CN102627251A - Process residual stress based micro two-dimensional vibration energy collector - Google Patents
Process residual stress based micro two-dimensional vibration energy collector Download PDFInfo
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- CN102627251A CN102627251A CN2012101147004A CN201210114700A CN102627251A CN 102627251 A CN102627251 A CN 102627251A CN 2012101147004 A CN2012101147004 A CN 2012101147004A CN 201210114700 A CN201210114700 A CN 201210114700A CN 102627251 A CN102627251 A CN 102627251A
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Abstract
The invention provides a process residual stress based micro two-dimensional vibration energy collector. The process residual stress based micro two-dimensional vibration energy collector comprises a micro cantilever beam, a micro mass block and a substrate, wherein the micro mass block is located at a free end of the micro cantilever beam; the other end of the micro cantilever beam is fixed on the substrate; one or more electrically isolated piezoelectric layers is/are arranged on the surface of the micro cantilever beam; and upper and lower surfaces of each piezoelectric layer are provided with electrodes. The micro cantilever beam is subjected to an initial face outwards bending deformation caused by a process residual stress of silicon micro-fabrication. The micro two-dimensional vibration energy collector can collect environmental vibration energy in a vibration direction which is parallel with a plane where a neutral shaft of the micro cantilever beam exists effectively. The process residual stress based micro two-dimensional vibration energy collector, disclosed by the invention, has the advantages of a simple structure, easy processing and capability of collecting the environmental vibration energy in the vibration direction which is parallel with the plane where the neutral shaft of the micro cantilever beam exists effectively, and is particularly suitable for supplying power to wireless sensing nodes, medical implantation systems, portable electronic products and the like.
Description
Technical field
The invention belongs to the renewable energy source domain, specially refer to MEMS (MEMS) technology and environment kinetic energy converted into little energy technology of electric energy.
Background technology
The little energy (can collector etc.) that converts the physical energy in the environment (like luminous energy, heat energy, mechanical energy etc.) into electric energy like micro solar battery, minisize thermoelectric pond, micro-vibration have low cost, small size, long-life, easy of integration, need not change or plurality of advantages such as charging; Be particularly suitable for being power supplies such as radio sensing network node, receive domestic and international extensive concern.
Micro-vibration can convert the vibrational energy that extensively exists in the environment into electric energy by collector, is the focus of present little energy research.Although the vibration in the actual environment often has three-dimensional feature (like motion of human motion, tree limb etc.); But the micro-vibration of report can collector be an one dimension mostly at present; Can only gather to more efficient the vibrational energy of a direction, the vibrational energy of gathering other both directions hardly.In order to gather the vibrational energy of a plurality of directions simultaneously; The Bartsch of Freiburg, Germany university etc. utilizes the micro two-dimensional resonator to make first electrostatic micro two-dimensional vibrational energy collector; It can gather the vibrational energy of two orthogonal directions in the substrate plane, but the structure more complicated of this collector.
When utilizing films such as low-pressure chemical vapor phase deposition (LPCVD), plasma-reinforced chemical vapor deposition technologies such as (PECVD) manufacturing polycrystalline silicon, silica and silicon nitride; Technological temperature is far above room temperature; Because the thermal coefficient of expansion of different materials is different; The lattice coefficient also there are differences, and there is bigger technology residual stress (comprising thermal stress and intrinsic stress) in the micro-structural that adopts above bulk silicon process to make.The technology residual stress can be decomposed into average residual residue stress and residual stress gradient, and after micro-structural is released, the technology residual stress will cause the micro-structural distortion, even the destruction that causes micro-structural.For the cantilever beam that adopts bulk silicon process to make, residual stress gradient will make it produce out-of-plane bending.Detection, influence and the reduction method of micro fabrication residual stress having been carried out broad research both at home and abroad, generally is through regulating average residual residue stress and the residual stress gradient that parameters such as ion injection kind and dosage, annealing temperature, annealing time are regulated micro fabrication.
Comprise the piezoelectric type micro-vibration of micro-cantilever can collector have simple in structure, be easy to make and the power density advantages of higher; Its theoretical model, processing technology and output performance etc. have been carried out further investigation both at home and abroad; But the micro-cantilever of these collectors all is straight (for the collector that adopts bulk silicon process to make; All adjust residual stress, so that micro-cantilever keeps is straight through technology such as doping, annealing or multi-layer compound structure), there is not the distortion of primary face outside sweep; When not having the external acceleration excitation, micro-cantilever is positioned at substrate surface.This piezoelectric type micro-vibration that comprises micro-cantilever can collector can only gather efficiently direction of vibration perpendicular to the vibrational energy of substrate surface can, the collecting efficiency of vibrational energy that is parallel to substrate surface for direction of vibration is extremely low.
