CN102623591B - Super-radiation light-emitting tube based on mixed structure of quantum dot and quantum well material - Google Patents
Super-radiation light-emitting tube based on mixed structure of quantum dot and quantum well material Download PDFInfo
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Abstract
The invention relates to a semiconductor device and particularly relates to a super-radiation light-emitting tube based on a mixed structure of a quantum dot and a quantum well material. The super-radiation light-emitting tube comprises a lower electrode, a substrate, a lower separation limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper separation limiting layer, a cover layer, a dielectric film layer and an upper electrode. The super-radiation light-emitting tube is characterized in that the active layer is the mixed structure of the quantum dot and the quantum well material. The super-radiation light-emitting tube has the advantages of wide light spectrum and high output power.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure.
Background technology
Superradiance is the spontaneous emission ASE(Amplifier Spontaneous Emission of amplification), be a kind of directed radiation phenomenon of gain media under strong excited state.When the excitation density in gain media is enough high, charge carrier in gain media is subject to exciting of spontaneous emission photon, make the photon numbers avalanche multiplication of stimulated emission, luminous intensity sharply increases on superlinearity ground thereupon, and spectral width is narrowed down, it is main by initial spontaneous emission, accounting for the leading very fast spontaneous emission that develops into amplify.Super-radiance light emitting diode (SLD) is a kind of semiconductor light sources between laser (LD) and light-emitting diode (LED), it has that power output is high, spectral width is wide, good stability, beam directionality are good, and the good characteristic such as coherence length is short, can provide desirable light source for optic fiber gyroscope etc.Along with the further expansion of optical communication and optical application, it can also be for optical time domain reflectometer, Optical Coherence Tomography Imaging Technology, light wavelength-multiplexing systems, optical information processing technology.Comparing it with other luminescent device has obvious advantage, so suitable wide of its application prospect.
Since first SLD invention, people with regard to how to improve it luminous power and coupled power, increase spectral width, reduce coherence length, improve modulating frequency, reduce the spectral modulation degree of depth, reduce the problems such as temperature characterisitic, conduct extensive research work.The method that improves device performance at present is mainly done from two aspects: one, the technique of element manufacturing, be mainly that the sharp of suppression device F-P chamber penetrated effectively, this is the necessary condition that superradiance occurs.The method often adopting has: uptake zone inhibition, evaporation anti-reflective film, inclination angle suppression characteristic etc.; Two, on the material of device, from body Materials to single quantum well, from single quantum well to Multiple Quantum Well, then to quantum-dot structure.For quantum well SLD, in narrow band gap active area materials, charge carrier one dimension is limited, and the stair-stepping density of electronic states of class significantly reduces SLD operating current, and power output obviously improves.Further, adopt non-homogeneous multi-quantum pit structure, introduce the quantum well layer of different in width as SLD active area, utilize the ground state level transition of these quantum well simultaneously, device output spectrum can obtain further broadening.But for non-homogeneous Multiple Quantum Well SLD, because different in width quantum well ground state transition energy is discontinuous, this multi-level luminous superposition causes the out-of-shape of bands of a spectrum more.For quanta point material, its electronics is all restricted three dimensions, has the density of states as atom, and the electronics, the photonic device that adopt quantum dot to make have the performance more excellent than quantum well in theory.Although each quantum dot has, be similar to the discrete energy levels that atom is the same, the distribution of sizes general satisfaction Gaussian Profile of quantum dot, together with the ground state of different size quantum dot overlaps on excited level, distributes the energy level approximate continuous of quantum dot set.Therefore,, when increasing Injection Current raising spectral width, quantum dot ground states and excitation state are contributed the spectrum output that is easy to obtain regular shape simultaneously.Even so, but in theory, preparing on high-power SLD, quantum well and body material will have superiority than quantum dot.
Although own through comparative maturity for the theoretical research of SLD at present, increasing new application requirements SLD has better performance.This just requires us constantly to improve device technology and material, adopts new device architecture and penetrates to suppress better to swash.Therefore, carrying out the technique of superradiance device and investigation of materials and improvement has very important significance to the performance of whole device.
Summary of the invention
The object of the present invention is to provide a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure, this super radiation light emitting tube spectral width, power output is high.
For achieving the above object, technical scheme of the present invention is: a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure, comprise that the bottom electrode, substrate, lower separation limit layer, lower graded index ducting layer, active layer, upper graded index ducting layer, upper separation limit layer, cap rock, media coating, the top electrode that set gradually form, described active layer is quantum dot and quantum-well materials mixed structure.
