CN102605429A - Method for preparing one-dimensional nanowires by tin whisker growth - Google Patents
Method for preparing one-dimensional nanowires by tin whisker growth Download PDFInfo
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- CN102605429A CN102605429A CN201210068606XA CN201210068606A CN102605429A CN 102605429 A CN102605429 A CN 102605429A CN 201210068606X A CN201210068606X A CN 201210068606XA CN 201210068606 A CN201210068606 A CN 201210068606A CN 102605429 A CN102605429 A CN 102605429A
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Abstract
The invention discloses a method for preparing one-dimensional nanowires by tin whisker growth, which includes: depositing a metal layer on a substrate and forming stripe-like nano-scale thin metal wires by photoetching process; and connecting two ends of each thin metal wire to electrodes, and energizing to promote accelerated growth of whiskers on the metal layer to obtain the one-dimensional nanowires. The diameter and length of the thin nanowires can be controlled effectively, the grown one-dimensional nanowires are even in diameter and directly grown on the substrate, and connection in three-dimensional packaging is facilitated.
Description
Technical field
The present invention relates to microelectronics manufacturing and nano material and make the field, concrete ground a kind of method of making one-dimensional nano line of saying so.
Technical background
The nano material general reference is by the molecular solid material of size nanoparticle between 0.1～100nm, comprises nanoparticle, nanofiber, nano thin-film and nanometer blocks of solid.The special construction level that nanoparticle had; Given its many special nature and function; Like surface effects, quantum size effect, small-size effect, macro quanta tunnel effect, dielectric confinement effect etc.; These special physical propertiess make nano material demonstrate many peculiar character and show some excellent performance, make it in various fields, and particularly there is great application value aspects such as optics, electricity, magnetics, biology, pottery, chemical industry, medical science, catalysis.Nano material is divided into zero dimension, one dimension, two and three dimensions nano material by yardstick.Monodimension nanometer material comprises nano wire, nanotube etc.
The at present synthetic topmost method of metal nanometer line is a template, the pattern that template can fine regulation and control final product, and be easy to obtain being orientated consistent nano material array, but its aftertreatment is more loaded down with trivial details.Also have crystal seed method in addition, synthetic metal nanometer lines such as microwave, the auxiliary reduction method of UW, laser radiation method, electrochemical deposition method and hydrothermal method, but these methods all are difficult to the diameter and the length of control nano wire.
Summary of the invention
The invention discloses a kind of long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing, can accurately control the diameter and the length of nano wire, obtain uniform nanometer fine rule.
A kind of long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing is characterized in that, may further comprise the steps:
(1) at the substrate surface depositing metal layers;
(2) utilize photoetching development and metal level etching process, form many nano level metal fine rules at substrate surface;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule;
(4) remove the surperficial zone of oxidation of metal fine;
(5) with the two ends receiving electrode energising of metal fine, promote metal fine surface growth metal whisker to obtain the one-dimensional metal nano wire.
Further; Said step (2) is specially: at first at layer on surface of metal spin coating photoresist material; Adopt the mask plate of nano level striated pattern that it is carried out photoetching then; Developing obtains many nano level photoresist material fine rules again, and the metal level beyond the substrate surface photoresist material fine rule is fallen in final etching, promptly gets the nano level metal fine rule.
Further, said step (3) is specially: at the whole surperficial spin coating photoresist material of substrate, utilize photoetching development technology to remove the photoresist material on metal fine surface.
Further, said metal level is any one among Cd, Sn, Zn, Al or the Ag.
Further, before said step (5) energising, also substrate is placed in the heating unit, utilize heating unit that substrate intensification metal level is grown after the temperature of whisker easily, again to metal fine insulation energising.
Further, said step (5) places vacuum environment with substrate when energising.
Technique effect of the present invention is embodied in: the present invention has mainly utilized the long characteristic of tin one of the main divisions of the male role in traditional opera, and photoetching control tin must size quicken the long one-dimensional metal nano wire for preparing of tin one of the main divisions of the male role in traditional opera with energising.Connect because the nano level fine rule that grows out is an one dimension, each grain size is all identical, so diameter is very even, this is that other preparation one-dimensional nano lines are beyond one's reach.Can effectively control the diameter of nano wire through photoetching process.Not only nanowire growth can be promoted through step mode, and the length of nano wire can also be effectively controlled.
Description of drawings
Fig. 1 is the synoptic diagram of naked silicon chip of the present invention;
Fig. 2 is for the present invention's deposition and electroplate the synoptic diagram that adds thick metal layers;
Fig. 3 is the synoptic diagram behind the present invention's photoetching development first time;
Fig. 4 erodes the synoptic diagram of bare metal for the present invention;
Fig. 5 is the synoptic diagram after the present invention's photoetching for the second time;
Fig. 6 is the synoptic diagram of the 1-dimention nano metal wire that obtains after the present invention energising;
Fig. 7 is surface metal fine rule of the present invention and two ends land pattern synoptic diagram.
