CN102683597B - White light electroluminescent device and preparation method thereof - Google Patents
White light electroluminescent device and preparation method thereof Download PDFInfo
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- CN102683597B CN102683597B CN201110055688.XA CN201110055688A CN102683597B CN 102683597 B CN102683597 B CN 102683597B CN 201110055688 A CN201110055688 A CN 201110055688A CN 102683597 B CN102683597 B CN 102683597B
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Abstract
The invention is applicable to the technical field of electroluminescence and provides a white light electroluminescent device and a preparation method thereof. The white light electroluminescent device comprises an anode, a cathode and a light-emitting part between the anode and the cathode, wherein the light-emitting part comprises a first light-emitting unit, a second light-emitting unit and a charge generation layer which are stacked, wherein the charge generation layer is arranged between the first light-emitting unit and the second light-emitting unit; the first light-emitting unit comprises a first blue light light-emitting layer and a red light light-emitting structure which are stacked; and the second light-emitting unit comprises a second blue light light-emitting unit and a green light light-emitting unit which are stacked. The white light electroluminescent device has the beneficial effects that the light emitting is stable through forming a quantum trap; and by using a beryllium complex as a doping subject, the starting voltage of the device is reduced.
Description
Technical field
The invention belongs to electroluminescent technology field, particularly relate to white-light electroluminescence device and preparation method thereof.
Background technology
Existing white electroluminescence device, when voltage raises, photochromic meeting that is red or green emitting changes, cause white electroluminescence device can not send the white light of pure color, this is because the movement of the exciton recombination region of material, light-emitting zone is made to there occurs change, caused by the luminous efficiency reduction of luminescent material.Meanwhile, the utilance of existing electroluminescent device to fluorescence triplet state is lower, makes the luminous efficiency of electroluminescent device not high.
Summary of the invention
In view of this, the embodiment of the present invention provides the white-light electroluminescence device that a kind of stable luminescence, luminous efficiency are high.
The present invention is achieved in that
A kind of white-light electroluminescence device, comprise anode, negative electrode and the luminous component between this anode and negative electrode, this luminous component comprises the first mutually stacked luminescence unit, second luminescence unit and this first luminescence unit, charge generating layers between second luminescence unit, this first luminescence unit comprises the first mutually stacked blue light-emitting and red light-emitting structure, this red light-emitting structure comprises the first mutually stacked barrier layer, second barrier layer and this first barrier layer, red light luminescent layer between second barrier layer, this second luminescence unit comprises the second mutually stacked blue light-emitting and green luminescence structure, this green luminescence structure comprises the 3rd mutually stacked barrier layer, 4th barrier layer and the 3rd barrier layer, green light emitting layer between 4th barrier layer, the material of this first blue light-emitting, the second blue light-emitting is the mixture of blue-light fluorescent material and hole mobile material, the material of this first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is hole mobile material or electron transport material, the material of this red light luminescent layer is the mixture of ruddiness phosphor material and beryllium complex, the material of this green light emitting layer is the mixture of green glow phosphor material and beryllium complex, the material of this charge generating layers is electric charge generating material.
The embodiment of the present invention provides above-mentioned white-light electroluminescence device preparation method further, comprises the steps:
By blue-light fluorescent material and hole mobile material mixing, obtain the first mixture, this first mixture is prepared, formed the first blue light-emitting on transparent anode;
Hole mobile material is prepared, formed the first barrier layer on this first blue light-emitting;
By ruddiness phosphor material and the mixing of beryllium complex, obtain the second mixture, this second mixture is prepared on this first barrier layer, form red light luminescent layer;
Hole mobile material is prepared, formed the second barrier layer on this red light luminescent layer;
Electric charge generating material is prepared on this second barrier layer, forms charge generating layers;
By blue-light fluorescent material and hole mobile material mixing, obtain the 3rd mixture, the 3rd mixture is prepared, formed the second blue light-emitting on this charge generating layers;
Hole mobile material is prepared on this second blue light-emitting, forms the 3rd barrier layer;
By green glow phosphor material, the mixing of beryllium complex, obtain 4 mixture, this 4 mixture is prepared on this 3rd barrier layer, form green light emitting layer;
Hole mobile material is prepared on this green light emitting layer, forms the 4th barrier layer;
Metal material is prepared on the 4th barrier layer, forms negative electrode, obtain embodiment of the present invention white-light electroluminescence device.
