CN102677160A - Seeding method and system for growing sapphire by using kyropoulos method - Google Patents
Seeding method and system for growing sapphire by using kyropoulos method Download PDFInfo
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- CN102677160A CN102677160A CN2012101718778A CN201210171877A CN102677160A CN 102677160 A CN102677160 A CN 102677160A CN 2012101718778 A CN2012101718778 A CN 2012101718778A CN 201210171877 A CN201210171877 A CN 201210171877A CN 102677160 A CN102677160 A CN 102677160A
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000010899 nucleation Methods 0.000 title claims abstract description 44
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 34
- 239000010980 sapphire Substances 0.000 title claims abstract description 34
- 230000005684 electric field Effects 0.000 claims abstract description 68
- 239000002245 particle Substances 0.000 claims abstract description 64
- 230000001133 acceleration Effects 0.000 claims abstract description 18
- 238000010894 electron beam technology Methods 0.000 claims abstract description 16
- 125000004429 atom Chemical group 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UPLPHRJJTCUQAY-WIRWPRASSA-N 2,3-thioepoxy madol Chemical compound C([C@@H]1CC2)[C@@H]3S[C@@H]3C[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@](C)(O)[C@@]2(C)CC1 UPLPHRJJTCUQAY-WIRWPRASSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a seeding method and system for growing sapphire by using a kyropoulos method. The method comprises the following steps of: generating electrons inside an observation window through an electronic transmitter; accelerating the generated electrons by acceleration voltage to obtain a high-energy electron beam, and hitting atoms or molecules volatilizing from the interior of a furnace body with the obtained high-energy electron beam, so as to form charged particles; and applying an electric field or magnetic field with specific intensity to two sides of the observation window, and changing the movement direction of the charged particles under the action of the electric field or the magnetic field so that the charged particles are absorbed on the inner wall of the observation window, so as to protect the observation window. The seeding method and the system for growing the sapphire by using the kyropoulos method, provided by the invention, are capable of changing the movement direction of the charged particles by applying the electric field or the magnetic field with the specific intensity to the two sides of the observation window so that the charged particles are absorbed on the inner wall of the observation window before arriving at the observation window; and therefore, the technical problem of fuzziness of the observation window is solved; and simultaneously, the method and the system are capable of providing enough time guarantee for a seeding process.
Description
Technical field
The invention belongs to the crystal technique field, relate to a kind of method of growing sapphire, relate in particular to a kind of seeding method of kyropoulos growing sapphire; Simultaneously, the invention still further relates to a kind of seeding system of kyropoulos growing sapphire.
Background technology
Sapphire aluminum oxide (the Al that consists of
2O
3), be by three Sauerstoffatoms and two aluminium atoms with covalent linkage pattern be combined into, its crystalline structure is a hexagonal lattice structure.Because sapphire has the high velocity of sound, high temperature resistant, anticorrosive, high firmness, high light transmittance, the high characteristics such as (2045 ℃) of fusing point, therefore often be used as the material of sealed cell.
The at present existing a variety of methods of the growth method of sapphire crystal material; Mainly contain: kyropoulos (is the Kyropolos method; Abbreviation Ky method), guided mode method (be edge defined film-fed growth techniques method, be called for short the EFG method), heat-exchanging method (be heat exchange method method, be called for short the HEM method), crystal pulling method (are Czochralski; Be called for short the Cz method) Bridgman method (be the Bridgman method, or falling crucible method) etc.
At present, be used for the sapphire crystal growth method in LED field, kyropoulos is one of method of the most suitable large-scale industrial production of generally acknowledging in the world.Than higher, the quality of crystal mass depends on technician's seeding skill to this method very much to the requirement of seeding.And in the seeding process; The technician need utilize view port to make right judgement for a long time; And in the actual production process, because the visuality that the volatilization of various atoms, lewis' acid causes view port in the stove is by havoc, this has caused great difficulty to seeding.
