CN102642822B - Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays - Google Patents
Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays Download PDFInfo
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- CN102642822B CN102642822B CN2011100414520A CN201110041452A CN102642822B CN 102642822 B CN102642822 B CN 102642822B CN 2011100414520 A CN2011100414520 A CN 2011100414520A CN 201110041452 A CN201110041452 A CN 201110041452A CN 102642822 B CN102642822 B CN 102642822B
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Abstract
The invention discloses a method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays. The method comprises the following steps: placing an amino functionalization adhesive tape or a phenyl functionalization adhesive tape on the surfaces of the metal-type and semiconductor-type single-walled carbon nanotube arrays located on a substrate, and pressurizing to obtain a metal-type or semiconductor-type single-walled carbon nanotube array on the substrate to complete the separation. The separation method is applied to separating a single-walled carbon nanotube with a length of hundreds of micrometers, and simultaneously maintaining the feature of the single-walled carbon nanotube well without damaging the type of the required single-walled carbon nanotube. For a sample processed by the amino functionalization adhesive tape, the content of the metal-type single-walled carbon nanotube is 90%; and for a sample processed by the phenyl functionalization adhesive tape, the content of the semiconductor-type single-walled carbon nanotube is 85%. The method provided by the invention is simple to operate, low in cost, applicable to separating the single-walled carbon nanotube array with a large area and wide in application prospect.
Description
Technical field
The present invention relates to the method for a kind of SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array.
Background technology
Single Walled Carbon Nanotube has important use and is worth with its excellent performance in nanoelectronics.Yet the various growth methods of Single Walled Carbon Nanotube can only obtain the mixture of metal mold and semi-conductor type, and this has influenced the practical application of Single Walled Carbon Nanotube to a great extent.Up to the present, the separation method of Single Walled Carbon Nanotube roughly can be divided into selective destruction and the solution two big classes that are separated.Though these two class methods can both realize the high efficiency separation of Single Walled Carbon Nanotube, but the former can introduce Single Walled Carbon Nanotube inevitably and destroy, and the latter then only is applicable to the Single Walled Carbon Nanotube of several microns left and right sides length and is difficult to control the pattern that separates the back Single Walled Carbon Nanotube.
Summary of the invention
The method that the purpose of this invention is to provide a kind of SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array.
Amino functional adhesive tape provided by the invention is made up of supporting layer and the tack coat that is positioned on the described supporting layer; The material that constitutes described supporting layer is polydimethyl silane; The material that constitutes described tack coat is aminosilane.
In the above-mentioned amino functional adhesive tape, described aminosilane is selected from least a in 3-aminopropyl triethoxysilane, N-aminoethyl-3-aminopropyl triethoxysilane and the 3-TSL 8330, preferred 3-aminopropyl triethoxysilane; The thickness of described amino functional adhesive tape is 1-5mm, preferred 2.5mm.
The method of the described amino functional adhesive tape of preparation provided by the invention, comprise the steps: the polydimethyl Silan-based Thin Films is bombarded with oxygen plasma, bombard in the ethanolic soln that is placed on aminosilane that finishes and soak, immersion finishes and uses washing with alcohol, obtains described amino functional adhesive tape after drying naturally in air.
In this method, described aminosilane is selected from least a in 3-aminopropyl triethoxysilane, N-aminoethyl-3-aminopropyl triethoxysilane and the 3-TSL 8330, preferred 3-aminopropyl triethoxysilane.Phenyl functionalization adhesive tape provided by the invention is made up of supporting layer and the tack coat that is positioned on the described supporting layer; The material that constitutes described supporting layer is polydimethyl silane; The material that constitutes described tack coat is phenyl silane.
In the above-mentioned phenyl functionalization adhesive tape, described phenyl silane is selected from least a in triethoxyphenylsilan, phenmethyl triethoxyl silane and the phenyltrimethoxysila,e, preferred triethoxyphenylsilan; The thickness of described phenyl functionalization adhesive tape is 1-5mm, preferred 2.5mm.
The method of the described phenyl functionalization of preparation provided by the invention adhesive tape, comprise the steps: the polydimethyl Silan-based Thin Films is bombarded with oxygen plasma, bombard in the ethanolic soln that is placed on phenyl silane that finishes and soak, immersion finishes and uses washing with alcohol, obtains described phenyl functionalization adhesive tape after drying naturally in air.