Embodiment of the present invention white-light electroluminescence device, by adopting laminated construction, the triplet state achieved in blue phosphor luminescent layer is utilized by ruddiness or green light emitting layer on the one hand, and luminous efficiency is improved greatly, on the other hand, laminated construction makes be significantly improved the useful life of device; Quantum trap is formed by the first barrier layer and the second barrier layer, the 3rd barrier layer and the 4th barrier layer, hole is made to be limited in red light-emitting structure and green luminescence structure, limit the light-emitting zone of ruddiness and green glow, achieve the stabilized illumination of ruddiness and green glow, thus ensure that the stabilized illumination of white-light electroluminescence device; By using beryllium complex as doped body in red light luminescent layer and blue light-emitting, because the energy gap of beryllium complex is lower, to make in red light luminescent layer and blue light-emitting energy gap difference between luminescent material and beryllium complex less, achieve the reduction of device starting resistor.
Accompanying drawing explanation
Fig. 1 is the integrated machine composition of the white-light electroluminescence device that the embodiment of the present invention provides;
Fig. 2 is embodiment of the present invention white-light electroluminescence device structure chart;
Fig. 3 is the energy diagram of each layer of white-light electroluminescence device first luminescence unit that the embodiment of the present invention provides;
Fig. 4 is the energy diagram of each layer of white-light electroluminescence device second luminescence unit that the embodiment of the present invention provides;
Fig. 5 is the white-light electroluminescence device luminous intensity prepared of the embodiment of the present invention and comparative example and voltage relationship comparison diagram.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The embodiment of the present invention provides a kind of white-light electroluminescence device, comprise anode, negative electrode and the luminous component between this anode and negative electrode, this luminous component comprises the first mutually stacked luminescence unit, second luminescence unit and this first luminescence unit, charge generating layers between second luminescence unit, this first luminescence unit comprises the first mutually stacked blue light-emitting and red light-emitting structure, this red light-emitting structure comprises the first mutually stacked barrier layer, second barrier layer and this first barrier layer, red light luminescent layer between second barrier layer, this second luminescence unit comprises the second mutually stacked blue light-emitting and green luminescence structure, this green luminescence structure comprises the 3rd mutually stacked barrier layer, 4th barrier layer and the 3rd barrier layer, green light emitting layer between 4th barrier layer, the material of this first blue light-emitting, the second blue light-emitting is the mixture of blue-light fluorescent material and hole mobile material, the material of this first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is hole mobile material or electron transport material, the material of this red light luminescent layer is the mixture of ruddiness phosphor material and beryllium complex, the material of this green light emitting layer is the mixture of green glow phosphor material and beryllium complex, the material of this charge generating layers is electric charge generating material.
Refer to Fig. 1, Fig. 1 shows the overall structure figure of embodiment of the present invention white-light electroluminescence device, this white-light electroluminescence device comprises anode, negative electrode and the luminous component between anode and negative electrode, and this luminous component comprises lamination 1 (the first luminescence unit), lamination 2 (the second luminescence unit) and the charge generating layers between this lamination one and lamination two;
Particularly, refer to Fig. 2, Fig. 2 shows the structure chart of a kind of execution mode of embodiment of the present invention white-light electroluminescence device, embodiment of the present invention white-light electroluminescence device comprises negative electrode 2, anode 1, and the luminous component 3 between this anode 1 and negative electrode 2, this luminous component 3 comprises the second luminescence unit 32, first luminescence unit 31, and this first luminescence unit, charge generating layers 33 between second luminescence unit, this first luminescence unit 31 comprises red light-emitting structure 312, first blue light-emitting 311, this red light-emitting structure 312 comprises the first mutually stacked barrier layer 3121 and the second barrier layer 3123, and this first barrier layer, red light luminescent layer 3122 between second barrier layer, this second luminescence unit 32 comprises green luminescence structure 322, second blue light-emitting 321, this green luminescence structure 322 comprises the 3rd mutually stacked barrier layer 3221 and the 4th barrier layer 3223, and the 3rd barrier layer, red light luminescent layer 3222 between the 4th barrier layer,
Particularly, in this first luminescence unit 31, the first blue light-emitting 311 is mutually stacked by this first barrier layer 3121 with red light-emitting structure 312; In this second luminescence unit 32, the second blue light-emitting 321 is mutually stacked by the 3rd barrier layer 3221 with green luminescence structure 322.By adopting laminated construction, the triplet state achieved in blue phosphor luminescent layer is utilized by ruddiness or green light emitting layer on the one hand, and luminous efficiency is improved greatly, and on the other hand, laminated construction makes be significantly improved the useful life of device.
