CN102696116A - Barrier-coated thin-film photovoltaic cells - Google Patents

Barrier-coated thin-film photovoltaic cells Download PDF

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CN102696116A
CN102696116A CN2010800450728A CN201080045072A CN102696116A CN 102696116 A CN102696116 A CN 102696116A CN 2010800450728 A CN2010800450728 A CN 2010800450728A CN 201080045072 A CN201080045072 A CN 201080045072A CN 102696116 A CN102696116 A CN 102696116A
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photovoltaic cell
layer
cell device
film photovoltaic
substrate
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P·F·卡西亚
R·S·麦利恩
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract

A thin-film photovoltaic cell wherein one or more layers of the cell is coated by atomic layer deposition with a barrier layer of an inorganic oxide resists attack by moisture or atmospheric gases of the water- and/or oxygen-sensitive layers of the photovoltaic cell.

Description

Apply the film photovoltaic cell on barrier layer
Present patent application requires the priority of the U.S. Provisional Patent Application 61/231493 of submission on August 5th, 2010.In the aforementioned patent applications each all is incorporated herein with the mode that refers to wherein in full.
Invention field
The present invention provides film photovoltaic cell, and wherein one or more layers apply to prevent the intrusion to the water sensitive layer and/or the oxygen sensitive layer of photovoltaic cell of moisture or atmosphere with the inorganic oxide barrier layer through ald.
Background of invention
Photovoltaic (PV) battery that solar radiation or illumination is changed into electric energy needs operate down at harsh usually outdoor conditions the whole year.In order to ensure 25 years or longer useful life, solar cell needed robust packing.For solar cell is incorporated in the building as the roof type film, expect that also photovoltaic cell is the flexible product of reel form.
Film photovoltaic cell can be processed into the roll product on metal forming or the plastic base.The top flat of flexible photovoltaic battery or anter (collecting solar radiation through said top flat or anter) must have optical transparence, weatherability and antiscale property, and moisture and other atmosphere are had low permeability.
Film photovoltaic cell can be based on inorganic material such as amorphous silicon (a-Si), cadmium telluride (CdTe) or copper indium (gallium) two selenium (CIS/CIGS), and perhaps based on emerging technology, said emerging technology is based on dye sensitization, organic and nano material.The problem that moisture sensitive faces for all film photovoltaic technology, but especially severe for copper indium callium diselenide (CIGS).With regard to the copper indium callium diselenide (CIGS) photovoltaic cell of 25 years useful life realizing expectation, it is believed that the barrier layer must provide less than 5 * 10 -4G-H 2O/m 2The vapor transmission rate in/sky.Although this is strict, the copper indium callium diselenide (CIGS) photovoltaic cell is still because its high efficiency (with regard to the scale battery of small test chamber, being～20%) is attractive.
The typical packaging scheme that is used for the film photovoltaic cell on the flexible base, board is shown in Fig. 1.This structure comprises substrate 12, encapsulating material 14 and the transparent anter 16 that photovoltaic cell 10 is processed above that, and said substrate 12 can be metal forming or polymer.During no damp-proof layer, this structure will have limited useful life, with regard to the film photovoltaic cell of moisture-sensitive usually less than 1 year.Anter provides some moisture barrier properties comprises, and also can have polymer sheet 18 between two parties, and it can comprise one or more layers (for example, 18a and 18b) of polymer (for example, polyester, fluoropolymer).Yet the intrinsic permeability of polymer is usually too high and can not realize the protection level that the copper indium callium diselenide (CIGS) photovoltaic cell is required.
Al by Atomic layer deposition method 2O 3Depositing of thin film has been disclosed and has been used to be encapsulated with OLED (OLED), produces the current potential barrier film that is used for this type of device.In Atomic layer deposition method, water and ozone are all as oxidant.
Pentacene/C is also disclosed 60Heterojunction organic solar batteries sealing in the roof liner configuration, said configuration has the Al through ald 2O 3Layer.In this type of device, gather light through glass substrate.
None is provided for the protection level that is enough to obtain the desired function useful life of film photovoltaic cell (especially copper indium callium diselenide (CIGS)) damp-proof layer that uses at present.Therefore, still need the damp-proof layer of improvement provided by the invention.
