can on photoresist, directly prepare the many ledge structures of precision of large format, working (machining) efficiency is high, and cost is low, and the ledge surface of acquisition is smooth.
To achieve these goals, the technical scheme that the application provides is as follows:
A two-beam interference photoetching method, wherein, two-way light beam is realized N time and is interfered exposure on processing work surface, and the dislocation value between adjacent double exposure position is d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure, the light field COMPLEX AMPLITUDE after described two-way beam interference is cosine function.
Correspondingly, the application also provides a kind of two-beam interference etching system, comprising:
LASER Light Source;
Beam-expanding collimation optical element, becomes directional light by the laser beam datum from LASER Light Source;
Optics template, in order to control the size and shape of exposure area;
Beam splitter, carries out light splitting to laser beam;
Projection optics mirror group, receives the laser beam after described light splitting and is converged to processing work surface and realize interference exposure, and the light field COMPLEX AMPLITUDE after interference is cosine function;
Wedge shape phase board, the dislocation value of controlling between adjacent double exposure position is d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure.
As a further improvement on the present invention, described optics template is mask or spatial light modulator.
As a further improvement on the present invention, described beam splitter comprises phase grating.
As a further improvement on the present invention, described phase grating suppresses 0 grade of light beam.
As a further improvement on the present invention, described beam splitter also comprises diaphragm, and described diaphragm blocks 0 grade of light beam from described phase grating.
As a further improvement on the present invention, described projection optics mirror group comprises the first projection optics mirror group and the second projection optics mirror group, described wedge shape phase board is between described the first projection optics mirror group and the second projection optics mirror group, and described wedge shape phase board is positioned in the light path of one of described two-way light beam.
As a further improvement on the present invention, described two-beam interference system also comprises Piezoelectric Ceramic device, and described wedge shape phase board is driven by this Piezoelectric Ceramic device.
Compared with prior art, the present invention adopts optics template projection-phase grating spectral interference light path.Phase grating carries out beam splitting by input directional light, and multiple beam, through projection optical system, exposes on photoresist.Interfere the COMPLEX AMPLITUDE of the rear light field of exposure close to desirable cosine function, the impact that is subject to optical system finite aperture is very little.Contraposition by multiexposure, multiple exposure superposes, and the total exposure intensity on photoresist is that flat-top distributes, and the ripple of total light intensity can be controlled in below 1%, thereby can obtain accurate ledge structure.In the depth dimensions precision of step and the roughness of ledge surface, be obviously better than existing method.By two-beam interference photoetching method of the present invention, can on photoresist, directly prepare the many ledge structures of precision of large format, working (machining) efficiency is high, and the components and parts that adopt easily obtain, and cost is low.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 a is depicted as the optical field distribution figure inputting in first kind laser direct writing system spatial light modulator in prior art;
Fig. 1 b is depicted as in prior art in the first kind laser direct writing system optical field distribution figure for the actual output of photoetching;
Figure 2 shows that the schematic diagram of two-beam interference etching system in first embodiment of the invention;
Figure 3 shows that the surface of intensity distribution of the double exposure of first embodiment of the invention two-beam interference etching system;
Figure 4 shows that the schematic diagram of two-beam interference etching system in second embodiment of the invention.
Embodiment
The present invention proposes a kind of job operation based on interference lithography and multiexposure, multiple exposure stack, its basic thought is to utilize interference lithography to obtain the light distribution that approaches desirable cosine type, then by multiexposure, multiple exposure, make the light intensity staggered superposition of cosine type, thereby making total light distribution is a horizontal linear, thus the ledge structure of acquisition flat-top.
In order to achieve the above object, the embodiment of the invention discloses a kind of two-beam interference photoetching method, two-way light beam is realized N time and is interfered exposure on processing work surface, and the dislocation value between adjacent double exposure position is d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure, the light field COMPLEX AMPLITUDE after described two-way beam interference is cosine function.
