CN102683492B - 双面背接触晶体硅太阳能电池的制备方法 - Google Patents
双面背接触晶体硅太阳能电池的制备方法 Download PDFInfo
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- CN102683492B CN102683492B CN201210166621.8A CN201210166621A CN102683492B CN 102683492 B CN102683492 B CN 102683492B CN 201210166621 A CN201210166621 A CN 201210166621A CN 102683492 B CN102683492 B CN 102683492B
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CN201210166621.8A CN102683492B (zh) | 2012-05-27 | 2012-05-27 | 双面背接触晶体硅太阳能电池的制备方法 |
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CN201210166621.8A CN102683492B (zh) | 2012-05-27 | 2012-05-27 | 双面背接触晶体硅太阳能电池的制备方法 |
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CN102683492A CN102683492A (zh) | 2012-09-19 |
CN102683492B true CN102683492B (zh) | 2014-10-15 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103311366B (zh) * | 2013-05-31 | 2015-11-18 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅异质结太阳能电池的制备方法 |
CN105702800A (zh) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | 一种n型双面太阳电池及其制备方法 |
CN111129210A (zh) * | 2019-11-28 | 2020-05-08 | 南京纳鑫新材料有限公司 | 一种Ag/NH4HF2/H2O2/柠檬酸非硝酸单晶硅背抛方法 |
CN114188435B (zh) * | 2020-09-14 | 2024-01-12 | 一道新能源科技股份有限公司 | 一种太阳能电池制备方法及太阳能电池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1845345A (zh) * | 2006-03-14 | 2006-10-11 | 江苏林洋新能源有限公司 | 磷硼同时扩散制造高效硅太阳电池的方法 |
CN201112399Y (zh) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | 具有浓硼浓磷扩散结构的太阳能电池 |
CN201699033U (zh) * | 2010-03-30 | 2011-01-05 | 杨乐 | 双面受光型晶体硅太阳能电池 |
CN102222726A (zh) * | 2011-05-13 | 2011-10-19 | 晶澳(扬州)太阳能科技有限公司 | 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺 |
Family Cites Families (1)
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NL2000999C2 (nl) * | 2007-11-13 | 2009-05-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor. |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1845345A (zh) * | 2006-03-14 | 2006-10-11 | 江苏林洋新能源有限公司 | 磷硼同时扩散制造高效硅太阳电池的方法 |
CN201112399Y (zh) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | 具有浓硼浓磷扩散结构的太阳能电池 |
CN201699033U (zh) * | 2010-03-30 | 2011-01-05 | 杨乐 | 双面受光型晶体硅太阳能电池 |
CN102222726A (zh) * | 2011-05-13 | 2011-10-19 | 晶澳(扬州)太阳能科技有限公司 | 采用离子注入法制作交错背接触ibc晶体硅太阳能电池的工艺 |
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Address after: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee after: Artes sunshine Power Group Co. Ltd. Patentee after: Suzhou Canadian Solar Inc. Address before: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Suzhou Canadian Solar Inc. |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |