CN102693795B - Negative temperature coefficient thermistor - Google Patents
Negative temperature coefficient thermistor Download PDFInfo
- Publication number
- CN102693795B CN102693795B CN201210181642.7A CN201210181642A CN102693795B CN 102693795 B CN102693795 B CN 102693795B CN 201210181642 A CN201210181642 A CN 201210181642A CN 102693795 B CN102693795 B CN 102693795B
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- Prior art keywords
- metal oxide
- coefficient thermistor
- thermistor
- temperature coefficient
- adhesive
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052593 corundum Inorganic materials 0.000 claims abstract 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract 2
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 claims abstract 2
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims abstract 2
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000002270 dispersing agent Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a negative temperature coefficient thermistor and a manufacturing method thereof. The thermistor is manufactured by mainly mixing a metal oxide and a solvent, wherein the metal oxide comprises the following components in percentage by weight: 10 to 30 percent of Mn2O3, 40 to 65 percent of Ni2O3, 10 to 25 percent of Fe2O3, 10 to 30 percent of CuO, 0.5 to 2.5 percent of Al2O3 and 1 to 5 percent of MgO. The negative temperature coefficient thermistor and the manufacturing method thereof have the advantages that the negative temperature coefficient thermistor has high linearity, and can be conveniently applied to the temperature measurement industry; due to the adoption of the formula of the metal oxide, the combination of high resistivity and a low B value can be obtained, namely a material constant B is 2,800 to 2,900K when resistivity rho is 10 to 20 (kOhm.mm); the negative temperature coefficient thermistor can be used for a wide temperature range, namely the negative temperature coefficient thermistor can be used at high temperature and low temperature; and the negative temperature coefficient thermistor can be used for a special customer, and the series-connection of a resistor is avoided when the resistivity is low and a signal is weak in a high-temperature section.
Description
Technical field
The present invention relates to a kind of thermistor, is a kind of high-resistance low-B-value negative temperature coefficient thermistor specifically.
Background technology
The abbreviation of current NTC(Negative Temperature Coefficient, being meant to the temperature coefficient born) thermistor adopts existing formula and technology can only accomplish low resistance, low B value, even B value accomplishes 2800K ~ 2900K, and resistivity can only accomplish 0.05 ~ 0.2 (k Ω .mm); And being difficult to the formula combination realizing high value, low B value, high value, low B value and B value accomplish 2800 ~ 2900K, and resistivity can accomplish 10 ~ 20 (k Ω .mm); The low B of low-resistance, because resistance is less, cannot to use in low and high temperature section simultaneously, because resistance during high temperature is very little, because NTC characteristic raises resistance with temperature to diminish, otherwise then to become large.When applied at elevated temperature, signal is more weak, cannot meet the requirement of particular client.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the object of this invention is to provide a kind of linear high-resistance low-B-value negative temperature coefficient thermistor that better, can to use in wide temperature range and manufacture method thereof.The electricalresistivityρ of this thermistor is 10 ~ 20 (k Ω .mm), and material constant B is 2800 ~ 2900K.
Technical scheme: in order to solve the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of high-resistance low-B-value negative temperature coefficient thermistor, make primarily of metal oxide and solvent, described metal oxide comprises the composition of following percentage by weight: Mn
2o
310% ~ 30%, Ni
2o
340% ~ 65%, Fe
2o
310% ~ 25%, CuO 10% ~ 30%, Al
2o
30.5% ~ 2.5%, MgO 1% ~ 5%.
Adopt said ratio, make the B value of described thermistor accomplish 2800 ~ 2900K, resistivity can accomplish 10 ~ 20 (k Ω .mm) simultaneously.
The manufacture method of above-mentioned negative tempperature coefficient thermistor, the method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight, then add ethanol, adhesive, dispersant be made into slurry, wherein metal oxide: ethanol: adhesive: weight ratio=1:0.3 ~ 0.5:0.5 ~ 0.7:0.05 ~ 0.1 of dispersant;
2) flow casting molding, the slurry configured is placed in vacuum tank, conduit is adopted to absorb water on carrier film by slurry, obtain the film that thickness is 20 ~ 70 μm, then annular transmits and dries each layer through baking oven with 30 ~ 60 DEG C, circulation make to design the number of plies and thickness, after oven dry through separation, cutting, binder removal, sinter to obtain ceramics;
3) electrode processed, by the ceramics coated on both sides silver electrode sintered;
4) scribing, is divided into required size according to resistance demand; Namely obtaining described electricalresistivityρ is 10 ~ 20 (k Ω .mm), and material constant B is the thermistor of 2800 ~ 2900K.
Described adhesive is electronic ceramic vinyl modified adhesive.Preferred adhesive CK24 in the present invention.
Beneficial effect: compared with prior art, advantage of the present invention is: 1) it is linearly better, is easily applied in thermometric industry; 2) metal oxide adopts this formula can accomplish the formula combination of high value, low B value: electricalresistivityρ is 10 ~ 20 (k Ω .mm), and material constant B is 2800 ~ 2900K; 3) can use in wide temperature range, can use when high and low temperature simultaneously; 4) particular client can be met use, in order to avoid need series resistance in high temperature section because resistance is more weak compared with small-signal.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvement, these improvement also should be considered as protection scope of the present invention.
