CN102664184A - Array substrate of X ray detection device and manufacturing method thereof - Google Patents
Array substrate of X ray detection device and manufacturing method thereof Download PDFInfo
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- CN102664184A CN102664184A CN2012100844788A CN201210084478A CN102664184A CN 102664184 A CN102664184 A CN 102664184A CN 2012100844788 A CN2012100844788 A CN 2012100844788A CN 201210084478 A CN201210084478 A CN 201210084478A CN 102664184 A CN102664184 A CN 102664184A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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Abstract
The invention discloses an array substrate of an X ray detection device and a manufacturing method thereof. The array substrate comprises a source electrode, a drain electrode, a reflection layer, an ohm layer, an active layer, a photodiode, a transparent electrode, a gate insulation layer, a grid and a bias voltage electrode, wherein the source electrode and the drain electrode are arranged opposite to each other and are formed on a substrate base plate; the reflection layer is connected with the drain electrode; the ohm layer is arranged on the source electrode and the drain electrode; the active layer is formed on the ohm layer and forms a channel with the source electrode and the drain electrode; the photodiode is formed on the reflection layer and the transparent electrode is formed on the photodiode; the gate insulation layer is formed on the active layer and the transparent electrode and covers the whole substrate; the grid is formed on the gate insulation layer and is located above the active layer; the bias voltage electrode is connected with the transparent electrode through a gate insulation layer through hole. The active layer can be formed during a second mask process. The channel is no longer influenced by etching. The grid formed by the subsequent step can protect the channel so that a channel barrier layer does not need to be arranged. Therefore, a manufacturing technology of the array substrate can be simplified and productivity can be substantially increased.
Description
Technical field
The present invention relates to digital X-ray image detection technique, particularly relate to a kind of array base palte and manufacturing approach thereof of x-ray detection device.
Background technology
The fast development of thin-film transistor technologies has driven the application of active matrix X ray detection technique, and it mainly is that the plane is detected that X ray detects, and the X ray shooting all is to use film recording light image in the last hundred years.The notion of issue word medical X-ray shooting is suggested as far back as early 1970s, and the revolutionary character that stores transmission system along with transmission of digital medical image and image develops, and directly drives the application of digital X-ray camera technique.Be different from charge coupled cell (Charge Coupled device; CCD) with complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductors; CMOS) digital X-ray shooting; The flat image detector provides large tracts of land detection and the advantage that does not take up space; Effectively save spacious day time-consuming flow process of traditional X-ray ray detection, the digital X-ray image system is fully than the processing time of 4 times of traditional computer radiography system saves, the high resolution display panel of arranging in pairs or groups simultaneously reach develop efficiency, the medical environment of diagnosis accuracy and no egative film.And the active matrix area detector is applied in the nondestructive testing; Under the situation of not destroying sample to be detected; In time detect the physics or the engineering properties of determinand, like about 50 microns slight crack, hole; Microdefect can detect easily, particularly on electronics, aerospace and auto industry, is widely used.
As depicted in figs. 1 and 2, the array base palte of existing X-ray detector generally includes at each pixel region: photodiode sensor spare 200 and film transistor device 300.Wherein, the main effect of photodiode sensor spare is to receive light, and converts light signal to the signal of telecommunication through photovoltaic effect, and the main effect of film transistor device is as the control switch and the signal of telecommunication that transmits the photovoltaic effect generation.
The operation principle of existing X-ray detector is: when X ray 101 bombardments in 102 last times of fluorescent material; The luminous ray that sees through fluorescent material 102 generations incides on the photodiode sensor spare 200 of array base palte; Because photovoltaic effect; Convert light signal into the signal of telecommunication, the signal of telecommunication is input to the control circuit of X-ray detector through the switch control of film transistor device 300.
As shown in Figure 3, prior art adopts 9 preparations that mask is accomplished whole X-ray detector array base palte, and its main technique step is:
The defective that prior art exists is; For avoiding when forming photodiode sensor spare, having influence on the uniformity of established film transistor device active layer raceway groove; Need above active layer, form a raceway groove barrier layer through a mask process (step 103); This has increased the complexity of array base palte manufacturing process undoubtedly, and production capacity is difficult to be promoted; In addition, for reducing the influence of film transistor device channel leakage stream, need to increase a metal light shield and cover up the light that X ray impact fluorescence powder produces, this also makes manufacturing cost further to reduce.
