CN102644112A - Alumina photonic crystal heterojunction and preparation method thereof - Google Patents
Alumina photonic crystal heterojunction and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an alumina photonic crystal heterojunction and a preparation method thereof. The heterojunction is an alumina film which is formed by respective superposition and seamless junction of two periodic layers with different lengths, wherein the periodic layers are formed by serially-connected straight holes and bifurcated holes; the method comprises the following steps: oxidizing an aluminium sheet in an oxalic acid solution at a first periodic voltage for 100-200 periods, wherein the waveform of the first periodic voltage is that the voltage increases from VL to VH according to a sine wave rule within a 0.5-min period, then linearly decreases from VH to 0.71 VH within a 0.5-min period, and decreases from 0.71 VH to VL within a 4-min period, the value of VH is not less than 30 V and not more than 100 V, and the value of VL is not less than 0.4 VH and less than 0.71 VH, then performing a second periodic oxidization with a same waveform and period as those of the first periodic oxidization so as to obtain an alumina sheet with two periodic layers, wherein the upper and lower limits of the voltage are respectively p*VH and p*VL, and the p values are respectively 0.3<=p<1 or 1<p<=3.3, removing superfluous aluminium at the back to obtain the target product. The product is widely applicable to various photonic integrated lines.
Description
Technical field
The present invention relates to a kind of crystal heterojunction and preparation method, especially a kind of aluminum oxide photon crystal heterojunction and preparation method thereof.
Background technology
At present, along with semiconductor technology develops to high-speed, highly integrated direction, the accuracy of signal Synchronization is also had higher requirement.Yet the highly integrated circuit that causes is thin more, and its resistance is also big more, and energy waste is just many more.So people have turned to photon technology to sight, hope can replace the carrier of electronics as information with photon, with the development of further promotion human civilization.Compare with electronics, photon has following advantage: the one, and high information content and efficient; The 2nd, the speed of response that is exceedingly fast; The 3rd, extremely strong interconnection capability and parallel ability; The 4th, a little less than the photon interphase interaction very, can greatly reduce energy waste.Photonic crystal with similar semiconductor material performance is foretold that might promote infotech in 21 century produces new breakthrough.Therefore; People are in order to explore and expand the range of application of photonic crystal; Some trials and effort have been done, like " a kind of preparation method of high quality aluminum oxide photon crystal " who discloses among the disclosed Chinese invention patent Shen Qing Publication specification sheets CN 101220510A on July 16th, 2008.It is to adopt the high and low constant current density technical scheme of anodic alumina film repeatedly, and it is constant and have a high-quality aluminum oxide photon crystal of dark optical band gap to have obtained the band gap position.But; No matter be aluminum oxide photon crystal; Still its preparation method all exists weak point, at first; Final product is merely by large and small straight hole and alternately arranges the aluminum oxide photon crystal that constitutes, rather than will play the part of the aluminum oxide photon crystal heterojunction of heterojunction semiconductor at electronic applications institute role in the photon field; Secondly, the preparation method can't obtain the aluminum oxide photon crystal heterojunction.
Summary of the invention
The technical problem that the present invention will solve is for overcoming weak point of the prior art, and a kind of photonic crystal with different cycles length aluminum oxide photon crystal heterojunction of seamless combination spatially is provided.
Another technical problem that the present invention will solve is the preparation method that a kind of above-mentioned aluminum oxide photon crystal heterojunction is provided.
For solving technical problem of the present invention, the technical scheme that is adopted is: the aluminum oxide photon crystal heterojunction is made up of aluminum oxide film, particularly,
The thickness of said film is 60～220 μ m, and seamless combination constituted after its cycle layer by two kinds of different lengthss superposeed separately, and said cycle layer is made up of the straight hole and the bifurcated hole of serial connection;
The number of plies of the cycle layer of first kind of length in the cycle layer of said two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～180nm, Kong Changwei 100～1000nm, and the bore dia in bifurcated hole is that the angle between 20～180nm, Kong Changwei 20～200nm, the bifurcated hole is 50～70 degree;
The number of plies of the cycle layer of second kind of length in the cycle layer of said two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～80nm, Kong Changwei 60～500nm; The bore dia in bifurcated hole is that the angle between 20～80nm, Kong Changwei 20～100nm, the bifurcated hole is 50～70 degree
Perhaps the bore dia of the straight hole in every layer is 40～180nm, Kong Changwei 300～1000nm, and the bore dia in bifurcated hole is that the angle between 40～180nm, Kong Changwei 60～200nm, the bifurcated hole is 50～70 degree.