Embodiment 1: a kind of high-resistance low-B-value negative temperature coefficient thermistor, makes primarily of metal oxide and solvent, and described metal oxide comprises the composition of following percentage by weight: Mn
2o
320%, Ni
2o
350%, Fe
2o
310%, CuO 15%, Al
2o
31.5%, MgO 3.5%.
The manufacture method of above-mentioned high-resistance low-B-value negative temperature coefficient thermistor, the method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight, then add ethanol, adhesive C K24, dispersant be made into slurry, wherein metal oxide: ethanol: adhesive: the weight ratio=1:0.35:0.57:0.06 of dispersant; Adhesive C K24 is commercially available prod; CK24 is a kind of electronic ceramic vinyl modified adhesive; Dispersant adopts model to be the dispersant of BYK110.
2) flow casting molding, the slurry configured is placed in vacuum tank, conduit is adopted to absorb water on carrier film by slurry, obtain the film that thickness is 20 ~ 70 μm, then annular transmits and dries each layer through baking oven with 30 ~ 60 DEG C, circulation make to design the number of plies and thickness, after oven dry through separation, cutting, binder removal, sinter to obtain ceramics;
3) electrode processed, by the ceramics coated on both sides silver electrode sintered;
4) scribing, is divided into required size according to resistance demand; Namely above-mentioned high-resistance low-B-value negative temperature coefficient thermistor is obtained.
After testing, the material constant B of this thermistor is 2800 ~ 2900K, and electricalresistivityρ is 10 ~ 20 (k Ω .mm).
Detect: resistivity algorithms: ρ=RS/T
In formula: the resistance that R:NTC chip (measuring accuracy+/ 0.02 DEG C) at 25 DEG C of temperature records
The area of S:NTC chip: long × wide
The thickness of T:NTC chip
B value-based algorithm: B=(T1*T2/ (T2-T1)) * ㏑ (R1/R2)
T1/T2 is generally 25/85, or 25/50, or 25/100.
Resistance value during R1=temperature T1
Resistance value during R2=temperature T2
T1=298.15K(273.15+25℃)
T2=323.15K(273.15+50℃)
Can use in wide temperature range, can use when high and low temperature, serviceability temperature scope :-60 ~ 200 DEG C simultaneously.
Embodiment 2: substantially the same manner as Example 1, difference is the proportioning of the composition of metal oxide, metal oxide and solvent, specific as follows: metal oxide comprises the composition of following percentage by weight: Mn
2o
310%, Ni
2o
365%, Fe
2o
310%, CuO 10%, Al
2o
30.5%, MgO 4.5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.3:0.5:0.05 of dispersant.
After testing, the material constant B of this thermistor is 2800 ~ 2900K, and electricalresistivityρ is 10 ~ 20 (k Ω .mm).
Embodiment 3: substantially the same manner as Example 1, difference be the composition of metal oxide and metal oxide and
The proportioning of solvent, specific as follows: metal oxide comprises the composition of following percentage by weight: Mn
2o
330%, Ni
2o
340%, Fe
2o
315%, CuO 12%, Al
2o
32%, MgO 1%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.4:0.5:0.07 of dispersant.
After testing, the material constant B of this thermistor is 2800 ~ 2900K, and electricalresistivityρ is 10 ~ 20 (k Ω .mm).
Embodiment 4: substantially the same manner as Example 1, difference is the composition of metal oxide and the proportioning of metal oxide and solvent, specific as follows: metal oxide comprises the composition of following percentage by weight: Mn
2o
319%, Ni
2o
340%, Fe
2o
325%, CuO 11%, Al
2o
32.5%, MgO 2.5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.5:0.7:0.1 of dispersant.
After testing, the material constant B of this thermistor is 2800 ~ 2900K, and electricalresistivityρ is 10 ~ 20 (k Ω .mm).
Embodiment 5: substantially the same manner as Example 1, difference is the composition of metal oxide and the proportioning of metal oxide and solvent, specific as follows: metal oxide comprises the composition of following percentage by weight: Mn
2o
310%, Ni
2o
343%, Fe
2o
310%, CuO 30%, Al
2o
32%, MgO 5%.
Metal oxide: ethanol: adhesive: the weight ratio=1:0.3:0.6:0.08 of dispersant.
After testing, the material constant B of this thermistor is 2800 ~ 2900K, and electricalresistivityρ is 10 ~ 20 (k Ω .mm).
Claims (3)
1. a negative tempperature coefficient thermistor, is made up of metal oxide and solvent, it is characterized in that,
Described metal oxide comprises the composition of following percentage by weight: Mn2O3 10% ~ 30%, Ni2O3 40% ~ 65%,
Fe2O3 10% ~ 25%, CuO 10% ~ 30%, Al2O3 0.5% ~ 2.5%, MgO 1% ~ 5%; The electricalresistivityρ of described thermistor is 10 ~ 12 (k Ω .mm), and material constant B is 2800 ~ 2900K.
