CN102616831B - Preparation method of europium-doped indium trisulfide diluted magnetic semiconductor nano-materials - Google Patents
Preparation method of europium-doped indium trisulfide diluted magnetic semiconductor nano-materials Download PDFInfo
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Abstract
The invention discloses a preparation method of europium-doped indium trisulfide diluted magnetic semiconductor nano-materials and relates to the technical field of preparation of the nano-materials by gas-liquid phase chemical deposition at room temperature. The preparation method comprises the following steps: firstly preparing indium acetate, europium acetate, mercaptoethanol and deionized water into a solution to be reacted; secondly placing the solution to be reacted into a sealed reaction chamber, and slowly introducing excess H2S gas to obtain a deposition solution; and finally performing microwave heating on the deposition solution, and further performing centrifugal cleaning with the deionized water and ethanol. The In2S3: Eu3 plus nanoparticles prepared by the preparation method disclosed by the invention have higher room temperature saturation magnetization, and the saturation magnetization can be controlled by the doping content of europium and the filling speed of the H2S gas; and experimental conditions are stable and easy to operate, good in repeatability and convenient for large-scale production.
Description
Technical field
The invention belongs to technical field prepared by rare magnetic semiconductor nano material.Relate to liquid phase electroless plating under room temperature and mix europium indium trisulfide (In
2s
3eu
3+) preparation method of diluted magnetic semiconductor nano particulate material.
Background technology
Ultra-high speed along with information technology, the development of ultra broadband and over capacity, people have higher requirement for semi-conductive utilization, operate the electron spinning degree of freedom in semi-conductor or operate electron spinning and two degree of freedom of elementary charge in semi-conductor simultaneously, purpose is to realize electronics, photonics and magnetics three's fusion, form the life triangle.Magnetic semiconductor just in time meets this requirement, can realize the operation to electron spinning degree of freedom in semi-conductor, and therefore the research for magnetic semiconductor material has become study hotspot.
Dilute magnetic semiconductor can construct as spin and the bridge of electric charge the low-power consumption type semiconductor device that magnetic, electricity are integrated in one.The dilute magnetic semiconductor that it forms after to be partial cation in non magnetic semi-conductor replaced by transition metal or rare earth element.Dilute magnetic semiconductor can also can change due to its energy gap of difference and the lattice parameter of dopant ion and ionic concn thereupon, and this just makes dilute magnetic semiconductor be applicable to various devices by cutting out after being with.
In
2s
3energy gap be 2.00～2.20eV, there is good optics, photoelectron, acoustical behavioies etc., make it at photoelectric device, the aspects such as photovoltaic solar cell buffer layer application.
At present, the preparation method of the indium trisulfide dilute magnetic semiconductor of report has solid solution treatment method, sol-gel method, and the CHEMICAL TRANSPORT reaction method, such as people (2004) In such as Wei Chen
2s
3eu
3+nanoparticles prepared by solution techniques show blue, green, and red emission.The people such as A.Datta (2005) Mn
2+doped In
2s
3nanocomposites by sol-gel technique and study of their optical properties.
Summary of the invention
The technical problem to be solved in the present invention is, mixes the indium trisulfide diluted magnetic semiconductor nano particulate material of europium with liquid phase chemical deposition preparation under room temperature, makes it have higher room temperature saturation magnetization.
Resulting materials of the present invention is In
2s
3eu
3+the diluted magnetic semiconductor nano particle.