Summary of the invention
The present invention is directed to the actual demand that multi-direction vibrational energy is gathered; The outer anamorphic effect of the micro-structural face that causes in conjunction with the micro fabrication residual stress; A kind of MEMS micro-vibration ability collector new construction is proposed; Can gather the vibrational energy of both direction expeditiously, have broad prospect of application in fields such as wireless sensing, medical science implant system, portable electronic products.
In order to realize the foregoing invention purpose, the present invention takes following technical scheme:
Micro two-dimensional vibrational energy collector based on the technology residual stress; It comprises substrate and parts such as the micro-cantilever made by micro fabrication and little mass; Little mass is positioned at the free end of micro-cantilever; This collector adopts bulk silicon process to make, and after accomplishing structure release, the intrinsic residual stress of micro fabrication will cause micro-cantilever to produce primary face outside sweep (the primary face outside sweep also takes place the neutral axis of micro-cantilever); Adopt micro fabrication to make the piezoelectric layer of one or more electric isolation on the micro-cantilever surface, the upper and lower surface of each piezoelectric layer all adopts micro fabrication to make electrode.Like this; Under the acceleration effect that is parallel to the plane, micro-cantilever neutral axis place with distortion outside the primary face, the inertia force that mass receives all will produce moment of flexure in micro-cantilever, cause the micro-cantilever vibration; Further cause the alternate of each piezoelectric layer stress on the cantilever beam; Because piezo-electric effect will produce electrical potential difference between the upper and lower surface electrode of each piezoelectric layer, utilize this electrical potential difference just can be electric.Therefore, belong to parallel plane ambient vibration ability for direction of vibration and micro-cantilever neutral axis, this micro two-dimensional vibrational energy collector all can be realized gathering expeditiously.
It is thus clear that; The present invention is directed to of the active demand of practical application object to micro two-dimensional vibrational energy collector; Utilize the residual stress of bulk silicon process dexterously, realize the primary face outside sweep distortion of micro-cantilever, further realize highly effective gathering the ability of the ambient vibration in the cantilever beam neutral axis plane.
The present invention has following characteristics:
1, the micro two-dimensional vibrational energy collector of the present invention's proposition adopts bulk silicon process to make; After accomplishing structure release; The intrinsic residual stress of bulk silicon process will cause the primary face outside sweep distortion of micro-cantilever; The present invention has utilized this micro cantilever structure with the distortion of primary face outside sweep just, reaches the highly effective gathering to the ability of the ambient vibration in the cantilever beam neutral axis plane (can be decomposed into the vibrational energy of two mutual vertical direction).
2, the micro two-dimensional vibrational energy collector that proposes of the present invention have simple in structure, size is little, be easy to advantage such as making, has broad prospect of application in fields such as wireless sensing, portable type electronic product, medical science implant systems.
Description of drawings
Fig. 1 is based on the sketch map of the micro two-dimensional vibrational energy collector of technology residual stress
Fig. 2 is the silica sketch map of thermal oxide
Fig. 3 is deposit and patterned silicon nitride sketch map
Fig. 4 is deposit and patterned polysilicon sketch map
Fig. 5 is the silica sketch map of deposit
Fig. 6 is sputter and patterned bottom electrode sketch map
Fig. 7 is preparation and patterned piezoelectric film sketch map
Fig. 8 is sputter and patterned top electrode sketch map
Fig. 9 is the back spatter metal mask, and graphical back forms the sketch map of back-etching window
Figure 10 adopts the sketch map of inductive couple plasma from back-etching to front silicon dioxide layer
Figure 11 is the principle prototype normalization open-circuit voltage that records of experiment and the relation of direction of vibration.
The specific embodiment
Further the present invention will be described below in conjunction with embodiment.
Micro two-dimensional vibrational energy collector based on the technology residual stress is as shown in Figure 1; It mainly comprises micro-cantilever 1, little mass 2, substrate 3 parts, and little mass 2 is positioned at the free end of micro-cantilever 1, and the other end of micro-cantilever 1 is fixed on the substrate 3; This collector adopts bulk silicon process to make; After accomplishing structure release, the intrinsic residual stress of micro fabrication will cause micro-cantilever 1 generation primary face to be out of shape outward, i.e. out-of-plane bending; Adopt micro fabrication to make the piezoelectric layer 4 of at least one or a plurality of electric isolation on the micro-cantilever surface, made bottom electrode 5 and top electrode 6 at the lower surface of each piezoelectric layer with upper surface respectively.