Embodiment:
Below in conjunction with accompanying drawing the present invention is elaborated.
Tin must be a kind of monocrystalline whiskers of the spontaneous growth of stanniferous coating surface.Under differing temps, the long speed of tin one of the main divisions of the male role in traditional opera is different.Experiment shows, increases to 10 in current density
4A/cm
2The time ELECTROMIGRATION PHENOMENON will take place, near ELECTROMIGRATION PHENOMENON atom of shape anode gathers the internal compressive stress that has increased tin coating, it is long to have quickened the tin one of the main divisions of the male role in traditional opera.Experiment finds for metals such as Cd, Zn, Al, Ag this phenomenon is arranged also.Based on this discovery, the present invention attempts utilizing electromigration acceleration whisker growth to prepare one-dimensional nano line.
A kind of long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing may further comprise the steps:
(1) elder generation's deposition of thin metal level on substrate is thickeied metal level with electroplating technology, again shown in accompanying drawing (1) and (2); Substrate can adopt silicon substrate, gallium arsenide substrate or glass substrate, and metal level is any one among Cd, Sn, Zn, Al or the Ag.
(2) at layer on surface of metal spin coating thin photoresist; Utilize the mask plate of nano level striated pattern to carry out photoetching; Developing obtains many nano level photoresist material fine rules (referring to figure (3)) again, and the metal level beyond the substrate surface photoresist material fine rule is fallen in final etching, promptly gets nano level metal fine rule (referring to figure (4)); The quantity and spacing of metal fine is according to the number of nanowires decision of required preparation;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule, concrete implementation is: at the whole surperficial spin coating photoresist material of substrate (referring to figure (5)), utilize photoetching development technology to remove the photoresist material on metal fine surface, shown in accompanying drawing (6);
(4) remove the surperficial zone of oxidation of metal fine, remove the obstacles, save time, so far accomplish sample making for the growth of metal whiskers;
(5) with the two ends receiving electrode energising of metal fine, promote metal fine surface growth metal whisker to obtain the one-dimensional metal nano wire, shown in accompanying drawing (7).Consider that the fast the most required temperature of every kind of metal whisker growth is different, also substrate is placed in the heating unit before the energising, utilize heating unit that substrate intensification metal level is grown after the temperature of whisker easily, again to metal fine insulation energising.Also can when energising, be in the vacuum environment by sample, avoid burning on the one hand, can reduce the diameter of whisker on the other hand to a certain extent.The speed of growth of current density control nano wire.
Claims (6)
1. one kind is utilized the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera, it is characterized in that, may further comprise the steps:
(1) at the substrate surface depositing metal layers;
(2) utilize photoetching development and metal level etching process, form many nano level metal fine rules at substrate surface;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule;
(4) remove the surperficial zone of oxidation of metal fine;
(5) with the two ends receiving electrode energising of metal fine, promote metal fine surface growth metal whisker to obtain the one-dimensional metal nano wire.
2. the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1; It is characterized in that; Said step (2) is specially: at first at layer on surface of metal spin coating photoresist material, adopt the mask plate of nano level striated pattern that it is carried out photoetching then, developing obtains many nano level photoresist material fine rules again; The metal level beyond the substrate surface photoresist material fine rule is fallen in final etching, promptly gets the nano level metal fine rule.
3. the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 and 2 is characterized in that said step (3) is specially: at the whole surperficial spin coating photoresist material of substrate, utilize photoetching development technology to remove the photoresist material on metal fine surface.
4. the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 is characterized in that said metal level is any one among Cd, Sn, Zn, Al or the Ag.
5. the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1; It is characterized in that; Before said step (5) energising, also substrate is placed in the heating unit, utilize heating unit that substrate intensification metal level is grown after the temperature of whisker easily, again to metal fine insulation energising.
6. the long method for preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera of utilizing according to claim 1 is characterized in that said step (5) places vacuum environment with substrate when energising.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040055892A1 (en) * | 2001-11-30 | 2004-03-25 | University Of North Carolina At Chapel Hill | Deposition method for nanostructure materials |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
| CN101924202A (en) * | 2010-09-08 | 2010-12-22 | 武汉理工大学 | Single nanowire electrochemical device and assembly and in-situ characterization method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040055892A1 (en) * | 2001-11-30 | 2004-03-25 | University Of North Carolina At Chapel Hill | Deposition method for nanostructure materials |
| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
| CN101924202A (en) * | 2010-09-08 | 2010-12-22 | 武汉理工大学 | Single nanowire electrochemical device and assembly and in-situ characterization method thereof |
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