Further, the first luminescence unit of embodiment of the present invention white-light electroluminescence device, the second luminescence unit also comprise hole functional layer and/or electronic work ergosphere.
Particularly, this hole functional layer refers to the functional layer with hole transport or hole injection for electroluminescent device, i.e. hole transmission layer and hole injection layer, and the hole functional layer in the embodiment of the present invention comprises hole injection layer and/or hole transmission layer; This electronic work ergosphere refers to the functional layer with electric transmission, stop or function of injecting for electroluminescent device, i.e. electron injecting layer, electronic barrier layer or electron transfer layer, in the embodiment of the present invention, electronic work ergosphere comprises electron injecting layer or/and electron transfer layer.
Containing this hole functional layer or/and the luminescence unit structure of electronic work ergosphere is as follows:
Hole injection layer/hole transmission layer/electronic barrier layer/the first or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron transfer layer/electron injecting layer; Or
Hole injection layer/hole transmission layer/the first or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron transfer layer/electron injecting layer; Or
Hole transmission layer/the first or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron transfer layer/electron injecting layer; Or
Hole injection layer/hole transmission layer/the first or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron transfer layer; Or
First or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron transfer layer/electron injecting layer; Or
Hole injection layer/hole transmission layer/electronic barrier layer/the first or the second blue light-emitting/ruddiness or green luminescence Rotating fields/electron injecting layer.
Particularly, the material of this hole injection layer is hole-injecting material, and hole-injecting material is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3), VO
x(mixture of vanadium dioxide and vanadic oxide) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 5-30nm;
Particularly, the material of this hole transmission layer is hole mobile material, hole mobile material is selected from N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine (TPD), 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA), 4,4 '-two (9-carbazole) biphenyl (CBP), N, N '-(1-naphthyl)-N; N '-diphenyl-4; 4 '-benzidine (NPB), 1,3,5-triphenylbenzene (TDAPB) or CuPc (CuPc); The thickness of hole transmission layer is 20-60nm;
Particularly, the material of this electronic barrier layer is hole mobile material, and this hole mobile material is identical with aforementioned, does not repeat to set forth at this;
Particularly, the material of this electron transfer layer is electron transport material, electron transport material is selected from 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (BPhen), 1,2,4-triazole derivative (as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ), the thickness of electron transfer layer is 20-60nm;
Particularly, the material of electron injecting layer is electron injection material, and electron injection material is selected from Cs
2cO
3, CsN
3, LiF, CsF, CaF
2, MgF
2, NaF.The thickness of electron injecting layer is 0.5-5nm.Preferably, the material LiF of electron injecting layer, thickness is 0.7nm;
Or this electron injecting layer is adulterated to mix with electron transport material by above-mentioned electron injection material and forms, and wherein electron injection material accounts for mixture quality than being 20-60%, and thickness is 20-60nm;
Particularly, this electric charge generating material is selected from:
(Alq
3: Mg)-WO
3, Al-Au, Al-WO
3-Ag, (Alq
3: Mg)-MoO
3, (Bphen:Li)-MoO
3or (Alq
3: Li)-(FeCl
3: NPB), the thickness of this charge generating layers is 10-40nm; This thickness can make charge generating layers obtain good conductivity and transmitance.
Particularly, the material of this first blue light-emitting, the second blue light-emitting is the mixture of blue-light fluorescent material and hole mobile material composition, and this blue-light fluorescent material is selected from Perylene (perylene), perylene derivative (TBPe), triphenylamine diphenyl ethylene derivatives (DPAVBi or DPAVB), dinaphthyl anthracene derivant (AND), triphenylamine connect naphthylethen derivative (BDAVBi) or styrene derivative (BCzVB or BCzVBi); This hole mobile material is identical with aforesaid, does not repeat to set forth at this; In this mixture, the mass percentage of blue-light fluorescent material is 1-20%, and the thickness of this first blue light-emitting, the second blue light-emitting is 5-30 nanometer; This thickness contributes to the higher exciton recombination probability of guarantee first blue light-emitting, the second blue light-emitting and stable exciton recombination region.
