CN102623594A - 发光器件 - Google Patents
发光器件 Download PDFInfo
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- CN102623594A CN102623594A CN2012100214444A CN201210021444A CN102623594A CN 102623594 A CN102623594 A CN 102623594A CN 2012100214444 A CN2012100214444 A CN 2012100214444A CN 201210021444 A CN201210021444 A CN 201210021444A CN 102623594 A CN102623594 A CN 102623594A
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- layer
- luminescent device
- conductive semiconductor
- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003068 static effect Effects 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 230000012010 growth Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000026267 regulation of growth Effects 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920012310 Polyamide 9T (PA9T) Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- -1 carbide Chemical compound 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L33/0004—Devices characterised by their operation
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- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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Abstract
本发明公开了一种发光器件,包括:基板;第一导电半导体层,布置在所述基板上;有源层,布置在所述第一导电半导体层上;以及第二导电半导体层,布置在所述有源层上,其中所述第一导电半导体层包括在上表面处设置有凹口的第一层、布置在所述第一层上的第二层、以及布置在所述第二层上的第三层,其中所述第一导电半导体层还包括位于所述第一层与所述第二层之间的阻挡层,并且所述阻挡层沿所述凹口布置。该发光器件能够降低通过位错引起的漏电流并提高对静电的耐抗性。
Description
相关申请的交叉引用
本申请要求享有在2012年1月26日向韩国知识产权局递交的韩国专利申请第10-2011-0007926号的优先权,在此通过参考引入该申请的内容。
技术领域
本发明的实施例涉及一种发光器件。
背景技术
发光器件(LED)为这样一种器件,其使用化合物半导体的特性将电信号转换成红外线、紫外线或光。LED现在被应用于例如为家用电器、远程控制、电子招牌、显示器、各种自动器具等的器件,并且其应用范围持续扩大。
一般而言,小型化LED被制作成表面安装器件,从而其能够被直接安装到印刷线路板(PCB)基板上。因此,被用作显示器件的LED灯也被开发为表面安装器件。这种表面安装器件可取代传统灯,并且被用作照明显示器、字符显示器、图像显示器等,呈现(render)各种颜色。
同时,在发光器件中,由于基板和半导体层之间的重大晶格失配,从而在半导体层上产生重大晶体缺陷,例如位错(dislocation)。当有外部静电施加时,这种晶体缺陷增加了发光器件的漏电流,并且发光器件的有源层可能会被强电场损坏。因此,为了将发光器件应用于照明器件,需要对静电放电(ESD)有预定水平或更高水平的耐抗性(resistance)。
发明内容