Summary of the invention
In different embodiments, the present invention provides photovoltaic cell device and manufacturing approach thereof.
In one embodiment; A kind of film photovoltaic cell device is provided, and said film photovoltaic cell device comprises: the gas permeation barrier layer that substrate, the photovoltaic cell that is attached to said substrate and at least one employing water vapor precursors and trimethyl aluminium reactant form through Atomic layer deposition method.Photovoltaic cell comprises Cu (In, Ga) Se 2Absorbed layer and CdS Window layer and optional extra play.
In another embodiment, the method for structure photovoltaic cell device is provided, said method comprises: substrate (i) is provided; (ii) on substrate, form and comprise Cu (In, Ga) Se 2The photovoltaic cell of absorbed layer and CdS Window layer; Photovoltaic cell is coated with adopts water vapor precursors and trimethyl aluminium reactant to pass through the gas permeation barrier layer that Atomic layer deposition method forms.
In another embodiment, Atomic layer deposition method of the present invention is implemented in the reactor of vacuum chamber is housed and may further comprise the steps in order: (i) make precursor vapor get into said chamber; (ii) purge precursor vapor to stay thin precursor adsorption layer from said chamber; (iii) under heat condition, reactant is incorporated in the chamber, the reaction of said heat condition promotion and precursor is to form the material sublevel on the gas permeation barrier layer of expecting; The product that (iv) purges indoor reactant and generate by reaction; (v) repeat the enough number of times of abovementioned steps have preliminary election thickness with formation gas permeation barrier layer.
The accompanying drawing summary
When with reference to following DESCRIPTION OF THE PREFERRED of the present invention and accompanying drawing, the present invention will more be made much of and other advantage will become obviously, the similar components of wherein similar all some views of accompanying drawing number indication, and wherein:
Fig. 1 shows the photovoltaic cell device of prior art, and it comprises photovoltaic cell structure metal forming or polymer substrate, encapsulating material and transparent anter above that;
Fig. 2 shows the configuration of an embodiment of the photovoltaic cell that ald of the present invention applies;
Fig. 3 shows the configuration of another embodiment of the photovoltaic cell that ald of the present invention applies;
Fig. 4 A-4D shows some configuration of chalcopyrite and CdTe solar cell;
Fig. 5 shows the configuration of amorphous state or nano-crystal film silicon solar cell;
Fig. 6 shows the schematic top view of the battery of instance; And
Fig. 7 is open circuit voltage V OcThe figure of relative time, it shows the coating of instance and the copper indium callium diselenide (CIGS) photovoltaic cell the sealed stability under 85 ℃ and 85% relative humidity.
Detailed Description Of The Invention
Ald (ALD) is the film growth method for preparing the film of the many standards that satisfy hyposmosis potentially.The description of Atomic layer deposition method be found in Tuomo Suntola's " Atomic Layer Epitaxy ", Thin Solid Films, the 216th the volume (1992), the 84-89 page or leaf.As its name suggests, Atomic layer deposition method makes the material layer by layer deposition.In general, said method realizes at the indoor two-step reaction that utilizes, and repeats with accumulation layer, thereby forms the coating of desired thickness.At first, film precursor steam is incorporated in the chamber.Do not receive the constraint of any theory, it is believed that usually to be attracted on indoor substrate or the device for the thin precursor layer of individual layer basically.As used herein, should understand term " adsorption layer " and be meant that its atom faintly is bonded to the layer of substrate surface., through for example evacuated chamber or through the flow of sweep gas that make inertia from chamber purge steam, to remove any steam excessive or that do not adsorb thereafter.Under heat condition, reactant is incorporated in the chamber then, said heat condition promotes to expect with formation with the reaction of absorption precursor the sublevel of barrier material.Then volatile product and excess precursor are pumped from said chamber.The additional sublevel of material forms with the layer that formation has preliminary election thickness through repeating the enough number of times of abovementioned steps.