The long sapphire of kyropoulos is exactly the process of following seed crystal seeding than the most important step of additive method; The technician need check the situation of seed crystal touching melt through viewing window during this time, and then makes right judgement, but the process duration of seeding is long usually; Being melted to the seeding end of processing from raw material generally can be above 20 hour; In this process, various atoms, lewis' acid can constantly volatilize and be adsorbed on the viewing window in the body of heater, cause view port more and more fuzzyyer; Cause very big difficulty to seeding, the crystal yield rate of coming out of the stove also just descends thereupon.
Summary of the invention
Technical problem to be solved by this invention is: a kind of seeding method of kyropoulos growing sapphire is provided, can solves the fuzzy problem of view port in the long sapphire seeding of the kyropoulos process.
In addition, the present invention also provides a kind of seeding system of kyropoulos growing sapphire, can solve the fuzzy problem of view port in the long sapphire seeding of the kyropoulos process.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of seeding method of kyropoulos growing sapphire is characterized in that said method comprises the steps:
Step S1, inner through electronic emitter generation electronics at viewing window;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage quickens, and clashes into atom or the molecule that is evaporated by body of heater inside, forms charged particle; The scope of said acceleration voltage is 20kv ~ 50kv; Atom that evaporates from body of heater inside or molecule are one or more metal M o, W atom, the O atom;
Step S3, add the electric field or the magnetic field of a certain strength in the viewing window both sides, change the heading of these charged particles, make on its inwall that is adsorbed on viewing window, with the protection view port through the effect in electric field or magnetic field; Add specific extra electric field in the viewing window both sides, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window; Perhaps, add specific magnetic field in the viewing window both sides, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
A kind of seeding method of kyropoulos growing sapphire, said method comprises the steps:
Step S1, inner through electronic emitter generation electronics at viewing window;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage quickens, get atom or molecule that the high-power electron beam bump is evaporated by body of heater inside, forms charged particle;
Step S3, add the electric field or the magnetic field of a certain strength in the viewing window both sides, change the heading of these charged particles, make on its inwall that is adsorbed on viewing window, with the protection view port through the effect in electric field or magnetic field.
As a kind of preferred version of the present invention, the scope of the acceleration voltage among the said step S2 is 20kv～50kv.
As a kind of preferred version of the present invention, among the said step S2, atom that evaporates from body of heater inside or molecule are one or more metal M o, W atom, the O atom.
As a kind of preferred version of the present invention, add specific extra electric field among the said step S3, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
As a kind of preferred version of the present invention, add specific magnetic field among the said step S3, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
A kind of seeding system of kyropoulos growing sapphire, said system comprises:
Electronic emitter is in order to produce electronics in viewing window inside;
The voltage accelerator module is in order to produce acceleration voltage; The electronics that said electronic emitter produces obtains high-power electron beam through behind the acceleration voltage, and atom or molecule that the high-power electron beam bump is evaporated by body of heater inside form charged particle;
Electric field or magnetic field generation unit in order in the electric field or the magnetic field that produce a certain strength in the viewing window both sides, change the heading of these charged particles through the effect in electric field or magnetic field, make on its inwall that is adsorbed on viewing window, with the protection view port.
As a kind of preferred version of the present invention, said electric field or magnetic field generation unit produce specific extra electric field, and extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
As a kind of preferred version of the present invention, said electric field or magnetic field generation unit produce specific magnetic field, and field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
Beneficial effect of the present invention is: the seeding method and system of the kyropoulos growing sapphire that the present invention proposes; Through add the electric field or the magnetic field of a certain strength in the viewing window both sides; Change the heading of charged particle; Thereby make it before the no show view port, be adsorbed on the viewing window inwall, solved the fuzzy technical barrier of view port.Simultaneously, the present invention can guarantee for the seeding process provides the competent time, effectively prolongs the duration of service of view port, under the situation that does not influence structure in the stove, can improve long brilliant success ratio greatly.
