CN102683532A - 一种含有图形化dbr结构的衬底 - Google Patents
一种含有图形化dbr结构的衬底 Download PDFInfo
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- CN102683532A CN102683532A CN2011100585473A CN201110058547A CN102683532A CN 102683532 A CN102683532 A CN 102683532A CN 2011100585473 A CN2011100585473 A CN 2011100585473A CN 201110058547 A CN201110058547 A CN 201110058547A CN 102683532 A CN102683532 A CN 102683532A
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441202A (zh) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | 具有图形化DBR结构的GaN衬底及其制备方法 |
CN104218129A (zh) * | 2014-09-24 | 2014-12-17 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104241478A (zh) * | 2014-09-24 | 2014-12-24 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269479A (zh) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269482A (zh) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104952991A (zh) * | 2014-03-25 | 2015-09-30 | 茂邦电子有限公司 | 覆晶式发光二极管及其制造方法以及其覆晶式封装结构 |
CN105957928A (zh) * | 2016-05-31 | 2016-09-21 | 华灿光电股份有限公司 | 一种谐振腔发光二极管及其制造方法 |
CN107078191A (zh) * | 2014-10-29 | 2017-08-18 | 欧司朗光电半导体有限公司 | 光电子半导体芯片 |
TWI605616B (zh) * | 2015-08-12 | 2017-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
CN108598232A (zh) * | 2018-01-19 | 2018-09-28 | 浙江大学 | 一种提高GaN基LED发光效率的蓝宝石图形衬底结构 |
CN111969002A (zh) * | 2020-08-28 | 2020-11-20 | 上海大学 | 一种超清柔性发光显示器及其制备方法 |
CN112820806A (zh) * | 2020-12-25 | 2021-05-18 | 福建晶安光电有限公司 | 一种图形衬底及其制作方法以及led结构及其制作方法 |
Citations (5)
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CN101471404A (zh) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | 提高芯片出光效率的方法及蓝宝石图形衬底的制备方法 |
CN101540361A (zh) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 硅衬底上生长的铝镓铟磷led外延片及其制备方法 |
US20090267092A1 (en) * | 2006-03-10 | 2009-10-29 | Matsushita Electric Works, Ltd. | Light-emitting device |
CN101645482A (zh) * | 2008-08-05 | 2010-02-10 | 夏普株式会社 | 氮化物半导体发光元件及其制造方法 |
CN101740677A (zh) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | 图形化衬底的GaN基LED外延片及该外延片的制备方法 |
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2011
- 2011-03-11 CN CN201110058547.3A patent/CN102683532B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20090267092A1 (en) * | 2006-03-10 | 2009-10-29 | Matsushita Electric Works, Ltd. | Light-emitting device |
CN101471404A (zh) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | 提高芯片出光效率的方法及蓝宝石图形衬底的制备方法 |
CN101645482A (zh) * | 2008-08-05 | 2010-02-10 | 夏普株式会社 | 氮化物半导体发光元件及其制造方法 |
CN101740677A (zh) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | 图形化衬底的GaN基LED外延片及该外延片的制备方法 |
CN101540361A (zh) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 硅衬底上生长的铝镓铟磷led外延片及其制备方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441202A (zh) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | 具有图形化DBR结构的GaN衬底及其制备方法 |
CN104952991A (zh) * | 2014-03-25 | 2015-09-30 | 茂邦电子有限公司 | 覆晶式发光二极管及其制造方法以及其覆晶式封装结构 |
CN104269482B (zh) * | 2014-09-24 | 2017-03-01 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104241478B (zh) * | 2014-09-24 | 2017-03-22 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269482A (zh) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104241478A (zh) * | 2014-09-24 | 2014-12-24 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269479A (zh) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269479B (zh) * | 2014-09-24 | 2017-01-25 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104218129A (zh) * | 2014-09-24 | 2014-12-17 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
US10079329B2 (en) | 2014-10-29 | 2018-09-18 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
CN107078191A (zh) * | 2014-10-29 | 2017-08-18 | 欧司朗光电半导体有限公司 | 光电子半导体芯片 |
TWI605616B (zh) * | 2015-08-12 | 2017-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
US10553753B2 (en) | 2015-08-12 | 2020-02-04 | Good Mass International Co., Ltd. | Patterned substrate for light emitting diode |
CN105957928A (zh) * | 2016-05-31 | 2016-09-21 | 华灿光电股份有限公司 | 一种谐振腔发光二极管及其制造方法 |
CN108598232A (zh) * | 2018-01-19 | 2018-09-28 | 浙江大学 | 一种提高GaN基LED发光效率的蓝宝石图形衬底结构 |
CN108598232B (zh) * | 2018-01-19 | 2024-05-10 | 浙江大学 | 一种提高GaN基LED发光效率的蓝宝石图形衬底结构 |
CN111969002A (zh) * | 2020-08-28 | 2020-11-20 | 上海大学 | 一种超清柔性发光显示器及其制备方法 |
CN112820806A (zh) * | 2020-12-25 | 2021-05-18 | 福建晶安光电有限公司 | 一种图形衬底及其制作方法以及led结构及其制作方法 |
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Effective date of registration: 20151111 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee after: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Optoelectronics Co.,Ltd. |
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Effective date of registration: 20200921 Address after: 215200 creation road, seven Du Town, Wujiang District, Suzhou, Jiangsu Patentee after: JIANGSU XINDA COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. |
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Granted publication date: 20150218 |