In this method, the thickness of described polydimethyl Silan-based Thin Films is the 1-5 millimeter, preferred 2.5 millimeters; In the described implant steps, vacuum tightness is 10
-2Pa, air flow quantity is 12-18sccm, preferred 15sccm, power is 80-90W, preferred 90W, and the time is 1-15 minute, described phenyl silane is selected from least a in oxygen base phenyl silane, phenmethyl triethoxyl silane and the phenyltrimethoxysila,e, preferred triethoxyphenylsilan.In addition, in above-mentioned amino functional adhesive tape and the phenyl functionalization adhesive tape, as the polydimethyl silane of support layer material (being called for short PDMS) can (desired raw material matrix silicone elastomer (main component is octamethylcyclotetrasiloxane) and solidifying agent (main component is four (trimethylsiloxy) silane) be all available from Dow CorningCorporation about the specification sheets of PDMS preparation according to Dow Corning Corporation, Midland Michigan USA, production code member is SYLGARD 184) preparation gets.This preparation method is ordinary method, as getting by the method preparation that comprises the steps: microslide is put into the 100ml beaker, successively ultrapure water, acetone, ethanol, ultrapure water, in ultrasonic 10min, in baking oven 120 ℃ with after the oven dry of slide glass and beaker and being cooled to room temperature, with silicone elastomer and solidifying agent according to certain mass than mixing in the beaker of pouring oven dry into, leave standstill 1h after stirring 20min, slowly be poured into the slide surface of oven dry then, and in baking oven, toasted 1 hour, obtain the polydimethyl Silan-based Thin Films, thickness is 2.5mm.In this method, the mass ratio of silicone elastomer and solidifying agent can be 9: 1-11: 1, and preferred 10: 1; In the baking procedure, temperature is 80-150 ℃, and preferred 90 ℃, the time is 10-90 minute, preferred 60 minutes.
The method of SEPARATION OF GOLD genotype provided by the invention and semi-conductor type single-walled carbon nano tube array, comprise the steps: described amino functional adhesive tape is placed the surface that is positioned at suprabasil described metal mold and semi-conductor type single-walled carbon nano tube array, after the pressurization, obtain the metal single-wall carbon nano pipe array in described substrate, finish the method for described SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array;
Perhaps, described phenyl functionalization adhesive tape is placed the surface that is positioned at suprabasil described metal mold and semi-conductor type single-walled carbon nano tube array, after the pressurization, obtain the semi-conductor type single-walled carbon nano tube array in described substrate, finish the method for described SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array.
The principle of above-mentioned separation method as shown in Figure 1, Fig. 2 is amino functional adhesive tape provided by the invention and phenyl functionalization adhesive tape.Peculiar amino functional group on the amino functional adhesive tape can the selective adsorption semi-conductor type single-walled carbon nano tube, and the phenyl functional group on the phenyl functionalization adhesive tape, can selective adsorption metal single-wall carbon nanotube.In the described pressurization step, pressure is 10-30N, preferred 20N, and the time is 1-5 minute, preferred 2 minutes; In the described single-wall carbon nanotube array, the length of Single Walled Carbon Nanotube is the 1-500 micron, preferably is the 50-400 micron, more preferably is 200 microns; Described substrate all is selected from least a in aluminum oxide and the quartz, preferred aluminum oxide.
Separation method provided by the invention is applicable to the various Single Walled Carbon Nanotube of separating hundreds of microns length, the pattern of maintenance Single Walled Carbon Nanotube that simultaneously can be fabulous, and can not destroy the type of needed Single Walled Carbon Nanotube.Through the sample after the processing of amino functional adhesive tape, the content of metal single-wall carbon nanotube is 90%; Through the sample after the processing of phenyl functionalization adhesive tape, the content of semi-conductor type single-walled carbon nano tube is 85%.In addition, separation method provided by the invention, simple to operate, with low cost, be applicable to the separation of large-area single-wall carbon nanotube array, have broad application prospects.
