CN102623588A - Method for manufacturing epitaxial structure of gallium nitride green light-emitting diode - Google Patents

Method for manufacturing epitaxial structure of gallium nitride green light-emitting diode Download PDF

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CN102623588A
CN102623588A CN2012100935645A CN201210093564A CN102623588A CN 102623588 A CN102623588 A CN 102623588A CN 2012100935645 A CN2012100935645 A CN 2012100935645A CN 201210093564 A CN201210093564 A CN 201210093564A CN 102623588 A CN102623588 A CN 102623588A
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layer
gan
green light
gallium nitride
epitaxial structure
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CN102623588B (en
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孙波
赵丽霞
伊晓燕
刘志强
魏学成
王国宏
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a method for manufacturing an epitaxial structure of a gallium nitride green light-emitting diode. The method comprises the following steps of: 1, providing a substrate; 2, sequentially epitaxially growing a u-GaN layer, an n-GaN layer, a multi-quantum well layer and a p-GaN coupling layer on the substrate; 3, growing a nano-metal layer on the p-GaN coupling layer; 4, growing a P-GaN cover layer on the nano-metal layer; and 5, growing a p-GaN current expansion layer on the P-GaN cover layer to finish the manufacture of the epitaxial structure. The internal quantum efficiency of the green light-emitting diode is enhanced by utilizing metallic plasma with a core-shell structure.

