CN102623018A - Magnetic multi-layer film based on perpendicular-magnetization free layer, and magnetic sensor - Google Patents
Magnetic multi-layer film based on perpendicular-magnetization free layer, and magnetic sensor Download PDFInfo
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- CN102623018A CN102623018A CN2012100941913A CN201210094191A CN102623018A CN 102623018 A CN102623018 A CN 102623018A CN 2012100941913 A CN2012100941913 A CN 2012100941913A CN 201210094191 A CN201210094191 A CN 201210094191A CN 102623018 A CN102623018 A CN 102623018A
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Abstract
The invention discloses a magnetic multi-layer film based on a perpendicular-magnetization free layer, and a magnetic sensor. The magnetic multi-layer film comprises a first magnetic layer with an in-plane equilibrium magnetization state, a non-magnetic isolation layer formed on the first magnetic layer and a perpendicular-magnetization free layer formed on the non-magnetic isolation layer. The magnetic sensor comprises the magnetic multi-layer film. According to the structure, an included angle between the magnetization directions of the two magnetic layers in the magnetic multi-layer film is 90 DEG; and when the magnetic multi-layer film is used to make the magnetic sensor, the characteristics of small size, high resolution and simple structure and the like can be achieved.
Description
Technical field
The present invention relates to a kind of magnetic element, relate in particular to a kind of magnetic element and reach magnetic resistance (MR) sensor based on this multilayer film based on the perpendicular magnetization free layer with membrane structure.
Background technology
In information data storage system, mainly (MR magnetoresistive) forms magnetic head by magnetoresistive transducer.Generally, magnetoresistive transducer comprises reference layer, separation layer and free layer at least, and wherein free layer also is sensitive layer, and its magnetized state changes with change in magnetic flux density easily, and then causes output voltage to change.The magnetic resistance change rate size depends on the angle between two magnetospheres (free layer and reference layer).
Along with the increase of storage density, the size of magnetoresistive transducer is correspondingly more and more littler.The balance DOM is the conventional magnetoresistive transducer in the face, and in order to obtain better linearity output (or response), a kind of method is to utilize the shape anisotropy of magnetic material; Second method adopts particular design (like the Hui Sitong bridge) to compensate, and makes device complicated.These two kinds of methods all are unfavorable for miniaturization of devices.And as far as the conventional magnetoresistive transducer of Magnetized Material in the employing face, size is little also can bring a series of problem, is subject to thermal effect and external magnetic field influence like the magnetized state of sensitive layer, and then causes noise to increase and instability; Simultaneously, the DOM of sensitive layer also may depart from the in-plane equilibrium direction under small size, and this causes exporting weakening of signal.Therefore, utilize the interior magnetization of the face plan hard of the shapeization of material to satisfy the microminiaturization requirement.
Summary of the invention
One of the object of the invention is to provide a kind of magnetoresistance effect based on the perpendicular magnetization free layer, thereby overcomes deficiency of the prior art.
For realizing the foregoing invention purpose, the present invention has adopted following technical scheme:
A kind of magnetoresistance effect based on the perpendicular magnetization free layer comprises:
First magnetosphere with in-plane equilibrium magnetized state;
Be formed at the non magnetic separation layer on first magnetosphere;
And, be formed at the magnetic free layer on the non magnetic separation layer with perpendicular magnetization.
As preferred scheme, non-magnetic metal layer and/or thickness that said non magnetic separation layer employing thickness is 1.0 nm～6.0 nm are the tunnel insulation layer of 0.5 nm～3.0 nm.
Further, said non magnetic separation layer preferably adopts inorganic material dielectric film and/or organic material dielectric film, and said inorganic material dielectric film can be preferably from metal oxide dielectric film, metal-insulator nitride film, DLC film, EuS film and Ga
2O
3In the film any one or two or more combinations, but be not limited thereto.
Said metal oxide or metal nitride are to be formed through oxidation or nitrogenize by the metallic element that can constitute insulation course, and said metallic element is any one in Al, Ta, Zr, Zn, Sn, Nb and Mg or two or more combinations preferably, but are not limited thereto.
As preferred scheme, said first magnetosphere is mainly processed by the magnetic material with in-plane equilibrium magnetized state, and said magnetic material preferably adopts alloy and/or the compound with magnetic.
