CN102624344A - Power amplifier - Google Patents

Power amplifier Download PDF

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Publication number
CN102624344A
CN102624344A CN2012100834362A CN201210083436A CN102624344A CN 102624344 A CN102624344 A CN 102624344A CN 2012100834362 A CN2012100834362 A CN 2012100834362A CN 201210083436 A CN201210083436 A CN 201210083436A CN 102624344 A CN102624344 A CN 102624344A
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China
Prior art keywords
resistance
power
amplifier
diode
electric capacity
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Pending
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CN2012100834362A
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Chinese (zh)
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施钟鸣
马骥
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WUXI SICOMM COMMUNICATION TECHNOLOGY Co Ltd
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WUXI SICOMM COMMUNICATION TECHNOLOGY Co Ltd
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Priority to CN2012100834362A priority Critical patent/CN102624344A/en
Publication of CN102624344A publication Critical patent/CN102624344A/en
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Abstract

The invention discloses a power amplifier comprising a power amplification module, a power control module and a power detection module. As the power amplifier disclosed by the invention is additionally provided with the power detection module and the power control module to form a feedback control loop, output power is stabilized and limited by negative feedback control on the amplifier; in addition, with adoption of the technical scheme of the power amplifier, if the output power is limited automatically, the limited power does not change with frequency in radio frequency application. Therefore, the power amplifier with protection greatly improves frequency flatness of a system.

