CN102706276B - Planar periodic structure measurement device and measurement method - Google Patents
Planar periodic structure measurement device and measurement method Download PDFInfo
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- CN102706276B CN102706276B CN201210168132.6A CN201210168132A CN102706276B CN 102706276 B CN102706276 B CN 102706276B CN 201210168132 A CN201210168132 A CN 201210168132A CN 102706276 B CN102706276 B CN 102706276B
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Abstract
The invention discloses a planar periodic structure measurement device and a measurement method. The device comprises a laser, a sample bracket, a horizontal tray, a rotary table, a freely rotating round disc, and a beam angle measurement element, wherein the sample bracket is fixed on the top of the horizontal tray; the bottom of the horizontal tray is connected with the rotary table; the rotary table is used for changing the direction and position of the horizontal tray; the circumference of the upper edge of the upper surface of the rotary table is graduated with angle scales; the freely rotating round disc is coaxially connected with the rotary table; and the beam angle measurement element is fixed on the freely rotating round disc. The planar periodic structure measurement device provided by the invention has the advantages that the laser beam generated by the laser is incident to the to-be-measured surface of a sample, and the included angle between the diffracting beam and the normal line of the to-be-measured surface of the sample is measured by the beam angle measurement element, so that the periodic size of the sample can be calculated according to the included angle, thereby realizing high measurement accuracy and quick measurement. Additionally, the device is simple in structure and low in cost by only using the laser and the beam angle measurement element.
Description
Technical field
The present invention relates to a kind of measuring technique of periodic structure, especially relate to a kind of measurement mechanism and measuring method of plan periodic structure.
Background technology
Modern material the reach of science depends on the understanding to material property and other constituent structure and pattern membership credentials to a great extent.Therefore, the various measuring technologies to material property and to material the characterization technique on microcosmic level, formed an important component part of material science.This makes material analysis become the important research means of material science, is widely used in research and solves materials theory and engineering problem.The basic skills of the sign of general material structure comprises: chemical composition analysis, structure determination, morphology observation etc.
And at present, along with the fast development of the micro-manufacture of optics, process technology, design and the optoelectronic device of preparing all kinds of sub-micron, nano-scale becomes an important directions of current laboratory study and production application.Due to the many related physical performances that decide a device by type physical arrangement, pattern of general photonic device, thereby now morphology observation technology becomes an important technical of characterizing device pattern.Especially, since the Miller in U.S. Bell laboratory in 1969 proposes the concept of " integrated optics " first, and the opportunity providing is provided in optical fiber communication, makes people develop a series of high-performance integrated photonic device for optical communication and sensing.And, since Eli Yablonovitch in 1987 and Sajeev John propose the concept of photonic crystal (PCs) respectively first, it is more and more widely used in design and the application of all kinds of Novel photonic devices, and photonic crystal has by the dielectric constant of artificial Design and manufacture the structure that some cycles distributes as a class, because it can be realized without excellent properties such as tunnelling ray loss transmission, therefore High Density Integration is had to very important meaning.
Generally, this class submicron periodic structure of similar photonic crystal has been widely used in the devices such as broad band pass filter, sub-wave length grating, photonic crystal fiber.At present, the method of measuring submicron periodic structure adopts scanning electron microscope (SEM mostly, Scanning Electron Microscope), atomic force microscope (AFM, Atomic ForceMicroscope), the equipment such as step instrument carries out direct morphology characterization, but sometimes often need the simple structures such as the cycle size of the sample of quick, easy, economic test system for general sub-micron periodic optical grating, plan periodic structure etc., and generally such as scanning electron microscope, first expensive, use (test) cost high; Second complex operation, testing process numerous and diverse, need special messenger's operational testing, use inconvenience, three cycle sizes that sometimes only need record structure are with for referencial use, might not need to check complete morphology characterization, bring inconvenience therefore not only to actual operational applications, and easily cause unnecessary waste.On the other hand, because sub-micron (hundreds of nanometer) periodic structure is near general visible wavelength, therefore general optical grating diffraction theory is inapplicable.Therefore, need a kind of simple and easy, experimental technique of testing fast multiple plan periodic structure of research badly.