Description

The method for preparing gallium nitride green light LED epitaxial structure
Technical field
The invention belongs to technical field of semiconductor illumination, be meant a kind of method for preparing gallium nitride green light LED epitaxial structure especially.
Background technology
Gallium nitride material is a third generation semi-conducting material; Energy gap is 3.4ev; Because its stable in properties is again the direct band gap luminescent material that wavelength is positioned at royal purple light, therefore be to make royal purple light-emitting diode (LED); The transistorized material of high mobility, national semiconductor lighting is classified gallium nitride material as center.But gallium nitride light-emitting diode is faced with problems at present, especially at green light LED.Because the higher In component that the gallium nitride green light LED needs, but high In ingredient, the bigger stress of generation makes that the internal quantum efficiency of green light LED is lower.Seem extremely important so how research strengthens the internal quantum efficiency of green light LED.Because the higher In component that the gallium nitride green light LED needs, but high In ingredient, the bigger stress of generation makes that the internal quantum efficiency of green light LED is lower.Seem extremely important so how research strengthens the internal quantum efficiency of green light LED.The present invention adopts the metal plasma bulk effect, and the plasma pattern (LSP) of the localization that produces strengthens the internal quantum efficiency of green light LED, from but solve one of method of low this difficult problem of green light LED efficient.The method of the internal quantum efficiency of plasma enhancing at present is a lot; But all be the metal of individual layer, for example golden or silver metal, the manufacture method of the metal nanoparticle of this individual layer needs The high temperature anneal to realize; High temperature takes off the fire processing and influences gallium nitride and indium gallium nitrogen material quality, makes it to degenerate.Simultaneously to strengthen the peak be limited to the plasma of single-layer metal, can not be well well matees with the emission wavelength of green light LED.What this method was not only made metallic plasma is not need The high temperature anneal, can avoid the influence that brings because of high annealing.The silver that adopts simultaneously, the enhancing peak position that golden nucleocapsid structure can be regulated plasma well enable to strengthen better the internal quantum efficiency of green light LED.
Summary of the invention
The objective of the invention is to, a kind of method for preparing gallium nitride green light LED epitaxial structure is provided, it is to utilize the plasma of the nucleocapsid structure of metal to strengthen the internal quantum efficiency of green light LED.
The present invention provides a kind of method for preparing gallium nitride green light LED epitaxial structure, may further comprise the steps:
Step 1: get a substrate;
Step 2: epitaxial growth u-GaN layer, n-GaN layer, multiple quantum well layer and p-GaN coupling layer successively on substrate;
Step 3: growing nano metal level on the p-GaN coupling layer;
Step 4: growth one P-GaN cap rock on the nano metal layer;
Step 5: growth one p-GaN current extending on the P-GaN cap rock, accomplish the preparation of epitaxial structure.
Wherein the material of substrate is silicon, sapphire or gallium nitride, and the surface of substrate is plane or micrographics PSS, perhaps nano graph.
Wherein the doping content of p-GaN coupling layer is 10 18/ cm 3, thickness is 20-70nm.
Wherein the growth pattern of nano metal layer is to grow through the inclination electron beam evaporation plating.
Wherein the material of nano metal layer is the nucleocapsid structure of silver and gold.
Wherein the nucleocapsid structure of nano metal layer is individual layer or multiple layer combination.
Wherein the doping content of P-GaN cap rock is 10 19/ cm 3, thickness is 10-50nm.
Wherein the emission wavelength of multiple quantum well layer is 490-540nm.
The invention has the beneficial effects as follows:
A kind of method for preparing gallium nitride green light LED epitaxial structure of the present invention, it is to utilize the plasma of the nucleocapsid structure of metal to strengthen the internal quantum efficiency of green light LED.
Description of drawings
For making the auditor can further understand structure of the present invention, characteristic and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1-the 4th, making flow chart of the present invention.
Fig. 5 a, b are the sketch map of nucleocapsid structure of the present invention.
Embodiment
See also shown in Fig. 1-4, the present invention provides a kind of method for preparing gallium nitride green light LED epitaxial structure, may further comprise the steps:
Step 1: get a substrate 10 (consulting Fig. 1), wherein the material of substrate 10 is silicon, sapphire or gallium nitride, and the surface of substrate 10 is plane or micrographics PSS, perhaps nano graph
Step 2: epitaxial growth u-GaN layer 11, n-GaN layer 12, multiple quantum well layer 13 and p-GaN coupling layer 14 (consulting Fig. 1) successively on the substrate 10, the emission wavelength of multiple quantum well layer 13 is 490-540nm.P-GaN coupling layer 14 is the distances that intercouple of regulating MQW (MQW) and plasma.The coupling of the same MQW of plasma (MQW) exists the Best Coupling distance, and distance receives the emission wavelength of MQW and the influence that plasma strengthens peak position.Select suitable distance can make the internal quantum efficiency of green light LED obtain maximum lifting.
Step 3: growing nano metal level 15 (consulting Fig. 2) on p-GaN coupling layer 14; Wherein the growth pattern of nano metal layer 15 is to grow through inclination electron beam evaporation plating (EB). the inclination growing metal can self assembly form nano particle, avoid high-temperature annealing process.Metal nanoparticle is gold and the individual layer of silver or the nucleocapsid structure (consulting Fig. 5 a, b) of multilayer; The unique distinction of this structure is the enhancing peak position that can regulate plasma on a large scale; Make it think coupling with the wavelength of green light LED exactly, thereby improve the internal quantum efficiency of green light LED greatly.It mostly is to realize through chemical deposition technique that traditional nucleocapsid structure plasma is made, and the making nucleocapsid structure of this method exists problems, and for example process controllability is poor, and the nucleocapsid structure quality is not good, and the large area deposition difficulty is big etc.What the present invention adopted is brand-new inclination electron beam evaporation plating (EB) growing technology, and this technology not only technology is simple, and is with low cost, and reliability is high, and can realize large-area manufacturing nucleocapsid structure plasma.This technology promptly industrial circle is used, thereby can solve " greenish-yellow light belt problem ".
Step 4: nano metal layer 15 growth one deck P-GaN cap rock 16 (consulting Fig. 3), wherein P-GaN cap rock 16 doping contents are 10 19/ cm 3, thickness is that the effect of 10-50nm.P-GaN cap rock 16 is to cover the plasma metal level, prevents the electric leakage that causes because the plasma metal introduces when electricity injects.
Growth p-GaN current extending 17 (consulting Fig. 4) on the step 5:P-GaN cap rock 16.The effect of p-GaN current extending is the current extending as light emitting diode, and its doping content is 10 19/ cm 3
The above; Be merely the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with this technological people in the technical scope that the present invention disclosed; The conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.