In embodiment of the present invention one, above-mentioned quantum dot and quantum-well materials mixed structure are two-layer or sandwich construction, described double-layer structure is by the single quantum dot layer along in Material growth direction and single quantum well layer is stacked forms, and described sandwich construction is by a plurality of quantum dot layers along in Material growth direction and a plurality of quantum well layer is stacked forms.
Above-mentioned quantum dot and quantum-well materials mixed structure comprise barrier layer on a lower barrierlayer and, between described lower barrierlayer and upper barrier layer, be provided with one or more quantum dot layer and one or more quantum well layer, between two adjacent quantum dot layers, be provided with a some wall, between adjacent quantum dot layer and quantum well layer, be provided with a trap wall.
In embodiment of the present invention two, above-mentioned quantum dot and quantum-well materials mixed structure consist of the single quantum dot region perpendicular in Material growth direction and single quantum well region, or consist of a plurality of quantum dot region that are arranged alternately perpendicular to Material growth direction and a plurality of quantum well region; Described quantum dot region consists of one or more quantum dot layer, and described quantum well region consists of one or more quantum well layer.
The top electrode of above-mentioned quantum dot region and quantum well region separates, and forms two or more pumping areas with bottom electrode, and centre is provided with electrode isolation bar district.
The invention has the beneficial effects as follows the characteristic of non-homogeneous, the continuous distribution that can utilize the peculiar size of quantum dot itself, size, realize level and smooth, the wider spectrum output characteristic of superradiation light-emitting diode, utilize the quantum well structure not only can spread spectrum simultaneously, more can improve power output, result of use is good, has very strong Practical significance.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure of the present invention.
Fig. 2 is quantum dot and the quantum-well materials mixed structure schematic diagram of the embodiment of the present invention one.
Fig. 3 is quantum dot and the quantum-well materials mixed structure schematic diagram of the embodiment of the present invention two.
Fig. 4 is the structural representation of the bar shaped current injection area of the embodiment of the present invention.
Embodiment
Super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure of the present invention, as shown in Figure 1, comprise that the bottom electrode 1, substrate 2, lower separation limit layer 3, lower graded index ducting layer 4, active layer 5, upper graded index ducting layer 6, upper separation limit layer 7, cap rock 8, media coating 9, the top electrode 10 that from bottom to top set gradually form.Described active layer 5 is quantum dot and quantum-well materials mixed structure.Described deielectric-coating is deposited on separation limit layer, erodes away the bar shaped current injection area of inclination on deielectric-coating; Strip electrode injection region can also be divided into multistage by deielectric-coating.
In the embodiment of the present invention one, described quantum dot and quantum-well materials mixed structure are to mix by quantum dot layer and quantum well layer the two-layer or sandwich construction forming, and material is San Wu family semiconductor.Described double-layer structure is by the single quantum dot layer along in Material growth direction and single quantum well layer is stacked forms, and described sandwich construction is by a plurality of quantum dot layers along in Material growth direction and a plurality of quantum well layer is stacked forms.
As shown in Figure 2, above-mentioned quantum dot and quantum-well materials mixed structure comprise barrier layer 16 on a lower barrierlayer 11 and.Long on lower barrierlayer 11 have quantum well layer 12 or quantum dot layer 14, as the carrier of quantum well layer 12 or quantum dot layer 14, and plays the effect of limiting carrier.Upper barrier layer 16 grows in to be gone up on a quantum dot layer 14 or quantum well layer 12 most.On this, barrier layer 16 can be by carrier confinement within quantum dot layer 14 and quantum well layer 12 with lower barrierlayer 11.Between described lower barrierlayer 11 and upper barrier layer 16, be provided with one or more quantum dot layer 14 and one or more quantum well layer 12.Between two adjacent quantum dot layers, be provided with a some wall 15, play the effect of cutting apart two adjacent quantum dot layers 14; Between adjacent quantum dot layer and quantum well layer, be provided with a trap wall 13.