Can collector to micro-vibration shown in Figure 1, be parallel to micro-cantilever neutral axis in direction and belong under the acceleration effect on plane with distortion primary face outside, like direction perpendicular to the acceleration of substrate 1 (among the figure do
zDirection) and the direction acceleration that is parallel to substrate 1 and plane, micro-cantilever neutral axis place (among the figure do
xDirection); The inertia force that mass 2 receives all will produce moment of flexure in micro-cantilever 1; Make micro-cantilever 1 vibration, further cause the alternate of piezoelectric layer 4 stress of cantilever beam 1, because piezo-electric effect; To produce electrical potential difference between the upper and lower surfaces electrode 6 of piezoelectric layer 4 and the electrode 5, and utilize this electrical potential difference just can be electric.Belong to parallel plane ambient vibration ability for direction of vibration and micro-cantilever neutral axis, this micro-vibration can all can be gathered by collector expeditiously.
The micro two-dimensional vibrational energy collector that the present invention proposes can adopt silica-based micro fabrication to make, and is a typical technological process making this two-dimension vibration ability collector below:
1, the N type high resistant silicon chip of choosing twin polishing is as substrate 3, and about 500 m of thickness are through the SiO2 layer 7 of thermal oxide at the about 200-300nm of silicon chip surface growth, as shown in Figure 2.
2, adopt low-pressure chemical vapor phase deposition (LPCVD) prepared silicon nitride layer; The about 0.1-0.2 m of thickness; At the substrate face resist coating, positive photoetching for the first time, and carry out graphically through reactive ion etching (RIE) technology frontal silicon nitride layer; Form silicon nitride figure 8, as shown in Figure 3.
3, adopt LPCVD prepared polysilicon layer, about 2 m of thickness.For the adjusting process residual stress, so that producing suitable primary face, micro-cantilever is out of shape outward, and modes such as employing ion injection are injected phosphorus or boron ion in polysilicon layer, and the step of going forward side by side is carried out annealing in process.At the substrate face resist coating, positive photoetching for the second time, and carry out graphically through RIE technology frontal polysilicon layer, formation polysilicon graphics 9, as shown in Figure 4.
4, adopt LPCVD technology deposit silicon dioxide layer, about 0.2 m of thickness, as shown in Figure 5.
5, adopt the Ti/Pt layer of magnetron sputtering technique growth thickness 60nm/120nm in the silicon chip front; At the substrate face resist coating, the front is photoetching for the third time, and respectively Pt and Ti is carried out graphically through wet corrosion technique; Form lower surface electrode 5 figures, as shown in Figure 6.
6, adopt sol-gel technology or sputtering technology at the positive PZT piezoelectric layer of making thickness 1 ~ 2 m of silicon chip; At the substrate face resist coating, positive the 4th photoetching, and through wet corrosion technique the PZT layer is carried out graphically; Form PZT piezoelectric layer 4 figures, as shown in Figure 7.
7, adopt the Ti/Pt layer of magnetron sputtering technique growth thickness 60nm/120nm in the silicon chip front; At the substrate face resist coating, positive the 5th photoetching, and respectively Pt and Ti are carried out graphically through wet corrosion technique; Form upper surface electrode 6 figures, as shown in Figure 8.
8, adopt the Al layer of magnetron sputtering technique at the about 200nm of silicon chip back side growth thickness, at the substrate back resist coating, back side photoetching for the first time, and respectively Al and silica are carried out graphically through wet corrosion technique, formation corrosion window 10, as shown in Figure 9.
9, with Al be mask, adopt the inductive couple plasma etching from back-etching substrate 3, up to carving, shown in figure 10 to positive silicon dioxide layer 7.
10, further adopt reactive ion etching (RIE) technology to carve and pass through positive silicon dioxide layer 7 from the back side; Accomplish the release of vibrational energy collector structure; Because the influence of technology residual stress, micro-cantilever 1 will produce the distortion of primary face outside sweep, mass 2 also arrives outside the face thereupon.Between the upper surface electrode 6 of PZT piezoelectric layer 4 and lower surface electrode 5, apply voltage, PZT piezoelectric layer 4 is polarized, accomplish the making that two-dimension vibration can collector, as shown in Figure 1.
Piezoelectric layer based on the micro two-dimensional vibrational energy collector of technology residual stress not only can adopt the PZT material, also can adopt AlN or ZnO etc. as piezoelectric layer.