Particularly, the thickness of this first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is 3-20 nanometer, and material is hole mobile material or electron transport material, does not specifically limit.This hole mobile material, electron transport material are identical with aforementioned, do not repeat to set forth at this; Form quantum trap by the first barrier layer and the second barrier layer, make hole be limited in, in red light-emitting structure, limiting the light-emitting zone of ruddiness, achieve the stabilized illumination of ruddiness; Form quantum trap by the 3rd barrier layer and the 4th barrier layer, make hole be limited in, in green luminescence structure, limiting the light-emitting zone of green glow, achieve the stabilized illumination of green glow;
Particularly, the thickness of this red light luminescent layer is 3-15 nanometer, and this thickness contributes to the stability ensureing higher exciton recombination probability and exciton recombination region in red light luminescent layer.
Material is the mixture of ruddiness phosphor material and beryllium complex composition, and wherein, the mass percentage of this ruddiness phosphor material is 0.5-5%; This ruddiness phosphor material is selected from two (2-methyl-diphenylquinoxaline) (acetylacetone,2,4-pentanediones) and closes iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3); This beryllium complex is selected from fen yl pyridines beryllium (Bepp
2), 10-hydroxy benzo quinoline beryllium (BeBq
2), oxine beryllium (BeqQ
2), 2-methyl-oxine beryllium (BeMQ
2), oxine beryllium (BeQ
2) or 7-propyl group-8 oxyquinoline beryllium (BePrQ
2);
Particularly, the thickness of this green light emitting layer is 3-15 nanometer, and this thickness contributes to the stability ensureing higher exciton recombination probability and exciton recombination region in green light emitting layer.
Material is the mixture of green glow phosphor material and beryllium complex composition, and wherein, the mass percentage of green glow phosphor material is 1-10%, and this green glow phosphor material is selected from three (2-phenylpyridines) and closes iridium (Ir (ppy)
3) or acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy)
2(acac)), this beryllium complex is identical with aforementioned, does not repeat to set forth at this.
By using beryllium complex as doped body in red light luminescent layer and blue light-emitting, because the energy gap of beryllium complex is lower, to make in red light luminescent layer and blue light-emitting energy gap difference between luminescent material and beryllium complex less, achieve the reduction of device starting resistor, the useful life of device is extended; Meanwhile, because the energy gap between luminescent material and material of main part reduces, greatly reduce the energy of exciton loss in transmission, the luminous efficiency of device is increased.Refer to Fig. 3, Fig. 4, the energy diagram that Fig. 3 is the first luminescence unit energy diagram at different levels, Fig. 4 is the second luminescence unit energy diagram at different levels, Fig. 4 is embodiment of the present invention white-light electroluminescence device, as can be seen from Fig. 3,4, in, in first luminescence unit, the energy potential difference of the first barrier layer, the second barrier layer and red light luminescent layer is few, and energy potential difference is less; In second luminescence unit, the energy potential difference of the 3rd barrier layer, the 4th barrier layer and green light emitting layer is few, and energy potential difference is less, therefore achieves the reduction of device starting resistor.
Further, the lamination white-light electroluminescence device of the embodiment of the present invention also comprises anode and negative electrode, wherein, the material of anode is electro-conductive glass, and this electro-conductive glass is selected from indium tin oxide (ITO), fluorine doped tin oxide (FTO), mixes the zinc oxide (AZO) of aluminium or mix the zinc oxide (IZO) of indium; The material of negative electrode is metal material, is selected from silver, aluminium, magnesium silver alloy or gold, and thickness is 20-200nm.What effect does thickness aspect have?
Further, above-mentioned luminescence unit, hole functional layer, electronic work ergosphere, charge generating layers and negative electrode are by evaporation, sputtering or spin coating method preparation.
