CN102683315B - 滚镀四面无引脚封装结构及其制造方法 - Google Patents
滚镀四面无引脚封装结构及其制造方法 Download PDFInfo
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- CN102683315B CN102683315B CN201110387783.XA CN201110387783A CN102683315B CN 102683315 B CN102683315 B CN 102683315B CN 201110387783 A CN201110387783 A CN 201110387783A CN 102683315 B CN102683315 B CN 102683315B
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000005538 encapsulation Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
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- 239000010949 copper Substances 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- 229910052763 palladium Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000004904 shortening Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
- H01L21/4832—Etching a temporary substrate after encapsulation process to form leads
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110387783.XA CN102683315B (zh) | 2011-11-30 | 2011-11-30 | 滚镀四面无引脚封装结构及其制造方法 |
JP2014543744A JP2015503233A (ja) | 2011-11-30 | 2012-01-06 | バレルめっきクワッド・フラット・ノーリード(qfn)パッケージ構造及びその製造方法 |
PCT/CN2012/000022 WO2013078753A1 (en) | 2011-11-30 | 2012-01-06 | Barrel-plating quad flat no-lead(qfn) package structure and method for manufacturing the same |
US14/271,411 US9105622B2 (en) | 2011-11-30 | 2014-05-06 | Barrel-plating quad flat no-lead (QFN) packaging structures and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110387783.XA CN102683315B (zh) | 2011-11-30 | 2011-11-30 | 滚镀四面无引脚封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102683315A CN102683315A (zh) | 2012-09-19 |
CN102683315B true CN102683315B (zh) | 2015-04-29 |
Family
ID=46815017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110387783.XA Active CN102683315B (zh) | 2011-11-30 | 2011-11-30 | 滚镀四面无引脚封装结构及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9105622B2 (zh) |
JP (1) | JP2015503233A (zh) |
CN (1) | CN102683315B (zh) |
WO (1) | WO2013078753A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105281706B (zh) * | 2015-11-06 | 2018-05-25 | 江苏长电科技股份有限公司 | 一种声表面波滤波器封装结构及制造方法 |
CN105513976B (zh) * | 2015-12-02 | 2018-04-17 | 上海凯虹电子有限公司 | 半导体封装方法、封装体及封装单元 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101814482A (zh) * | 2010-04-30 | 2010-08-25 | 江苏长电科技股份有限公司 | 有基岛引线框结构及其生产方法 |
CN102005432A (zh) * | 2010-09-30 | 2011-04-06 | 江苏长电科技股份有限公司 | 四面无引脚封装结构及其封装方法 |
CN102403282A (zh) * | 2011-11-22 | 2012-04-04 | 江苏长电科技股份有限公司 | 有基岛四面无引脚封装结构及其制造方法 |
Family Cites Families (16)
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JP2781018B2 (ja) * | 1989-09-06 | 1998-07-30 | 新光電気工業株式会社 | 半導体装置およびその製造方法 |
EP1213754A3 (en) * | 1994-03-18 | 2005-05-25 | Hitachi Chemical Co., Ltd. | Fabrication process of semiconductor package and semiconductor package |
JP3522403B2 (ja) * | 1994-08-24 | 2004-04-26 | 富士通株式会社 | 半導体装置 |
JP3732266B2 (ja) * | 1996-01-10 | 2006-01-05 | 旭化成エレクトロニクス株式会社 | 微細厚膜接続基板とその製造方法 |
US6498099B1 (en) * | 1998-06-10 | 2002-12-24 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation |
US6451627B1 (en) * | 1999-09-07 | 2002-09-17 | Motorola, Inc. | Semiconductor device and process for manufacturing and packaging a semiconductor device |
JP2003158235A (ja) * | 2001-11-20 | 2003-05-30 | Mitsui High Tec Inc | 半導体装置の製造方法 |
JP2003332508A (ja) * | 2002-05-16 | 2003-11-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP4159431B2 (ja) * | 2002-11-15 | 2008-10-01 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2005158771A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7157791B1 (en) * | 2004-06-11 | 2007-01-02 | Bridge Semiconductor Corporation | Semiconductor chip assembly with press-fit ground plane |
CN101601133B (zh) * | 2006-10-27 | 2011-08-10 | 宇芯(毛里求斯)控股有限公司 | 部分图案化的引线框以及在半导体封装中制造和使用其的方法 |
US20110115069A1 (en) * | 2009-11-13 | 2011-05-19 | Serene Seoh Hian Teh | Electronic device including a packaging substrate and an electrical conductor within a via and a process of forming the same |
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