Common chemical vapour deposition (CVD) and physical gas-phase deposite method need cause and film growth in discrete nucleation site.Physical gas-phase deposite method especially is easy to produce the cylindric microstructure with border, and gas can be easy to along said boundary penetration.By contrast, ald can prepare the extremely thin film with extremely low gas permeability, makes this type of film as being used to protect such as the barrier layer of the sensitive electronic devices of photovoltaic cell and attractive.Ald becomes the especially attracting method that is used to protect moisture and/or oxygen sensitive device owing to it forms the height conformal coating.This makes to have fully coating and the protection of device quilt that complex-terrain is learned.
One embodiment of the invention provide and comprise one or more layers photovoltaic cell, and said one or more layers are coated with the barrier layer that forms through ald to be passed through to stop atmospheric gas.The representative embodiment of this type of photovoltaic cell device generally illustrates with 20 among Fig. 2.Photovoltaic cell 22 is built on the top of flexible base, board 24, and said substrate can be processed by metal or polymer.Utilize Atomic layer deposition method that protective layer 26 is applied on the battery 22.Layer 26 is impermeable, i.e. its reduction comprises the infiltration at least 10 of the atmospheric gas of oxygen and water vapour 5Doubly, the performance of the typical photovoltaic devices of the known reduction of said oxygen and water vapour.Both further protections are provided by weather-proof top layer 28 to atomic layer deposition lamination 26 and photovoltaic cell 22.
Form and the material that is suitable for stopping comprises oxide and the nitride and their combination of IVB in the periodic table of elements, VB, VIB, IIIA and IVA family by ald.That especially paid close attention in this group is SiO 2, Al 2O 3And Si 3N 4Oxide advantage is for leaving for visible light or the attractive optical transparence of electrooptical device of access to plant in this group, and said electrooptical device comprises photovoltaic cell.Should understand term as used herein " visible light " and comprise having wavelength and the generally electromagnetic radiation of the perceptible wavelength of human eye that drops in infrared ray and the ultraviolet spectrogram zone, all wavelengths is all in the performance constraint of typical electrooptical device.The nitride of silicon and aluminium also is transparent in visible spectrum.
Being used for Atomic layer deposition method, can be selected from those skilled in the art with the precursor that forms the barrier material be used for apparatus of the present invention effectively and reactant known and in the list of references of delivering, process the material of form; Said list of references is " the ALD precursor chemistry:Evolution and future challenges " of M.Leskela and M.Ritala for example; Journal de Physique IV; The 9th volume, 837-852 page or leaf (1999) and interior list of references thereof.Water vapour and ozone are valuably as precursor.
In representational practical implementation, Atomic layer deposition method can be described by following overall reaction:
2Al(CH 3) 3+3H 2O→Al 2O 3+6CH 4。
In real process, said reaction is carried out with two half-reactions from the teeth outwards, and said two half-reactions can be expressed as:
Al-(CH 3) *+H 2O→Al-OH *+CH 4
Al-OH *+Al(CH 3) 3→Al-O-Al(CH 3) 2+CH 4，
Wherein " * " is illustrated in the material that exists on the material surface of coating.Certainly, Atomic layer deposition method can use other precursor and reactant to implement.
Ald of the present invention stops that synthesis can implement along with photovoltaic cell is maintained at about under 50 ℃ to the 250 ℃ temperature in the scope.Too high temperature (＞250 ℃) comes to light incompatible with the processing of temperature sensitive type polymeric substrates, this be because the chemical degradation of one or more polymer or since the ald coating that the large scale change of substrate causes break.Kinetics generally is found in when being lower than 50 ℃ slow excessively.
The thickness that discovery is suitable for barrier film is 2nm to 100nm.Preferred scope is 2nm to 50nm.Thin layer can not make more anti-deflection the film fracture.This is that the polymer substrate of desired characteristic is important for pliability.The film fracture will endanger barrier property.Thin barrier film also increases the transparency.Can have the minimum thickness corresponding to the continuous film percentage of coverage, with regard to this percentage of coverage, all basically substrate flaws are all covered by barrier film.With regard to almost ideal substrate, the threshold thickness that is used for acceptable barrier property is estimated as 2nm at least, but can be thick in 10nm.Found that the thick ald barrier layer of 25nm is enough to reduce oxygen usually and transmits through polymer film to being lower than 0.0005g-H 2O/m 2The level of the measurement sensitivity in/sky.