For realizing the present invention, the technical scheme of employing is:
A kind of preparation method who mixes the indium trisulfide rare magnetic semiconductor nano material of europium carries out in the reaction chamber of sealing, and air inlet duct and vent are arranged on reaction chamber;
At first prepare question response liquid: indium acetate, acetic acid europium, mercaptoethanol and deionized water are mixed, stir with magnetic stirrer, be mixed with question response liquid; Indium acetate in molar ratio wherein: the acetic acid europium: mercaptoethanol is 1: 0.01～0.04: 1～1.5, and the concentration of question response liquid is counted 2mmol/L with the indium acetate molar weight;
Next carries out liquid phase electroless plating reaction: the question response liquid configured is poured in reaction chamber, and enclosed reaction chamber passes into N by the air inlet duct in reaction chamber
2gas, with the oxygen in emptying reaction chamber, then pass into H by the air inlet duct
2s gas, realize the gas-liquid surface reaction; H wherein
2the ratio of the molar weight of the indium acetate in the total amount of S gas and question response liquid is 3～20: 1; Along with H
2s constantly is filled with reaction chamber, obtains deposit solution;
Gained deposit solution after last abstraction reaction: with deionized water and ethanol, deposit solution is carried out to eccentric cleaning respectively, the indium trisulfide rare magnetic semiconductor nano material of mixing europium obtained is saved as to solid or liquid.
In order to make the further growth of gained sample, gained deposit solution after reaction, can be used microwave heating 15～40min that power is 800～1000 watts, makes to mix the indium trisulfide nano particle further growth of europium, then carry out eccentric cleaning.
In chemical reaction of the present invention, make the indium trisulfide nano particle of mixing europium not adding under any temperature condition to react; Also can control temperature of reaction at the additional circulator bath of reaction chamber and be stabilized in 25～30 ℃.Controlling temperature of reaction at the reaction chamber circulator bath is that more equilibrium temperature is more stable in order to make to react ambient conditions, makes the controllability of reaction higher.
Reactant H in the embodiment of the present invention
2s gas, for prepared in test, adopt hydrochloric acid soln to splash into sodium sulfide solution and produces H
2s gas; Its preparation amount standard is as mentioned above: H
2in in the total amount of S gas and question response liquid
3+the ratio of molar weight be 3～20: 1, H
2the total amount of S gas can calculate by the consumption of hydrochloric acid soln and sodium sulfide solution.H
2the speed of producing of S gas is splashed into the speed control of sodium sulfide solution by hydrochloric acid soln, the speed that hydrochloric acid soln splashes into sodium sulfide solution can be 10～20 of per minutes; The too fast per minute of drippage is more than 20 or cross slow per minute and make sample deposition too fast or excessively slow lower than 10 meetings, and then magnetic is died down; It is suitable being controlled at 15 of per minutes.H
2s gas also can be purchased in market, can be H
2s gas can be also containing N
2h
2s gas.
The method of patent of the present invention is different from the method for background technology, adopts the method for liquid phase electroless plating, by gas, brings sulphur source H into
2s.Can be by controlling reactant gases (sulphur source) H in laboratory
2the flow velocity of S is controlled the deposition speed of the indium trisulfide of mixing europium, so that it has large saturation magnetization.
The present invention is in the end in collecting reaction product, and the cleaning of mentioning is deionized water eccentric cleaning 2～3 times, then uses the dehydrated alcohol eccentric cleaning 2～3 times.
Saving as solid or liquid described in the present invention, is the indium trisulfide rare magnetic semiconductor nano material of mixing europium cleaned up to be put into to baking oven under 50～70 ℃, dry 12～24 hours; Or add again dehydrated alcohol in the indium trisulfide rare magnetic semiconductor nano material of mixing europium cleaned up.For example, solid conservation can be put into the sample cleaned up in baking oven and dries 20 hours under 60 degrees centigrade; In the laboratory fluids preservation, only the sample cleaned up directly need to be put into to centrifuge tube splashes into 3～5 dehydrated alcohols again.
In the present invention in question response liquid mercaptoethanol be as tensio-active agent, at the surface orientation of solution, arrange, significantly reduce the surface tension of solution, consumption is as mentioned above.
Effect of the present invention and characteristics:
1) the present invention prepares the indium trisulfide dilute magnetic semiconductor material of mixing europium had than high saturation and magnetic intensity by the method for liquid phase electroless plating under room temperature.After europium ion mixes, europium ion partly substitutes indium ion, has changed In
2s
3the structure of material, added spin, and the physical message of having enriched material makes it become the potential rare magnetic semiconductor nano material of a kind of tool, and potential application is arranged aspect spin electric device.