Description

A kind of power amplifier device
Technical field
The present invention relates to a kind of power amplifier device with power output control and defencive function.
Background technology
Power amplifier device is used for the power of input signal is amplified, and power amplifier device is widely used at electronics and communication field.Fig. 1 is a kind of circuit theory diagrams of power amplifier device of prior art, and is as shown in the figure, and this power amplifier device PA has output Pout, power end Vdd, earth terminal and gain control end Vc.Through power end Vdd power supply, power gain is by the control voltage control of gain control end Vc by power supply for amplifier PA.,, exports amplifier PA after amplifying from the signal of input Pin input through output Pout.
In power amplifier PA when work,, the power output Pout of power amplifier, gain or power increase and increase with control voltage Vc's.Because the raising of the increase of input power Pin, the variation of device temperature, supply voltage or control voltage, power output also can raise.But power amplifier can power output Pout be conditional, and too high power output can cause power amplifier to damage.
In addition, the variation of temperature and voltage also can make power amplifier output power change, even for same power amplifier, in the radio frequency applications under same temperature, same voltage, power output also can change with frequency.
This prior art power amplifier does not have any control circuit and protective circuit, therefore under the unsettled situation of power output, has the possibility of burning.For this reason, be necessary to design a kind of novel power amplifier device, to solve the problem that prior art exists with power protecting circuit.
Summary of the invention
To the defective of prior art, the purpose of this invention is to provide a kind of power amplifier device that can more stablize, control power output safely.
Power amplifier device provided by the invention comprises power amplifier module, power control module and power detection module, and wherein: power amplifier module comprises amplifier, and said amplifier comprises power end, earth terminal, output, input and gain control end; Power control module comprises first resistance, triode, second resistance and the 3rd resistance, and first end of first resistance is connected with the base stage of triode; The collector electrode of triode is connected with the Amplifier Gain control end; The grounded emitter of triode; First end of second resistance is connected with the base stage of triode; The second end ground connection of second resistance; Power detection module comprises first electric capacity, first diode, second diode, second electric capacity, and first end of first electric capacity is connected with the outlet side of amplifier; Second end of first electric capacity is connected with the positive pole of the negative pole of first diode, second diode; The plus earth of first diode; The negative pole of second diode is connected with first end of second electric capacity; The second end ground connection of second electric capacity; First end of second electric capacity also with power control module in second end of first resistance be connected.
Preferably, power amplifier module also comprises the 4th resistance, and first end of said the 4th resistance is connected with the Amplifier Gain control end, and second end of the 4th resistance is used for being connected with biasing circuit.
Preferably, power control module comprises the 3rd resistance, and the emitter of triode is connected with first end of the 3rd resistance; The second end ground connection of the 3rd resistance.
Preferably, second resistance is adjustable resistor or variable resistance.
Preferably, triode is a NPN transistor.
Preferably, said amplifier is a multistage amplifier circuit.
The present invention also provides a kind of power amplifier device; Said device comprises power amplifier module, power control module and power detection module; Wherein: power amplifier module comprises amplifier, and said amplifier comprises power end, earth terminal, output, input and gain control end; Power control module comprises first resistance, FET, second resistance and the 3rd resistance, and first end of first resistance is connected with the grid of FET; The drain electrode of FET is connected with the Amplifier Gain control end; The source ground of FET; First end of second resistance is connected with the grid of FET; The second end ground connection of second resistance; Power detection module comprises first electric capacity, first diode, second diode, second electric capacity, and first end of first electric capacity is connected with the outlet side of amplifier; Second end of first electric capacity is connected with the positive pole of the negative pole of first diode, second diode; The plus earth of first diode; The negative pole of second diode is connected with first end of second electric capacity; The second end ground connection of second electric capacity; First end of second electric capacity also with power control module in second end of first resistance be connected.
Preferably, power amplifier module also comprises the 4th resistance, and first end of said the 4th resistance is connected with the Amplifier Gain control end, and second end of the 4th resistance is used for being connected with biasing circuit.
Preferably, power control module comprises the 3rd resistance, and the source electrode of FET is connected with first end of the 3rd resistance; The second end ground connection of the 3rd resistance.
Preferably, second resistance is adjustable resistor or variable resistance.
With respect to prior art, owing to increased power detection module and power control module in the power amplifier device of the present invention, constituted feedback control loop, therefore can realize stable and restriction through the negative feedback control of pair amplifier to power output.
And, adopt technical scheme of the present invention, in case power output has obtained restriction automatically, in radio frequency applications, the power of restriction will not become with frequency, therefore, the power amplifier device of this band protection of the present invention has improved the frequency evenness of system greatly.
Description of drawings
Fig. 1 is a kind of circuit theory diagrams of existing power amplifier device;
Fig. 2 is the circuit theory diagrams of the power amplifier device of a kind of preferred implementation of the present invention.
Embodiment
As shown in Figure 2, the power amplifier device of a kind of preferred implementation of the present invention comprises power amplifier module 110, power detection module 120 and power control module 130.Wherein, utilize power detection module 120 and power control module 130 to constitute feedback control loops, so this is that a kind of to collect power amplification, power detection, power control protection be the power amplifier device of one.The concrete introduction as follows:
Power amplifier module 110 comprises amplifier PA, and said amplifier PA comprises output Pout, input Pin, power end and earth terminal (not shown) and gain control end Vc.Preferably, power amplifier module can also comprise the 4th resistance R 4, and first end of said the 4th resistance R 4 is connected with the Amplifier Gain control end, and second end of the 4th resistance is used for being connected with biasing circuit.Biasing circuit is used to the Amplifier Gain control end control voltage is provided.For amplifier PA control voltage Vc is provided through the 4th resistance R 4.Amplifier PA can adopt various suitable amplifying circuits, and amplifier PA is made up of one-level amplifying circuit at least, preferably, is to obtain higher power gain, and amplifier PA is a multistage amplifier circuit.Input signal flows into from the input Pin of amplifier PA, and according to the control voltage of gain control end Vc, signal is after being enlarged into prearranged multiple, and Pout spreads out of through output.Wherein, the power gain of amplifier PA becomes the monotonic increase proportionate relationship with control voltage Vc, that is, Vc is high more for control voltage, and the power gain of amplifier PA is high more.