因此,考虑到上述问题而提出本发明的实施例,并且本发明实施例的一个目的是提供一种对静电放电(ESD)具有耐抗性的发光器件。
根据一个方案,提供了一种发光器件,包括:基板;第一导电半导体层,布置在所述基板上;有源层,布置在所述第一导电半导体层上;以及第二导电半导体层,布置在所述有源层上,其中所述第一导电半导体层包括在上表面处设置有凹口的第一层、布置在所述第一层上的第二层、以及布置在所述第二层上的第三层,其中所述第一导电半导体层还包括位于所述第一层和所述第二层之间的阻挡层,并且所述阻挡层沿所述凹口布置。
此外,所述第一导电半导体层可包括位于设置有凹口的第一层与第二层之间的阻挡层。
根据另一个方案,提供了一种发光器件,包括:基板;第一导电半导体层,布置在所述基板上;有源层,布置在所述第一导电半导体层上;以及第二导电半导体层,布置在所述有源层上;其中所述第一导电半导体层包括含有多个岛状物的第一层、布置在所述第一层上的第二层、以及布置在所述第二层上的第三层。
另外,本发明还提供包括上述发光器件的发光器件封装、照明器件和背光单元。
利用本发明的发光器件,能够降低通过位错引起的漏电流并提高对静电的耐抗性。
附图说明
当结合附图时,从下面的详细描述中,将更清楚地理解本发明实施例的上述和其它目的、特征以及其它优点,其中:
图1为示出根据一实施例的发光器件的剖视图;
图2为示出根据一实施例的发光器件的剖视图;
图3为示出根据另一实施例的发光器件的剖视图;
图4为示出根据另一实施例的发光器件封装的剖视图;
图5为示出根据一实施例的包括发光器件的照明器件的透视图;
图6为示出沿图5的照明器件的线C-C’的剖面的截面图;
图7为示出根据一实施例的包括发光器件的液晶显示器的分解透视图;以及
图8为示出根据一实施例的包括发光器件的液晶显示器的分解透视图。
具体实施方式
现将对优选实施例进行详细参考,其实例示出于附图中。
当结合附图时,从如下实施例中将清楚地理解实施例的优点和特征以及用于处理实施例的方法。然而,实施例不限于这些实施例并且可以以其它各种方式实现。实施例的提供仅是为了更完整地示出实施例并且为了容许本领域普通技术人员完整地理解实施例的范围。仅通过权利要求来限定实施例的范围。因此,在某些实施例中,公知工艺、公知器件结构以及公知技术没有详细示出,以避免对实施例的不清楚的解释。说明书通篇中将使用相同附图标记以指代相同或类似的部分。
空间相关的术语“下方”、“之下”、“下面”、“上方”、“上面”等可用于示出一个器件或构成元件与其他器件或构成元件之间的关系,如附图所示。应理解,空间相关的术语包括在附图中示出的方向以及在使用或操作期间器件的其他方向。例如,在附图中示出的器件反转的情况下,布置在其他器件“下方”或“之下”的器件可布置在其他器件“上方”。因此,示例性术语“之下”可包括“下方”或“之下”以及“上方”。器件可在其它方向上布置。结果是,空间相关的术语可依据方位来解释。
图1为示出根据一实施例的发光器件的剖视图。图2为图1的发光器件的剖视图。
参见图1和图2,发光器件100包括基板110、布置在基板110上方的第一导电半导体层120、布置在第一导电半导体层120上方的有源层130以及布置在有源层130上方的第二半导体层140,第一导电半导体层120可包括第一层121、第二层123以及第三层125。
基板110可由透光材料(例如蓝宝石(Al2O3)、GaN、ZnO以及AlO)制成,而不限于此。此外,基板110可为导热率比蓝宝石Al2O3基板更高的SiC基板。
缓冲层(未示出)可布置在基板110上,以降低基板110与第一半导体层120之间的晶格失配。缓冲层(未示出)可以在基板110上以单晶的形式生长,并且,以单晶形式生长的缓冲层提高了在缓冲层(未示出)上生长的第一半导体层120的结晶性。
缓冲层(未示出)可择自具有InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的化学式的半导体材料,例如GaN、InN、AlN、AlInN、InGaN、AlGaN以及InAlGaN。
第一半导体层120实现为n型半导体层,并将电子供应到有源层140。第一导电半导体层120可择自具有InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的化学式的半导体材料,例如GaN、AlN、AlGaN、InGaN、InN、InAlGaN以及AlInN,并且可掺杂有例如为Si、Ge、Sn的n型掺杂物。
同时,第一导电层120可包括第一层121、第二层123以及第三层125,并且第一层121可在其顶部处设置有凹口(notch)122。
