CN102683375A - Complementary metal oxide semiconductor (CMOS) image sensor and manufacturing method thereof - Google Patents
Complementary metal oxide semiconductor (CMOS) image sensor and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a complementary metal oxide semiconductor (CMOS) image sensor, which comprises an optical receiving array, a metal interconnection structure, a color filter array and a micro-lens array, wherein the optical receiving array serves as a photoelectric conversion device; the metal interconnection structure is arranged on the optical receiving array and comprises metal interconnection lines and a medium layer which is filled between the metal interconnection lines; the color filter array is arranged on the optical receiving array; the micro-lens array is arranged on the metal interconnection structure; the optical receiving array, the color filter array and the micro-lens array respectively comprise a plurality of units; the units of the color filter array are positioned in the medium layer of the metal interconnection structure and separated by the metal interconnection lines of the metal interconnection structure; and the units of the color filter array, the units of the optical receiving array and the units of the micro-lens array are respectively opposite to one another. Moreover, the invention also provides a manufacturing method of the CMOS image sensor. By adoption of the technical scheme provided by the invention, the problem of crosstalk of the CMOS image sensor can be solved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of cmos image sensor and preparation method thereof.
Background technology
The imageing sensor that comes into the market at present is divided into complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductor, CMOS) transducer and charge coupled cell (Charge-coupled Device, CCD) transducer.CMOS or ccd sensor have hundreds thousand of even millions of pixels usually so that light signal is converted into the signal of telecommunication, make that in imageing sensor the raw video with people or thing is converted into the signal of telecommunication.Volume is little, low in energy consumption, low cost and other advantages owing to having for CMOS or ccd image sensor, has been widely used at present in the various digital image equipment, for example: in the electronic equipments such as digital camera, DV.
Structure about cmos image sensor of the prior art; As shown in Figure 1; In Semiconductor substrate 10, be formed with photosensitive unit, for example light-sensitive element 11,11 ', are formed with interlayer dielectric layer 12 on it; A plurality of grid structures 13 are formed in the interlayer dielectric layer 12, and this grid structure 13 for example is used to form transportation electric charge circuit.Be formed with the multiple layer metal interconnecting construction on the interlayer dielectric layer 12.For for simplicity, Fig. 1 has illustrated two-layer, has omitted other layer.This double layer of metal interconnecting construction comprises: a plurality of intermetallic dielectric layer IMD1, IMD2 and the metal interconnecting wires M1, the M2 that are positioned at intermetallic dielectric layer IMD1, IMD2.After above-mentioned multilevel metal interconnection structure forms, form colour filter 14, microlens layer 15 afterwards above that successively.
Said structure in use, the light that colour filter 14 is propagated out is in that to get into light-sensitive element 11,11 ' preceding, owing to need through long propagation path, thereby in communication process, crosstalk phenomenon can occur.
The present invention proposes a kind of cmos image sensor and preparation method thereof to address the above problem.
Summary of the invention
The problem that the present invention solves is to propose a kind of new cmos image sensor and preparation method thereof, to solve the cross-interference issue of existing C mos image sensor.
For addressing the above problem, a kind of cmos image sensor of the present invention comprises:
Light-receiving array as photoelectric conversion device;
Place the metal interconnect structure on the said light-receiving array, said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires;
Place the color filter array on the said light-receiving array;
Place the microlens array on the said metal interconnect structure;
Wherein, Said light-receiving array, said color filter array, said microlens array comprise a plurality of unit respectively; And the unit of said color filter array is positioned at dielectric layer and each unit of said metal interconnect structure to be separated by the metal interconnecting wires of said metal interconnect structure, and the unit of the unit of said color filter array, said light-receiving array, the unit of microlens array are corresponding respectively.
Alternatively, the unit of said color filter array is a rectangle.
Alternatively, the unit of said color filter array is a wedge shape, the corresponding said light receiving unit in bottom that said wedge shape is less, the unit of the corresponding said microlens array in top that said wedge shape is bigger.
Alternatively, said color filter array is red, green, blue color filter array or green grass or young crops, purple, yellow filter array.
Alternatively, be formed with aluminium lamination on the sidewall of the unit of said color filter array.
Alternatively, the unit of said light-receiving array is a photodiode.
In addition, the present invention also provides a kind of manufacture method of cmos image sensor, comprising:
Semiconductor substrate is provided, in said Semiconductor substrate, forms light-receiving array as photoelectric conversion device;
Surface in said Semiconductor substrate forms metal interconnect structure, and said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires;
In said dielectric layer, form a plurality of grooves, the unit of the corresponding said light-receiving array of said each groove;
In said groove, insert filter material;
On said groove and said dielectric layer, form microlens array, corresponding said each groove in the unit of said microlens array.