Correspondingly, the invention also discloses a kind of two-beam interference etching system, comprising:
LASER Light Source;
Beam-expanding collimation optical element, becomes directional light by the laser beam datum from LASER Light Source;
Optics template, in order to control the size and shape of exposure area;
Beam splitter, carries out light splitting to laser beam;
Projection optics mirror group, receives the laser beam after described light splitting and is gathered processing work surface and realize interference exposure, and the light field COMPLEX AMPLITUDE after interference is cosine function;
Wedge shape phase board, the dislocation value of controlling between adjacent double exposure position is d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure.
Two-beam interference photoetching method of the present invention and system can directly be prepared the many ledge structures of precision of large format on photoresist, and working (machining) efficiency is high, and cost is low, and the ledge surface of acquisition is smooth.
In order to make those skilled in the art person understand better the technical scheme in the application, below in conjunction with the accompanying drawing in the embodiment of the present application, technical scheme in the embodiment of the present application is clearly and completely described, obviously, described embodiment is only the application's part embodiment, rather than whole embodiment.Embodiment based in the application, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all should belong to the scope of the application's protection.
Figure 2 shows that the schematic diagram of two-beam interference etching system in first embodiment of the invention.
Shown in ginseng Fig. 2, two-beam interference etching system 10 comprises LASER Light Source (not shown), beam-expanding collimation optical element (not shown), optics template 11, beam splitter 12, projection optics mirror group 13 and wedge shape phase board 14.
Adopt laser as light source, its advantage is that laser has good coherence, is suitable for carrying out interference lithography.In addition, compare ordinary light source, laser has good light field homogeneity.
Beam-expanding collimation optical element, in order to become directional light by the laser beam datum from LASER Light Source.
Adopt 121 pairs of laser beam of phase grating to carry out light splitting, be easy to realize and stablize controlled interference lithography.Advantage one, can guarantee that two-way light+1 grade that participates in interfering strictly equates with the energy of-1 grade of light beam, and initial phase is identical, thereby can guarantee to obtain the light distribution of desirable cos profile; Advantage two, very low to coherence's requirement of LASER Light Source, go for multiple laser type.
Phase grating 121, the preferred bigger numerical of its spatial frequency, for example 300 lines right/millimeter more than.The inferior light beam of a plurality of levels after light splitting is difficult for mutual aliasing like this, and each level time output beam grazing is better, thereby makes after projection optical system, finally can enough obtain and approach the distribution of interference intensity that desirable cos distributes at finished surface.But the spatial frequency of phase grating 121 also should not be too large, otherwise the cycle of interference fringe corresponding reducing, the accuracy requirement of multiexposure, multiple exposure staggered superposition is improved.
Projection optics mirror group 13, also gathers this two light beams processing work 15 surfaces in order to+1 grade of reception and-1 grade of light beam and realizes interference exposure.Projection optics mirror group 13 comprises the first projection optics mirror group 131 and the second projection optics mirror group 132, and laser beam is realized and interfered exposure on processing work 15 surfaces respectively after the first projection optics mirror group 131 and the second projection optics mirror group 132.Diaphragm 122, between the first projection optics mirror group 131 and the second projection optics mirror group 132, and is positioned in the light path of 0 grade of light beam.
Wedge shape phase board 14, is used for realizing high-speed, high precision exposure staggered superposition.The intersection point place of its be positioned at+1 grade of light path (or-1 grade of light path) and the second projection optics mirror group 132 front focal planes.Mobile wedge shape phase board 14, can change the initial bit phase of '+1 ' grade of light path, thereby the interference fringe on processing work 15 is moved along horizontal direction, and then realizes the staggered superposition of multiexposure, multiple exposure.Wedge shape phase board 14 can directly be driven by Piezoelectric Ceramic device.