The beneficial effect of embodiment of the present invention white-light electroluminescence device:
1, embodiment of the present invention white-light electroluminescence device, by luminous component being divided into the first mutually stacked luminescence unit and the second luminescence unit, makes the luminosity of device, efficiency, useful life is significantly improved;
2, quantum trap is formed by the barrier layer in the first luminescence unit, hole is limited in red light luminescent layer, ruddiness phosphor material is caught fully to it, limits the light-emitting zone of exciton, luminescent spectrum is narrowed, achieves ruddiness stabilized illumination; Form quantum trap by the barrier layer in the second luminescence unit, hole is limited in green light emitting layer, green glow phosphor material is caught fully to it, limits the light-emitting zone of exciton, luminescent spectrum is narrowed, achieve the stabilized illumination of green glow; Due to the stabilized illumination of ruddiness, green glow, achieve the stabilized illumination of embodiment of the present invention white-light electroluminescence device white light;
3, in the embodiment of the present invention first luminescence unit, the first barrier layer is there is between first green light emitting layer and red light luminescent layer, this first barrier layer can also as the barrier layer between the first blue light-emitting red light luminescent layer, the singlet in the first blue light-emitting can either be prevented to be diffused in red light luminescent layer, in turn ensure that the triplet state in the first blue light-emitting can be diffused in red light luminescent layer, be re-used; In second luminescence unit, the 3rd barrier layer is there is between second blue light-emitting and green light emitting layer, 3rd barrier layer can also as the barrier layer between the second blue light-emitting and green light emitting layer, the singlet in the second blue light-emitting can either be prevented to be diffused in green light emitting layer, in turn ensure that the triplet state in the second blue light-emitting can be diffused in green light emitting layer, be re-used; Thus the luminous efficiency of device is improved greatly;
4, by using beryllium complex in red light luminescent layer, green light emitting layer, reduce ruddiness phosphor material, energy gap between green glow phosphor material and beryllium complex, the starting resistor achieving device reduces, and the useful life of device is extended; Meanwhile, because the energy gap between luminescent material and material of main part reduces, greatly reduce the energy of exciton loss in transmission, the luminous efficiency of device is increased.
The embodiment of the present invention provides above-mentioned white-light electroluminescence device preparation method further, comprises the steps:
Step S01, prepares the first luminescence unit:
By blue-light fluorescent material and hole mobile material mixing, obtain the first mixture, this first mixture is prepared, formed the first blue light-emitting on transparent anode;
Hole mobile material is prepared, formed the first barrier layer on this first blue light-emitting;
By ruddiness phosphor material and the mixing of beryllium complex, obtain the second mixture, this second mixture is prepared on this first barrier layer, form red light luminescent layer;
Hole mobile material is prepared, formed the second barrier layer on this red light luminescent layer;
Step S02, prepares charge generating layers:
Electric charge generating material is prepared on this second barrier layer, forms charge generating layers;
S03, prepares the second luminescence unit:
By blue-light fluorescent material and hole mobile material mixing, obtain the 3rd mixture, the 3rd mixture is prepared, formed the second blue light-emitting on this charge generating layers;
Hole mobile material is prepared on this second blue light-emitting, forms the 3rd barrier layer;
By green glow phosphor material, the mixing of beryllium complex, obtain 4 mixture, this 4 mixture is prepared on this 3rd barrier layer, form green light emitting layer;
Hole mobile material is prepared on this green light emitting layer, forms the 4th barrier layer;
Step S04, prepares negative electrode:
Metal material is prepared on the 4th barrier layer, forms negative electrode, obtain embodiment of the present invention white-light electroluminescence device.
Particularly, in embodiment of the present invention preparation method, also comprise the preparation process of the functional layers such as hole transmission layer, hole injection layer, electronic barrier layer, electron injecting layer, electron transfer layer, the preparation of this functional layer, according to the structure of aforesaid embodiment of the present invention white-light electroluminescence device, adopt evaporation, spin coating or sputtering method preparation, specifically do not limit; The material of hole transmission layer, hole injection layer, electronic barrier layer, electron injecting layer, electron transfer layer is identical with aforementioned, does not repeat to set forth at this;
Particularly, this first blue light-emitting, the second blue light-emitting; First barrier layer, the second barrier layer, the 3rd barrier layer and the 4th barrier layer; Charge generating layers; Red light luminescent layer; Green light emitting layer and negative electrode identical with aforementioned, this do not repeat set forth; This first blue light-emitting, the second blue light-emitting; First barrier layer, the second barrier layer, the 3rd barrier layer and the 4th barrier layer; Charge generating layers; Red light luminescent layer; Green light emitting layer and negative electrode adopt evaporation, sputtering or spin coating method preparation, specifically do not limit;
Particularly, this electric charge generating material, anode, negative electrode are identical with aforementioned, do not repeat to set forth at this.
Embodiment of the present invention preparation method, simple to operate, with low cost, formation efficiency is high, is suitable for industrial applications.