2) the simple easy handling of experimental technique of the present invention, experiment condition is content with very little, reproducible, is convenient to large-scale production.
3) In that prepared by the present invention
2s
3eu
3+the saturation magnetization of dilute magnetic semiconductor material is along with its saturation magnetization of difference of europium doping content is also different.Produce reactant gases H in laboratory by control
2the dropleting speed of the hydrochloric acid soln of S is controlled the deposition speed of the indium trisulfide of mixing europium, makes it have larger saturation magnetization, In
2s
3eu
3+the diluted magnetic semiconductor nano particle than high saturation and magnetic intensity for research dilute magnetic semiconductor there is important value.
The accompanying drawing explanation
Fig. 1 is the preparation In of use for laboratory of the present invention
2s
3eu
3+the experimental installation sketch.
Fig. 2 is In prepared by different ratios of raw materials by the present invention
2s
3eu
3+the XRD figure spectrum of diluted magnetic semiconductor nano particle.
Fig. 3 is the In that embodiment 4 makes
2s
3eu
3+the shape appearance figure of diluted magnetic semiconductor nano particle.
Fig. 4 is the In that embodiment 4 makes
2s
3eu
3+the transmission electron microscope of diluted magnetic semiconductor nano particle and the collection of illustrative plates of XRD.
Fig. 5 is In prepared by different ratios of raw materials by the present invention
2s
3eu
3+the M-H figure of dilute magnetic semiconductor material.
Fig. 6 is proportioning raw materials while being 3%, and the hydrochloric acid soln dropleting speed is 10 of per minutes, 15, and the magnetic test pattern of sample in the time of 20.
Embodiment
The present invention has adopted a kind of simple device when preparing rare magnetic semiconductor nano material, as shown in Figure 1.
In Fig. 1, upper part device is to produce reactant gases H
2the device of S; Lower part is the reaction chamber that the main body reaction occurs, and reaction chamber is a double-deck ball-type bottle with external circulator bath, and circulator bath is controlled the temperature of reaction in reaction chamber, make temperature of reaction stable, pour the reaction solution configured into reaction chamber, enclosed reaction chamber, do not passing into H
2first pass into nitrogen before S gas with the oxygen of sneaking in emptying reaction chamber the resistance to air loss of inspection units, then start hydrochloric acid soln is splashed in sodium sulphite by drop-burette, sluggish starts at the surface of question response liquid, H
2the abundant contact reacts of S gas and liquid level generates In
2s
3eu
3+nano particle.
Utilize upper part of experimental installation to prepare H
2s gas, this experiment is to be reacted and produce with hydrochloric acid soln by sodium sulfide solution, solution is all to be configured by deionized water.The sodium sulfide solution that extraction configures, inject Erlenmeyer flask, then extract the hydrochloric acid soln configured it is dropped in sodium sulfide solution, with preparation H
2s gas, control the hydrochloric acid dropleting speed, slowly produces hydrogen sulfide, then pass through to regulate the flow velocity of nitrogen by H
2the S gas slowly is brought reaction unit uniformly into.The adjusting of nitrogen flow rate, by the bubble in the Erlenmeyer flask of control linkage gas, makes its flow velocity at 2～3/S bubble; The H that hydrochloric acid and sodium sulphite reaction are produced
2in the total amount of S gas and reaction solution, the ratio of the molar weight of indium ion is 20: 1, H
2the speed of producing of S gas is splashed into the speed control of sodium sulfide solution by hydrochloric acid soln, drip 15 of the preferred per minutes of speed.H used in following examples
2s gas all prepares and brings in reaction chamber by method as above.At preparation In
2s
3eu
3+the time, relative In
2s
3the H used
2s gas is excessive.
Embodiment 2In
2s
3eu
3+the preparation of diluted magnetic semiconductor nano particle (1)
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 10ml, mercaptoethanol solution 5ml, deionized water 75ml injects beaker, and beaker is placed on magnetic stirrer and stirs 20min, and solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit; Open the nitrogen pressure valve, produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 15 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction can continue one hour.