Power detection module 120 comprises that first end of first capacitor C 1, the first diode D1, the second diode D2, second capacitor C, 2, the first capacitor C 1 is connected with the outlet side of amplifier PA.The outlet side of amplifier not only can be the output of amplifier, can also be the output of the latter linked match circuit of amplifier, filter, transmit-receive switch, antenna.Second end of first capacitor C 1 is connected with the positive pole of the negative pole of the first diode D1, the second diode D2; The plus earth of the first diode D1; The negative pole of the second diode D2 is connected with first end of second capacitor C 2; The second end ground connection of second capacitor C 2; First end of second capacitor C 2 also with power control module in second end of first resistance R 1 be connected.The effect of first capacitor C 1 is that the signal with output is coupled to power detection module, that is, first capacitor C 1 is coupled the output AC signal of power amplifier device to the first diode D1 and the second diode D2.As shown in the figure, the connected mode of the first diode D1 and the second diode D2 has constituted rectification circuit, and the first diode D1 and the second diode D2 are rectified into direct voltage Vd with AC signal.Second capacitor C 2 is a filter capacitor, is used for commutating voltage Vd is carried out filtering, so that voltage is more stable.Those skilled in the art can know that direct voltage Vd becomes dull proportionate relationship with the power output of amplifier PA, and promptly power output is big more, and direct voltage Vd is high more.
Power control module 130 comprises that first end of first resistance R 1, triode Q1, second resistance R, 2, the first resistance R 1 is connected with the base stage of triode Q1; The collector electrode of triode Q1 is connected with the gain control end of amplifier PA; The grounded emitter of triode Q1.First end of second resistance R 2 is connected with the base stage of triode Q1; The second end ground connection of second resistance.In said power control module 130, the base stage of triode Q1 is as the signal input part of power control module 130, and the collector electrode of triode Q1 then acts on the gain control end of amplifier PA as the signal output part of power control module 130.
The emitter of triode Q1 is ground connection directly, but more preferably, power control module comprises the 3rd resistance R 3, and the emitter of triode Q1 is connected with first end of the 3rd resistance R 3; The second end ground connection of the 3rd resistance R 3, the 3rd resistance R 3 flows through the electric current of transistor collector and emitter as current-limiting resistance with restriction, thereby plays the effect of protection triode.First resistance R 1 and second resistance R 2 are carried out dividing potential drop with direct voltage Vd, and voltage after partial is applied to the base stage two ends of triode Q1.When power output increases, when causing the base voltage Vb of triode Q1 to surpass the Q1 cut-in voltage, triode Q1 conducting, thus the control voltage that amplifier PA is obtained descends.The power output of amplifier PA also descends thereupon, and direct voltage Vd also will descend, thereby realize the automatic control of the power output of pair amplifier PA.Preferably, said triode Q1 is a NPN transistor, transistorized various parameters, and for example characteristic frequency, operating voltage/electric current, current amplification factor, reverse breakdown voltage or the like all can calculate according to concrete application and confirm.Each resistance can adopt various suitable resistance, for example fixed carbon resister, metalfilmresistor etc.
In the power amplifier device course of work of the present invention; Power detection module 120 is obtained the output signal from the output of power amplifier module 110; After over commutation, Filtering Processing, the signal after handling is sent to the input of power control module 130, after 130 pairs of said signals of power control module are handled; Produce the reverse control signal that acts on the gain control end of amplifier PA in the power amplifier module 110, thereby realized the negative feedback control of pair amplifier PA.
In another kind of embodiment, can double pole triode Q1 be replaced with metal-oxide semiconductor (MOS) (MOS) triode, i.e. field effect pipe.Particularly, said FET can be N type FET.That is: power control module 130 comprises that first end of first resistance R 1, FET, second resistance R, 2, the first resistance R 1 is connected with the grid of FET; The drain electrode of FET is connected with the gain control end of amplifier PA; The source ground of FET.First end of second resistance R 2 is connected with the grid of FET; The second end ground connection of second resistance.The source electrode of FET is ground connection directly, but more preferably, the source electrode of FET has passed through the 3rd resistance R 3 ground connection of metering function, that is: power control module comprises the 3rd resistance R 3, and the source electrode of FET is connected with first end of the 3rd resistance R 3; The second end ground connection of the 3rd resistance R 3.
In sum, power detection module 120 has constituted the negative feedback control loop with power control module 130, and such negative feedback loop makes the output of amplifier PA obtain stable and protection.Reasonably adjust and change first resistance R 1, the output of amplifier PA is stabilized on the power of expectation.Control first resistance R 1 through control or switch, can control and change the power output of amplifier PA.Preferably, increase by the 3rd resistance R 3, can make negative feedback loop more stable, easier controlled.The 3rd resistance R 3 and above mentioned the 4th resistance R 4 all can be used as current-limiting resistance.
Preferably, in order to make the circuit parameter adjusting of whole power amplifier device more convenient, second resistance R 2 can be adjustable resistor or variable resistance.The change in resistance scope of adjustable resistor or variable resistance can be according to specifically being applied in design.In the process of producing power amplifier device of the present invention, except that second resistance R 2, all devices all can be integrated in the chip.The second external resistance R 2 can let the user come setpoint power output neatly according to concrete application requirements; Promptly; Only add an external earth resistance and control power output with a pin; This is not only very efficient, and use easy, for the large tracts of land widespread usage of chip or module, promote great facility is provided.Because second resistance is variable or controlled, the power of exporting like this with regard to controlled maybe can be by the predetermined value setting.
Power amplifier device with power protection provided by the invention comprises power amplifier module, power control module and three modules of power detection module.The specific product way of realization of power amplifier device of the present invention can be a discrete device, also can be the integrated back of wherein any two modules and the combination of discrete device, the element of can also be integrated three modules and external second resistance.
Above-mentioned execution mode only supplies to explain the present invention's usefulness; And be not to be limitation of the present invention; The those of ordinary skill in relevant technologies field without departing from the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also should belong to category of the present invention, and scope of patent protection of the present invention should be limited each claim.