Below in conjunction with specific embodiment, above-mentioned white-light electroluminescence device preparation method is described in detail:
Embodiment one
Prepare the first luminescence unit:
Evaporation, formation MoO on anode ito glass
3hole injection layer, thickness is 10nm;
Evaporation, formation NPB hole transmission layer over the hole-transporting layer, thickness is 40nm;
Mixed by BczVBi and TCTA, obtain the first mixture, wherein the mass percentage of BczVBi is 10%, over the hole-transporting layer by this first mixture evaporation, to form thickness be first blue light-emitting of 5nm;
Evaporation, formation TPBi first barrier layer on this first blue light-emitting, thickness is 5nm;
By Ir (MDQ)
2and BeBq (acac)
2be mixed to get the second mixture; Wherein, Ir (MDQ)
2(acac) weight percentage is 1%, by this second mixture on this first barrier layer evaporation, to form thickness be the red light luminescent layer of 10 nanometers;
Evaporation, formation TPBi second barrier layer on this red light luminescent layer, thickness is 5nm;
Evaporation Bphen electron transfer layer on this second barrier layer, thickness is 40nm;
Evaporation, formation electron injecting layer on this electron transfer layer, this electron injecting layer material is Bphen and CsCO
3mixture, wherein Bphen weight percentage is 40%, and the thickness of this electron injecting layer is 30nm;
Prepare charge generating layers:
Evaporation, formation Al layer on this electron injecting layer, evaporation, formation tungstic acid layer on this aluminium lamination, evaporation, formation silver layer on this tungstic acid layer, wherein this charge generating layers is divided into the thickness of aluminium lamination, tungstic acid layer, silver layer to be respectively 5 nanometers, 10 nanometers and 15nm;
Prepare the second luminescence unit:
Evaporation, formation MoO on this silver layer
3hole injection layer, thickness is 10nm;
Evaporation, formation NPB hole transmission layer over the hole-transporting layer, thickness is 40nm;
Mixed by BczVBi and TCTA, obtain the 3rd mixture, wherein the mass percentage of BczVBi is 10%, over the hole-transporting layer by the 3rd mixture evaporation, to form thickness be second blue light-emitting of 5nm;
Evaporation, formation TPBi the 3rd barrier layer on this second blue light-emitting, thickness is 5nm;
By Ir (ppy)
3and BeBq
2be mixed to get 4 mixture; Wherein, Ir (ppy)
3weight percentage be 7%, by this 4 mixture on the 3rd barrier layer evaporation, to form thickness be the green light emitting layer of 10 nanometers;
Evaporation, formation TPBi the 4th barrier layer on this green light emitting layer, thickness is 5nm;
Evaporation Bphen electron transfer layer on the 4th barrier layer, thickness is 40nm;
Evaporation, formation electron injecting layer on this electron transfer layer, this electron injecting layer material is Bphen and CsCO
3mixture, wherein Bphen weight percentage is 40%, and the thickness of this electron injecting layer is 30nm;
Prepare negative electrode:
On this electron transfer layer evaporation, to form thickness be the Mg:Ag mixed layer of 150nm, on this mixed layer evaporation, form the Ag layer that thickness is 10nm, as negative electrode, obtain white-light electroluminescence device.
Embodiment two
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, the mass percentage of BczVBi is 5%; Ir (MDQ) in red light luminescent layer
2(acac) mass percentage is 0.5%, and the thickness of red light luminescent layer is 15 nanometers; Ir (ppy) in green light emitting layer
3mass percentage be 7%, the thickness of green light emitting layer is 13 nanometers.
Embodiment three
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, the mass percentage of BczVBi is 20%; Ir (MDQ) in red light luminescent layer
2(acac) mass percentage is 5%; Ir (ppy) in green light emitting layer
3mass percentage be 10%.
Embodiment four
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, the material of red light luminescent layer is Ir (piq)
3; The material of green light emitting layer is Ir (ppy)
2(acac).
Embodiment five
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, blue-light fluorescent material is AND; The material of red light luminescent layer is Ir (piq)
3; The material of green light emitting layer is Ir (ppy)
2(acac).
Embodiment six
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, the material of barrier layer is TAZ; The thickness of red light luminescent layer is 3 nanometers.
Embodiment seven
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, the material of barrier layer is BND; Beryllium complex is Bepp
2.
