CN102682705B - Active matrix organic light emitting diode (AMOLED) pixel driving circuit - Google Patents
Active matrix organic light emitting diode (AMOLED) pixel driving circuit Download PDFInfo
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- CN102682705B CN102682705B CN201210183849.8A CN201210183849A CN102682705B CN 102682705 B CN102682705 B CN 102682705B CN 201210183849 A CN201210183849 A CN 201210183849A CN 102682705 B CN102682705 B CN 102682705B
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Abstract
The invention relates to an electronic circuit technology and particularly relates to an active matrix organic light emitting diode (AMOLED) pixel driving circuit. Six P type thin film transistors and a capacitor are built to form the circuit, the circuit has four signal input lines which are respectively a first scanning signal line, a second scanning signal line, a data signal line and a control signal line, and the circuit can offset threshold voltage Vth and external input voltage Vdd in the process of AMOLED driving by controlling the four input signal lines. The circuit has the advantages that an AMOLED circuit can be achieved, the threshold voltage Vth and the external input voltage Vdd are offset simultaneously, and the AMOLED display effect is improved effectively.
Description
Technical field
The present invention relates to electronic circuit technology, relate to specifically a kind of AMOLED pixel-driving circuit.
Background technology
AMOLED(active matrix organic light-emitting diode (AMOLED) panel) be called as display technique of future generation, current AMOLED pixel-driving circuit as shown in Figure 1: include OLED, capacitor C, the first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3, the 4th transistor T FT4, the 5th transistor T FT5 and the 6th transistor PTFT, wherein, the grid of the first transistor TFT1 connects the first scan signal line, source electrode connection data signal wire, drain electrode connects one end of capacitor C and the source electrode of transistor seconds TFT2, the grid of transistor seconds TFT2 connects the second scan signal line, the grid of the 3rd transistor T FT3 connects the first scan signal line, source electrode connects the drain electrode of the 4th transistor T FT4 and the source electrode of the 6th transistor PTFT, drain electrode connects the other end of capacitor C and the grid of the 6th transistor PTFT, the source electrode of the 5th transistor T FT5 connects the 6th drain electrode of transistor PTFT and the positive pole of Organic Light Emitting Diode, grid connects the first scan signal line, the source electrode of the 4th transistor T FT4 connects positive source Vdd, the drain electrode of transistor seconds TFT2, the 5th drain electrode of transistor T FT5 and the negative pole of Organic Light Emitting Diode are all connected power cathode Vss.
As shown in Figure 2, current AMOLED pixel-driving circuit specific works principle is: in the first scan signal line, the second scan signal line and data signal line input T (1) stage, the first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3 and the 4th all conductings of transistor T FT4, now capacitor C charging, A point voltage will approach Vdd; At T(2) stage, the first transistor TFT1, the 3rd transistor T FT3 and the 5th transistor T FT5 conducting, transistor seconds TFT2 and the 4th transistor T FT4 cut-off, now A point voltage will be by the 3rd transistor T FT3, the 6th transistor T FT6 and the 5th transistor T FT5 electric discharge, the bias voltage of needed grid to source electrode when voltage becomes transistorized threshold voltage Vth(threshold voltage Vth and refers to transistor turns), B point voltage is maintained data signal line voltage Vdata; At T(3) stage, the first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3, the 4th transistor T FT4 and the 5th transistor T FT5 all end, and this stage A, B two point voltages remain unchanged; At T(4) stage, the first transistor TFT1, the 3rd transistor T FT3 and the 5th transistor T FT5 cut-off, transistor seconds TFT2 and the 4th transistor T FT4 conducting, now Organic Light Emitting Diode is luminous, B point voltage becomes 0, the saltus step of A point voltage is to Vth+|Vdata|, thereby realizes the compensation of threshold voltage Vth.Although current AMOLED pixel-driving circuit has been realized the compensation of threshold voltage Vth, supply voltage Vdd has the loss of voltage along with cabling, makes the Vth of each pixel and Vdd is not of uniform size causes, and causes the decline of AMOLED display quality.