Summary of the invention
Technical matters to be solved by this invention be to provide a kind of simple in structure, cost is low, the measurement mechanism of easy to operate plan periodic structure fast and measuring method.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of measurement mechanism of plan periodic structure, it is characterized in that comprising laser instrument, specimen holder, level tray, universal stage, rotate freely disk and beam angle measuring sensor, the laser that described laser instrument sends incides on the surface to be measured that is placed in the sample on described specimen holder, described specimen holder is fixed on the top of described level tray, the bottom of described level tray is provided with initial position for adjusting described level tray and makes the vernier adjustment knob that laser that described laser instrument sends is vertical with the surface to be measured of described sample, the bottom of described level tray is connected with described universal stage, described universal stage is for changing the orientation of described level tray, on the upper surface of described universal stage, be provided with alidade along circumference, the precision of the angle index of described alidade is " 1 ' ", the described disk that rotates freely is coaxially connected with described universal stage, described beam angle measuring sensor is fixed on described rotating freely on disk, described beam angle measuring sensor is for measuring the angle of normal to a surface to be measured of diffracted beam and described sample.
Described laser instrument adopts the He-Ne laser instrument that wavelength is 632.8nm.
Described beam angle measuring sensor comprises a steel cylinder, and the centre mark of an end face of described steel cylinder has crosshair, and this end face is near described specimen holder.
A measuring method of applying above-mentioned measurement mechanism measurement plane periodic structure, is characterized in that comprising the following steps:
1. open laser instrument, and make its preheating about 20 minutes;
2. sample is fixed on specimen holder, then utilizes the vernier adjustment knob of the bottom that is arranged at level tray to adjust the initial position of level tray, the laser that energizer is sent is vertical with the surface to be measured of sample;
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, make the central spot of laser, the central point that is placed in the sample on specimen holder and beam angle measuring sensor that laser instrument sends in same level;
4. the bottom of level tray is fixedly connected with universal stage, then rotates universal stage and change the orientation of level tray, suppose that the incident angle that laser that now laser instrument sends incides the surface to be measured of sample is θ;
5. rotary beam measurement of angle element, Shi Qi center is just to diffracted beam, the angle of the normal to a surface to be measured of diffracted beam and sample when measuring incident angle that laser that laser instrument sends incides the surface to be measured of sample and being θ
6. according to the angle of the normal to a surface to be measured of diffracted beam and sample
extrapolate the cycle size of sample.
Compared with prior art, the invention has the advantages that:
1) apparatus of the present invention utilize the laser that laser instrument is sent to incide on the surface to be measured of the sample being placed on specimen holder, then measure the angle of the normal to a surface to be measured of diffracted beam and sample by being fixed on the beam angle measuring sensor rotating freely on disk, can extrapolate according to the angle of the normal to a surface to be measured of diffracted beam and sample like this cycle size of sample, the precision of the cycle size not only recording is high, and fast.
2) apparatus of the present invention and method are except being used in common plane (one dimension, two dimension) periodic structure, also be applicable to dot matrix pattern relative complex, levy the measurement of structure such as plane hand, compare such as scanning electron microscopy measurement with employing, it measures relative error in 5%, and measuring accuracy is high.
3) apparatus of the present invention have only been used conventional 632.8nmHe-Ne laser instrument and the beam angle measuring sensor to build after the spectrometer repacking of commonly using, therefore simple in structure, cost is low, and easy and simple to handle, quick, be highly suitable for the Quick Measurement of plan periodic structure.