2. according to the manufacture method of negative tempperature coefficient thermistor described in claim 1, it is characterized in that, the method comprises the steps:
1) ceramic size preparation: the composition of above-mentioned each metal oxide is mixed according to percentage by weight, then add ethanol, adhesive, dispersant be made into slurry, wherein metal oxide: ethanol: adhesive: weight ratio=1:0.3 ~ 0.5:0.5 ~ 0.7:0.05 ~ 0.1 of dispersant;
2) flow casting molding, the slurry configured is placed in vacuum tank, conduit is adopted to absorb water on carrier film by slurry, obtain the film that thickness is 20 ~ 70 μm, then annular transmits and dries each layer through baking oven with 30 ~ 60 DEG C, circulation make to design the number of plies and thickness, after oven dry through separation, cutting, binder removal, sinter to obtain ceramics;
3) electrode processed, by the ceramics coated on both sides silver electrode sintered;
4) scribing, is divided into required size according to resistance demand; Namely obtaining described electricalresistivityρ is 10 ~ 20 (k Ω .mm),
Material constant B is the thermistor of 2800 ~ 2900K.
3. according to the manufacture method of negative tempperature coefficient thermistor described in claim 2, it is characterized in that, described adhesive is electronic ceramic vinyl modified adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181642.7A CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210181642.7A CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102693795A CN102693795A (en) | 2012-09-26 |
| CN102693795B true CN102693795B (en) | 2015-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210181642.7A Expired - Fee Related CN102693795B (en) | 2012-06-04 | 2012-06-04 | Negative temperature coefficient thermistor |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106698528B (en) * | 2017-01-25 | 2017-12-12 | 中国科学院新疆理化技术研究所 | A kind of core shell structure composite oxide material and its production and use |
| CN109133901A (en) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | Thermistor containing iron series and preparation method thereof |
| JP7268393B2 (en) * | 2019-02-22 | 2023-05-08 | 三菱マテリアル株式会社 | Thermistor manufacturing method |
| CN112811891B (en) * | 2020-12-26 | 2022-08-02 | 重庆材料研究院有限公司 | Spinel phase high-entropy thermistor material and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
| CN1326198A (en) * | 2000-05-25 | 2001-12-12 | 列特龙株式会社 | Spinel ferrite thermal sensitive resistance component with negative temperature coefficient |
| CN1405798A (en) * | 2002-11-06 | 2003-03-26 | 祝翌 | Chip-type negative temperature coefficient thermistor and its manufacturing method by pure wet method |
| CN101127266A (en) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | High evenness negative temperature coefficient heat-sensitive resistance material and its preparation method |
-
2012
- 2012-06-04 CN CN201210181642.7A patent/CN102693795B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661094A (en) * | 1994-06-14 | 1997-08-26 | Siemens Matsushita Gmbh & Co. Kg | Sintered ceramic for high-stability thermistors and method for production thereof |
| CN1326198A (en) * | 2000-05-25 | 2001-12-12 | 列特龙株式会社 | Spinel ferrite thermal sensitive resistance component with negative temperature coefficient |
| CN1405798A (en) * | 2002-11-06 | 2003-03-26 | 祝翌 | Chip-type negative temperature coefficient thermistor and its manufacturing method by pure wet method |
| CN101127266A (en) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | High evenness negative temperature coefficient heat-sensitive resistance material and its preparation method |
Non-Patent Citations (1)
| Title |
|---|
| 热敏材料对NTC厚膜热敏电阻电学参数的影响;沈波，翟继卫，妥万禄，武明堂;《功能材料》;19990225;第30卷(第1期);109-110 * |
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| CN102693795A (en) | 2012-09-26 |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
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| CB02 | Change of applicant information |
Address after: 212400 Zhenjiang City, Jiangsu province Jurong City Zhang Miao Jurong Industrial Zone Boyuan Electronic Co. Ltd. Applicant after: Jurongshi BOYUAN Electronics CO., Ltd. Address before: 212400 Zhenjiang City, Jiangsu province Jurong Boyuan Electronic Co. Ltd. Applicant before: Jurongshi BOYUAN Electronics CO., Ltd. |
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| C14 | Grant of patent or utility model | ||
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Inventor after: Chen Hongbing Inventor before: Wang Meifeng |
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| CB03 | Change of inventor or designer information | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170804 Address after: 528000 Guangdong Province, Foshan city Shunde District Lunjiao teach Xin Min Cun Wei Hui Guang Zhu Lu Guang Zhu Lu Wai East Hefeng No. six (No. 10, two floor) Patentee after: Shunde Foshan Crystal Electronics Co., Ltd. Address before: 212400 Zhenjiang City, Jiangsu province Jurong City Zhang Miao Jurong Industrial Zone Boyuan Electronic Co. Ltd. Patentee before: Jurongshi BOYUAN Electronics CO., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20180604 |
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| CF01 | Termination of patent right due to non-payment of annual fee |