CN102628165B - Method for monitoring abnormity of film deposition process and system thereof - Google Patents
Method for monitoring abnormity of film deposition process and system thereof Download PDFInfo
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- CN102628165B CN102628165B CN201110185574.7A CN201110185574A CN102628165B CN 102628165 B CN102628165 B CN 102628165B CN 201110185574 A CN201110185574 A CN 201110185574A CN 102628165 B CN102628165 B CN 102628165B
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Abstract
The invention discloses a method for monitoring abnormity of a film deposition process and a system thereof so as to determine whether the film deposition process of products is abnormal, further determine the film obtained by deposition is qualified, raise the accuracy of detection of bad products after film deposition, improve product qualified rate and prevent bad products from flowing into the market. The method comprises the following steps of: monitoring at real time during the film deposition process and acquiring mass spectrum information in a film deposition reaction chamber; generating mass spectrum information dynamic change information in dependence on the obtained mass spectrum information; comparing the mass spectrum information dynamic change information with mass spectrum information change information during the normal film deposition process and determining the film deposition process is abnormal or not.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the abnormal method and system of a kind of monitoring film deposition process.
Background technology
At present; in the manufacturing processed of optoelectronic semiconductor and TFT (being thin film transistor); general CVD (the Chemical Vapor Deposition that adopts; chemical vapour deposition) mode carries out thin film deposition, nonmetal insulating protective layer etc.; the gaseous reactant that handle contains formation film element or the steam of liquid reactants and other assist gas that reacts required pass into reaction chamber, in the process of substrate surface generation chemical reaction film former.Because PECVD (being plasma enhanced chemical vapor deposition) makes the ionization of gas that contains film composed atom by microwave or radio frequency etc., form plasma body in part, and plasma chemical activity is very strong, be easy to react, thereby can deposit easily the film of expectation at substrate surface, therefore,, in optoelectronic semiconductor and TFT production technique, more conventional thin film deposition mode is PECVD.
PECVD reaction requires the vacuum tightness of reaction chamber higher, and the pressure general requirement of reaction chamber inside is below 10mtorr, and temperature is between 200 DEG C～400 DEG C.In pecvd process process, because electrology characteristic or the photovoltaic property etc. of semiconductor film (as si film) are larger to the performance impact of semiconducter device, therefore, need to strictly control the condition in deposit film process, as, very high to the sealing requirements in reaction chamber.But in actual mechanical process, may be because a variety of causes causes the stopping property in reaction chamber poor, as: the various parts in reaction chamber are owing to using at higher temperature for a long time, therefore be easy to produce aging problem, after as aging in vacuum rubber valve, it can not well be fastened, thereby causes the poor problem of stopping property; Also as being caused after repeatedly keeping in repair, the parts in reaction chamber cause the problems such as micro-leakage after the poor and parts replacement operation of stopping property.And prior art is in the time carrying out thin film deposition, just before deposition starts, the parameter of the various gases for reacting film former is arranged in the scope of expectation, but do not consider above-mentioned micro-leakage and the poor problem of stopping property, therefore, can not guarantee in actual deposition process in reaction chamber that the concentration of each gas is whether in corresponding scope, thereby can not guarantee whether electrology characteristic, the photovoltaic property etc. of the film that actual deposition obtains meet the requirements.And be difficult to timely discovery for abnormal conditions such as leakage, chamber O-ring leakages in the MFC flow existing in reaction chamber, gas at present, and these abnormal conditions may affect the concentration for the gas of film former, thus the quality of the film that impact is produced.
At present, to the monitoring of Film Growth, major way is by the corresponding device parameter of manual record (parameter comprises RF Power, chamber pressure, gas flow etc.) in the time that each sets step arrival, but device parameter is many, data volume is large, adopt the mode efficiency of this kind of manual record parameter low, the state of conversion unit in time.To depositing the whether abnormal detection mode of film obtaining be at present, the multiple products after thin film deposition are taken a sample test in batches, whether qualified with thickness or the pattern of testing product.Although this kind of mode can realize the detection to film quality to a certain extent, but whether electrology characteristic or photovoltaic property that this kind of mode can not detect film be qualified, therefore, but likely make the thickness of film and pattern all qualified optical characteristics or the underproof product of photovoltaic property flow into market; Therefore, adopt existing detection mode not monitor the quality of the product after deposit film very accurately.