Summary of the invention
Technical matters to be solved by this invention, is exactly the deficiency for existing AMOLED pixel-driving circuit, proposes a kind of driving circuit that can simultaneously realize surge valve threshold voltage Vth and supply voltage Vdd, improves AMOLED screen display quality.
The present invention solves the problems of the technologies described above adopted technical scheme: AMOLED pixel-driving circuit, comprising: Organic Light Emitting Diode, electric capacity, a P type thin film transistor (TFT), the 2nd P type thin film transistor (TFT), the 3rd P type thin film transistor (TFT), the 4th P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT);
The grid of the one P type thin film transistor (TFT) connects the first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) and one end of electric capacity, the drain electrode of the 2nd P type thin film transistor (TFT) is connected with the source electrode of the 3rd P type thin film transistor (TFT), grid and the drain electrode of the 3rd P type thin film transistor (TFT) and the grid of the 6th P type thin film transistor (TFT) and the other end of electric capacity are connected, the grid of the 3rd P type thin film transistor (TFT) connects the second scan signal line, the grid of the grid of the 4th P type thin film transistor (TFT) and the 5th P type thin film transistor (TFT) is connected with control signal wire jointly, the source electrode connection data signal wire of the 4th P type thin film transistor (TFT), the drain electrode of the 5th P type thin film transistor (TFT) is connected with the source electrode of the 6th P type thin film transistor (TFT), the drain electrode of the 6th P type thin film transistor (TFT) is connected with the positive pole of Organic Light Emitting Diode, the drain electrode of the one P type thin film transistor (TFT), the negative pole of Organic Light Emitting Diode is all connected with power cathode, the source electrode of the 2nd P type thin film transistor (TFT), the source electrode of the 5th P type thin film transistor (TFT) is all connected with positive source, the 2nd P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT) have identical threshold voltage.
Beneficial effect of the present invention is that realization, can highly effective raising AMOLED display effect to AMOLED driving circuit surge valve threshold voltage Vth and outside input supply voltage Vdd simultaneously.
Accompanying drawing explanation
Fig. 1 is traditional AMOLED pixel-driving circuit schematic diagram;
Fig. 2 is traditional AMOLED pixel-driving circuit principle of work schematic diagram;
Fig. 3 is AMOLED pixel-driving circuit schematic diagram of the present invention;
Fig. 4 is AMOLED pixel-driving circuit principle of work schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
The present invention is directed to the deficiency of conventional art, propose a kind of novel AMOLED pixel-driving circuit, improve the display quality of AMOLED panel.With respect to conventional art, its improvement is: adopt the method for coupling DTFT, realize surge valve threshold voltage Vth and external input voltage Vdd simultaneously, thereby effectively improve the display effect of AMOLED.
As shown in Figure 3, AMOLED pixel-driving circuit in the present invention, includes OLED OLED, capacitor C, a P type thin film transistor (TFT) PTFT1, the 2nd P type thin film transistor (TFT) PTFT2, the 3rd P type thin film transistor (TFT) PTFT3, the 4th P type thin film transistor (TFT) PTFT4, the 5th P type thin film transistor (TFT) PTFT5 and the 6th P type thin film transistor (TFT) PTFT6, the grid of the one P type thin film transistor (TFT) PTFT1 connects the first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) PTFT4 and one end of capacitor C, the drain electrode of the 2nd P type thin film transistor (TFT) PTFT2 is connected with the source electrode of the 3rd P type thin film transistor (TFT) PTFT3, grid and the drain electrode of the 3rd P type thin film transistor (TFT) PTFT3 and the grid of the 6th P type thin film transistor (TFT) PTFT6 and the other end of capacitor C are connected, the grid of the 3rd P type thin film transistor (TFT) PTFT3 connects the second scan signal line, the grid of the grid of the 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5 is connected with control signal wire jointly, the source electrode connection data signal wire of the 4th P type thin film transistor (TFT) PTFT4, the drain electrode of the 5th P type thin film transistor (TFT) PTFT5 is connected with the source electrode of the 6th P type thin film transistor (TFT) PTFT6, the drain electrode of the 6th P type thin film transistor (TFT) PTFT6 is connected with the positive pole of Organic Light Emitting Diode OLED, the drain electrode of the one P type thin film transistor (TFT) PTFT1, the negative pole of Organic Light Emitting Diode OLED is all connected with power cathode VSS, the source electrode of the 2nd P type thin film transistor (TFT) PTFT2, the source electrode of the 5th P type thin film transistor (TFT) PTFT5 is all connected with positive source VDD.