Further, preferably any one in 3d transition group magnetic metal or its alloy, 4f rare earth metal or its alloy and semimetal magnetic material or the two or more combinations of said magnetic material, but be not limited thereto;
Said 3d transition group magnetic metal or its alloy be any one in Fe, Co, Ni, CoFe, NiFe and CoFeB or two or more combinations preferably, but are not limited thereto;
Said semimetal magnetic material can be preferably from Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3With any one or the two or more combinations in the Heussler alloy, but be not limited thereto.
As preferred scheme; Said magnetic free layer is processed by the magnetic material with perpendicular magnetization; Said magnetic material is any one in Fe, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni and TeFeCoAl or two or more combinations preferably, but are not limited thereto.
As preferred scheme, this magnetoresistance effect also can comprise antiferromagnetic layer, and aforementioned first magnetosphere is formed on this antiferromagnetic layer.
Further, said antiferromagnetic layer is preferably formed by antiferromagnetism alloy and/or antiferromagnetic compound;
Said antiferromagnetism alloy is any one in Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn and Rh-Mn or two or more combinations preferably, but are not limited thereto.
Another object of the present invention is to provide a kind of magnetic sensor, it comprises aforesaid magnetoresistance effect.
By aforementioned structure, two magnetospheric DOM are 90 ° in the magnetoresistance effect of the present invention, have when processing Magnetic Sensor that size is little, resolution is high and characteristics such as simple in structure.
Description of drawings
Fig. 1 is the structural representation that the present invention is based on the magnetic sensor of perpendicular magnetization free layer;
Fig. 2 is the magnetic responsiveness curve synoptic diagram of magnetic sensor shown in Figure 1;
Fig. 3 is based on the structural representation of the magnetic sensor of perpendicular magnetization free layer in the embodiment of the invention 1;
Fig. 4 is based on the structural representation of the magnetic sensor of perpendicular magnetization free layer in the embodiment of the invention 2;
Fig. 5 is based on the structural representation of the magnetic sensor of perpendicular magnetization free layer in the embodiment of the invention 3.
Embodiment
That summarizes says; Magnetoresistance effect based on the perpendicular magnetization free layer of the present invention comprises following core membrane structure: [L1/SL/L2]; Wherein L1 representes to have magnetized ferromagnetic layer of in-plane equilibrium or semimetal magnetosphere, and its DOM relative fixed is called reference layer; SL representes non magnetic separation layer, and when SL was non-magnetic metal layer, its thickness was between 1.0～6.0 nm, and when SL was tunnel insulation layer, its typical thickness was between 0.5 nm and 3.0 nm; L2 is the ferromagnetic layer with perpendicular magnetization, and its balance DOM is perpendicular to the L1 layer, and its DOM can change under little external magnetic field effect, is called free layer.
Magnetic Sensor of the present invention (MR sensor) has the structure of the multilayer film of aforementioned perpendicular magnetization free layer; Electric current through this MR sensor; Just can detect the resistance variations of the MR sensor that the rotation owing to the DOM of free layer causes, with its function as the magnetic field of being detected.
Consult shown in Figure 1; As one of exemplary embodiment of the present invention; Should comprise a ferromagnetic layer or semimetal magnetosphere L1 and the ferromagnetic layer L2 with perpendicular magnetization based on the sensor of perpendicular magnetization free layer, between layer L1 and L2, accompanying thickness is a non-magnetic metal layer or an insulative barriers layer SL to several nanometers.Detect electric current usually perpendicular to multi-layer film surface.Among this Fig. 1, M
RLRepresent the reference layer magnetic moment, M
FLRepresent the magnetic moment of free layer.
In Fig. 1, the DOM of L1 is parallel to film surface, and its DOM is relatively-stationary, and the DOM of L2 is perpendicular to film surface, and its DOM is freely.Under the situation that has external magnetic field H, the DOM of L2 can change with the external magnetic field, causes the resistance R of sensor to change with external magnetic field H, and variation relation is following:
Wherein,
represents the resistance under the benchmark attitude; Promptly under this benchmark attitude; The DOM of L1 and L2 is parallel;
represents the formed angle of DOM of L1 and L2,
then represent resistance R variation between the parallel and antiparallel two states in DOM.As shown in Figure 2; Near null field, show as good linear relationship;
is relevant with the magnetospheric spin polarizability of L2 with L1 for its magnetoresistance ratio (mr), with the sensor of this structure fabrication will have simple in structure, size is little and characteristics such as resolution height.