Summary of the invention
The above-mentioned technical problem existing for prior art, the embodiment of the present invention provides a kind of monitoring film deposition process abnormal method and system, in the process of product being carried out to thin film deposition, whether occur extremely to determine, thereby whether the film that further definite deposition obtains is qualified, improve the accuracy that the product after thin film deposition is carried out to bad detection, improve and produce qualification rate, reduce bad product and come into the market.
The method that monitoring film deposition process is abnormal, comprising:
In film deposition process, monitor in real time and obtain the Information in Mass Spectra in film deposition chamber;
Generate Information in Mass Spectra dynamic-change information according to the Information in Mass Spectra getting;
By described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal.
The system that monitoring film deposition process is abnormal, comprising:
Vacuum reaction equipment, for carrying out thin film deposition at its reaction chamber to product;
Information in Mass Spectra watch-dog, for monitoring in real time and obtain the Information in Mass Spectra in film deposition chamber at film deposition process;
Deposition operating device, generates Information in Mass Spectra dynamic-change information for the Information in Mass Spectra getting according to described Information in Mass Spectra watch-dog; And by described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal.
In the embodiment of the present invention, in film deposition process, monitor in real time and obtain the Information in Mass Spectra in film deposition chamber, generate Information in Mass Spectra dynamic-change information according to the Information in Mass Spectra getting, and by described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal, stop thin film deposition flow process as occurred when abnormal, no exceptions is proceeded thin film deposition flow process.Adopt technical solution of the present invention, can determine and in the process of product being carried out to thin film deposition, whether occur extremely, thereby whether the film that further definite deposition obtains is qualified, improve the accuracy that the product after thin film deposition is carried out to bad detection, improve and produce qualification rate, reduce bad product and come into the market.
Brief description of the drawings
Fig. 1 is the structural representation of the system that in the embodiment of the present invention, monitoring film deposition process is abnormal;
Fig. 2 A, Fig. 2 B, Fig. 2 C and Fig. 2 D are respectively the structural representation that deposits operating device in the embodiment of the present invention;
Fig. 3 is the abnormal method flow diagram of monitoring film deposition process in the embodiment of the present invention.
Embodiment
The above-mentioned technical problem existing for prior art, the embodiment of the present invention provides a kind of monitoring film deposition process abnormal method and system, in the process of product being carried out to thin film deposition, whether occur extremely to determine, thereby whether the film that further definite deposition obtains is qualified, improve the accuracy that the product after thin film deposition is carried out to bad detection, improve and produce qualification rate, reduce bad product and come into the market; Method can comprise: in film deposition process, monitor in real time and obtain the Information in Mass Spectra in film deposition chamber; Generate Information in Mass Spectra dynamic-change information according to the Information in Mass Spectra getting; By described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal.
Below in conjunction with Figure of description, technical solution of the present invention is described in detail.
Referring to Fig. 1, be the structural representation of the system that in the embodiment of the present invention, monitoring film deposition process is abnormal, this system can comprise:
Vacuum reaction equipment 11, for carrying out thin film deposition at its reaction chamber to product;
Information in Mass Spectra watch-dog 12, for monitoring in real time and obtain the Information in Mass Spectra in film deposition chamber at film deposition process;
Deposition operating device 13, generates Information in Mass Spectra dynamic-change information for the Information in Mass Spectra getting according to Information in Mass Spectra watch-dog 12; By described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal.
Preferably, deposition operating device 13 determines whether to occur abnormal, can be in the following ways: when in described Information in Mass Spectra dynamic-change information, or both difference identical with film deposition process Information in Mass Spectra change information is under normal circumstances in the difference threshold range of setting, determine film deposition process no exceptions, otherwise determine that generation is abnormal.Concentration taking Information in Mass Spectra as nitrogen/oxygen is example, Information in Mass Spectra watch-dog 12 is carrying out in film deposition process product, the concentration value of nitrogen/oxygen in this process of monitoring in real time, and the concentration value of the nitrogen/oxygen obtaining according to real-time monitoring generates nitrogen/oxygen concentration dynamic changing curve; Again the dynamic changing curve of the nitrogen/oxygen concentration obtaining and the dynamic changing curve that presets nitrogen/oxygen concentration are under normal circumstances compared, if generate nitrogen/oxygen concentration dynamic changing curve compare with the dynamic changing curve of nitrogen/oxygen concentration under normal circumstances identical or set threshold range in, determine no exceptions in film deposition process, otherwise determine that generation is abnormal.