Summary of the invention
The array base palte and the manufacturing approach thereof that the purpose of this invention is to provide a kind of x-ray detection device; Need to adopt a mask process to go to form the raceway groove barrier layer in addition in order to solve the x-ray detection device array base palte that exists in the prior art; Manufacturing process is loaded down with trivial details, cost is higher, the difficult technical problem that promotes of production capacity.
The array base palte of x-ray detection device of the present invention comprises:
Be formed at the source electrode and the drain electrode of putting relatively on the underlay substrate, and the reflector layer that is connected with drain electrode;
Be formed at the ohm layer on source electrode and the drain electrode, and be formed on the ohm layer and form the active layer of raceway groove with source electrode and drain electrode;
Be formed at the photodiode on the reflector layer, and be formed at the transparency electrode on the photodiode;
Be formed on active layer and the transparency electrode and cover the gate insulator of whole base plate;
Be formed on the gate insulator, be positioned at the grid of active layer top and the bias electrode that is connected with transparency electrode through the gate insulator via hole.
Wherein, said photodiode is a PIN type photodiode, comprises P type semiconductor, I N-type semiconductor N and N type semiconductor, and said ohm layer is a n type semiconductor layer.
Said grid material is heavy metal or heavy metal alloy.
The material of said source electrode, drain electrode and reflector layer is identical.
Said grid is identical with the material of bias electrode.
The manufacturing approach of x-ray detection device array base palte of the present invention comprises step:
On the underlay substrate through the first time mask process form the source electrode relatively put and drain electrode, with the reflector layer that is connected of draining, be positioned at source electrode and drain on ohm layer, be positioned at photodiode and the figure of transparency electrode on the reflector layer;
Accomplish on the substrate of above step through the second time mask process form and be positioned on the ohm layer and form the active layer figure of raceway groove with source electrode and drain electrode;
On the substrate of accomplishing above step, form the gate insulator that covers whole base plate;
Accomplish on the substrate of above step the gate insulator via hole that is formed for connecting bias electrode and transparency electrode through mask process for the third time;
Form the grid and the bias electrode figure that is connected with transparency electrode that is positioned at above the active layer through the 4th mask process accomplishing on the substrate of above step.
Wherein, said first time, mask process was a half-tone mask technology, comprised step:
Sedimentary origin drain electrode metal level, n type semiconductor layer, I type semiconductor layer, p type semiconductor layer and transparent electrode layer successively on underlay substrate;
The mask plate that employing has full transparent area, semi-opaque region and light tight district makes public to substrate, and wherein, the corresponding position burn-out of full transparent area forms the raceway groove figure after the etching; The position part exposure that semi-opaque region is corresponding forms source electrode, drain electrode and ohm layer figure after the etching; The position of light tight district correspondence is unexposed, forms reflector layer, PIN photodiode and transparency electrode figure after the etching.
Wherein, the transparent electrode layer of exposure area, substrate top, p type semiconductor layer are etched away fully, the I type semiconductor layer fallen by partial etching.
Since the array base palte of x-ray detection device of the present invention during fabrication can through the half-tone mask technology first time form the source electrode put relatively and drain electrode, with the reflector layer that is connected of draining, be positioned at source electrode and drain on ohm layer, be positioned at photodiode and the figure of transparency electrode on the reflector layer; Active layer formed in the mask process in the second time; Raceway groove no longer receives the influence of etching; And the grid that subsequent step forms can be protected raceway groove; Save the mask process forming process on raceway groove barrier layer in the prior art, simplified the manufacturing process of array base palte, improved production capacity; In addition,, can effectively shut out the light, make channel leakage stream significantly reduce, need not to be provided with in addition again light shield, when simplifying production technology, further reduce production cost because grid is positioned at the top of active layer.
Through accompanying drawing and embodiment, technical scheme of the present invention is done further detailed description below.