After the reaction end, deposit solution after the collection reaction, pour in Erlenmeyer flask and put into power 900W microwave-oven-heating 30min, then reaction product cleaned, and is respectively washed with de-ionized water and cleans 2～3 times with dehydrated alcohol for 2～3 times.It is solid or liquid that the rear sample of cleaning can be preserved sample by actual demand.
According to the power spectrum test, last In
2s
3eu
3+in the diluted magnetic semiconductor nano granular product, the molar content of europium is 0.7749%.
The In made
2s
3eu
3+the XRD figure of diluted magnetic semiconductor nano particle spectrum is shown in Fig. 2, and the M-H curve is shown in Fig. 5, the molar weight that the proportioning raw materials in Fig. 2 and Fig. 5 1% means europium ion in question response liquid and the ratio of the molar weight of indium ion 1: 100.
Embodiment 3In
2s
3eu
3+the preparation of diluted magnetic semiconductor nano particle (2)
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 20ml, mercaptoethanol solution 5ml, deionized water 65ml injects beaker, and beaker is placed on to magnetic stirrer stirring 20min, and solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit, open the nitrogen pressure valve and produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 15 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction can continue one hour.
Collect deposit solution after reaction finishes, pour in Erlenmeyer flask and put into power 900W microwave-oven-heating 30min, then reaction product is cleaned, be respectively washed with de-ionized water and clean 2～3 times with dehydrated alcohol for 2～3 times.It is solid or liquid that the rear sample of cleaning can be preserved sample.
According to the power spectrum test, last In
2s
3eu
3+in the diluted magnetic semiconductor nano granular product, the molar content of europium is 0.8374%.
The In made
2s
3eu
3+the XRD figure spectrum of diluted magnetic semiconductor nano particle is shown in Fig. 2, and the M-H curve is shown in Fig. 5, and the proportioning raw materials in Fig. 2 and Fig. 5 2% means that the molar weight of europium ion in reaction solution and the ratio of the molar weight of indium ion are 2: 100.
Embodiment 4In
2s
3eu
3+the preparation of diluted magnetic semiconductor nano particle (3)
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 30ml, mercaptoethanol solution 5ml, deionized water 55ml injects beaker, and beaker is placed on to magnetic stirrer stirring 20min, and solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit, open the nitrogen pressure valve and produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 15 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction can continue one hour.
Collect deposit solution after reaction finishes, pour in Erlenmeyer flask and put into 900W microwave-oven-heating 30min, then reaction product is cleaned, be respectively washed with de-ionized water and clean 2～3 times with dehydrated alcohol for 2～3 times.After cleaning, sample can save as solid or liquid on request.
According to the power spectrum test, last In
2s
3eu
3+in the diluted magnetic semiconductor nano granular product, the molar content of europium is 1.161%.
The In made
2s
3eu
3+the XRD figure spectrum of diluted magnetic semiconductor nano particle is shown in Fig. 2, and the M-H curve is shown in Fig. 5, and the proportioning raw materials in Fig. 2 and Fig. 5 3% means that the molar weight of europium ion in reaction solution and the ratio of the molar weight of indium ion are 3: 100.
Embodiment 5In
2s
3eu
3+the preparation of diluted magnetic semiconductor nano particle (4)
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 40ml, mercaptoethanol solution 5ml, deionized water 45ml injects beaker, and beaker is placed on to magnetic stirrer stirring 20min, and solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit, open the nitrogen pressure valve and produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 15 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction can continue one hour.
After the reaction end, solution after the collection reaction, pour in Erlenmeyer flask and put into microwave heating 30min, then reactant cleaned, and is respectively washed with de-ionized water and cleans 2～3 times with dehydrated alcohol for 2～3 times.It is solid or liquid that the rear sample of cleaning can be preserved sample by test request.