As the further improvement of aluminum oxide photon crystal heterojunction, the axially bored line of the straight hole in the described cycle layer is perpendicular to the plane of aluminum oxide film.
For solving another technical problem of the present invention, another technical scheme that is adopted is: the preparation method of above-mentioned aluminum oxide photon crystal heterojunction adopts anonizing, and particularly completing steps is following:
Step 1; Earlier aluminium flake being placed temperature is that 0～25 ℃, concentration are the oxalic acid solution of 0.2～0.4M; Again it is depressed 100～200 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5mi n during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit, V
HBe the anodic oxidation upper voltage limit, its span is respectively 30V≤V
H≤100V and 0.4V
H≤V
L＜0.71V
HObtain having the alumina wafer of first kind of length cycle layer; Then; Continuation is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 100～200 cycle lifies to the alumina wafer that has first kind of length cycle layer, and the waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
HAnd p * V
L, the span of p is respectively 0.3≤p＜1 or 1＜p≤3.3, obtains having the alumina wafer of first kind and second kind length cycle layer;
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places Cupric Chloride Solution or tin chloride solution to get rid of the unnecessary aluminium in the back side, makes the aluminum oxide photon crystal heterojunction.
As the preparing method's of aluminum oxide photon crystal heterojunction further improvement, the purity of described aluminium flake is>=99.9%; The temperature of described oxalic acid solution is that 18 ℃, concentration are 0.3M; The described V that works as
HAnd V
LMagnitude of voltage be respectively 53V and 23V, and during p=1.1, p * V
HAnd p * V
LMagnitude of voltage be respectively 58.3V and 25.3V.
Beneficial effect with respect to prior art is; One of which; Use ESEM and ultraviolet-visible-near infrared sub-ray spectrometer to characterize respectively to the title product that makes, can know from its result, title product is that thickness is the aluminum oxide film of 60～220 μ m; Seamless combination constituted after its cycle layer by two kinds of different lengthss superposeed separately, and the cycle layer is made up of the straight hole and the bifurcated hole of serial connection.Wherein, The number of plies of the cycle layer of first kind of length in the cycle layer of two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～180nm, Kong Changwei 100～1000nm, and the bore dia in bifurcated hole is that the angle between 20～180nm, Kong Changwei 20～200nm, the bifurcated hole is 50～70 degree; The number of plies of the cycle layer of second kind of length in the cycle layer of two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～80nm, Kong Changwei 60～500nm; The bore dia in bifurcated hole is that the angle between 20～80nm, Kong Changwei 20～100nm, the bifurcated hole is 50～70 degree; Perhaps the bore dia of the straight hole in every layer is 40～180nm, Kong Changwei 300～1000nm, and the bore dia in bifurcated hole is that the angle between 40～180nm, Kong Changwei 60～200nm, the bifurcated hole is 50～70 degree.The title product that possesses this kind pattern and size; Its optical property has not only had single-photon crystalline characteristic; Also because of the cycle layer of two kinds of different lengthss; I.e. two kinds of photonic crystals seamless combination spatially, and had the unexistent excellent properties of single aluminum oxide photon crystal---aluminum oxide photon crystal heterojunction, this will make it play the part of heterojunction semiconductor in the photon field at electronic applications institute role.The realization of seamless combination; Both solved the unmatched difficult problem of lattice that causes owing to its interface dislocation when combining between the single-photon crystal; Make the photon crystal heterojunction of formation have dark photon band gap, precipitous level and smooth band edge, the non-bandgap zone of high-transmission rate again; Also realized the adjustable of band gap width and bandwidth, made it important application prospects arranged at wide/narrow band filter, comprehensive speculum, low-loss waveguide and various high-quality aspects such as photon integrated circuit.They are two years old; The process that the cycle layer of being made up of the