Description of drawings
Fig. 1 is the principle schematic of SEPARATION OF GOLD genotype of the present invention and semi-conductor type single-walled carbon nano tube array, and wherein, 1 is the metal single-wall carbon nanotube, and 2 is semi-conductor type single-walled carbon nano tube, and 3 is phenyl functionalization adhesive tape, and 4 is the amino functional adhesive tape.
Fig. 2 is the structural representation of amino functional adhesive tape used in the present invention (A) and phenyl functionalization adhesive tape (B); Among Fig. 2 A and the B, 1 is supporting layer polydimethyl silylation layer, and 2 are the hydroxyl functional group layer that belongs to a supporting layer part, and 3 are tack coat aminosilane layer, and 4 are substrate.
Fig. 3 separates the operation chart that obtains the metal single-wall carbon nano pipe array for the present invention uses the amino functional adhesive tape, and the scanning electronic microscope of the array that obtains, atomic force microscope, and microcell resonance strengthens the characterization result of Raman spectrum; Wherein, 1 is the amino functional adhesive tape, and 2 is the primary sample zone, and 3 is borderline region, and 4 for handling rear region, and 5 is the Single Walled Carbon Nanotube sample.
Fig. 4 separates the operation chart that obtains the semi-conductor type single-walled carbon nano tube array for the present invention uses phenyl functionalization adhesive tape, and the scanning electronic microscope of the array that obtains, atomic force microscope, and microcell resonance strengthens the characterization result of Raman spectrum; Wherein, 1 is phenyl functionalization adhesive tape, and 2 is the primary sample zone, and 3 is borderline region, and 4 for handling rear region, and 5 is the Single Walled Carbon Nanotube sample.
Fig. 5 strengthens the characterization result of Raman spectrum for the present invention uses the microcell resonance of the metal single-wall carbon nano pipe array that the amino functional adhesive tape obtains under different separation conditions.
Fig. 6 strengthens the characterization result of Raman spectrum for the present invention uses the microcell resonance of the semi-conductor type single-walled carbon nano tube array that phenyl functionalization adhesive tape obtains under different separation conditions.
The metal mold that Fig. 7 obtains under optimum separation condition for the present invention and the electrical properties of semi-conductor type single-walled carbon nano tube array are measured characterization result.
Embodiment
The present invention is further elaborated below in conjunction with specific embodiment, but the present invention is not limited to following examples.Described method is ordinary method if no special instructions.Used material, reagent etc. if no special instructions, all can obtain from commercial channels among the following embodiment.
1) microslide is put into the 100ml beaker, successively at ultrapure water, acetone, ethanol, ultrapure water, in ultrasonic 10min, in baking oven 120 ℃ with after the oven dry of slide glass and beaker and being cooled to room temperature, silicone elastomer (main component is octamethylcyclotetrasiloxane) and solidifying agent (main component is (four (trimethylsiloxy) silane)) are poured according to mass ratio at 10: 1 in the beaker of oven dry and mixed, leave standstill 1h after stirring 20min, slowly be poured into the slide surface of oven dry then, and in baking oven 90 ℃ the baking 1h, obtain the polydimethyl Silan-based Thin Films as supporting layer, thickness is 2.5mm.
2) step 1) is prepared gained polydimethyl Silan-based Thin Films and peel off from slide glass, what will contact with slide glass one faces up and is positioned in the plasma clean machine, and system is evacuated to vacuum, and (vacuum tightness is 10
-2Pa) and keep the air flow quantity of 15sccm, make oxygen plasma bombard above-mentioned polydimethyl Silan-based Thin Films surface and bombard 10 minutes respectively with the power of 90W after, take out standby;
3) ethanolic soln of the certain density 3-aminopropyl triethoxysilane of configuration and the ethanolic soln of certain density triethoxyphenylsilan, with step 2) preparation gained film was soaked in respectively in above-mentioned two solution each 10 minutes, all use the alcohol flushing film surface after the taking-up, in air, dry naturally, namely obtain amino functional adhesive tape provided by the invention and phenyl functionalization adhesive tape respectively by the ethanolic soln of above-mentioned 3-aminopropyl triethoxysilane and the ethanolic soln of triethoxyphenylsilan respectively; Above-mentioned two kinds of adhesive tapes are formed by supporting layer and the tack coat that is positioned on this supporting layer, and the thickness of two adhesive tapes is 2.5mm; Wherein, the material that constitutes this supporting layer is that thickness is the polydimethyl Silan-based Thin Films of 2.5mm, and the material that constitutes this tack coat is respectively 3-aminopropyl triethoxysilane and triethoxyphenylsilan.