Brief description of the drawings
Fig. 1 is the structural representation of the measurement mechanism of plan periodic structure of the present invention;
Fig. 2 is the SEM figure of first sample;
Fig. 3 is the SEM figure of second sample;
Fig. 4 is the SEM figure of the 3rd sample.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
Embodiment mono-:
The measurement mechanism of a kind of plan periodic structure that the present invention proposes, as shown in Figure 1, it comprises laser instrument 1, specimen holder 2, level tray 3, universal stage 4, rotate freely disk 5 and beam angle measuring sensor 6, the laser that laser instrument 1 sends incides on the surface to be measured of the sample (not shown) being placed on specimen holder 2, the laser that laser instrument 1 sends is by the center of level tray 3, specimen holder 2 is fixed on the top of level tray 3, the bottom of level tray 3 is provided with three laser vernier adjustment knob (not shown)s vertical with the surface to be measured of sample that laser instrument 1 sent for adjusting the initial position of level tray 3, the bottom of level tray 3 is connected with universal stage 4, universal stage 4 is for changing the orientation of level tray 3, on the upper surface of universal stage 4, be provided with alidade (not shown) along circumference, the precision of the angle index (not shown) of alidade is " 1 ' ", rotating freely disk 5 is coaxially connected with universal stage 4, beam angle measuring sensor 6 is fixed on and rotates freely on disk 5, beam angle measuring sensor 6 is for measuring the angle of normal to a surface to be measured of diffracted beam and sample.At this, utilize the angle index arranging along circumference on the upper surface of universal stage 4, can read easily the angle that beam angle measuring sensor 6 rotates through, the precision of angle index is made as to " 1 ' ", can make to calculate that according to test philosophy the I of actual measurement cycle precision reaches 0.1nm.
In this specific embodiment, it is the He-Ne laser instrument of 632.8nm that laser instrument 1 adopts wavelength.At this, beam angle measuring sensor 6 comprises a steel cylinder 61, and the centre mark of an end face of steel cylinder 61 has crosshair 62, and this end face near specimen holder 2 towards specimen holder 2.In the time of this beam angle measuring sensor 6 of actual fabrication, also can directly use the telescope parts of existing spectrometer, remove after object lens, eyepiece at it end face near specimen holder 2 and be accompanied by center and indicate the circular hard paper of crosshair.
In this specific embodiment, the sample using is based on the prepared planar-periodic pattern forming of beamwriter lithography.Fig. 2 has provided the SEM figure of first sample, and it is the relatively simple plan periodic structure of a kind of dot matrix pattern, is 509.7nm through its cycle of scanning electron microscope test; Fig. 3 has provided the SEM figure of second sample, and it is that a kind of dot matrix pattern is windmill-shaped plane hand and levies periodic structure, is 515.8nm through its cycle of scanning electron microscope test; Fig. 4 has provided the SEM figure of the 3rd sample, and it is that the slightly rectangular plane hand of a kind of dot matrix pattern is levied structure, is 414.3nm through its cycle of scanning electron microscope test.
Embodiment bis-:
A measuring method for measurement mechanism measurement plane periodic structure described in Application Example one, it comprises the following steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. first sample is fixed on specimen holder 2, then utilizes the vernier adjustment knob of the bottom that is arranged at level tray 3 to adjust the initial position of level tray 3, the laser that energizer 1 is sent is vertical with the surface to be measured of first sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, make the central spot of laser, the central point that is placed in the sample on specimen holder and beam angle measuring sensor that laser instrument sends in same level, can effectively improve like this measuring accuracy.
4. the bottom of level tray 3 is fixedly connected with universal stage 4, then rotates universal stage 4 and change the orientation of level tray 3, the incidence angle θ that makes laser that now laser instrument 1 sends incide the surface to be measured of first sample is 20 degree.
5. rotary beam measurement of angle element 6, Shi Qi center is just to diffracted beam, measures incidence angle θ that laser that laser instrument 1 sends incides the surface to be measured of first sample and be the angle of the normal to a surface to be measured of 20 diffracted beams while spending and first sample
be 66.7 degree.