Preferably, when abnormal for guaranteeing to occur, can notify timely operator in film deposition process, the efficiency solving to improve fault, deposition operating device 13 can be further used for: occur when abnormal, to carry out abnormal alarm determining.Alarm sound can arrange flexibly, as being in advance each stage setting alarm sound corresponding with this stage in film deposition process, when occurring at certain one-phase when abnormal, can report to the police by alarm sound corresponding to this stage, be to break down in which in film deposition process so that operator determine fast according to current alarm sound in stage.
Preferably, for further orienting fast the reason breaking down in film deposition process, above-mentioned deposition operating device 13 can be further used for: in the time determining that generation is abnormal, described Information in Mass Spectra dynamic-change information is mated with the abnormal Information in Mass Spectra dynamic-change information record of storage, and by the failure message of the corresponding record matching, be defined as the failure message that causes that current film deposition process is abnormal.So that operator carry out corresponding fault handling according to the failure message of orienting, thereby speed and the accuracy of operator's handling failures are improved.
Preferably, fault subsequent thin film deposition process being occurred for ease of operator places under repair reference is provided, above-mentioned deposition operating device 13 also can be further used for: in the time not matching corresponding record, generate a new record of described Information in Mass Spectra dynamic-change information and corresponding failure message, and upgrade the abnormal Information in Mass Spectra dynamic-change information record of storage.
According to above-mentioned situation, deposition operating device 13 can be divided into analysis and processing unit 131, abnormal deciding means 132 and deposition control unit 133 according to function, as shown in Figure 2 A, wherein:
Analysis and processing unit 131, generates Information in Mass Spectra dynamic-change information for the Information in Mass Spectra that Information in Mass Spectra monitoring unit 12 is got.
Abnormal deciding means 132, for Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances that described analysis and processing unit 131 is generated, determines that whether film deposition process is abnormal.
Abnormal deciding means 132 specifically for: in described Information in Mass Spectra dynamic-change information identical with film deposition process Information in Mass Spectra change information under normal circumstances or both difference set difference threshold range in time, determine film deposition process no exceptions, otherwise determine that generation is abnormal.
Deposition control unit 133, in the time that abnormal deciding means 132 judges that generation is abnormal, controls 11 shut-down operations of vacuum reaction equipment; And, in the time that abnormal deciding means 132 judges no exceptions, control vacuum reaction equipment 11 and continue operation.
Preferably, deposition operating device 13 also can comprise alarm unit 134, as shown in Figure 2 B:
Alarm unit 134, in the time that judging unit 132 judges that generation is abnormal, carries out abnormal alarm.
Preferably, the deposition operating device 13 shown in Fig. 2 A and Fig. 2 B also can comprise failure location unit 135, respectively as shown in Figure 2 C and 2 D shown in FIG.:
Failure location unit 135, in the time that judging unit 132 judges that generation is abnormal, the Information in Mass Spectra dynamic-change information that analysis and processing unit 131 is obtained is mated with the abnormal Information in Mass Spectra dynamic-change information record of storage; By the failure message of the corresponding record matching, be defined as the failure message that causes that current film deposition process is abnormal.
Preferably, above-mentioned failure location unit 135 is further used for, and in the time not matching corresponding record, generates a new record of described Information in Mass Spectra dynamic-change information and corresponding failure message, and upgrades the abnormal Information in Mass Spectra dynamic-change information record of storage.
In the embodiment of the present invention, abnormal Information in Mass Spectra dynamic-change information record and corresponding failure message record thereof can be stored in the abnormal data storehouse of deposition operating device 13.
Preferably, between the Information in Mass Spectra watch-dog 12 in the embodiment of the present invention and deposition operating device 13, can communicate by HUB (concentrator).
In the embodiment of the present invention, vacuum reaction equipment 11 can adopt the mode of CVD or PECVD to carry out thin film deposition to product.Technical solution of the present invention, applicable to various thin film depositions field, as the thin film deposition in the production process of optoelectronic semiconductor, is particularly useful for the thin film deposition in TFT production process.Information in Mass Spectra watch-dog 12 can adopt simple analyser to realize; Deposition operating device 13 can adopt computer realization.
Based on said system structure, the embodiment of the present invention also provides a kind of monitoring film deposition process abnormal method, and the flow process of the method can be referring to Fig. 3.