Alternatively, the step that in said dielectric layer, forms a plurality of grooves adopts photoetching, dry etching.
Alternatively, behind a plurality of grooves of formation, also the sidewall at said groove forms aluminium lamination in said dielectric layer.
Alternatively, the step that forms aluminium lamination at the sidewall of said groove comprises: in the inside and the outside sputtered aluminum layer of said groove, utilize acid solution or dry etching to remove trench bottom and outside aluminium lamination.
Alternatively, in said groove, insert filter material and form bayer pattern.
Compared with prior art, the present invention has the following advantages:
Color filter array is arranged in the dielectric layer of metal interconnect structure and each unit is separated by the metal interconnecting wires of this metal interconnect structure; In addition; The unit three of the unit of the unit of said color filter array, said light-receiving array, microlens array is corresponding one by one; The light that makes the lenticule unit collect gets into its corresponding filter unit; In this filter unit, propagate the back and get into its corresponding light receiving unit, the light of so having avoided the filter unit is got into other light receiving unit by dielectric layer or metal layer reflection, has promptly avoided crosstalking.
In the possibility, be formed with aluminium lamination on the sidewall of the unit of color filter array, this aluminium lamination has served as the reflector, and further the propagation with light is limited in the filter unit.
In the possibility, the unit of color filter array is a wedge shape, the corresponding light receiving unit in bottom that wedge shape is less; The unit of the corresponding microlens array in top that wedge shape is bigger; The setting of this wedge shape with respect to rectangle, can be collected a large amount of light; Make the light that is limited in each filter unit become many, big thereby the light receiving unit electrical signal converted becomes.
Description of drawings
Fig. 1 is the cross section structure sketch map of existing C mos image sensor;
Fig. 2 is the cross section structure sketch map of the cmos image sensor of embodiment one;
Fig. 3 is the manufacture method flow chart of the cmos image sensor of Fig. 2;
Fig. 4 is the corresponding plan structure sketch map of intermediate structure of cmos image sensor in the flow process of Fig. 3;
Fig. 5 is another intermediate structure schematic cross-section of cmos image sensor in the flow process of Fig. 3;
Fig. 6 A to Fig. 6 C is three kinds of bayer pattern sketch mapes;
Fig. 7 is another intermediate structure schematic cross-section of cmos image sensor in the flow process of Fig. 3;
Fig. 8 is the cross section structure sketch map of the cmos image sensor of embodiment two;
Fig. 9 is the cross section structure sketch map of the cmos image sensor of embodiment three.
Embodiment
Described in background technology; The existing cmos image sensor that on multilevel metal interconnection structure, sets gradually colour filter 14, microlens layer 15 formation is prone to the cross-interference issue of signal; Analyze through the inventor: before the light of process colour filter is reaching electrooptical device; Can be through long path, during can repeatedly be reflected by dielectric layer material (for example silicon dioxide), metal level, thereby the propagation path of light is unrestricted; The light of corresponding a certain photoelectric conversion unit can shine other electrooptical device of adjacent area, promptly causes cross-interference issue.Based on this; The present invention proposes colour filter is arranged in the dielectric layer of metal interconnect structure; Thereby the light that makes the lenticule unit collect gets into its corresponding filter unit; In this filter unit, propagate the back and get into its corresponding light receiving unit, the light of so having avoided the filter unit is got into other light receiving unit by dielectric layer or metal layer reflection, has promptly avoided crosstalking.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.Because the present invention focuses on interpretation principle, therefore, drawing not in scale.
Embodiment one
Below in conjunction with the flow chart of the manufacture method of cmos image sensor shown in Figure 2 and this imageing sensor shown in Figure 3, introduce the cmos image sensor that this present embodiment one provides in detail, and the mechanism that solves cross-interference issue.
At first introduce manufacture method.In conjunction with Fig. 3 and shown in Figure 2, execution in step S11 provides Semiconductor substrate 20, in said Semiconductor substrate 20, forms the light-receiving array as photoelectric conversion device.
The material of the Semiconductor substrate 20 in the present embodiment can be silicon, germanium, silicon-germanium etc., but is not limited to above-mentioned material.The light-receiving array is the array that existing light-sensitive element forms as the unit; For example use more photodiode 21,21 '; Its core texture is a PN junction, compares with common diode, and structurally different is: in order to receive the incident rayed; The area of this PN junction is big as far as possible, and electrode area is as far as possible little.Its formation method comprises particularly: in substrate, dividing well region, carry out corresponding N type or P type ion and inject, is the function of active ions afterwards, need anneal with this injection ion of activation.Technology in this step repeats no more at this for existing technology.