Above-mentioned steps 2) and in the step 3), carry out oxygen plasma bombardment and solution soaking according to table 1 column data, gained amino and the equal number consecutively of phenyl functionalization adhesive tape are 0,1,2,3,4,5 and 6, the gained optimal conditions is: for the amino functional adhesive tape be: the oxygen plasma bombardment time is that the mass percentage concentration of the ethanolic soln of 10min, aminosilane is 20%, and preparation gained amino functional adhesive tape is numbered 4 under this optimal conditions; For phenyl functionalization adhesive tape be: the oxygen plasma bombardment time is that the mass percentage concentration of the ethanolic soln of 10min, phenyl silane is 10%, and preparation gained phenyl functionalization adhesive tape is numbered 3 under this optimal conditions.As can be known, amino functional adhesive tape adhesive tape will obviously be better than phenyl functionalization adhesive tape adhesive tape to the adhesive power of Single Walled Carbon Nanotube, the original single-wall carbon nanotube array sample rate that amino functional adhesive tape adhesive tape acts on is 10/um, phenyl functionalization adhesive tape adhesive tape then be 2/um.
Table 1, bombardment time and the tabulation of soaking solution concentration value
| The plasma bombardment time (min) | 0 | 1 | 5 | 10 | 10 | 15 | 15 |
| The concentration of the ethanolic soln of aminosilane (mass percentage concentration %) | 0 | 1 | 10 | 10 | 20 | 20 | 30 |
| The concentration of the ethanolic soln of phenyl silane (mass percentage concentration %) | 0 | 1 | 10 | 10 | 20 | 20 | 30 |
6 kinds of amino functional adhesive tapes of his-and-hers watches 1 gained and 6 kinds of phenyl functionalization adhesive tapes carry out Electronic Speculum and Raman spectrum sign, and the gained result as shown in Figure 5 and Figure 6.Wherein, scanning electronic microscope characterization result such as Fig. 5 A, shown in the 6A, under different preparation conditions, two kinds of adhesive tapes all make the density of single-wall carbon nanotube array that variation has in various degree taken place, and trend all is to increase afterwards earlier to reduce (wherein, this variable density is to measure as follows to calculate and get: adopt scanning electronic microscope to characterize to the primary sample zone with through functionalization adhesive tape processing rear region, can obtain the Single Walled Carbon Nanotube density in two zones respectively, if the primary sample areal concentration is A, handling rear region density through the functionalization adhesive tape is B, and then variable density is (A-B)/A); Microcell resonance strengthens Raman spectrum characterization result such as Fig. 5 B, shown in the 6B, under different preparation conditions, two kinds of adhesive tapes all make in the single-wall carbon nanotube array content of metal mold and semi-conductor type single-walled carbon nano tube that variation has in various degree taken place, and (the annular data are taken to the primary sample zone among the figure, triangle number is handled rear region according to being taken to), and the variable density of trend and single-wall carbon nanotube array is consistent.
The amino functional adhesive tape that embodiment 1 preparation institute call number is followed successively by 1-6 places and is arranged in the lip-deep metal mold of alumina substrate and semi-conductor type single-walled carbon nano tube array (length of this array Single Walled Carbon Nanotube is 200 microns) surface, after applying the pressure effect 2min of 20N, this amino functional adhesive tape meeting selective attachment semi-conductor type single-walled carbon nano tube, thereby, obtain the metal single-wall carbon nano pipe array at this alumina base basal surface, finish the separation of two types of single-wall carbon nanotube arrays.
According to last identical method, the amino functional adhesive tape that only numbering is followed successively by 1-6 replaces with the phenyl functionalization adhesive tape that numbering is followed successively by 1-6, can be by phenyl functionalization adhesive tape selective attachment metal single-wall carbon nanotube, thereby, obtain the semi-conductor type single-walled carbon nano tube array at this alumina base basal surface, finish the separation of two types of single-wall carbon nanotube arrays.