Referring to 3, be the abnormal method flow diagram of monitoring film deposition process in the embodiment of the present invention, the method comprises:
Information in Mass Spectra in the reaction chamber of vacuum reaction equipment 11 is monitored in real time and obtained to step 301, Information in Mass Spectra watch-dog 12 in film deposition process.
The Information in Mass Spectra that step 302, deposition operating device 13 get according to Information in Mass Spectra watch-dog 12 generates Information in Mass Spectra dynamic-change information.
Step 303, deposition operating device 13, by described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal.
Preferably, in above-mentioned steps 303, deposition operating device 13 determines that whether film deposition process is abnormal, can be in the following ways: when in described Information in Mass Spectra dynamic-change information, or both difference identical with film deposition process Information in Mass Spectra change information is under normal circumstances in the difference threshold range of setting, determine film deposition process no exceptions, otherwise determine that generation is abnormal.
Preferably, when abnormal for guaranteeing to occur, can notify timely operator in film deposition process, the efficiency solving to improve fault, above-mentioned steps 303 also can comprise step: deposition operating device 13 occurs when abnormal, to carry out abnormal alarm at definite film deposition process.
Preferably, for further orienting fast the reason breaking down in film deposition process, above-mentioned steps 303 also can comprise step: deposition operating device 13 occurs when abnormal at definite film deposition process, and described Information in Mass Spectra dynamic-change information is recorded and mated with the abnormal Information in Mass Spectra dynamic-change information of storage; If can match, by the failure message of the corresponding record matching, be defined as the failure message that causes that current film deposition process is abnormal.So that operator carry out corresponding fault handling according to the failure message of orienting, thereby speed and the accuracy of operator's handling failures are improved.
Preferably, fault subsequent thin film deposition process being occurred for ease of operator places under repair reference is provided, above-mentioned steps 303 also can further comprise step: deposition operating device 13 is not in the time matching corresponding record, generate a new record of described Information in Mass Spectra dynamic-change information and corresponding failure message, and upgrade the abnormal Information in Mass Spectra dynamic-change information record of storage.
In the embodiment of the present invention, on the one hand, in film deposition process, monitor in real time and obtain the Information in Mass Spectra in film deposition chamber, generate Information in Mass Spectra dynamic-change information according to the Information in Mass Spectra getting, and by described Information in Mass Spectra dynamic-change information and film deposition process Information in Mass Spectra change information comparison under normal circumstances, determine that whether film deposition process is abnormal, stop carrying out the thin film deposition flow process of next product when abnormal as occurred, no exceptions is proceeded the thin film deposition flow process of next product, can determine and in the process of product being carried out to thin film deposition, whether occur extremely, thereby whether the film that further definite deposition obtains is qualified, improve the accuracy that the product after thin film deposition is carried out to bad detection, improve and produce qualification rate, reducing bad product comes into the market, on the other hand, in the time that generation is abnormal, can carries out abnormal alarm, thereby notify operator in film deposition process, to occur extremely, thereby guarantee that to a certain extent operator can find fault timely, again on the one hand, in the time that generation is abnormal, the Information in Mass Spectra changing conditions of generation can be mated with the abnormal Information in Mass Spectra changing conditions of storing in abnormal data storehouse, in the time that the match is successful, operator are defined as this thin film deposition according to failure message corresponding to abnormal Information in Mass Spectra changing conditions matching abnormal failure message occur, so that can carry out corresponding fault handling to vacuum reaction equipment timely according to the failure message of determining, in addition, if the Information in Mass Spectra changing conditions generating can not match corresponding abnormal Information in Mass Spectra changing conditions in abnormal data storehouse, after this time obtains processing extremely, the Information in Mass Spectra changing conditions of generation and corresponding failure message are stored in abnormal data storehouse, thereby provide reference for occurring to carry out fault handling when abnormal in follow-up film deposition process, so that operator can orient fault cause timely, thereby improve fault handling efficiency.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if these amendments of the present invention and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (7)
1. the abnormal method of monitoring film deposition process, is characterized in that, comprising:
In film deposition process, monitor in real time and obtain in film deposition chamber the concentration value of the nitrogen/oxygen of the film for generating product;
Generate concentration dynamic changing curve according to the concentration value of the nitrogen/oxygen getting;
Described concentration dynamic changing curve and film deposition process concentration dynamic changing curve are under normal circumstances compared, determine that whether film deposition process is abnormal, be specially: described concentration dynamic changing curve identical with film deposition process concentration dynamic changing curve under normal circumstances or both difference set difference threshold range in time, determine film deposition process no exceptions, otherwise determine that generation is abnormal;
Occur when abnormal at definite film deposition process, described concentration dynamic changing curve is mated with the abnormal concentrations dynamic changing curve record of storage;
By the failure message of the corresponding record matching, be defined as the failure message that causes that current film deposition process is abnormal.