Then execution in step S12 forms metal interconnect structure on the surface of said Semiconductor substrate 20, and said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires.
The metal interconnect structure that this step forms is used for the electric charge of light-receiving array conversion is migrated out, thereby needs to use charge transfer circuit, for example transports circuit.This transportation circuit comprises a plurality of grid structures 23, and grid structure 23 is formed in the interlayer dielectric layer 22.After grid structure 23 forms, then carry out the making of metal interconnect structure,, thereby in the present embodiment this part is briefly described because the technology that wherein relates to is prior art.At first referring to plan structure sketch map 4; Reach among this figure along the sectional structure Fig. 2 between the A-A; This metal interconnected line structure comprises: intermetallic dielectric layer IMD1, IMD2 and the metal interconnecting wires M1, the M2 that are positioned at intermetallic dielectric layer IMD1, IMD2; The multiple layer metal interconnection line can carry out repeatedly intermetallic dielectric layer IMD3 if desired ... And metal interconnecting wires M3 ... Making.
Execution in step S13 forms a plurality of rectangular channels in said dielectric layer then, the unit of the corresponding said light-receiving array of said each rectangular channel.
Dielectric layer in this step is meant: the no device between the surface of top layer to the Semiconductor substrate 20 of metal interconnect structure, the zone of no metal interconnecting wires comprise: the dielectric layer between interlayer dielectric layer 22, metal interconnected layer line.With the double layer of metal interconnection structure is example, and referring to shown in Figure 4, metal interconnecting wires M1, M2 are shown in dotted line, and grid structure 23 (not shown) is positioned under the metal interconnecting wires M1, and the zone of dielectric layer 24 that can form groove is shown in the solid line rectangle.
The method that this step forms rectangular channel can adopt photoetching, lithographic method.Particularly; On the top layer dielectric layer of metal interconnect structure, be coated with photoresist; After adopting mask plate to aim at,, form patterned photoresist through developing to this resist exposure; Adopting fluoro-gas CF4, C3F8 etc. afterwards is mask with patterned photoresist, and the surface that this dielectric layer 24 is etched to Semiconductor substrate 20 stops.To form three rectangular channels 241,242,243 is example, and this step is after being finished, and the structural section sketch map of formation is as shown in Figure 5.
Execution in step S14 inserts filter material in said groove afterwards.
Filter material in this step can be selected by polymethyl methacrylate (PMMA) or GMA (PGMA) painted or dyeing, or the look that dyes can be red, green, blue, or green grass or young crops, purple, Huang or other color.With red, green, blue three primary colors is example, and the pattern of formation can be bayer pattern.Particularly, referring to Fig. 6 A, green component accounts for 50%, and all the other two kinds of components respectively account for 25%; Among Fig. 6 B, blue component accounts for 50%, and all the other two kinds of components respectively account for 25%; Among Fig. 6 C, red component accounts for 50%, and all the other two kinds of components respectively account for 25%.
Execution in step S15 forms microlens array on said rectangular channel and said dielectric layer, corresponding said each rectangular channel in the unit of said microlens array.
Particularly; Surface deposition layer of silicon dioxide at rectangular channel that is filled filter material 241,242,243 and dielectric layer; TEOS for example, carry out then photoetching, etching technics form shown in Figure 7 stair-stepping protruding 25, each protruding 25 corresponding rectangular channel.Under 150-300 degree centigrade, make the unit 25 ' (with reference to shown in Figure 2) of these convexity 25 backflows then with the microlens array of formation certain curvature.
So far, the cmos image sensor in the present embodiment one has been made and has been finished.In conjunction with shown in Figure 2, this cmos image sensor comprises:
Light-receiving array as photoelectric conversion device;
Place the metal interconnect structure on the said light-receiving array, said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires;
Place the color filter array on the said light-receiving array;
Place the microlens array on the said metal interconnect structure;
Wherein, Said color filter array is positioned at dielectric layer and each unit of said metal interconnect structure to be separated by the metal interconnecting wires of said metal interconnect structure, and the unit of the unit of said color filter array, said light-receiving array, the unit of microlens array are corresponding respectively.
Embodiment two
Can find out that in the present embodiment one, owing to the rectangle that is shaped as of groove, thereby the unit of color filter array also is a rectangle.The inventor finds in practice, adopts the groove of the little wedge structure in a kind of bottom, and as shown in Figure 8, the filter unit of formation is compared with the filter unit of rectangle, and the ability that restriction light is propagated within it is better, thereby it is better to improve crosstalk effect.