Claims (8)

1. method for preparing gallium nitride green light LED epitaxial structure may further comprise the steps:
Step 1: get a substrate;
Step 2: epitaxial growth u-GaN layer, n-GaN layer, multiple quantum well layer and p-GaN coupling layer successively on substrate;
Step 3: growing nano metal level on the p-GaN coupling layer;
Step 4: growth one P-GaN cap rock on the nano metal layer;
Step 5: growth one p-GaN current extending on the P-GaN cap rock, accomplish the preparation of epitaxial structure.
2. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the material of substrate is silicon, sapphire or gallium nitride, the surface of substrate is plane or micrographics PSS, perhaps nano graph.
3. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the doping content of p-GaN coupling layer is 10 18/ cm 3, thickness is 20-70nm.
4. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the growth pattern of nano metal layer is to grow through the inclination electron beam evaporation plating.
5. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 4, wherein the material of nano metal layer is the nucleocapsid structure of silver and gold.
6. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 5, wherein the nucleocapsid structure of nano metal layer is individual layer or multiple layer combination.
7. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the doping content of P-GaN cap rock is 10 19/ cm 3, thickness is 10-50nm.
8. the method for preparing gallium nitride green light LED epitaxial structure as claimed in claim 1, wherein the emission wavelength of multiple quantum well layer is 490-540nm.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201258A (en) * 2014-08-22 2014-12-10 浙江大学城市学院 Visible light communication light emitting diode (LED) based on high modulation bandwidth of plasma and preparation method thereof
CN109671794A (en) * 2018-12-20 2019-04-23 深圳市科创数字显示技术有限公司 A kind of solar battery and preparation method thereof based on multi-quantum pit structure
CN112186081A (en) * 2020-09-28 2021-01-05 华灿光电(苏州）有限公司 Light emitting diode epitaxial wafer and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1118111A (en) * 1994-08-25 1996-03-06 夏普株式会社 Light-emitting diode array and method for fabricating the same
CN101950785A (en) * 2010-07-28 2011-01-19 山东大学 Structure of P-type GaN layer of GaN-based light-emitting diode chip
CN102169930A (en) * 2011-03-07 2011-08-31 山东大学 Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
CN102185074A (en) * 2011-04-07 2011-09-14 上海大学 Light emitting diode of Ag/zinc-oxide-based composite transparent electrode and preparation method thereof
CN102394263A (en) * 2011-11-22 2012-03-28 中国科学院半导体研究所 Method for enhancing electroluminescent property of n-ZnO/AlN/p-GaN light-emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1118111A (en) * 1994-08-25 1996-03-06 夏普株式会社 Light-emitting diode array and method for fabricating the same
CN101950785A (en) * 2010-07-28 2011-01-19 山东大学 Structure of P-type GaN layer of GaN-based light-emitting diode chip
CN102169930A (en) * 2011-03-07 2011-08-31 山东大学 Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles
CN102185074A (en) * 2011-04-07 2011-09-14 上海大学 Light emitting diode of Ag/zinc-oxide-based composite transparent electrode and preparation method thereof
CN102394263A (en) * 2011-11-22 2012-03-28 中国科学院半导体研究所 Method for enhancing electroluminescent property of n-ZnO/AlN/p-GaN light-emitting diode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
谷小虎、丁轶: "银－金（银）/核壳型结构的纳米线的合成与表征", 《中国化学会第26结学术年会纳米化学分会场论文集》 *
陈志辉: "银奈米柱阵列薄膜在不同厚度下之光学特性研究", 《国立台北科技大学光电工程系硕士班硕士学位论文》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201258A (en) * 2014-08-22 2014-12-10 浙江大学城市学院 Visible light communication light emitting diode (LED) based on high modulation bandwidth of plasma and preparation method thereof
CN109671794A (en) * 2018-12-20 2019-04-23 深圳市科创数字显示技术有限公司 A kind of solar battery and preparation method thereof based on multi-quantum pit structure
CN112186081A (en) * 2020-09-28 2021-01-05 华灿光电(苏州）有限公司 Light emitting diode epitaxial wafer and preparation method thereof
CN112186081B (en) * 2020-09-28 2021-08-03 华灿光电(苏州）有限公司 Light emitting diode epitaxial wafer and preparation method thereof

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