Description of drawings
Fig. 1 is a prior art x-ray detection device array base palte cross-sectional view;
Fig. 2 detects the theory structure sketch map for the prior art x-ray detection device;
Fig. 3 is a prior art x-ray detection device array base palte manufacturing process key step flow chart;
Fig. 4 is an x-ray detection device array base palte cross-sectional view of the present invention;
Fig. 5 is an x-ray detection device array base palte manufacturing process key step flow chart of the present invention;
Fig. 6 is the present invention's half-tone mask technology first time key step flow chart;
Fig. 7 is a vertical view behind the present invention's half-tone mask technology first time exposure imaging;
Fig. 8 is the sectional view of Fig. 7 at the A-A place;
Fig. 9 for the present invention for the first time half-tone mask technology for the first time after the etching at the sectional view at A-A place;
Figure 10 is the sectional view of the present invention's half-tone mask technology etching second time first time (ashing) back at the A-A place;
Figure 11 for the present invention for the first time half-tone mask technology for the third time after the etching at the sectional view at A-A place;
Figure 12 for the present invention for the first time behind the half-tone mask technology stripping photoresist at the sectional view at A-A place;
Figure 13 is a vertical view behind the present invention's half-tone mask technology first time stripping photoresist;
Figure 14 is a vertical view after the present invention's mask process etching second time;
Figure 15 for the present invention for the second time after the mask process etching at the sectional view at A-A place;
Figure 16 is the present invention's vertical view after the mask process etching for the third time;
Figure 17 is vertical view after the 4th mask process etching of the present invention;
Figure 18 for after the 4th mask process etching of the present invention at the sectional view at A-A place;
Figure 19 is a sectional view after the 5th mask process of the present invention (the signal guidance district connects the data wire via hole) etching;
Figure 20 is a sectional view after the 5th mask process of the present invention (the signal guidance district connects the grid line via hole) etching;
Figure 21 is sectional view after the 6th mask process of the present invention (transparency electrode that the signal guidance district is connected with the data wire) etching;
Figure 22 is sectional view after the 6th mask process of the present invention (transparency electrode that the signal guidance district is connected with the grid line) etching.
Description of reference numerals:
The prior art Reference numeral:
10 underlay substrates, 11 grids, 12 gate insulators
13 active layers, 14 raceway groove barrier layers, 15 source electrodes
16 drain electrodes, 17 reflector layer 18N N-type semiconductor Ns
19I N-type semiconductor N 20P N-type semiconductor N 21 transparency electrodes
22 first passivation layers, 23 first via holes, 24 bias electrodes
25 second via holes, 26 holding wires, 27 light shields
28 second passivation layers, 29 ohm layer 101X light
102 fluorescent material, 200 photodiode sensor spares, 300 film transistor devices
Reference numeral of the present invention:
50 underlay substrates, 51 grids, 52 gate insulators
53 active layers, 69 ohm layers, 55 source electrodes
56 drain electrodes, 57 reflector layer 58N N-type semiconductor Ns
59I N-type semiconductor N 60P N-type semiconductor N 61 transparency electrodes
62 passivation layers, 63 gate insulator via holes, 64 bias electrodes
The transparency electrode 550 source-drain electrode metal levels in 61a signal guidance district
580N type semiconductor layer 590I type semiconductor layer
600P type semiconductor layer 610 transparent electrode layers
100 photoresists
Embodiment
Need to adopt a mask process to go to form the raceway groove barrier layer in addition in order to solve the x-ray detection device array base palte that exists in the prior art; Manufacturing process is loaded down with trivial details, cost is higher; Production capacity is the technical problem of difficulty lifting, the invention provides a kind of array base palte and manufacturing approach thereof of x-ray detection device.
For the advantage that makes technical scheme of the present invention is clearer, the array base palte and the manufacturing approach thereof of x-ray detection device of the present invention are done detailed description below in conjunction with accompanying drawing.Obviously, the accompanying drawing in describing below only is specific embodiments more of the present invention, for those of ordinary skill in the art, is not paying under the creationary prerequisite, can also obtain other accompanying drawing according to these accompanying drawings.
