CN102633227B - 一种mems惯性传感器结构压膜阻尼可调装置 - Google Patents
一种mems惯性传感器结构压膜阻尼可调装置 Download PDFInfo
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- CN102633227B CN102633227B CN201210071296.7A CN201210071296A CN102633227B CN 102633227 B CN102633227 B CN 102633227B CN 201210071296 A CN201210071296 A CN 201210071296A CN 102633227 B CN102633227 B CN 102633227B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
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- 239000000758 substrate Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
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- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000013016 damping Methods 0.000 claims description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
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CN201210071296.7A CN102633227B (zh) | 2012-03-16 | 2012-03-16 | 一种mems惯性传感器结构压膜阻尼可调装置 |
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CN201210071296.7A CN102633227B (zh) | 2012-03-16 | 2012-03-16 | 一种mems惯性传感器结构压膜阻尼可调装置 |
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CN102633227A CN102633227A (zh) | 2012-08-15 |
CN102633227B true CN102633227B (zh) | 2014-07-23 |
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CN201210071296.7A Expired - Fee Related CN102633227B (zh) | 2012-03-16 | 2012-03-16 | 一种mems惯性传感器结构压膜阻尼可调装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102798387B (zh) * | 2012-09-07 | 2016-03-02 | 中北大学 | 一种soi基巨压阻效应微陀螺 |
CN111757226B (zh) * | 2020-06-19 | 2022-01-14 | 歌尔微电子有限公司 | Mems芯片及其制作方法、mems麦克风 |
CN111818434B (zh) * | 2020-06-30 | 2022-03-25 | 歌尔微电子有限公司 | Mems传感器和电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1457319A (zh) * | 2001-02-12 | 2003-11-19 | (株)英特利智微 | 陀螺仪及其制造方法 |
CN101334415A (zh) * | 2008-07-22 | 2008-12-31 | 上海电力学院 | Mems密闭腔内电-固-微气流耦合分析的微流体驱动控制方法 |
CN101625372A (zh) * | 2009-08-19 | 2010-01-13 | 北京大学 | 一种具有对称结构的微机械差分电容加速度计 |
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JP3310154B2 (ja) * | 1996-02-23 | 2002-07-29 | 富士電機株式会社 | 半導体式加速度センサおよびその製造方法 |
US20100059911A1 (en) * | 2008-09-05 | 2010-03-11 | Honeywell International Inc. | Adjustable gas damping vibration and shock isolation system |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1457319A (zh) * | 2001-02-12 | 2003-11-19 | (株)英特利智微 | 陀螺仪及其制造方法 |
CN101334415A (zh) * | 2008-07-22 | 2008-12-31 | 上海电力学院 | Mems密闭腔内电-固-微气流耦合分析的微流体驱动控制方法 |
CN101625372A (zh) * | 2009-08-19 | 2010-01-13 | 北京大学 | 一种具有对称结构的微机械差分电容加速度计 |
Non-Patent Citations (1)
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JP特开平9-232594A 1997.09.05 |
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Inventor after: Li Mengwei Inventor after: Cui Min Inventor after: Wang Li Inventor after: Liu Jun Inventor after: Wang Zengyue Inventor after: Chu Weihang Inventor after: Du Kang Inventor after: Bai Xiaoxiao Inventor after: Wang Qi Inventor after: Li Xiguang Inventor before: Liu Jun Inventor before: Wang Li Inventor before: Du Kang Inventor before: Li Mengwei Inventor before: Li Xiguang |
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Free format text: CORRECT: INVENTOR; FROM: LIU JUN WANG LI DU KANG LI MENGWEI LI XIGUANG TO: LI MENGWEI WANG LI LIU JUN WANG ZENGYUE CHU WEIHANG DU KANG BAI XIAOXIAO WANG QI LI XIGUANG CUI MIN |
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