第一层121可掺杂有n型掺杂物,并且可通过控制当第一层121生长时的温度来形成凹口122。即,当第一层121在550到940℃的温度、100到500Torr的压力下生长时,凹口122可被施予(impart)到第一层121的顶部。
同时,第一导电半导体层120生长自具有InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的化学式的半导体材料,如图1所示,凹口122可具有由两个倾斜平面(即,第一倾斜平面(1,-1,0,2)和第二倾斜平面(-1,1,0,2))所形成的三角形剖面形状,其剖面连接到第一层121的生长平面(0,0,0,1)并可具有六边形平面形状。即,凹口122可具有楔形或六棱锥形。
这样的凹口122选择性地形成在形成有位错190的区域中,并且凹口122可增加形成有位错190的区域的阻抗,这是由于角点(angular point)的阻抗(R2)高于第一层121中的生长平面(0,0,0,1)的阻抗(R1)。因此,当有静电施加时,通过位错190聚集的电流被阻挡并且通过位错190引起的漏电流减少。发光器件100的ESD耐抗性可增加。此时,电流可通过具有低阻抗和优良结晶性的第一层121的生长平面(0,0,0,1)移动。
第二层123可为未掺杂有杂质的未掺杂层,并且例如在约1070℃的温度和约200Torr的压力下布置到的厚度。第二层123在比第一层121的生长温度高的温度下生长,因而填充凹口122并具有顶部平坦的表面。因此,能够形成布置在第二层123上的第三层125,该第三层125掺杂有杂质并具有优良结晶性。
此外,第二层123可包括硅层。可存在多个硅层。当硅层存在时,第二层123的阻抗可降低,因而发光器件100的效率可提高。
有源层130为电子与空穴重新组合并通过电子和空穴的重新组合而转移到低能级的区域,其产生波长与能级的改变相对应的光。
有源层130例如由具有InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的化学式的半导体材料制成,并可具有单量子阱或多量子阱(MQW)。因此,更多电子聚集到量子阱层的低能级。结果是,电子和空穴重新组合的可能性增加并且因而可提高发光效率。此外,有源层130可包括量子线结构或量子点结构。
第二导电半导体层140可通过掺杂p型掺杂物(例如Mg、Zn、Ca、Sr或Ba)被实现为p型半导体层,并且可将空穴注入到有源层130。第二导电半导体140例如由具有InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的化学式的半导体材料制成,择自GaN、AlN、AlGaN、InGaN、InN、InAlGaN、AlInN等。
同时,中间层(未示出)可布置在有源层130和第二导电半导体层140之间并可为电子阻挡层,其当施加高电流时防止从第一导电半导体层120传输到有源层130的电子没有在有源层130中重新组合而是注入到第二导电半导体层140中的现象。
中间层具有比有源层130大的带隙,从而防止从第一导电半导体层120注入的电子没有在有源层130中重新组合而是注入到第二导电半导体层140中的现象。结果是,在有源层130中电子和空穴之间重新组合的可能性增加,因而能够防止漏电流。
同时,中间层可具有比有源层130中所包含的势垒层更大的带隙,并且可为包含Al的p型半导体层,例如为AlGaN,并且中间层的类型不限于此。
第一导电半导体层120、有源层130以及第二导电半导体层140可通过例如为金属有机化学气相沉积(MOCVD)、化学气相沉积(CVD)、等离子体增强型化学气相沉积(PECVD)、分子束外延(MBE)、氢化物气相外延(HVPE)等的方法形成,并且方法不限于此。
此外,包括n型或p型半导体层的第三导电半导体层(未示出)可布置在第二导电半导体层140上,结果是发光器件100可具有np、pn、npn以及pnp结的至少其中之一。
此外,掺杂到第一导电半导体层120和第二导电半导体层140中的导电掺杂物的浓度可均匀或不均匀。即,多个半导体层的结构可多样化,并且不受限。
有源层130和第二导电半导体层140被部分去除,以暴露部分第一导电半导体层120,并且由钛(Ti)等制成的第一电极160可布置在暴露的第一导电半导体层120的上表面上。
此外,透光(light-transmitting)电极层150布置在第二导电半导体层140上,并且由镍(Ni)等制成的第二电极152可布置在透光电极层150的一个外部表面上。