Some oxides that form through ald can be benefited from nitride-barrier and comprise " initial layers " or " adhesion layer " adhesion with the required protection of promotion ald course photovoltaic cell.For example, photovoltaic cell device of the present invention can comprise the semiconductor that is interposed in photovoltaic cell and the adhesion layer between the protectiveness ald gas permeation barrier layer.The thickness of adhesion layer is in the scope of 1nm to 100nm.Preferably, the material that is used for adhesion layer is selected from the group identical with barrier material.Aluminium oxide and silica are preferred for also the adhesion layer that can deposit through ald, although other method for example chemistry and physical vapour deposition (PVD) or other deposition process known in the art also can be suitable.
Another embodiment of film photovoltaic cell device is generally described with 30 among Fig. 3.Here, copper indium callium diselenide (CIGS) photovoltaic cell 32 forms and receives the protection of ald moisture barrier coatings 26 on glass substrate 34.Battery 32 is sealed by epoxides coating 36 with coating 26; It is covered by top layer 38 then, and said top layer 38 can be TEFLON
Figure BPA00001531347400061
FEP 260C fluoropolymer.
Other the useful and exemplary configuration that comprises the photovoltaic cell device of the present invention on ald barrier layer is shown among Fig. 4 and Fig. 5.In general, each cell apparatus comprises transparent conductive oxide (TCO) layer of substrate, formation front contact (f-contact), one or more absorbed layer and the layer that is used for back contact (b-contact).Through being connected to front contact and the back contact shown in "+" and "-" indicator light, electric power derives from photovoltaic cell in a usual manner.Some cell apparatus embodiments also comprise one or more following layers that are selected from: Window layer, resilient coating and interconnection layer and their combination.
In general, substrate is made up of metal, polymer or glass basically.Thin metal and polymeric substrates have flexible advantage; Glass has transparent or semitransparent advantage with some polymer.Suitable polymer blend comprises polyester (for example, PET, PEN), polyamide, polyacrylate and polyimides.When substrate for flexible and maybe can reduce the diffusion ion source of photovoltaic cell performance when permeable to atmosphere, can the atomic layer deposition lamination be coated on the one or both sides of substrate.Except the ald coating, substrate also can comprise other functional coat of the optics, electricity or the mechanical property that are used to strengthen photovoltaic devices.
Including transparent conducting oxide layer generally includes In 2O 3, SnO 2, ZnO, CdO and Ga 2O 3Mixture or doping oxide, and conductive path is provided, the electric current that produces by basic all active regions of photovoltaic cell this path of can flowing through.Common instance in the photovoltaic cell comprises that ITO (mixes the In of the 9 atom % tin of having an appointment 2O 3) and AZO (mixing the ZnO of the 3-5 atom % aluminium of having an appointment).
Absorbed layer absorbs the light from incident light spectrum (400-1200nm).Suitable absorbing material comprises ternary brass mineralising compound and CdTe and related compound, and said ternary brass mineralising compound is CuInSe for example 2, CuInS 2, CuGaSe 2, CuInS 2, CuGaS 2, CuAlSe 2, CuAlS 2, CuAlTe 2, CuGaTe 2And their combination.
Window layer for absorbed layer form heterojunction semiconductive thin film (if absorbed layer be the p-type then be the n-type, if or absorbed layer be the n-type then be the p-type), electric charge separates through the built-in electric field at tubercle place thus.The material that is applicable to Window layer comprises CdS, ZnS, ZnSe, the In that is used for the chalcopyrite absorber 2S 3, (Zn, Cd) S and Zn (O, S), and the ITO, CdS and the ZnO that are used for the CdTe absorber.In some practical implementations, aforementioned p-n semiconductor tubercle structure comprises with the i-N-type semiconductor N between two parties, thereby forms the p-i-n configuration.
The layer that is used for back contact is generally including transparent conducting oxide layer or metal.
Resilient coating is made up of transparent electric insulation dielectric usually basically.Suitable material comprises ZnO, Ga 2O 3, SnO 2And Zn 2SnO 4, and their mixture.