As shown in Figure 4, the array base palte of x-ray detection device of the present invention comprises:
Be formed at the source electrode 55 and drain electrode 56 put relatively on the underlay substrate 50, and the reflector layer 57 that is connected with drain electrode 56;
Be formed at the ohm layer 69 on source electrode 55 and the drain electrode 56, and be formed on the ohm layer 69 and form the active layer 53 of raceway grooves with source electrode 55 and drain electrode 56;
Be formed at the photodiode on the reflector layer 57, and be formed at the transparency electrode 61 on the photodiode;
Be formed on active layer 53 and the transparency electrode 61 and cover the gate insulator 52 of whole base plate;
Be formed on the gate insulator 52, be positioned at the grid 51 of active layer 53 tops and the bias electrode 64 that is connected with transparency electrode 61 through gate insulator via hole 63.
Wherein, Photodiode can be MIS type photodiode or PIN type photodiode etc., preferred PIN type photodiode, and PIN type photodiode (P type semiconductor 60, I N-type semiconductor N 59, N type semiconductor 58) is the PN junction between two kinds of semiconductors; The perhaps adjacent domain of the knot between semiconductor and the metal; Between P district and N district, generate I type layer, absorbing light radiation and produce a kind of photodetector of photoelectric current, advantages such as junction capacitance is little because it has, transit time weak point, sensitivity height.
The setting of ohm layer 69 be for reduce source electrode 55, the drain electrode 56 and active layer 53 between resistance, realize ohmic contact preferably, its material is a N type semiconductor, promptly doped semiconductor is identical with N type semiconductor 58 materials of PIN type photodiode.
Because source electrode 55, drain electrode 56 and reflector layer 57 are forming with in a mask process, grid 51 is forming with in a mask process with bias electrode 64, so source electrode 55, drain electrode 56 and reflector layer 57 can adopt same metal material; Grid and bias electrode can adopt same metal material.
Also comprise the passivation layer 62 that is formed on grid 51 and the transparency electrode 61 and covers whole base plate in the embodiment shown in fig. 4; The transparency electrode 61a in substrate periphery signal guidance district is connected with data wire 55a through the via hole that connects on passivation layer 62, the gate insulator 52, is connected with grid line 51a through the via hole on the passivation layer 62.Passivation layer can adopt inorganic insulating membrane, for example silicon nitride etc., or organic insulating film, for example resin material etc.
In the array base palte of x-ray detection device of the present invention, because film transistor device is the top gate type structure, raceway groove is positioned at the below of grid, and therefore, raceway groove can not receive the influence of etching in its process for making, need not to be provided with in addition the raceway groove barrier layer; Grid can effectively shut out the light, and makes channel leakage stream significantly reduce, and need not to be provided with in addition light shield again, when simplifying production technology, has further reduced production cost.
To shown in Figure 22, the array base palte of x-ray detection device of the present invention can adopt six mask production technologies to form altogether like Fig. 5, and its main implementation process comprises:
Step 201: sedimentary origin drain electrode metal level 550, n type semiconductor layer (n+a-Si) 580, I type semiconductor layer (a-Si) 590, p type semiconductor layer (p+a-Si) 600 and transparent electrode layer 610 successively on underlay substrate 50 (can be glass substrate, plastic base etc.), form through the mask process first time (half-tone mask technology) source electrode 55 put relatively and drain electrode 56, with drain 56 be connected reflector layer 57, be positioned at source electrode 55 and the ohm layer 69 on 56 of draining, be positioned at photodiode and the figure of transparency electrode 61 on the reflector layer 57;
As shown in Figure 6, its concrete steps are following:
Step 2011: the method sedimentary origin drain electrode metal level 550 that on underlay substrate 50, adopts magnetron sputtering; Adopt method deposition n type semiconductor layer 580, I type semiconductor layer 590, the p type semiconductor layer 600 of chemical vapour deposition (CVD) then, adopt the method deposit transparent electrode layer 610 of magnetron sputtering again.
Wherein, Source-drain electrode metal level 550 is used to form source electrode 55, drain electrode 56 and reflector layer 57; Its material can be the monofilm of aluminium neodymium alloy (AlNd), aluminium (Al), copper (Cu), molybdenum (Mo), molybdenum and tungsten alloy (MoW) or chromium (Cr), the composite membrane that also can be constituted for these metal material combination in any; Part n type semiconductor layer 580 is used to form ohm layer 69, and part I type semiconductor layer 590 is used to form the part of active layer 53; The material of transparent electrode layer 610 can be tin indium oxide etc.