This phase board move mode, compares platform movement mode with the obvious advantage.Wedge shape phase board 14 is compared platform, and quality is light, thereby corresponding fast, and positioning precision is high.Moreover wedge structure has the effect of amplifying how much, can, by the movement of microcosmic magnitude, be enlarged into the movement of macroscopical magnitude, thereby positioning precision significantly improve.
The mode of the exposure stack of two-beam interference etching system 10, can based on classics+1 ' grade and ' 1 ' grade of two-beam interference realization, concrete methods of realizing is as follows:
1, adopt typical two-beam interference light path, the light field COMPLEX AMPLITUDE of exposure is classical cos function, can be designated as:
Light distribution is COMPLEX AMPLITUDE square:
2, in order to obtain the light distribution of flat-top, exposure that need to be to two-beam interference, repeatedly superposes, and concrete mode is:
1, adopt+1 grade and-1 grade of two-beam interference exposure;
2, exposure stacking fold is N time, N >=2;
3, the dislocation value of each exposure position is d
i/ N.Here, d
ifor cycle of light distribution of exposure light field.
In most preferred embodiment, adopt double exposure, i.e. N=2,, d
i/ 2 staggered superposition.Total light intensity of double exposure stack can be expressed as:
Known according to the expression formula of I, finally obtained flat-top lithographic results.
Shown in ginseng Fig. 3, fine line I
1with fine dotted line I
2for the successively light distribution of double exposure, heavy line I is the total light distribution after superposeing.
Utilize above-mentioned two-beam interference etching system 10 to control the height of step, need to control the different exposure dose of realizing of each exposure area, here exposure dose=exposure light intensity * time shutter.Specifically can there be two kinds of implementations:
One, control exposure frequency and realize multistage exposure dose
This processing mode, for different bench heights, adopts different exposure frequencies.Step is higher, and exposure frequency is more.In the situation that step number is not many, as 2 step ~ 4 steps, can adopt the mode of minute layer photoetching to realize.Take two steps as example, specifically describe in detail:
Two ledge structures, are divided into two layer photoetchings.Ground floor, photoetching completes the exposure of the first half of a step cutting pattern and two step cutting patterns.The second layer, photoetching completes the exposure of the later half of two step cutting patterns.In photoetching in every one deck, be all the isodose exposure of monopulse, thereby can adopt flight exposure (lining by line scan), thereby can obtain high operational efficiency and positioning precision.As previously mentioned, the photoetching of every one deck here, is not once to complete, and be divided into N time and carry out.
Control exposure frequency and specifically also comprise two kinds of implementation methods:
1, control the multiplicity of exposure cycle.
2, control the size of N in each exposure cycle.
So-called exposure cycle refers to, by the limited number of time of interference exposure is superposeed, to obtain the process of flat-top light intensity.Particularly: in each exposure cycle, comprise N time and interfere exposure, the dislocation value between adjacent double exposure is d
i/ N, wherein, N>=2, d
ifor cycle of light distribution of exposure light field, the dislocation value between adjacent exposure cycle is 0.
Two, control the time shutter and realize multistage exposure dose
This processing mode, for different bench heights, adopts the different time shutter.Step is higher, and the time shutter is longer.
In actual light carving technology, it is noted that the photoetching degree of depth of photoresist and exposure dose are not strict linear relationships.According to the response curve of typical photoresist, can find out, very little and when very large at exposure dose, the linearity is the poorest; And in medium exposure dose interval, the linearity is good.In actual process, need to select suitable exposure dose according to the response curve of adopted photoresist, to obtain maximum linear response.
Photoresist non-linear corresponding, negligible on the impact of the flatness of step, but the relative ladder height of many steps is had to impact.If desired, can, according to the response curve of photoresist, carry out the precorrection of exposure dose.
Figure 4 shows that the schematic diagram of two-beam interference etching system in second embodiment of the invention.
Shown in ginseng Fig. 4, in two-beam interference etching system 20, beam splitter 22 can directly curb 0 grade of light beam by the optimal design of grooved, therefore without diaphragm is set.
Other structures of two-beam interference etching system 20 are identical with the first embodiment with principle, repeat no more.