Claims (10)

1. a power amplifier device is characterized in that, said device comprises power amplifier module, power control module and power detection module, wherein:
Power amplifier module comprises amplifier, and said amplifier comprises power end, earth terminal, output, input and gain control end;
Power control module comprises first resistance, triode, second resistance and the 3rd resistance, and first end of first resistance is connected with the base stage of triode; The collector electrode of triode is connected with the Amplifier Gain control end; The grounded emitter of triode; First end of second resistance is connected with the base stage of triode; The second end ground connection of second resistance;
Power detection module comprises first electric capacity, first diode, second diode, second electric capacity.First end of first electric capacity is connected with the outlet side of amplifier; Second end of first electric capacity is connected with the positive pole of the negative pole of first diode, second diode; The plus earth of first diode; The negative pole of second diode is connected with first end of second electric capacity; The second end ground connection of second electric capacity; First end of second electric capacity also with power control module in second end of first resistance be connected.
2. power amplifier device according to claim 1 is characterized in that power amplifier module also comprises the 4th resistance, and first end of said the 4th resistance is connected with the Amplifier Gain control end, and second end of the 4th resistance is used for being connected with biasing circuit.
3. power amplifier device according to claim 1 and 2 is characterized in that power control module comprises the 3rd resistance, and the emitter of triode is connected with first end of the 3rd resistance; The second end ground connection of the 3rd resistance.
4. power amplifier device according to claim 1 is characterized in that, second resistance is adjustable resistor or variable resistance.
5. power amplifier device according to claim 1 is characterized in that, triode is a NPN transistor.
6. power amplifier device according to claim 1 is characterized in that, said amplifier is single-stage amplifying circuit or multistage amplifier circuit.
7. a power amplifier device is characterized in that, said device comprises power amplifier module, power control module and power detection module, wherein:
Power amplifier module comprises amplifier, and said amplifier comprises power end, earth terminal, output, input and gain control end;
Power control module comprises first resistance, FET, second resistance and the 3rd resistance, and first end of first resistance is connected with the grid of FET; The drain electrode of FET is connected with the Amplifier Gain control end; The source ground of FET; First end of second resistance is connected with the grid of FET; The second end ground connection of second resistance;
Power detection module comprises first electric capacity, first diode, second diode, second electric capacity, and first end of first electric capacity is connected with the outlet side of amplifier; Second end of first electric capacity is connected with the positive pole of the negative pole of first diode, second diode; The plus earth of first diode; The negative pole of second diode is connected with first end of second electric capacity; The second end ground connection of second electric capacity; First end of second electric capacity also with power control module in second end of first resistance be connected.
8. device according to claim 7 is characterized in that power amplifier module also comprises the 4th resistance, and first end of said the 4th resistance is connected with the Amplifier Gain control end, and second end of the 4th resistance is used for being connected with power supply or biasing circuit.
9. according to claim 7 or 8 described power amplifier devices, it is characterized in that power control module comprises the 3rd resistance, the source electrode of FET is connected with first end of the 3rd resistance; The second end ground connection of the 3rd resistance.
10. according to claim 7 is device, it is characterized in that, second resistance is adjustable resistor or variable resistance.
CN2012100834362A 2012-03-22 2012-03-22 Power amplifier Pending CN102624344A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103104380A (en) * 2013-02-22 2013-05-15 李海鹏 Oil-saving emission reduction device
CN105717354A (en) * 2016-01-28 2016-06-29 宜确半导体（苏州）有限公司 Power detection circuit and method
CN106788285A (en) * 2015-11-20 2017-05-31 厦门宇臻集成电路科技有限公司 A kind of power amplifier current feedback bias circuit
CN106877826A (en) * 2015-12-10 2017-06-20 美国亚德诺半导体公司 The power intensifier and method of the automatic biasing distributed amplifier of gate bias network
CN107395144A (en) * 2017-07-05 2017-11-24 唯捷创芯(天津)电子技术股份有限公司 Radio-frequency power amplifier, chip and communication terminal based on power detection feedback
CN107404296A (en) * 2017-07-05 2017-11-28 唯捷创芯(天津)电子技术股份有限公司 Radio-frequency power amplifier, chip and communication terminal based on current detection feedback
CN110784181A (en) * 2019-09-03 2020-02-11 海能达通信股份有限公司 Method for improving dynamic range of power, power amplifier and transmitter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711514A (en) * 1980-06-24 1982-01-21 Olympus Optical Co Ltd Automatic level controller
CN101904088A (en) * 2007-12-18 2010-12-01 高通股份有限公司 Amplifier with dynamic bias
CN102045029A (en) * 2009-10-19 2011-05-04 无锡华润上华半导体有限公司 Operation amplifying circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711514A (en) * 1980-06-24 1982-01-21 Olympus Optical Co Ltd Automatic level controller
CN101904088A (en) * 2007-12-18 2010-12-01 高通股份有限公司 Amplifier with dynamic bias
CN102045029A (en) * 2009-10-19 2011-05-04 无锡华润上华半导体有限公司 Operation amplifying circuit