straight hole and the bifurcated hole of serial connection in the title product forms does; In the anodic oxidation voltage scope of setting, when oxidation voltage was increased to the anodic oxidation upper voltage limit according to sinusoidal wave rule by the anodic oxidation lower voltage limit, its aperture was maximum---branch point; By the anodic oxidation upper voltage limit in linear 0.71 times the process that is reduced to the anodic oxidation upper voltage limit, macropore begins forked growth at oxidation voltage; Oxidation voltage by 0.71 times of the anodic oxidation upper voltage limit in the long time (4min) in the linear process that is reduced to the anodic oxidation lower voltage limit; Though two entry continued growths form straight hole; But because the spatial restriction finally only has a less straight hole of resistance to be able to continue the growth in new cycle.They are three years old; Preparing method's science, effectively, required equipment is simple, technology is convenient, and preparation controllable process, good reproducibility, pollution-free, production cost is low; Be used to prepare the photon crystal heterojunction of various materials except that being easy to expand, also be suitable for large-scale industrial production.In the process of preparation title product; Through regulating the upper and lower limit voltage difference (p) of two kinds of asymmetric voltages of periodicity; Title product can be realized overlapping or the separation that can be with; Cause the stack of photon band gap or the appearance of photon passband, realize optionally accommodation reflex wavelength region (adjusting band gap width) and transmitted light zone (adjusting bandwidth).When 1＜p≤3.3, along with the increase of p, the overlapping of two photon band gaps of aluminum oxide photon crystal heterojunction part reduces gradually and separates into two independently band gap, independently a broad-adjustable passband occurred in the middle of the band gap at two simultaneously.When 0.3≤p＜1, otherwise the result then.
As the further embodiment of beneficial effect, the one, the axially bored line preferred vertical of the straight hole in the cycle layer is beneficial to giving full play to of photon crystal heterojunction effect in the plane of aluminum oxide film; The 2nd, the purity of aluminium flake is preferably>=99.9%, guaranteed the quality of aluminum oxide photon crystal heterojunction; The 3rd, the temperature of oxalic acid solution is preferably 18 ℃, concentration and is preferably 0.3M, is beneficial to the quality that guarantees title product; The 4th, work as V
HAnd V
LMagnitude of voltage be preferably 53V and 23V respectively, and during p=1.1, p * V
HAnd p * V
LMagnitude of voltage be preferably 58.3V and 25.3V respectively, be beneficial to the title product that obtains better performance.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 uses one of result that ESEM (SEM) characterizes to the title product that makes.Thick dashed line place in the SEM photo is the seamless combination place of title product, and its top is the cycle layer of first kind of length---photonic crystal PC I, bottom are the cycle layer of second kind of length---photonic crystal PC II; Fine dotted line place in the SEM photo is the bed interface of length cycle layer of the same race.P=1.1 when preparing this title product can be found out by the SEM photo, two kinds of seamless combination with aluminum oxide photon crystal of different cycles length, i.e. very good of space matching; The average cycle length of photonic crystal PCI is that the mean thickness of 461nm, straight hole layer is that 400nm, mean pore size are that the mean thickness of 48nm, entry layer is 60nm, and the average cycle length of photonic crystal PC II is that the mean thickness of 625nm, straight hole layer is that 533nm, mean pore size are that the mean thickness of 53nm, entry layer is 92nm.The entry layer of two kinds of photonic crystals has all received more serious electrolytic solution chemical corrosion effect, and its hole wall is fuzzy gradually to disappear.Photonic crystal PC I has similar periodic structure with photonic crystal PC II, and promptly the straight hole layer is arranged across the entry layer period-interleaving of fuzzy pattern, and also promptly grow facing to the hole wall of straight hole layer of last cycle in the straight hole center of the straight hole layer in following cycle.