Description of drawings
Fig. 1 is the principle schematic of seeding method of the present invention.
Fig. 2 is the schema of seeding method of the present invention.
Fig. 3 in the seeding method of the present invention at the synoptic diagram of viewing window both sides added electric field.
Fig. 4 is for adding the synoptic diagram in magnetic field in the seeding method of the present invention in the viewing window both sides.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.
Embodiment one
See also Fig. 1; The present invention has disclosed a kind of seeding method of kyropoulos growing sapphire; Through inner through electronic emitter generation electronics at viewing window,, acceleration voltage obtains high-power electron beam and bump after quickening by atom or molecule that body of heater inside evaporates, and make it become ion; The electric field or the magnetic field that add a certain strength then in the viewing window both sides; Effect through electric field or magnetic field changes the heading of these charged particles, makes its inwall that is adsorbed on viewing window, thereby reaches the purpose of protection view port.
See also Fig. 2, the seeding method of kyropoulos growing sapphire of the present invention comprises the steps:
[step S1] is inner through electronic emitter generation electronics at viewing window.
The electronics that [step S2] step S1 produces obtains high-power electron beam after acceleration voltage quickens, and clashes into atom or the molecule that is evaporated by body of heater inside, forms charged particle.The scope of said acceleration voltage is 20kv ~ 50kv (like 30kv); Atom that evaporates from body of heater inside or molecule are one or more metal M o, W atom, the O atom;
[step S3] adds the electric field or the magnetic field of a certain strength in the viewing window both sides, the effect through electric field or magnetic field changes the heading of these charged particles, makes on its inwall that is adsorbed on viewing window, with the protection view port.
See also Fig. 3, can add specific extra electric field in viewing window 1 both sides, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
See also Fig. 4, also can add specific magnetic field in viewing window 1 both sides, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
More than introduced the seeding method of kyropoulos growing sapphire of the present invention, the present invention also discloses a kind of seeding system of kyropoulos growing sapphire when disclosing above-mentioned seeding method; Said system comprises: electronic emitter, voltage accelerator module, electric field or magnetic field generation unit.
Electronic emitter is in order to produce electronics in viewing window inside.
The voltage accelerator module is in order to produce acceleration voltage; The electronics that said electronic emitter produces obtains high-power electron beam through behind the acceleration voltage, and atom or molecule that the high-power electron beam bump is evaporated by body of heater inside form charged particle.
Electric field or magnetic field generation unit be in order in the electric field or the magnetic field that produce a certain strength in the viewing window both sides, changes the heading of these charged particles through the effect in electric field or magnetic field, makes on its inwall that is adsorbed on viewing window, with the protection view port.
Said electric field or magnetic field generation unit can be the electric field generation unit, and in order to produce specific extra electric field, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.As shown in Figure 3, the electric field generation unit comprises power supply, switch, adjustable resistor, two the copper electrode plates that are connected; Two copper electrode plates connect the two poles of the earth of power supply respectively.
Perhaps, said electric field or magnetic field generation unit can be the magnetic field generation unit, and in order to producing specific magnetic field, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.As shown in Figure 4, the magnetic field generation unit comprises magnet 3, lead 2, power supply, adjustable resistor, switch, and power supply, adjustable resistor, switch are through lead 2 series connection; Part lead 2 is wrapped on the magnet 3, as magnetic induction coil.
In sum; The seeding method and system of the kyropoulos growing sapphire that the present invention proposes; Through add the electric field or the magnetic field of a certain strength in the viewing window both sides; Change the heading of charged particle, thereby make it before the no show view port, be adsorbed on the viewing window inwall, solved the fuzzy technical barrier of view port.Simultaneously, the present invention can guarantee for the seeding process provides the competent time, effectively prolongs the duration of service of view port, under the situation that does not influence structure in the stove, can improve long brilliant success ratio greatly.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of the embodiment that is disclosed and change are possible, and the replacement of embodiment is known with the various parts of equivalence for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or essential characteristic, and the present invention can be with other form, structure, layout, ratio, and realize with other assembly, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to the embodiment that is disclosed.