Wherein, quantum dot layer 14 is San Wu family material with quantum well layer 12, by regulating the component of material and the deposition of quantum dot or quantum well in quantum dot layer 14 and quantum well layer 12, just can change emission wavelength.If contain a plurality of quantum dot layers 14, the component of each quantum dot layer 14 can be identical with deposition, also can be different; In same multi layered quantum dots layer, the component of each layer of quantum dot can be identical with deposition, also can be different.If contain a plurality of quantum well layers 12, the component of each quantum well layer can be identical with deposition, also can be different; In same multiple quantum well layer, the component of each layer of quantum well can be identical with deposition, also can be different.
Wherein, upper barrier layer 16, some trap wall 13, some point wall 15 be San Wu family material with lower barrierlayer 11, by the component of adjusting material, make the energy gap of material be greater than the energy gap of quantum dot layer 14 materials.Upper barrier layer 16, some trap wall 13, a some point wall 15 can be identical with the component of the material of lower barrierlayer 11, also can difference.
The succession of quantum well and quantum dot can be the quantum well layer regrowth quantum dot layer of first growing, and can be also the quantum dot layer regrowth quantum well layer of first growing, and quantum well layer and quantum dot layer can also alternating growths.
In the embodiment of the present invention two, described quantum dot and quantum-well materials mixed structure consist of the single quantum dot region perpendicular in Material growth direction and single quantum well region, or formed by a plurality of quantum dot region 22 that are arranged alternately perpendicular to Material growth direction and a plurality of quantum well region 23, material is San Wu family semiconductor.
As shown in Figure 3, described quantum dot region 22 can contain one or more quantum dot layer 21, has a quantum dot region 22 at least; Described quantum well region 23 can be single quantum well layer or multiple quantum well layer, has a quantum well region 23 at least.
The top electrode of above-mentioned quantum dot region and quantum well region separates, and forms two or more pumping areas with bottom electrode, and centre is provided with electrode isolation bar district.
By regulating the component of material and the deposition of quantum dot in quantum dot layer 21, just can change emission wavelength.If contain a plurality of quantum dot region 22, the component of each quantum dot region can be identical with deposition, also can be different; If contain a plurality of quantum dot layers 21, in same multi layered quantum dots district, the component of each floor quantum dot can be identical with deposition, also can be different.
Component and deposition by quantum well layer material in quantum well district 23, just can change emission wavelength.If contain a plurality of quantum well region 23, in each quantum well region, the component of quantum well can be identical with deposition, also can be different; If contain a plurality of quantum well layers, in same multiquantum well region, the component of each layer of quantum well can be identical with deposition, also can be different.
Each layer of quantum dot or quantum well are clipped between two walls.By control interval layer material component, make the energy gap of material be greater than the energy gap of quantum dot layer or quantum well layer material.The component of the material of each wall can be identical, also can be different.If only have single quantum dot layer or single quantum well layer, just without this wall.
The succession of quantum well region and quantum dot region can be the quantum well region of first growing, and regrowth quantum dot region after photoetching can be also the quantum dot region of first growing, regrowth quantum well region after photoetching.
Device bar shaped current injection area can be divided into multistage by deielectric-coating 31, makes the current injection area of quantum dot region and quantum well region separately.
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1:
Active area is: take InGaAsP as quantum well and quantum dot, AlGaInAs or InGaAsP are potential barrier.
By pre-designed epitaxial structure, adopt MOCVD or MBE to grow epitaxial loayer.Concrete step is: first grown buffer layer on InP substrate, regrowth under-clad layer, sch layer, then the core of the present invention of growing: quantum dot and quantum-well materials are mixed with source region, the 5 layers of quantum well layer of first growing, wherein the thickness of trap layer is: 5-8nm, and the thickness of building layer is: between 5-10nm, strain is all in 1.2%; Then the multi layered quantum dots layer of growing, quantum dot layer has 5 cycles, wall 3-10nm, emission center wavelength is 1.1um-1.7um scope (design parameter is different and different by design).Above-mentioned these extensions can realize accurate control on MOCVD.
Embodiment 2:
Active area is: take InGaAsP as quantum well and quantum dot, AlGaInAs or InGaAsP are potential barrier.
By pre-designed epitaxial structure, adopt MOCVD or MBE to grow epitaxial loayer.Concrete step is: first grown buffer layer on InP substrate, regrowth under-clad layer, sch layer, then the core of the present invention of growing: quantum dot and quantum-well materials are mixed with source region, the 5 layers of quantum well layer of first growing, wherein the thickness of trap layer is: 5-8nm, and the thickness of building layer is: between 5-10nm, strain is all in 1.2%; After photoetching, further by wet method or dry etching part quantum well region, the region growing multi layered quantum dots layer after etching subsequently, quantum dot layer has 5 cycles, wall 3-10nm, emission center wavelength is 1.1um-1.7um scope (design parameter is different and different by design).This quantum dot and quantum-well materials are mixed with the growth pattern in source region, but the quantum dot layer in 5 cycles of also first growing, 5 layers of quantum well layer of regrowth after photoetching.
