CN102640314A - 耦合结构及其形成方法 - Google Patents
耦合结构及其形成方法 Download PDFInfo
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- CN102640314A CN102640314A CN2010800552276A CN201080055227A CN102640314A CN 102640314 A CN102640314 A CN 102640314A CN 2010800552276 A CN2010800552276 A CN 2010800552276A CN 201080055227 A CN201080055227 A CN 201080055227A CN 102640314 A CN102640314 A CN 102640314A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/10—Adjustable resistors adjustable by mechanical pressure or force
- H01C10/103—Adjustable resistors adjustable by mechanical pressure or force by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator
Landscapes
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Measuring Fluid Pressure (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/632,154 | 2009-12-07 | ||
US12/632,154 US8247947B2 (en) | 2009-12-07 | 2009-12-07 | Coupling piezoelectric material generated stresses to devices formed in integrated circuits |
PCT/EP2010/068872 WO2011069920A1 (en) | 2009-12-07 | 2010-12-03 | Coupling structure and method of forming such |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102640314A true CN102640314A (zh) | 2012-08-15 |
CN102640314B CN102640314B (zh) | 2014-05-07 |
Family
ID=43629090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080055227.6A Active CN102640314B (zh) | 2009-12-07 | 2010-12-03 | 耦合结构及其形成方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8247947B2 (zh) |
CN (1) | CN102640314B (zh) |
DE (1) | DE112010004700B4 (zh) |
GB (1) | GB2485749B (zh) |
WO (1) | WO2011069920A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106814912A (zh) * | 2017-01-17 | 2017-06-09 | 京东方科技集团股份有限公司 | 一种压力触控传感器、显示装置及其驱动方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8247947B2 (en) | 2009-12-07 | 2012-08-21 | International Business Machines Corporation | Coupling piezoelectric material generated stresses to devices formed in integrated circuits |
US20130009668A1 (en) * | 2011-07-06 | 2013-01-10 | International Business Machines Corporation | 4-terminal piezoelectronic transistor (pet) |
US9058868B2 (en) | 2012-12-19 | 2015-06-16 | International Business Machines Corporation | Piezoelectronic memory |
US9941472B2 (en) | 2014-03-10 | 2018-04-10 | International Business Machines Corporation | Piezoelectronic device with novel force amplification |
WO2015137256A1 (ja) * | 2014-03-14 | 2015-09-17 | 独立行政法人科学技術振興機構 | ピエゾ抵抗体をチャネルに用いたトランジスタおよび電子回路 |
US9251884B2 (en) * | 2014-03-24 | 2016-02-02 | International Business Machines Corporation | Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence |
US9425381B2 (en) * | 2014-08-26 | 2016-08-23 | International Business Machines Corporation | Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers |
US9287489B1 (en) | 2014-10-31 | 2016-03-15 | International Business Machines Corporation | Piezoelectronic transistor with co-planar common and gate electrodes |
US9293687B1 (en) | 2014-10-31 | 2016-03-22 | International Business Machines Corporation | Passivation and alignment of piezoelectronic transistor piezoresistor |
US9472368B2 (en) | 2014-10-31 | 2016-10-18 | International Business Machines Corporation | Piezoelectronic switch device for RF applications |
US9263664B1 (en) | 2014-10-31 | 2016-02-16 | International Business Machines Corporation | Integrating a piezoresistive element in a piezoelectronic transistor |
US9461236B1 (en) * | 2015-05-22 | 2016-10-04 | Rockwell Collins, Inc. | Self-neutralized piezoelectric transistor |
US10153421B1 (en) * | 2016-02-09 | 2018-12-11 | Rockwell Collins, Inc. | Piezoelectric transistors with intrinsic anti-parallel diodes |
US10332753B2 (en) * | 2017-01-13 | 2019-06-25 | International Business Machines Corporation | Wet etching of samarium selenium for piezoelectric processing |
US10573482B2 (en) | 2017-01-30 | 2020-02-25 | International Business Machines Corporation | Piezoelectric vacuum transistor |
CN109212326B (zh) * | 2018-10-24 | 2020-10-02 | 清华大学 | 基于压电效应和压阻效应多模态耦合的微型电场传感器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4419598A (en) * | 1980-12-15 | 1983-12-06 | Thomson-Csf | Piezoelectrically controlled piezoresistor |
US6548942B1 (en) * | 1997-02-28 | 2003-04-15 | Texas Instruments Incorporated | Encapsulated packaging for thin-film resonators and thin-film resonator-based filters having a piezoelectric resonator between two acoustic reflectors |