Claims (9)
1. the seeding method of a kyropoulos growing sapphire is characterized in that, said method comprises the steps:
Step S1, inner through electronic emitter generation electronics at viewing window;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage quickens, and clashes into atom or the molecule that is evaporated by body of heater inside, forms charged particle; The scope of said acceleration voltage is 20kv ~ 50kv; Atom that evaporates from body of heater inside or molecule are one or more metal M o, W atom, the O atom;
Step S3, add the electric field or the magnetic field of a certain strength in the viewing window both sides, change the heading of these charged particles, make on its inwall that is adsorbed on viewing window, with the protection view port through the effect in electric field or magnetic field; Add specific extra electric field in the viewing window both sides, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window; Perhaps, add specific magnetic field in the viewing window both sides, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
2. the seeding method of a kyropoulos growing sapphire is characterized in that, said method comprises the steps:
Step S1, inner through electronic emitter generation electronics at viewing window;
The electronics that step S2, step S1 produce obtains high-power electron beam after acceleration voltage quickens, get atom or molecule that the high-power electron beam bump is evaporated by body of heater inside, forms charged particle;
Step S3, add the electric field or the magnetic field of a certain strength in the viewing window both sides, change the heading of these charged particles, make on its inwall that is adsorbed on viewing window, with the protection view port through the effect in electric field or magnetic field.
3. the seeding method of kyropoulos growing sapphire according to claim 2 is characterized in that:
The scope of the acceleration voltage among the said step S2 is 20kv ~ 50kv.
4. the seeding method of kyropoulos growing sapphire according to claim 2 is characterized in that:
Among the said step S2, atom that evaporates from body of heater inside or molecule are one or more metal M o, W atom, the O atom.
5. the seeding method of kyropoulos growing sapphire according to claim 2 is characterized in that:
Add specific extra electric field among the said step S3, extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
6. the seeding method of kyropoulos growing sapphire according to claim 2 is characterized in that:
Add specific magnetic field among the said step S3, field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
7. the seeding system of a kyropoulos growing sapphire is characterized in that, said system comprises:
Electronic emitter is in order to produce electronics in viewing window inside;
The voltage accelerator module is in order to produce acceleration voltage; The electronics that said electronic emitter produces obtains high-power electron beam through behind the acceleration voltage, and atom or molecule that the high-power electron beam bump is evaporated by body of heater inside form charged particle;
Electric field or magnetic field generation unit in order in the electric field or the magnetic field that produce a certain strength in the viewing window both sides, change the heading of these charged particles through the effect in electric field or magnetic field, make on its inwall that is adsorbed on viewing window, with the protection view port.
8. the seeding system of kyropoulos growing sapphire according to claim 7 is characterized in that:
Said electric field or magnetic field generation unit produce specific extra electric field, and extra electric field is a uniform electric field, electric field strength E>=2mv
2D/ (qL
2); Wherein, m represents the quality of charged ion, and the speed when on behalf of particle, v get into viewing window is set at uniform motion, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
9. the seeding system of kyropoulos growing sapphire according to claim 7 is characterized in that:
Said electric field or magnetic field generation unit produce specific magnetic field, and field direction is perpendicular to the heading of charged particle, magneticstrength B>=2mvd/ [q (L
2+ d
2)]; Wherein, m represents the quality of charged ion, the speed when on behalf of particle, v get into viewing window, and d represents the viewing window diameter, and q represents the electrically charged amount of particle, and L represents the length of viewing window.
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|---|---|---|---|
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2012
- 2012-05-29 CN CN201210171877.8A patent/CN102677160B/en not_active Expired - Fee Related
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| CN102677160B (en) | 2015-02-04 |
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