Ignore the edge effect influence; After accomplishing structure release; The micro-cantilever of band technology residual stress will become circle; The micro two-dimensional vibrational energy collector based on the technology residual stress that proposes for further checking the present invention can be gathered direction of vibration expeditiously and belong to parallel plane ambient vibration ability with the micro-cantilever neutral axis, has made one and has comprised and have the micro two-dimensional vibrational energy collector principle prototype that primary face is out of shape micro-cantilever outward, and its performance is detected.With a radius 108mm, height 19mm, it is two that the cylindrical shell of wall thickness 1mm is radially divided equally; Cylindrical shell is plastics; The one of which end is fixed in the making, and the other end is fixed a steel gauge block (length of mass is respectively 11mm, 6mm and 5mm), at the PVDF piezoelectric film of pasting long 38mm, wide 19mm near the free-ended upper surface of cylindrical shell; The thickness of pvdf membrane is 60 μ m; And all there is metal electrode on the upper and lower surface at PVDF, the upper and lower electrode of pvdf membrane is all drawn with lead, with its voltage of oscilloscope measurement.Above vibrational energy collector model machine is placed on the shake table, apply the simple harmonic quantity acceleration excitation of constant amplitude, the first natural frequency of the model machine that records and second order intrinsic frequency are respectively 8.7Hz and 27.7Hz.In order to measure the output performance of model machine under the acceleration excitation that is parallel to its neutral axis; Keep the amplitude of vibration table surface vibration acceleration constant; Change the angle (in changing the angle process, remain table top acceleration direction and be parallel to plane, place, cylindrical shell axis) of model machine and direction of vibration; At first natural frequency 8.7Hz and second order intrinsic frequency 27.7Hz place, measure the open circuit output voltage of pvdf membrane respectively.For the output performance of collector under the acceleration effect of different directions compared; Open-circuit voltage has been carried out the normalization processing with respect to its maximum; Obtained the normalization output voltage curve of different directions shown in figure 11; Relation curve that curve is first natural frequency place output voltage and direction of vibration wherein, another curve is the relation curve of second order intrinsic frequency place's output voltage and direction of vibration.Can know that by figure model machine is at the first natural frequency place, when stiff end and direction of vibration angle are between 112.5 to 157.5 degree time, model machine collection vibrational energy most effective; At second order intrinsic frequency place, when stiff end and direction of vibration angle are 22.5 when spending between 45 degree, model machine gather ambient vibration can most effective.This shows; Near first natural frequency and second order intrinsic frequency; It is different that this collector is gathered the highest direction of ambient vibration energy efficiency, as long as frequency match utilizes this collector can realize the highly effective gathering to the vibrational energy that is parallel to cantilever beam neutral axis plane any direction.
More than experiment shows; The bright proposition of we can belong to parallel plane ambient vibration ability with the micro-cantilever neutral axis by the highly effective gathering direction of vibration based on the micro two-dimensional vibrational energy collector of technology residual stress; Simple in structure, be convenient to make, have broad prospect of application in fields such as wireless sensing, portable type electronic product, medical science implant systems.
Claims (1)
1. based on the micro two-dimensional vibrational energy collector of technology residual stress, it comprises substrate and micro-cantilever and the little mass made by micro fabrication, it is characterized in that:
Said little mass is positioned at the free end of micro-cantilever, and the other end of micro-cantilever is fixed on the substrate; The piezoelectric layer that said micro-cantilever surface has one or more electric isolation at least, all there is electrode on the upper and lower surface of each piezoelectric layer;
Said micro-cantilever has the primary face outside sweep distortion that causes owing to the bulk silicon process residual stress;
Said collector is under the acceleration effect on the plane, neutral axis place that is parallel to said micro-cantilever with primary face outside sweep distortion; The inertia force that mass receives all will produce moment of flexure in micro-cantilever; Cause the micro-cantilever vibration, further cause the alternate of each piezoelectric layer stress on the micro-cantilever, because piezo-electric effect; To produce electrical potential difference between the upper and lower surface electrode of each piezoelectric layer, and utilize this electrical potential difference just can be electric; Therefore belong to parallel plane ambient vibration ability for direction of vibration and micro-cantilever neutral axis, said collector all can be realized gathering expeditiously.
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| CN105186922A (en) * | 2015-10-27 | 2015-12-23 | 南昌工程学院 | Piezoelectric-triboelectric combined MEMS wideband-energy harvester and preparation method thereof |
| CN107947635A (en) * | 2017-12-18 | 2018-04-20 | 南京邮电大学 | High-performance circular arc type piezoelectric type energy collector |
| CN111830295A (en) * | 2019-04-18 | 2020-10-27 | 云谷（固安）科技有限公司 | Device for testing electric performance of micro-element |
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| CN107947635A (en) * | 2017-12-18 | 2018-04-20 | 南京邮电大学 | High-performance circular arc type piezoelectric type energy collector |
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Application publication date: 20120808 |