Wherein the 2nd P type thin film transistor (TFT) PTFT2 and the 6th P type thin film transistor (TFT) PTFT6 mate pipe each other, have equal threshold voltage, their production location next-door neighbour in side circuit.
Describe principle of work of the present invention in detail below in conjunction with accompanying drawing 4: in sequential cycle T (1) stage, the first scan signal line is that low level, the second scan signal line are that high level, data signal line are that low level and control signal wire are high level, a now P type thin film transistor (TFT) PTFT1 conducting, the 3rd P type thin film transistor (TFT) PTFT3, the 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5 cut-off, capacitor C is communicated with voltage negative pole VSS, and therefore the B terminal voltage of capacitor C is 0, at T(2) stage, the first scan signal line is high level, the second scan signal line is low level, data signal line is that low level and control signal wire are high level, a now P type thin film transistor (TFT) PTFT1 cut-off, the 2nd P type thin film transistor (TFT) PTFT2, the 3rd P type thin film transistor (TFT) PTFT3 conducting, the 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5 cut-off, now positive source VDD by the 2nd P type thin film transistor (TFT) PTFT2 and the 3rd P type thin film transistor (TFT) PTFT3 to electric capacity input voltage, the A terminal voltage of capacitor C is: Va=Vdd+Vth, at T(3) stage, the first scan signal line is high level, the second scan signal line is high level, data signal line is that high level and control signal wire are low level, a now P type thin film transistor (TFT) PTFT1, the 3rd P type thin film transistor (TFT) PTFT3 cut-off, the 2nd P type thin film transistor (TFT) PTFT2, the 4th P type thin film transistor (TFT) PTFT4, the 5th P type thin film transistor (TFT) PTFT5 and the 6th P type thin film transistor (TFT) PTFT6 conducting, now capacitor C is communicated with data signal line, Vdata charges to capacitor C by the 4th P type thin film transistor (TFT) PTFT4, the B terminal voltage variable quantity of capacitor C is Vdata, now to hold voltage variety be thereupon Vdata to the A of capacitor C, the A terminal voltage control of capacitor C is by the luminous electric current of the 6th P type thin film transistor (TFT) PTFT6 driving OLED, now the A terminal voltage of capacitor C is Va=Vdata+Vth+Vdd, because the 2nd P type thin film transistor (TFT) PTFT2 and the 6th P type thin film transistor (TFT) PTFT6 mate pipe each other, their threshold voltage Vth equates, it is the voltage between grid and the source electrode of PTFT that the 6th P type thin film transistor (TFT) PTFT6 is had to Vgs-Vth=Vdata(Vgs), thereby threshold voltage Vth and the impact of supply voltage Vdd on OLED are eliminated, according to the OLED current formula I=K(Vgs-Vth that flows through)
2known, when realizing threshold voltage Vth and supply voltage Vdd, compensate after-current I by more stable, thereby effectively improve AMOLED display quality.