According to the power spectrum test, in last In2S3Eu3+ diluted magnetic semiconductor nano granular product, the molar content of europium is 1.215%.The XRD figure spectrum of the In2S3Eu3+ diluted magnetic semiconductor nano particle made is shown in Fig. 2, and the M-H curve is shown in Fig. 5, and the proportioning raw materials in Fig. 2 and Fig. 5 4% means that the molar weight of europium ion in reaction solution and the ratio of the molar weight of indium ion are 4: 100.
The preparation (5) of embodiment 6In2S3Eu3+ diluted magnetic semiconductor nano particle
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 30ml, mercaptoethanol solution 5ml, deionized water 55ml injects beaker, and beaker is placed on to magnetic stirrer stirring 20min, and solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit, open the nitrogen pressure valve and produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 10 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction continues one hour.
Collect deposit solution after reaction finishes, pour in Erlenmeyer flask and put into power 900W microwave-oven-heating 30min, then product is cleaned, be respectively washed with de-ionized water and clean 2～3 times with dehydrated alcohol for 2～3 times.Can preserve on request sample after cleaning is solid or liquid.
In question response liquid, europium ion is 3: 100 with the ratio of the molar mass of indium ion, and with molar mass in embodiment 4, than identical, the dropleting speed of hydrochloric acid soln is crossed slowly as 10 of per minutes, causes the saturation magnetization of sample to compare and die down with embodiment 4.Details are referring to Fig. 6, and initial point type curve representation hydrochloric acid dropleting speed is 10 of per minutes, and star-like curve representation hydrochloric acid soln dropleting speed is 15 of per minutes, can find out that hydrochloric acid dripped slowly (relative 15) and causes sample magnetic to die down.
Embodiment 7In
2s
3eu
3+the preparation of diluted magnetic semiconductor nano particle (6)
At first configure question response liquid: the solution that is 20mmol/L by the ionic concn of indium acetate and deionized water configuration indium; The solution that is 0.2mmol/L by the ion solubility of acetic acid europium and deionized water configuration europium; The solution that is 40mmol/L with mercaptoethanol and deionized water configuration concentration; Extract indium ion solution 10ml, europium ion solution 30ml, mercaptoethanol solution 5ml, deionized water 55ml injects beaker, and beaker is placed on to magnetic stirrer stirring 20min, and reaction solution is evenly mixed, and configures question response liquid.Open circulator bath and mix up 25 ℃ of control temperature, question response liquid is injected to reaction chamber, seal whole reaction unit, open the nitrogen pressure valve and produce hydrogen sulfide, the dropleting speed that makes hydrochloric acid soln is 20 of per minutes; H under the carrying of nitrogen
2the S gas slowly flows in reaction chamber, and gas fully contacts the gas-liquid surface reaction occurs with the reaction liquid level, and reaction continues one hour.After the reaction end, solution after the collection reaction, pour in Erlenmeyer flask and put into microwave heating 30min, then reactant cleaned, and is respectively washed with de-ionized water and cleans 2～3 times with dehydrated alcohol for 2～3 times.After cleaning, sample can save as solid or liquid on request.
In reaction, europium ion is 3: 100 with the ratio of the molar mass of indium ion, with molar mass in embodiment 4 than identical, the dropleting speed of hydrochloric acid soln too fast (relative 15) is 20 of per minutes, causes the saturation magnetization of sample to compare and die down with embodiment 4.Details are referring to Fig. 6, and diamond type curve representation hydrochloric acid dropleting speed is 20 of per minutes, and star-like curve representation hydrochloric acid soln dropleting speed is 15 of per minutes, can find out that the too fast sample magnetic that causes of hydrochloric acid drippage dies down.