6. according to the angle of the normal to a surface to be measured of diffracted beam and first sample
extrapolate the cycle size of first sample.Because basis is in the time that light beam irradiates is on periodic structure, each periodic unit all can reflecting part light beam, so each periodic unit can be used as wavefront one by one, on different directions angle, produce disappear mutually, constructive interference, therefore can extrapolate according to incident angle and angle of diffraction the cycle size of periodic structure.
7. change the orientation of level tray 3 by same direction rotation universal stage 4, the incidence angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of first sample is respectively 39.3 degree, 60 degree, 80 degree, be 39.3 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5.
be 39.3 degree; Be 60 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5.
be 22.9 degree; Be 80 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5.
be 15.6 degree.
Table 1 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 1 can draw, the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 2%, average out to 1.4%.
The relative error in the cycle of first sample that table 1 scanning electron microscope and the inventive method record
Embodiment tri-:
The measuring method of the present embodiment is identical with the measuring method of embodiment bis-, just sample is changed to second sample and measures, and it comprises the following steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. second sample is fixed on specimen holder 2, then utilizes the vernier adjustment knob of the bottom that is arranged at level tray 3 to adjust the initial position of level tray 3, the laser that energizer 1 is sent is vertical with the surface to be measured of second sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, make the central spot of laser, the central point that is placed in the sample on specimen holder and beam angle measuring sensor that laser instrument sends in same level, can effectively improve like this measuring accuracy.
4. the bottom of level tray 3 is fixedly connected with universal stage 4, then rotates universal stage 4 and change the orientation of level tray 3, the incidence angle θ that makes laser that now laser instrument 1 sends incide the surface to be measured of second sample is 20 degree.
5. rotary beam measurement of angle element 6, Shi Qi center is just to diffracted beam, measures incidence angle θ that laser that laser instrument 1 sends incides the surface to be measured of second sample and be the angle of the normal to a surface to be measured of 20 diffracted beams while spending and second sample
be 67 degree.
6. according to the angle of the normal to a surface to be measured of diffracted beam and second sample
extrapolate the cycle size of second sample.
7. change the orientation of level tray 3 by same direction rotation universal stage 4, the incidence angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of second sample is respectively 39.3 degree, 60 degree, 80 degree, be 39.3 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5.
be 39.3 degree; Be 60 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5.
be 22.4 degree; Be 80 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5.
be 15.1 degree.
Table 2 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 2 can draw, the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 4%, average out to 2.3%.
The relative error in the cycle of second sample that table 2 scanning electron microscope and the inventive method record
Embodiment tetra-:
The measuring method of the present embodiment is identical with the measuring method of embodiment bis-, just sample is changed to the 3rd sample and measures, and it comprises the following steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. the 3rd sample is fixed on specimen holder 2, then utilizes the vernier adjustment knob of the bottom that is arranged at level tray 3 to adjust the initial position of level tray 3, the laser that energizer 1 is sent is vertical with the surface to be measured of the 3rd sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, make the central spot of laser, the central point that is placed in the sample on specimen holder and beam angle measuring sensor that laser instrument sends in same level, can effectively improve like this measuring accuracy.
4. the bottom of level tray 3 is fixedly connected with universal stage 4, then rotates universal stage 4 and change the orientation of level tray 3, the incidence angle θ that makes laser that now laser instrument 1 sends incide the surface to be measured of the 3rd sample is 40 degree.
5. rotary beam measurement of angle element 6, Shi Qi center is just to diffracted beam, measures incidence angle θ that laser that laser instrument 1 sends incides the surface to be measured of the 3rd sample and be the angle of the normal to a surface to be measured of 40 diffracted beams while spending and the 3rd sample
be 70 degree.
6. according to the angle of the normal to a surface to be measured of diffracted beam and the 3rd sample
extrapolate the cycle size of the 3rd sample.