In addition; Proportional relation according to anodic oxidation growth velocity and pore size and oxidation voltage can be inferred: the bound magnitude of voltage when preparation photonic crystal PC II is during greater than preparation photonic crystal PC I (p＞1), and the average cycle length of photonic crystal PC II and aperture are all greater than average cycle length and the aperture of photonic crystal PC I in the aluminum oxide heterojunction; Bound magnitude of voltage when preparation photonic crystal PC II is during less than preparation photonic crystal PC I (p＜1), and the average cycle length of photonic crystal PC II and aperture are all less than average cycle length and the aperture of photonic crystal PC I in the aluminum oxide heterojunction.This with preparation after the actual pattern of the title product that obtains also conform to size.
Fig. 2 is the pattern synoptic diagram of title product shown in Figure 1.
Fig. 3 be bound magnitude of voltage during to preparation photonic crystal PC II during greater than preparation photonic crystal PC I (p＞1) prepared title product use one of result that ultraviolet-visible-the near infrared sub-ray spectrometer characterizes; Shortwave forbidden band among the figure is the photon band gap of photonic crystal PC I, and the long wave forbidden band is the photon band gap of photonic crystal PC II.Wherein, the transmitted light spectrogram of the title product when Fig. 3 a and Fig. 3 b are respectively p=1.03 and p=1.05 can be found out by it; The forbidden band of photonic crystal PC I and photonic crystal PC II is that part overlaps; And along with the increase of p value, two forbidden bands overlap and partly tail off gradually, and total band gap broadens; The transmitted light spectrogram of the title product when Fig. 3 c and Fig. 3 d are respectively p=1.1 and p=1.2; Can find out by it; The forbidden band of photonic crystal PC I and photonic crystal PC II is independently to separate; The overlapping that has no, and in the middle of the forbidden band, occurred one through the zone, this regional scope broadens along with the increase of p (p＞1.05).In addition; Can know according to bragg's formula m λ=2nd; Bound magnitude of voltage when preparation photonic crystal PC II is during less than preparation photonic crystal PC I (p＜1), and the transmission spectrum medium short wave forbidden band of title product is photonic crystal PC II, and the long wave forbidden band is photonic crystal PC I.
Embodiment
At first buy or make with ordinary method from market:
Purity is >=99.9% aluminium flake; Oxalic acid solution; Cupric Chloride Solution or tin chloride solution.Then,
Embodiment 1
The concrete steps of preparation are:
Step 1, earlier aluminium flake being placed temperature is that 0 ℃, concentration are the oxalic acid solution of 0.2M; Wherein, the purity of aluminium flake is 99.9%.Again it is depressed 100 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5min during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit 12V, V
HBe anodic oxidation upper voltage limit 30V, obtain having the alumina wafer of first kind of length cycle layer.Then, continue the alumina wafer that has first kind of length cycle layer is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 200 cycle lifies; The waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
H=39.9V and p * V
L=12.36V (value of p is 1.03) obtains having the alumina wafer of first kind and second kind length cycle layer.
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places Cupric Chloride Solution to get rid of the unnecessary aluminium in the back side, make be similar to illustrated in figures 1 and 2, and the aluminum oxide photon crystal heterojunction shown in Fig. 3 a.
Embodiment 2
The concrete steps of preparation are:
Step 1, earlier aluminium flake being placed temperature is that 10 ℃, concentration are the oxalic acid solution of 0.25M; Wherein, the purity of aluminium flake is 99.99%.Again it is depressed 125 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5min during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit 18V, V
HBe anodic oxidation upper voltage limit 38V, obtain having the alumina wafer of first kind of length cycle layer.Then, continue the alumina wafer that has first kind of length cycle layer is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 175 cycle lifies; The waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
H=39.9V and p * V
L=18.9V (value of p is 1.05) obtains having the alumina wafer of first kind and second kind length cycle layer.