In the configuration of Fig. 4 A, the top of photovoltaic cell device is configured to be received on the direction of arrow indication incides the light on the transparency carrier 42, and said top therefore can be owing to its tip position is called as roof liner.Including transparent conducting oxide layer 44 provides positive front contact.Window 46 is between transparent conductive oxide 44 and absorber 48.Metal level 50 provides negative back contact, and the ald barrier layer is coated on it with harmful moisture and the gas permeation of protection photovoltaic cell opposing.
In the configuration of Fig. 4 B and 4C, the ald barrier layer is applied on metallized including transparent conducting oxide layer and/or the resilient coating.As other a kind of selection, but the atomic layer deposition lamination self is used for resilient coating.Fig. 4 B configuration comprises and has electrode 58 the transparent conductive oxide top layer 44 of (forming through silk screen printing and roasting metal dust thickener usually).Active semi-conductor window 46 is separated through resilient coating 52 and transparent conductive oxide 44 with absorbed layer 48.Transparent conductive oxide bottom 54 provides back contact and on the top of substrate 56, forms.Through utilizing transparency carrier 60, the configuration of Fig. 4 C can be accepted back illumination.
The ald barrier layer also is useful in serial configured, and it utilizes a plurality of absorbers in the stacking configuration, and is general in order to improve the conversion efficiency of device on whole incident light spectrum.The ald barrier layer can be coated on metallized transparent conductive oxide and/or the buffering-Window layer once more.Fig. 4 D serial configured is configured on the substrate 56 and comprises first absorber 64 and second absorber 72 that combines with corresponding buffering-Window layer 62 and 70.Two absorber/buffering-Window layer provide sensitiveness in the different spectrum scope.Light also at first shines on first absorber 64 through first including transparent conducting oxide layer 44 (as front contact) incident.Unabsorbed light continues to propagate and arrive second absorber 72.Being electrically connected in series by interconnection layer 66 provides, and said interconnection layer is connected to second including transparent conducting oxide layer 68 with absorber 64.The back side of second absorber 72 is connected to metal level 50, and it provides back contact.
The atomic layer deposition lamination also can be used for protecting amorphous state or nano-crystal film silicon (a-Si, nc-Si) solar cell.Fig. 5 shows a kind of form of unijunction solar cell, but binode and three junction batteries also are known.One or more atomic layer deposition laminations are used for every kind of battery valuably.
Amorphous state or the nanocrystal silicon that is used for photovoltaic application is generally the alloy with hydrogen, is expressed as a-Si:H or nc-Si:H.Doping realizes with the identical dopant that is generally used for silicon metal capable of using of preparation n-type or p-type.Suitable p-type dopant comprises iii group element (for example boron).Suitable n-type dopant comprises V group element (for example phosphorus).Also can be used for changing optical absorption characteristic and other electrical quantity with germanium or cesium alloyization.
Thin film amorphous silicon and nanocrystal silicon solar cell generally include sequence of layer; It comprises including transparent conducting oxide layer 44, have the p-i-n semiconductor structure 80 of p-type silicon alloy layer 82, i-Si alloy-layer 84 and n-type silicon alloy layer 86, resilient coating 88 and the metal level 90 that is used for back contact, and all layers all form on substrate 92.The identical substrate and the transparent conductive oxide material that are used for Fig. 4 configuration suit.Semiconductor structure layer 80 one or many through repeating alkaline battery are also optimized the absorption of piling up and are prepared and have more high efficiency series-connected cell.
In single p-i-n battery, the ald barrier layer on the metallized including transparent conducting oxide layer can stop moisture to invade photovoltaic cell.In series-connected cell, the ald barrier layer can be coated on metallized including transparent conducting oxide layer and/or the resilient coating.As other a kind of selection, the atomic layer deposition lamination can be used in the resilient coating or owns.
In some embodiments, for example as shown in Figure 3, the ald coating also can be protected the edge of the layer of photovoltaic cell.
Embodiment
The ald that directly are deposited on the copper indium callium diselenide (CIGS) photovoltaic cell stops.