Be the convenient effect of separating that characterizes, in above-mentioned sepn process, adhesive tape only contact as sample be positioned at half of the lip-deep metal mold of alumina substrate and semi-conductor type single-walled carbon nano tube array, half that stays not contact done contrast and characterized, this working method is shown in Fig. 3 A and Fig. 4 A.
Metal mold and the semi-conductor type single-walled carbon nano tube array that obtains carried out scanning electronic microscope, atomic force microscope, microcell resonance enhancing Raman spectrum and electrical properties measurement sign, and the gained result is as follows.
The scanning electronic microscope characterization result of the metal single-wall carbon nano pipe array that use amino functional adhesive tape obtains is shown in Fig. 3 B, single-wall carbon nanotube array after treatment, obvious variation has taken place in its density, illustrates that a large amount of Single Walled Carbon Nanotube is removed by adhesive tape.Atomic force microscope characterization result such as Fig. 3 C, shown in the 3D, wherein 3C is taken to the primary sample zone, and 3D is taken to the processing rear region.Except observing obvious variable density, the pattern of single-wall carbon nanotube array obtains very fabulous maintenance.Microcell resonance strengthens Raman spectrum characterization result such as Fig. 3 E, and shown in the 3F, wherein 3E is taken to the primary sample zone, and 3F is taken to the processing rear region.Learn that from Raman spectrum data use the amino functional adhesive tape to carry out the separation of Single Walled Carbon Nanotube, the content of metal single-wall carbon nanotube is improved significantly on alumina substrate.
The scanning electronic microscope characterization result of the semi-conductor type single-walled carbon nano tube array that use phenyl functionalization adhesive tape obtains is shown in Fig. 4 B, single-wall carbon nanotube array after treatment, obvious variation has taken place in its density equally, illustrates that a large amount of Single Walled Carbon Nanotube is removed by adhesive tape.Atomic force microscope characterization result such as Fig. 4 C, shown in the 4D, wherein 4C is taken to the primary sample zone, and 4D is taken to the processing rear region.Similar to amino functional adhesive tape result, except observing obvious variable density, the pattern of single-wall carbon nanotube array obtains very fabulous maintenance.Microcell resonance strengthens Raman spectrum characterization result such as Fig. 4 E, and shown in the 4F, wherein 4E is taken to the primary sample zone, and 4F is taken to the processing rear region.Learn from Raman spectrum data, use the amino functional adhesive tape to carry out the separation of Single Walled Carbon Nanotube, be improved significantly at the content of alumina substrate semiconductor-on-insulator type Single Walled Carbon Nanotube.
Separate the metal mold and the semi-conductor type single-walled carbon nano tube array that obtain with the phenyl functionalization adhesive tape that is numbered 3 and transfer to respectively on the silicon base with 800nm thick silicon dioxide zone of oxidation being numbered 4 amino functional adhesive tape by embodiment 1 preparation gained respectively, utilize electron beam exposure and hot evaporation that Single Walled Carbon Nanotube is prepared into field-effect transistor structure and carry out the electrical properties measurement, the gained result as shown in Figure 7.Among Fig. 7, on-off ratio is conducting state strength of current I
ONTo OFF state strength of current I
OFFRatio, frequency is that respective switch is than the radical of following Single Walled Carbon Nanotube; Shown in Fig. 7 A, the metal single-wall content of carbon nanotubes is 90% in the single-wall carbon nanotube array after process amino functional adhesive tape is handled, shown in Fig. 7 B, be 85% through semi-conductor type single-walled carbon nano tube content in the single-wall carbon nanotube array after the processing of phenyl functionalization adhesive tape.
Among this embodiment, the metal mold of the sample that is used as and semi-conductor type single-walled carbon nano tube array are to be prepared as follows and to get:
1) cleaning of substrate: select for use amino functional adhesive tape face (11-20) alumina single crystal sheet as the growth substrate of single-wall carbon nanotube array, be cut to 0.4 * 0.6cm
2The small pieces (the 0.6cm limit is parallel to [1-100] direction) of size, ultrasonic 10min in ultrapure water, acetone, ethanol, ultrapure water, concentrated hydrochloric acid successively, and then with ultrapure water rinsing 5 times repeatedly.Substrate front surface after cleaning is placed on the filter paper up, in baking oven, dries or dry up with high pure nitrogen for 170 ℃.