Below in conjunction with some preferred embodiments and accompanying drawing technical scheme of the present invention is further described.
Consult Fig. 3, this structure based on the sensor 10 of perpendicular magnetization free layer is following: by silicon dioxide (SiO
2) or an insulation course 10A processing of similar material be formed on the silicon chip 10, on 10A, form a Seed Layer 10B; On Seed Layer 10B, form a lower magnetic layer L1 (reference layer) then, the DOM of this layer is parallel to film surface, and its DOM is relatively-stationary; A separation layer SL who is formed on the ferromagnetic layer L1; An another magnetosphere L2 (sensitive layer) and a protective seam CL who is formed on the L2 layer who is formed on the separation layer SL.The DOM of L2 layer is perpendicular to thin film planar, do not having approximately to become an angle of 90 degrees under the action of a magnetic field with first magnetic material layer, and the change of the DOM of L2 layer is to be reacted and rotate formation in the magnetic field of an effect.
Should be noted that the above sublayer 10B can be made up of nonmagnetic metal such as Ta, CuN, Ru; Aforementioned separation layer SL can be made up of nonmagnetic metal such as Au, Cu and Cr or metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or materials such as DLC film or EuS.Magnetosphere L1 can be selected from 3d transition group ferromagnetic metal or 4f rare earth metal and alloy thereof, as: Fe, CoFe, CoFeB, Heusler alloy; Magnetic L2 layer can be made up of the material that Fe, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni, TeFeCoAl etc. have a perpendicular magnetization; Protective seam CL can be made up of metal materials such as Au, Pt.
In the aforementioned embodiment, the balance DOM of lower magnetic layer L1 is by magnetization decision in the face of material, and its direction is relatively-stationary.But when the L1 layer was made up of the less magnetic material of coercive force, its DOM can overturn at less outer field action, and then influenced the magnetic field working range of sensor.To the problems referred to above, present embodiment further proposes a kind of sensor 20 based on the perpendicular magnetization free layer that belongs to the pinning type sensor, and its structure is as shown in Figure 4, that is: by silicon dioxide (SiO
2) or an insulation course 20A processing of similar material be formed on the silicon chip 20, on 20A, form a Seed Layer 20B; On Seed Layer 20B, form an antiferromagnetic layer AFM then, on antiferromagnetic layer AFM, form lower magnetic layer L1 (reference layer), the balance DOM of reference layer is because anti-ferromagnetic pinning effect and relatively-stationary; A separation layer SL who is formed on the ferromagnetic layer L1; An another magnetosphere L2 (sensitive layer) and a protective seam CL who is formed on the L2 layer who is formed on the separation layer SL.The DOM of L2 layer is perpendicular to thin film planar, do not having approximately to become an angle of 90 degrees under the action of a magnetic field with first magnetic material layer, and the change of the DOM of L2 layer is to be reacted and rotate formation in the magnetic field of an effect.
The material of Seed Layer 20B in the present embodiment, magnetosphere L1, separation layer SL, magnetosphere L2 and protective seam CL is similar with first embodiment, its description of Therefore, omited.Aforementioned antiferromagnetic layer AFM is made up of antiferromagnetic alloys such as Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn, Rh-Mn or NiO; Aforementioned antiferromagnetic layer AFM also can aforementioned antiferromagnetism alloy and the FM/NM composite multilayer membrane constitute, wherein FM/NM and L1 form artificial antiferromagnetic layer, thereby the balance DOM of L1 is fixed.Here FM can be made up of ferromagnetic alloies such as CoFe, and NM is made up of nonmagnetic metal such as Ru, Cu, Ag, and its thickness is about 0.8 nm.