透光电极层150可由ITO、IZO(In-ZnO)、GZO(Ga-ZnO)、AZO(Al-ZnO)、AGZO(Al-Ga ZnO)、IGZO(In-Ga ZnO)、IrOx、RuOx、RuOx/ITO、Ni/IrOx/Au以及Ni/IrOx/Au/ITO的至少之一制成,并且布置在第二导电半导体层140的整个外表面上方,从而防止电流积聚(crowding)。
参见图2,根据一个实施例的发光器件200包括基板210、布置在基板210上的第一导电半导体层220、布置在第一导电半导体层220上的有源层230以及布置在有源层230上的第二半导体层240,并且第一导电半导体层220可包括设置有凹口222的第一层221、第二层223以及第三层225。
此外,部分第一导电半导体层220被暴露,第一电极260布置在暴露部分中,并且透光电极层250和第二电极252可布置在第二导电半导体层240上。
参见图2,根据该实施例的发光器件200可包括***在包括凹口222的第一层221和第二层223之间的阻挡层227。
阻挡层227可包括AlGaN c1和GaN c2的至少其中之一。
此外,阻挡层227可为AlGaN/GaN超晶格层。当阻挡层227具有超晶格层结构时,其防止位错290传递到有源层230,从而提高有源层230的结晶性,因而提高发光器件200的发光效率。
图3为根据另一实施例的发光器件的剖视图。
参见图3,根据本实施例的发光器件300包括基板310、布置在基板310上方的第一导电半导体层320、布置在第一导电半导体层320上方的有源层330以及布置在有源层330上方的第二导电半导体层340。部分第一导电半导体层320被暴露,第一电极360布置在暴露部分中,并且透光电极层350和第二电极352布置在第二导电半导体层340上。
基板310、第一导电半导体层320、有源层330、第二导电半导体层340、第一电极360、透光电极层350以及第二电极352与图1中所述相同,因而省略对其的详细描述。
参见图3,第一层321可在其表面上设置有多个岛状物(island)322。岛状物322可包含MgN、SiN以及ZnN之一。
例如,当第一导电半导体层320由GaN制成并且岛状物322由MgN制成时,能够通过停止供应Ga(TMGa)源、而供应Mg(CP2Mg)源连同NH3来执行岛状物322的形成。能够在900到1050℃的温度和100到500Torr的压力下形成岛状物322,并且所形成的岛状物322可布置在第一层321的位置处。
当在形成岛状物322之后立即生长第一层321时,由于在岛状物322上不具有籽晶,从而不生长高温第一层321,而是在相邻岛状物322之间生长第一层321。
即,第一层321在多个岛状物322中的两个相邻岛状物322之间延伸,并且当从平面来看时,岛状物322环绕第一层321。
同时,当生长第一层321时,以具有倾斜平面的柱状形式生长第一层321,并且位错390移动到第一层321的倾斜平面,由于位错的减少从而第一层321的生长平面(0,0,0,1)具有高质量的结晶性,因而具有降低的阻抗。
因此,当有静电施加时,通过位错390聚集的电流被阻挡,因而能够提高发光器件300的ESD耐抗性。此时,电流可通过具有低阻抗和优良结晶性的第一层321的生长平面(0,0,0,1)进行移动。
第二层323可为未掺杂有杂质的未掺杂层,并且具有顶部平坦的表面。
因此,第二层323可布置在第二层323上,并且能够形成掺杂有杂质并具有优良结晶性的第三层325。
此外,第二层323包括硅层,因而降低了第二层323的阻抗并且提高了发光器件300的效率。
图4为示出根据另一实施例的发光器件封装的剖视图。
参见图4,发光器件封装400可包括形成腔的主体410、安装在主体410上的第一电极层431和第二电极层432、电连接到第一电极层431的发光器件420以及填充第二电极层432的密封剂440。
主体410可由择自例如为聚邻苯二甲酰胺(PPA)的树脂、硅(Si)、铝(Al)、氮化铝(AlN)、氧化铝(AlOx)、感光玻璃(PSG)、聚酰胺9T(PA9T)、间规聚苯乙烯(SPS)、金属、蓝宝石(Al2O3)、氧化铍(BeO)、陶瓷以及印刷线路板(PCB)的至少之一制成。
此外,主体410包括底部和壁部以形成腔,并且底部和壁部可通过喷射模塑、蚀刻等而一体化形成,但是形成方法不限于此。壁部的内表面可设置有倾斜平面,尤其是形成腔的壁部的侧表面和底部的上表面之间的角可大于90度。