2) annealing of substrate: retort furnace is put in the substrate that step 1) obtains, in air, carried out high temperature annealing.Temperature programmed control 1h is warming up to 1100 ℃ from room temperature, and under this temperature constant temperature 8h, then 10h be cooled to 300 ℃ more naturally the cooling be cooled to room temperature, stand-by.
3) in step 2) contain the Fe (OH) of 3mmol/L in the substrate that obtains with the rotating speed spin coating of 2000r/s
3The ethanolic soln of colloid is as catalyzer, and the spin coating time is 1min.Repeating step 2) once, the catalyzer to institute's spin coating carries out oxide treatment.
4) substrate that has catalyzer of step 3) preparation is put into the silica tube of low-pressure chemical vapor deposition system and made the 0.6cm limit be parallel to air flow line.System is evacuated to vacuum (8*10
-2Torr.), feed high-purity Ar again and make system air pressure rise to 700torr., keep this pressure then and make system be warming up to 850 ℃ from room temperature.
5) under 850 ℃, feed 2200sccmAr and 500sccm H
2Mixed gas 5min with reducing catalyst.Keeping this Ar and H
2Under the constant situation of flow, feed 50sccm amino functional adhesive tape r and take ethanol out of to the ethanol jar and be used for growing single-wall carbon nano tube, growth time is 5min.
6) close the Ar that feeds in the ethanol jar growth response is finished, close amino functional adhesive tape r and H simultaneously
2Mixed gas and vacuumize (8*10
-2Torr.).Charge into argon gas and make system return to normal pressure and be cooled to room temperature naturally, the taking-up sample obtains metal mold and semi-conductor type single-walled carbon nano tube array, and the length of Single Walled Carbon Nanotube is 200 microns in this array.
Claims (16)
1. an amino functional adhesive tape is made up of supporting layer and the tack coat that is positioned on the described supporting layer; The material that constitutes described supporting layer is polydimethyl silane; The material that constitutes described tack coat is aminosilane.
2. adhesive tape according to claim 1 is characterized in that: described aminosilane is selected from least a in 3-aminopropyl triethoxysilane, N-aminoethyl-3-aminopropyl triethoxysilane and the 3-TSL 8330; The thickness of described amino functional adhesive tape is 1-5mm.
3. adhesive tape according to claim 2, it is characterized in that: described aminosilane is selected from the 3-aminopropyl triethoxysilane; The thickness of described amino functional adhesive tape is 2.5mm.
4. method for preparing each described amino functional adhesive tape among the claim 1-3, comprise the steps: the polydimethyl Silan-based Thin Films is bombarded with oxygen plasma, bombard in the ethanolic soln that is placed on aminosilane that finishes and soak, immersion finishes and uses washing with alcohol, obtains described amino functional adhesive tape after drying naturally in air.
5. method according to claim 4, it is characterized in that: the thickness of described polydimethyl Silan-based Thin Films is the 1-5 millimeter; In the described implant steps, vacuum tightness is 10
-2Pa, air flow quantity is 12-18sccm, and power is 80-90W, and the time is 1-15 minute; Aminosilane is selected from least a in 3-aminopropyl triethoxysilane, N-aminoethyl-3-aminopropyl triethoxysilane and the 3-TSL 8330.
6. method according to claim 5, it is characterized in that: the thickness of described polydimethyl Silan-based Thin Films is 2.5 millimeters; In the described implant steps, air flow quantity is 15sccm, and power is selected from the 3-aminopropyl triethoxysilane for the 90W aminosilane.
7. a phenyl functionalization adhesive tape is made up of supporting layer and the tack coat that is positioned on the described supporting layer; The material that constitutes described supporting layer is polydimethyl silane; The material that constitutes described tack coat is phenyl silane.
8. adhesive tape according to claim 7 is characterized in that: described phenyl silane is selected from least a in triethoxyphenylsilan, phenmethyl triethoxyl silane and the phenyltrimethoxysila,e; The thickness of described phenyl functionalization adhesive tape is 1-5mm.