Embodiment 3:
As shown in Figure 4, on the basis of embodiment 2, the rear deposition medium rete 9 of the cap rock 8 of having grown, forms multistage bar shaped current injection area 32 after photoetching, each section of current injection area, by separating by deielectric-coating 31, makes the current injection area of 22He quantum well region, quantum dot region 23 separately.
Be more than preferred embodiment of the present invention, all changes of doing according to technical solution of the present invention, when the function producing does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (3)
1. the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure, comprise that the bottom electrode, substrate, lower separation limit layer, lower waveguide layer, active layer, upper ducting layer, upper separation limit layer, cap rock, media coating, the top electrode that set gradually form, and is characterized in that: described active layer is quantum dot and quantum-well materials mixed structure; Described quantum dot and quantum-well materials mixed structure are two-layer or sandwich construction, described double-layer structure is by the single quantum dot layer along in Material growth direction and single quantum well layer is stacked forms, and described sandwich construction is by a plurality of quantum dot layers along in Material growth direction and a plurality of quantum well layer is stacked forms; Described quantum dot and quantum-well materials mixed structure comprise barrier layer on a lower barrierlayer and, between described lower barrierlayer and upper barrier layer, be provided with one or more quantum dot layer and one or more quantum well layer, between two adjacent quantum dot layers, be provided with a some wall, between adjacent quantum dot layer and quantum well layer, be provided with a trap wall.
2. the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure, comprise that the bottom electrode, substrate, lower separation limit layer, lower waveguide layer, active layer, upper ducting layer, upper separation limit layer, cap rock, media coating, the top electrode that set gradually form, and is characterized in that: described active layer is quantum dot and quantum-well materials mixed structure; Described quantum dot and quantum-well materials mixed structure consist of the single quantum dot region perpendicular in Material growth direction and single quantum well region, or consist of a plurality of quantum dot region that are arranged alternately perpendicular to Material growth direction and a plurality of quantum well region; Described quantum dot region consists of one or more quantum dot layer, and described quantum well region consists of one or more quantum well layer.
3. the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure according to claim 2, it is characterized in that: the top electrode of described quantum dot and quantum-well materials mixed structure separates, form two or more pumping areas with bottom electrode, centre is provided with electrode isolation bar district.
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| CN103515494B (en) * | 2013-10-25 | 2015-11-18 | 中国电子科技集团公司第四十四研究所 | The chip structure of super-radiance light emitting diode spectral ripple can be reduced |
| CN106785246A (en) * | 2016-12-14 | 2017-05-31 | 上海电机学院 | A kind of phasmon active waveguide switching device |
| CN106877173A (en) * | 2017-02-28 | 2017-06-20 | 苏州达沃特光电科技有限公司 | A kind of SQW/quantum dot hybrid laser chip structure for medical and beauty treatment laser |
| CN112072468A (en) * | 2020-10-13 | 2020-12-11 | 江苏华兴激光科技有限公司 | State density coupling semiconductor laser |
| CN117393666B (en) * | 2023-12-12 | 2024-03-22 | 度亘核芯光电技术(苏州)有限公司 | Super-radiation light-emitting diode |
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| CN1555570A (en) * | 2001-07-31 | 2004-12-15 | ����ŵ˹�ݴ�ѧ����ίԱ�� | Coupled quantum dot and quantum well semiconductor device and method of making the same |
| CN101764355A (en) * | 2010-01-19 | 2010-06-30 | 中国电子科技集团公司第十三研究所 | Quantum well epitaxy structure of semiconductor laser in 940 nm-1000 nm wave band |
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| CN1555570A (en) * | 2001-07-31 | 2004-12-15 | ����ŵ˹�ݴ�ѧ����ίԱ�� | Coupled quantum dot and quantum well semiconductor device and method of making the same |
| CN101764355A (en) * | 2010-01-19 | 2010-06-30 | 中国电子科技集团公司第十三研究所 | Quantum well epitaxy structure of semiconductor laser in 940 nm-1000 nm wave band |
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