Claims (1)
1.AMOLED pixel-driving circuit, comprising: Organic Light Emitting Diode, electric capacity, a P type thin film transistor (TFT), the 2nd P type thin film transistor (TFT), the 3rd P type thin film transistor (TFT), the 4th P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT);
The grid of the one P type thin film transistor (TFT) connects the first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) and one end of electric capacity, the drain electrode of the 2nd P type thin film transistor (TFT) is connected with the source electrode of the 3rd P type thin film transistor (TFT), grid and the drain electrode of the 3rd P type thin film transistor (TFT) and the grid of the 6th P type thin film transistor (TFT) and the other end of electric capacity are connected, the grid of the 3rd P type thin film transistor (TFT) connects the second scan signal line, the grid of the grid of the 4th P type thin film transistor (TFT) and the 5th P type thin film transistor (TFT) is connected with control signal wire jointly, the source electrode connection data signal wire of the 4th P type thin film transistor (TFT), the drain electrode of the 5th P type thin film transistor (TFT) is connected with the source electrode of the 6th P type thin film transistor (TFT), the drain electrode of the 6th P type thin film transistor (TFT) is connected with the positive pole of Organic Light Emitting Diode, the drain electrode of the one P type thin film transistor (TFT), the negative pole of Organic Light Emitting Diode is all connected with power cathode, the source electrode of the 2nd P type thin film transistor (TFT), the source electrode of the 5th P type thin film transistor (TFT) is all connected with positive source, the 2nd P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT) have identical threshold voltage.
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| CN201210183849.8A CN102682705B (en) | 2012-06-06 | 2012-06-06 | Active matrix organic light emitting diode (AMOLED) pixel driving circuit |
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| CN201210183849.8A CN102682705B (en) | 2012-06-06 | 2012-06-06 | Active matrix organic light emitting diode (AMOLED) pixel driving circuit |
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| CN102682705B true CN102682705B (en) | 2014-05-28 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103246396B (en) | 2013-04-18 | 2016-03-30 | 北京京东方光电科技有限公司 | Touch display circuit structure and driving method, array base palte and display device |
| TWI548112B (en) | 2013-05-14 | 2016-09-01 | 友達光電股份有限公司 | Light emitting diode module |
| CN104537984B (en) * | 2013-05-21 | 2017-05-03 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
| CN103258501B (en) * | 2013-05-21 | 2015-02-25 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
| CN104021756B (en) | 2014-05-29 | 2017-04-12 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, organic light-emitting display panel and display apparatus |
| CN104021764B (en) | 2014-06-18 | 2016-06-29 | 上海和辉光电有限公司 | A kind of luminous signal control circuit |
| CN104167168B (en) * | 2014-06-23 | 2016-09-07 | 京东方科技集团股份有限公司 | Image element circuit and driving method thereof and display device |
| CN104091563B (en) | 2014-06-27 | 2016-03-09 | 京东方科技集团股份有限公司 | Image element circuit and driving method, organic electroluminescence display panel and display device |
| CN107103880B (en) * | 2017-06-16 | 2018-11-20 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method, array substrate and display device |
| CN107230453A (en) * | 2017-07-11 | 2017-10-03 | 深圳市华星光电半导体显示技术有限公司 | AMOLED pixel-driving circuits and AMOLED image element driving methods |
| CN113539171A (en) * | 2021-07-27 | 2021-10-22 | 深圳市华星光电半导体显示技术有限公司 | Display pixel circuit, display pixel circuit driving method and display panel |
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| CN1909039A (en) * | 1998-03-18 | 2007-02-07 | 精工爱普生株式会社 | Transistor circuit, display panel and electronic apparatus |
| CN101281723A (en) * | 2008-05-23 | 2008-10-08 | 上海广电光电子有限公司 | Pixel circuit of organic luminous display as well as drive method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW200540774A (en) * | 2004-04-12 | 2005-12-16 | Sanyo Electric Co | Organic EL pixel circuit |
| KR101197768B1 (en) * | 2006-05-18 | 2012-11-06 | 엘지디스플레이 주식회사 | Pixel Circuit of Organic Light Emitting Display |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909039A (en) * | 1998-03-18 | 2007-02-07 | 精工爱普生株式会社 | Transistor circuit, display panel and electronic apparatus |
| CN101281723A (en) * | 2008-05-23 | 2008-10-08 | 上海广电光电子有限公司 | Pixel circuit of organic luminous display as well as drive method thereof |
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