同时,主体410的上表面的形状可择自包括三角形、矩形、多边形以及圆形的各种形状,并且其形状不限于此。
发光器件420例如可为发出彩色光(例如红光、绿光、蓝光或白光)的彩色发光器件或发出紫外光的紫外(UV)发光器件,然而器件的类型不限于此。此外,多个发光器件420可安装在主体410中。
发光器件420包括凹口或岛状物,因而当有静电施加时阻挡通过位错的电流聚集,并且提高了ESD耐抗性。
同时,如同图1-图3所示,发光器件420可应用于平面型(其中所有电端子布置在其上表面上)或垂直型(其中电端子布置在其上表面和下表面上)。
图4示出了发光器件420布置在第二电极532上并通过线接合来接合到第一电极层431和第二电极层432的情况,接合方法不限于此,可使用线接合和电连接(利用了倒装芯片或裸片接合)。
第一电极层431和第二电极层432彼此电性隔离并将电力供应到发光器件420。此外,第一电极层431和第二电极层432反射由发光器件420生成的光,因而增加了发光效率并排放了发光器件420所生成的热量。
第一电极层431和第二电极层432包含钛(Ti)、铜(Cu)、镍(Ni)、金(Au)、铬(Cr)、钽(Ta)、铂(Pt)、锡(Sn)、银(Ag)、磷(P)、铝(Al)、铟(In)、钯(Pd)、钴(Co)、硅(Si)、锗(Ge)、铪(Hf)、钌(Ru)、铁(Fe)、或它们的合金中的至少一种金属。
此外,第一电极层431和第二电极层432可具有单层或多层结构。
密封剂440填充了腔,从而其覆盖了发光器件420。密封剂440可由例如为硅树脂、环氧树脂以及其他树脂的材料制成,并且可通过在腔中填充材料、接着使用UV光或热进行固化来形成。
同时,密封剂440可包括荧光物(phosphor)450。根据发光器件420所生成的光的波长来确定荧光物450的类型,从而使得发光器件封装400能够呈现白光。
此外,荧光物450可以以在发光器件420的上表面或主体410的上表面上进行共形涂覆(conformal coating)的形式进行布置。
荧光物450被从发光器件420发出的第一光所激发,以产生第二光。例如,当发光器件420为蓝色发光器件并且荧光物为黄荧光物时,黄荧光物被蓝光激发并且发出黄光,蓝色发光器件发出的蓝光与由蓝光激发并生成的黄光进行混合,以容许发光器件封装400呈现白光。
类似地,在发光器件530为绿色发光二极管的情况下,绛红色荧光物(magenta phosphor)或者蓝和红荧光物的组合可为示例性的;并且在发光器件420为红色发光二极管的情况下,青荧光物(cyan phosphor)或蓝和绿荧光物的组合可为示例性的。
这样的荧光物450可为公知的荧光物,例如YAG、TAG、硫化物、硅酸盐、铝酸盐、氮化物、碳化物、硅基氮化物(nitridosilicate)、硼酸盐、氟化物以及磷酸盐。
根据一个实施例的发光器件封装500在基板上排列了多个,并且例如为导光板、棱镜片和扩散片(diffusion sheet)的光学组件可布置在发光器件封装400的光路上。发光器件封装、基板以及光学组件可用作光单元。
在另一个实施例中,可实现包括在前述实施例中公开的发光器件或发光器件封装的显示器件、指示器件以及照明器件。例如,照明器件可包括灯、街灯等。
此外,可应用根据实施例的发光器件,而不限于上述实施例的配置和方法,并且可以以各实施例的整体或部分的选择性组合进行配置。
此外,可通过从包括第一导电半导体层、有源层以及第二导电半导体层的结构去除基板,并在暴露的第一导电半导体层和第二导电半导体层的上表面上形成电极,来形成垂直发光器件。
图5为示出根据一实施例的包括发光器件的照明器件的透视图。图6为示出沿图5的照明器件的线C-C’的剖面的截面图。
参见图5和图6,照明器件600可包括主体610、连接到主体610的盖子630以及布置在主体610的两端处的端盖650。
发光器件模块640连接到主体610的上表面,并且主体610可由展示出较好导电性和散热效果的金属材料组成,以通过主体610的顶部将发光器件封装644所生成的热排放到外部。
发光器件封装644以多种颜色和多行安装在PCB 642上以构成阵列,并且可根据需要彼此间隔开预定距离或不同距离,以控制亮度。PCB 642可为金属芯PCB(MPPCB)或FR4制成的PCB。
发光器件封装644包括延伸的引线框(未示出)以提高光的照射,因而增强发光器件封装644的可靠性和效率,并且延长包括发光器件封装622和发光器件封装644的照明器件600的使用寿命。
盖子630可呈现圆形以环绕主体610的底部,而不限于此。