7. change the orientation of level tray 3 by same direction rotation universal stage 4, the incidence angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of the 3rd sample is respectively 52.4 degree, 60 degree, 80 degree, be 52.4 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5.
be 52.4 degree; Be 60 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5.
be 45.1 degree; Be 80 while spending at incidence angle θ, record the angle of the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5.
be 36.1 degree.
Table 3 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 3 can draw, the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 4%, average out to 3.3%.
The relative error in the cycle of the 3rd sample that table 3 scanning electron microscope and the inventive method record
Claims (4)
1. the measurement mechanism of a plan periodic structure, it is characterized in that comprising laser instrument, specimen holder, level tray, universal stage, rotate freely disk and beam angle measuring sensor, the laser that described laser instrument sends incides on the surface to be measured that is placed in the sample on described specimen holder, described specimen holder is fixed on the top of described level tray, the bottom of described level tray is provided with initial position for adjusting described level tray and makes the vernier adjustment knob that laser that described laser instrument sends is vertical with the surface to be measured of described sample, the bottom of described level tray is connected with described universal stage, described universal stage is for changing the orientation of described level tray, on the upper surface of described universal stage, be provided with alidade along circumference, the precision of the angle index of described alidade is " 1 ' ", the described disk that rotates freely is coaxially connected with described universal stage, described beam angle measuring sensor is fixed on described rotating freely on disk, described beam angle measuring sensor is for measuring the angle of normal to a surface to be measured of diffracted beam and described sample.
2. the measurement mechanism of a kind of plan periodic structure according to claim 1, is characterized in that described laser instrument adopts the He-Ne laser instrument that wavelength is 632.8nm.
3. the measurement mechanism of a kind of plan periodic structure according to claim 1 and 2, it is characterized in that described beam angle measuring sensor comprises a steel cylinder, the centre mark of an end face of described steel cylinder has crosshair, and this end face is near described specimen holder.
4. application rights requires a measuring method for the measurement mechanism measurement plane periodic structure described in 1, it is characterized in that comprising the following steps:
1. open laser instrument, and make its preheating about 20 minutes;
2. sample is fixed on specimen holder, then utilizes the vernier adjustment knob of the bottom that is arranged at level tray to adjust the initial position of level tray, the laser that energizer is sent is vertical with the surface to be measured of sample;
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, make the central spot of laser, the central point that is placed in the sample on specimen holder and beam angle measuring sensor that laser instrument sends in same level;
4. the bottom of level tray is fixedly connected with universal stage, then rotates universal stage and change the orientation of level tray, suppose that the incident angle that laser that now laser instrument sends incides the surface to be measured of sample is θ;
5. rotary beam measurement of angle element, Shi Qi center is just to diffracted beam, the angle of the normal to a surface to be measured of diffracted beam and sample when measuring incident angle that laser that laser instrument sends incides the surface to be measured of sample and being θ
6. according to the angle of the normal to a surface to be measured of diffracted beam and sample
extrapolate the cycle size of sample.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210168132.6A CN102706276B (en) | 2012-05-24 | 2012-05-24 | Planar periodic structure measurement device and measurement method |
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| CN201210168132.6A CN102706276B (en) | 2012-05-24 | 2012-05-24 | Planar periodic structure measurement device and measurement method |
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| CN102706276A CN102706276A (en) | 2012-10-03 |
| CN102706276B true CN102706276B (en) | 2014-10-08 |
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| CN110132549A (en) * | 2019-05-20 | 2019-08-16 | 中国科学院福建物质结构研究所 | Grid stroke density measuring equipment and its measurement method |
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| US5867276A (en) * | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| CN101206112A (en) * | 2007-12-20 | 2008-06-25 | 中国科学院长春光学精密机械与物理研究所 | Method for measuring nano-scale multilayer film structure |
| CN102183212B (en) * | 2010-12-28 | 2013-03-20 | 睿励科学仪器（上海）有限公司 | Method and device for rapidly determining topography parameters of microperiodic structure |
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