Embodiment eight
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, blue-light fluorescent material is Perylene, and weight percentage is 5%; The thickness of barrier layer is 10 nanometers, and charge generating layers is Al-WO
3-Ag.
Embodiment nine
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, the material of red light luminescent layer is Ir (piq)
2(acac); The material of green light emitting layer is Ir (ppy)
2(acac); In second luminescence unit, beryllium complex is Bepp
2, the thickness of green light emitting layer is 8 nanometers.
Embodiment ten
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, blue-light fluorescent material is DPAVBi; The material of the first barrier layer, the 3rd barrier layer is NPB, and the material of the second barrier layer, the 4th barrier layer is TAZ; In first blue light-emitting, hole mobile material is CBP, and in red light luminescent layer, beryllium complex is BeqQ
2.
Embodiment 11
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, blue-light fluorescent material is DPAVBi, and the thickness of blue light-emitting is 25 nanometers, and hole mobile material is CBP; In red light luminescent layer, beryllium complex is BePrQ
2; In green light emitting layer, beryllium complex is BeqQ
2.
Embodiment 12
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, hole mobile material is CBP, and the thickness of blue light-emitting is 30 nanometers; The material of the first barrier layer, the 3rd barrier layer is CBP, and the material of the second barrier layer, the 4th barrier layer is PBD.
Embodiment 13
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, the mass percentage of BczVBi is 1%, and hole mobile material is CBP; The material of the first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is CBP; Ir (MDQ) in red light luminescent layer
2(acac) mass percentage is 3%; Ir (ppy) in green light emitting layer
3mass percentage be 8%.
Embodiment 14
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, the thickness of the first blue light-emitting, the second blue light-emitting is 15 nanometers, and material is TBPe; The thickness of the first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is 10 nanometers; Ir (MDQ) in red light luminescent layer
2(acac) mass percentage is 2.5%, and the thickness of red light luminescent layer is 11 nanometers; Ir (ppy) in green light emitting layer
3mass percentage be 6%, the thickness of green light emitting layer is 15 nanometers.
Embodiment 15
Embodiment of the present invention white-light electroluminescence device preparation method is according to embodiment one, and wherein, in the first blue light-emitting, the second blue light-emitting, hole mobile material is TPD, and thickness is 8 nanometers; The material of the first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is TPD; Ir (MDQ) in red light luminescent layer
2(acac) mass percentage is 1.5%, and the thickness of red light luminescent layer is 7 nanometers; Ir (ppy) in green light emitting layer
3mass percentage be 1%, the thickness of green light emitting layer is 5 nanometers.
Comparative example
Embodiment of the present invention white-light electroluminescence device preparation method, according to embodiment one, wherein, does not have the first barrier layer, the second barrier layer in the first luminescence unit; The 3rd barrier layer, the 4th barrier layer is not had in second luminescence unit.
Refer to Fig. 5, Fig. 5 shows the embodiment of the present invention and relation comparison diagram between comparative example white-light electroluminescence device luminous intensity and voltage, and as can be seen from Fig. 5, when 10V, comparative example device brightness is 2450cd/cm
2, and the Tandem devices brightness of embodiment is 4816cd/cm
2, add one times nearly, and along with the rising of voltage, the luminance difference of comparative example and embodiment device increases gradually, this illustrates, the luminous efficiency of embodiment of the present invention white-light electroluminescence device is significantly improved.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a white-light electroluminescence device, comprises anode, negative electrode and the luminous component between described anode and negative electrode; Described luminous component comprises the charge generating layers between the first mutually stacked luminescence unit, the second luminescence unit and described first luminescence unit, the second luminescence unit; Described first luminescence unit comprises the first mutually stacked blue light-emitting and red light-emitting structure, and described red light-emitting structure comprises the first mutually stacked barrier layer, the second barrier layer and the red light luminescent layer between described first barrier layer and the second barrier layer; Described second luminescence unit comprises the second mutually stacked blue light-emitting and green luminescence structure, and described green luminescence structure comprises the 3rd mutually stacked barrier layer and the 4th barrier layer and the green light emitting layer between described 3rd barrier layer and the 4th barrier layer; The material of described first blue light-emitting and the second blue light-emitting is the mixture of blue-light fluorescent material and hole mobile material; The material of described first barrier layer, the second barrier layer, the 3rd barrier layer and the 4th barrier layer is hole mobile material or electron transport material; The material of described red light luminescent layer is the mixture of ruddiness phosphor material and beryllium complex; The material of described green light emitting layer is the mixture of green glow phosphor material and beryllium complex; The material of described charge generating layers is electric charge generating material.