The method of utilizing copper indium callium diselenide (CIGS) battery manufacturing field to know is processed photovoltaic (PV) cell apparatus on the glass substrate of 2 inches x2 inches.The schematical top view of cell apparatus 100 before ald is shown among Fig. 6.The order of layer is included in the molybdenum layer on the glass substrate 102; Cu (In, Ga) Se 2(CIGS) the metal grill electrode 106 of absorbed layer, CdS thin window layer, ZnO thin insulating resilient coating, tin indium oxide (ITO) including transparent conducting oxide layer (TCO) 104 and nickel/aluminium alloy.Battery size (1cm 2) limit the indium tin oxide layer 104 of the shadow mask deposition through 1cm * 1cm.
The wide part 108 of the 1-2mm of nickel/aluminium top electrode 106 is masked being used for electrically contacting subsequently near glass edge, and the copper indium callium diselenide (CIGS) photovoltaic cell of mask is placed in the reactor (Cambridge Nanotech Savannah 200) to be used to implement atomic layer deposition process.Reactor is pumped to the back pressure (reactionless thing or precursor) of about 0.3 holder continuously with the 20sccm purging and with the small-sized machine pump with nitrogen.Nitrogen both also was used as purge gas as the carrier of reactant.Reactant trimethyl aluminium steam and precursor water vapour are incorporated in the reactor in succession.More particularly, with regard to each deposition step in order, at first with 15 milliseconds of the water vapour of nitrogen carrying dipping copper indium callium diselenide (CIGS) photovoltaic cells, then with flowing nitrogen purge 30 seconds.Flood 15 milliseconds of photovoltaic cells with trimethyl aluminium steam then, then purged 15 seconds with flowing nitrogen through the nitrogen carrying.This reaction sequence produces Al on photovoltaic cell 2O 3Layer.Repeat this deposition step 500 times (circulation) in succession, wherein battery is maintained at 120 ℃.Formed Al 2O 3Thickness visual determination on visual of silicon be about 55nm, corresponding to the ald speed of about 0.11nm/ circulation.
At ald Al 2O 3After the barrier layer, with ultraviolet solidifiable epoxides encapsulating material with Teflon
Figure BPA00001531347400091
FEP 200C film (0.002 inch thick) is attached to photovoltaic cell, and leaving space is to be used to link electrical contact at the battery edge place.Teflon FEP
Figure BPA00001531347400092
As weathered layer, it stops at ald Al 2O 3Photovoltaic cell deterioration not between the final operating period is also protected in water vapour condensation on barrier layer and the battery in addition.
The electrical contact for preparing the masks area of nickel/aluminium top electrode through welded wire.Al is worn through mechanically drawing in contact away from the back molybdenum electrode of cell area 2O 3, ZnO, CdS and Cu (In, Ga) Se 2Thin top layer, and subsequently the welding prepare.
(promptly be derived from the Al of ald in order to test the barrier layer 2O 3And Teflon
Figure BPA00001531347400093
FEP 200C film) barrier property places environmental chamber and aging down 85 ℃ and 85% relative humidity (RH) with the photovoltaic cell of sealing, and is exposed to the 1000W/m that comes from solar simulator simultaneously 2Constant illumination.At this test period, the monitoring open circuit voltage obtains the result who describes in Fig. 7 figure line as the function of time.Find out that even after under these conditions, exposing 1000 hours, still can not detect the change of measurable open circuit voltage, this shows the Al that is derived from ald 2O 3With Teflon FEP 200C coating protects photovoltaic cell to avoid the expection deterioration that causes owing to moisture and other atmosphere together.Especially significantly be that the copper indium callium diselenide (CIGS) photovoltaic cell moves satisfactorily, although battery is exposed to the water vapour as precursor during the ald barrier deposition.
However described in detail the present invention, but should be appreciated that this type of details needn't strictly observe, those skilled in the art can be to its change that adds and modification.Should understand, photovoltaic cell of the present invention and manufacturing thereof can be carried out by multiple mode, utilize different equipment and implement step as herein described with different orders.All these change and modification is to be understood that to belonging to like the defined scope of the present invention of accessory claim.