CN1885584A (zh) * | 2005-06-22 | 2006-12-27 | 昆明凯旋利科技有限公司 | 压力感知型无触点开关 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3138726A (en) | 1960-11-17 | 1964-06-23 | Gulton Ind Inc | Transducer |
GB1149589A (en) * | 1966-11-15 | 1969-04-23 | Matsushita Electric Ind Co Ltd | Thin film active element |
US3739201A (en) * | 1971-06-09 | 1973-06-12 | Zenith Radio Corp | High voltage regulator device |
US5231326A (en) | 1992-01-30 | 1993-07-27 | Essex Electronics, Inc. | Piezoelectric electronic switch |
US5883419A (en) * | 1994-11-17 | 1999-03-16 | Electronics And Telecommunications Research Institute | Ultra-thin MO-C film transistor |
KR0174872B1 (ko) | 1995-12-08 | 1999-02-01 | 양승택 | 압 저항 소자 및 그의 제조방법 |
KR0176237B1 (ko) | 1995-12-08 | 1999-03-20 | 양승택 | 박막 트랜지스터 및 그의 제조방법 |
US6083762A (en) * | 1996-05-31 | 2000-07-04 | Packard Instruments Company | Microvolume liquid handling system |
FR2786005B1 (fr) | 1998-11-17 | 2002-04-12 | Commissariat Energie Atomique | Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques |
US7253488B2 (en) | 2002-04-23 | 2007-08-07 | Sharp Laboratories Of America, Inc. | Piezo-TFT cantilever MEMS |
FR2875337A1 (fr) | 2004-09-13 | 2006-03-17 | Picogiga Internat Soc Par Acti | Structures hemt piezoelectriques a desordre d'alliage nul |
US7221579B2 (en) | 2005-06-13 | 2007-05-22 | International Business Machines Corporation | Method and structure for high performance phase change memory |
US7646006B2 (en) | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US7394089B2 (en) | 2006-08-25 | 2008-07-01 | International Business Machines Corporation | Heat-shielded low power PCM-based reprogrammable EFUSE device |
JP2008190931A (ja) * | 2007-02-02 | 2008-08-21 | Wacoh Corp | 加速度と角速度との双方を検出するセンサ |
US7411818B1 (en) | 2007-02-07 | 2008-08-12 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures using externally heated phase change material |
EP1970975B1 (en) | 2007-03-14 | 2011-07-20 | Delphi Technologies Holding S.à.r.l. | Reducing stress gradients within piezoelectric actuators |
US8159854B2 (en) * | 2009-06-30 | 2012-04-17 | International Business Machines Corporation | Piezo-effect transistor device and applications |
US8247947B2 (en) | 2009-12-07 | 2012-08-21 | International Business Machines Corporation | Coupling piezoelectric material generated stresses to devices formed in integrated circuits |
-
2009
- 2009-12-07 US US12/632,154 patent/US8247947B2/en active Active
-
2010
- 2010-12-03 DE DE112010004700.6T patent/DE112010004700B4/de active Active
- 2010-12-03 GB GB1205373.2A patent/GB2485749B/en not_active Expired - Fee Related
- 2010-12-03 CN CN201080055227.6A patent/CN102640314B/zh active Active
- 2010-12-03 WO PCT/EP2010/068872 patent/WO2011069920A1/en active Application Filing
-
2012
- 2012-06-26 US US13/532,991 patent/US8405279B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4419598A (en) * | 1980-12-15 | 1983-12-06 | Thomson-Csf | Piezoelectrically controlled piezoresistor |
US6548942B1 (en) * | 1997-02-28 | 2003-04-15 | Texas Instruments Incorporated | Encapsulated packaging for thin-film resonators and thin-film resonator-based filters having a piezoelectric resonator between two acoustic reflectors |
CN1885584A (zh) * | 2005-06-22 | 2006-12-27 | 昆明凯旋利科技有限公司 | 压力感知型无触点开关 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106814912A (zh) * | 2017-01-17 | 2017-06-09 | 京东方科技集团股份有限公司 | 一种压力触控传感器、显示装置及其驱动方法 |
US10564757B2 (en) | 2017-01-17 | 2020-02-18 | Boe Technology Group Co., Ltd. | Force touch sensor, display device and driving method thereof |
CN106814912B (zh) * | 2017-01-17 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种压力触控传感器、显示装置及其驱动方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120270353A1 (en) | 2012-10-25 |
US8405279B2 (en) | 2013-03-26 |
WO2011069920A1 (en) | 2011-06-16 |
US8247947B2 (en) | 2012-08-21 |
GB2485749A (en) | 2012-05-23 |
US20110133603A1 (en) | 2011-06-09 |
GB2485749B (en) | 2012-10-03 |
CN102640314B (zh) | 2014-05-07 |
DE112010004700T5 (de) | 2012-10-31 |
DE112010004700B4 (de) | 2015-10-22 |
GB201205373D0 (en) | 2012-05-09 |
GB2485749A8 (en) | 2012-09-12 |
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Effective date of registration: 20171108 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171108 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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