CN102637637B - 一种薄膜晶体管阵列基板及其制作方法 - Google Patents
一种薄膜晶体管阵列基板及其制作方法 Download PDFInfo
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- CN102637637B CN102637637B CN201210132082.6A CN201210132082A CN102637637B CN 102637637 B CN102637637 B CN 102637637B CN 201210132082 A CN201210132082 A CN 201210132082A CN 102637637 B CN102637637 B CN 102637637B
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- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 238000009413 insulation Methods 0.000 claims description 36
- 239000004973 liquid crystal related substance Substances 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 139
- 239000000463 material Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210132082.6A CN102637637B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
PCT/CN2012/075250 WO2013159398A1 (zh) | 2012-04-28 | 2012-05-09 | 一种薄膜晶体管阵列基板及其制作方法 |
US13/574,243 US8703559B2 (en) | 2012-04-28 | 2012-05-09 | Thin-film transistor array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210132082.6A CN102637637B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN102637637A CN102637637A (zh) | 2012-08-15 |
CN102637637B true CN102637637B (zh) | 2014-03-26 |
Family
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CN201210132082.6A Active CN102637637B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
Country Status (2)
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CN (1) | CN102637637B (zh) |
WO (1) | WO2013159398A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102637638B (zh) * | 2012-04-28 | 2014-02-26 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管阵列基板及其制作方法 |
KR102344716B1 (ko) * | 2014-07-31 | 2021-12-30 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 터치 패널용 도전성 기판 및 터치 패널용 도전성 기판 제조방법 |
CN104536611B (zh) * | 2014-12-31 | 2017-09-22 | 深圳市华星光电技术有限公司 | 一种阵列基板的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276106A (zh) * | 2007-03-28 | 2008-10-01 | Lg.菲利浦Lcd株式会社 | 共平面开关模式液晶显示面板及其制造方法 |
Family Cites Families (7)
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KR101167304B1 (ko) * | 2004-12-31 | 2012-07-19 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법 |
CN1313876C (zh) * | 2005-01-19 | 2007-05-02 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器的像素结构的制造方法 |
KR100792300B1 (ko) * | 2005-11-11 | 2008-01-07 | 비오이 하이디스 테크놀로지 주식회사 | 반투과형 액정표시장치의 어레이기판 제조방법 |
KR20070077698A (ko) * | 2006-01-24 | 2007-07-27 | 삼성전자주식회사 | 표시장치 및 그 제조방법 |
KR101183361B1 (ko) * | 2006-06-29 | 2012-09-14 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
CN100495178C (zh) * | 2006-07-21 | 2009-06-03 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板像素结构及其制造方法 |
US8896794B2 (en) * | 2009-12-31 | 2014-11-25 | Lg Display Co., Ltd. | Liquid crystal display device and method for fabricating the same |
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2012
- 2012-04-28 CN CN201210132082.6A patent/CN102637637B/zh active Active
- 2012-05-09 WO PCT/CN2012/075250 patent/WO2013159398A1/zh active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276106A (zh) * | 2007-03-28 | 2008-10-01 | Lg.菲利浦Lcd株式会社 | 共平面开关模式液晶显示面板及其制造方法 |
Also Published As
Publication number | Publication date |
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CN102637637A (zh) | 2012-08-15 |
WO2013159398A1 (zh) | 2013-10-31 |
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Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Effective date of registration: 20210322 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |
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