Claims (21)

1. film photovoltaic cell device, said film photovoltaic cell device comprises:
(a) substrate;
(b) photovoltaic cell, said photovoltaic cell are attached to said substrate and comprise Cu (In, Ga) Se 2Absorbed layer and CdS Window layer and preceding electrical contact and back electrical contact; With
(c) at least one gas permeation barrier layer, said gas permeation barrier layer adopt water vapor precursors and trimethyl aluminium reactant to form on said photovoltaic cell through Atomic layer deposition method.
2. film photovoltaic cell device as claimed in claim 1; Wherein said photovoltaic cell also comprises including transparent conducting oxide layer; The electric current that said battery produces conducts through said including transparent conducting oxide layer, and said including transparent conducting oxide layer is configured to provide at least one in said preceding electrical contact and the back electrical contact.
3. film photovoltaic cell device as claimed in claim 1, wherein said gas permeation barrier layer have the thickness in about 2 to 100nm scopes.
4. film photovoltaic cell device as claimed in claim 2; Wherein said including transparent conducting oxide layer provides said preceding electrical contact; And said device also comprises the buffer insulation layer, and said buffer insulation layer is arranged between said front contact including transparent conducting oxide layer and the said Window layer.
5. film photovoltaic cell device as claimed in claim 4, wherein said buffer insulation layer is made up of ZnO basically.
6. film photovoltaic cell device as claimed in claim 1, said film photovoltaic cell device also comprises the fluoropolymer top layer.
7. film photovoltaic cell device as claimed in claim 1, wherein said substrate is made up of glass basically.
8. film photovoltaic cell device as claimed in claim 1, wherein said substrate is made up of polymer basically.
9. film photovoltaic cell device as claimed in claim 1, wherein said substrate is made up of metal basically.
10. film photovoltaic cell device as claimed in claim 1, said film photovoltaic cell device also comprises the adhesion layer that is interposed between said gas permeation barrier layer and the said photovoltaic cell.
11. film photovoltaic cell device as claimed in claim 10, wherein said adhesion layer applies through Atomic layer deposition method.
12. film photovoltaic cell device as claimed in claim 1, said film photovoltaic cell device also comprise at least one the gas permeation barrier layer that on said substrate, forms through Atomic layer deposition method.
13. be used to construct the method for photovoltaic cell device, said method comprises:
(a) substrate is provided;
(b) formation comprises Cu (In, Ga) Se on said substrate 2The photovoltaic cell of absorbed layer and CdS Window layer; And
(c) apply said photovoltaic cell with the gas permeation barrier layer, said gas permeation barrier layer adopts water vapor precursors and trimethyl aluminium reactant to form through Atomic layer deposition method.
14. method as claimed in claim 13, wherein said Atomic layer deposition method is implemented in reactor and may further comprise the steps in order:
(a) make water vapour enter into said chamber on said battery, to form adsorption layer;
(b) purge said chamber;
(c) under heat condition, the trimethyl aluminium reactant is incorporated in the said chamber, said heat condition promotes the reaction of said trimethyl aluminium and said adsorbed water;
(d) product that purges the return volatile reactants in the said chamber and generate by said reaction; And
(e) repeating said steps (a) and (b), (c) and (d) enough number of times have the said gas permeation barrier layer of preliminary election thickness with formation.
15. method as claimed in claim 13, wherein said heat condition comprise said photovoltaic cell is maintained at about 50 ℃ of temperature to about 250 ℃ of scopes.
16. method as claimed in claim 14, wherein said purging comprises the said chamber of finding time.
17. comprising, method as claimed in claim 14, wherein said purging make inert gas flow through said chamber.
18. method as claimed in claim 14, wherein said preliminary election thickness at about 2nm to about 100nm scope.
19. also comprising forming, method as claimed in claim 13, said method be interposed in the adhesion layer between said photovoltaic cell and the said gas permeation barrier layer.
20. method as claimed in claim 19, wherein said adhesion layer forms through Atomic layer deposition method.
21. also comprising through Atomic layer deposition method, method as claimed in claim 13, said method on said substrate, form at least one gas permeation barrier layer.
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