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103104380A (en) * 2013-02-22 2013-05-15 李海鹏 Oil-saving emission reduction device
CN106788285A (en) * 2015-11-20 2017-05-31 厦门宇臻集成电路科技有限公司 A kind of power amplifier current feedback bias circuit
CN106877826A (en) * 2015-12-10 2017-06-20 美国亚德诺半导体公司 The power intensifier and method of the automatic biasing distributed amplifier of gate bias network
CN105717354A (en) * 2016-01-28 2016-06-29 宜确半导体（苏州）有限公司 Power detection circuit and method
CN107395144A (en) * 2017-07-05 2017-11-24 唯捷创芯(天津)电子技术股份有限公司 Radio-frequency power amplifier, chip and communication terminal based on power detection feedback
CN107404296A (en) * 2017-07-05 2017-11-28 唯捷创芯(天津)电子技术股份有限公司 Radio-frequency power amplifier, chip and communication terminal based on current detection feedback
CN107404296B (en) * 2017-07-05 2020-03-06 唯捷创芯(天津)电子技术股份有限公司 Radio frequency power amplifier, chip and communication terminal based on current detection feedback
US11177781B2 (en) 2017-07-05 2021-11-16 Vanchip (Tianjin) Technology Co., Ltd. Radio frequency power amplifier based on current detection feedback, chip and communication terminal
US11323074B2 (en) 2017-07-05 2022-05-03 Vanchip (Tianjin) Technology Co., Ltd. Radio frequency power amplifier based on power detection feedback, chip and communication terminal
CN110784181A (en) * 2019-09-03 2020-02-11 海能达通信股份有限公司 Method for improving dynamic range of power, power amplifier and transmitter
CN110784181B (en) * 2019-09-03 2023-12-12 海能达通信股份有限公司 Method for improving dynamic range of power, power amplifier and transmitter

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Application publication date: 20120801