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places tin chloride solution to get rid of the unnecessary aluminium in the back side, make be similar to illustrated in figures 1 and 2, and the aluminum oxide photon crystal heterojunction shown in Fig. 3 b.
Embodiment 3
The concrete steps of preparation are:
Step 1, earlier aluminium flake being placed temperature is that 18 ℃, concentration are the oxalic acid solution of 0.3M; Wherein, the purity of aluminium flake is 99.9%.Again it is depressed 150 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5min during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit 23V, V
HBe anodic oxidation upper voltage limit 53V, obtain having the alumina wafer of first kind of length cycle layer.Then, continue the alumina wafer that has first kind of length cycle layer is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 150 cycle lifies; The waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
H=58.3V and p * V
L=25.3V (value of p is 1.1) obtains having the alumina wafer of first kind and second kind length cycle layer.
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places Cupric Chloride Solution to get rid of the unnecessary aluminium in the back side, make as depicted in figs. 1 and 2, and the aluminum oxide photon crystal heterojunction shown in Fig. 3 c.
Embodiment 4
The concrete steps of preparation are:
Step 1, earlier aluminium flake being placed temperature is that 23 ℃, concentration are the oxalic acid solution of 0.35M; Wherein, the purity of aluminium flake is 99.99%.Again it is depressed 175 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5mi n during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4mi n by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit 44V, V
HBe anodic oxidation upper voltage limit 69V, obtain having the alumina wafer of first kind of length cycle layer.Then, continue the alumina wafer that has first kind of length cycle layer is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 125 cycle lifies; The waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
H=158.7V and p * V
L=101.2V (value of p is 2.3) obtains having the alumina wafer of first kind and second kind length cycle layer.
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places tin chloride solution to get rid of the unnecessary aluminium in the back side, makes to be similar to illustrated in figures 1 and 2ly, and is similar to the aluminum oxide photon crystal heterojunction shown in Fig. 3 a.
Embodiment 5
The concrete steps of preparation are:
Step 1, earlier aluminium flake being placed temperature is that 25 ℃, concentration are the oxalic acid solution of 0.4M; Wherein, the purity of aluminium flake is 99.9%.Again it is depressed 200 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5min during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit 70V, V
HBe anodic oxidation upper voltage limit 99V, obtain having the alumina wafer of first kind of length cycle layer.Then, continue the alumina wafer that has first kind of length cycle layer is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 100 cycle lifies; The waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
H=326.7V and p * V
L=231V (value of p is 3.3) obtains having the alumina wafer of first kind and second kind length cycle layer.
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places Cupric Chloride Solution to get rid of the unnecessary aluminium in the back side, makes to be similar to illustrated in figures 1 and 2ly, and is similar to the aluminum oxide photon crystal heterojunction shown in Fig. 3 a.
Again in the anodic oxidation upper voltage limit V of the asymmetric voltage of period 1 property
HWith anodic oxidation lower voltage limit V
LIn select 30V≤V respectively
H≤100V and 0.4V
H≤V
L＜0.71V
HAmong arbitrary magnitude of voltage, and again in the anodic oxidation upper voltage limit p * V of the asymmetric voltage of property second cycle
HWith anodic oxidation lower voltage limit p * V
LIn select the arbitrary value among 0.3≤p＜1 or 1＜p≤3.3 respectively; Repeat the foregoing description 1～5; Made equally as or be similar to illustrated in figures 1 and 2, and as or be similar to the aluminum oxide photon crystal heterojunction shown in Fig. 3 a or Fig. 3 b or Fig. 3 c or Fig. 3 d.