2. the method for claim 1, is characterized in that, also comprises:
Occur when abnormal, to carry out abnormal alarm at definite film deposition process.
3. the method for claim 1, is characterized in that, also comprises:
In the time not matching corresponding record, generate a new record of described concentration dynamic changing curve and corresponding failure message, and upgrade the abnormal concentrations dynamic changing curve record of storage.
4. the abnormal system of monitoring film deposition process, is characterized in that, comprising:
Vacuum reaction equipment, for carrying out thin film deposition at its reaction chamber to product;
Information in Mass Spectra watch-dog, in film deposition process is monitored in real time and is obtained film deposition chamber for generating the concentration value of nitrogen/oxygen of film of product;
Deposition operating device, generates concentration dynamic changing curve for the concentration value of nitrogen/oxygen of getting according to described Information in Mass Spectra watch-dog; Described concentration dynamic changing curve and film deposition process concentration dynamic changing curve are under normal circumstances compared, determine that whether film deposition process is abnormal;
Described deposition operating device comprises:
Analysis and processing unit, generates concentration dynamic changing curve for the concentration value of nitrogen/oxygen of getting according to described Information in Mass Spectra watch-dog;
Abnormal deciding means, for in the time that described vacuum reaction equipment carries out thin film deposition and finishes described product, described concentration dynamic changing curve and film deposition process concentration dynamic changing curve are under normal circumstances compared, determine that whether film deposition process is abnormal;
Deposition control unit, in the time that described abnormal deciding means judgement generation is abnormal, controls the shut-down operation of described vacuum reaction equipment; And, in the time that described abnormal deciding means judges no exceptions, control described vacuum reaction equipment and continue operation;
Described abnormal deciding means, for described concentration dynamic changing curve identical with film deposition process concentration dynamic changing curve under normal circumstances or both difference setting difference threshold range in time, determine film deposition process no exceptions, otherwise determine that generation is abnormal;
Failure location unit, in the time that described judging unit judgement generation is abnormal, the concentration dynamic changing curve that described analysis and processing unit is obtained mates with the abnormal concentrations dynamic changing curve of storage record; By the failure message of the corresponding record matching, be defined as the failure message that causes that current film deposition process is abnormal.
5. system as claimed in claim 4, is characterized in that, described deposition operating device also comprises:
Alarm unit, in the time that described judging unit judgement generation is abnormal, carries out abnormal alarm.
6. system as claimed in claim 4, it is characterized in that, described failure location unit is further used for, in the time not matching corresponding record, generate a new record of described concentration dynamic changing curve and corresponding failure message, and upgrade the abnormal concentrations dynamic changing curve record of storage.
7. system as claimed in claim 4, is characterized in that, between described Information in Mass Spectra watch-dog and described deposition operating device, communicates by concentrator.
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| CN201110185574.7A CN102628165B (en) | 2011-07-04 | 2011-07-04 | Method for monitoring abnormity of film deposition process and system thereof |
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| CN201110185574.7A CN102628165B (en) | 2011-07-04 | 2011-07-04 | Method for monitoring abnormity of film deposition process and system thereof |
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| CN102628165B true CN102628165B (en) | 2014-12-10 |
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| CN108161714B (en) * | 2016-12-07 | 2020-04-21 | 上海新微技术研发中心有限公司 | Method and device for on-line monitoring metal deposition and grinding |
| CN111199896A (en) * | 2018-11-16 | 2020-05-26 | 长鑫存储技术有限公司 | Monitoring system and monitoring method for semiconductor manufacturing device |
| CN112684829A (en) * | 2020-12-22 | 2021-04-20 | 同济大学 | Temperature detection control system and method for MPCVD device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364946A (en) * | 2001-01-11 | 2002-08-21 | 大连理工大学 | Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1364946A (en) * | 2001-01-11 | 2002-08-21 | 大连理工大学 | Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology |
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