9. adhesive tape according to claim 8, it is characterized in that: described phenyl silane is selected from triethoxyphenylsilan; The thickness of described phenyl functionalization adhesive tape is 2.5mm.
10. method for preparing each described phenyl functionalization adhesive tape among the claim 7-9, comprise the steps: the polydimethyl Silan-based Thin Films is bombarded with oxygen plasma, bombard in the ethanolic soln that is placed on phenyl silane that finishes and soak, immersion finishes and uses washing with alcohol, obtains described phenyl functionalization adhesive tape after drying naturally in air.
11. method according to claim 10 is characterized in that: the thickness of described polydimethyl Silan-based Thin Films is the 1-5 millimeter; In the described implant steps, vacuum tightness is 10
-2Pa, air flow quantity is 12-18sccm, and power is 80-90W, and the time is 1-15 minute, and described phenyl silane is selected from least a in triethoxyphenylsilan, phenmethyl triethoxyl silane and the phenyltrimethoxysila,e.
12. method according to claim 11 is characterized in that: the thickness of described polydimethyl Silan-based Thin Films is 2.5 millimeters; In the described implant steps, air flow quantity is 15sccm, and power is that the described phenyl silane of 90W is selected from triethoxyphenylsilan.
13. the method for a SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array, comprise the steps: each described amino functional adhesive tape among the claim 1-3 is placed the surface that is positioned at suprabasil described metal mold and semi-conductor type single-walled carbon nano tube array, after the pressurization, obtain the metal single-wall carbon nano pipe array in described substrate, finish the method for described SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array;
Perhaps, each described phenyl functionalization adhesive tape among the claim 7-9 is placed the surface that is positioned at suprabasil described metal mold and semi-conductor type single-walled carbon nano tube array, after the pressurization, obtain the semi-conductor type single-walled carbon nano tube array in described substrate, finish the method for described SEPARATION OF GOLD genotype and semi-conductor type single-walled carbon nano tube array.
14. method according to claim 13 is characterized in that: in the described pressurization step, pressure is 10-30N, and the time is 1-5 minute; In the described single-wall carbon nanotube array, the length of Single Walled Carbon Nanotube is the 1-500 micron; Described substrate all is selected from least a in aluminum oxide and the quartz.
15. method according to claim 14 is characterized in that: in the described pressurization step, pressure is 20N, and the time is 2 minutes; In the described single-wall carbon nanotube array, the length of Single Walled Carbon Nanotube is the 50-400 micron; Described substrate all is selected from aluminum oxide.
16. method according to claim 15 is characterized in that: in the described single-wall carbon nanotube array, the length of Single Walled Carbon Nanotube is 200 microns.
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| CN113484469B (en) * | 2021-06-30 | 2022-11-18 | 中国科学院青海盐湖研究所 | In-situ characterization method for nano-scale phase separation of phase change energy storage material of hydrated salt system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168405A (en) * | 1996-04-26 | 1997-12-24 | 森蒂内尔产品公司 | Cross-linked polyolefin tape |
| CN1886332A (en) * | 2003-10-17 | 2006-12-27 | 英特尔公司 | Method of sorting carbon nanotubes |
| CN101148253A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Metallicity and semiconductivity single-wall carbon nanotube synchronous separating and assembling method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7150865B2 (en) * | 2003-03-31 | 2006-12-19 | Honda Giken Kogyo Kabushiki Kaisha | Method for selective enrichment of carbon nanotubes |
| US8404207B2 (en) * | 2007-12-10 | 2013-03-26 | National Institute Of Advanced Industrial Science And Technology | Method for simply separatng carbon nanotube |
-
2011
- 2011-02-21 CN CN2011100414520A patent/CN102642822B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168405A (en) * | 1996-04-26 | 1997-12-24 | 森蒂内尔产品公司 | Cross-linked polyolefin tape |
| CN1886332A (en) * | 2003-10-17 | 2006-12-27 | 英特尔公司 | Method of sorting carbon nanotubes |
| CN101148253A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Metallicity and semiconductivity single-wall carbon nanotube synchronous separating and assembling method |
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