Correspondingly, the manufacture method of the cmos image sensor of this step is roughly identical with embodiment one.Difference is that new step S13 ' is: in said dielectric layer, form a plurality of wedge-shaped slots, the unit of corresponding each the said light-receiving array in bottom that said each said wedge shape is less.
The zone of the dielectric layer in this step is identical with embodiment one, and forming wedge-shaped slot has several different methods, below enumerates two kinds.First kind: after forming rectangular channel, regulate the bias voltage of plasma apparatus, the etching angle of fluorine-containing plasma gas is changed, the rectangular channel opening part is handled enlarged openings.Second kind: select etching gas, make groove the gradient occur, also can form wedge-shaped slot to dielectric layer (silicon dioxide) etching selection ratio.
Embodiment three
The cmos image sensor of present embodiment three increases the reflector at the sidewall of groove on the basis of the cmos image sensor that embodiment one, two provides, further the propagation of light is limited in this filter unit.With the wedge-shaped slot is example, and the schematic cross-section of cmos image sensing that comprises reflector 26 is as shown in Figure 9.
Particularly, the sidewall in this reflector is an aluminium, also can be for realizing other material of reflection function.
Correspondingly, the manufacture method of the cmos image sensor of this step is roughly identical with embodiment one.Difference is; New step S13 " be: in said dielectric layer, form a plurality of rectangles or wedge-shaped slot; when being wedge-shaped slot, the unit of corresponding each the said light-receiving array in bottom that said each said wedge shape is less then; in the inside and the outside sputtered aluminum layer of said rectangle or wedge-shaped slot, utilizes acid solution or dry etching to remove trench bottom and outside aluminium lamination.
This acid can be selected sulfuric acid, hydrochloric acid etc., and dry etching gas can be fluoro-gas, also can adopt in the industry the existing technology to the etching of aluminium.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (11)
1. a cmos image sensor is characterized in that, comprising:
Light-receiving array as photoelectric conversion device;
Place the metal interconnect structure on the said light-receiving array, said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires;
Place the color filter array on the said light-receiving array;
Place the microlens array on the said metal interconnect structure;
Wherein, Said light-receiving array, said color filter array, said microlens array comprise a plurality of unit respectively; And the unit of said color filter array is positioned at dielectric layer and each unit of said metal interconnect structure to be separated by the metal interconnecting wires of said metal interconnect structure, and the unit of the unit of said color filter array, said light-receiving array, the unit of microlens array are corresponding respectively.
2. cmos image sensor according to claim 1 is characterized in that, the unit of said color filter array is a rectangle.
3. cmos image sensor according to claim 1 is characterized in that, the unit of said color filter array is a wedge shape, the corresponding said light receiving unit in bottom that said wedge shape is less, the unit of the corresponding said microlens array in top that said wedge shape is bigger.
4. cmos image sensor according to claim 1 is characterized in that, said color filter array is red, green, blue color filter array or green grass or young crops, purple, yellow filter array.
5. cmos image sensor according to claim 1 is characterized in that, is formed with aluminium lamination on the sidewall of the unit of said color filter array.
6. cmos image sensor according to claim 1 is characterized in that, the unit of said light-receiving array is a photodiode.
7. the manufacture method of a cmos image sensor is characterized in that, comprising:
Semiconductor substrate is provided, in said Semiconductor substrate, forms light-receiving array as photoelectric conversion device;
Surface in said Semiconductor substrate forms metal interconnect structure, and said metal interconnect structure comprises metal interconnecting wires and is filled in the dielectric layer between said metal interconnecting wires;
In said dielectric layer, form a plurality of grooves, the unit of the corresponding said light-receiving array of said each groove;
In said groove, insert filter material;
On said groove and said dielectric layer, form microlens array, corresponding said each groove in the unit of said microlens array.
8. manufacture method according to claim 7 is characterized in that, the step that in said dielectric layer, forms a plurality of grooves adopts photoetching, dry etching.
9. manufacture method according to claim 7 is characterized in that, behind a plurality of grooves of formation, also the sidewall at said groove forms aluminium lamination in said dielectric layer.
10. manufacture method according to claim 9 is characterized in that, the step that forms aluminium lamination at the sidewall of said groove comprises: in the inside and the outside sputtered aluminum layer of said groove, utilize acid solution or dry etching to remove trench bottom and outside aluminium lamination.
11. manufacture method according to claim 7 is characterized in that, in said groove, inserts filter material and forms bayer pattern.
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Application publication date: 20120919 |