Claims (3)
1. a preparation method who mixes the indium trisulfide rare magnetic semiconductor nano material of europium carries out in the reaction chamber of sealing, and air inlet duct and vent are arranged on reaction chamber;
At first prepare question response liquid: indium acetate, acetic acid europium, mercaptoethanol and deionized water are mixed, stir with magnetic stirrer, be mixed with question response liquid; Indium acetate in molar ratio wherein: the acetic acid europium: mercaptoethanol is 1: 0.01～0.04: 1～1.5, and the concentration of question response liquid is counted 2mmol/L with the indium acetate molar weight;
Next carries out liquid phase electroless plating reaction: the question response liquid prepared is poured in reaction chamber, and enclosed reaction chamber, control temperature of reaction at the additional circulator bath of reaction chamber and be stabilized in 25～30 ℃; Pass into N by the air inlet duct in reaction chamber
2gas, with the oxygen in emptying reaction chamber, then pass into H by the air inlet duct
2s gas, realize the gas-liquid surface reaction; H wherein
2the ratio of the molar weight of the indium acetate in the total amount of S gas and question response liquid is 3～20: 1; Along with H
2s constantly is filled with reaction chamber, obtains deposit solution;
Gained deposit solution after last abstraction reaction: with deionized water and ethanol, deposit solution is carried out to eccentric cleaning respectively, the indium trisulfide rare magnetic semiconductor nano material of mixing europium obtained is saved as to solid or liquid.
2. the preparation method who mixes the indium trisulfide rare magnetic semiconductor nano material of europium according to claim 1, it is characterized in that, gained deposit solution after reaction, use microwave heating 15～40min that power is 800～1000 watts, make the indium trisulfide nano particle further growth of mixing europium carry out again eccentric cleaning.
3. the preparation method who mixes the indium trisulfide rare magnetic semiconductor nano material of europium according to claim 1 and 2, it is characterized in that, described solid or the liquid of saving as is the indium trisulfide rare magnetic semiconductor nano material of mixing europium cleaned up to be put into to baking oven under 50～70 ℃, dry 12～24 hours; Or add again dehydrated alcohol in the indium trisulfide rare magnetic semiconductor nano material of mixing europium cleaned up.
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| CN103265063B (en) * | 2013-05-31 | 2014-07-09 | 吉林大学 | Method for preparing Y-doped Ag2S diluted magnetic semiconductor nanoparticles |
| CN109943338B (en) * | 2019-03-18 | 2021-12-28 | 中国计量大学 | Preparation method of near-infrared luminescent rare earth doped indium selenide nanosheet |
| CN110422874B (en) * | 2019-07-31 | 2021-12-28 | 上海电机学院 | Indium sulfide-based impurity band semiconductor and preparation method and application thereof |
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|---|---|---|---|---|
| CN101037223A (en) * | 2007-04-12 | 2007-09-19 | 上海交通大学 | Preparation process of indium trisulfide nano belt |
| CN101941738A (en) * | 2010-08-05 | 2011-01-12 | 吉林大学 | Method for preparing Cd1-xCoxS dilute magnetic semiconductor nanoparticles by gas-liquid surface reaction |
| US20110104876A1 (en) * | 2008-04-01 | 2011-05-05 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Atmospheric pressure chemical vapor deposition method for producing a n-semiconductive metal sulfide thin layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101037223A (en) * | 2007-04-12 | 2007-09-19 | 上海交通大学 | Preparation process of indium trisulfide nano belt |
| US20110104876A1 (en) * | 2008-04-01 | 2011-05-05 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Atmospheric pressure chemical vapor deposition method for producing a n-semiconductive metal sulfide thin layer |
| CN101941738A (en) * | 2010-08-05 | 2011-01-12 | 吉林大学 | Method for preparing Cd1-xCoxS dilute magnetic semiconductor nanoparticles by gas-liquid surface reaction |
Non-Patent Citations (2)
| Title |
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| Full-Color Emission from In2S3 and In2S3:Eu3+ Nanoparticles;Wei Chen et al;《J.Phys.Chem.B》;20041231;第108卷(第32期);第11927-11934页 * |
| Wei Chen et al.Full-Color Emission from In2S3 and In2S3:Eu3+ Nanoparticles.《J.Phys.Chem.B》.2004,第108卷(第32期),第11927-11934页. |
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