2. white-light electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described first blue light-emitting, the second blue light-emitting is 5-30 nanometer; In described first blue light-emitting, the second blue light-emitting, the mass percentage of blue-light fluorescent material is 1%-20%.
3. white-light electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is 3-20 nanometer.
4. white-light electroluminescence device as claimed in claim 1, it is characterized in that, in described red light luminescent layer, the mass percentage of ruddiness phosphor material is 0.5-5%; The thickness of described red light luminescent layer is 3-15 nanometer.
5. white-light electroluminescence device as claimed in claim 1, it is characterized in that, in described green light emitting layer, the mass percentage of green glow phosphor material is 1-10%; The thickness of described green light emitting layer is 3-15 nanometer.
6. white-light electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described charge generating layers is 10-40 nanometer.
7. a white-light electroluminescence device preparation method, comprises the steps:
By blue-light fluorescent material and hole mobile material mixing, obtain the first mixture, described first mixture is prepared, formed the first blue light-emitting on transparent anode;
Hole mobile material or electron transport material are prepared, formed the first barrier layer on described first blue light-emitting;
By ruddiness phosphor material and the mixing of beryllium complex, obtain the second mixture, described second mixture is prepared on described first barrier layer, form red light luminescent layer;
Hole mobile material or electron transport material are prepared, formed the second barrier layer on described red light luminescent layer;
Electric charge generating material is prepared on described second barrier layer, forms charge generating layers;
By blue-light fluorescent material and hole mobile material mixing, obtain the 3rd mixture, described 3rd mixture is prepared, formed the second blue light-emitting on described charge generating layers;
Hole mobile material or electron transport material are prepared, formed the 3rd barrier layer on described second blue light-emitting;
By green glow phosphor material, the mixing of beryllium complex, obtain 4 mixture, described 4 mixture is prepared on described 3rd barrier layer, form green light emitting layer;
Hole mobile material or electron transport material are prepared, formed the 4th barrier layer on described green light emitting layer;
Metal material is prepared on described 4th barrier layer, forms negative electrode, obtain described white-light electroluminescence device.
8. white-light electroluminescence device preparation method as claimed in claim 7, it is characterized in that, the thickness of described first blue light-emitting, the second blue light-emitting is 5-30 nanometer; In described first blue light-emitting, the second blue light-emitting, the mass percentage of blue-light fluorescent material is 1%-20%.
9. white-light electroluminescence device preparation method as claimed in claim 7, it is characterized in that, the thickness of described first barrier layer, the second barrier layer, the 3rd barrier layer, the 4th barrier layer is 3-20 nanometer.
10. white-light electroluminescence device preparation method as claimed in claim 7, it is characterized in that, in described red light luminescent layer, the mass percentage of ruddiness phosphor material is 0.5-5%; The thickness of described red light luminescent layer is 3-15 nanometer; In described green light emitting layer, the mass percentage of green glow phosphor material is 1-10%; The thickness of described green light emitting layer is 3-15 nanometer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221215A (en) * | 1998-11-06 | 1999-06-30 | 吉林大学 | White-light electroluminescence device with organic multi-quantum pit structure |
| CN101241973A (en) * | 2007-02-08 | 2008-08-13 | 索尼株式会社 | Method for manufacturing organic electroluminescent element and method for manufacturing display |
| CN100487942C (en) * | 2002-03-26 | 2009-05-13 | 城户淳二 | Organic electroluminescent cell |
| CN101459224A (en) * | 2007-10-09 | 2009-06-17 | 三星电子株式会社 | White organic light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1221215A (en) * | 1998-11-06 | 1999-06-30 | 吉林大学 | White-light electroluminescence device with organic multi-quantum pit structure |
| CN100487942C (en) * | 2002-03-26 | 2009-05-13 | 城户淳二 | Organic electroluminescent cell |
| CN101241973A (en) * | 2007-02-08 | 2008-08-13 | 索尼株式会社 | Method for manufacturing organic electroluminescent element and method for manufacturing display |
| CN101459224A (en) * | 2007-10-09 | 2009-06-17 | 三星电子株式会社 | White organic light emitting device |
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