盖子630保护发光器件模块640免于受到外部物质的影响。此外,盖子630防止从发光器件封装644生成刺眼强光(glare),并包括将光均匀地排放到外部的散射粒子。此外,棱镜图案等可形成在盖子630的内表面和外表面至少其一上。可替代地,荧光物可应用于盖子630的内表面和外表面至少其一。
同时,盖子630应展示出优良透光性,以通过盖子630将发光器件封装644生成的光排放到外部,并且盖子630应展示出足够的抗热性以耐受发光器件封装644所发出的热。优选地,盖子630由包括聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)等的材料组成。
端盖650布置在主体610的两端并且可用于密封电源器件(未示出)。此外,端盖650设置有电力插头(power pin)652,以容许照明器件600应用于荧光灯已被移除的传统端子,而不使用任何额外器件。
图7为示出根据一实施例的包括发光器件的液晶显示器的分解透视图。
图7示出边缘光型液晶显示器件700,其包括液晶显示面板710和背光单元770,以将光供应到液晶显示面板710。
液晶显示面板710使用从背光单元770供应的光来显示图像。液晶显示面板710包括彼此面对的滤色镜基板712和薄膜晶体管基板714,从而使得液晶***在其间。
滤色镜基板712可实现将要通过液晶显示面板710显示的图像的颜色。
薄膜晶体管基板714电连接到印刷线路板718,其上多个电路元件通过驱动膜717进行安装。响应于从印刷线路板718供应的驱动信号,薄膜晶体管基板714可将来自印刷线路板718的驱动电压施加到液晶。
薄膜晶体管基板714包括薄膜晶体管和像素电极,该像素电极形成为由例如玻璃或塑料的透明材料组成的另一基板上的薄膜。
背光单元770包括:发光器件模块720;导光板730,将从发光器件模块720发出的光转换成表面光并将该光供应到液晶显示面板710;多个膜752、766以及764,以使来自导光板730的光的亮度均匀并提高垂直入射;以及反射片740,以将发送到导光板730背部的光反射到导光板730。
发光器件模块720包括多个发光器件封装724以及PCB 722,该PCB 722上安装有发光器件封装724以形成阵列。
同时,背光单元770包括:扩散膜766,以将从导光板730入射的光向液晶显示面板710扩散(diffuse);棱镜膜752,聚集所扩散的光,因而提高垂直入射;以及保护膜764,保护棱镜膜752。
图8为示出根据一实施例的包括发光器件的液晶显示器的分解透视图。图7中示出和描述的内容不再详细提及。
图8示出直下式液晶显示器件800,其包括液晶显示面板810和背光单元870,以将光供应到液晶显示面板810。
已经参见图7描述了液晶显示面板810,因而将省略其细节说明。
背光单元870包括多个发光器件模块823、反射片824、底盘(lowerchassis)830(其中容纳了发光器件模块823和反射片824)、布置在发光器件模块823上的扩散板840、以及多个光学膜860。
发光器件模块823包括PCB 821,使得能够安装多个发光器件封装824从而形成阵列。
反射片824将发光器件封装822所生成的光向液晶显示面板810反射,以提高发光效能。
同时,从发光器件模块823发出的光入射到扩散板840上,并且光学膜860布置在扩散板840上。光学膜860包括扩散膜866、棱镜膜850以及保护膜864。
本发明的实施例能够降低由于位错引起的漏电流,并提高对静电放电(ESD)的耐抗性。
尽管为了说明的目的公开了实施例,然而本领域普通技术人员将理解各种变形、增加和替换是可能的,而没有偏离在如同所附权利要求中公开的实施例的范围和精神。例如,在实施例中详细描述的各元件可被修改。此外,将理解,在所附权利要求中限定的实施例的范围覆盖了与这些变形、增加和替换相关的区别。
Claims (22)
1.一种发光器件,包括:
基板;
第一导电半导体层,布置在所述基板上;
有源层,布置在所述第一导电半导体层上;以及
第二导电半导体层,布置在所述有源层上;
其中所述第一导电半导体层包括在上表面处设置有凹口的第一层、布置在所述第一层上的第二层、以及布置在所述第二层上的第三层;
其中所述第一导电半导体层还包括位于所述第一层与所述第二层之间的阻挡层,并且所述阻挡层沿所述凹口布置。
2.根据权利要求1所述的发光器件,其中所述第二层的上表面是平坦的。
3.根据权利要求2所述的发光器件,其中所述阻挡层为AlGaN/GaN超晶格层。