In previous embodiment 1,2, the magnetosphere L2 with perpendicular magnetization is formed on the separation layer SL.Equally, when being formed under the separation layer SL, the magnetosphere L2 with perpendicular magnetization also can.Fig. 5 shows another structure based on perpendicular magnetization free layer sensor 30, and is specific as follows: by silicon dioxide (SiO
2) or an insulation course 30A processing of similar material be formed on the silicon chip 30, on 30A, form a Seed Layer 30B; On Seed Layer 30B, form the magnetosphere L2 with perpendicular magnetization then, its balance DOM becomes an angle of 90 degrees with thin film planar; A separation layer SL who is formed on the magnetosphere L2; A upper magnetic layer L1 and an antiferromagnetic layer AFM who is formed on the separation layer SL, the balance DOM of upper magnetic layer is parallel to thin film planar, and its DOM relative fixed.A protective seam CL who is formed on the magnetic L1 layer.
The material of Seed Layer 30B in the present embodiment, magnetosphere L1, separation layer SL, magnetosphere L2, antiferromagnetic layer AFM and protective seam CL is similar with first embodiment, its description of Therefore, omited.
It is pointed out that above-mentioned preferred embodiment is merely explanation technical conceive of the present invention and characteristics, its purpose is to let the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. magnetoresistance effect based on the perpendicular magnetization free layer is characterized in that it comprises:
First magnetosphere (L1) with in-plane equilibrium magnetized state;
Be formed at the non magnetic separation layer (SL) on first magnetosphere (L1);
And, be formed at the magnetic free layer (L2) on the non magnetic separation layer (SL) with perpendicular magnetization.
2. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 1 is characterized in that, it is that non-magnetic metal layer and/or the thickness of 1.0 nm～6.0 nm is the tunnel insulation layer of 0.5 nm～3.0 nm that said non magnetic separation layer preferably adopts thickness.
3. according to claim 1 or claim 2 magnetoresistance effect based on the perpendicular magnetization free layer; It is characterized in that; Said non magnetic separation layer preferably adopts inorganic material dielectric film and/or organic material dielectric film, and said inorganic material dielectric film is selected from metal oxide dielectric film, metal-insulator nitride film, DLC film, EuS film and Ga at least
2O
3In the film any one or two or more combinations.
4. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 3; It is characterized in that; Said metal oxide or metal nitride are to be formed through oxidation or nitrogenize by the metallic element that can constitute insulation course, and said metallic element is selected from any one or the two or more combinations among Al, Ta, Zr, Zn, Sn, Nb and the Mg at least.
5. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 1; It is characterized in that; Said first magnetosphere (L1) is mainly processed by the magnetic material with in-plane equilibrium magnetized state, and said magnetic material preferably adopts alloy and/or the compound with magnetic.
6. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 5; It is characterized in that said magnetic material is selected from any one or the two or more combinations in 3d transition group magnetic metal or its alloy, 4f rare earth metal or its alloy and the semimetal magnetic material at least;
Said 3d transition group magnetic metal or its alloy are selected from any one or the two or more combinations among Fe, Co, Ni, CoFe, NiFe and the CoFeB at least;
Said semimetal magnetic material is selected from Fe at least
3O
4, CrO
2, La
0.7Sr
0.3MnO
3With any one or the two or more combinations in the Heussler alloy.
7. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 1; It is characterized in that; Said magnetic free layer (L2) is processed by the magnetic material with perpendicular magnetization, and said magnetic material is selected from any one or the two or more combinations among Fe, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni and the TeFeCoAl at least.
8. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 1 is characterized in that it also comprises antiferromagnetic layer, and said first magnetosphere (L1) is formed on this antiferromagnetic layer.
9. the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 8 is characterized in that said antiferromagnetic layer is preferably formed by antiferromagnetic alloy and/or antiferromagnetic compound;
Said antiferromagnetic alloy is selected from any one or the two or more combinations among Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn and the Rh-Mn at least.
10. a magnetic sensor is characterized in that, it comprises the magnetoresistance effect based on the perpendicular magnetization free layer as claimed in claim 1.
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| CN106772148A (en) * | 2016-11-18 | 2017-05-31 | 清华大学 | A kind of small magnetic field measuring method |
| CN110927637A (en) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | Three-axis MTJ magnetic field sensor and preparation method thereof |
| CN114497362A (en) * | 2022-04-01 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Magnetic tunnel junction based on full-oxide single crystal thin film material and preparation method thereof |
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Application publication date: 20120801 |