Obviously, those skilled in the art can carry out various changes and modification to aluminum oxide photon crystal heterojunction of the present invention and preparation method thereof and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. an aluminum oxide photon crystal heterojunction is made up of aluminum oxide film, it is characterized in that:
The thickness of said film is 60～220 μ m, and seamless combination constituted after its cycle layer by two kinds of different lengthss superposeed separately, and said cycle layer is made up of the straight hole and the bifurcated hole of serial connection;
The number of plies of the cycle layer of first kind of length in the cycle layer of said two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～180nm, Kong Changwei 100～1000nm, and the bore dia in bifurcated hole is that the angle between 20～180nm, Kong Changwei 20～200nm, the bifurcated hole is 50～70 degree;
The number of plies of the cycle layer of second kind of length in the cycle layer of said two kinds of different lengthss is 100～200 layers; The bore dia of the straight hole in every layer is 20～80nm, Kong Changwei 60～500nm; The bore dia in bifurcated hole is that the angle between 20～80nm, Kong Changwei 20～100nm, the bifurcated hole is 50～70 degree
Perhaps the bore dia of the straight hole in every layer is 40～180nm, Kong Changwei 300～1000nm, and the bore dia in bifurcated hole is that the angle between 40～180nm, Kong Changwei 60～200nm, the bifurcated hole is 50～70 degree.
2. aluminum oxide photon crystal heterojunction according to claim 1 is characterized in that the plane of the axially bored line of the straight hole in the cycle layer perpendicular to aluminum oxide film.
3. the preparation method of the said aluminum oxide photon crystal heterojunction of claim 1 adopts anonizing, it is characterized in that completing steps is following:
Step 1; Earlier aluminium flake being placed temperature is that 0～25 ℃, concentration are the oxalic acid solution of 0.2～0.4M; Again it is depressed 100～200 cycles of anodic oxidation in period 1 property Asymmetric Electric; Wherein, the waveform of the asymmetric voltage of period 1 property does, voltage prior to 0.5min during according to sinusoidal wave rule from V
LBe increased to V
H, again during 0.5min by V
HLinearity is reduced to 0.71V
H, follow during 4min by 0.71V
HLinearity is reduced to V
L, V wherein
LBe anodic oxidation lower voltage limit, V
HBe the anodic oxidation upper voltage limit, its span is respectively 30V≤V
H≤100V and 0.4V
H≤V
L＜0.71V
HObtain having the alumina wafer of first kind of length cycle layer; Then; Continuation is carried out the anodic oxidation of the asymmetric voltage of property second cycle of 100～200 cycle lifies to the alumina wafer that has first kind of length cycle layer, and the waveform of the asymmetric voltage of property second cycle wherein is identical with the waveform of the asymmetric voltage of period 1 property, and the upper and lower limit of its anodic oxidation voltage is respectively p * V
HAnd p * V
L, the span of p is respectively 0.3≤p＜1 or 1＜p≤3.3, obtains having the alumina wafer of first kind and second kind length cycle layer;
Step 2, the alumina wafer that will have first kind and second kind length cycle layer places Cupric Chloride Solution or tin chloride solution to get rid of the unnecessary aluminium in the back side, makes the aluminum oxide photon crystal heterojunction.
4. the preparation method of aluminum oxide photon crystal heterojunction according to claim 3, the purity that it is characterized in that aluminium flake is >=99.9%.
5. the preparation method of aluminum oxide photon crystal heterojunction according to claim 4, the temperature of its characteristic oxalic acid solution are that 18 ℃, concentration are 0.3M.
6. the preparation method of aluminum oxide photon crystal heterojunction according to claim 5 is characterized in that working as V
HAnd V
LMagnitude of voltage be respectively 53V and 23V, and during p=1.1, p * V
HAnd p * V
LMagnitude of voltage be respectively 58.3V and 25.3V.
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| CN107779921A (en) * | 2017-09-30 | 2018-03-09 | 佛山科学技术学院 | The preparation method of the compound heat absorbing coating of AAO photonic crystal based high-temp-resistant ternary nanos |
| CN107794557A (en) * | 2017-09-30 | 2018-03-13 | 佛山科学技术学院 | A kind of preparation method of light alloy-based photonic crystal Infrared stealthy materials |
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| CN114277419B (en) * | 2021-12-09 | 2023-05-23 | 广东工业大学 | Macroporous-spacing anodic aluminum oxide film based on parabolic equation boosting and preparation method and application thereof |
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