Step 2012: the substrate to completing steps 2011 adopts the mask plate (being half-tone mask plate) with full transparent area, semi-opaque region and light tight district that it is made public, develops after applying photoresist 100; Wherein, The corresponding position burn-out of full transparent area is used for further forming the raceway groove figure after the etching; The position part exposure that semi-opaque region is corresponding is used for further forming source electrode 55, drain electrode 56 and ohm layer 69 figures after the etching; The position of light tight district correspondence is unexposed, is used for further forming reflector layer 57, PIN photodiode and transparency electrode 61 figures after the etching, like Fig. 7 and shown in Figure 8.
Step 2013: the substrate to completing steps 2012 etches away transparent electrode layer 610 with wet-etching technology in the burn-out district; With dry etch process p type semiconductor layer 600, I type semiconductor layer 590, n type semiconductor layer 580 are etched away then; With wet-etching technology source-drain electrode metal level 550 is etched away again, as shown in Figure 9.
Step 2014: the substrate to completing steps 2013 adopts the ashing etching technics to remove the photoresist 100 of part exposure region, and is shown in figure 10.
Step 2015: the substrate to completing steps 2014 etches away transparent electrode layer 610 with wet-etching technology at the part exposure region; Etch away p type semiconductor layer 600 and part I type semiconductor layer 590 with dry etch process then, shown in figure 11.The I type semiconductor layer also can all be etched away, but difficult realization in actual production technology because etch away the ohm layer part easily, therefore preferably etches away the I type semiconductor layer of part.
Step 2016: the photoresist on the substrate of completing steps 2,015 100 is peeled off, like Figure 12 and shown in Figure 13.
Step 202: on the substrate of completing steps 201 through the second time mask process form and to be positioned on the ohm layer 69 and to form active layer 53 figures of raceway grooves with source electrode 55 and drain electrode 56, like Figure 14 and shown in Figure 15.Active layer 53 materials are amorphous silicon, form through dry etch process in the method deposition back of adopting chemical meteorology deposition.
Step 203: deposition covers the gate insulator 52 of whole base plate on the substrate of completing steps 202, and is formed for connecting the gate insulator via hole 63 of bias electrode 64 and transparency electrode 61 through mask process for the third time, and is shown in figure 16.Gate insulator 52 materials are silicon nitride, adopt the chemical vapour deposition technique deposition, form the gate insulator via hole through dry etch process.In the embodiment of the invention; The gate insulator via hole is used to connect bias electrode that is positioned at the gate insulation layer top and the transparency electrode that is positioned at the gate insulation layer below; Generally speaking, when follow-up formation bias electrode, make the material that forms bias electrode be deposited into via hole and can realize being connected of bias electrode and transparency electrode.
Step 204: form the grid 51 and bias electrode 64 figures that are connected with transparency electrode 61 that is positioned at above the active layer 53 on the substrate of completing steps 203 through the 4th mask process, like Figure 17 and shown in Figure 180.Grid 51 is identical with the material of bias electrode 64, is Pot metal, after adopting the method deposition gate metal layer 51a of magnetron sputtering, forms through a wet-etching technology.
Step 205: deposit passivation layer 62 on the substrate of completing steps 204, and form passivation layer via hole through the 5th mask process at the signal welding region of panel periphery, like Figure 19 and shown in Figure 20.
Step 206: on the substrate of completing steps 205, pass through the transparency electrode 61a in the 6th mask process formation panel periphery signal guidance district, like Figure 21 and shown in Figure 22.
Can find out from the production process of the array base palte of x-ray detection device of the present invention; Since the array base palte of x-ray detection device of the present invention during fabrication can through the half-tone mask technology first time form the source electrode 55 put relatively and drain electrode 56, with drain 56 be connected reflector layer 57, be positioned at source electrode 55 and the ohm layer 69 on 56 of draining, be positioned at photodiode and the figure of transparency electrode 61 on the reflector layer 57; Active layer 53 formed in the mask process in the second time; Raceway groove no longer receives the influence of etching; Saved the mask process forming process on raceway groove barrier layer in the prior art; Can adopt mask process altogether six times, simplify the manufacturing process of array base palte, improve production capacity greatly.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the array base palte of an x-ray detection device is characterized in that, comprising:
Be formed at the source electrode and the drain electrode of putting relatively on the underlay substrate, and the reflector layer that is connected with drain electrode;
Be formed at the ohm layer on source electrode and the drain electrode, and be formed on the ohm layer and form the active layer of raceway groove with source electrode and drain electrode;
Be formed at the photodiode on the reflector layer, and be formed at the transparency electrode on the photodiode;
Be formed on active layer and the transparency electrode and cover the gate insulator of whole base plate;
Be formed on the gate insulator, be positioned at the grid of active layer top and the bias electrode that is connected with transparency electrode through the gate insulator via hole.
