CN102696120A - 形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 - Google Patents
形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 Download PDFInfo
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- CN102696120A CN102696120A CN2011800060064A CN201180006006A CN102696120A CN 102696120 A CN102696120 A CN 102696120A CN 2011800060064 A CN2011800060064 A CN 2011800060064A CN 201180006006 A CN201180006006 A CN 201180006006A CN 102696120 A CN102696120 A CN 102696120A
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/688382 | 2010-01-15 | ||
US12/688,382 US8105852B2 (en) | 2010-01-15 | 2010-01-15 | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate |
PCT/IB2011/050096 WO2011086494A1 (en) | 2010-01-15 | 2011-01-10 | Method of forming a composite substrate and growing a iii-v light emitting device over the composite substrate |
Publications (2)
Publication Number | Publication Date |
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CN102696120A true CN102696120A (zh) | 2012-09-26 |
CN102696120B CN102696120B (zh) | 2015-11-25 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201180006006.4A Active CN102696120B (zh) | 2010-01-15 | 2011-01-10 | 形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8105852B2 (zh) |
EP (1) | EP2524400B1 (zh) |
JP (1) | JP5727514B2 (zh) |
KR (2) | KR101783796B1 (zh) |
CN (1) | CN102696120B (zh) |
TW (1) | TWI523256B (zh) |
WO (1) | WO2011086494A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110600435A (zh) * | 2019-09-05 | 2019-12-20 | 方天琦 | 多层复合基板结构及其制备方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8536022B2 (en) * | 2010-05-19 | 2013-09-17 | Koninklijke Philips N.V. | Method of growing composite substrate using a relaxed strained layer |
US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8686461B2 (en) | 2011-01-03 | 2014-04-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having stepped substrates and method of fabrication |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
CN105244423B (zh) * | 2015-10-30 | 2018-11-20 | 漳州立达信光电子科技有限公司 | 无衬底led芯片的封装方法及无衬底led芯片 |
US10756235B2 (en) | 2017-03-09 | 2020-08-25 | Enkris Semiconductor, Inc | Stripped method for preparing semiconductor structure |
GB2586862B (en) * | 2019-09-06 | 2021-12-15 | Plessey Semiconductors Ltd | LED precursor incorporating strain relaxing structure |
GB2593693B (en) * | 2020-03-30 | 2022-08-03 | Plessey Semiconductors Ltd | LED precursor |
Citations (6)
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US6261929B1 (en) * | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
CN1305639A (zh) * | 1998-06-10 | 2001-07-25 | 北卡罗莱纳州立大学 | 利用始于沟槽侧壁的横向生长来制造氮化镓半导体层 |
CN1348603A (zh) * | 1998-11-24 | 2002-05-08 | 北卡罗莱纳州立大学 | 用横向生长制备氮化镓层 |
CN1933205A (zh) * | 2005-08-12 | 2007-03-21 | 三星电子株式会社 | 生长半导体衬底的方法、氮化物基发光器件及其制造方法 |
US20090191659A1 (en) * | 2005-08-12 | 2009-07-30 | Samsung Electronics Co., Ltd | Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
CN101622689A (zh) * | 2007-02-19 | 2010-01-06 | 朗讯科技公司 | 宽带隙半导体器件 |
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KR20120114357A (ko) | 2012-10-16 |
TW201143132A (en) | 2011-12-01 |
EP2524400A1 (en) | 2012-11-21 |
KR101783796B1 (ko) | 2017-10-10 |
US20110177631A1 (en) | 2011-07-21 |
JP2013517622A (ja) | 2013-05-16 |
EP2524400B1 (en) | 2018-12-19 |
WO2011086494A1 (en) | 2011-07-21 |
KR101894691B1 (ko) | 2018-09-04 |
TWI523256B (zh) | 2016-02-21 |
JP5727514B2 (ja) | 2015-06-03 |
US8105852B2 (en) | 2012-01-31 |
CN102696120B (zh) | 2015-11-25 |
KR20170122790A (ko) | 2017-11-06 |
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