In sum, the present invention adopts optics template projection phase grating spectral interference light path.Phase grating carries out beam splitting by input directional light, multiple beam is through projection optical system, on photoresist, expose, interfering the COMPLEX AMPLITUDE of the rear light field of exposure is cosine function, contraposition by multiexposure, multiple exposure superposes, and the total exposure intensity on photoresist is that flat-top distributes, thereby can obtain accurate ledge structure, in the depth dimensions precision of step and the roughness of ledge surface, be obviously better than existing method.By two-beam interference photoetching method of the present invention, can on photoresist, directly prepare the many ledge structures of precision of large format, working (machining) efficiency is high, and the components and parts that adopt easily obtain, and cost is low.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limiting related claim.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should make instructions as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (8)
1. a two-beam interference photoetching method, it is characterized in that, two-way light beam is realized N time and is interfered exposure on processing work surface, arbitrary light path of two-way light beam is provided with a wedge shape phase board, by mobile wedge shape phase board, change the initial bit phase of its place light path, thereby the interference fringe on processing work is moved along horizontal direction, realize the staggered superposition of multiexposure, multiple exposure, and to make the dislocation value between adjacent double exposure position be d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure, the light field COMPLEX AMPLITUDE after described two-way beam interference is cosine function, and multiexposure, multiple exposure makes the light intensity staggered superposition of cosine type, and making total light distribution is a horizontal linear, obtains the ledge structure of flat-top.
2. application rights requires a system for two-beam interference photoetching method described in 1, it is characterized in that, comprising:
LASER Light Source;
Beam-expanding collimation optical element, becomes directional light by the laser beam datum from LASER Light Source;
Optics template, in order to control the size and shape of exposure area;
Beam splitter, carries out light splitting to laser beam;
Projection optics mirror group, receives the laser beam after described light splitting and is converged to processing work surface and realize interference exposure, and the light field COMPLEX AMPLITUDE after interference is cosine function;
Wedge shape phase board, the dislocation value of controlling between adjacent double exposure position is d
i/ N, wherein, N>=2, d
ifor the cycle of the light distribution after exposure.
3. the system of two-beam interference photoetching method according to claim 2, is characterized in that, described optics template is mask or spatial light modulator.
4. the system of two-beam interference photoetching method according to claim 2, is characterized in that, described beam splitter comprises phase grating.
5. the system of two-beam interference photoetching method according to claim 4, is characterized in that, described phase grating suppresses 0 grade of light beam.
6. the system of two-beam interference photoetching method according to claim 4, is characterized in that, described beam splitter also comprises diaphragm, and described diaphragm blocks 0 grade of light beam from described phase grating.
7. the system of two-beam interference photoetching method according to claim 2, it is characterized in that, described projection optics mirror group comprises the first projection optics mirror group and the second projection optics mirror group, described wedge shape phase board is between described the first projection optics mirror group and the second projection optics mirror group, and described wedge shape phase board is positioned in the light path of one of described two-way light beam.
8. the system of two-beam interference photoetching method according to claim 2, is characterized in that, the system of described two-beam interference photoetching method also comprises Piezoelectric Ceramic device, and described wedge shape phase board is driven by this Piezoelectric Ceramic device.
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| CN103424794B (en) * | 2013-09-03 | 2016-01-20 | 苏州大学 | A kind of transmission-type spectro-grating and interference lithography system |
| CN106451063B (en) * | 2016-11-15 | 2019-02-26 | 北京工业大学 | The production method of distributed feedback polymer laser based on beat frequency structure |
| CN110346857A (en) * | 2019-07-15 | 2019-10-18 | 英诺激光科技股份有限公司 | Utilize the method for multi beam ultrafast laser production diffraction optical device |
| CN112731776B (en) * | 2021-01-14 | 2023-06-20 | 之江实验室 | Double-mask high-flux laser super-resolution laser direct writing method and device |
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