2. array base palte as claimed in claim 1 is characterized in that, said photodiode is a PIN type photodiode, comprises P type semiconductor, I N-type semiconductor N and N type semiconductor, and said ohm layer is a n type semiconductor layer.
3. array base palte as claimed in claim 1 is characterized in that, said grid material is heavy metal or heavy metal alloy.
4. array base palte as claimed in claim 1 is characterized in that the material of said source electrode, drain electrode and reflector layer is identical.
5. array base palte as claimed in claim 1 is characterized in that, said grid is identical with the material of bias electrode.
6. the manufacturing approach of an x-ray detection device array base palte is characterized in that, comprises step:
On the underlay substrate through the first time mask process form the source electrode relatively put and drain electrode, with the reflector layer that is connected of draining, be positioned at source electrode and drain on ohm layer, be positioned at photodiode and the figure of transparency electrode on the reflector layer;
Accomplish on the substrate of above step through the second time mask process form and be positioned on the ohm layer and form the active layer figure of raceway groove with source electrode and drain electrode;
On the substrate of accomplishing above step, form the gate insulator that covers whole base plate;
Accomplish on the substrate of above step the gate insulator via hole that is formed for connecting bias electrode and transparency electrode through mask process for the third time;
Form the grid and the bias electrode figure that is connected with transparency electrode that is positioned at above the active layer through the 4th mask process accomplishing on the substrate of above step.
7. the manufacturing approach of array base palte as claimed in claim 6 is characterized in that, the material of source electrode, drain electrode and reflector layer is identical in the said first time half-tone mask technology.
8. the manufacturing approach of array base palte as claimed in claim 6 is characterized in that, grid is identical with the material of bias electrode in said the 4th mask process.
9. the manufacturing approach of array base palte as claimed in claim 6 is characterized in that, said first time, mask process was a half-tone mask technology, comprised step:
Sedimentary origin drain electrode metal level, n type semiconductor layer, I type semiconductor layer, p type semiconductor layer and transparent electrode layer successively on underlay substrate;
The mask plate that employing has full transparent area, semi-opaque region and light tight district makes public to substrate, and wherein, the corresponding position burn-out of full transparent area forms the raceway groove figure after the etching; The position part exposure that semi-opaque region is corresponding forms source electrode, drain electrode and ohm layer figure after the etching; The position of light tight district correspondence is unexposed, forms reflector layer, PIN photodiode and transparency electrode figure after the etching.
10. the manufacturing approach of array base palte as claimed in claim 9 is characterized in that, transparent electrode layer, the p type semiconductor layer of exposure area, substrate top etched away fully, the I type semiconductor layer is fallen by partial etching.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210084478.8A CN102664184B (en) | 2012-03-27 | 2012-03-27 | Array substrate of X ray detection device and manufacturing method thereof |
| PCT/CN2012/084611 WO2013143296A1 (en) | 2012-03-27 | 2012-11-14 | Array substrate of x-ray detection device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210084478.8A CN102664184B (en) | 2012-03-27 | 2012-03-27 | Array substrate of X ray detection device and manufacturing method thereof |
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| CN102664184A true CN102664184A (en) | 2012-09-12 |
| CN102664184B CN102664184B (en) | 2014-08-06 |
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| WO (1) | WO2013143296A1 (en) |
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| WO2013143296A1 (en) * | 2012-03-27 | 2013-10-03 | 北京京东方光电科技有限公司 | Array substrate of x-ray detection device and manufacturing method thereof |
| CN103560135A (en) * | 2013-11-14 | 2014-02-05 | 北京京东方光电科技有限公司 | Array substrate of X-ray sensor and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2013143296A1 (en) | 2013-10-03 |
| CN102664184B (en) | 2014-08-06 |
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