4.根据权利要求1至3中的任一权利要求所述的发光器件,其中所述第一层和所述第三层掺杂有杂质。
5.根据权利要求1至3中的任一权利要求所述的发光器件,其中所述第二层包括硅。
6.根据权利要求1至3中的任一权利要求所述的发光器件,其中所述第二层未掺杂。
7.根据权利要求1至3中的任一权利要求所述的发光器件,其中所述凹口具有六棱锥或楔形形状。
8.一种发光器件,包括:
基板;
第一导电半导体层,布置在所述基板上;
有源层,布置在所述第一导电半导体层上;以及
第二导电半导体层,布置在所述有源层上;
其中所述第一导电半导体层包括含有多个岛状物的第一层、布置在所述第一层上的第二层、以及布置在所述第二层上的第三层。
9.根据权利要求8所述的发光器件,其中所述岛状物包含MgN、SiN和/或ZnN的至少其中之一。
10.根据权利要求8所述的发光器件,其中所述岛状物布置在所述第一层上的至少一个部分处。
11.根据权利要求8至10中的任一权利要求所述的发光器件,其中所述第二层的上表面是平坦的。
12.根据权利要求8至10中的任一权利要求所述的发光器件,其中所述第二层包括硅。
13.根据权利要求8至10中的任一权利要求所述的发光器件,其中所述第一层和所述第三层掺杂有杂质。
14.根据权利要求8至10中的任一权利要求所述的发光器件,其中所述第一层在所述多个岛状物之中的两个相邻岛状物之间延伸。
15.根据权利要求1至3以及8至10中的任一权利要求所述的发光器件,其中所述第一导电半导体层掺杂有n型掺杂物。
16.根据权利要求1至3以及8至10中的任一权利要求所述的发光器件,其中所述第二导电半导体层掺杂有p型掺杂物。
17.根据权利要求1至3以及8至10中的任一权利要求所述的发光器件,还包括布置在所述第二导电半导体层上的透光电极层。
18.根据权利要求1至3以及8至10中的任一权利要求所述的发光器件,还包括:
第一电极,电连接到所述第一导电半导体层;以及
第二电极,布置在所述第二导电半导体层上。
19.根据权利要求1至3以及8至10中的任一权利要求所述的发光器件,还包括用于阻挡电子的中间层,***在所述有源层与所述第二导电半导体层之间。
20.一种发光器件封装,包括根据权利要求1至19中的任一项所述的发光器件。
21.一种照明器件,包括根据权利要求1至19中的任一项所述的发光器件。
22.一种背光单元,包括根据权利要求1至19中的任一项所述的发光器件。
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CN105355741A (zh) * | 2015-11-02 | 2016-02-24 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
CN105355741B (zh) * | 2015-11-02 | 2017-09-29 | 厦门市三安光电科技有限公司 | 一种led外延结构及制作方法 |
CN108767082A (zh) * | 2018-04-28 | 2018-11-06 | 安徽芯瑞达科技股份有限公司 | 一种聚苯乙烯隔热量子点led灯珠及其制作方法 |
CN111834496A (zh) * | 2020-05-27 | 2020-10-27 | 华灿光电(浙江)有限公司 | 发光二极管外延片及其制备方法 |
CN111834496B (zh) * | 2020-05-27 | 2021-08-06 | 华灿光电(浙江)有限公司 | 发光二极管外延片及其制备方法 |
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KR20120086594A (ko) | 2012-08-03 |
US20120187370A1 (en) | 2012-07-26 |
KR101778161B1 (ko) | 2017-09-13 |
US9455371B2 (en) | 2016-09-27 |
EP2482344A3 (en) | 2016-01-06 |
EP2482344A2 (en) | 2012-08-01 |
US9024333B2 (en) | 2015-05-05 |
CN102623594B (zh) | 2017-03-01 |
EP2482344B1 (en) | 2019-11-27 |
US20150200329A1 (en) | 2015-07-16 |
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